JP4789671B2 - WIRING BOARD FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - Google Patents

WIRING BOARD FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE Download PDF

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JP4789671B2
JP4789671B2 JP2006087280A JP2006087280A JP4789671B2 JP 4789671 B2 JP4789671 B2 JP 4789671B2 JP 2006087280 A JP2006087280 A JP 2006087280A JP 2006087280 A JP2006087280 A JP 2006087280A JP 4789671 B2 JP4789671 B2 JP 4789671B2
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light emitting
emitting element
metal body
wiring board
bonding
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JP2007266172A (en
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正光 鬼谷
智英 長谷川
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board for light emitting elements and the light emitting device which is miniaturizable and superior in heat dissipation performance and mounting reliability. <P>SOLUTION: An insulation base 1 and a metal body 8 comprise mutually vertically superposed and meshed steps so that the base 1 and the body 8 bond only at the mutually superposed bonded surfaces 8a, 12a of the steps, the inner through walls near these bonded surfaces and the side wall of the metal body. This greatly reduces the vertically superposed width of the steps and enough holds the sealing performance. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、発光ダイオード等の発光素子を搭載するための発光素子用配線基板ならびに発光装置に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、LEDを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などと比較すると発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も30mA程度、LEDの大きさ0.1mm程度、発熱量も0.01W程度と非常に小さいものであった(例えば特許文献1を参照。)。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated with light emission compared to incandescent bulbs. However, since it emits less light than incandescent bulbs, fluorescent lamps, etc., it is used as a light source for display rather than for illumination, with an energization amount of about 30 mA, an LED size of about 0.1 mm, and a heat generation amount of 0. It was very small, about .01 W (see, for example, Patent Document 1).

そして、近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶TV等のバックライトに発光装置が多く用いられている。また、間接照明やスポットライトなどの小型照明にも多く用いられている。しかしながら、発光素子の高輝度化に伴い、LEDの大きさも1mm、LEDからの発熱量も5Wと飛躍的に増加しており、発光素子の輝度の低下をなくす為には、このような熱を素子より速やかに放散する高い熱放散性を有する発光素子用配線基板が必要となっている。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices are often used for backlights of mobile phones, large liquid crystal TVs, and the like. It is also often used for small lighting such as indirect lighting and spotlights. However, as the brightness of the light emitting element is increased, the size of the LED is 1 mm and the amount of heat generated from the LED is dramatically increased to 5 W. In order to eliminate the decrease in the brightness of the light emitting element, such heat is used. There is a need for a light-emitting element wiring board having a high heat dissipation property that dissipates more rapidly than the element.

このため、半導体素子を内蔵する半導体装置では半導体素子を効率よく冷却するためにヒートシンクを具備することが行われてきたように(例えば特許文献2参照。)、発光素子用配線基板においても、素子からの熱を放散させる構造として、ヒートシンクを内蔵した配線基板構造が提案されている(例えば特許文献3参照。)。   For this reason, in a semiconductor device incorporating a semiconductor element, a heat sink has been provided in order to efficiently cool the semiconductor element (see, for example, Patent Document 2). As a structure for dissipating heat from the circuit board, a wiring board structure with a built-in heat sink has been proposed (see, for example, Patent Document 3).

一方、携帯電話などに搭載される発光装置においては小型の要求が非常に強く、発行装置自体の大きさが5mm□程度と小さく、今後も更なる小型化が進むと予測される。また、照明用の代替として適用する場合には、発光量を増やす観点から狭いスペースに多数の発光装置を配置することが必要になるため、照明用途に適用する場合にも発光装置の小型化が非常に重要になる。   On the other hand, a light emitting device mounted on a mobile phone or the like has a very strong demand for small size, and the size of the issuing device itself is as small as about 5 mm □, and further miniaturization is expected in the future. In addition, when applied as an alternative for lighting, it is necessary to arrange a large number of light emitting devices in a narrow space from the viewpoint of increasing the amount of emitted light, so that the light emitting device can be downsized even when applied to lighting applications. Become very important.

このような背景の下、今後、益々高出力に向かうことは必至であり、前述のように発光素子の高発熱化に対応し、かつ発光装置の小型化とあわせて、発光素子を搭載する配線基板の小型化および高熱伝導化が重要となる。そして、このように小型に対する要求が強い発光素子用配線基板においては、過大な放熱部材は不要であることはもちろん、放熱部材を接合する為の余分な面積も削除しなければならない。
特開2002−134790号公報 特開平10−321759号公報 特開2005−33194号公報
Against this backdrop, it is inevitable that the output will go higher and higher in the future. As described above, the light emitting element can be used for high heat generation, and the light emitting device can be miniaturized and the wiring on which the light emitting element is mounted. Miniaturization of the substrate and high thermal conductivity are important. And in such a light emitting element wiring board with a strong demand for small size, an excessive heat dissipating member is not necessary, and an extra area for joining the heat dissipating member must also be deleted.
JP 2002-134790 A Japanese Patent Laid-Open No. 10-321759 JP 2005-33194 A

しかしながら、特許文献2に記載の発明では半導体チップの熱を効率よく冷却するために、ヒートシンクを用いているが、封止性を維持するため絶縁基体とヒートシンクとの接合層幅を1mm以上とするため、ヒートシンクを含む配線基板の小型化には適用できないのが現状である。   However, in the invention described in Patent Document 2, a heat sink is used to efficiently cool the heat of the semiconductor chip. However, in order to maintain sealing performance, the bonding layer width between the insulating base and the heat sink is set to 1 mm or more. Therefore, the present situation is that it cannot be applied to miniaturization of a wiring board including a heat sink.

また、特許文献3のように絶縁層として樹脂を用い、半導体素子として発光素子を用いた場合には、絶縁層の熱膨張係数が大きいため、ヒートシンクと絶縁層との熱膨張差を小さくできることからCuなどの熱伝導率の高い金属からなるヒートシンクを用いることができるものの、微細な配線を形成することが困難で、しかも樹脂の熱伝導率が非常に小さいために、大型のヒートシンクを用いざるを得ず、発光素子に比べ、非常に大きな寸法のヒートシンクを内蔵した発光装置が流通している。   In addition, when a resin is used as the insulating layer and a light emitting element is used as the semiconductor element as in Patent Document 3, the thermal expansion coefficient of the insulating layer is large, so that the difference in thermal expansion between the heat sink and the insulating layer can be reduced. Although a heat sink made of a metal having a high thermal conductivity such as Cu can be used, it is difficult to form fine wiring, and the thermal conductivity of the resin is very low, so a large heat sink must be used. In other words, light-emitting devices with a built-in heat sink having a very large size compared to light-emitting elements are in circulation.

つまり、安価で、小型で、熱放散性に優れ、実装信頼性に優れた配線基板は未だ提供されていないのである。   In other words, a wiring board that is inexpensive, small, excellent in heat dissipation, and excellent in mounting reliability has not yet been provided.

従って本発明は、安価で、小型で、熱放散性に優れた発光素子用配線基板ならびに発光装置を提供することを目的とする。   Accordingly, an object of the present invention is to provide a light emitting element wiring board and a light emitting device which are inexpensive, small in size and excellent in heat dissipation.

本発明の発光素子用配線基板は、平板状のセラミックスからなる絶縁基体の表面又は内部のうち少なくとも一方に導体層が形成され、前記絶縁基体の主面間を貫通する貫通孔に金属体が挿入されて接合材により前記絶縁基体と前記金属体とが接合された発光素子用配線基板であって、前記貫通孔の内壁段差を有するとともに、前記金属体の側面に、前記段差と上下に重なり合うように噛み合う段差が設けられており、前記貫通孔の段差および
前記金属体の段差の上下方向に互いに向い合う接合面同士および前記貫通孔側の前記接合面より上側および前記接合面より下側の少なくとも一方において、前記貫通孔の内壁と前記金属体とが、前記接合面の近傍のみで接合されており、かつ互いに向い合う前記接合面の距離が前記貫通孔の外周方向へ向けて変化していることを特徴とする。
In the wiring board for light emitting device of the present invention, a conductor layer is formed on at least one of the surface or the inside of a flat ceramic substrate, and a metal body is inserted into a through-hole penetrating between the main surfaces of the insulating substrate. a said insulating substrate and the wiring substrate for light-emitting element and the metal body is bonded by bonding material is, the inner wall of the through hole having a stepped Rutotomoni, the side surface of the metal body, the step up and down and step meshing is provided so as to overlap, below the upper and the joint surface from the bonding surfaces of the upper and lower joint surfaces facing each other in a direction other and the through-hole side of the step of the step and the metal body of the through hole in at least one side, prior Symbol inner wall of the through hole and said metal body, wherein are joined only in the vicinity of the joint surface, and the distance of the joining surfaces facing each other circumferentially of the through-hole Characterized in that it changes toward.

