JP2006086391A - Led package - Google Patents

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JP2006086391A
JP2006086391A JP2004270783A JP2004270783A JP2006086391A JP 2006086391 A JP2006086391 A JP 2006086391A JP 2004270783 A JP2004270783 A JP 2004270783A JP 2004270783 A JP2004270783 A JP 2004270783A JP 2006086391 A JP2006086391 A JP 2006086391A
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carbon material
led
metal base
led chip
chip
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Daisuke Fukushima
大輔 福島
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NEC Schott Components Corp
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NEC Schott Components Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED package which inhibits a decline in light-emitting efficiency, selecting and using a highly heat conductive material which makes heat dissipation property higher, in order to cope with heat generation from the LED chip of an LED light emitting device. <P>SOLUTION: In the package for the light emitting device including a frame metal base 11, the LED chip 12, and an insulating member 14 which leads out a lead member 13 connected to the LED chip 12; the LED package 10 is constituted by mounting the LED chip 12 at a predetermined position in the frame of the metal base 11, in such a state as the chip is directly put into contact with the highly heat conductive carbon material 16 of a metal impregnated carbon material (MICC). When the metal base 11 comprises a mortar shape side wall member 18 and a bottom plate member 19, the insulating member 14 forms an opening 15 and a conductive pattern is provided for leading outside. The LED chip is mounted on the highly heat conductive carbon material arranged at the opening, and is connected with a lead through a wire bonding 17 and the conductive pattern for leading outside. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、熱伝導性が高く放熱性が良好な部材をLEDチップ用搭載台に使用した半導体発光装置用パッケージに関する。   The present invention relates to a package for a semiconductor light emitting device in which a member having high thermal conductivity and good heat dissipation is used for an LED chip mounting base.

LEDを使用した発光装置は、近年、各種光源として広く利用されている。発光素子は半導体発光ダイオードからなり、LEDチップと呼ばれ適当なパッケージに組み込まれて使用される。LEDパッケージには電源供給用リードが設けられている。このリードの導出状況に応じてアキシャルタイプ、ラジアルタイプあるいはチップタイプなどがあり、配線基板等に使用する場合はスペースファクターで有利な表面実装用チップタイプが多用されている。通常、LEDチップは適用な容器内に収容してパッケージ化され、樹脂材のモールドによる発光効率の改善方法も提案されている。例えば、LEDチップの容器ベースへの搭載に関して、特許文献1は透光性絶縁体を介して配置されたパッケージでの発光効率の改善提案が開示される。また、特許文献2および3には発光の高輝度化や均一化のための外装改善や演色性や色度ズレを抑える発光装置が提案される。更には、特許文献4は金属パッケージを使用する場合の構造上の改善提案を開示する。
特開平9−307145号公報 特開平10−190065号公報 特開2004−71726号公報 特開2004−186309号公報
In recent years, light emitting devices using LEDs have been widely used as various light sources. The light emitting element is composed of a semiconductor light emitting diode, which is called an LED chip, and is used by being incorporated in an appropriate package. The LED package is provided with power supply leads. There are an axial type, a radial type, a chip type, and the like according to the lead lead-out state, and a surface mounting chip type that is advantageous in terms of space factor is often used when used for a wiring board or the like. Usually, LED chips are housed in an appropriate container and packaged, and a method for improving light emission efficiency by molding a resin material has also been proposed. For example, regarding the mounting of an LED chip on a container base, Patent Document 1 discloses a proposal for improving luminous efficiency in a package arranged via a light-transmitting insulator. Patent Documents 2 and 3 propose light emitting devices that improve exterior for higher luminance and uniform light emission, and suppress color rendering and chromaticity deviations. Furthermore, Patent Document 4 discloses a structural improvement proposal when a metal package is used.
JP-A-9-307145 Japanese Patent Laid-Open No. 10-190065 JP 2004-71726 A JP 2004-186309 A

例えば、LEDチップを収容するベース基板やパッケージを従来のセラミクス構造とする場合、底板の台座と傾斜空間を形成する側壁とはそれぞれ別個にグリーンシートを用意し、焼成して製作しなければならない。各グリーンシートは必要な電極印刷やパンチングなど加工処理が必要であり、製作過程で寸法上のばらつきや微細加工に伴う不具合が発生し、かつ焼成合体の困難性が問題となっている。特に、母材がアルミナセラミクスである場合、放熱性が悪く、LEDチップの発熱を加速して発光効率を低下させるなどの欠陥がある。こうしたセラミクス構造の欠陥を解消するために特許文献4が開示するような金属パッケージ構造の半導体発光装置が提案されているが、放熱性において満足するものでなかった。   For example, when a base substrate or a package that accommodates an LED chip has a conventional ceramic structure, a green sheet must be prepared and fired separately from the base of the bottom plate and the side wall forming the inclined space. Each green sheet requires processing such as necessary electrode printing and punching, causes dimensional variations in the manufacturing process, defects associated with fine processing, and difficulty in firing and coalescence. In particular, when the base material is alumina ceramics, heat dissipation is poor, and there are defects such as accelerating the heat generation of the LED chip and lowering the light emission efficiency. In order to eliminate such a defect in the ceramic structure, a semiconductor light emitting device having a metal package structure as disclosed in Patent Document 4 has been proposed, but it was not satisfactory in heat dissipation.

