JP2008109079A - Wiring board for surface mounting type light-emitting element, and light-emitting device - Google Patents

Wiring board for surface mounting type light-emitting element, and light-emitting device Download PDF

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JP2008109079A
JP2008109079A JP2007141782A JP2007141782A JP2008109079A JP 2008109079 A JP2008109079 A JP 2008109079A JP 2007141782 A JP2007141782 A JP 2007141782A JP 2007141782 A JP2007141782 A JP 2007141782A JP 2008109079 A JP2008109079 A JP 2008109079A
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emitting element
light emitting
wiring board
metal body
insulating base
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Minako Izumi
美奈子 泉
Tomohide Hasegawa
智英 長谷川
Yasuhiro Sasaki
康博 佐々木
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Kyocera Corp
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Kyocera Corp
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Priority to JP2007141782A priority Critical patent/JP2008109079A/en
Priority to PCT/JP2007/068291 priority patent/WO2008038574A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board for a surface mounting type light emitting element, along with a light emitting device using the same, of high flexibility in design, being possible to miniaturize, having excellent heat dissipation characteristics. <P>SOLUTION: In a wiring board 11 for a surface mounting type light emitting element, a metal body 5 is arranged in a bottomed hole 3 provided on a flat ceramic insulating base body 1. The metal body 5 and an external connection terminal 13 for mounting the wiring board 11 on an external wiring board are so arranged as vertically stacked in thickness direction at least at a part. So, flexibility in design is high, miniaturizing is possible, and heat dissipation characteristics is excellent. A light emitting device 29 which uses the wiring board 11 can be presented. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、例えば、発光ダイオード等の発光素子を搭載するための表面実装型発光素子用配線基板および発光装置に関する。   The present invention relates to a surface mount type light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、LED素子を用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などよりも発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も30mA程度と非常に小さいものであった(例えば、特許文献1を参照)。   Conventionally, a light-emitting device using an LED element has been used for various applications because it has a very high luminous efficiency and a small amount of heat is generated with light emission as compared with an incandescent bulb. However, since it emits less light than incandescent bulbs and fluorescent lamps, it is not used for illumination but as a light source for display, and the energization amount is as small as about 30 mA (for example, see Patent Document 1). reference).

近年では、発光素子を用いた発光装置の高輝度、白色化に伴い、携帯電話や大型液晶ディスプレイ等のバックライトに発光装置が多く用いられてきている。しかしながら、発光素子の輝度が向上するとともに、発光装置から発生する熱も増加している。発光素子の輝度の低下を防止するためには、高い熱放散性を有する発光素子用配線基板が必要となっている(例えば、特許文献2を参照)。   In recent years, with the increase in brightness and whiteness of light-emitting devices using light-emitting elements, light-emitting devices have been frequently used for backlights such as mobile phones and large liquid crystal displays. However, the luminance of the light emitting element is improved and the heat generated from the light emitting device is also increasing. In order to prevent a decrease in luminance of the light emitting element, a wiring board for a light emitting element having high heat dissipation is required (for example, see Patent Document 2).

このように、発光素子用配線基板において、放熱性は大きな課題となっている。ところで、半導体素子の上側にヒートシンクを設けたり(例えば、特許文献3を参照)、半導体素子の下側にヒートシンクを設けたり(例えば、特許文献4を参照)する従来の一般的な半導体素子を実装する配線基板の放熱構造を、単純にLED素子を実装する発光素子用配線基板に適用することは以下に挙げる理由により容易ではない。   Thus, in the wiring board for light emitting elements, heat dissipation is a major issue. By the way, the conventional general semiconductor element which mounts a heat sink on the upper side of a semiconductor element (for example, refer patent document 3), or provides a heat sink on the lower side of a semiconductor element (for example, refer patent document 4) is mounted. It is not easy to apply the heat dissipation structure of a wiring board to be applied to a wiring board for a light emitting element on which an LED element is simply mounted for the following reasons.

例えば、LED素子は1mm角以下と非常に小さく、そのため素子を実装する発光素子用配線基板も小さいこと、そして、高輝度のLED装置は、携帯電話や液晶ディスプレイのバックライトなどさまざまな機器に搭載されることから、実装方法として利便性のある表面実装が用いられることが挙げられる。   For example, the LED element is very small, 1 mm square or less, so the light-emitting element wiring board on which the element is mounted is also small, and the high-brightness LED device is mounted on various devices such as mobile phones and backlights of liquid crystal displays. Therefore, convenient surface mounting is used as a mounting method.

このような理由により、表面実装型の発光素子用配線基板においては、素子からの熱をプリント基板等の2次実装基板側に逃がすため、専ら発光素子用配線基板を貫通するように放熱体が設けられている(例えば、特許文献5を参照)。   For this reason, in the surface mount type light emitting element wiring board, heat from the element is released to the side of the secondary mounting board such as a printed circuit board. (For example, refer to Patent Document 5).

そして、発光素子用配線基板の放熱性を改善する手段として、発光素子用配線基板に貫通金属体を設け、貫通金属体上に発光素子を搭載する例が提案されている(例えば、特許文献6を参照)。
特開2002−134790号公報 特開2004−111937号公報 特開平8−222668号公報 特開平7−254668号公報 特開2003−318448号公報 特開2006−93565号公報
As a means for improving the heat dissipation of the light emitting element wiring board, an example in which a through metal body is provided on the light emitting element wiring board and the light emitting element is mounted on the through metal body has been proposed (for example, Patent Document 6). See).
JP 2002-134790 A JP 2004-111937 A JP-A-8-222668 JP-A-7-254668 JP 2003-318448 A JP 2006-93565 A

しかしながら、特許文献6の方法では、貫通金属体を設けることで放熱性を向上させることはできるものの、設計の自由度が著しく減少するという問題がある。すなわち、貫通金属体を電気回路として用いない場合には、貫通金属体が露出した部分には端子を設けることができないから、貫通金属体をさけて端子を作製する必要がある。発光素子側の端子は小さくても十分に機能するため、特に問題はないが、外部基板との接続端子が設けられた側では、両者の接続部から放熱する必要もあり、外部電極端子の面積を大きくすることが求められている。そのため、貫通金属体と大きな外部電極端子を備えた発光素子用配線基板を作製すると必然的に発光素子用配線基板が大きくなるという問題があった。   However, although the method of Patent Document 6 can improve heat dissipation by providing a through metal body, there is a problem that the degree of freedom in design is significantly reduced. That is, when the through metal body is not used as an electric circuit, a terminal cannot be provided in a portion where the through metal body is exposed. Therefore, it is necessary to prepare the terminal by avoiding the through metal body. There is no particular problem because the terminal on the light-emitting element side functions sufficiently even if it is small, but on the side where the connection terminal with the external board is provided, it is necessary to radiate heat from the connection part of both, and the area of the external electrode terminal Is required to be increased. Therefore, when a light-emitting element wiring board having a through metal body and a large external electrode terminal is manufactured, there is a problem that the light-emitting element wiring board is necessarily enlarged.

また、表面実装型の発光素子用配線基板においては、ヒートシンクを表裏面に設けることもままならないために、ますます、増加する発熱に対応することが困難であった。   Further, in the surface mount type light emitting element wiring board, it is difficult to cope with the increasing heat generation because the heat sinks are not always provided on the front and back surfaces.

本発明は、設計の自由度が高く、小型化が可能で、熱放熱性に優れた表面実装型発光素子用配線基板およびそれを用いた発光装置を提供することを目的とする。   An object of the present invention is to provide a wiring board for a surface-mounted light-emitting element that has a high degree of design freedom, can be reduced in size, and is excellent in heat dissipation, and a light-emitting device using the same.

本発明の表面実装型発光素子用配線基板は、上面に開口を有する有底穴を備えたセラミックスからなる絶縁基体と、上面に発光素子を搭載する搭載部を備え、前記有底穴に配置された金属体と、前記絶縁基体の上面に形成された接続電極と、前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端子とを備えており、前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されていることを特徴とする。なお、前記接続電極と前記外部接続端子とは、絶縁基体の内部に形成された内部配線によって電気的に接続されていてもよく、絶縁基体の側壁に形成された外部配線によって電気的に接続されていてもよい。   A wiring board for a surface-mounted light-emitting element according to the present invention includes an insulating base made of ceramics having a bottomed hole having an opening on the upper surface, and a mounting portion for mounting the light-emitting element on the upper surface, and is disposed in the bottomed hole. A metal body, a connection electrode formed on the upper surface of the insulating base, and an external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode, the metal body and the The external connection terminal is characterized in that at least a part of the external connection terminal is vertically overlapped. The connection electrode and the external connection terminal may be electrically connected by an internal wiring formed inside the insulating base, or electrically connected by an external wiring formed on the side wall of the insulating base. It may be.