また、本発明の発光素子用配線基板は、前記絶縁基体に前記接合が接合される接合用の金属が配されてなることが望ましい。
In the light-emitting element wiring board of the present invention, it is preferable that a bonding metal layer for bonding the bonding material is disposed on the insulating base.

また、本発明の発光素子用配線基板は、前記金属面が前記絶縁基体に埋め込まれた焼結金属体であることが望ましい。   In addition, the light emitting element wiring board of the present invention is preferably a sintered metal body in which the metal surface is embedded in the insulating base.

また、本発明の発光素子用配線基板は、前記接合面の幅が1mm未満であることが望ましい。   In the light emitting element wiring board of the present invention, it is desirable that the width of the bonding surface is less than 1 mm.

また、本発明の発光装置は、以上説明した発光素子用配線基板に発光素子を搭載してなることを特徴とする。   The light emitting device of the present invention is characterized in that the light emitting element is mounted on the light emitting element wiring board described above.

本発明の発光素子用配線基板によれば、段差の重なり合う幅を格段に小さくできるとともに、充分な封止性を維持することができる。そのため、発光素子用配線基板の小型化と熱放散性を向上させることができる。
According to the light emitting element wiring board of the present invention, it is possible to maintain Rutotomoni can significantly reduce the overlapping width stepped difference, sufficient sealing properties. Therefore, it is possible to reduce the size and heat dissipation of the light emitting element wiring board.

また、本発明の発光素子用配線基板によれば、絶縁基体に接合用の金属面を配することで、精度よく、絶縁基体と金属体との間に接合材を配置することができる。   Moreover, according to the wiring board for light emitting elements of the present invention, the bonding material can be arranged between the insulating base and the metal body with high accuracy by arranging the metal surface for bonding on the insulating base.

また、本発明の発光素子用配線基板によれば、前記金属面を絶縁基体に埋め込まれた焼結金属により形成することで、絶縁基体の焼成工程で同時に金属面を形成することができるため、工数やコストを削減することができる。   Further, according to the wiring board for a light emitting element of the present invention, since the metal surface is formed of sintered metal embedded in the insulating base, the metal surface can be simultaneously formed in the firing process of the insulating base. Man-hours and costs can be reduced.

また、本発明の発光素子用配線基板によれば、接合面の幅は、容易に1mm未満とすることができ、小型で封止性に優れた発光素子用配線基板となる。   Moreover, according to the wiring board for light emitting elements of the present invention, the width of the bonding surface can be easily made less than 1 mm, and the wiring board for light emitting elements having a small size and excellent sealing properties is obtained.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、発光素子からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制できる。   According to the light emitting device of the present invention in which the light emitting element is mounted on the wiring substrate for the light emitting element of the present invention described above, the heat generation from the light emitting element can be quickly discharged outside the device, so that the luminance reduction due to the heat generation is suppressed. it can.

また、説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、小型で熱放散性に優れた発光装置となる。   Moreover, according to the light-emitting device of the present invention in which the light-emitting element is mounted on the light-emitting element wiring substrate of the present invention described above, the light-emitting device is small and excellent in heat dissipation.

本発明の発光素子用配線基板は、例えば、図1(a)、(b)に示すように、平板状の絶縁基体1と、この絶縁基体1の表裏面を貫通するように形成された貫通孔2と、絶縁基体1の主面1aに形成された発光素子との接続端子3、絶縁基体1の他方の主面1bに形成された外部電極端子5、接続端子3と外部電極端子5とを電気的に接続するように絶縁基体1を貫通して設けられた貫通導体7と、絶縁基体1を貫通して設けられた貫通孔2に挿入され、絶縁基体1に接合された絶縁基体1よりも熱伝導率が高い金属体8から構成されている。そして、一方の接続端子3aと他方の接続端子3bとの間には、発光素子を搭載するための搭載部9が形成されている。この搭載部9は金属体8の端面に形成されることが熱放散性の観点から望ましい。   The light emitting element wiring board of the present invention has, for example, a flat insulating base 1 and a through hole formed so as to penetrate the front and back surfaces of the insulating base 1 as shown in FIGS. 1 (a) and 1 (b). A connection terminal 3 between the hole 2 and the light emitting element formed on the main surface 1 a of the insulating base 1, an external electrode terminal 5 formed on the other main surface 1 b of the insulating base 1, a connection terminal 3 and an external electrode terminal 5 The insulating base 1 is inserted into the through-hole 7 provided through the insulating base 1 so as to be electrically connected to the through-hole 2 provided through the insulating base 1 and joined to the insulating base 1. It is comprised from the metal body 8 with higher heat conductivity. A mounting portion 9 for mounting a light emitting element is formed between one connection terminal 3a and the other connection terminal 3b. The mounting portion 9 is preferably formed on the end surface of the metal body 8 from the viewpoint of heat dissipation.

そして、絶縁基体1と金属体8とを接合させるため、両者の間には金属の接合材10が形成されている。   And in order to join the insulating base | substrate 1 and the metal body 8, the metal joining material 10 is formed between both.

本発明の発光素子用配線基板11では、接合材10は、例えば図2(a)に示すように接合面8a、12aの上下もしくは、図2(b)または図2(c)に示すように接合面8a、12aの上下いずれかの接合面8a、12aの近傍に介在していることが重要である。   In the light emitting element wiring substrate 11 of the present invention, the bonding material 10 is formed, for example, as shown in FIG. 2A, above and below the bonding surfaces 8a and 12a, or as shown in FIG. 2B or 2C. It is important to intervene in the vicinity of one of the upper and lower joint surfaces 8a, 12a of the joint surfaces 8a, 12a.

本発明においては、絶縁基体1ならびに金属体8にお互い上下に重なり合うように噛み合うような段差を設け、それぞれの段差の重なり合う接合面と、この接合面近傍の貫通孔2の内壁と金属体の側で、絶縁基体1と金属体8とを接合することにより、十分な接合面積を確保して、段差の重なり合う幅Wを格段に小さくするとともに、充分な封止性を維持することができる。
In the present invention, the insulating base 1 and the metal body 8 are provided with steps that mesh with each other so as to overlap each other, and the joint surface where each step overlaps , the inner wall of the through-hole 2 in the vicinity of the joint surface , and the metal body in the side surface, by bonding the insulating substrate 1 and the metal body 8, it can be maintained by securing a sufficient junction area, as well as significantly reduce the width W of overlap step, a sufficient sealing property .

つまり、金属体8と絶縁基体1との両者の側面同士で全面的に接合した場合には、金属体8の表面に露出した金属体8の角部8bに最も応力が集中するため、金属体8の角部bを絶縁基体1に接続、固定することなくフリーな状態を保つことで、絶縁基体1と金属体8の間の割れや剥離を回避することができる。なお、接合材10の介在しない深さが基板表面から0.05mmよりも小さい場合には、接合材10が絶縁基体1表面や金属体表面にはみ出しやすくなり、これにより発光素子を水平に搭載できなくなり、所望の発光特性を得ることができなくなる恐れがある。好ましくは、0.1mm以上、特に0.15mm以上が望ましい。   That is, when the metal body 8 and the insulating base 1 are bonded together on the entire side surfaces, the stress is most concentrated on the corner 8b of the metal body 8 exposed on the surface of the metal body 8. By maintaining the free state without connecting and fixing the corners b of the 8 to the insulating base 1, it is possible to avoid cracking or peeling between the insulating base 1 and the metal body 8. When the depth at which the bonding material 10 does not intervene is smaller than 0.05 mm from the substrate surface, the bonding material 10 easily protrudes from the surface of the insulating base 1 or the metal body surface, thereby enabling the light emitting element to be mounted horizontally. There is a possibility that desired light emission characteristics cannot be obtained. Preferably, it is 0.1 mm or more, particularly 0.15 mm or more.

