JP2007149810A - Wiring board for light-emitting element, and light-emitting device - Google Patents

Wiring board for light-emitting element, and light-emitting device Download PDF

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JP2007149810A
JP2007149810A JP2005339877A JP2005339877A JP2007149810A JP 2007149810 A JP2007149810 A JP 2007149810A JP 2005339877 A JP2005339877 A JP 2005339877A JP 2005339877 A JP2005339877 A JP 2005339877A JP 2007149810 A JP2007149810 A JP 2007149810A
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light
emitting element
light emitting
wiring board
main surface
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JP2007149810A5 (en
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Minako Izumi
美奈子 泉
Tomohide Hasegawa
智英 長谷川
Yasuhiro Sasaki
康博 佐々木
Noriaki Hamada
紀彰 浜田
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board for light-emitting elements that simultaneously realizes light transmission prevention effect, miniaturization/thinning, and high reflection factor. <P>SOLUTION: The wiring board 11 for light-emitting elements comprises a flat insulating substrate 3, where at least two insulating layers 1 are laminated; at least three layers of conductive layers 5 formed on the surface of the insulating layer 1; a mounting section 7, that is formed on one main surface of the insulating substrate 3 and mounts a light-emitting element 17; and a feed-through conductor 9, that is formed through the insulating layer 1 and is electrically connected to the light-emitting element 17. In the wiring board 11 for light-emitting elements, exposed section 3b of the insulating substrate 3, exposed to the other main surface 11b from an exposed section 3a of the insulating substrate 3 exposed to one main surface 11a of the wiring board 11 for light-emitting elements, when the insulating substrate 3 is seen through, is cut off by the insulating layer and cannot be seen through. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、発光素子または受光素子を搭載するための発光素子用配線基板およびこれを用いた発光装置に関する。   The present invention relates to a light emitting element wiring board for mounting a light emitting element or a light receiving element, and a light emitting device using the same.

発光素子においては、光が配線基板の裏面や周囲に漏れることにより指向性が損なわれること、受光素子においては、外部からの不要光による誤作動を起こすこと、を防止するために、発光ダイオード（ＬＥＤ）等の発光素子またはＣＣＤ、ＣＭＯＳ、イメージセンサ等の受光素子を搭載する配線基板には遮光性が要求される。   In the light emitting element, in order to prevent the directivity from being lost due to light leaking to the back surface or the periphery of the wiring board, and in the light receiving element, a light emitting diode (in order to prevent malfunction due to unnecessary light from the outside) A light-shielding property is required for a wiring board on which a light-emitting element such as LED) or a light-receiving element such as a CCD, CMOS, or image sensor is mounted.

例えば、受光素子用光透過防止配線基板としては、黒色系と白色系の材料を組み合わせた試みがなされ、具体的には、素子搭載部には高純度・高熱伝導率である白色系窒化アルミニウムを基板のベースとして使用し、その他ベース周辺部には光透過防止体として黒色系窒化アルミニウムを使用した例が報告されている（例えば、特許文献１参照）。   For example, an attempt has been made to combine black and white materials as a light transmission preventing wiring board for a light receiving element. Specifically, white aluminum nitride having high purity and high thermal conductivity is used for the element mounting portion. There has been reported an example in which black aluminum nitride is used as a base of a substrate and a light transmission preventer is used in the periphery of the base (see, for example, Patent Document 1).

また、他の例として、光透過防止体として着色アルミナを配線基板のベースとして用い、その外部に反射性の白色アルミナを配する例が報告されている（例えば、特許文献２参照）。   As another example, there has been reported an example in which colored alumina is used as a base of a wiring board as a light transmission preventing body, and reflective white alumina is arranged outside thereof (see, for example, Patent Document 2).