また本発明の表面実装型発光素子用配線基板は、上面に発光素子を搭載する搭載部を有する絶縁基体と、前記搭載部の直下の前記絶縁基体の内部に埋設された金属体と、前記絶縁基体の上面に形成された接続電極と、前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端子とを備えており、前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されていることを特徴とする。ここで、前記搭載部に独立した金属膜が形成されているかまたは前記接続電極が延出していることが望ましい。   The wiring board for a surface-mounted light-emitting element according to the present invention includes an insulating base having a mounting portion for mounting the light-emitting element on the upper surface, a metal body embedded in the insulating base immediately below the mounting portion, and the insulating A connection electrode formed on the upper surface of the substrate; and an external connection terminal formed on the lower surface of the insulating substrate and electrically connected to the connection electrode, wherein the metal body and the external connection terminal are at least one. The parts are arranged so as to overlap each other. Here, it is preferable that an independent metal film is formed on the mounting portion or the connection electrode extends.

また、上記本発明の表面実装型発光素子用配線基板は、前記セラミックスの熱伝導率が15W/(m・K)以上、前記金属体と前記外部接続端子との間の前記絶縁基体の厚みが50〜200μmであり、前記金属体の下面の30%以上が前記外部接続端子と上下に重なって配置されていることが望ましい。   Further, in the wiring board for surface-mounted light-emitting element according to the present invention, the ceramic has a thermal conductivity of 15 W / (m · K) or more, and the thickness of the insulating base between the metal body and the external connection terminal is the same. It is desirable that the thickness is 50 to 200 μm, and 30% or more of the lower surface of the metal body is disposed so as to overlap with the external connection terminal.

本発明の発光装置は、以上説明した表面実装型発光素子用配線基板の前記搭載部に発光素子を搭載してなることを特徴とする。   The light emitting device of the present invention is characterized in that a light emitting element is mounted on the mounting portion of the wiring board for a surface mount type light emitting element described above.

本発明の表面実装型発光素子用配線基板は、金属体が絶縁基体に形成された有底穴に配置されていることから、前記金属体がヒートシンクの役割を果たし、発光素子が発生させる熱を金属体、絶縁基体および外部接続端子を経て外部基板に放出することができ、発光素子が過剰に加熱されることを防止できる。そのため、輝度低下防止あるいは、さらなる高輝度化が可能となる。   In the wiring board for a surface-mounted light-emitting element according to the present invention, the metal body is disposed in the bottomed hole formed in the insulating base, so that the metal body serves as a heat sink and generates heat generated by the light-emitting element. The light can be discharged to the external substrate through the metal body, the insulating base, and the external connection terminal, and the light emitting element can be prevented from being excessively heated. For this reason, it is possible to prevent the luminance from being lowered or to further increase the luminance.

そして、金属体と外部接続端子との間に絶縁基体が介在するため、金属体が表面実装型発光素子用配線基板の下面に露出することがなくなり、外部接続端子を自由に設計することができるため、表面実装型発光素子用配線基板の小型化に寄与し、接続信頼性や実装信頼性を考慮した配線設計を行うこともできる。   Since the insulating base is interposed between the metal body and the external connection terminal, the metal body is not exposed on the lower surface of the surface mount type light emitting element wiring board, and the external connection terminal can be freely designed. Therefore, it contributes to the miniaturization of the surface mounting type light emitting element wiring board, and the wiring design considering the connection reliability and the mounting reliability can also be performed.

そして、金属体と外部接続端子とを少なくとも一部が表面実装型発光素子用配線基板の厚み方向で絶縁基体を介在させて上下に重ねて配置することで、発光素子が発生させる熱の前記金属体から系外へと放出される経路を短く形成することができ、発光素子の過度の温度上昇を抑制することができる。   The metal body and the external connection terminal are arranged so that at least part of the metal body and the external connection terminal are vertically stacked with an insulating base interposed in the thickness direction of the surface mount type light emitting element wiring board, whereby the heat generated by the light emitting element is generated. A path from the body to the outside of the system can be formed short, and an excessive temperature rise of the light emitting element can be suppressed.

さらに、本発明の表面実装型発光素子用配線基板は、金属体が絶縁基体の内部に埋設され、金属体が絶縁基体の上面に露出しない場合には、接続電極や実装部品の配置を自由に設計することができるため、表面実装型発光素子用配線基板の小型化に寄与することができる。   Further, the surface mount type light emitting device wiring board of the present invention can freely arrange the connection electrodes and mounting components when the metal body is embedded in the insulating base and the metal body is not exposed on the top surface of the insulating base. Since it can design, it can contribute to size reduction of the wiring board for surface mount type light emitting elements.

また、絶縁基体の上面に形成される接続電極としては、電位差の加わる接続電極が一対あって、フリップチップ型(フェースダウン構造)の発光素子を実装して発光素子の電極端子をそれぞれの接続電極に接続させるとした場合に金属体が絶縁基体の上面に露出していると、この電位差の加わる一対の接続電極を電気的に接続させてしまうこととなる。これに対し、金属体が絶縁基体の上面に露出しない場合には、フリップチップ型(フェースダウン構造)の発光素子を実装したとしても、一対の接続電極を電気的に接続させることなく金属体を配置でき、十分な放熱効果を得ることができる。   In addition, as a connection electrode formed on the upper surface of the insulating substrate, there is a pair of connection electrodes to which a potential difference is applied. A flip-chip (face-down structure) light-emitting element is mounted, and the electrode terminal of the light-emitting element is connected to each connection electrode. When the metal body is exposed on the upper surface of the insulating base when it is connected to the pair, the pair of connection electrodes to which this potential difference is applied are electrically connected. On the other hand, when the metal body is not exposed on the upper surface of the insulating base, the metal body is not electrically connected to the pair of connection electrodes even if a flip chip type (face-down structure) light emitting element is mounted. It can arrange | position and can acquire sufficient heat dissipation effect.

そして、金属体と接続電極との間に絶縁基体が介在する場合であり、かつ搭載部に独立した金属膜が形成されているかまたは接続電極が延出している場合には、発光素子の実装時に熱伝導性の高い材料を用いて発光素子と搭載部とを接合することができる。例えば、搭載部にAuめっきが施された金属膜が形成されている場合、AuSn接合により発光素子を実装することで、高い放熱効果を得ることができる。また、搭載部に独立した金属膜が形成されているかまたは接続電極が延出していることで、光が搭載部で反射されるため光の取り出し効率の向上につながるという効果も得られる。例えば、表面に反射率の高いAgめっきが施されている場合には、光の取り出し効率を向上させることができる。   When an insulating substrate is interposed between the metal body and the connection electrode, and an independent metal film is formed on the mounting portion or the connection electrode extends, the light emitting element is mounted. The light emitting element and the mounting portion can be bonded using a material having high thermal conductivity. For example, when a metal film plated with Au is formed on the mounting portion, a high heat dissipation effect can be obtained by mounting the light emitting element by AuSn bonding. In addition, since an independent metal film is formed on the mounting portion or the connection electrode extends, light is reflected by the mounting portion, so that an effect of improving light extraction efficiency can be obtained. For example, when Ag plating with high reflectance is applied to the surface, the light extraction efficiency can be improved.

またさらに、本発明の表面実装型発光素子用配線基板は、絶縁基体を形成するセラミックスの熱伝導率が15W/(m・K)以上、金属体と外部接続端子との間の絶縁基体の厚みが50〜200μmであり、金属体の下面の30%以上が外部接続端子と上下に重なって配置されていることで、熱伝導を妨げる絶縁層の影響が少なく、さらに高い放熱効果を実現することができる。   Furthermore, the surface mount type light emitting element wiring board of the present invention has a thermal conductivity of 15 W / (m · K) or more of the ceramic forming the insulating base, and the thickness of the insulating base between the metal body and the external connection terminal. 50% to 200 μm, and 30% or more of the lower surface of the metal body is arranged so as to overlap the upper and lower external connection terminals, so that there is little influence of the insulating layer that hinders heat conduction, and a higher heat dissipation effect is realized. Can do.