しかも、絶縁基体1と金属体8の段差同士が向かい合う接合面8a、12aのみならず、この段差の近傍を利用して接合面積を広げることで十分な接合信頼性を確保しつつ、発光素子用配線基板11の小型化が可能となるのである。   In addition to the bonding surfaces 8a and 12a where the steps of the insulating substrate 1 and the metal body 8 face each other, the bonding area is expanded by utilizing the vicinity of the steps, and sufficient bonding reliability is ensured while the light emitting device is used. This makes it possible to reduce the size of the wiring board 11.

なお、図2(b)または図2(c)のように接合面となる段差部分の一方の近傍のみに接合材10が形成された場合でも、接合信頼性は十分に確保することができるが、特には段差の上下において応力を釣り合わせ、発光素子用配線基板11の反りを抑制するために段差の上下の近傍の側壁に接合材10を介在させることが望ましい。   In addition, even when the bonding material 10 is formed only in the vicinity of one of the stepped portions that become the bonding surface as shown in FIG. 2B or 2C, sufficient bonding reliability can be ensured. In particular, it is desirable to interpose the bonding material 10 on the side walls near the top and bottom of the step in order to balance the stresses above and below the step and suppress the warpage of the wiring board 11 for the light emitting element.

また、絶縁基体1の段差と金属体8の段差とが重なりあう接合面の幅Wは、小型化の観点から1mm未満とすることが望ましい。そして、本発明の発光素子用配線基板11によれば、従来困難であった絶縁基体1の段差と金属体8の段差とが重なりあう幅Wを1mm未満とした場合であっても十分な封止性を維持することができるのである。そして、この幅Wは、0.8mm以下、さらに0.6mm以下とすることが望ましい。また、0.1mm以上、特に0.2mm以上とすることが望ましい。   Further, the width W of the joint surface where the step of the insulating substrate 1 and the step of the metal body 8 overlap is preferably less than 1 mm from the viewpoint of miniaturization. According to the light emitting element wiring substrate 11 of the present invention, even if the width W where the step of the insulating substrate 1 and the step of the metal body 8 overlap, which has been difficult in the past, is less than 1 mm, sufficient sealing is achieved. The stopping property can be maintained. The width W is preferably 0.8 mm or less, and more preferably 0.6 mm or less. Moreover, it is desirable to set it as 0.1 mm or more, especially 0.2 mm or more.

また、絶縁基体1と金属体8とは金属からなるロウ材で接合するものであるが、セラミックスからなる絶縁基体1と接合材10を十分に接合させる為に、接合材10が介在する絶縁基体1の貫通孔2の内壁には絶縁基体1と同時焼結により形成された金属層12が形成されていることが望ましい。この金属層12の接合面12aが接合材10と濡れやすくなるために、接合材10が絶縁基体1に形成された金属層12と金属体8とを容易に接合させることができる。
The insulating base 1 and the metal body 8 are joined by a brazing material made of metal. In order to sufficiently join the insulating base 1 made of ceramic and the joining material 10, the insulating base in which the joining material 10 is interposed. It is desirable that a metal layer 12 formed by simultaneous sintering with the insulating substrate 1 is formed on the inner wall of one through hole 2 . Since the bonding surface 12a of the metal layer 12 is easily wetted with the bonding material 10, the metal layer 12 formed on the insulating base 1 and the metal body 8 can be easily bonded to the bonding material 10.

この金属層12は、例えば絶縁基体1を形成する焼結前のセラミックグリーンシートの貫通孔側壁に金属ペーストをスクリーン印刷法により塗布する方法や、或いは貫通孔内壁部のみに金属粉末を分散させた金属シートを配置させて、その他の絶縁層とを積層した後、焼成して形成することもできる。その他、金属層12を焼成後の絶縁基体に焼き付ける等の熱処理により形成してもよい。特に、金属層12と絶縁基体1とを同時焼成した場合には、言い換えると金属層12を焼結金属により形成した場合には金属層12と絶縁基体1とが強固に接合されるばかりでなく、安価で容易に発光素子用配線基板11を作製することもできる。   The metal layer 12 is formed by, for example, applying a metal paste to the through hole side wall of the ceramic green sheet before sintering to form the insulating substrate 1 by screen printing, or dispersing metal powder only on the inner wall portion of the through hole. It can also be formed by placing a metal sheet and laminating other insulating layers and then firing. Alternatively, the metal layer 12 may be formed by a heat treatment such as baking onto an insulating substrate after firing. In particular, when the metal layer 12 and the insulating substrate 1 are fired simultaneously, in other words, when the metal layer 12 is formed of sintered metal, the metal layer 12 and the insulating substrate 1 are not only firmly bonded. The light emitting element wiring substrate 11 can also be easily manufactured at low cost.

また、図3(a)、(b)に示すように貫通孔2と金属体8に形成した段差部分の接合面において、金属体8と絶縁基体1との距離を貫通孔2の外周に向けて変化させることがい。つまり、接合材10の溜め部が形成されることにより、基板表面への接合材10の流出、はみ出しを抑制できるばかりでなく、接合材10が、絶縁基体1と金属体8間に発生する応力を緩和するため接合信頼性が高まる。この絶縁基体1の主面と略平行な面における金属体との距離を変化させるためには、焼成前の絶縁基体の前駆体にあらかじめ穴加工や、型押し、或いはエッチング処理にて所定形状を形成しておくことで、絶縁基体を熱処理した後も同形状を得ることが可能となる。また、逆に、金属体にも加工を行うことにより、所望の形状を形成することができる。
Further, as shown in FIGS. 3A and 3B, the distance between the metal body 8 and the insulating base 1 is directed toward the outer periphery of the through hole 2 at the joint surface of the step portion formed in the through hole 2 and the metal body 8. not good is possible to change Te. In other words, the formation of the reservoir portion of the bonding material 10 not only can suppress the outflow and protrusion of the bonding material 10 to the substrate surface, but also the stress generated by the bonding material 10 between the insulating base 1 and the metal body 8. Therefore, bonding reliability is improved. In order to change the distance from the metal body in a plane substantially parallel to the main surface of the insulating base 1, a predetermined shape is formed in the precursor of the insulating base 1 before firing by drilling, embossing or etching in advance. By forming the film, it is possible to obtain the same shape even after the insulating substrate 1 is heat-treated. Conversely, the metal body 8 can be processed to form a desired shape.

なお、図3(c)に示すように、貫通孔2と金属体8に形成した段差部分の接合面において、絶縁基体における貫通孔2の外周方向に向けて接合面が連続的に傾斜することで、金属体8の接合面8aと金属層12の接合面12aの距離を外周方向で変化させることができる。これにより、接合材10の溜め部が形成されることにより、基板表面への接合材10の流出、はみ出しを抑制できるばかりでなく、接合材10が、絶縁基体1と金属体8間に発生する応力を緩和するため接合信頼性が高まる。   In addition, as shown in FIG.3 (c), in the joint surface of the level | step-difference part formed in the through-hole 2 and the metal body 8, a joint surface inclines toward the outer peripheral direction of the through-hole 2 in an insulating base | substrate. Thus, the distance between the joint surface 8a of the metal body 8 and the joint surface 12a of the metal layer 12 can be changed in the outer peripheral direction. As a result, by forming the reservoir portion of the bonding material 10, not only can the outflow and protrusion of the bonding material 10 to the substrate surface be suppressed, but the bonding material 10 is generated between the insulating base 1 and the metal body 8. Since the stress is relieved, the bonding reliability is increased.