さらに、発光素子収納用パッケージの発光素子を搭載する側の主面のうち、配線層が形成されず絶縁層が露出した領域と重なるように、発光素子収納用パッケージの逆の主面に板部材を接合した例も報告されている（例えば、特許文献３参照）。
特開平０１−０８９５４６号公報 特開２００５−１５８９６４号公報 特開２００４−２８８６５７号公報 Further, a plate member is placed on the opposite main surface of the light emitting element storage package so that the wiring layer is not formed and the insulating layer is exposed in the main surface of the light emitting element storage package on the side where the light emitting element is mounted. An example in which is bonded is also reported (see, for example, Patent Document 3).
Japanese Patent Laid-Open No. 01-089546 JP 2005-158964 A JP 2004-288657 A

しかしながら、特許文献１、２に記載されているように、セラミックスを用いて光透過防止体を形成する場合、セラミックスの透光性を打ち消すために一定以上の厚みが必要であるために、発光素子用配線基板の小型化が困難であるという問題があった。   However, as described in Patent Documents 1 and 2, when a light transmission preventing body is formed using ceramics, a thickness of a certain level or more is required to cancel the translucency of ceramics. There was a problem that it was difficult to reduce the size of the wiring board for use.

また、特許文献３に記載の方法では、発光素子収納用パッケージの小型化と、遮光性の向上を図ることができるものの、発光素子の出力の増加により、充分な効果が得られなくなっている。   Further, although the method described in Patent Document 3 can reduce the size of the light-emitting element storage package and improve the light-shielding property, a sufficient effect cannot be obtained due to an increase in the output of the light-emitting element.

したがって、本発明の目的は充分な光透過防止と小型・薄型化を同時に実現する発光素子用配線基板ならびに発光装置を提供することである。   Accordingly, an object of the present invention is to provide a light-emitting element wiring board and a light-emitting device that simultaneously realize sufficient light transmission prevention and miniaturization and thickness reduction.

本発明の発光素子用配線基板は、２層以上の絶縁層を積層してなる平板状の絶縁基体と、前記絶縁層の表面に形成された３層以上の導体層と、前記絶縁基体の一方の主面に形成され、発光素子を搭載する搭載部と、前記絶縁層を貫通して形成され、前記発光素子と電気的に接続される貫通導体と、を具備してなる発光素子用配線基板であって、前記絶縁基体を透視したときに該発光素子用配線基板の一方の主面に露出した前記絶縁基体の露出部から、他方の主面に露出した前記絶縁基体の露出部が前記絶縁層で遮断されて見通せないことを特徴とする。   A wiring board for a light-emitting element according to the present invention includes a flat insulating substrate formed by laminating two or more insulating layers, three or more conductor layers formed on the surface of the insulating layer, and one of the insulating substrates. A wiring board for a light emitting device, comprising: a mounting portion on which the light emitting device is mounted; and a through conductor formed through the insulating layer and electrically connected to the light emitting device. The exposed portion of the insulating base exposed on the other main surface is exposed from the exposed portion of the insulating base exposed on one main surface of the light emitting element wiring board when the insulating base is seen through. It is blocked by a layer and cannot be seen.

本発明の発光装置は、以上説明した発光素子用配線基板の前記搭載部に発光素子を搭載していることを特徴とする。   The light-emitting device of the present invention is characterized in that a light-emitting element is mounted on the mounting portion of the light-emitting element wiring board described above.

本発明の発光素子用配線基板は、３層以上の導体層を、発光素子用配線基板の一方の主面の絶縁基板の露出部から、発光素子用配線基板の他方の主面の絶縁基板の露出部を見通せないように配設することで、光の透過経路を非直線とすることができる。   The wiring board for a light emitting element of the present invention has three or more conductor layers from the exposed part of the insulating substrate on one main surface of the wiring board for light emitting element to the insulating substrate on the other main surface of the wiring board for light emitting element. By disposing the exposed portion so as not to see through, the light transmission path can be made non-linear.

そのため、光は発光素子用配線基板の中を透過しようとしても導体層に阻まれてしまい、格段に遮光性に優れた発光素子用配線基板となる。   Therefore, even if light is transmitted through the light emitting element wiring substrate, the light is blocked by the conductor layer, and the light emitting element wiring substrate is remarkably excellent in light shielding property.

このような発光素子用配線基板に発光素子を搭載した本発明の発光装置は、格段に高い遮光性を備え、しかも小型化することもできるため、小型で、遮光性に優れた発光装置となる。   The light-emitting device of the present invention in which the light-emitting element is mounted on such a light-emitting element wiring substrate has a significantly high light-shielding property and can be downsized, so that the light-emitting device is small and excellent in light-shielding property. .