以上説明した本発明の表面実装型発光素子用配線基板の搭載部に発光素子を搭載した本発明の発光装置によれば、金属体と外部接続端子を用いて発光素子からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制でき、しかも外部接続端子の設計の自由度が高いため、小型化を実現することができる。   According to the light-emitting device of the present invention in which the light-emitting element is mounted on the mounting portion of the wiring board for the surface-mounted light-emitting element of the present invention described above, the device can quickly generate heat from the light-emitting element using the metal body and the external connection terminal. Since it can be discharged to the outside, a decrease in luminance due to heat generation can be suppressed, and the degree of freedom in designing the external connection terminal is high, so that downsizing can be realized.

本発明の表面実装型発光素子用配線基板は、例えば、図1(a)に示すように、セラミックスからなる平板状の絶縁基体1と、この絶縁基体1に形成された有底穴3を備えている。この有底穴3には金属体5が配置され、この金属体5の上側に発光素子を搭載する搭載部7が形成されている。   For example, as shown in FIG. 1A, the surface-mount light-emitting element wiring board of the present invention includes a flat insulating base 1 made of ceramics and a bottomed hole 3 formed in the insulating base 1. ing. A metal body 5 is disposed in the bottomed hole 3, and a mounting portion 7 for mounting a light emitting element is formed above the metal body 5.

さらに、絶縁基体1の上面1aには搭載部7に搭載される発光素子の電極と電気的に接続される接続電極9が配置され、絶縁基体1の下面1bには、本発明の表面実装型発光素子用配線基板11を外部配線基板等に電気的に接続するための外部接続端子13が配置されている。   Further, a connection electrode 9 electrically connected to the electrode of the light emitting element mounted on the mounting portion 7 is disposed on the upper surface 1a of the insulating substrate 1, and the surface mounting type of the present invention is disposed on the lower surface 1b of the insulating substrate 1. External connection terminals 13 for electrically connecting the light emitting element wiring board 11 to an external wiring board or the like are arranged.

また、接続電極9と外部接続端子13とを電気的に接続する内部配線15が絶縁基体1の内部に絶縁基体1を貫通するように配置されている。そして、本発明の表面実装型発光素子用配線基板11においては、金属体5と外部接続端子13とが少なくとも一部で上下方向で重なって配置されていることが重要である。   In addition, an internal wiring 15 that electrically connects the connection electrode 9 and the external connection terminal 13 is disposed inside the insulating base 1 so as to penetrate the insulating base 1. In the surface mount type light emitting element wiring substrate 11 of the present invention, it is important that the metal body 5 and the external connection terminal 13 are arranged so as to overlap at least partially in the vertical direction.

すなわち、金属体5が絶縁基体1の搭載部7の下の有底穴3に埋設されることにより、本発明の表面実装型発光素子用配線基板11に搭載される発光素子から発生した熱を速やかに金属体5に伝達させることで発光素子の温度が過剰に上昇することを防ぎ、発光素子の輝度低下を抑制し、さらには高輝度化を実現することができる。   That is, when the metal body 5 is embedded in the bottomed hole 3 under the mounting portion 7 of the insulating base 1, heat generated from the light emitting element mounted on the surface mount type light emitting element wiring board 11 of the present invention is generated. By promptly transmitting the light to the metal body 5, it is possible to prevent the temperature of the light emitting element from rising excessively, suppress a decrease in luminance of the light emitting element, and realize higher luminance.

また、金属体5が有底穴3に配置されることにより、表面実装型発光素子用配線基板11の下面1bに金属体5が露出することがなくなるため、外部接続端子13の配線設計の自由度が高くなり、表面実装型発光素子用配線基板11の小型化が可能となる。また、実装信頼性に考慮した設計も容易となる。さらに、金属体5と外部接続端子13とが表面実装型発光素子用配線基板11の厚み方向で上下に重なって配置されている、換言すれば、外部接続端子13の一部が上から見て金属体5と重なっていることから、発光素子から発生し、熱伝導率の高い金属体5に伝達された熱が熱伝導率の高い外部接続端子13を通って系外へ放出されるため、発光素子の過度な発熱を防止することが可能となる。   Further, since the metal body 5 is disposed in the bottomed hole 3, the metal body 5 is not exposed to the lower surface 1 b of the surface mounting type light emitting element wiring substrate 11, so that the wiring design of the external connection terminal 13 is free. Thus, the surface mount type light emitting element wiring substrate 11 can be downsized. In addition, it is easy to design in consideration of mounting reliability. Further, the metal body 5 and the external connection terminal 13 are arranged so as to overlap each other in the thickness direction of the surface mount type light emitting element wiring substrate 11, in other words, a part of the external connection terminal 13 is seen from above. Since it overlaps with the metal body 5, heat generated from the light emitting element and transferred to the metal body 5 with high thermal conductivity is released outside the system through the external connection terminal 13 with high thermal conductivity. It is possible to prevent excessive heat generation of the light emitting element.

また、本発明の表面実装型発光素子用配線基板11においては外部接続端子13が絶縁基体1の下面1bに占める割合が面積比率で45%以上であることが望ましい。すなわち、外部接続端子13が大きな面積を占めることにより、表面実装型発光素子用配線基板11において高い放熱性を実現することができ、同時に接続信頼性や実装信頼性を考慮した配線設計を行うことも可能である。この外部接続端子13の面積比率は、特に60%以上であることが望ましい。   In the surface mount type light emitting element wiring substrate 11 of the present invention, it is desirable that the ratio of the external connection terminals 13 to the lower surface 1b of the insulating base 1 is 45% or more in terms of area ratio. That is, since the external connection terminals 13 occupy a large area, it is possible to achieve high heat dissipation in the surface mounting type light emitting element wiring substrate 11 and at the same time, perform wiring design considering connection reliability and mounting reliability. Is also possible. The area ratio of the external connection terminals 13 is particularly preferably 60% or more.

また、金属体5の下面の30%以上、さらには45%以上、特に65%以上が外部接続端子13と上下に重なって配置されていることが望ましい。このように金属体5と外部接続端子13の重なりを大きくすることにより、より一層表面実装型発光素子用配線基板11の放熱効果を高めることができる。   Further, it is desirable that 30% or more, further 45% or more, particularly 65% or more of the lower surface of the metal body 5 is disposed so as to overlap the external connection terminal 13 vertically. Thus, by increasing the overlap between the metal body 5 and the external connection terminal 13, the heat dissipation effect of the surface mount type light emitting element wiring substrate 11 can be further enhanced.

また、金属体5と外部接続端子13との間の絶縁基体1の厚みが50〜200μmであることが望ましい。この厚みを50μm以上とすることによって金属体5と外部接続端子13との絶縁信頼性を確保することができ、また200μm以下にすることによって金属体5から外部接続端子13の距離を短くすることができるため、放熱経路を短くすることができる。そのため、金属体5と外部接続端子13との間の絶縁基体1の厚みは特に60〜150μm、さらに好適には80〜100μmであることが望ましい。   Moreover, it is desirable that the thickness of the insulating base 1 between the metal body 5 and the external connection terminal 13 is 50 to 200 μm. The insulation reliability between the metal body 5 and the external connection terminal 13 can be secured by setting the thickness to 50 μm or more, and the distance from the metal body 5 to the external connection terminal 13 can be shortened by setting the thickness to 200 μm or less. Therefore, the heat radiation path can be shortened. Therefore, the thickness of the insulating substrate 1 between the metal body 5 and the external connection terminal 13 is particularly preferably 60 to 150 μm, and more preferably 80 to 100 μm.

また、絶縁基体1として、15W/(m・K)以上の熱伝導率を有する材料を用いることが望ましい。これにより、表面実装型発光素子用配線基板11の放熱性をさらに高めることができる。   Further, as the insulating substrate 1, it is desirable to use a material having a thermal conductivity of 15 W / (m · K) or more. Thereby, the heat dissipation of the surface mount type light emitting element wiring substrate 11 can be further enhanced.

本発明の表面実装型発光素子用配線基板11においては、これらの要件を総合的に備えた場合、すなわち、絶縁基体1を形成するセラミックスの熱伝導率が15W/(m・K)以上、金属体5と外部接続端子13との間の絶縁基体1の厚みが50〜200μmであり、金属体5の下面の30%以上が外部接続端子13と上下に重なって配置されている場合に、特に優れた放熱効果を発揮する。   In the surface mount type light emitting element wiring substrate 11 of the present invention, when these requirements are comprehensively provided, that is, the thermal conductivity of the ceramic forming the insulating substrate 1 is 15 W / (m · K) or more, metal Especially when the thickness of the insulating substrate 1 between the body 5 and the external connection terminal 13 is 50 to 200 μm, and 30% or more of the lower surface of the metal body 5 is arranged to overlap the external connection terminal 13 vertically. Excellent heat dissipation effect.