なお、絶縁基体1の接合面12aを傾斜させる為の方法としては、前述の型押し以外にも、孔径の異なる貫通孔が形成されたグリーンシートを積層熱圧着する際に、高い圧力・温度を掛けて積層することにより、貫通孔外周に向けて、傾斜をもつ接合面を形成することができる。また、図3(c)には接合面距離が貫通孔外周に向けて大きくなる場合の断面形状の一例を示しており、その他、外周方向に向けて接合面間の距離を小さくすることによっても同様の効果が得られる。更に、図3(a)、(b)、(c)には絶縁基体に加工を施した場合を例示したが、金属体8に同様の形状を形成しても良い。   In addition, as a method for inclining the bonding surface 12a of the insulating substrate 1, a high pressure / temperature is applied when the green sheets having through holes having different hole diameters are laminated and thermocompression bonded, in addition to the above-described embossing. By laminating and stacking, an inclined joint surface can be formed toward the outer periphery of the through hole. FIG. 3 (c) shows an example of a cross-sectional shape when the joint surface distance increases toward the outer periphery of the through hole. In addition, by reducing the distance between the joint surfaces toward the outer peripheral direction. Similar effects can be obtained. 3A, 3B, and 3C illustrate the case where the insulating substrate is processed, the metal body 8 may be formed in the same shape.

また、図3(c)に示すように、貫通孔2の段差の上下の貫通孔側壁面と金属体8の側壁面との距離C2を0.3mm以下にすることが望ましい。両者の距離が0.3mmよりも大きい場合、貫通方向と略平行な壁面において、貫通孔2と金属体8の間への接合材10の移動が不十分となることがあり、段差の近傍において接合材10が形成されない場合があり、特性ばらつきが大きくなる恐れがある。なお、距離C2は、組み立て性と接合材10の充填性、言い換えると金属体8の側壁と絶縁基体に形成した金属層12の隙間に生じる毛細管力による接合材10の流れ性の観点より、特に0.1〜0.2mmが望ましい。   Further, as shown in FIG. 3C, it is desirable that the distance C2 between the side wall surface of the through hole 2 and the side wall surface of the metal body 8 above and below the step of the through hole 2 is 0.3 mm or less. When the distance between the two is larger than 0.3 mm, the movement of the bonding material 10 between the through hole 2 and the metal body 8 may be insufficient on the wall surface substantially parallel to the penetration direction. There is a case where the bonding material 10 is not formed, and there is a fear that the characteristic variation becomes large. In addition, the distance C2 is particularly preferable from the viewpoint of assembly property and filling property of the bonding material 10, in other words, flowability of the bonding material 10 due to capillary force generated in the gap between the side wall of the metal body 8 and the metal layer 12 formed on the insulating base. 0.1 to 0.2 mm is desirable.

以上説明したようにして、それぞれの段差の重なり合う接合面と、この接合面の近傍の貫通の内壁と金属体の側壁のみで、絶縁基体と金属体とを接合することにより、段差の重なり合う幅を格段に小さくするとともに、充分な封止性を維持することができる。   As described above, by joining the insulating base and the metal body only at the joint surface where each step overlaps, the inner wall of the penetration in the vicinity of the joint surface and the side wall of the metal body, the width at which the step overlaps is increased. While making it remarkably small, sufficient sealing performance can be maintained.

そして、貫通孔2に挿入され、固定される金属体8は、貫通方向に垂直な面における最大寸法が1〜3mmであり、貫通方向の最大寸法が0.15〜0.6mmであることが望ましい。すなわち、貫通孔2に貫通方向に垂直な面における最大寸法が1〜3mmである金属体8を挿入、固定することにより、発光素子用配線基板11の小型化を促進しつつ、発光素子からの発熱を速やかに放熱させることが可能となり、本願発明においては金属体8が貫通方向の最大寸法が0.15〜0.6mmである板状あるいは扁平な形状をしており、容易に変形し、絶縁基体1と金属体8との熱膨張差に起因して、両者の間に発生する応力を緩和し得る形状を備えるものであることが特に望ましい。   And as for the metal body 8 inserted and fixed to the through-hole 2, the maximum dimension in a surface perpendicular | vertical to a penetration direction is 1-3 mm, and the maximum dimension of a penetration direction is 0.15-0.6 mm. desirable. That is, by inserting and fixing the metal body 8 having a maximum dimension of 1 to 3 mm in the surface perpendicular to the penetration direction into the through hole 2, while promoting the miniaturization of the light emitting element wiring substrate 11, It becomes possible to quickly dissipate the heat generation, and in the present invention, the metal body 8 has a plate shape or a flat shape whose maximum dimension in the penetration direction is 0.15 to 0.6 mm, and easily deforms, Due to the difference in thermal expansion between the insulating substrate 1 and the metal body 8, it is particularly desirable to have a shape that can relieve the stress generated between them.

また、この金属体8の貫通方向に垂直な面における最大寸法は1mm以上であることが望ましく、1mmより小さくなると発光素子からの発熱を十分に熱放散できず、輝度の低下を招く。また、3mmより大きくなると発光素子用配線基板11の小型化が困難になる。好適には1.5mm以上が望ましく、2〜3mmが最も望ましい。この寸法にすることにより発光素子からの発熱を水平方向に良好に放散させることができる。また、金属体8の貫通方向の最大寸法は0.15mm以上が望ましい。金属体8が0.15mmより薄くなると箔状になるため、扱い時に破れや折れが発生し、金属体8として取り扱いが難しくなる。また、0.6mmより厚くなると金属体8としての剛性が高くなり、変形しにくくなるため、ロウ付け時などの絶縁基体1と金属体8との熱膨張差に起因して、両者の間に発生する応力により絶縁基体1にクラックなどが生じやすくなり、信頼性が低下する。好適には0.4mm以下が望ましく、0.15〜0.3mmが最も望ましい。この寸法にすることにより発光素子からの熱を速やかに放散すると同時に、容易に変形し、絶縁基体1と金属体8との熱膨張差に起因して、両者の間に発生する応力を緩和することが望ましい。   Further, it is desirable that the maximum dimension in the plane perpendicular to the penetrating direction of the metal body 8 is 1 mm or more, and if it is less than 1 mm, heat generated from the light emitting element cannot be sufficiently dissipated, resulting in a decrease in luminance. On the other hand, if it is larger than 3 mm, it is difficult to reduce the size of the wiring board 11 for the light emitting element. Preferably, 1.5 mm or more is desirable, and 2-3 mm is most desirable. With this size, heat generated from the light emitting element can be dissipated well in the horizontal direction. The maximum dimension of the metal body 8 in the penetration direction is preferably 0.15 mm or more. When the metal body 8 is thinner than 0.15 mm, it becomes a foil shape, and thus tears and breaks occur during handling, making it difficult to handle the metal body 8. Further, when the thickness is greater than 0.6 mm, the rigidity of the metal body 8 is increased and the metal body 8 is less likely to be deformed. Therefore, due to the difference in thermal expansion between the insulating base 1 and the metal body 8 during brazing, Cracks and the like are easily generated in the insulating substrate 1 due to the generated stress, and the reliability is lowered. Preferably, 0.4 mm or less is desirable, and 0.15 to 0.3 mm is most desirable. With this size, the heat from the light emitting element is quickly dissipated and at the same time easily deformed to relieve the stress generated between the insulating base 1 and the metal body 8 due to the difference in thermal expansion. It is desirable.

なお、金属体8の側面に段差を設ける場合には、図1のように金属体8の一方の端面と、他方の端面との大きさが異なっている必要はない。例えば、金属体8の一方の端面と、他方の端面との大きさが同じであっても、金属体8の挿入に支障のない範囲の凹凸を金属体8の側面に設けることができるのは言うまでもない。   In addition, when providing a level | step difference in the side surface of the metal body 8, the magnitude | size of the one end surface of the metal body 8 and the other end surface does not need to be different like FIG. For example, even if the size of one end surface of the metal body 8 is the same as that of the other end surface, the side surface of the metal body 8 can be provided with irregularities in a range that does not hinder the insertion of the metal body 8. Needless to say.

また、図1のように、金属体8の一方の端面を他方の端面よりも大きくすることで、金属体8を貫通孔2に挿入する際の位置決めが容易になるために、組立性が格段に向上するという利点もある。   In addition, as shown in FIG. 1, by making one end surface of the metal body 8 larger than the other end surface, positioning when inserting the metal body 8 into the through hole 2 is facilitated. There is also an advantage of improving.

