JP2003304027A - Package for housing optical semiconductor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that an optical semiconductor element is thermally broken when heat generated from the element at operating time is not dissipated efficiently to the outside. <P>SOLUTION: A package for housing the optical semiconductor element comprises: a base 1 having a placing part for placing the optical semiconductor element on an upper surface; a metal frame 2 mounted so as to surround an optical semiconductor element mounting part on the base; and a cover member 3 mounted on the frame to hermetically seal the inside of the frame. In this package, the base is formed by impregnating a base material obtained by knitting carbon fibers in a three-dimensional manner with a copper. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor element accommodating package for accommodating an optical semiconductor element is a copper-containing package having an optical semiconductor element on the center of an upper surface with an electronic cooling element interposed therebetween. A base made of a tungsten alloy or the like is bonded to the base so as to surround the optical semiconductor element mounting portion via a brazing material such as silver brazing, and iron-nickel-having a through hole and a notch on a side portion. A frame made of a metal material such as a cobalt alloy, and a metal such as an iron-nickel-cobalt alloy having a space attached to the through hole of the frame or a frame around the through hole and having an optical signal transmitted therein A tubular fixing member made of a material, and a melting point of 200 to 40 for the tubular fixing member.
A translucent member made of amorphous glass or the like for closing the inside of the fixing member attached through a low melting point brazing material such as a gold-tin alloy at 0 ° C., and inserted into the notch portion of the frame body to be oxidized. Attached to a ceramic terminal body in which each electrode of an optical semiconductor element is electrically connected to a ceramic insulator made of an aluminum sintered body through a bonding wire, and a ceramic terminal body, and to the upper surface of the frame body. And a lid member that hermetically seals the optical semiconductor element, and the optical semiconductor element is mounted and fixed on the optical semiconductor element mounting portion of the frame body with an electronic cooling element such as a Peltier element sandwiched therebetween. In addition, each electrode of the optical semiconductor element is electrically connected to the metallized wiring layer of the ceramic terminal body through a bonding wire, and then a lid member is joined to the upper surface of the frame body to form a base body, a frame body and a lid. The volume consisting of parts and An optical fiber member into the cylindrical fixing member accommodates the optical semiconductor element hermetically in the interior, for example, the optical semiconductor device as a product by attaching by laser welding such as YAG laser.

In such an optical semiconductor device, optical excitation is caused by a drive signal supplied from an external electric circuit to the optical semiconductor element while cooling the optical semiconductor element by an electronic cooling element, and the excited light is transmitted through an optical fiber through an optical fiber. It is used for high-speed communication and the like by transmitting and receiving to and from the member and transmitting in the optical fiber of the optical fiber member.

In the package for storing an optical semiconductor element described above, the base on which the optical semiconductor element is mounted is formed of a metal material such as a copper-tungsten alloy or a copper-molybdenum alloy. Since the copper-molybdenum alloy has a high thermal conductivity of about 320 W / m · K and is excellent in thermal conductivity, the base body absorbs heat generated during the operation of the optical semiconductor element well and dissipates it into the atmosphere. As a result, the optical semiconductor element is always kept at an appropriate temperature, and thermal destruction of the optical semiconductor element and thermal deterioration of the characteristics are effectively prevented.

The copper-tungsten alloy or copper-molybdenum alloy used as the substrate of the package for storing the optical semiconductor element described above is fired from tungsten powder or molybdenum powder to obtain a sintered porous body, and then the above-mentioned sintering is performed. It is made by melting in the pores of the porous body, for example,
When impregnating the sintered porous body made of tungsten with copper, the sintered porous body is filled with copper in the range of 50% by mass to 60% by mass, the copper is in the range of 40% by mass to 50% by mass. 55% by mass of sintered porous material when impregnated
To 60% by mass and copper in the range of 40% to 45% by mass.