この絶縁基体1として、Alを主結晶相とするAl質焼結体を用いた場合には、安価な原料を使用でき、安価な表面実装型発光素子用配線基板11を得ることができる。 In the case where an Al 2 O 3 sintered body having Al 2 O 3 as a main crystal phase is used as the insulating base 1, an inexpensive raw material can be used, and an inexpensive surface mount type light emitting element wiring substrate 11 is provided. Obtainable.

なお、Alを主結晶相とするAl質焼結体とは、例えば、X線回折によって、Alのピークが主ピークとして検出されるようなもので、Alの結晶を体積比率として、50体積%以上含有していることが望ましい。 Note that the Al 2 O 3 and Al 2 O 3 quality sintered body composed mainly crystalline phase, for example, by X-ray diffraction, is like the peak of Al 2 O 3 is detected as the main peak, Al 2 It is desirable to contain 50 volume% or more of O 3 crystals as a volume ratio.

また、このような焼結体は、例えば、平均粒径1.0〜2.0μmの純度99%以上のAl粉末に、平均粒径1.0〜2.0μmのMn、SiO、MgO、CaO、SrOの群から選ばれる少なくとも1種の焼結助剤を添加した成形体を1300〜1600℃の温度範囲で焼成することによって得られるものである。 Moreover, such a sintered compact is made of, for example, Al 2 O 3 powder having an average particle diameter of 1.0 to 2.0 μm and a purity of 99% or more, and Mn 2 O 3 having an average particle diameter of 1.0 to 2.0 μm. , SiO 2 , MgO, CaO, SrO, a molded body to which at least one kind of sintering aid is added is obtained by firing in a temperature range of 1300 to 1600 ° C.

そして、焼結助剤などのAl以外の組成物の添加量については、Alを主結晶とする緻密体を得るために、望ましくは15質量%以下、更に望ましくは、10質量%以下とすることが望ましい。特に、焼結助剤などのAl以外の組成物の添加量が15質量%以下とした場合には、得られる絶縁基体1の大部分をAl結晶により形成することができる。また、これらの焼結助剤は、焼成温度を低くするために5質量%以上、さらには7質量%以上添加することが望ましい。 And, for the addition amount of Al 2 O 3 other than the compositions, such as sintering aids, in order to obtain a dense body of the Al 2 O 3 as a main crystal, preferably 15 wt% or less, more desirably, 10 It is desirable to set it as the mass% or less. In particular, when the amount of a composition other than Al 2 O 3 such as a sintering aid is set to 15% by mass or less, most of the obtained insulating substrate 1 can be formed of Al 2 O 3 crystals. . These sintering aids are preferably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature.

なお、絶縁基体1に用いるセラミックスとして、ガラスセラミックス、酸化マグネシウム、酸化ジルコニウム、窒化アルミニウム、窒化珪素、ムライト、コーディエライトなどを主結晶とする焼結体を用いても良い。   As the ceramic used for the insulating substrate 1, a sintered body having a main crystal of glass ceramics, magnesium oxide, zirconium oxide, aluminum nitride, silicon nitride, mullite, cordierite, or the like may be used.

また、金属体5として、絶縁基体1よりも熱伝導率の高い材料を用いることが望ましく、金属体5の熱伝導率は、特に、150W/(m・K)以上であることが望ましい。これにより、金属体5のヒートシンクとしての効果をさらに高め、高い放熱性を得ることができる。具体的には、Cu、Cu−W、Ag、Al、W、Moなどを用いることができる。   In addition, it is desirable to use a material having higher thermal conductivity than the insulating base 1 as the metal body 5, and the thermal conductivity of the metal body 5 is particularly preferably 150 W / (m · K) or more. Thereby, the effect as a heat sink of the metal body 5 can further be improved, and high heat dissipation can be obtained. Specifically, Cu, Cu—W, Ag, Al, W, Mo, or the like can be used.

そして、金属体5の構造は直方体形状、円柱形状、さらには多段形状であってもよい。金属体5が直方体形状の場合、金属体5の体積を最大限に大きくすることができ、高い放熱性を実現する。円柱形上の場合、応力集中を防ぎ、高信頼性を持たせることができる。多段形状の場合、絶縁基体1との接触面積が大きいため、絶縁基体1との接合信頼性を高くすることができる。   The structure of the metal body 5 may be a rectangular parallelepiped shape, a cylindrical shape, or a multistage shape. When the metal body 5 is a rectangular parallelepiped shape, the volume of the metal body 5 can be maximized, and high heat dissipation is realized. In the case of a cylindrical shape, stress concentration can be prevented and high reliability can be obtained. In the case of a multi-stage shape, since the contact area with the insulating substrate 1 is large, the reliability of bonding with the insulating substrate 1 can be increased.

また、金属体5を覆うように、絶縁基体1の上面1aと平行にカバーランドを設けてもよい。カバーランドによって金属体5と絶縁基体1の界面の応力が緩和され、高い信頼性を得ることが可能となる。   Further, a cover land may be provided in parallel with the upper surface 1 a of the insulating base 1 so as to cover the metal body 5. The stress at the interface between the metal body 5 and the insulating substrate 1 is relieved by the cover land, and high reliability can be obtained.

また、図1(b)に示すように、搭載部7に搭載される発光素子からの光を誘導するため、あるいは発光素子を保護するために、絶縁基体1の上面1aに枠体17を設けてもよい。この枠体17により、発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に配置することができる。また、枠体17により発光素子の発する光を反射させて所定の方向に誘導することもできる。枠体17の内壁面17aは、絶縁基体1の上面1aに対して垂直であっても良いし、傾斜していても良い。枠体17の内壁面17aが外部に向かって傾斜している場合は、光の取り出し効率がさらに上昇する。   Further, as shown in FIG. 1B, a frame 17 is provided on the upper surface 1a of the insulating base 1 in order to induce light from the light emitting element mounted on the mounting portion 7 or to protect the light emitting element. May be. The frame body 17 can protect the light emitting element and can easily arrange a phosphor or the like around the light emitting element. Moreover, the light emitted from the light emitting element can be reflected by the frame body 17 and guided in a predetermined direction. The inner wall surface 17a of the frame body 17 may be perpendicular to the upper surface 1a of the insulating substrate 1 or may be inclined. When the inner wall surface 17a of the frame 17 is inclined toward the outside, the light extraction efficiency is further increased.

枠体17は、セラミックスでも金属でもよく、絶縁基体1と同じ材料を用いた場合は、絶縁基体1との高い信頼性を得られ、高熱伝道材料や高反射率材料のセラミックスまたは金属を用いることにより、より高い放熱性や光取り出し効率を得ることができる。   The frame 17 may be ceramics or metal, and when the same material as the insulating base 1 is used, high reliability with the insulating base 1 can be obtained, and ceramic or metal of high heat transfer material or high reflectivity material is used. Thus, higher heat dissipation and light extraction efficiency can be obtained.

次に、本発明における表面実装型発光素子用配線基板11の製造方法について具体的に説明する。まず、以下に説明するように、セラミックグリーンシート、金属シート、および導体ペーストを作製する。   Next, the manufacturing method of the surface mount type light emitting element wiring board 11 in the present invention will be specifically described. First, as described below, a ceramic green sheet, a metal sheet, and a conductor paste are prepared.

セラミックグリーンシートは、セラミック粉末と樹脂と溶剤とを所定の割合で混合して調整したセラミックスラリーから、従来周知のドクターブレード法などによりシート上に形成する。また、金属シートも、金属粉末、樹脂および溶剤などから形成される金属スラリーからドクターブレード法などによりシート状に形成する。なお、金属スラリーには必要に応じてセラミック粉末を含有させてもよい。セラミックグリーンシート並びに金属シートに用いるセラミック粉末、金属粉末の粒径は平均粒径で0.01〜10μm程度のものが好適に用いられ、特に、1〜5μmの範囲の粉末が取り扱いや焼結性に優れている。   The ceramic green sheet is formed on a sheet from a ceramic slurry prepared by mixing ceramic powder, a resin, and a solvent at a predetermined ratio by a conventionally known doctor blade method or the like. The metal sheet is also formed into a sheet shape by a doctor blade method or the like from a metal slurry formed from a metal powder, a resin, a solvent, and the like. The metal slurry may contain ceramic powder as necessary. The ceramic powder used for the ceramic green sheet and the metal sheet, and the particle diameter of the metal powder having an average particle diameter of about 0.01 to 10 [mu] m are preferably used, and in particular, powder in the range of 1 to 5 [mu] m is handled and sintered. Is excellent.

