JP4841284B2 - WIRING BOARD FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - Google Patents

WIRING BOARD FOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE Download PDF

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JP4841284B2
JP4841284B2 JP2006087281A JP2006087281A JP4841284B2 JP 4841284 B2 JP4841284 B2 JP 4841284B2 JP 2006087281 A JP2006087281 A JP 2006087281A JP 2006087281 A JP2006087281 A JP 2006087281A JP 4841284 B2 JP4841284 B2 JP 4841284B2
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light emitting
emitting element
metal body
light
space
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JP2007266173A (en
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美奈子 泉
智英 長谷川
康博 佐々木
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high reliability wiring board for light emitting elements which is superior in light emitting efficiency and prevents the seal resin from peeling. <P>SOLUTION: A flat insulation ceramic insulation base 1 has wirings 3, 5, 7 formed thereon. A metal body 13 is inserted in a through-hole 11 piercing the base 1 with leaving a gap 15 formed with the through-hole 11 and has a higher thermal conductivity than the insulation base 1, a greater flange 13a at one end greater than the through-hole 11, and a mounting surface 9 on the opposite end face than the end face having the flange 13a for mounting a light emitting element. The body 13 is bonded to the insulation base 1 by the flange 13a to form a space 17 between the flange 13a and the main surface of the base 1; the space 17 communicating with the gap 15 through a connecting part 19. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

本発明は、例えば、発光ダイオード等の発光素子を搭載するための発光素子用配線基板ならびに発光装置に関する。   The present invention relates to a light emitting element wiring board and a light emitting device for mounting a light emitting element such as a light emitting diode.

従来、LEDを用いた発光装置は、非常に発光効率が高く、しかも、白熱電球などと比較すると発光に伴い発生する熱量が小さいために様々な用途に用いられてきた。しかしながら、白熱電球や蛍光灯などと比較すると発光量が小さいために、照明用ではなく、表示用の光源として用いられ、通電量も30mA程度と非常に小さいものであった(例えば、特許文献1を参照。)。   Conventionally, light emitting devices using LEDs have been used for various applications because of their extremely high luminous efficiency and the small amount of heat generated with light emission compared to incandescent bulbs. However, since it emits less light than incandescent bulbs, fluorescent lamps, etc., it is used not as an illumination light source but as a display light source, and the energization amount is as small as about 30 mA (for example, Patent Document 1). See).

そして、近年では、発光素子を用いた発光装置を携帯電話や大型液晶TV等のバックライトへも用途が拡大してきている。   In recent years, the use of light-emitting devices using light-emitting elements has been expanded to backlights such as mobile phones and large liquid crystal TVs.

この用途拡大により発光素子の高輝度化が要求され、これに伴い、発光装置から発生する熱も増加しており、熱ストレスにより封止樹脂が充填部から剥離するという問題が発生している。これに対して、凹状の収納部の底面に発光素子を実装し封止樹脂を充填する収納部の開口端をひさしのようにつきだして、封止樹脂の剥離及び落下を防ぐ構造がとられている(例えば、特許文献2を参照。)。
特開2002−134790号公報 特開2004−111937号公報
Due to this expanded use, it is required to increase the brightness of the light-emitting element, and accordingly, heat generated from the light-emitting device is also increasing, and there is a problem that the sealing resin is peeled off from the filling portion due to thermal stress. On the other hand, a structure is employed in which the light emitting element is mounted on the bottom surface of the concave storage portion and the opening end of the storage portion filled with the sealing resin is exposed like an eaves to prevent the sealing resin from peeling and dropping. (For example, refer to Patent Document 2).
JP 2002-134790 A JP 2004-111937 A

しかしながら、さらなる発光素子の高輝度化要求により、発光装置から発生する熱も増加傾向にあり、現状の構造では封止樹脂の剥離及び落下防止が難しくなってきた。また、熱硬化時の収縮が大きな封止樹脂では、剥離及び落下を防ぐために突き出し部を長くしなければならない。そうすると、突き出し部により、素子からの発光が遮られ、発光効率が低下するという課題があった。   However, due to the demand for higher luminance of the light emitting element, the heat generated from the light emitting device is also increasing. With the current structure, it is difficult to peel off and prevent the sealing resin from dropping. Further, in a sealing resin having a large shrinkage at the time of thermosetting, the protruding portion must be lengthened in order to prevent peeling and dropping. If it does so, the light emission from an element was interrupted | blocked by the protrusion part, and there existed a subject that luminous efficiency fell.

本発明は、発光素子からの光取り出しを阻害することなく、封止樹脂の剥離及び落下を抑制することができ、しかも熱放散性に優れた発光素子用配線基板及び発光装置を提供することを目的とする。   The present invention provides a light-emitting element wiring board and a light-emitting device that can suppress peeling and dropping of the sealing resin without hindering light extraction from the light-emitting element, and that are excellent in heat dissipation. Objective.

本発明の発光素子用配線基板は、セラミックスからなる平板状の絶縁基体に配線が形成され、前記絶縁基体を貫通して設けられた貫通孔に、前記絶縁基体よりも高い熱伝導率を有し、一方の端部に前記貫通孔よりも大きな鍔部が形成され、該鍔部が形成された端面と反対の端面に発光素子を搭載する搭載面が形成された金属体が、前記貫通孔との間に空隙をもって挿入されているとともに、前記絶縁基体に前記金属体が前記鍔部で接続されて前記鍔部と前記絶縁基体の主面との間に空間が形成されており、かつ前記空間と前記空隙とが連通部を介して連通しており、前記金属体の側面には、前記空隙および前記連通部の少なくとも1つと連通する凹部が形成されていることを特徴とする
The wiring board for a light-emitting element of the present invention has a thermal conductivity higher than that of the insulating substrate in a through hole provided through the insulating substrate, with wiring formed on a flat insulating substrate made of ceramics. A metal body having a flange portion larger than the through hole formed at one end portion and a mounting surface on which a light emitting element is mounted is formed on the end surface opposite to the end surface where the flange portion is formed. And a space is formed between the flange and the main surface of the insulating substrate, and the space is formed between the metal body and the flange. And the gap communicated with each other via a communicating portion, and a concave portion communicating with at least one of the gap and the communicating portion is formed on a side surface of the metal body.