さらに、搭載部9と反対側の金属体8の端面の面積を大きくすることで、熱の伝達経路が広くなり、発光素子用配線基板の放熱性がさらに向上する。特に、金属体8の一方の端面が、他方の端面の1.1倍以上の面積を有することが望ましく、更に好適には1.2倍以上とすることが望ましい。   Furthermore, by increasing the area of the end face of the metal body 8 on the side opposite to the mounting portion 9, the heat transfer path becomes wider and the heat dissipation of the light emitting element wiring board is further improved. In particular, it is desirable that one end surface of the metal body 8 has an area that is 1.1 times or more that of the other end surface, and more preferably 1.2 times or more.

このようにして、小型で絶縁基体1より高い熱伝導率を有する金属体8を設けることにより、本発明の発光素子用配線基板に搭載される発光素子から発生する熱を速やかに放散することができるため、発光素子の輝度低下を防ぐことが可能となる。   In this way, by providing the metal body 8 that is small and has a higher thermal conductivity than the insulating base 1, heat generated from the light emitting element mounted on the wiring board for light emitting element of the present invention can be quickly dissipated. Therefore, it is possible to prevent a decrease in luminance of the light emitting element.

そして、このような金属体8は、高熱伝導で、低抵抗で、比較的安価なCuやAlからなる金属板や、金属箔をプレス機などにより、所望の形状に打ち抜き加工するなどして容易に作製することができる。   Such a metal body 8 can be easily obtained by punching a metal plate made of Cu or Al, which has high thermal conductivity, low resistance, and relatively inexpensive, or a metal foil into a desired shape using a press or the like. Can be produced.

また、複雑な形状の金属体8は、プレス加工や、鋳込みや、研磨加工、粉末冶金などの手法により形成することができる。また、このほかの従来周知の加工方法を用いて金属体8を作製してもよいことは言うまでもない。   The metal body 8 having a complicated shape can be formed by a technique such as pressing, casting, polishing, powder metallurgy, or the like. Needless to say, the metal body 8 may be manufactured by using other conventionally known processing methods.

また、金属板8の素材としては、CuやAl以外にもAg、あるいは、Cu−Wなどの複合材を用いることができる。この2種以上の金属を含有するCu−Wなどの複合材を用いる場合には、用いる金属とその比率を制御することで、所望の特性を有する金属体8を作製することができる。また、金属体8が合金により形成されていてもよいのは勿論である。また、金属体8が複数の部材を組み合わせて構成されていてもよい。   Moreover, as a raw material of the metal plate 8, in addition to Cu and Al, a composite material such as Ag or Cu-W can be used. In the case of using a composite material such as Cu-W containing two or more kinds of metals, the metal body 8 having desired characteristics can be produced by controlling the metal used and its ratio. Of course, the metal body 8 may be made of an alloy. Moreover, the metal body 8 may be configured by combining a plurality of members.

なお、金属体8は、発光素子の搭載部9を平坦にするため絶縁基体1と実質的に同一厚みであることが望ましい。   In addition, it is desirable that the metal body 8 has substantially the same thickness as the insulating base 1 in order to flatten the mounting portion 9 of the light emitting element.

このような金属体8は、安価に容易に入手できるだけでなく、種々の形態の絶縁基体1に容易に取り付けることができるため、搭載される発光素子の性能に応じて、種々の形態の絶縁基体1を用い、性能とコストをふまえて最適の組み合わせとすることができる。   Such a metal body 8 can be easily obtained at low cost and can be easily attached to various forms of the insulating base 1, so that various forms of the insulating base can be used according to the performance of the mounted light emitting element. 1 can be used to achieve an optimal combination based on performance and cost.

つぎに、絶縁基体1について説明する。この発光素子用配線基板11に用いる絶縁基体1は、例えば、MgOやAlなどのセラミックス基板を好適に用いることができる。 Next, the insulating base 1 will be described. As the insulating base 1 used for the light emitting element wiring substrate 11, for example, a ceramic substrate such as MgO or Al 2 O 3 can be suitably used.

そして、絶縁基体1として、セラミック基板を用いた場合には、高剛性である点、発光素子の発する光や熱による変質がない点、比較的高熱伝導性の素材が多い点で、高性能で長寿命の発光素子用配線基板11となる。   When a ceramic substrate is used as the insulating substrate 1, it has high performance because it is highly rigid, does not change in quality due to light or heat emitted from the light emitting element, and has a relatively large number of materials with relatively high thermal conductivity. The light-emitting element wiring substrate 11 has a long life.

また、絶縁基体1として、低温焼成基板、いわゆるガラスセラミックスを用いた場合には、熱伝導率や、強度や、剛性こそAlなどの1050℃以上の温度域で焼成されるセラミックスには劣るものの、熱膨張係数を容易に制御することができるため、容易に金属体8との熱膨張係数の整合を図ることができる。また、配線層として低抵抗のCuや、Agなどを同時焼成することができるため、発光素子以外の部分の電気的な損失や発熱を抑制することができる。 In addition, when a low-temperature fired substrate, so-called glass ceramics, is used as the insulating substrate 1, the thermal conductivity, strength, and rigidity are not limited to ceramics fired in a temperature range of 1050 ° C. or higher such as Al 2 O 3. Although it is inferior, since the thermal expansion coefficient can be easily controlled, it is possible to easily match the thermal expansion coefficient with the metal body 8. Further, since low resistance Cu, Ag, or the like can be simultaneously fired as the wiring layer, electrical loss and heat generation in portions other than the light emitting element can be suppressed.

これらの絶縁基体1として用いられる素材について、以下に詳細に説明する。   The materials used as these insulating bases 1 will be described in detail below.

たとえば、絶縁基体1として、Alを主結晶相とするAl質焼結体を用いた場合には、安価な原料を使用でき、安価な発光素子用配線基板11を得ることができる。 For example, when an Al 2 O 3 sintered body having Al 2 O 3 as a main crystal phase is used as the insulating substrate 1, an inexpensive raw material can be used, and an inexpensive wiring board 11 for a light emitting element can be obtained. Can do.

なお、Alを主結晶相とするAl質焼結体とは、例えば、X線回折によって、Alのピークが主ピークとして検出されるようなもので、Alの結晶を体積比率として、50体積%以上含有していることが望ましい。 Note that the Al 2 O 3 and Al 2 O 3 quality sintered body composed mainly crystalline phase, for example, by X-ray diffraction, is like the peak of Al 2 O 3 is detected as the main peak, Al 2 It is desirable to contain 50% or more by volume of O 3 crystals.

このようなAl質焼結体は、例えば、平均粒径0.1〜8μm、望ましくは1.0〜2.0μmの純度99%以上のAl粉末に、平均粒径1.0〜2.0μmのMn、SiO、MgO、SrO、CaOの群から選ばれる少なくとも1種の焼結助剤を添加した成形体を1300〜1600℃の温度範囲で焼成することによって得られるものである。 Such an Al 2 O 3 sintered body has, for example, an average particle size of 0.1 to 8 μm, preferably 1.0 to 2.0 μm and an Al 2 O 3 powder with a purity of 99% or more and an average particle size of 1 Firing a molded body to which at least one kind of sintering aid selected from the group of Mn 2 O 3 , SiO 2 , MgO, SrO and CaO of 0 to 2.0 μm is added in a temperature range of 1300 to 1600 ° C. Is obtained.

そして、焼結助剤などのAl以外の組成物の添加量については、Alを主結晶とする緻密体を得るために、望ましくは15質量%以下、更に望ましくは、10質量%以下とすることが望ましい。特に、焼結助剤などのAl以外の組成物の添加量が15質量%以下とした場合には、得られる絶縁基体1の大部分をAl結晶により形成することができる。また、これらの焼結助剤は、焼成温度を低くするために5質量%以上、さらには7質量%以上添加することが望ましい。なお、絶縁基体1に用いるセラミックスとして、AlNやSiなどを主結晶とする焼結体を用いても良い。 And, for the addition amount of Al 2 O 3 other than the compositions, such as sintering aids, in order to obtain a dense body of the Al 2 O 3 as a main crystal, preferably 15 wt% or less, more desirably, 10 It is desirable to set it as mass% or less. In particular, when the amount of a composition other than Al 2 O 3 such as a sintering aid is set to 15% by mass or less, most of the obtained insulating substrate 1 can be formed of Al 2 O 3 crystals. . These sintering aids are desirably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature. Note that as the ceramic used for the insulating substrate 1, a sintered body having AlN, Si 3 N 4 or the like as a main crystal may be used.