[0006]

However, in this conventional package for accommodating an optical semiconductor element, the base body is fired of tungsten powder or molybdenum powder to obtain a sintered porous body, and the inside of the pores of the sintered porous body is obtained. It is formed by impregnating molten copper with copper, and as the amount of copper is increased, the thermal conductivity of the base increases, but the linear thermal expansion coefficient of the base also increases accordingly.
The substrate has a linear thermal expansion coefficient (10 ppm / ° C .: 10 ppm / ° C.) of a metal frame made of an iron-nickel-cobalt alloy attached to the upper surface.
(Room temperature to 800 ° C.), the stress generated due to the difference in linear thermal expansion coefficient between the two acts on the bonding interface between the two, and the stress causes strain in the metal frame body.
Misalignment of the central axis between the optical semiconductor element and the optical fiber member reduces the transmission efficiency of the optical signal, and further, the stress causes cracks in the joint interface, and in severe cases, peeling may occur at the joint interface between the two. If it occurs, the reliability of hermetic sealing of the package for storing optical semiconductor elements is impaired, and the problem that the optical semiconductor elements housed inside cannot be reliably and normally operated occurs. Therefore, the linear thermal expansion coefficient of the base body needs to be approximated to the linear thermal expansion coefficient of the metal frame body, and the copper content of the base body is 40 mass% to 50 mass% (the base body is made of a copper-tungsten alloy). When it is made of copper, the copper content is limited to 40 mass% to 50 mass%, and when it is made of a copper-molybdenum alloy, the content of copper is limited to 40 mass% to 45 mass%). Conductivity is about at most 320W / m ·
It was about K.

When a higher thermal conductivity is required, a carbon-carbon composite has been proposed in which the base is replaced by a copper-tungsten alloy and carbon fibers arranged in one direction are bonded by carbon. The carbon-carbon composite has a directional thermal conductivity, and the thermal conductivity in the carbon fiber direction is about 400 W / m · K.
It is very large and the heat generated by the optical semiconductor element can be efficiently dissipated to the outside by preparing a substrate in which the carbon fibers are aligned in the direction perpendicular to the substrate adhesion surface of the optical semiconductor element. Become. However, since the carbon-carbon composite has a direction in which the thermal conductivity increases only in the fiber direction, the recent high density and high integration in the package for housing an optical semiconductor device has greatly progressed, and a large amount has been generated during operation. When a semiconductor element that emits heat is stored, the heat generated when the semiconductor element operates is efficiently transferred from the semiconductor element to the base body, but the transfer of heat from the base body to the outside becomes a rule, and Cannot be completely dissipated, and as a result, the optical semiconductor element becomes high temperature due to the heat generated by the element itself, causing thermal damage to the optical semiconductor element or causing a variation in characteristics, which makes it impossible to operate stably. It had a drawback. Further, if the linear thermal expansion coefficient (10 ppm / ° C .: room temperature to 800 ° C.) of the metal frame made of an iron-nickel-cobalt alloy attached to the upper surface is significantly different, the linear thermal expansion coefficient of the two is different. The stress generated by the stress acts on the bonding interface between the two, and the stress causes strain in the metal frame body, resulting in a deviation of the central axis between the optical semiconductor element and the optical fiber member, which lowers the optical signal transmission efficiency. Or, further cracks at the bonding interface due to the stress, or in some cases peeling occurs at the bonding interface between the two, the reliability of the hermetic sealing of the package for optical semiconductor element storage is impaired, It has a drawback that the optical semiconductor element housed inside cannot be reliably and normally operated.

In addition, in the substrate composed of the carbon-carbon composite, when carbon fibers are bonded with carbon, voids are formed inside the substrate, and the presence of the voids does not ensure the airtightness of the substrate itself. There is also a drawback that the space for storing the optical semiconductor element of the package for storing an optical semiconductor element manufactured using the base becomes incompletely hermetically sealed, and it becomes difficult to operate the optical semiconductor element stably and normally. Was.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to accommodate an optical semiconductor element which can be driven at a high speed inside, and to store the optical semiconductor element in a normal and stable state for a long period of time. Another object of the present invention is to provide a package for accommodating an optical semiconductor device that can be operated at any time.

[0010]

SUMMARY OF THE INVENTION A package for storing an optical semiconductor element of the present invention surrounds a base having a mounting portion on which an optical semiconductor element is mounted, and an optical semiconductor element mounting portion on the base. A package for storing an optical semiconductor element, comprising a metal frame body attached in this manner, and a lid member attached on the metal frame body to hermetically seal the inside of the metal frame body, The base is characterized in that it is formed by impregnating copper into a three-dimensionally knitted base material of carbon fiber.