また、本発明の発光素子用配線基板は、前記凹部が前記空間と対向して前記連通部と連通していることが望ましい。   In the light-emitting element wiring board of the present invention, it is preferable that the recess is opposed to the space and communicates with the communication portion.

本発明の発光装置は、以上説明した構成の発光素子用配線基板の前記搭載面に発光素子が搭載され、封止樹脂が前記発光素子を覆うように配置されているとともに、前記封止樹脂が前記空隙と前記空間と前記凹部と前記連通部とに一体的に充填されていることを特徴とする。
The light emitting device of the present invention, above-described light emitting element to the mounting surface of the wiring board light emitting device having the structure is mounted, disposed Tei Rutotomoni as sealing resin covering the light emitting element, the sealing resin is The gap, the space, the concave portion, and the communicating portion are integrally filled.

本発明の発光素子用配線基板は、セラミックスからなる平板上の絶縁基体を貫通して設けられた貫通孔に、前記絶縁基体よりも高い熱伝導率を有する金属体が挿入されることから、発光素子から発生する熱を金属体から効率良く、かつ速やかに系外へ放散することができ、発光素子が過剰に加熱されることを防止できる。そのため輝度低下防止あるいは、さらなる高輝度化が可能となる。しかも、金属体は貫通孔との間に空隙を持って配置されているため、絶縁基体と金属体との熱膨張差による応力を緩和し、金属体の接合信頼性を向上させることができる。また、さらに、鍔部と絶縁基体主面との間に、金属体と貫通孔との間に形成された空隙と連通する空間が形成されているとともに、金属体の側面に空隙および連通部の少なくとも1つと連通する凹部が設けられていることから、発光素子を被覆する封止樹脂を空隙、空間および凹部に一体的に充填することができ、これにより金属体が封止剤によって係止されるため、封止剤のみならず、金属体をも強固に固定することができる。
The wiring board for a light emitting element of the present invention emits light because a metal body having a higher thermal conductivity than the insulating base is inserted into a through-hole provided through the insulating base on a flat plate made of ceramics. The heat generated from the element can be dissipated from the metal body efficiently and promptly, and the light emitting element can be prevented from being heated excessively. For this reason, it is possible to prevent a decrease in luminance or to further increase the luminance. Moreover, since the metal body is disposed with a gap between the metal body and the through hole, stress due to a difference in thermal expansion between the insulating base and the metal body can be relieved, and the joining reliability of the metal body can be improved. Further, a space communicating with the gap formed between the metal body and the through hole is formed between the flange portion and the insulating base main surface, and the gap and the communication portion are formed on the side surface of the metal body. Since the concave portion communicating with at least one is provided , the sealing resin that covers the light emitting element can be integrally filled in the gap, the space, and the concave portion , and thereby the metal body is locked by the sealing agent. Therefore , not only the sealing agent but also the metal body can be firmly fixed.

また、空間と凹部とを対向するような位置に形成した場合には、金属体の製造が容易になり、しかも封止剤を空間や凹部に充填する際に、封止剤の流れが乱れることが少なくなり容易に本発明の発光素子用配線基板を形成することができる。   In addition, when the space and the recess are formed so as to face each other, the metal body can be easily manufactured, and the flow of the sealant is disturbed when the sealant is filled in the space or the recess. Therefore, the light emitting element wiring board of the present invention can be easily formed.

以上説明した本発明の発光素子用配線基板に発光素子を搭載した本発明の発光装置によれば、発光素子からの発熱を速やかに装置外に放出することができ、金属体との信頼性に優れ、封止樹脂を安定に固定することができる。   According to the light-emitting device of the present invention in which the light-emitting element is mounted on the wiring board for the light-emitting element of the present invention described above, heat generated from the light-emitting element can be quickly discharged outside the device, and reliability with the metal body is improved. It is excellent and the sealing resin can be fixed stably.

本発明の発光素子用配線基板には、例えば、図1(a)に示すように、セラミックスからなる平板上の絶縁基体1の主面1aに発光素子との配線である接続端子3(3a、3b)、絶縁基体1の他方の主面1bに外部電極端子5、接続端子3と外部電極端子5とを電気的に接続するように、絶縁基体1を貫通して貫通導体7が設けられ、一方の接続端子3aと他方の接続端子3bとの間には、発光素子を搭載するための搭載面9が形成されている。   For example, as shown in FIG. 1 (a), the wiring board for a light emitting element of the present invention has connection terminals 3 (3a, 3a, 3b), the through electrode 7 is provided through the insulating base 1 so as to electrically connect the external electrode terminal 5, the connection terminal 3 and the external electrode terminal 5 to the other main surface 1b of the insulating base 1. A mounting surface 9 for mounting a light emitting element is formed between one connection terminal 3a and the other connection terminal 3b.

そして、絶縁基体1を貫通して設けられた貫通孔11に、絶縁基体1よりも高い熱伝導率を有し、一方の端部に前記貫通孔11よりも大きな鍔部13aが形成された金属体13が前記貫通孔11との間に空隙15をもって挿入されるとともに、絶縁基体1と金属体の鍔部13aとの間に空間17が形成され、この空間17が、金属体13と貫通孔11との間に形成された空隙15と連通していることが重要である。   A metal having a heat conductivity higher than that of the insulating base 1 in a through hole 11 provided through the insulating base 1 and having a flange 13a larger than the through hole 11 at one end. The body 13 is inserted between the through hole 11 with a gap 15 and a space 17 is formed between the insulating base 1 and the flange 13a of the metal body. The space 17 is formed between the metal body 13 and the through hole. It is important to communicate with the gap 15 formed between the two.

そして、この空間17と空隙15とに一体的に封止樹脂を充填し、この封止樹脂により発光素子搭載面9に搭載される発光素子を封止することで、発光素子からの出力光を妨げることなく封止樹脂を強固に固定することができる。   The space 17 and the gap 15 are integrally filled with a sealing resin, and the light emitting element mounted on the light emitting element mounting surface 9 is sealed with the sealing resin, so that the output light from the light emitting element is The sealing resin can be firmly fixed without hindering.