本発明の発光素子用配線基板は、例えば、図１（ａ）に示すように、複数の絶縁層１ａ、１ｂを積層してなる平板状の絶縁基体３と、絶縁層１の表面に配設された３層以上の導体層５ａ、５ｂ、５ｃと、発光素子を搭載するための搭載部７と、絶縁層１を貫通して形成され、発光素子と電気的に接続される貫通導体９ａ、９ｂとを備えている。   For example, as shown in FIG. 1A, the wiring board for a light emitting element of the present invention is provided on a flat insulating base 3 formed by laminating a plurality of insulating layers 1 a and 1 b and on the surface of the insulating layer 1. Three or more conductor layers 5a, 5b, 5c, a mounting portion 7 for mounting the light emitting element, a through conductor 9a formed through the insulating layer 1 and electrically connected to the light emitting element, 9b.

そして、本発明の発光素子用配線基板１１は、絶縁基体３を透視しても、搭載部７が形成された側の発光素子用配線基板１１の主面１１ａに露出した絶縁基体３の主面３ａから、他方の発光素子用配線基板１１の主面１１ｂに露出した絶縁基体３の主面３ｂが見通せないように、導体層５ならびに貫通導体９が配設されていることが重要である。   And even if the insulating substrate 3 is seen through, the light emitting element wiring substrate 11 of the present invention is exposed to the main surface 11a of the light emitting element wiring substrate 11 on the side where the mounting portion 7 is formed. It is important that the conductor layer 5 and the through conductor 9 are disposed so that the main surface 3b of the insulating base 3 exposed to the main surface 11b of the other light emitting element wiring substrate 11 cannot be seen from 3a.

言い換えると、例えば、絶縁基体３が透明であったとしても、発光素子用配線基板１１の一方の主面１１ａから他方の主面１１ｂが見えないように導体層５ならびに貫通導体９を配設することが重要で、これにより、発光素子からの光が直進して発光素子用配線基板１１を透過することが不可能となり、高い遮光性を備えた発光素子用配線基板１１となる。   In other words, for example, even if the insulating base 3 is transparent, the conductor layer 5 and the through conductor 9 are arranged so that the other main surface 11b cannot be seen from the one main surface 11a of the light emitting element wiring substrate 11. It is important that the light from the light emitting element goes straight and cannot pass through the light emitting element wiring substrate 11, and the light emitting element wiring substrate 11 having high light shielding properties is obtained.

このような形態の発光素子用配線基板１１は、例えば、図１（ｂ）に示すように、搭載部７が形成された側の発光素子用配線基板１１の主面１１ａに露出した絶縁基体３の主面３ａと、他方の発光素子用配線基板１１の主面１１ｂに露出した絶縁基体３の主面３ｂとを直線で結ぶ領域を遮断するように導体層５ｂならびに貫通導体９を配設することで実現することができる。   For example, as shown in FIG. 1B, the light-emitting element wiring substrate 11 having such a configuration has an insulating base 3 exposed on the main surface 11 a of the light-emitting element wiring substrate 11 on the side where the mounting portion 7 is formed. The conductor layer 5b and the through conductor 9 are disposed so as to block the region connecting the main surface 3a of the first light emitting element and the main surface 3b of the insulating base 3 exposed on the main surface 11b of the other light emitting element wiring substrate 11 with a straight line. Can be realized.

さらに、光が散乱しながら絶縁層１を透過することを考慮すると、光の透過経路は長い方が望ましいため、１層の絶縁層１を挟んで配設された導体層５の縁は互いに逆方向から延設され、重なり合うように形成されていることが望ましい。   Furthermore, considering that light is transmitted through the insulating layer 1 while being scattered, it is desirable that the light transmission path is long. Therefore, the edges of the conductor layer 5 disposed with the insulating layer 1 in between are opposite to each other. It is desirable to extend from the direction and to overlap.

また、絶縁層１の主面のうち、導体層５が形成されていない領域を経由して、光が透過することを考慮すると、絶縁層１の主面を占める導体層５の割合を大きくすることが望ましく、各絶縁層１の主面のうち、７０％以上の領域に導体層５を配設することが望ましく、特に、８０％以上、さらに９０％以上の領域に導体層５を配設することが望ましい。   Further, considering that light is transmitted through a region where the conductor layer 5 is not formed in the main surface of the insulating layer 1, the ratio of the conductor layer 5 occupying the main surface of the insulating layer 1 is increased. Desirably, the conductor layer 5 is preferably disposed in a region of 70% or more of the main surface of each insulating layer 1, and in particular, the conductor layer 5 is disposed in a region of 80% or more, and further 90% or more. It is desirable to do.