ところで、集積度が大きくなり高輝度発光のために高出力化する場合が多用される中での問題点は放熱対策である。そして、パッケージの使用部材として、特に熱伝導性が優れて放熱性と信頼性を高め、小型で安価にできることが望まれている。更に、高輝度化や高出力化に加えて小型化による温度上昇に伴う発光効率の低下などの弊害に鑑み、発熱源となるLEDチップの搭載基板とこれを取り囲むパッケージ部材の放熱性の改善が要請される。   By the way, a problem in the case where the degree of integration is increased and the output is increased for high luminance light emission is a countermeasure for heat dissipation. As a member used for the package, it is desired that the thermal conductivity is particularly excellent, the heat dissipation and the reliability are improved, and the package is small and inexpensive. Furthermore, in view of adverse effects such as lowering of luminous efficiency due to temperature rise due to miniaturization in addition to higher brightness and higher output, the heat dissipation of the LED chip mounting substrate which is a heat source and the package member surrounding it is improved. Requested.

したがって、この発明は上記欠点に鑑みて提案されたものであリ、LEDチップの搭載基板に熱伝導性が良好な材料を使用して発光装置を構成した新規かつ改良されたLEDパッケージの提供を目的とする。   Accordingly, the present invention has been proposed in view of the above disadvantages, and provides a new and improved LED package in which a light emitting device is configured by using a material having good thermal conductivity for a mounting substrate of an LED chip. Objective.

本発明によれば、枠体金属ベースと、この金属ベースの枠内に配置したLEDチップと、このチップと電気的に接続したリード部材を導出する絶縁部材とからなる発光装置用パッケージにおいて、LEDチップは金属ベースの所定位置に高熱伝導カーボン材に接して搭載したことを特徴とするLEDパッケージが提供される。ここで、高熱伝導カーボン材は金属含浸炭素材(MICC)およびMICC−銅ハイブリッド材あるいはMICC−アルミニウムハイブリッド材などの複合材が使用されることを特徴とする。金属含浸炭素複合材は高熱伝導であるのみならず低熱膨張、低弾性で軽量材料であって半導体材料の発熱対策に有効な材料である。   According to the present invention, in a light emitting device package comprising a frame metal base, an LED chip disposed in the metal base frame, and an insulating member that leads out a lead member electrically connected to the chip, An LED package is provided in which the chip is mounted at a predetermined position on a metal base in contact with a high thermal conductivity carbon material. Here, the high thermal conductivity carbon material is characterized by using a metal-impregnated carbon material (MICC) and a composite material such as MICC-copper hybrid material or MICC-aluminum hybrid material. The metal-impregnated carbon composite material is not only highly heat-conductive, but also has a low thermal expansion, low elasticity, and is a lightweight material, and is an effective material for heat generation countermeasures for semiconductor materials.

本発明はLEDチップを収容するベース基板あるいはパッケージの構成部材として高熱伝導カーボン材の単体または複合材をチップ用搭載台として使用したので高い放熱性が確保されると共に材料および加工上のコストが低く押さえられて、安価で信頼性の高いLEDパッケージを提供する。特に、放熱性の良いMICCまたはその複合材をLEDペレットの搭載基板に使用するのでLEDペレットの発熱を直に吸収して放熱体へ伝導するので温度上昇を抑止して発光効率を低下させない。加えて、チップマウントに対しての材料特性が半導体部品にマッチしているので製造面での処理加工性が改良され量産化やローコスト化にも大きく寄与するなど工業的価値が高められる。   In the present invention, since a single or composite material of a high thermal conductivity carbon material is used as a chip mounting base as a base substrate or package component for housing an LED chip, high heat dissipation is ensured and material and processing costs are low. An inexpensive and highly reliable LED package can be provided. In particular, since MICC having a good heat dissipation property or a composite material thereof is used for the LED pellet mounting substrate, the heat generated from the LED pellet is directly absorbed and conducted to the heat dissipator, so that the temperature rise is suppressed and the luminous efficiency is not lowered. In addition, since the material characteristics for the chip mount match the semiconductor parts, the processability on the manufacturing side is improved, and the industrial value is greatly enhanced, such as contributing to mass production and low cost.