つまり、空間17に充填された封止樹脂と発光素子を封止した封止樹脂とが連通部19において、空隙15に充填された封止樹脂と一体的に接続されていることにより、封止樹脂が空間17によって係止されるのである。   That is, the sealing resin filled in the space 17 and the sealing resin sealing the light emitting element are integrally connected to the sealing resin filled in the gap 15 at the communication portion 19, thereby sealing the sealing resin. The resin is locked by the space 17.

また、貫通孔11に絶縁基体1よりも高い熱伝導率を有する金属体13が挿入されることから、発光素子が発生する熱を効率良く系外へ放出することができ、発光素子の輝度低下防止、あるいは高輝度化を可能にすることができる。特に、金属体13の端面に搭載面9を形成することが望ましい。   Further, since the metal body 13 having a higher thermal conductivity than the insulating base 1 is inserted into the through hole 11, the heat generated by the light emitting element can be efficiently released outside the system, and the luminance of the light emitting element is reduced. It is possible to prevent or increase the brightness. In particular, it is desirable to form the mounting surface 9 on the end surface of the metal body 13.

さらに、金属体13の鍔部13aの絶縁基体1と向き合う面に突状に形成された接続部13bにおいて金属体13と絶縁基体1とが接続され、かつ貫通孔11において絶縁基体1と直接接触していないことから、絶縁基体1と金属体13との熱膨張差による応力を緩和し、破壊に対して高い信頼性を得ることができる。   Further, the metal body 13 and the insulating base 1 are connected to each other at a connecting portion 13b formed in a projecting manner on the surface of the flange 13a of the metal body 13 facing the insulating base 1, and is directly in contact with the insulating base 1 at the through hole 11. Therefore, stress due to the difference in thermal expansion between the insulating base 1 and the metal body 13 can be relieved, and high reliability against breakdown can be obtained.

なお、金属体13と絶縁基体1の接続にあたっては、例えば絶縁基体1に突起を設けてもよいことはもちろんである。   In connecting the metal body 13 and the insulating base 1, for example, a protrusion may be provided on the insulating base 1, for example.

また、図1(b)に示すように、搭載面9に搭載される発光素子からの光を誘導するため、あるいは発光素子を保護するために、搭載面9側の絶縁基体1の主面に枠体20を設けてもよい。この枠体20により、発光素子を保護できるとともに、発光素子の周辺に蛍光体などを容易に配置することができる。また、枠体20により発光素子の発する光を反射させて所定の方向に誘導することもできる。枠体20の内壁面20aは、絶縁基体の主面1aに対して垂直であっても良いし、傾斜していても良い。この枠体20の内壁面20aが外部に向かって傾斜している場合は、光の取り出し効率がさらに上昇する。また、枠体20の表面には、Ni、Au、Al、Agなどからなるめっき層(図示せず)を形成して光の反射率を高めてもよい。   Further, as shown in FIG. 1B, in order to induce light from the light emitting element mounted on the mounting surface 9 or to protect the light emitting element, the main surface of the insulating substrate 1 on the mounting surface 9 side is provided. A frame 20 may be provided. The frame body 20 can protect the light emitting element and can easily arrange a phosphor or the like around the light emitting element. Further, the light emitted from the light emitting element can be reflected by the frame body 20 and guided in a predetermined direction. The inner wall surface 20a of the frame body 20 may be perpendicular to the main surface 1a of the insulating base or may be inclined. When the inner wall surface 20a of the frame 20 is inclined toward the outside, the light extraction efficiency further increases. Further, a plating layer (not shown) made of Ni, Au, Al, Ag or the like may be formed on the surface of the frame body 20 to increase the light reflectance.

また、図2に示すように金属体13側面に、空隙15および連通部19の少なくとも1つと連通する凹部21設けられている。凹部21に封止樹脂が充填されることにより金属体13が係止され、充填剤のみならず、金属体13をも強固に固定することができる。
In addition, as shown in FIG. 2, a concave portion 21 that communicates with at least one of the gap 15 and the communication portion 19 is provided on the side surface of the metal body 13 . By filling the concave portion 21 with the sealing resin, the metal body 13 is locked, and not only the filler but also the metal body 13 can be firmly fixed.

また、連通部19を介して空間17と凹部21とが対向するような位置に形成した場合には、金属体13の製造が容易になり、しかも充填剤を空間17や凹部21に充填する際に、充填剤の流れが乱れることが少なくなり容易に本発明の発光素子用配線基板23を形成することができる。   Further, when the space 17 and the recess 21 are formed so as to face each other via the communication portion 19, the metal body 13 can be easily manufactured, and the filler 17 is filled with the filler 17. In addition, the flow of the filler is less disturbed, and the light emitting element wiring board 23 of the present invention can be easily formed.

そして、本発明で用いる金属体13は、円柱状、角柱状、その他柱状、また柱状が複数重なった階段形状のいずれの形状も取ることができるが、円柱状にすることにより角部の応力集中をなくすことができる。また、金属体13は、発光素子搭載面9が絶縁基体の発光素子搭載面側の主面1aよりも高い位置に突出した形でも良い。発光素子搭載面9が絶縁基体の主面1aよりも高い位置にあることにより、発光素子から生じる光が封止樹脂を通る光路長を短くすることができ、光の損失を防ぐため発光効率を高めることができる。また、発光素子の側面から出力される光も有効に利用することができる。   The metal body 13 used in the present invention can take any of a columnar shape, a prismatic shape, other columnar shapes, and a staircase shape in which a plurality of columnar shapes are overlapped. Can be eliminated. The metal body 13 may have a shape in which the light emitting element mounting surface 9 protrudes to a position higher than the main surface 1a on the light emitting element mounting surface side of the insulating base. Since the light emitting element mounting surface 9 is located higher than the main surface 1a of the insulating substrate, the light path length through which the light generated from the light emitting element passes through the sealing resin can be shortened, and the light emission efficiency is increased to prevent the loss of light. Can be increased. Moreover, the light output from the side surface of the light emitting element can also be used effectively.