Also, in the package for accommodating an optical semiconductor element of the present invention, the difference in thermal expansion coefficient between the base and the metal frame is 2 pp.
It is characterized by being m / ° C. or less. Further, the optical semiconductor element accommodating package of the present invention is characterized in that the carbon fiber diameter of the substrate is 1 μm to 100 μm.

Furthermore, in the package for accommodating an optical semiconductor device of the present invention, at least one of titanium, zirconium, hafnium, and chromium is added to the base copper of 0.2 mass% to 10 mass.
It is characterized in that it is contained by mass%.

According to the package for accommodating an optical semiconductor element of the present invention, since the base body is formed of the base material in which the carbon fiber is three-dimensionally knitted, the optical semiconductor element mounted on the base body generates a large amount of heat. Also, since the carbon fiber having a high thermal conductivity of about 400 W / m · K or more is three-dimensionally arranged on the substrate, the heat is quickly spread in the optical semiconductor element mounting plane direction of the substrate and the heat is transmitted through the substrate. It is possible to efficiently and surely disperse it to the outside.

Further, according to the package for accommodating an optical semiconductor element of the present invention, the base is formed by impregnating the base material in which the carbon fiber is three-dimensionally knitted with copper, so that the base material in which the carbon fiber is three-dimensionally knitted is used. Is filled with copper, the airtightness of the substrate itself is ensured, and the airtight sealing of the space for housing the optical semiconductor element of the package for storing optical semiconductor elements manufactured using the substrate is always performed. It becomes complete, and it becomes possible to operate the optical semiconductor element stably and normally.

Further, according to the package for storing an optical semiconductor element of the present invention, the difference in the coefficient of thermal expansion between the base body and the metal frame is 2 ppm / ° C. or less. Even if the element emits heat and the heat acts on both, since a large internal stress due to the difference in the coefficient of thermal expansion does not occur between the two, almost no distortion of the metal frame occurs, As a result, the center axis of the optical semiconductor element and the optical fiber member is not displaced, the optical signal transmission efficiency is maintained, and the optical semiconductor element housing package is hermetically sealed and housed inside. The optical semiconductor element can be operated normally with high reliability.

Further, according to the optical semiconductor device accommodating package of the present invention, the carbon fiber diameter of the substrate is 1 μm to 1 μm.
Since it is set to 00 μm, the heat transmitted through the carbon fiber is ensured, and the heat generated during the operation of the optical semiconductor element is well absorbed and is well dissipated in the atmosphere, and the optical semiconductor element is always kept at an appropriate temperature. It is possible to effectively prevent the semiconductor element from being thermally destroyed or being thermally deteriorated.

Furthermore, according to the optical semiconductor device accommodating package of the present invention, since the copper of the previous base body contains at least one of titanium, zirconium, hafnium and chromium in an amount of 0.2% by mass to 10% by mass, When copper is impregnated into the base material in which the carbon fiber is three-dimensionally woven, the wettability between the base material carbon fiber and copper is improved, and the filling of the base material in which the carbon fiber is three-dimensionally woven is more robust. In addition, the airtightness of the base itself is made more reliable, and the airtight sealing of the cavity for housing the semiconductor element of the package for optical semiconductor element storage manufactured using the base is always perfect, and The semiconductor element can be operated stably and normally.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. 1 and 2 show an embodiment of a package for storing an optical semiconductor element of the present invention, in which 1 is a base, 2 is a metal frame, and 3 is a lid member. The base body 1, the metal frame body 2 and the lid member 3 constitute a container 5 for housing the optical semiconductor element 4 therein.

The substrate 1 has a mounting portion 1a on which the semiconductor element 4 is mounted, and the optical semiconductor element 4 is attached to the mounting portion 1a.

The substrate 1 acts as a supporting member for supporting the optical semiconductor element 4, and at the same time, absorbs heat generated by the optical semiconductor element 4 during operation, and efficiently dissipates the heat into the atmosphere to keep the optical semiconductor element 4 at all times. It has the effect of keeping it at an appropriate temperature.