本発明の第1の実施態様は、枠体金属ベースと、LEDチップと、このチップに接続したリード部材を導出する絶縁部材とを備える発光装置用パッケージにおいて、金属ベースの枠内所定位置にLEDチップを高熱伝導カーボン材に直に接して搭載したことを特徴とするLEDパッケージであって、金属ベースはすり鉢状側壁部材と底板部材からなり、絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、LEDチップは底板部材上の開口部に配置した高熱伝導カーボン材に接して搭載され、ワイヤボンディングにより外部導出用導電パターンを経てリード部材と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材としては金属含浸炭素材またはその複合材の使用が好ましく、例えば、カーボン粉末あるいはカーボン繊維を固めて焼成し、CuまたはAl等の金属を含浸させ、または粉末焼成させた材料である。熱伝導はカーボンの二次元結晶面の格子振動で伝わり150〜300mW/℃の高い熱伝導性を示す。また、高熱伝導カーボン材は焼成方法や含浸金属の違いにより若干の相違があるが、好ましくは熱伝導度が150mW/℃以上であることが望ましい。また、熱膨張係数は6〜10ppm/℃でコバー金属材やSi、GaAs等の半導体の熱膨張係数と非常に近く、ヤング率が低い。したがって、カーボン材の上に金属、Si、GaAs等の半導体と接合しても非常に信頼性が高い接合ができる。   According to a first embodiment of the present invention, there is provided a light emitting device package comprising a frame metal base, an LED chip, and an insulating member for leading a lead member connected to the chip. The LED package is characterized in that the chip is mounted in direct contact with the high thermal conductivity carbon material, the metal base is composed of a mortar-shaped side wall member and a bottom plate member, the insulating member forms an opening and the conductive for external lead-out A LED package having a structure in which a pattern is provided, the LED chip is mounted in contact with a high thermal conductive carbon material disposed in an opening on a bottom plate member, and connected to a lead member through an external lead-out conductive pattern by wire bonding. Here, it is preferable to use a metal-impregnated carbon material or a composite material thereof as the high thermal conductivity carbon material. For example, carbon powder or carbon fiber is hardened and fired, impregnated with a metal such as Cu or Al, or powder fired. Material. The heat conduction is transmitted by lattice vibration of the two-dimensional crystal plane of carbon and exhibits high heat conductivity of 150 to 300 mW / ° C. The high thermal conductivity carbon material has some differences depending on the firing method and the impregnated metal, but preferably the thermal conductivity is 150 mW / ° C. or higher. The coefficient of thermal expansion is 6 to 10 ppm / ° C., which is very close to the coefficient of thermal expansion of a semiconductor such as a cover metal material, Si, or GaAs, and has a low Young's modulus. Therefore, even if a metal, Si, GaAs or the like is bonded on the carbon material, bonding with extremely high reliability can be achieved.

本発明の第2の実施態様は、枠体金属ベースと、LEDチップと、このチップに接続したリード部材を導出する絶縁部材とを備える発光装置用パッケージにおいて、金属ベースの枠内所定位置にLEDチップを高熱伝導カーボン材に接して搭載したことを特徴とするLEDパッケージであって、金属ベースはすり鉢状側壁部材からなり、絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、LEDチップは開口部で金属ベースの底辺側に配置した高熱伝導カーボン材に接して搭載され、ワイヤボンディングにより外部導出用導電パターンを経てリード部材と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材としては第1の実施態様と同様に金属含浸炭素材またはその複合材を使用して、150〜300mW/℃の高い熱伝導性を示すもの、好ましくは熱伝導度が150mW/℃以上であることが望ましい。   According to a second embodiment of the present invention, there is provided a light emitting device package comprising a frame metal base, an LED chip, and an insulating member for leading a lead member connected to the chip. An LED package characterized in that the chip is mounted in contact with a high thermal conductivity carbon material, the metal base is composed of a mortar-shaped side wall member, the insulating member is formed with an opening and an external lead-out conductive pattern, The LED chip is an LED package having a structure in which the LED chip is mounted in contact with a high thermal conductivity carbon material disposed on the bottom side of the metal base at an opening, and connected to a lead member through an external lead-out conductive pattern by wire bonding. Here, as the high thermal conductivity carbon material, a metal-impregnated carbon material or a composite material thereof is used as in the first embodiment, and a high thermal conductivity of 150 to 300 mW / ° C., preferably a thermal conductivity. It is desirable that it is 150 mW / ° C. or higher.