また、図3に示すように、空隙15における貫通孔11と金属体13の間の距離Lは100〜1000μmであることが望ましい。距離Lが100μm未満の場合は、封止樹脂を充填し難くなり、1000μm以上の場合は、発光素子用配線基板23の小型化が困難となる。距離Lは特に、200〜500μmであることが望ましい。   Further, as shown in FIG. 3, the distance L between the through hole 11 and the metal body 13 in the gap 15 is preferably 100 to 1000 μm. When the distance L is less than 100 μm, it is difficult to fill the sealing resin, and when it is 1000 μm or more, it is difficult to reduce the size of the light emitting element wiring substrate 23. The distance L is particularly preferably 200 to 500 μm.

また、空間17の絶縁基体1と鍔部13aとの距離T1は、100〜1000μmであることが望ましい。距離T1が100μm未満の場合は、封止樹脂を充填し難くなり、1000μm以上の場合は、発光素子用配線基板23の小型化が困難となる。また、距離T1は、特に200〜500μmであることが望ましい。   The distance T1 between the insulating base 1 and the flange 13a in the space 17 is preferably 100 to 1000 μm. When the distance T1 is less than 100 μm, it is difficult to fill the sealing resin, and when it is 1000 μm or more, it is difficult to reduce the size of the light emitting element wiring substrate 23. The distance T1 is particularly preferably 200 to 500 μm.

また、空間17と貫通孔11の縁との距離T2は、大きいほど封止樹脂を係止する力が大きくなるが、大きすぎると熱伝導率の高い絶縁基体1の表面を熱伝導率の低い樹脂で覆うことになるため好ましくない。そのため、20μm以上、特に50μm以上で、500μm以下、特に200μm以下の範囲とすることが望ましい。   Further, as the distance T2 between the space 17 and the edge of the through hole 11 is larger, the force for locking the sealing resin is larger. However, if the distance T2 is too large, the surface of the insulating substrate 1 having high thermal conductivity has a low thermal conductivity. Since it will be covered with resin, it is not preferable. Therefore, it is desirable that the range be 20 μm or more, particularly 50 μm or more, 500 μm or less, particularly 200 μm or less.

また、空間17から鍔部13aにおける金属体13の端面までの距離T3は、大きいほど構造体として金属体13の剛性を保ち、絶縁基体1の強度を増すことができるが、大きすぎると発光素子用配線基板23の小型化を妨げる。そのため、距離T3は、100〜1000μm、特に200〜500μmであることが望ましい。   Further, as the distance T3 from the space 17 to the end face of the metal body 13 in the flange portion 13a is larger, the rigidity of the metal body 13 can be maintained as a structure and the strength of the insulating base 1 can be increased. This prevents the wiring board 23 from being downsized. Therefore, it is desirable that the distance T3 is 100 to 1000 μm, particularly 200 to 500 μm.

また、凹部21と貫通孔11の縁との距離T4は、大きいほど金属体13ならびに封止樹脂を係止する力が大きくなるが、大きすぎると熱伝導率の高い絶縁基体1の表面を熱伝導率の低い樹脂で覆うことになるため好ましくない。そのため、20μm以上、特に50μm以上で、500μm以下、特に200μm以下の範囲とすることが望ましい。なお、凹部21の貫通孔11の貫通方向に平行な方向の距離T5については、空間17の絶縁基体1と鍔部13aとの距離T1と同様である。   Further, as the distance T4 between the recess 21 and the edge of the through hole 11 increases, the force for locking the metal body 13 and the sealing resin increases. However, if the distance T4 is too large, the surface of the insulating substrate 1 having high thermal conductivity is heated. It is not preferable because it is covered with a resin having low conductivity. Therefore, it is desirable that the range be 20 μm or more, particularly 50 μm or more, 500 μm or less, particularly 200 μm or less. The distance T5 in the direction parallel to the penetration direction of the through hole 11 of the recess 21 is the same as the distance T1 between the insulating base 1 and the flange 13a in the space 17.

そして、鍔部13aの形状は上記した空間17を形成するものであればよい。なお、空隙15や空間17ならびに凹部21は金属体13を取り囲むように周状に形成されている形態や、不連続に形成されている形態であってもよいことはいうまでもない。   And the shape of the collar part 13a should just form the space 17 mentioned above. Needless to say, the gap 15, the space 17, and the recess 21 may be formed in a circumferential shape so as to surround the metal body 13 or may be formed discontinuously.

そして、図4(a)、(b)、図5(a)、(b)に示すように、以上説明した発光素子用配線基板23の搭載面9に発光素子27を搭載してなる発光装置31は、発光素子27が発生する熱を金属体13から速やかに放出することができるため、高輝度を実現できる。また、貫通孔11と金属体13の間に空隙15が存在することから、金属とセラミックスの熱膨張差による応力を緩和し、高い信頼性を得ることができる。そして、金属体13が鍔部13aに空間17および凹部21を有することから、封止樹脂35および金属体13をそれぞれ安定に固定することができる。   4A, 4B, 5A, and 5B, a light emitting device in which a light emitting element 27 is mounted on the mounting surface 9 of the light emitting element wiring substrate 23 described above. Since 31 can quickly release the heat generated by the light emitting element 27 from the metal body 13, high luminance can be realized. Moreover, since the space | gap 15 exists between the through-hole 11 and the metal body 13, the stress by the thermal expansion difference of a metal and ceramics can be relieve | moderated and high reliability can be acquired. And since the metal body 13 has the space 17 and the recessed part 21 in the collar part 13a, the sealing resin 35 and the metal body 13 can each be fixed stably.

また、この絶縁基体1として、Alを主結晶相とするAl質焼結体を用いた場合には、安価な原料を使用でき、安価な発光素子用配線基板11を得ることができる。 Further, when an Al 2 O 3 sintered body having Al 2 O 3 as a main crystal phase is used as the insulating base 1, an inexpensive raw material can be used, and an inexpensive light-emitting element wiring substrate 11 is obtained. be able to.

なお、Alを主結晶相とするAl質焼結体とは、例えば、X線回折によって、Alのピークが主ピークとして検出されるようなもので、Alの結晶を体積比率として、50体積%以上含有していることが望ましい。 Note that the Al 2 O 3 and Al 2 O 3 quality sintered body composed mainly crystalline phase, for example, by X-ray diffraction, is like the peak of Al 2 O 3 is detected as the main peak, Al 2 It is desirable to contain 50% or more by volume of O 3 crystals.