また、望ましくはCu、Ag、W、Moのうち少なくとも1種を主成分とする導体ペーストを作製する。これらの金属を用いることで、絶縁基体1と同時焼成して、接続電極9、外部接続端子13および内部配線15を形成することが可能となり、安価な表面実装型発光素子用配線基板11を得ることができる。導体ペーストは金属粉末、樹脂および溶剤を所定の割合で混合し、溶剤を減圧過熱等によって除くことにより作製される。必要に応じてセラミック粉末を含有させてもよい。導体ペーストに用いる金属粉末、セラミック粉末の粒径は平均粒径で0.01〜10μm程度のものが好適に用いられ、特に、1〜5μmの範囲の粉末が取り扱いや焼結性に優れている。   Desirably, a conductor paste containing at least one of Cu, Ag, W, and Mo as a main component is prepared. By using these metals, it is possible to form the connection electrode 9, the external connection terminal 13 and the internal wiring 15 by simultaneous firing with the insulating base 1, and to obtain an inexpensive surface mount type light emitting element wiring substrate 11. be able to. The conductor paste is produced by mixing metal powder, resin and solvent at a predetermined ratio and removing the solvent by heating under reduced pressure or the like. Ceramic powder may be included as necessary. The average particle size of the metal powder and ceramic powder used for the conductor paste is preferably about 0.01 to 10 μm. Particularly, the powder in the range of 1 to 5 μm is excellent in handling and sinterability. .

セラミックグリーンシートにマイクロドリルやレーザー等によりビアホールを形成し、印刷等の方法でこのビアホールに導体ペーストを充填し、また、セラミックグリーンシート表面に導体ペーストを印刷して配線を形成する。そして、セラミックグリーンシートの所定箇所に貫通穴を形成した後、貫通穴を形成したセラミックグリーンシートに金属シートを積層し、セラミックグリーンシートにおける貫通穴形成部分を金属シート側から押圧することによって、金属シートの一部を貫通穴内に埋め込み、セラミックグリーンシートと金属シートとを一体化する。なお、このときセラミックグリーンシートと金属シートは略同一厚みであることが望ましい。   A via hole is formed on the ceramic green sheet by a micro drill, a laser, or the like, and the via hole is filled with a conductor paste by a method such as printing, and the conductor paste is printed on the surface of the ceramic green sheet to form a wiring. And after forming a through hole in a predetermined place of the ceramic green sheet, a metal sheet is laminated on the ceramic green sheet in which the through hole is formed, and a metal is formed by pressing a through hole forming portion in the ceramic green sheet from the metal sheet side. A part of the sheet is embedded in the through hole, and the ceramic green sheet and the metal sheet are integrated. At this time, it is desirable that the ceramic green sheet and the metal sheet have substantially the same thickness.

このシートを複数積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼成することで、表面や内部に接続電極9、外部接続端子13、内部配線15、および金属体5が形成された表面実装型発光素子用配線基板11を作製することができる。   Surface mounting in which a plurality of the sheets are laminated and fired in an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere to form the connection electrode 9, the external connection terminal 13, the internal wiring 15, and the metal body 5 on the surface or inside. Type light emitting element wiring substrate 11 can be manufactured.

また、接続電極9および外部接続端子13は、薄膜法によって絶縁基体1の表面に形成したり、金属箔を成形体の表面に転写するなどして形成してもよく、金属体5は、予め、焼成しておいた絶縁基体1にはんだ、銀ロウおよび活性ロウなどを用いて純金属のブロックを接着して形成してもよい。   Further, the connection electrode 9 and the external connection terminal 13 may be formed on the surface of the insulating substrate 1 by a thin film method, or may be formed by transferring a metal foil to the surface of the molded body. Alternatively, a pure metal block may be bonded to the baked insulating substrate 1 using solder, silver solder, active solder, or the like.

そして、図1(b)に示すような枠体17は、セラミックグリーンシートを打ち抜き加工し、絶縁基体1のセラミックグリーンシートに積層し、同時焼成を行うことによって形成することができる。また、切削やエッチングによりAlやFe−Ni−Co合金等の金属を枠状に形成し、焼結した絶縁基体1にロウ剤や樹脂を用いて接着することも可能である。ロウ剤を用いて接着する場合には、絶縁基体1と枠体17の接着面に、金属ペーストを用いて金属層(図示せず)を形成しておくことが必要である。   A frame 17 as shown in FIG. 1B can be formed by punching a ceramic green sheet, laminating it on the ceramic green sheet of the insulating substrate 1, and performing simultaneous firing. It is also possible to form a metal such as Al or Fe—Ni—Co alloy by cutting or etching into a frame shape and adhere the sintered insulating substrate 1 using a brazing agent or a resin. When bonding using a brazing agent, it is necessary to form a metal layer (not shown) using a metal paste on the bonding surface between the insulating substrate 1 and the frame 17.

また、接続電極9、外部接続端子13、金属体5、および枠体17の表面にNi、Au、AlやAgなどからなるめっき層(図示せず)を形成して、反射率を高め、発光素子から生じる光の取り出し効率を向上させてもよい。   Further, a plating layer (not shown) made of Ni, Au, Al, Ag, or the like is formed on the surfaces of the connection electrode 9, the external connection terminal 13, the metal body 5, and the frame body 17 to increase the reflectance and emit light. You may improve the extraction efficiency of the light which arises from an element.

そして、例えば、図2に示すように、以上説明した本発明の表面実装型発光素子用配線基板11の搭載部7に、発光素子21を金属や樹脂からなる接続層23を用いて搭載し、この発光素子21の端子(図示せず)と、接続電極9とをボンディングワイヤ25で接続し、発光素子21、接続層23やボンディングワイヤ25をモールド材などの透光性の封止樹脂27等で覆うことで、本発明の発光装置29となる。   Then, for example, as shown in FIG. 2, the light emitting element 21 is mounted on the mounting portion 7 of the above-described surface mount type light emitting element wiring board 11 of the present invention using the connection layer 23 made of metal or resin, A terminal (not shown) of the light emitting element 21 and the connection electrode 9 are connected by a bonding wire 25, and the light emitting element 21, the connection layer 23, and the bonding wire 25 are made of a translucent sealing resin 27 such as a molding material. By covering with, it becomes the light emitting device 29 of the present invention.

また、発光素子21は、封止樹脂27により被覆されているが、封止樹脂27を用いずに、蓋体(図示せず)を用いて封止してもよく、また、封止樹脂27と蓋体とを併用してもよい。この場合に用いられる蓋体としては、ガラスなどの透光性の素材を用いることが望ましい。   Further, although the light emitting element 21 is covered with the sealing resin 27, the light emitting element 21 may be sealed using a lid (not shown) without using the sealing resin 27. And a lid may be used in combination. As the lid used in this case, it is desirable to use a translucent material such as glass.

なお、必要に応じて、この封止樹脂27に発光素子21が放射する光を波長変換するための蛍光体(図示せず)を添加してもよい。   In addition, you may add the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 21 radiates | emits to this sealing resin 27 as needed.

また、発光素子21の熱を金属基体11に効率よく伝達するという観点から、接続層23として半田、インジウム、AuSn合金などの金属を用いることが望ましい。   Further, from the viewpoint of efficiently transferring the heat of the light emitting element 21 to the metal substrate 11, it is desirable to use a metal such as solder, indium, AuSn alloy as the connection layer 23.

なお、本発明においてもヒートシンクを設けることで、更に放熱性が向上することはもちろんであり、例えば、ヒートシンクのような冷却装置を設けることを排除するものではない。   In the present invention, the heat dissipation is further improved by providing the heat sink. For example, it is not excluded to provide a cooling device such as a heat sink.

以上説明した本発明の表面実装型発光素子用配線基板11に発光素子21を搭載した本発明の発光装置29によれば、金属体5と外部接続端子13を通して、発光素子21からの発熱を速やかに装置外に放出することができるため、発熱による輝度低下を抑制でき、また、外部接続端子13の設計の自由度が高いため、小型化を実現することができる。   According to the light emitting device 29 of the present invention in which the light emitting element 21 is mounted on the surface mount type light emitting element wiring substrate 11 of the present invention described above, the heat generated from the light emitting element 21 is rapidly generated through the metal body 5 and the external connection terminal 13. Therefore, it is possible to reduce the brightness due to heat generation, and the degree of freedom in designing the external connection terminal 13 is high, so that downsizing can be realized.