本発明の第3の実施態様は、枠体金属ベースと、LEDチップと、このチップに接続したリード部材を導出する絶縁部材とを備える発光装置用パッケージにおいて、金属ベースの枠内所定位置にLEDチップを高熱伝導カーボン材に接して搭載したことを特徴とするLEDパッケージであって、金属ベースはすり鉢状側壁部材と底板部材からなり、絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、LEDチップが開口部で底板部材の高熱伝導カーボン材に接して搭載され、LEDチップはワイヤボンディングにより外部導出用導電パターンを経てリード部材と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材としては第1の実施態様と同様に金属含浸炭素材またはその複合材が使用される。   According to a third embodiment of the present invention, there is provided a light emitting device package comprising a frame metal base, an LED chip, and an insulating member for leading a lead member connected to the chip. The LED package is characterized in that the chip is mounted in contact with a high thermal conductivity carbon material, the metal base is composed of a mortar-shaped side wall member and a bottom plate member, the insulating member forms an opening, and the conductive pattern for external derivation has The LED package is an LED package having a structure in which the LED chip is mounted in contact with the high thermal conductivity carbon material of the bottom plate member at the opening, and the LED chip is connected to the lead member through an external lead-out conductive pattern by wire bonding. Here, a metal-impregnated carbon material or a composite material thereof is used as the high thermal conductivity carbon material as in the first embodiment.

本発明の第4の実施態様は、枠体金属ベースと、LEDチップと、このチップに接続したリード部材を導出する絶縁部材とを備える発光装置用パッケージにおいて、金属ベースの枠内所定位置にLEDチップを高熱伝導カーボン材に接して搭載したことを特徴とするLEDパッケージであって、金属ベースはすり鉢状側壁部材と貫通孔を有する底板部材との一体成形体からなり、絶縁部材は前記リード部材を貫通植設し、リード部材の先端面を底板部材の貫通孔から突出させ、LEDチップは底板部材上に配置した高熱伝導カーボン材に接して搭載され、ワイヤボンディングによりリード部材の先端面と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材としては第1の実施態様と同様に金属含浸炭素材またはその複合材が使用される。さらに、このカーボン材は軽量で加工性に優れ、カーボン材の弾性率が小さいことも特徴の一つになっているため、高い集積度でLEDチップを搭載して小型化を図る発光装置への適用が可能である。たとえば、熱膨張係数の違う材料をカーボン材で積層しても、カーボン材が内部応力を吸収する。また、Cu板上にLED基板を直接ロウ付けすると熱膨張係数が2倍程度異なるためLED基板に応力が加わり、通常だとLED基板が割れてしまうものが、Cu箔を貼り合わせたカーボン材の複合基板の上にLED基板をロウ付けしても、カーボン材が熱膨張差による内部応力を吸収し、LED基板が割れることがない。したがって、このようなパッケージ構造ではLEDチップの発熱が直ちに高熱伝導カーボン材に吸収され放熱されるので発光効率の低下を招かない。   According to a fourth embodiment of the present invention, there is provided a light emitting device package comprising a frame metal base, an LED chip, and an insulating member for leading a lead member connected to the chip. An LED package comprising a chip mounted in contact with a high thermal conductivity carbon material, wherein the metal base is an integrally formed body of a mortar-shaped side wall member and a bottom plate member having a through hole, and the insulating member is the lead member The LED chip is mounted in contact with the high thermal conductivity carbon material placed on the bottom plate member, and connected to the tip surface of the lead member by wire bonding. This is an LED package having the structure described above. Here, a metal-impregnated carbon material or a composite material thereof is used as the high thermal conductivity carbon material as in the first embodiment. In addition, this carbon material is lightweight, excellent in workability, and has a low elastic modulus, which is one of the features of the carbon material. Applicable. For example, even if materials having different thermal expansion coefficients are laminated with a carbon material, the carbon material absorbs internal stress. Also, if the LED substrate is brazed directly on the Cu plate, the thermal expansion coefficient differs by about twice, so stress is applied to the LED substrate, and the LED substrate is cracked normally. Even if the LED substrate is brazed onto the composite substrate, the carbon material absorbs internal stress due to the difference in thermal expansion, and the LED substrate does not break. Therefore, in such a package structure, the heat generated by the LED chip is immediately absorbed and dissipated by the high thermal conductive carbon material, and thus the light emission efficiency is not lowered.