また、このような焼結体は、例えば、平均粒径1.0〜2.0μmの純度99%以上のAl粉末に、平均粒径1.0〜2.0μmのMn、SiO、MgO、SrO、CaOの群から選ばれる少なくとも1種の焼結助剤を添加した成形体を1300〜1600℃の温度範囲で焼成することによって得られるものである。 Moreover, such a sintered compact is made of, for example, Al 2 O 3 powder having an average particle diameter of 1.0 to 2.0 μm and a purity of 99% or more, and Mn 2 O 3 having an average particle diameter of 1.0 to 2.0 μm. , SiO 2 , MgO, SrO, and CaO, a molded body to which at least one kind of sintering aid is added is obtained by firing in a temperature range of 1300 to 1600 ° C.

そして、焼結助剤などのAl以外の組成物の添加量については、Alを主結晶とする緻密体を得るために、望ましくは15質量%以下、更に望ましくは、10質量%以下とすることが望ましい。特に、焼結助剤などのAl以外の組成物の添加量が15質量%以下とした場合には、得られる絶縁基体1の大部分をAl結晶により形成することができる。また、これらの焼結助剤は、焼成温度を低くするために5質量%以上、さらには7質量%以上添加することが望ましい。なお、絶縁基体1に用いるセラミックスとして、ガラスセラミックス、AlN、Si、ムライト、MgOなどを主結晶とする焼結体を用いても良い。 And, for the addition amount of Al 2 O 3 other than the compositions, such as sintering aids, in order to obtain a dense body of the Al 2 O 3 as a main crystal, preferably 15 wt% or less, more desirably, 10 It is desirable to set it as mass% or less. In particular, when the amount of a composition other than Al 2 O 3 such as a sintering aid is set to 15% by mass or less, most of the obtained insulating substrate 1 can be formed of Al 2 O 3 crystals. . These sintering aids are desirably added in an amount of 5% by mass or more, and more preferably 7% by mass or more in order to lower the firing temperature. As the ceramic used for the insulating substrate 1, a sintered body having a main crystal of glass ceramics, AlN, Si 3 N 4 , mullite, MgO, or the like may be used.

このようなAlを主成分とする組成物に、さらに、バインダ、溶剤を添加して、スラリーを作製し、例えば、ドクターブレード法により、シート状の成形体を作製し、さらに、その表面や、シート状の成形体に設けた貫通孔などに、少なくとも金属粉末を含有する導体ペーストを印刷、充填したのち、このシートを積層し、酸化雰囲気、還元雰囲気、あるいは不活性雰囲気で焼成することで、表面や内部に接続端子3、外部電極端子5や貫通導体7などの配線層が形成された発光素子用配線基板23を作製することができる。また、配線層は、薄膜法により絶縁基板1の表面に形成したり、金属箔を成形体の表面に転写するなどして形成できることはいうまでもない。 A binder and a solvent are further added to such a composition containing Al 2 O 3 as a main component to produce a slurry. For example, a sheet-like molded article is produced by a doctor blade method, After printing and filling a conductive paste containing at least metal powder on the surface or through-holes provided in the sheet-like molded body, this sheet is laminated and fired in an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere. Thereby, the wiring board 23 for light emitting elements in which wiring layers, such as the connection terminal 3, the external electrode terminal 5, and the penetration conductor 7, were formed in the surface or the inside, can be produced. Needless to say, the wiring layer can be formed on the surface of the insulating substrate 1 by a thin film method or by transferring a metal foil onto the surface of the molded body.

そして、このような絶縁基体1の表面あるいは内部に、接続端子3、外部電極端子5、貫通導体7、金属体13を形成することで、発光素子用配線基板23に配線回路を形成することができる。   Then, by forming the connection terminal 3, the external electrode terminal 5, the through conductor 7, and the metal body 13 on the surface or inside of the insulating base 1, a wiring circuit can be formed on the light emitting element wiring substrate 23. it can.

かかる金属体13は、鍔部13a、空間17および凹部21を金属塊のエッチング、または切削等により形成することができる。また、金属シートに所望の形状に貫通孔を形成し、これを複数層積層することによっても作製し、焼結することによっても形成することができる。このようにして作製した金属体13を、焼結した絶縁基体1にロウ材等を用いて接続部13bで接続する。ロウ材で接続した場合、ロウ剤はAuSnよりも高融点のため、発光素子の実装の際にAuSnを用いることができ、樹脂実装の場合よりも放熱性を高めることができる。また、発光素子を樹脂を用いて実装する場合には、金属体の接合にも樹脂を用いることができ、容易かつ安価な接合が可能である。   Such a metal body 13 can form the flange 13a, the space 17 and the recess 21 by etching or cutting a metal lump. It can also be formed by forming through holes in a desired shape in a metal sheet, laminating a plurality of layers, and sintering. The metal body 13 produced in this way is connected to the sintered insulating substrate 1 by a connecting portion 13b using a brazing material or the like. When connected with a brazing material, since the brazing agent has a higher melting point than AuSn, AuSn can be used when mounting the light emitting element, and heat dissipation can be improved as compared with resin mounting. Further, when the light emitting element is mounted using a resin, the resin can be used for joining the metal bodies, and easy and inexpensive joining is possible.

そして、これらの配線回路に用いる導体および貫通金属体13を、W、Mo、Cu、Agのうち少なくとも1種を主成分として形成することで、絶縁基体1と同時焼成して、接続端子3、外部電極端子5、貫通導体7、金属体13を形成することが可能となり、安価な発光素子用配線基板23を得ることができる。   Then, the conductor and the penetrating metal body 13 used in these wiring circuits are formed by using at least one of W, Mo, Cu, and Ag as a main component, so that they are simultaneously fired with the insulating base 1, and the connection terminals 3, The external electrode terminal 5, the through conductor 7, and the metal body 13 can be formed, and an inexpensive light emitting element wiring board 23 can be obtained.

また、接続端子3および金属体13の表面にNi、Au、AlやAgめっきを施すことにより、反射率を向上させ、発光素子が生じる光の取り出し効率を向上させることができる。   Further, by applying Ni, Au, Al, or Ag plating to the surfaces of the connection terminal 3 and the metal body 13, the reflectance can be improved and the light extraction efficiency generated by the light emitting element can be improved.