なお、本発明の表面実装型発光素子用配線基板における接続電極9と外部接続端子13との電気的な接続は、内部配線15による接続のみならず、図4(a)に示すように外部配線16による接続であってもよい。   In addition, the electrical connection between the connection electrode 9 and the external connection terminal 13 in the surface mount type light emitting element wiring board of the present invention is not limited to the connection by the internal wiring 15, but as shown in FIG. 16 may be used.

また、図4(b)に示すように、金属体5の下面を下側から覆うように、絶縁基体1の上面1aと平行にカバーランドを設けることで、金属体5と絶縁基体1との界面の応力緩和という効果に加えて、金属体5から外部接続端子13へ熱が多く伝わるようになり、さらに放熱性を向上させることができるという効果も得られる。   Further, as shown in FIG. 4B, by providing a cover land in parallel with the upper surface 1a of the insulating base 1 so as to cover the lower surface of the metal body 5 from below, the metal body 5 and the insulating base 1 are In addition to the effect of stress relaxation at the interface, a large amount of heat is transmitted from the metal body 5 to the external connection terminal 13, and the effect of further improving heat dissipation can be obtained.

これまで述べた形態では金属体5が絶縁基体1の上面1aに露出していたが、図5(a)に示すように、金属体5が搭載部7の直下の絶縁基体1の内部に埋設され、金属体5と接続電極9との間に絶縁基体1が介在するようにしてもよい。この場合は、金属体5が絶縁基体1の上面1aに露出することがなく、接続電極9の形状や発光素子21以外の実装部品の配置についての制約はなくなり、設計の自由度が高くなる。すなわち、表面実装型発光素子用配線基板の小型化に寄与することができる。この形態においては、搭載部7は上から見て金属体5の断面に範囲内にある、換言すれば金属体5の上から見た断面の外周が搭載部7よりも外側に位置するのが好ましい。なお、ここでいう搭載部7とは絶縁基体1の上面1aの発光素子21が搭載される領域、換言すれば上から見て発光素子21と重なる絶縁基体1の上面領域のことを意味する。   In the embodiment described so far, the metal body 5 is exposed on the upper surface 1 a of the insulating base 1. However, as shown in FIG. 5A, the metal body 5 is embedded in the insulating base 1 immediately below the mounting portion 7. The insulating substrate 1 may be interposed between the metal body 5 and the connection electrode 9. In this case, the metal body 5 is not exposed to the upper surface 1a of the insulating base 1, and there are no restrictions on the shape of the connection electrode 9 and the arrangement of mounting parts other than the light emitting element 21, and the degree of freedom in design increases. That is, it can contribute to the miniaturization of the surface mount type light emitting element wiring board. In this embodiment, the mounting portion 7 is within the range of the cross section of the metal body 5 when viewed from above, in other words, the outer periphery of the cross section viewed from the top of the metal body 5 is located outside the mounting portion 7. preferable. Here, the mounting portion 7 means a region on the upper surface 1a of the insulating base 1 where the light emitting element 21 is mounted, in other words, an upper surface region of the insulating base 1 that overlaps the light emitting element 21 when viewed from above.

そして、図5(b)に示すように、絶縁基体1の内部に金属体5を埋設することで、フリップチップ型(フェースダウン構造)の発光素子を実装した場合であっても、一対の接続電極を電気的に接続してしまうことなく金属体を配置できることから、十分な放熱効果を得ることができる。すなわち、絶縁基体の上面に形成される接続電極としては、電位差の加わる接続電極が一対あって、フリップチップ型(フェースダウン構造)の発光素子を実装して発光素子の電極端子をそれぞれの接続電極に接続させるとした場合に金属体が絶縁基体の上面に露出していると、この電位差の加わる一対の接続電極を電気的に接続させてしまうこととなる。これに対し、金属体が絶縁基体の上面に露出しない場合には、フリップチップ型(フェースダウン構造)の発光素子を実装したとしても、一対の接続電極を電気的に接続させることなく金属体を配置でき、十分な放熱効果を得ることができる。   Then, as shown in FIG. 5B, a pair of connections are provided even when a flip-chip type (face-down structure) light-emitting element is mounted by embedding a metal body 5 inside the insulating substrate 1. Since the metal body can be disposed without electrically connecting the electrodes, a sufficient heat dissipation effect can be obtained. That is, as the connection electrodes formed on the upper surface of the insulating substrate, there are a pair of connection electrodes to which a potential difference is applied. A flip chip type (face-down structure) light-emitting element is mounted, and the electrode terminals of the light-emitting elements are connected to the respective connection electrodes. When the metal body is exposed on the upper surface of the insulating base when it is connected to the pair, the pair of connection electrodes to which this potential difference is applied are electrically connected. On the other hand, when the metal body is not exposed on the upper surface of the insulating base, the metal body is not electrically connected to the pair of connection electrodes even if a flip chip type (face-down structure) light emitting element is mounted. It can arrange | position and can acquire sufficient heat dissipation effect.

このとき、金属体5と接続電極9との間の絶縁基体1の厚み(金属体5の上面から絶縁基体1の上面1aまでの距離)は、金属体5と外部接続端子13との間の絶縁基体1の厚みと同様に、絶縁性および放熱性の点から50〜200μm、特に60〜150μm、さらに好適には80〜100μmであることが望ましい。   At this time, the thickness of the insulating base 1 between the metal body 5 and the connection electrode 9 (distance from the upper surface of the metal body 5 to the upper surface 1a of the insulating base 1) is between the metal body 5 and the external connection terminal 13. Similar to the thickness of the insulating substrate 1, it is desirable that the thickness is 50 to 200 μm, particularly 60 to 150 μm, and more preferably 80 to 100 μm from the viewpoint of insulation and heat dissipation.

さらに、金属体5と接続電極9との間に絶縁基体1が介在する場合であり、かつ搭載部7に独立した金属膜8が形成されているかまたは接続電極9が延出している場合には、発光素子21の実装時に熱伝導性の高い材料を用いて発光素子21と搭載部7とを接合することができる。   Further, in the case where the insulating substrate 1 is interposed between the metal body 5 and the connection electrode 9 and when the independent metal film 8 is formed on the mounting portion 7 or the connection electrode 9 extends. When the light emitting element 21 is mounted, the light emitting element 21 and the mounting portion 7 can be joined using a material having high thermal conductivity.

ここで、搭載部7に接続電極9が延出しているとは、図6(a)に示すように、図2(a)に示す一対の接続電極9のうちの一方が絶縁基体1の上面1aに平行な方向に延びて接続電極9が搭載部7の全領域に形成されていることを意味する。また、搭載部7に独立した金属膜8が形成されているとは、図6(b)に示すように、接続電極9とは電気的に接続されていない金属膜8が搭載部7の全領域に形成されたことを意味する。   Here, the connection electrode 9 is extended to the mounting portion 7, as shown in FIG. 6A, one of the pair of connection electrodes 9 shown in FIG. It means that the connection electrode 9 is formed in the entire region of the mounting portion 7 so as to extend in a direction parallel to 1a. Further, the independent metal film 8 is formed on the mounting portion 7 as shown in FIG. 6B. The metal film 8 that is not electrically connected to the connection electrode 9 is formed on the entire mounting portion 7. It means that it was formed in the region.

例えば、搭載部7にAuめっきが施された金属膜8が形成されている場合、AuSn合金を用いた接合で発光素子21を実装することで、高い放熱効果を得ることができる。また、搭載部7に独立した金属膜8が形成されているかまたは接続電極が延出していることで、光が搭載部7で反射されるため光の取り出し効率の向上につながるという効果も得られる。例えば、表面に反射率の高いAgめっきが施されている場合には、光の取り出し効率を向上させることができる。   For example, when the metal film 8 plated with Au is formed on the mounting portion 7, a high heat dissipation effect can be obtained by mounting the light emitting element 21 by bonding using an AuSn alloy. Further, since the independent metal film 8 is formed on the mounting portion 7 or the connection electrode is extended, the light is reflected by the mounting portion 7, so that the light extraction efficiency can be improved. . For example, when Ag plating with high reflectance is applied to the surface, the light extraction efficiency can be improved.