以下、本発明の第1の実施態様であるアキシャルリードタイプのLEDパッケージについて、図1を参照しつつ説明する。LEDパッケージ10は枠体金属ベース11と、LEDチップ12と、このLEDチップ12に接続されるリード部材13を導出する絶縁部材14とを備える発光装置用パッケージにおいて、金属ベース11の枠内にある所定位置にLEDチップ12を高熱伝導カーボン材16と直に接するようろう材または接着剤で搭載して構成される。金属ベース11はすり鉢状側壁部材18と底板部材19からなり、絶縁部材14は開口部15を形成すると共に外部導出用導電パターンが設けられ、LEDチップ12は底板部材上の開口部15に配置した高熱伝導カーボン材16に直に接して搭載され、ワイヤボンディング17により外部導出用導電パターンを経由してリード部材13と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材16は金属含浸炭素材(MICC)が使用された。具体的にはカーボン粉末あるいはカーボン繊維を固めて焼成し、CuまたはAl等の金属を含浸させたものである。熱伝導はカーボンの二次元結晶面の格子振動で伝わり150〜300mW/℃の高い熱伝導性を示す。   Hereinafter, an axial lead type LED package according to a first embodiment of the present invention will be described with reference to FIG. The LED package 10 is a light emitting device package including a frame metal base 11, an LED chip 12, and an insulating member 14 for leading a lead member 13 connected to the LED chip 12. The LED chip 12 is mounted at a predetermined position with a brazing material or an adhesive so as to be in direct contact with the high thermal conductivity carbon material 16. The metal base 11 includes a mortar-shaped side wall member 18 and a bottom plate member 19, the insulating member 14 forms an opening 15 and is provided with a conductive pattern for leading out, and the LED chip 12 is disposed in the opening 15 on the bottom plate member. The LED package is mounted in direct contact with the high thermal conductivity carbon material 16 and connected to the lead member 13 by wire bonding 17 via an external lead-out conductive pattern. Here, a metal-impregnated carbon material (MICC) was used as the high thermal conductivity carbon material 16. Specifically, carbon powder or carbon fiber is hardened and fired, and impregnated with a metal such as Cu or Al. The heat conduction is transmitted by lattice vibration of the two-dimensional crystal plane of carbon and exhibits high heat conductivity of 150 to 300 mW / ° C.

第2の実施態様は、図2に示されるように、LEDパッケージ20は枠体金属ベース21と、LEDチップ22と、このチップに接続したリード部材23を導出するセラミクスの絶縁部材24とを備える発光装置用パッケージにおいて、金属ベース21の枠内所定位置にLEDチップ22を高熱伝導カーボン材26に直に接して搭載される。金属ベース21はすり鉢状側壁部材28からなり、絶縁部材24は開口部25を形成すると共に外部導出用導電パターンが設けられ、LEDチップ22は開口部25で金属ベース21の底板部材ともなる高熱伝導カーボン材26に接して搭載され、ワイヤボンディング27により外部導出用導電パターン経由でリード部材23と接続した構造である。ここで、高熱伝導カーボン材26は第1の実施例と同様に150〜300mW/℃の高い熱伝導性を有する金属含浸炭素材を使用した。   In the second embodiment, as shown in FIG. 2, the LED package 20 includes a frame body metal base 21, an LED chip 22, and a ceramic insulating member 24 for leading a lead member 23 connected to the chip. In the light emitting device package, the LED chip 22 is mounted at a predetermined position in the frame of the metal base 21 in direct contact with the high thermal conductivity carbon material 26. The metal base 21 is composed of a mortar-shaped side wall member 28, the insulating member 24 is formed with an opening 25 and an external lead-out conductive pattern is provided, and the LED chip 22 is a high thermal conductivity that also serves as a bottom plate member of the metal base 21 at the opening 25. The structure is mounted in contact with the carbon material 26 and is connected to the lead member 23 via the external lead-out conductive pattern by wire bonding 27. Here, the high thermal conductivity carbon material 26 was a metal-impregnated carbon material having a high thermal conductivity of 150 to 300 mW / ° C. as in the first embodiment.

第3の実施態様は、図3に示されるように、LEDパッケージ30は枠体金属ベース31と、LEDチップ32と、このチップに接続したリード部材33を導出するセラミクスの絶縁部材34とを備える発光装置用パッケージにおいて、金属ベース31の枠内所定位置にLEDチップ32を高熱伝導カーボン材36に直に接して搭載され、金属ベース31はすり鉢状側壁部材38および底板部材39からなり、絶縁部材34は開口部35を形成すると共に外部導出用導電パターンが設けられ、LEDチップ32は開口部35で金属ベース31の底板部材39と貼り合わせた高熱伝導カーボン材36に接して搭載され、ワイヤボンディング37により外部導出用導電パターン経由でリード部材33と接続した構造である。ここで、高熱伝導カーボン材36は第1の実施例と同様に150〜300mW/℃の高い熱伝導性を有する金属含浸炭素材を使用した。   In the third embodiment, as shown in FIG. 3, the LED package 30 includes a frame metal base 31, an LED chip 32, and a ceramic insulating member 34 for leading a lead member 33 connected to the chip. In the light emitting device package, the LED chip 32 is mounted in a predetermined position within the frame of the metal base 31 in direct contact with the high thermal conductivity carbon material 36. The metal base 31 includes a mortar-shaped side wall member 38 and a bottom plate member 39, and is an insulating member. 34 has an opening 35 and is provided with a conductive pattern for leading out, and the LED chip 32 is mounted in contact with the high thermal conductivity carbon material 36 bonded to the bottom plate member 39 of the metal base 31 at the opening 35, and wire bonding. 37 is connected to the lead member 33 via an external lead-out conductive pattern. Here, the high thermal conductivity carbon material 36 was a metal-impregnated carbon material having a high thermal conductivity of 150 to 300 mW / ° C. as in the first embodiment.