そして、図1(b)に示すような枠体20は、シート状の成形体を打ち抜き加工し、絶縁基体のシート積層体に積層し、同時焼成を行うことによって形成することができる。また、切削やエッチングによりAlやFe−Ni−Co合金等の金属を枠状に形成し、焼結した絶縁基体1にロウ剤や樹脂を用いて接着することも可能である。ロウ剤を用いて接着する場合には、絶縁基体1と枠体20の接着面に、金属ペーストを用いて金属層(図示せず)を形成しておくことが必要である。   And the frame 20 as shown in FIG.1 (b) can be formed by stamping a sheet-like molded object, laminating | stacking on the sheet | seat laminated body of an insulating base, and performing simultaneous baking. It is also possible to form a metal such as Al or Fe—Ni—Co alloy by cutting or etching into a frame shape and adhere the sintered insulating substrate 1 using a brazing agent or a resin. When bonding using a brazing agent, it is necessary to form a metal layer (not shown) using a metal paste on the bonding surface between the insulating substrate 1 and the frame 20.

そして、以上説明した本発明の発光素子用配線基板23に、例えば、図4、5に示すように発光素子27として、LEDチップなどを素子接合材33を用いて実装し、ボンディングワイヤ29により発光素子27に給電することにより、発光装置31を機能させることができる。   Then, for example, as shown in FIGS. 4 and 5, an LED chip or the like is mounted as the light emitting element 27 on the wiring board 23 for the light emitting element of the present invention described above using the element bonding material 33, and light is emitted by the bonding wire 29. By supplying power to the element 27, the light emitting device 31 can function.

また、発光素子27は、モールド樹脂である封止樹脂35により被覆されており、封止樹脂35は貫通孔11と金属体13の間に設けられた空隙15を満たし、さらには金属体鍔部13aに設けられた空間17をも満たす。また、封止樹脂35は、蓋体(図示せず)やレンズと併用してもよい。蓋体は、ガラス、樹脂などの透光性の素材を用いることが望ましい。   The light emitting element 27 is covered with a sealing resin 35 which is a mold resin, and the sealing resin 35 fills the gap 15 provided between the through hole 11 and the metal body 13, and further the metal body collar It also fills the space 17 provided in 13a. Further, the sealing resin 35 may be used in combination with a lid (not shown) or a lens. It is desirable to use a translucent material such as glass or resin for the lid.

なお、必要に応じて、この封止樹脂35に発光素子27が放射する光を波長変換するための蛍光体(図示せず)を添加してもよい。   In addition, you may add the fluorescent substance (not shown) for wavelength-converting the light which the light emitting element 27 radiates | emits to this sealing resin 35 as needed.

発光素子用配線基板23は熱放散性が良好であるため、発光装置31にはヒートシンク等の放熱部材が不要となり、実装される電気機器の小型化に寄与できる。なお、ヒートシンクを設けることで、更に放熱性が向上することはもちろんであり、例えば、ヒートシンクのような冷却装置を設けることを排除するものではない。   Since the light emitting element wiring substrate 23 has good heat dissipation, the light emitting device 31 does not require a heat radiating member such as a heat sink, and can contribute to the miniaturization of the electric device to be mounted. In addition, by providing a heat sink, it is needless to say that heat dissipation is further improved, and for example, provision of a cooling device such as a heat sink is not excluded.

なお、図4、5に示した例では、発光素子27は、素子接合材33により発光素子用配線基板23に固定され、電力の供給はボンディングワイヤ29によりなされているが、発光素子用配線基板23との接続形態は、フリップチップ接続であってもよいことはいうまでもない。   4 and 5, the light emitting element 27 is fixed to the light emitting element wiring substrate 23 by the element bonding material 33, and power is supplied by the bonding wire 29, but the light emitting element wiring substrate is used. Needless to say, the connection form with the terminal 23 may be flip-chip connection.

また、以上説明した例では、貫通導体7を設けた例について説明したが、貫通導体7を設けない場合であってもよく、また、絶縁基体1が多層に積層されている形態であってもよいことは勿論である。   In the example described above, the example in which the through conductor 7 is provided has been described. However, the through conductor 7 may not be provided, and the insulating base 1 may be laminated in multiple layers. Of course it is good.

発光素子用配線基板23の絶縁基体1の原料粉末として純度99%以上、平均粒径1.5μm、純度99%以上のAl粉末90重量%、平均粒子径1.5μm、純度99%以上のMn粉末5重量%、平均粒径1.5μm、純度99%以上のSiO粉末5重量%の比率で混合し、原料粉末に対して成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。しかる後に、ドクターブレード法にてAlを主成分とするグリーンシートを作製した。 The raw material powder of the insulating substrate 1 of the wiring substrate 23 for light emitting elements is a purity of 99% or more, an average particle diameter of 1.5 μm, an Al 2 O 3 powder of 99% or more of purity of 90% by weight, an average particle diameter of 1.5 μm, and a purity of 99%. The above Mn 2 O 3 powder 5% by weight, average particle size 1.5 μm, purity of 99% or more of SiO 2 powder 5% by weight is mixed, and the raw material powder is an acrylic resin as a molding organic resin (binder). A binder and toluene were mixed as a solvent to prepare a slurry. Thereafter, a green sheet mainly composed of Al 2 O 3 was prepared by a doctor blade method.

導体ペーストは、平均粒子径2.0μmのW粉末70質量%、平均粒子径2.0μmのCu粉末30質量%、成形用有機樹脂としてアクリル系バインダおよび溶媒としてアセトンを混合した後、減圧加熱によりアセトンを取り除いて作製した。   The conductive paste was prepared by mixing 70% by weight of W powder having an average particle size of 2.0 μm, 30% by weight of Cu powder having an average particle size of 2.0 μm, an acrylic binder as an organic resin for molding, and acetone as a solvent, followed by heating under reduced pressure. It was prepared by removing acetone.