このようなMgOやAlを主成分とする組成物に、さらに、バインダー、溶剤を添加して、スラリーを作製し、例えば、ドクターブレード法により、シート状の成形体を作製し、さらに、その表面や、シート状の成形体に設けた貫通孔などに、少なくとも金属粉末を含有する導体ペーストを印刷、充填したのち、このシートを積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼成することで、表面や内部に接続端子3や外部電極端子5や貫通導体7などの配線層が形成された絶縁基体1を作製することができる。また、配線層は、薄膜法により絶縁基体1の表面に形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。 To such a composition containing MgO or Al 2 O 3 as a main component, a binder and a solvent are further added to prepare a slurry. For example, a sheet-like molded body is prepared by a doctor blade method, Then, after printing and filling a conductive paste containing at least a metal powder on the surface or through holes provided in the sheet-like molded body, the sheet is laminated and then laminated in an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere. By firing, the insulating base body 1 in which wiring layers such as the connection terminals 3, the external electrode terminals 5, and the through conductors 7 are formed on the surface or inside can be manufactured. Needless to say, the wiring layer can be formed on the surface of the insulating substrate 1 by a thin film method or by transferring a metal foil onto the surface of the molded body.

なお、シート状の成形体には、焼成工程の前に、金属体8を挿入するための貫通孔2となる孔を予め形成しておく必要があるのは言うまでもない。   Needless to say, it is necessary to previously form a hole to be the through hole 2 for inserting the metal body 8 in the sheet-like molded body before the firing step.

また、絶縁基体1として、低温焼成基板を用いる場合についても、素材と焼成温度の点で異なるものの、基本的に同様の手順で、貫通孔2や配線層を備えた絶縁基体1を作製することができる。   Further, even when a low-temperature fired substrate is used as the insulating substrate 1, the insulating substrate 1 provided with the through-holes 2 and the wiring layer is basically manufactured in the same manner, although the materials and the firing temperature are different. Can do.

次に、以上説明した貫通孔2を設けた種々の絶縁基体1に対して、Cuからなる金属体8を準備し、貫通孔2内に金属体8を挿入して、金属からなる接合材10により絶縁基体1と金属体8を接合させ、発光素子用配線基板11を得ることができる。   Next, a metal body 8 made of Cu is prepared for the various insulating bases 1 provided with the through holes 2 described above, the metal body 8 is inserted into the through holes 2, and a bonding material 10 made of metal. Thus, the insulating substrate 1 and the metal body 8 can be joined together to obtain the light emitting element wiring substrate 11.

また、接続端子3および金属体8の表面にAlめっきやAgめっきを施すことにより、腐食に対する抵抗力が向上し、発光素子用配線基板11の信頼性が向上するとともに、接続端子3および金属体8の反射率を向上させることができる。   Further, by applying Al plating or Ag plating to the surfaces of the connection terminal 3 and the metal body 8, the resistance to corrosion is improved, the reliability of the wiring board 11 for the light emitting element is improved, and the connection terminal 3 and the metal body are improved. The reflectance of 8 can be improved.

このような発光素子用配線基板11の搭載部9側の主面には、枠体を設けることも可能であり、例えば、セラミックスからなる絶縁基体1を用いる場合には、枠体を、セラミックスにより形成することで、絶縁基体1と枠体とを同時焼成することができ、工程が簡略化されるため、安価な発光素子用配線基板11を容易に作製することができる。   A frame body can be provided on the main surface of the light emitting element wiring substrate 11 on the mounting portion 9 side. For example, when the insulating substrate 1 made of ceramics is used, the frame body is made of ceramics. By forming, the insulating base 1 and the frame can be fired at the same time, and the process is simplified, so that the inexpensive light emitting element wiring substrate 11 can be easily manufactured.

また、安価で、加工性に優れた金属により枠体を形成することで、複雑な形状の枠体であっても、容易に安価に製造することができ、安価な発光素子用配線基板11を供給することができる。この金属製の枠体は、例えば、AlやFe−Ni−Co合金等などにより好適に形成することができる。また、枠体の内壁面には、反射率を向上させるため、Ni、Au、Ag、Alなどからなるめっき層を形成してもよい。   Further, by forming the frame body with a metal that is inexpensive and excellent in workability, even a frame body having a complicated shape can be easily manufactured at low cost, and the inexpensive light-emitting element wiring substrate 11 can be manufactured. Can be supplied. The metal frame can be suitably formed from, for example, Al or Fe—Ni—Co alloy. Further, a plating layer made of Ni, Au, Ag, Al, or the like may be formed on the inner wall surface of the frame in order to improve the reflectance.

なお、このように枠体を金属により形成する場合には、共晶Ag−Cuロウ材等からなるロウ材を介してのろう付けや、半田による接合をすることができる。   When the frame is formed of a metal as described above, brazing via a brazing material made of a eutectic Ag—Cu brazing material or the like, or joining by soldering can be performed.

また、樹脂系の接着剤を用いてもよいことはいうまでもなく、素材としては、一般的に用いられるエポキシ樹脂系の接着剤を用いることが望ましい。   Needless to say, a resin-based adhesive may be used, and it is desirable to use a generally used epoxy resin-based adhesive as the material.

そして、以上説明した本発明の発光素子用配線基板11に、例えば、図4(a)に示すように発光素子21として、LEDチップ21などを搭載し、ボンディングワイヤ23により、発光素子21と接続端子3とを電気的に接続し、発光素子21に給電することにより、発光素子21を機能させることができ、発光素子21からの発熱を金属体8から速やかに放出することができるため、ヒートシンク等の放熱部材が不要となり、実装される電気機器の小型化に寄与できるとともに、安価な発光装置25ができる。なお、ヒートシンクを設けることで、更に放熱性が向上することはもちろんであり、例えば、ヒートシンクのような冷却装置を設けることを排除するものではない。   Then, for example, as shown in FIG. 4A, the LED chip 21 or the like is mounted as the light emitting element 21 on the wiring board 11 for the light emitting element of the present invention described above, and is connected to the light emitting element 21 by the bonding wire 23. By electrically connecting the terminal 3 and supplying power to the light emitting element 21, the light emitting element 21 can function and heat generated from the light emitting element 21 can be quickly emitted from the metal body 8. Thus, a heat emitting member such as the above can be dispensed with, which contributes to the downsizing of the electric equipment to be mounted. In addition, by providing a heat sink, it is needless to say that heat dissipation is further improved, and for example, provision of a cooling device such as a heat sink is not excluded.

また、発光素子用配線基板11に形成された搭載部9に、例えば発光素子21として、LEDチップ21などを搭載し、ボンディングワイヤ23により、LEDチップ21と接続端子3と電気的に接続して、給電することにより、発光素子21の放射する光を絶縁基体1や枠体に反射させ、所定の方向へと誘導することができるため、高効率の発光装置25となる。また、金属体8の熱伝導率が高いため、発光素子21からの発熱を速やかに放出することができ、発熱による輝度低下を抑制できる。   Further, an LED chip 21 or the like is mounted on the mounting portion 9 formed on the light emitting element wiring substrate 11 as, for example, the light emitting element 21, and the LED chip 21 and the connection terminal 3 are electrically connected by the bonding wire 23. By supplying power, the light emitted from the light emitting element 21 can be reflected by the insulating substrate 1 and the frame and guided in a predetermined direction, so that the highly efficient light emitting device 25 is obtained. In addition, since the metal body 8 has a high thermal conductivity, heat generated from the light emitting element 21 can be quickly released, and a reduction in luminance due to heat generation can be suppressed.

なお、図4(a)に示した例では、発光素子21は、接着剤29により発光素子用配線基板11に固定され、電力の供給はワイヤボンド23によりなされているが、発光素子用配線基板11との接続形態は、フリップチップ接続であってもよいことはいうまでもない。   In the example shown in FIG. 4A, the light emitting element 21 is fixed to the light emitting element wiring substrate 11 with an adhesive 29, and power is supplied by the wire bond 23. Needless to say, the connection form with the terminal 11 may be flip-chip connection.