第4の実施態様は、図4に示されるように、LEDパッケージ40は枠体金属ベース41と、LEDチップ42と、このチップに接続したリード部材43を導出するガラスの絶縁部材44とを備える発光装置用パッケージにおいて、枠体金属ベース41は金属ベースの枠内所定位置にLEDチップ42を高熱伝導カーボン材46に接して搭載したことを特徴とするLEDパッケージであって、金属ベース41はすり鉢状側壁部材48と開口の貫通孔を有する底板部材49からなり、ガラスからなる絶縁部材44はその開口部45にリード部材43を貫通植設し、このリード部材の先端面を底板部材49の貫通孔から突出させ、LEDチップ42は底板部材上に配置した高熱伝導カーボン材46に接して搭載され、ワイヤボンディング47によりリード部材の先端面と接続した構造のLEDパッケージである。ここで、高熱伝導カーボン材46は第1の実施例と同様に150〜300mW/℃の高い熱伝導性を有する金属含浸炭素材を使用した。また、リード部材43はガラスの絶縁体部材44に貫通する状態で埋設され、裏面側にターミナル電極を露呈して表面実装用チップタイプ構造としている。   In the fourth embodiment, as shown in FIG. 4, the LED package 40 includes a frame metal base 41, an LED chip 42, and a glass insulating member 44 that leads out a lead member 43 connected to the chip. In the light emitting device package, the frame metal base 41 is an LED package in which the LED chip 42 is mounted in a predetermined position in the frame of the metal base in contact with the high thermal conductivity carbon material 46. The metal base 41 is a mortar. An insulating member 44 made of glass has a lead member 43 penetrating through the opening 45, and the leading end surface of the lead member penetrates the bottom plate member 49. The LED chip 42 is mounted in contact with the high thermal conductivity carbon material 46 disposed on the bottom plate member, and protrudes from the hole. The structure LED package that is connected to the distal end surface of the lead member. Here, the high thermal conductivity carbon material 46 was a metal-impregnated carbon material having a high thermal conductivity of 150 to 300 mW / ° C. as in the first embodiment. The lead member 43 is embedded in a state of penetrating the glass insulator member 44, and a terminal electrode is exposed on the back surface side to form a surface mount chip type structure.

上述する実施例に使用する高熱伝導カーボン材(MICC)は、高熱伝導である他に弾性率が小さく(低弾性)、低熱膨張という特性を有し、かつ強度が強く軽量で加工性に優れており、低コスト材料として機械的強度が大きく加工上の不具合もなく安定した性能を発揮できる。すなわち、従来のセラミクスパッケージはグリーンシートを複数枚重ねて焼成したコファイヤーと呼ばれるセラミクス板を積層して作製されていたのでパッケージコストが高くなっていたが、本発明によるカーボン材の使用はコスト面でも格段に有利であり、小型化の進むLED発光装置分野への適用が促進される。   The high thermal conductivity carbon material (MICC) used in the above-described embodiments has high thermal conductivity, low elastic modulus (low elasticity), low thermal expansion, and high strength, light weight and excellent workability. As a low-cost material, it has high mechanical strength and can exhibit stable performance without any processing problems. In other words, the conventional ceramic package was manufactured by laminating a ceramic plate called a cofirer in which a plurality of green sheets were stacked and baked, so the package cost was high. However, it is extremely advantageous, and the application to the field of LED light emitting devices that are becoming smaller is promoted.

この発明は放熱性の要求されるLED発光装置のパッケージ部材に適用され、LEDチップの発熱による温度上昇を抑止して発光効率を改善する製品を提供する。   The present invention is applied to a package member of an LED light-emitting device that requires heat dissipation, and provides a product that improves luminous efficiency by suppressing a temperature rise due to heat generation of the LED chip.