これらの導体層５ならびに貫通導体９は、電気的な機能を備えていないものであってもよく、専ら、光を遮断するためにのみ配設されたものであってもよいのはいうまでもない。   It goes without saying that the conductor layer 5 and the through conductor 9 may not have an electrical function, and may be provided only to block light. Absent.

また、図２に示すように、搭載部７の直下に絶縁基体３を貫通するように貫通金属体１３を形成した場合には、発光素子からの熱を効率的に発光素子用配線基板１１の他方の主面１１ｂに伝搬することができる。発光素子用配線基板１１の主面１１ａに垂直な方向から見た貫通金属体１３の断面積は搭載される発光素子の同方向から見たときの断面積よりも大きくすることが放熱性の点から望ましい。   In addition, as shown in FIG. 2, when the through metal body 13 is formed so as to penetrate the insulating base 3 immediately below the mounting portion 7, the heat from the light emitting element is efficiently transferred to the wiring board 11 for the light emitting element. It can propagate to the other main surface 11b. It is heat dissipation that the cross-sectional area of the through metal body 13 viewed from the direction perpendicular to the main surface 11a of the light-emitting element wiring substrate 11 is larger than the cross-sectional area viewed from the same direction of the mounted light-emitting element. Is desirable.

このような貫通金属体１３は、導体層５や貫通導体９と同様に光を遮断する機能を有するもので、貫通金属体１３と導体層５ならびに貫通導体９を組み合わせて、発光素子用配線基板１１の一方の主面１１ａから他方の主面１１ｂに光が直進的に透過しないようにすることで、小型で、遮光性に優れ、しかも放熱性に優れた発光素子用配線基板１１となる。   Such a penetrating metal body 13 has a function of blocking light in the same manner as the conductor layer 5 and the penetrating conductor 9. The penetrating metal body 13, the conductor layer 5, and the penetrating conductor 9 are combined to form a wiring board for a light emitting element. By preventing light from being transmitted straight from one main surface 11a to the other main surface 11b, the light-emitting element wiring substrate 11 is small in size, excellent in light shielding properties, and excellent in heat dissipation.

また、発光素子用配線基板１１の一方の主面１１ａには、搭載部７を取り囲むように枠体１５が形成されていてもよく、この枠体１５により搭載される発光素子を容易に保護することができる。また、発光素子を覆うように封止樹脂を配設する場合には封止樹脂の流れだしを防止できる。   Further, a frame 15 may be formed on one main surface 11a of the light emitting element wiring substrate 11 so as to surround the mounting portion 7, and the light emitting element mounted by the frame 15 is easily protected. be able to. Further, when the sealing resin is disposed so as to cover the light emitting element, it is possible to prevent the sealing resin from flowing out.

また、枠体１５の内側面１５ａの反射率を高くした場合には、発光素子からの光を任意の方向に誘導することもできる。   In addition, when the reflectance of the inner side surface 15a of the frame 15 is increased, light from the light emitting element can be guided in an arbitrary direction.

この枠体１５が、遮光性を有する場合には、絶縁基体３の露出した露出した主面３ａの面積を減少させることもできる。   When the frame 15 has light shielding properties, the exposed area of the exposed main surface 3a of the insulating base 3 can be reduced.

本発明の発光素子用配線基板１１の絶縁層１として、例えば、樹脂系の絶縁層１や、セラミック系の絶縁層１を用いることができる。   As the insulating layer 1 of the light emitting element wiring substrate 11 of the present invention, for example, a resin-based insulating layer 1 or a ceramic-based insulating layer 1 can be used.

樹脂系の絶縁層１は、安価である点で有利である。一方、セラミック系の絶縁層１は、熱伝導率が高い点で有利である。また、セラミック系の絶縁層１では、特に高い熱伝導率を有することから、窒化アルミニウムや窒化珪素を主成分とする材料が好適に用いられる。また、安価である点ではアルミナを主成分とする材料が好適に用いられる。また、その他にも酸化マグネシウムを主成分とするものや、いわゆるガラスセラミックスを絶縁層１として用いてもよい。   The resin-based insulating layer 1 is advantageous in that it is inexpensive. On the other hand, the ceramic insulating layer 1 is advantageous in that it has a high thermal conductivity. In addition, since the ceramic insulating layer 1 has a particularly high thermal conductivity, a material mainly composed of aluminum nitride or silicon nitride is preferably used. Moreover, the material which has an alumina as a main component is used suitably from the point of being cheap. In addition, a material mainly composed of magnesium oxide or a so-called glass ceramic may be used as the insulating layer 1.