また、発光素子21は、モールド材31により被覆されているが、モールド材31を用いずに、蓋体(図示せず)を用いて封止してもよく、また、モールド材31と蓋体とを併用してもよい。なお、蓋体としては、ガラスなどの透光性の素材を用いることが望ましい。   Moreover, although the light emitting element 21 is covered with the molding material 31, it may be sealed using a lid (not shown) without using the molding material 31, or the molding material 31 and the lid. And may be used in combination. In addition, as a cover body, it is desirable to use translucent materials, such as glass.

なお、発光素子21を搭載する場合には、必要に応じて、このモールド材31に発光素子21が放射する光を波長変換するための蛍光体(図示せず)を添加してもよい。   In addition, when mounting the light emitting element 21, you may add the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 21 radiates | emits to this molding material 31 as needed.

また、以上説明した例では、貫通導体7を設けた例について説明したが、貫通導体7を設けない場合であってもよく、また、絶縁基体1が多層に積層されている形態であってもよいことは勿論である。   In the example described above, the example in which the through conductor 7 is provided has been described. However, the through conductor 7 may not be provided, and the insulating base 1 may be laminated in multiple layers. Of course it is good.

また、以上説明した例では、全て、枠体を具備しない形態について説明しているが、枠体を設けた形態であってもよいのはいうまでもない。   Moreover, in the example demonstrated above, although all demonstrated the form which does not comprise a frame, it cannot be overemphasized that the form which provided the frame may be sufficient.

原料粉末として純度99%以上、平均粒径が1.0μmのAl粉末、純度99%以上、平均粒子径1.3μmのMn粉末、純度99%以上、平均粒径1.0μmのSiO粉末を用いて、Al粉末90質量%、Mn粉末5質量%、SiO粉末5質量%の割合で原料粉末を混合し、成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。しかる後に、ドクターブレード法にてセラミックグリーンシートを作製した。 Al 2 O 3 powder having a purity of 99% or more and an average particle size of 1.0 μm as a raw material powder, Mn 2 O 3 powder having a purity of 99% or more and an average particle size of 1.3 μm, a purity of 99% or more, an average particle size of 1. using SiO 2 powder 0 .mu.m, Al 2 O 3 powder 90 wt%, Mn 2 O 3 powder 5% by weight, mixing the raw material powder at a ratio of SiO 2 powder 5% by weight, as molding organic resin (binder) An acrylic binder and toluene were mixed as a solvent to prepare a slurry. Thereafter, a ceramic green sheet was prepared by a doctor blade method.

また、平均粒子径2μmのW、Cu粉末、平均粒径1.0μmのAlを用いて、W80質量%、Cu20質量%、Al5質量%の割合で金属粉末とアクリル系バインダとアセトンとを溶媒として混合し、導体ペーストを調製した
そして、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、貫通導体を形成するための直径が100μmのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。また、打ち抜き加工時にビアホールとともに、金属体を挿入するための貫通孔を形成した。
In addition, using W and Cu powder with an average particle diameter of 2 μm and Al 2 O 3 with an average particle diameter of 1.0 μm, W 80 mass%, Cu 20 mass%, and Al 2 O 3 5 mass% in proportions of metal powder and acrylic Binder and acetone were mixed as a solvent to prepare a conductor paste. The above ceramic green sheet was punched to form a via hole with a diameter of 100 μm for forming a through conductor. In addition, the conductor paste was filled by a screen printing method and printed and applied in the form of a wiring pattern. In addition, a through hole for inserting a metal body was formed together with a via hole during punching.

更に、貫通孔内壁と金属体側壁に介在する接合材が絶縁基体と強固に接合するように、スクリーン印刷法により、貫通孔の内壁面となるグリーンシートの打ち抜き面或いは、接合面に導体ペーストを印刷した。   Further, a conductive paste is applied to the punched surface or the bonding surface of the green sheet that becomes the inner wall surface of the through hole by screen printing so that the bonding material interposed between the inner wall of the through hole and the side wall of the metal body is firmly bonded to the insulating substrate. Printed.

このようにして作製した焼成後に厚みが0.3mmとなるグリーンシートを2枚、位置合わせし、積層圧着し、焼成後の寸法が、外形5mm×5mm×厚み0.6mmとなる積層体を作製した。なお、この積層体は、枠体を設けないものである。   Two green sheets having a thickness of 0.3 mm after firing thus prepared are aligned, laminated and pressure-bonded, and a laminate having dimensions after firing of 5 mm × 5 mm × 0.6 mm in thickness is produced. did. In addition, this laminated body does not provide a frame.

また、絶縁基体の接合面を、貫通孔の内側で金属体の接合面との距離が小さくなるようにした試料はグリーンシートの積層前に接合面となる部分を金型を用いて凸部と凹部との高さの差が50μmとなるようにした。   In addition, the sample in which the distance between the bonding surface of the insulating substrate and the bonding surface of the metal body inside the through-hole becomes small is used to form a portion that becomes the bonding surface before lamination of the green sheet as a convex portion using a mold. The height difference from the recess was set to 50 μm.

また、貫通孔と金属体の間に介在する接合材に対し、段差部の接合面のみに接合材が介在する場合と、接合面の上下いずれかの接合面近傍に接合材が介在する場合と、接合面の上下両方に接合材が介在する場合の試料を作製するに当たり、半田を用いた接合材が基板表面まで介在する場合と、接合面を含む接合面近傍のみに介在する場合の試料を作製する為に、貫通孔内壁に形成した金属層の寸法を表1に示すように変化させた。   In addition, with respect to the bonding material interposed between the through hole and the metal body, when the bonding material is interposed only in the bonding surface of the stepped portion, and when the bonding material is interposed in the vicinity of either the upper or lower bonding surface of the bonding surface When preparing a sample in the case where the bonding material is present both above and below the bonding surface, a sample in which the bonding material using solder is interposed up to the substrate surface and when the bonding material is interposed only in the vicinity of the bonding surface including the bonding surface In order to produce, the dimension of the metal layer formed in the inner wall of the through hole was changed as shown in Table 1.

以下では、図6の模式図に示すように、段差を設けた円柱状の金属体8の端面のうち直径が小さい方の直径を2mmとしL1で示す、反対の端面の直径を3mmとしL2で示す、接合面よりも上側の接合材が形成されない領域の深さをD1、接合面よりも下側の接合材が形成されない領域の深さをD2、接合面間の距離をC1、接合面同士の重なりの幅をW、金属体と絶縁基体との隙間の距離をC2とする。   In the following, as shown in the schematic diagram of FIG. 6, the diameter of the end surface of the columnar metal body 8 provided with a step is set to 2 mm, which is the smaller diameter, and is denoted by L1, and the diameter of the opposite end surface is 3 mm, L2. The depth of the region where the bonding material above the bonding surface is not formed is D1, the depth of the region where the bonding material below the bonding surface is not formed is D2, the distance between the bonding surfaces is C1, and the bonding surfaces are Let W be the width of the overlap, and C2 be the distance between the metal body and the insulating substrate.

そして、露点+25℃の窒素水素混合雰囲気にて900℃で脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300度で2時間保持して焼成した。   And after degreasing at 900 degreeC in nitrogen-hydrogen mixed atmosphere with dew point +25 degreeC, it hold | maintained at 1300 degree C for 2 hours in nitrogen-hydrogen mixed atmosphere with dew point +25 degreeC continuously, and baked.

その後、接続端子並びに外部電極端子の表面にNi、Auめっきを順次施した。   Thereafter, Ni and Au plating were sequentially applied to the surfaces of the connection terminal and the external electrode terminal.

これらの発光素子用配線基板に接着剤としてエポキシ樹脂をディスペンサーを用いて塗布し、出力1.5Wの発光素子であるLEDチップを搭載部に実装し、ボンディングワイヤによりLEDチップと接続端子とを結線し、さらに、LEDチップと接続端子とを熱膨張係数が40×10−6/℃のエポキシ樹脂からなるモールド材で覆い、発光装置を得た。 An epoxy resin as an adhesive is applied to these light emitting element wiring boards using a dispenser, an LED chip which is a light emitting element with an output of 1.5 W is mounted on the mounting portion, and the LED chip and the connection terminal are connected by a bonding wire. Further, the LED chip and the connection terminal were covered with a molding material made of an epoxy resin having a thermal expansion coefficient of 40 × 10 −6 / ° C., to obtain a light emitting device.