表面実装型発光素子用配線基板の絶縁基体の原料粉末として純度99%以上、平均粒径が1.5μmのAl粉末、純度99%以上、平均粒径1.0μmのSiO粉末、純度99%以上、平均粒子径1.5μmのMn粉末を用い、Al粉末90質量%、SiO粉末5質量%、Mn粉末5質量%を混合し、成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。しかる後に、ドクターブレード法にてセラミックグリーンシートを作製した。 Al 2 O 3 powder having a purity of 99% or more and an average particle size of 1.5 μm, SiO 2 powder having a purity of 99% or more and an average particle size of 1.0 μm Using a Mn 2 O 3 powder having a purity of 99% or more and an average particle size of 1.5 μm, 90% by mass of Al 2 O 3 powder, 5% by mass of SiO 2 powder, and 5% by mass of Mn 2 O 3 powder are mixed for molding. A slurry was prepared by mixing an acrylic binder as an organic resin (binder) and toluene as a solvent. Thereafter, a ceramic green sheet was prepared by a doctor blade method.

また、金属シートの原料粉末として、平均粒径2.0μmのWおよびCuを用い、Cu粉末30質量%、W粉末70質量%を混合し、成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として添加し、セラミックグリーンシートと同様に、金属シートとなるスラリーを調整後、ドクターブレード法にてセラミックグリーンシートと実質的に同一厚みの金属シートを作製した。   Moreover, as a raw material powder of the metal sheet, W and Cu having an average particle size of 2.0 μm are mixed, 30% by mass of Cu powder and 70% by mass of W powder are mixed, an acrylic binder as a molding organic resin (binder), Toluene was added as a solvent, and a metal sheet having a thickness substantially the same as that of the ceramic green sheet was prepared by a doctor blade method after adjusting the slurry to be a metal sheet in the same manner as the ceramic green sheet.

また、平均粒子径2μmのCu粉末30質量%、平均粒子径2μmのW粉、アクリル系バインダとアセトンとを溶媒として混合し、溶剤を減圧過熱等によって除くことにより導体ペーストを調製した。   Also, a conductor paste was prepared by mixing 30% by mass of Cu powder having an average particle diameter of 2 μm, W powder having an average particle diameter of 2 μm, an acrylic binder and acetone, and removing the solvent by heating under reduced pressure or the like.

そして、上記の絶縁基体となるセラミックグリーンシートに対して、打ち抜き加工を施し、直径が100μmのビアホールを形成し、このビアホール内に、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布した。   Then, the ceramic green sheet as the insulating base is punched to form a via hole having a diameter of 100 μm. The via hole is filled with a conductor paste by a screen printing method and printed in a wiring pattern. Applied.

次に、セラミックグリーンシートの所定箇所に貫通穴を形成し、セラミックグリーンシートにおける貫通穴形成部分を金属シートから押圧することによって、金属シートの一部を貫通穴内に埋め込み、セラミックグリーンシートと金属シートと一体化した。   Next, a through hole is formed in a predetermined portion of the ceramic green sheet, and a part of the metal sheet is embedded in the through hole by pressing a through hole forming portion of the ceramic green sheet from the metal sheet. And integrated.

このようにして作製したセラミックグリーンシートと金属シートの複合体、およびセラミックグリーンシートを組み合わせ、位置合わせし、積層圧着して積層体を作製した。   The composite of the ceramic green sheet and metal sheet thus prepared, and the ceramic green sheet were combined, aligned, and laminated and pressed to produce a laminate.

その後、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300℃の最高温度で2時間焼成し、表面実装型発光素子用配線基板を作製した。なお、接続電極、外部接続端子の厚みは20μmとした。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., the substrate is subsequently baked at a maximum temperature of 1300 ° C. for 2 hours in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C. Produced. The thickness of the connection electrode and the external connection terminal was 20 μm.

次いで、接続電極、外部接続端子、絶縁基体の上面に露出する金属体の表面にNi、AuおよびAgめっきを順次施した。   Subsequently, Ni, Au, and Ag plating were sequentially performed on the surface of the metal body exposed on the upper surface of the connection electrode, the external connection terminal, and the insulating base.

作製した本発明の表面実装型発光素子用配線基板および本発明の範囲外の表面実装型発光素子用配線基板の形状は、以下の記載と図3を用いて説明する。   The shapes of the surface-mounted light-emitting element wiring board of the present invention and the surface-mounted light-emitting element wiring board outside the scope of the present invention will be described with reference to the following description and FIG.

図3に示したのは、作製した表面実装型発光素子用配線基板を下から見た平面図であり、図3(a)が本発明の表面実装型発光素子用配線基板であり、図3(b)、(c)が比較例として作製した試料である。つまり、図3(b)は金属体と外部接続端子とが表面実装型発光素子用配線基板の厚み方向で重ならない試料を示した図であり、図3(c)は貫通金属体を設けた試料の図である。なお、図3(a)、(b)において波線で示した円は表面実装型発光素子用配線基板に設けられた金属体の位置を示すものである。   FIG. 3 is a plan view of the fabricated surface-mount light-emitting element wiring board as viewed from below, and FIG. 3A is the surface-mount light-emitting element wiring board of the present invention. (B) and (c) are samples prepared as comparative examples. That is, FIG. 3B is a view showing a sample in which the metal body and the external connection terminal do not overlap in the thickness direction of the surface mounting type light emitting element wiring board, and FIG. It is a figure of a sample. 3A and 3B, the circle indicated by the wavy line indicates the position of the metal body provided on the surface mount type light emitting element wiring board.

全ての試料において、外部接続端子13は、絶縁基体の一方の辺から対向する他方の辺に縦断するように長方形状の2つを平行に形成し、この外部接続端子13の幅Wを表1に示すように変化させた。また、2つの外部接続端子13間の距離Gも表1に示すように変化させた。   In all the samples, two external connection terminals 13 are formed in parallel so as to run vertically from one side of the insulating base to the other side facing each other. The width W of the external connection terminal 13 is shown in Table 1. It changed as shown in. The distance G between the two external connection terminals 13 was also changed as shown in Table 1.

また、表1には、外部接続端子が絶縁基体の下面に対して占める面積の割合をS1として示し、金属体と外部接続端子との重なる面積が、上から見た金属体の断面積に対して重なっている割合をS2として示した。   Table 1 shows the ratio of the area of the external connection terminal to the lower surface of the insulating base as S1, and the area where the metal body and the external connection terminal overlap is relative to the cross-sectional area of the metal body viewed from above. The overlapping ratio is shown as S2.

作製した表面実装型発光素子用配線基板は4mm×4mmの板状の絶縁基体に設けた直径1.8mmで厚みが0.4mmの有底穴に同じ大きさの金属体を配置したもので、厚みは0.4mmに表1に記載する金属体と外部接続端子との間の絶縁基体の厚みを加えたものである。絶縁基体の熱伝導率は、16W/(m・K)であった。また、搭載部側には幅が0.4mmで厚みが0.3mmの枠体を絶縁基体の端に沿って配置した。   The produced surface mount type light emitting element wiring board is a metal body of the same size arranged in a bottomed hole having a diameter of 1.8 mm and a thickness of 0.4 mm provided on a 4 mm × 4 mm plate-like insulating base, The thickness is 0.4 mm plus the thickness of the insulating base between the metal body and the external connection terminals described in Table 1. The thermal conductivity of the insulating substrate was 16 W / (m · K). Further, a frame body having a width of 0.4 mm and a thickness of 0.3 mm was disposed on the mounting portion side along the end of the insulating base.

なお、表1中の試料No.11については、金属体と接続電極との間に、金属体と外部接続端子間の絶縁基体厚みと同じ絶縁基体厚みを設けた。したがって、穴の形状を有蓋底穴とした。   In addition, sample No. in Table 1 For No. 11, the same insulating base thickness as the insulating base thickness between the metal body and the external connection terminals was provided between the metal body and the connection electrode. Therefore, the shape of the hole was a covered bottom hole.

これらの表面実装型発光素子用配線基板の搭載部に接着剤としてエポキシ樹脂を用いて出力1.5Wの発光素子であるLEDチップを実装し、ボンディングワイヤによりLEDチップと接続端子とを結線し発光装置を作製した。   An LED chip, which is a light emitting element with an output of 1.5 W, is mounted on the mounting portion of these surface mount type light emitting element wiring boards using epoxy resin as an adhesive, and the LED chip and the connection terminal are connected by a bonding wire to emit light. A device was made.