The base 1 is made of a base material obtained by weaving carbon fibers in a three-dimensional direction and copper. For example, a method in which pitch-based carbon fibers are three-dimensionally woven using the method disclosed in Japanese Patent Laid-Open No. 5-106139 is a solid. After impregnating a solution of a thermosetting resin such as a phenolic resin in which a powder such as pitch or coke is dispersed, this is dried, and a predetermined pressure is applied and heated, in an inert atmosphere, 2000 ° C
By firing at a high temperature of up to 3000 ° C., a base material in which carbon fibers are three-dimensionally knitted is produced. Next, the copper melted in the base material obtained by three-dimensionally knitting the carbon fibers is mixed with, for example, 100
The substrate 1 is manufactured by impregnation at 0 ° C. to 1200 ° C. and a temperature / pressure of 30 MPa to 200 MPa.

When the base material in which the carbon fibers are three-dimensionally knitted is manufactured, a thermosetting material such as phenol resin in which powders such as solid pitch or coke are dispersed is obtained by weaving the carbon fibers in three dimensions. When the base material is manufactured by firing after impregnating it in a solution of resin, compared with the case where the base material is manufactured by directly firing a three-dimensionally knitted carbon fiber, the solid pitch, coke, etc. Since the powder enters between the carbon fibers to make the bond between the carbon fibers more reliable, the voids in the base material after firing can be greatly reduced, and the base material can have high thermal conductivity. .

Further, it is desirable that the powder of the solid pitch or coke has a diameter in the range of 1 μm to 200 μm. When the diameter of the powder such as the solid pitch or coke is less than 1 μm, the powder agglomerates and cannot evenly enter between the carbon fibers, so that the bond between the carbon fibers cannot be ensured and the mother after firing is not formed. If the diameter exceeds 200 μm, the powder of solid pitch, coke, etc. becomes larger than the voids between the carbon fibers and cannot enter into the voids reliably, and the carbon fibers between Since the bond cannot be ensured and the strength of the base material after firing may decrease, the diameter thereof is preferably in the range of 1 μm to 200 μm.

Further, the addition amount of the powder such as solid pitch and coke is preferably in the range of 15% by mass to 50% by mass with respect to the calcined base material. When the addition amount of the powder such as solid pitch or coke is less than 15% by mass with respect to the base material after firing, the amount of the powder is too small to ensure the bonding between the carbon fibers, and the inside of the base material after firing There is a possibility that the heat conductivity of the base material cannot be made high and the amount of addition is 50% by mass relative to the base material after firing.
When it exceeds, the amount of carbon fibers having high thermal conductivity decreases, and when the optical semiconductor element 4 mounted on the base 1 emits a large amount of heat, the heat is mounted on the optical semiconductor element 4 of the base 1. It is not possible to spread it in the plane direction quickly, and as a result,
Since it may be difficult to efficiently and surely diffuse it to the outside through the substrate 1, the addition amount thereof is preferably in the range of 15% by mass to 50% by mass with respect to the base material after firing. It

It is important that the substrate 1 is formed by impregnating a three-dimensionally knitted base material with copper. Since the base material in which the carbon fiber is three-dimensionally knitted is impregnated with copper, the voids existing in the base material are filled with copper, and the airtightness of the base body 1 itself is ensured. The space in which the optical semiconductor element 4 of the container 5 to be manufactured is housed is completely sealed, and the optical semiconductor element 4 can be stably and normally operated.

Since the amount of copper impregnated in the base 1 is consistent with the coefficient of thermal expansion of the metal frame 2, the difference in coefficient of thermal expansion between the base 1 and the metal frame 2 should be 2 ppm / ° C. or less. The thermal expansion coefficient difference between the base 1 and the metal frame 2 is 2 pp.
When the temperature exceeds m / ° C., the optical semiconductor element 4 housed in the container 5 emits heat, and when the heat acts on both, the intrinsic stress generated between them due to the difference in thermal expansion coefficient between them is large. Then, the metal frame 2 is distorted by the intrinsic stress, and as a result, the center axis of the optical semiconductor element 4 and the optical fiber member 8 is deviated to reduce the transmission efficiency of the optical signal. Cracks or fractures occur at the joints, and the container 5
The thermal expansion coefficient of the two is 2 p because there is a risk that the optical semiconductor element 4 housed inside will not be operated properly and reliably due to incomplete hermetic sealing.
It is good to set it as pm / ° C. or less.