次に、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、貫通孔および直径が100μmのビアホールを形成した。ビアホール内には、導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状に印刷塗布し、積層した。また、枠体25となるセラミックグリーンシートの所定位置に打ち抜き加工を施し、前記積層体と積層圧着した。   Next, the ceramic green sheet was punched to form a through hole and a via hole having a diameter of 100 μm. The via hole was filled with a conductive paste by a screen printing method, printed and applied in a wiring pattern, and laminated. Further, a punching process was applied to a predetermined position of the ceramic green sheet to be the frame body 25, and the laminated body was laminated and pressure-bonded.

そして、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、露点+25℃の窒素水素混合雰囲気にて1300℃の最高温度で2時間焼成し、配線回路を備えた絶縁基体1を作製した。   Then, after degreasing in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., the insulating substrate 1 provided with a wiring circuit is subsequently baked at a maximum temperature of 1300 ° C. for 2 hours in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C. Produced.

次に、エッチング処理によって作製した銅製の金属体13の鍔部13aのうち接続部13bに共晶Ag−Cuロウを塗布して絶縁基体1の貫通孔11に位置合わせし、850℃でリフローすることにより、絶縁基体1と金属体13を接続した。   Next, eutectic Ag-Cu solder is applied to the connection portion 13b of the flange portion 13a of the copper metal body 13 produced by the etching process, aligned with the through hole 11 of the insulating base 1, and reflowed at 850 ° C. As a result, the insulating base 1 and the metal body 13 were connected.

この絶縁基体1の形状は、外形8mm×8mm×厚さ0.7mm、枠体25は、幅0.7mm×厚さ0.8mmとした。また、金属体13の形状は、金属体全体の厚みを1.2mmとし、搭載面側の端面がφ3mmの円状とし、鍔部13a側の端面がφ6mmの円状とし、鍔部13aの主面から空間17までの距離T3が0.25mm、空隙15の形状は、幅L0.4mm、空間17の形状は、幅T2 0.5mm×深さT1 0.25mm、接続部13bの幅0.6mmとした。   The shape of the insulating substrate 1 was 8 mm × 8 mm × 0.7 mm thickness, and the frame 25 was 0.7 mm wide × 0.8 mm thick. The shape of the metal body 13 is such that the entire thickness of the metal body is 1.2 mm, the end surface on the mounting surface side is a circle having a diameter of 3 mm, the end surface on the side of the flange 13a is a circle having a diameter of 6 mm, and the main surface of the flange 13a is The distance T3 from the surface to the space 17 is 0.25 mm, the shape of the gap 15 is a width L0.4 mm, the shape of the space 17 is a width T2 0.5 mm × depth T1 0.25 mm, and the width of the connection portion 13b is 0. It was 6 mm.

そして、絶縁基体1の搭載面9側の主面1aと金属体13の搭載面9側の主面とが略同一面となるようにし、金属体13の鍔部13a側の端面が絶縁基体1の他方の主面1bから0.5mm突出するようにした。   The main surface 1a on the mounting surface 9 side of the insulating substrate 1 and the main surface on the mounting surface 9 side of the metal body 13 are substantially the same surface, and the end surface on the flange 13a side of the metal body 13 is the insulating substrate 1. It protruded 0.5 mm from the other main surface 1b.

そして、この絶縁基体1の表面に形成した配線と金属体13の表面に、NiめっきおよびAgめっきを順次施して、本発明の発光素子用配線基板23を作製した。   Then, the wiring formed on the surface of the insulating substrate 1 and the surface of the metal body 13 were sequentially subjected to Ni plating and Ag plating, thereby producing the wiring board 23 for the light emitting element of the present invention.

また、比較例として、以下に示す絶縁基体と金属体とを用いて、空隙15および空間17のない本発明の範囲外の発光素子用配線基板を作製した。この比較例に用いた絶縁基体の形状を、外形8mm×8mm×高さ0.7mmとし、枠体の形状を、幅0.7mm×高さ0.8mmとした。また用いた金属体の形状を、金属体全体の厚みを1.2mmとし、搭載面側の端面をφ3mmの円状とし、鍔部側の端面をφ6mmの円状とした。   In addition, as a comparative example, a wiring board for a light emitting element outside the scope of the present invention without the gap 15 and the space 17 was produced using the following insulating base and metal body. The shape of the insulating base used in this comparative example was 8 mm × 8 mm × 0.7 mm in height, and the shape of the frame was 0.7 mm in width × 0.8 mm in height. The metal body used was shaped such that the thickness of the entire metal body was 1.2 mm, the end surface on the mounting surface side was a circle of φ3 mm, and the end surface on the collar side was a circle of φ6 mm.

この比較例においては、絶縁基体と金属体との接合は金属体の側面ならびに、絶縁体と接続される鍔部に共晶Ag−Cuロウを塗布して絶縁基体の貫通孔に位置合わせし、850℃でリフローすることにより、絶縁基体と金属体とを接続した。また、比較例の試料においても、本発明の場合と同様にNiめっきおよびAgめっきを順次施して発光素子用配線基板を作製した。   In this comparative example, the bonding between the insulating substrate and the metal body is performed by applying eutectic Ag-Cu solder on the side surfaces of the metal body and the flanges connected to the insulator to align with the through holes of the insulating substrate, By reflowing at 850 ° C., the insulating substrate and the metal body were connected. Moreover, also in the sample of the comparative example, similarly to the case of the present invention, Ni plating and Ag plating were sequentially performed to produce a light emitting element wiring board.

そして、本発明の発光素子用配線基板23ならびに比較例として作製した発光素子用配線基板に素子接合剤33としてAuSnを用いて発光素子であるLEDチップを搭載面9に実装し、枠体25にエポキシ樹脂からなる封止樹脂35を注入し、エポキシ樹脂を硬化させて、本発明の発光装置31ならびに比較例の発光装置を得た。   Then, an LED chip, which is a light emitting element, is mounted on the mounting surface 9 using AuSn as the element bonding agent 33 on the light emitting element wiring substrate 23 of the present invention and the light emitting element wiring substrate manufactured as a comparative example. A sealing resin 35 made of an epoxy resin was injected and the epoxy resin was cured to obtain the light emitting device 31 of the present invention and the light emitting device of the comparative example.