得られた発光装置を、−55℃〜125℃の温度サイクル試験を1000サイクル行い、試験後、金属体と絶縁基体間の接合界面の剥離状況を確認した。   The obtained light-emitting device was subjected to a temperature cycle test of −55 ° C. to 125 ° C. for 1000 cycles, and after the test, the peeling state of the bonding interface between the metal body and the insulating substrate was confirmed.

また、発光装置に0.4Aの電流を通電し、1時間後に全放射束測定を行った。   Further, a current of 0.4 A was passed through the light emitting device, and the total radiant flux was measured after 1 hour.

以上の工程により作製した発光素子用配線基板の特性と、試験結果を表1に示す。

Figure 0004789671
Table 1 shows the characteristics and test results of the light-emitting element wiring substrate manufactured through the above steps.
Figure 0004789671

表1に示すように、段差をもたない本発明の範囲外である試料No.1、2では、温度サイクル試験後に金属体と絶縁基体の接合部に接合材の剥離が見られた。また、接合面の上下の領域のいずれにも接合材が形成されていない試料No.15では、接合面積が十分に確保されず、金属体と絶縁基体の接合部に接合材の剥離が見られた。また、金属体と絶縁基体との間のすべての領域に接合材がある試料No.19でも接合材の剥離が見られ、しかも基板表裏面への接合材の染み出しが確認された。   As shown in Table 1, the sample No. which is outside the scope of the present invention having no step. In Nos. 1 and 2, peeling of the bonding material was observed at the joint between the metal body and the insulating substrate after the temperature cycle test. In addition, Sample No. in which no bonding material is formed in any of the upper and lower regions of the bonding surface. In No. 15, the bonding area was not sufficiently ensured, and peeling of the bonding material was observed at the bonding portion between the metal body and the insulating substrate. In addition, Sample No. having a bonding material in all regions between the metal body and the insulating substrate. No. 19 also showed peeling of the bonding material, and it was confirmed that the bonding material oozed out from the front and back surfaces of the substrate.

一方、発光素子用配線基板である試料No.3〜14、並びにNo.16〜18は、金属体と絶縁基体との間で剥離が確認されず、優れた接合信頼性と放熱性、光特性を有する発光素子用配線基板となった。ここで、表1における試料No.17が本発明の試料であり、試料No.3〜14、16および18は参考資料である。 On the other hand, the sample is a wiring substrate for emitting light element No. 3-14, and In Nos. 16 to 18, peeling was not confirmed between the metal body and the insulating substrate, and the wiring boards for light-emitting elements having excellent bonding reliability, heat dissipation, and optical characteristics were obtained. Here, Sample No. 17 is a sample of the present invention. Reference numerals 3 to 14, 16 and 18 are reference materials.

特に、接合面の重なり幅が、1mmを下回る試料であっても、剥離が全く確認されないことから、本発明によれば小型化も容易に行うことができる。   In particular, even if the overlapping width of the joining surfaces is less than 1 mm, no peeling is confirmed, and therefore the present invention can be easily downsized.

(a)は、接合面とその上側に接合材を設けた本発明の発光素子用配線基板の断面図であり、(b)は、接合面とその下側に接合材を設けた本発明の発光素子用配線基板の断面図である。(A) is sectional drawing of the wiring board for light emitting elements of this invention which provided the joining surface and the bonding material on the upper side, (b) is the bonding surface and the lower side of the present invention which provided the bonding material on the lower side. It is sectional drawing of the wiring board for light emitting elements. (a)は、接合面とその上下に接合材を設けた本発明の発光素子用配線基板の要部拡大図であり、(b)は、接合面とその上側に接合材を設けた本発明の発光素子用配線基板の要部拡大図であり、(c)は、接合面とその下側に接合材を設けた本発明の発光素子用配線基板の要部拡大図である。(A) is the principal part enlarged view of the wiring board for light emitting elements of this invention which provided the joining surface and the bonding material on the upper and lower sides, (b) is this invention which provided the bonding material on the bonding surface and its upper side. FIG. 2C is an enlarged view of a main part of a light emitting element wiring board of the present invention in which a bonding material and a bonding material are provided below the bonding surface. (a)、(b)は、絶縁基体の接合面に凹凸を設けた本発明の発光素子用配線基板の要部拡大図であり、(c)は、絶縁基体の接合面に傾斜を設けた本発明の発光素子用配線基板の要部拡大図である。(A), (b) is the principal part enlarged view of the wiring board for light emitting elements of this invention which provided the unevenness | corrugation in the joint surface of the insulation base, (c) provided the inclination in the joint surface of the insulation base. It is a principal part enlarged view of the wiring board for light emitting elements of this invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention. 本発明の実施例における発光素子用配線基板の形状を説明する断面図である。It is sectional drawing explaining the shape of the wiring board for light emitting elements in the Example of this invention.

符号の説明Explanation of symbols

1・・・絶縁基体
2・・・貫通孔
3・・・接続端子
5・・・外部電極端子
7・・・貫通導体
8・・・金属体
8a・・金属体の接合面
8b・・金属体の角部
9・・・搭載部
10・・接合材
11・・発光素子用配線基板
12・・金属層
12a・金属層の接合面
21・・発光素子
25・・発光装置
DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 2 ... Through-hole 3 ... Connection terminal 5 ... External electrode terminal 7 ... Through-conductor 8 ... Metal body 8a ... Metal body joint surface 8b ... Metal body Corner portion 9... Mounting portion 10 .. bonding material 11 .. wiring board 12 for light emitting element .. metal layer 12 a. Bonding surface 21 of metal layer .. light emitting element 25.

Claims (5)

平板状のセラミックスからなる絶縁基体の表面又は内部のうち少なくとも一方に導体層が形成され、前記絶縁基体の主面間を貫通する貫通孔に金属体が挿入されて接合材により前記絶縁基体と前記金属体とが接合された発光素子用配線基板であって、前記貫通孔の内壁段差を有するとともに、前記金属体の側面に、前記段差と上下に重なり合うように噛み合う段差が設けられており、前記貫通孔の段差および前記金属体の段差の上下方向に互いに向い合う接合面同士および前記貫通孔の前記接合面より上側および前記接合面より下側の少なくとも一方において、前記貫通孔の内壁と前記金属体とが、前記接合面の近傍のみで接合されており、かつ互いに向い合う前記接合面の距離が前記貫通孔の外周方向へ向けて変化していることを特徴とする発光素子用配線基板。 A conductor layer is formed on at least one of the surface and the inside of a flat ceramic substrate, and a metal body is inserted into a through-hole penetrating between the main surfaces of the insulating substrate. a wiring substrate for light-emitting element and the metal body is joined, the inner wall of the through hole having a stepped Rutotomoni, the side surface of the metal body, the step a step that mates to overlap vertically provided cage, at least one of the lower side of the upper and the joint surface from the bonding surface of the through hole of the step and the metal body step of vertically mutually opposite each other joint surfaces and between the through-hole of the prior SL through hole and characterized in that the inner wall and the metal body, wherein are joined only in the vicinity of the joint surface, and the distance of the joining surfaces facing each other is changed toward the outer circumferential direction of the through-hole Wiring board that the light emitting element. 前記絶縁基体に前記接合が接合される接合用の金属が配されてなることを特徴とする請求項1に記載の発光素子用配線基板。 The light-emitting element wiring board according to claim 1, wherein a metal layer for bonding to which the bonding material is bonded is arranged on the insulating base. 前記金属が前記絶縁基体に埋め込まれた焼結金属体であることを特徴とする請求項1または2に記載の発光素子用配線基板。 The light-emitting element wiring board according to claim 1, wherein the metal layer is a sintered metal body embedded in the insulating base. 前記接合面の幅が1mm未満であることを特徴とする請求項1乃至3のいずれかに記載の発光素子用配線基板。   The light-emitting element wiring board according to claim 1, wherein a width of the bonding surface is less than 1 mm. 請求項1乃至のいずれかに記載の発光素子用配線基板に発光素子を搭載してなることを特徴とする発光装置。 The light emitting device characterized by comprising by mounting the light emitting element to the light emitting element wiring board according to any one of claims 1 to 4.
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