The difference in the coefficient of thermal expansion between the substrate 1 and the metal frame 2 is set to 2 ppm / ° C. or less by appropriately adjusting the amount of copper impregnated into the base material of the substrate 1.

Further, the carbon fiber of the substrate 1 has a diameter of 1 μm.
If it is m to 100 μm, the heat transfer through the carbon fiber is more reliable, and the heat generated during the operation of the semiconductor element is well absorbed and is well dissipated in the atmosphere,
It is possible to more effectively prevent the risk of thermal destruction of the optical semiconductor element 4 and thermal deterioration of the characteristics by keeping the optical semiconductor element 4 at an appropriate temperature.

The diameter of the carbon fiber of the substrate 1 is 1 μm.
When it is less than 100%, the strength of the carbon fiber is weak and the carbon fiber is liable to be broken when woven into a three-dimensional structure, and as a result, the carbon fiber may not be woven into a good three-dimensional structure, and the diameter thereof is 100 μm or more. Therefore, when the carbon fiber is knitted in three dimensions, the carbon fiber is less likely to bend, and as a result, it may be difficult to weave the carbon fiber into a three-dimensional structure. Therefore, the diameter of the carbon fiber is 1 μm to 100 μm.
The range of is preferably used.

Furthermore, at least one of titanium, zirconium, hafnium, and chromium contained in the copper of the substrate 1 formed by impregnating a three-dimensionally knitted base material with copper is 0.2 with respect to the amount of copper. When contained in an amount of 10% by mass to 10% by mass, titanium, zirconium, hafnium, chromium, etc. improve the activity of copper when the base material produced by three-dimensionally knitting carbon fibers is impregnated with copper and the substrate 1 is manufactured. The wettability between the carbon fiber and the copper is improved, and the adhesion of the copper filled in the base material obtained by three-dimensionally knitting the carbon fiber to the carbon fiber is made firmer and more reliable, and the airtightness of the substrate 1 itself is improved. Since it becomes more reliable, the airtight sealing of the space for housing the container 5 manufactured by using the base 1 becomes more complete, and the optical semiconductor element 4 can be operated stably and normally.

At least one of titanium, zirconium, hafnium and chromium contained in the copper of the substrate 1 is used.
When the amount of the seeds is less than 0.2% by mass relative to copper, the wettability between the carbon fibers of the matrix, which is a three-dimensionally knitted carbon fiber, and the copper cannot be sufficiently activated, and the airtightness of the substrate 1 itself is lost. May decrease, and if the amount exceeds 10% by mass relative to copper, titanium, zirconium, hafnium, chromium, etc., which have low thermal conductivity, are present in the copper in large amounts, and the thermal conductivity of copper decreases, resulting in light Heat generated from the semiconductor element 4 is applied to the substrate 1
Therefore, the amount of at least one of titanium, zirconium, hafnium, and chromium contained in the copper of the substrate 1 is 0.2 to copper.
The range of 10% by mass to 10% by mass is more preferably used.

The metal frame 2 is provided on the outer peripheral portion of the upper surface of the base 1 so as to surround the mounting portion 1a on which the optical semiconductor element 4 provided on the upper surface of the base 1 is mounted. Attached via an adhesive such as
A space for accommodating the optical semiconductor element 4 is formed therein.

The metal frame 2 attached to the base 1 is made of iron-
It is made of a metal material such as a nickel-cobalt alloy or an iron-nickel alloy, and is formed, for example, by forming an ingot (lump) of an iron-nickel-cobalt alloy into a frame shape by pressing, and is attached to the base body 1. This is performed by brazing the upper surface of the base body 1 and the lower surface of the metal frame body 2 with a silver brazing material.

The metal frame 2 has a thermal expansion coefficient of about 10 p.
In the case of an iron-nickel-cobalt alloy having a pm / ° C. (room temperature to 800 ° C.), the amount of copper impregnated into the base 1 is 5
When the amount is in the range of 5% by mass to 90% by mass, the difference in thermal expansion between the metal frame 2 made of an iron-nickel-cobalt alloy and the substrate 1 can be 2 ppm / ° C.