その際、本発明の試料には絶縁基体1と金属体13間の空隙15および鍔部13aに設けられた空間17ならびに連通部19に封止樹脂35が充填されるようにした。   At that time, in the sample of the present invention, the gap 15 between the insulating base 1 and the metal body 13, the space 17 provided in the flange portion 13 a and the communication portion 19 were filled with the sealing resin 35.

得られた本発明の発光装置31ならびに比較例の発光装置に対して、−40℃〜125℃の温度サイクル試験を100サイクル行った。その後、発光装置の封止樹脂の1mm□の範囲に接着剤を用いて金具を接着した。なお、接着の際には、マスキングテープを用いて接着剤が1mm□を超えて広がらないようにした。そして、この金具を上方に引っ張り速度0.5mm/minの条件で引き上げ、引張り試験を行った。そして、引っ張り荷重が0.005Nを超えたものを合格と判定した。実施例、比較例ともに20個ずつ試験をしたところ、比較例では13個の封止樹脂が剥離したが、実施例の封止樹脂に剥離は見られなかった。   The obtained light emitting device 31 of the present invention and the light emitting device of the comparative example were subjected to a temperature cycle test of −40 ° C. to 125 ° C. for 100 cycles. Thereafter, the metal fittings were bonded using an adhesive in the range of 1 mm □ of the sealing resin of the light emitting device. In adhering, a masking tape was used to prevent the adhesive from spreading beyond 1 mm □. And this metal fitting was pulled up on the conditions of the pulling speed of 0.5 mm / min, and the tension test was done. And what the tensile load exceeded 0.005N was determined to be acceptable. When 20 examples were tested in both the example and the comparative example, 13 sealing resins were peeled in the comparative example, but no peeling was observed in the sealing resin of the example.

以上、説明したように、本発明により封止樹脂の剥離を防止でき、しかも金属体により熱放散性の優れた発光装置が得られた。   As described above, according to the present invention, it was possible to prevent peeling of the sealing resin and to obtain a light emitting device having excellent heat dissipation by the metal body.

(a)は、発光素子用配線基板を示す断面図であり、(b)は、枠体を設けた形態の発光素子用配線基板を示す断面図である。(A) is a sectional view showing a wiring board for emitting optical element, (b) are sectional views showing the form of a light emission element wiring substrate provided with a frame. 本発明の発光素子用配線基板の他の形態を示す断面図である。It is sectional drawing which shows the other form of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の要部拡大断面図である。It is a principal part expanded sectional view of the wiring board for light emitting elements of this invention. (a)は、発光装置を示す断面図であり、(b)は、枠体を設けた形態の発光装置を示す断面図である。(A) is a sectional view showing a light emission device, (b) are sectional views showing a light emission device in a form provided with the frame. (a)は、凹部を備えた本発明の発光装置を示す断面図であり、(b)は、凹部と枠体とを設けた形態の本発明の発光装置を示す断面図である。(A) is sectional drawing which shows the light-emitting device of this invention provided with the recessed part, (b) is sectional drawing which shows the light-emitting device of this invention of the form which provided the recessed part and the frame.

符号の説明Explanation of symbols

1・・・絶縁基体
3・・・接続端子
5・・・外部電極端子
7・・・貫通導体
9・・・搭載面
11・・・貫通孔
13・・・金属体
13a・・・鍔部
13b・・・接続部
15・・・空隙
17・・・空間
19・・・連通部
20・・・枠体
21・・・凹部
23・・・配線基板
27・・・発光素子
29・・・ボンディングワイヤ
31・・・発光装置
33・・・素子接合材
35・・・封止樹脂
DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 3 ... Connection terminal 5 ... External electrode terminal 7 ... Through-conductor 9 ... Mounting surface 11 ... Through-hole 13 ... Metal body 13a ... ridge part 13b ... Connection part 15 ... Gap 17 ... Space 19 ... Communication part 20 ... Frame 21 ... Recess 23 ... Wiring board 27 ... Light emitting element 29 ... Bonding wire 31 ... Light emitting device 33 ... Element bonding material 35 ... Sealing resin

Claims (3)

セラミックスからなる平板状の絶縁基体に配線が形成され、前記絶縁基体を貫通して設けられた貫通孔に、前記絶縁基体よりも高い熱伝導率を有し、一方の端部に前記貫通孔よりも大きな鍔部が形成され、該鍔部が形成された端面と反対の端面に発光素子を搭載する搭載面が形成された金属体が、前記貫通孔との間に空隙をもって挿入されているとともに、前記絶縁基体に前記金属体が前記鍔部で接続されて前記鍔部と前記絶縁基体の主面との間に空間が形成されており、かつ前記空間と前記空隙とが連通部を介して連通しており、前記金属体の側面には、前記空隙および前記連通部の少なくとも1つと連通する凹部が形成されていることを特徴とする発光素子用配線基板。 Wiring is formed on a flat insulating substrate made of ceramics, and a through hole provided through the insulating substrate has a higher thermal conductivity than the insulating substrate, and at one end than the through hole. And a metal body having a mounting surface on which a light emitting element is mounted on the end surface opposite to the end surface where the flange portion is formed is inserted with a gap between the through hole. The metal body is connected to the insulating base at the flange, so that a space is formed between the flange and the main surface of the insulating base, and the space and the gap are connected via a communicating portion. A wiring board for a light-emitting element , wherein a recess is formed in communication with at least one of the gap and the communication portion on a side surface of the metal body . 前記凹部が前記空間と対向して前記連通部と連通していることを特徴とする請求項1に記載の発光素子用配線基板。 The wiring board for a light emitting element according to claim 1, wherein the concave portion is in communication with the communication portion so as to face the space. 請求項またはに記載の発光素子用配線基板の前記搭載面に発光素子が搭載され、封止樹脂が前記発光素子を覆うように配置されているとともに、前記封止樹脂が前記空隙と前記空間と前記凹部と前記連通部とに一体的に充填されていることを特徴とする発光装置。 Claim 1 or 2 light-emitting element is mounted on the mounting surface of the wiring substrate for light-emitting element according to, Tei Rutotomoni are arranged such sealing resin covering the light emitting element, the sealing resin and the space above A light emitting device , wherein the space, the concave portion, and the communication portion are integrally filled.
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