本発明に係る実施例1のLEDパッケージの主要部分を示す断面図である。It is sectional drawing which shows the principal part of the LED package of Example 1 which concerns on this invention. 同じく実施例2のLEDパッケージの主要部分を示す断面図である。Similarly, it is sectional drawing which shows the principal part of the LED package of Example 2. FIG. 同じく実施例3のLEDパッケージの主要部分を示す断面図である。Similarly, it is sectional drawing which shows the principal part of the LED package of Example 3. FIG. 同じく実施例4のLEDパッケージの主要部分を示す断面図である。Similarly, it is sectional drawing which shows the principal part of the LED package of Example 4. FIG.

符号の説明Explanation of symbols

10,20,30,40;LEDパッケージ、
11,21,31,41;金属ベース、
12,22,32,42;LEDチップ、
13,23,33,43;リード部材、
14,24,34,44;絶縁部材(セラミック、ガラス)、
15,25,35,45;開口部、
16,26,36,46;高熱伝導カーボン材(金属含浸炭素材または複合材)、
17,27,37,47;ワイヤボンディング
18,28,38,48;すり鉢状側壁部材
19,39,49; 底板部材

10, 20, 30, 40; LED package,
11, 21, 31, 41; metal base,
12, 22, 32, 42; LED chip,
13, 23, 33, 43; lead member,
14, 24, 34, 44; insulating member (ceramic, glass),
15, 25, 35, 45; opening,
16, 26, 36, 46; high thermal conductivity carbon material (metal-impregnated carbon material or composite material),
17, 27, 37, 47; wire bonding 18, 28, 38, 48; mortar-shaped side wall members 19, 39, 49;

Claims (6)

枠体状の金属ベースと、この金属ベースの枠内に配置したLEDチップと、このチップと電気的に接続されるリード部材と、このリード部材を保持する絶縁部材とを具備する発光装置用パッケージにおいて、前記LEDチップは前記金属ベースの所定位置で高熱伝導カーボン材に接して搭載したことを特徴とするLEDパッケージ。 Light emitting device package comprising: a frame-shaped metal base; an LED chip disposed within the metal base frame; a lead member electrically connected to the chip; and an insulating member holding the lead member Wherein the LED chip is mounted in contact with a high thermal conductivity carbon material at a predetermined position of the metal base. 前記高熱伝導カーボン材は金属含浸炭素材またはその複合材であることを特徴とする請求項1に記載のLEDパッケージ。 The LED package according to claim 1, wherein the high thermal conductivity carbon material is a metal-impregnated carbon material or a composite material thereof. 前記金属ベースはすり鉢状側壁部材と底板部材からなり、前記絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、前記LEDチップは前記底板部材上の前記開口部に配置した前記高熱伝導カーボン材と直に接して搭載され、ワイヤボンディングにより前記導電パターンを経て前記リード部材と接続したことを特徴とする請求項1または2に記載のLEDパッケージ。 The metal base is composed of a mortar-shaped side wall member and a bottom plate member, the insulating member forms an opening and is provided with a conductive pattern for leading out, and the LED chip is disposed in the opening on the bottom plate member. 3. The LED package according to claim 1, wherein the LED package is mounted in direct contact with a conductive carbon material and connected to the lead member through the conductive pattern by wire bonding. 前記金属ベースはすり鉢状側壁部材からなり、前記絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、前記LEDチップは前記開口部で前記金属ベースの底辺側に配置した前記高熱伝導カーボン材と直に接して搭載され、ワイヤボンディングにより前記導電パターンを経て前記リード部材と接続したことを特徴とする請求項1または2に記載のLEDパッケージ。 The metal base is formed of a mortar-shaped side wall member, the insulating member forms an opening and an external lead-out conductive pattern, and the LED chip is disposed on the bottom side of the metal base at the opening. The LED package according to claim 1, wherein the LED package is mounted in direct contact with a carbon material and connected to the lead member through the conductive pattern by wire bonding. 前記金属ベースはすり鉢状側壁部材と底板部材からなり、前記絶縁部材は開口部を形成すると共に外部導出用導電パターンが設けられ、前記LEDチップは前記開口部で前記底板部材上に配置した前記高熱伝導カーボン材と直に接して搭載され、ワイヤボンディングにより前記導電パターンを経て前記リード部材と接続したことを特徴とする請求項1または2に記載のLEDパッケージ。 The metal base includes a mortar-shaped side wall member and a bottom plate member, the insulating member forms an opening and is provided with a conductive pattern for external derivation, and the LED chip is disposed on the bottom plate member at the opening. 3. The LED package according to claim 1, wherein the LED package is mounted in direct contact with a conductive carbon material and connected to the lead member through the conductive pattern by wire bonding. 前記金属ベースはすり鉢状側壁部材と貫通孔を有する底板部材からなり、前記絶縁部材は前記リード部材を貫通植設し、このリード部材の先端面を前記底板部材の貫通孔から突出させ、前記LEDチップは前記底板部材上に配置した前記高熱伝導カーボン材に接して搭載され、ワイヤボンディングにより前記リード部材の先端面に接続したことを特徴とする請求項1または2に記載のLEDパッケージ。

The metal base includes a mortar-shaped side wall member and a bottom plate member having a through hole, and the insulating member penetrates the lead member, and a leading end surface of the lead member protrudes from the through hole of the bottom plate member, and the LED 3. The LED package according to claim 1, wherein the chip is mounted in contact with the high thermal conductivity carbon material disposed on the bottom plate member, and is connected to a front end surface of the lead member by wire bonding.