When the metal frame 2 is made of an iron-nickel-cobalt alloy, the amount of copper impregnated in the base 1 is 55% by mass.
When it is less than 1, the coefficient of thermal expansion of the substrate 1 is lower than 8 ppm / ° C, and the difference in coefficient of thermal expansion from the metal frame body 2 made of an iron-nickel-cobalt alloy is larger than 2 ppm / ° C. Is more than 90% by mass, the coefficient of thermal expansion of the substrate 1 exceeds 12 ppm / ° C. and the difference in coefficient of thermal expansion from the metal frame body 2 made of an iron-nickel-cobalt alloy is 2
Since it is higher than ppm / ° C, the metal frame 2 is made of iron-
When the nickel-cobalt alloy is used, the amount of copper impregnated into the substrate 1 is preferably in the range of 55% by mass to 90% by mass.

The metal frame 2 has a coefficient of thermal expansion of about 1.
When it is composed of an iron-nickel alloy having a concentration of 2 ppm / ° C. (room temperature to 800 ° C.), if the amount of copper impregnated into the substrate 1 is in the range of 65% by mass to 92% by mass, a metal frame composed of the iron-nickel alloy. 2 and the base 1 have a thermal expansion difference of 2 ppm / ° C.
Can be

When the metal frame 2 is made of an iron-nickel alloy and the amount of copper impregnated in the substrate 1 is less than 65% by mass, the coefficient of thermal expansion of the substrate 1 is 10 ppm / ° C. or less, and the iron-nickel is Since the difference in the coefficient of thermal expansion from the alloy is greater than 2 ppm / ° C., and when the impregnated amount exceeds 92 mass%, the coefficient of thermal expansion of the substrate 1 becomes 14 ppm / ° C. or more, and the difference with the iron-nickel alloy. Since the difference in coefficient of thermal expansion is greater than 2 ppm / ° C., when the metal frame body 2 is made of an iron-nickel alloy, the impregnated amount of copper into the base body 1 is 65% by mass.
The range of from 92 to 92% by mass is preferably used.

The through hole 2a formed in the side portion of the metal frame body 2 acts as an attachment hole for attaching the fixing member 6 to the frame body 2, and the side portion of the metal frame body 2 is conventionally known. It is formed into a predetermined shape by performing a drilling process.

The fixing member 6 attached to the through hole 2a of the metal frame body 2 acts as a base fixing member when fixing the optical fiber member 8 to the metal frame body 2 and the light excited by the optical semiconductor element 4 is excited. Is transmitted to the optical fiber member 8. The transparent member 7 is attached to one end on the inner side of the optical fiber member 8 and the optical fiber member 8 is attached to one end on the outer side thereof.

The tubular fixing member 6 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy,
For example, it is formed by pressing an ingot (lump) of iron-nickel-cobalt alloy or the like into a cylindrical shape by pressing.

Further, the fixing member 6 has one end on the inner side thereof,
For example, a translucent member 7 is attached, and the translucent member 7 closes the internal space of the fixing member 6, and the base 1 and the metal frame 2
An optical semiconductor element 4 which holds an airtight seal of a container 5 consisting of a cover member 3 and a lid member 3 and transmits the internal space of the fixing member 6.
The excited light is transmitted as it is to the optical fiber member 8 attached to the fixing member 6.

The translucent member 7 is formed of, for example, a lead-based glass containing silicon oxide or lead oxide as a main component and a borosilicate-based amorphous glass containing boric acid or silica sand as a main component. Since crystalline glass does not have a crystal axis, when the light excited by the optical semiconductor element 4 is transmitted to and received from the optical fiber member 8 through the transparent member 7, the light excited by the optical semiconductor element 4 is transmitted by the transparent member. No birefringence occurs in 7 and the light is transmitted and received as it is to the optical fiber member 8. As a result, the optical fiber member 8 for the light excited by the optical semiconductor element 4 is transmitted.
The efficiency of transmission and reception to and from the device can be increased, and the transmission efficiency of optical signals can be increased.