得られた発光装置を有機基板に半田にて実装し、発光装置に0.4Aの電流を通電し、1分後の素子温度の測定を行った。結果を表1に示す。

Figure 2008109079
The obtained light-emitting device was mounted on an organic substrate with solder, a current of 0.4 A was passed through the light-emitting device, and the element temperature was measured after 1 minute. The results are shown in Table 1.
Figure 2008109079

表1によれば、貫通穴を設けた試料No.1では、金属体の下部には空気しかないため、発光素子の温度が86℃まで上昇した。また、有底穴の中に金属体が配置されてはいるものの、金属体と外部接続端子とが重ならない試料No.2では、熱の伝達経路が長くなり、発光素子の温度が88℃まで上昇した。発光素子の温度が80℃を超えると、発光効率がかなり低下してしまうので、80℃以下に抑えることが求められる。   According to Table 1, sample no. In 1, the temperature of the light emitting element rose to 86 ° C. because there was only air in the lower part of the metal body. In addition, although the metal body is disposed in the bottomed hole, the sample No. in which the metal body does not overlap the external connection terminal. In No. 2, the heat transfer path became longer, and the temperature of the light emitting element rose to 88 ° C. When the temperature of the light-emitting element exceeds 80 ° C., the light emission efficiency is considerably lowered, so that it is required to be suppressed to 80 ° C. or less.

これに対し、有底穴の中に金属体を配置し、外部接続端子の一部が上から見て金属体と重なっている本発明の試料No.3〜10、および絶縁基体の内部における搭載部の直下に金属体が埋設された試料No.11では、発光素子の温度上昇を80℃以下に抑えることができた。   On the other hand, the sample No. of the present invention in which a metal body is arranged in the bottomed hole and a part of the external connection terminal overlaps the metal body as viewed from above. 3 to 10 and Sample No. in which a metal body was embedded immediately below the mounting portion inside the insulating substrate. 11, the temperature rise of the light emitting element could be suppressed to 80 ° C. or less.

以上、説明したとおり、本発明によれば、表面実装型発光素子用配線基板の設計の自由度を向上させることができるとともに、放熱性に優れた表面実装型発光素子用配線基板およびそれを用いた発光装置を提供することができる。   As described above, according to the present invention, the degree of freedom in designing the surface-mount light-emitting element wiring board can be improved, and the surface-mount light-emitting element wiring board excellent in heat dissipation and the use thereof A light emitting device can be provided.

(a)は、本発明の表面実装型発光素子用配線基板の断面図であり、(b)は、枠体を設けた本発明の表面実装型発光素子用配線基板の断面図である。(A) is sectional drawing of the wiring board for surface mount type light emitting elements of this invention, (b) is sectional drawing of the wiring board for surface mount type light emitting elements of this invention which provided the frame. (a)は、本発明の発光装置の断面図であり、(b)は、枠体を設けた本発明の発光装置の断面図である。(A) is sectional drawing of the light-emitting device of this invention, (b) is sectional drawing of the light-emitting device of this invention which provided the frame. (a)は、本発明の表面実装型発光素子用配線基板を下から見た平面図であり、図3(b)、(c)は、比較例の表面実装型発光素子用配線基板を下から見た平面図である。(A) is the top view which looked at the wiring board for surface mount type light emitting elements of this invention from the bottom, FIG.3 (b), (c) is the wiring board for surface mount type light emitting elements of a comparative example below. It is the top view seen from. (a)は、本発明の表面実装型発光素子用配線基板の他の実施形態の断面図であり、(b)は、本発明の表面実装型発光素子用配線基板のさらに他の実施形態の断面図である。(A) is sectional drawing of other embodiment of the wiring board for surface mount type light emitting elements of this invention, (b) is another embodiment of the wiring board for surface mount type light emitting elements of this invention. It is sectional drawing. (a)は、本発明の表面実装型発光素子用配線基板の他の実施形態の断面図であり、(b)は、本発明の表面実装型発光素子用配線基板にフリップチップ型の発光素子を実装した本発明の発光装置の断面図である。(A) is sectional drawing of other embodiment of the surface mounting type light emitting element wiring board of this invention, (b) is a flip chip type light emitting element in the surface mounting type light emitting element wiring board of this invention. It is sectional drawing of the light-emitting device of this invention which mounted | wore. (a)は、本発明の発光装置の他の実施形態の断面図であり、(b)は、本発明の発光装置のさらに他の実施形態の断面図である。(A) is sectional drawing of other embodiment of the light-emitting device of this invention, (b) is sectional drawing of other embodiment of the light-emitting device of this invention.

符号の説明Explanation of symbols

1・・・絶縁基体
1a・・・絶縁基体の上面
1b・・・絶縁基体の下面
3・・・有底穴
5・・・金属体
7・・・搭載部
8・・・独立した金属膜
9・・・接続電極
11・・・表面実装型発光素子用配線基板
13・・・外部接続端子
15・・・内部配線
16・・・外部配線
21・・・発光素子
29・・・発光装置
DESCRIPTION OF SYMBOLS 1 ... Insulating base | substrate 1a ... Upper surface 1b of an insulating base | substrate ... Lower surface 3 of an insulating base | substrate ... Bottom hole 5 ... Metal body 7 ... Mounting part 8 ... Independent metal film 9 ... Connecting electrode 11 ... Surface-mount type light emitting element wiring board 13 ... External connection terminal 15 ... Internal wiring 16 ... External wiring 21 ... Light emitting element 29 ... Light emitting device

Claims (6)

上面に開口を有する有底穴を備えたセラミックスからなる絶縁基体と、上面に発光素子を搭載する搭載部を備え、前記有底穴に配置された金属体と、前記絶縁基体の上面に形成された接続電極と、前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端子とを備えており、前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されていることを特徴とする表面実装型発光素子用配線基板。 An insulating base made of ceramics having a bottomed hole having an opening on the upper surface, a mounting portion for mounting a light emitting element on the upper surface, a metal body disposed in the bottomed hole, and formed on the upper surface of the insulating base A connection electrode and an external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode, wherein the metal body and the external connection terminal are at least partially overlapped with each other. A wiring board for a surface-mounted light-emitting element, which is arranged. 前記接続電極と前記外部接続端子とが前記絶縁基体の内部に形成された内部配線によって電気的に接続されていることを特徴とする請求項1に記載の表面実装型発光素子用配線基板。 2. The surface mount type light emitting element wiring board according to claim 1, wherein the connection electrode and the external connection terminal are electrically connected by an internal wiring formed in the insulating base. 上面に発光素子を搭載する搭載部を有するセラミックスからなる絶縁基体と、前記搭載部の直下の前記絶縁基体の内部に埋設された金属体と、前記絶縁基体の上面に形成された接続電極と、前記絶縁基体の下面に形成され前記接続電極と電気的に接続された外部接続端子とを備えており、前記金属体と前記外部接続端子とは少なくとも一部が上下に重なって配置されていることを特徴とする表面実装型発光素子用配線基板。 An insulating base made of ceramics having a mounting portion for mounting a light emitting element on the upper surface; a metal body embedded in the insulating base immediately below the mounting portion; a connection electrode formed on the upper surface of the insulating base; An external connection terminal formed on the lower surface of the insulating base and electrically connected to the connection electrode, wherein the metal body and the external connection terminal are arranged so that at least a part thereof overlaps vertically; A surface mount type light emitting device wiring board characterized by the above. 前記搭載部に独立した金属膜が形成されているかまたは前記接続電極が延出していることを特徴とする請求項3に記載の表面実装型発光素子用配線基板。 The surface mount type light emitting element wiring board according to claim 3, wherein an independent metal film is formed on the mounting portion or the connection electrode extends. 前記セラミックスの熱伝導率が15W/(m・K)以上、前記金属体と前記外部接続端子との間の前記絶縁基体の厚みが50〜200μmであり、前記金属体の下面の30%以上が前記外部接続端子と上下に重なって配置されていることを特徴とする請求項1乃至請求項4のうちいずれかに記載の表面実装型発光素子用配線基板。 The ceramic has a thermal conductivity of 15 W / (m · K) or more, the thickness of the insulating base between the metal body and the external connection terminal is 50 to 200 μm, and 30% or more of the lower surface of the metal body The wiring board for a surface-mounted light-emitting element according to any one of claims 1 to 4, wherein the wiring board is disposed so as to overlap with the external connection terminal. 請求項1乃至請求項5のうちいずれかに記載の表面実装型発光素子用配線基板の前記搭載部に発光素子を搭載してなることを特徴とする発光装置。 A light emitting device comprising a light emitting element mounted on the mounting portion of the wiring board for a surface mount type light emitting element according to any one of claims 1 to 5.
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