JP2004270783A 2004-09-17 2004-09-17 Led package Pending JP2006086391A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008031345A1 (en) * 2006-09-12 2008-03-20 Hong Kong Applied Science and Technology Research Institute Co. Ltd Semiconductor light emitting device
JP2008311644A (en) * 2007-06-12 2008-12-25 Hectotek Corp Base unit of light emitting diode package
CN101777620A (en) * 2009-12-31 2010-07-14 深圳市蓝科电子有限公司 High-power LED lead frame using graphite material as substrate, and preparation method
WO2010084824A1 (en) * 2009-01-22 2010-07-29 電気化学工業株式会社 Aluminum/graphite composite, and heat radiation part and led luminescent member both formed using same
JP2013069547A (en) * 2011-09-22 2013-04-18 Stanley Electric Co Ltd Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate
US8546827B2 (en) 2009-12-03 2013-10-01 Stanley Electric Co., Ltd. Semiconductor light emitting device
US20130299843A1 (en) * 2012-05-10 2013-11-14 Mitsubishi Electric Corporation Semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107190A (en) * 1996-10-01 1998-04-24 Tonen Corp Semiconductor package
JP2000236116A (en) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd Light source equipment
JP2002353516A (en) * 2001-03-19 2002-12-06 Nichia Chem Ind Ltd Light-emitting device
JP2003304027A (en) * 2002-04-12 2003-10-24 Kyocera Corp Package for housing optical semiconductor element
JP2004014735A (en) * 2002-06-06 2004-01-15 Toyo Tanso Kk Heat sink
JP2004228240A (en) * 2003-01-21 2004-08-12 Kyocera Corp Package for storing light emitting element and light emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107190A (en) * 1996-10-01 1998-04-24 Tonen Corp Semiconductor package
JP2000236116A (en) * 1999-02-15 2000-08-29 Matsushita Electric Works Ltd Light source equipment
JP2002353516A (en) * 2001-03-19 2002-12-06 Nichia Chem Ind Ltd Light-emitting device
JP2003304027A (en) * 2002-04-12 2003-10-24 Kyocera Corp Package for housing optical semiconductor element
JP2004014735A (en) * 2002-06-06 2004-01-15 Toyo Tanso Kk Heat sink
JP2004228240A (en) * 2003-01-21 2004-08-12 Kyocera Corp Package for storing light emitting element and light emitting device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008031345A1 (en) * 2006-09-12 2008-03-20 Hong Kong Applied Science and Technology Research Institute Co. Ltd Semiconductor light emitting device
JP2008311644A (en) * 2007-06-12 2008-12-25 Hectotek Corp Base unit of light emitting diode package
WO2010084824A1 (en) * 2009-01-22 2010-07-29 電気化学工業株式会社 Aluminum/graphite composite, and heat radiation part and led luminescent member both formed using same
JPWO2010084824A1 (en) * 2009-01-22 2012-07-19 電気化学工業株式会社 Aluminum-graphite composite, heat dissipation component using the same, and LED light-emitting member
JP5676278B2 (en) * 2009-01-22 2015-02-25 電気化学工業株式会社 Aluminum-graphite composite, heat dissipation component using the same, and LED light-emitting member
US8546827B2 (en) 2009-12-03 2013-10-01 Stanley Electric Co., Ltd. Semiconductor light emitting device
CN101777620A (en) * 2009-12-31 2010-07-14 深圳市蓝科电子有限公司 High-power LED lead frame using graphite material as substrate, and preparation method
JP2013069547A (en) * 2011-09-22 2013-04-18 Stanley Electric Co Ltd Heat dissipation substrate, its manufacturing method, and semiconductor device using heat dissipation substrate
US20130299843A1 (en) * 2012-05-10 2013-11-14 Mitsubishi Electric Corporation Semiconductor device
JP2013236010A (en) * 2012-05-10 2013-11-21 Mitsubishi Electric Corp Semiconductor device
US9041197B2 (en) 2012-05-10 2015-05-26 Mitsubishi Electric Corporation Semiconductor device

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