The translucent member 7 is attached to the fixing member 6 by, for example, depositing a metal layer on the outer peripheral portion of the translucent member 7 in advance, and attaching the metal layer and the fixing member 6 to each other. Is brazed through a brazing material such as a gold-tin alloy.

Further, the metal frame 2 has a notch 2 on its side.
b is formed, and the ceramic terminal body 9 is inserted into the cutout portion 2b.

The ceramic terminal body 9 comprises a ceramic insulator 10 made of an electrically insulating material and a plurality of wiring layers 11. The wiring layer 11 is electrically insulated from the metal frame body 2 from the inside of the metal frame body 2. The metal layer is applied to the outside, and a metal layer is pre-deposited on the side surface of the ceramic insulator 10, and the metal layer is attached to the inner wall surface of the cutout portion 2b of the metal frame body 2 through a brazing material such as silver solder. By being attached, it is inserted into the cutout portion 2b of the metal frame body 2.

The ceramic insulator 10 of the ceramic terminal body 9 is made of an aluminum oxide sintered body or a glass ceramic sintered body. For example, when it is made of an aluminum oxide sintered body, aluminum oxide, silicon oxide, magnesium oxide. , A suitable organic binder, a plasticizer, and a solvent are added to a raw material powder such as calcium oxide to form a slurry, and the slurry is made into a ceramic green sheet by employing a conventionally known doctor blade method or calender roll method ( Ceramic green sheet) is formed, and then the ceramic green sheet is appropriately punched to form a predetermined shape and, if necessary, a plurality of sheets are laminated to form a molded body. It is manufactured by firing at a temperature.

A plurality of wiring layers 11 extending from the inside to the outside of the metal frame body 2 are provided on the ceramic terminal body 9.
Are embedded in the wiring layer 11, and each electrode of the optical semiconductor element 4 is electrically connected to the region of the wiring layer 11 located inside the metal frame body 2 through the bonding wire 12. External lead terminals 13 connected to an external electric circuit are brazed and attached to a region located at the position of 1 through a brazing material such as silver brazing.

The wiring layer 11 acts as a conductive path when connecting each electrode of the optical semiconductor element 4 to an external electric circuit, and is made of a metal such as tungsten, molybdenum, manganese, copper or silver.

For the wiring layer 11, a metal paste obtained by adding and mixing an appropriate organic binder, a solvent, etc. to a metal powder of tungsten, molybdenum, manganese, copper, silver or the like is used as a ceramic green sheet for the ceramic insulator 10. The ceramic insulator 10 is formed by printing and applying a predetermined pattern in advance by using a conventionally known printing method such as a screen printing method.

It is to be noted that the wiring layer 11 is formed by depositing a metal such as nickel or gold, which has excellent corrosion resistance and wettability with a brazing material, to a thickness of 1 to 20 μm by a plating method. The oxidative corrosion of the wiring layer 11 can be effectively prevented and the brazing of the external lead terminal 13 to the wiring layer 11 can be strengthened. Therefore, it is preferable that the exposed surface of the wiring layer 11 is coated with a metal such as nickel and gold having excellent corrosion resistance and wettability with the brazing material in a thickness of 1 μm to 20 μm.

Also, the external lead terminal 1 is formed on the wiring layer 11.
3 is brazed and attached via a brazing material such as silver brazing, and the external lead terminals 13 serve to electrically connect the respective electrodes of the optical semiconductor element 4 housed inside the container 5 to an external electric circuit. None, the optical semiconductor element 4 housed inside the container 5 by connecting the external lead terminal 13 to the external electric circuit is electrically connected to the external electric circuit via the wiring layer 11 and the external lead terminal 13. Become.

The external lead terminal 13 is made of iron-nickel-
Applying a well-known metal processing method such as a rolling method or a punching method to an ingot (lump) made of a metal material such as a cobalt alloy or an iron-nickel alloy, for example, a metal such as an iron-nickel-cobalt alloy. Is formed into a predetermined shape.

Further, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame body 2, whereby the base body 1 is formed.
Thus, the optical semiconductor element 4 is hermetically sealed inside the container 5 including the frame body 2 and the lid member 3.

The lid member 3 is joined to the upper surface of the frame body 2 by welding such as the seam weld method.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0056]

According to the package for accommodating an optical semiconductor element of the present invention, since the base body is formed of the base material in which the carbon fiber is three-dimensionally knitted, the optical semiconductor element mounted on the base body generates a large amount of heat. Even if the heat is emitted, the base has three-dimensionally arranged carbon fibers having a high thermal conductivity of about 400 W / m · K or more, so that the heat can be quickly spread in the optical semiconductor element mounting plane direction of the base and the base It is possible to efficiently and surely disperse it to the outside via the.

Further, according to the package for accommodating an optical semiconductor element of the present invention, since the base is formed by impregnating copper into a base material in which carbon fibers are three-dimensionally knitted, the base material in which carbon fibers are three-dimensionally knitted is used. Is filled with copper, the airtightness of the substrate itself is ensured, and the airtight sealing of the space for housing the optical semiconductor element of the package for storing optical semiconductor elements manufactured using the substrate is always performed. It becomes complete, and it becomes possible to operate the optical semiconductor element stably and normally.

Further, according to the package for storing an optical semiconductor element of the present invention, the difference in coefficient of thermal expansion between the base body and the metal frame is set to 2 ppm / ° C. or less. Even if the element emits heat and the heat acts on both, since a large internal stress due to the difference in the coefficient of thermal expansion does not occur between the two, almost no distortion of the metal frame occurs, As a result, the center axis of the optical semiconductor element and the optical fiber member is not displaced, the optical signal transmission efficiency is maintained, and the optical semiconductor element housing package is hermetically sealed and housed inside. The optical semiconductor element can be operated normally with high reliability.

Further, according to the optical semiconductor element accommodating package of the present invention, the carbon fiber diameter of the substrate is 1 μm to 1 μm.
Since it is set to 00 μm, the heat transmitted through the carbon fiber is ensured, and the heat generated during the operation of the optical semiconductor element is well absorbed and is well dissipated in the atmosphere, and the optical semiconductor element is always kept at an appropriate temperature. It is possible to effectively prevent the semiconductor element from being thermally destroyed or being thermally deteriorated.

Furthermore, according to the optical semiconductor device accommodating package of the present invention, since the copper of the previous base body contains 0.2% by mass to 10% by mass of at least one of titanium, zirconium, hafnium, and chromium, When copper is impregnated into the base material in which the carbon fiber is three-dimensionally woven, the wettability between the base material carbon fiber and copper is improved, and the filling of the base material in which the carbon fiber is three-dimensionally woven is more robust. In addition, the airtightness of the base itself is made more reliable, and the airtight sealing of the cavity for housing the semiconductor element of the package for optical semiconductor element storage manufactured using the base is always perfect, and The semiconductor element can be operated stably and normally.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a package for storing an optical semiconductor element of the present invention.

FIG. 2 is a plan view showing an embodiment of an optical semiconductor element housing package of the present invention.

[Explanation of symbols]

1 ... Base 1a ... ・ Mounting part 2 ... Metal frame 2a ... through-hole 2b ... ・ Notch 3 ... Lid member 4 ... Optical semiconductor device 5 ... Container 6 ... Fixing member 7: Translucent member 8: Optical fiber member 9: Ceramic terminal body 10 ... Ceramic insulator 11 ... Wiring layer 12 ... Bonding wire 13 ... External lead terminals

Claims (4)

[Claims] 1. A base having a mounting portion on which an optical semiconductor element is mounted, a metal frame attached to the base so as to surround the optical semiconductor element mounting portion, and the metal. A package for storing an optical semiconductor element, which comprises a lid member that is attached on a frame body and hermetically seals the inside of a metal frame body, wherein the base body is a base material formed by three-dimensionally knitting carbon fibers and copper. A package for housing an optical semiconductor element, which is formed by impregnation. 2. A package for accommodating an optical semiconductor element according to claim 1, wherein a difference in thermal expansion coefficient between the base and the metal frame is 2 ppm / ° C. or less. 3. The carbon fiber diameter of the substrate is 1 μm to 100 μm.
The package for storing an optical semiconductor element according to claim 1, wherein the package is μm. 4. The optical semiconductor device accommodating device according to claim 1, wherein the base copper contains 0.2% by mass to 10% by mass of at least one of titanium, zirconium, hafnium and chromium. package.