また、絶縁層１の色は、反射率を高くする点から白色であることが望ましい。なお、白色とは所謂着色剤を添加しない場合に得られるアルミナなどのセラミックの色をさしている。また、遮光性を向上させる観点からは、黒色に近いものであってもよい。   The color of the insulating layer 1 is preferably white from the viewpoint of increasing the reflectance. White refers to the color of ceramic such as alumina obtained when a so-called colorant is not added. Further, from the viewpoint of improving the light shielding property, it may be close to black.

また、導体層５としては、従来周知の金属箔や、導体ペーストから形成することができる。また、めっきなどの技術を用いて形成してもよい。この導体層５の材質は、金属箔としては低抵抗であることから銅を用いることが望ましく、金属ペーストを用いてセラミック系の絶縁層１と同時焼成する場合は絶縁層１の材質にあわせて、ＣｕやＡｇ、Ｗ、Ｍｎ、Ｍｏなどの材質から適宜選択すればよい。特に、搭載部７側の主面１１ａに配設された導体層５の表面には、反射率を向上させるために、ＮｉやＡｇなどの金属をめっきすることが望ましい。   The conductor layer 5 can be formed from a conventionally known metal foil or conductor paste. Moreover, you may form using techniques, such as plating. The material of the conductor layer 5 is preferably copper because it has a low resistance as a metal foil. When the metal layer is fired simultaneously with the ceramic insulating layer 1 according to the material of the insulating layer 1. , Cu, Ag, W, Mn, Mo or the like may be selected as appropriate. In particular, the surface of the conductor layer 5 disposed on the main surface 11a on the mounting portion 7 side is preferably plated with a metal such as Ni or Ag in order to improve the reflectance.

また、貫通導体９や貫通金属体１３も、導体層５と同様に従来周知の技術を用いて作製することができる。   Further, the through conductor 9 and the through metal body 13 can also be produced by using a conventionally known technique in the same manner as the conductor layer 5.

そして、図３に示すように、例えば、本発明の発光素子用配線基板１１の搭載部７に発光素子１７を接着層１９を介して搭載し、発光素子１７の電極（図示せず）と、貫通導体９と電気的に接続された、搭載部７側の発光素子用配線基板１１の主面１１ａに配設された導体層５ａとをワイヤ２１を介して接続し、発光素子１７やワイヤ２１を覆うように封止樹脂２３を形成することで本発明の発光装置２５となる。   Then, as shown in FIG. 3, for example, the light emitting element 17 is mounted on the mounting portion 7 of the light emitting element wiring substrate 11 of the present invention via the adhesive layer 19, and an electrode (not shown) of the light emitting element 17 is formed. The conductor layer 5a disposed on the main surface 11a of the light emitting element wiring substrate 11 on the mounting portion 7 side, which is electrically connected to the through conductor 9, is connected via the wire 21, and the light emitting element 17 and the wire 21 are connected. By forming the sealing resin 23 so as to cover the light emitting device 25, the light emitting device 25 of the present invention is obtained.

このような発光装置２５は、遮光性に優れ、しかも小型化が可能なものである。そして、絶縁層１や導体層５の材質を適宜選択することで、放熱性や発光効率の優れた発光装置２５となる。   Such a light emitting device 25 has excellent light shielding properties and can be downsized. And it becomes the light-emitting device 25 excellent in heat dissipation and luminous efficiency by selecting the material of the insulating layer 1 and the conductor layer 5 suitably.

なお、図３の例では発光素子２１と導体層５ａとをワイヤ２１で接続しているが、両者の間にハンダバンプなどを介在させ、いわゆるフリップチップ接続させてもよいことはいうまでもない。   In the example of FIG. 3, the light emitting element 21 and the conductor layer 5 a are connected by the wire 21, but it goes without saying that a solder bump or the like may be interposed between the light emitting element 21 and the conductor layer 5 a to make a so-called flip chip connection.

また、封止樹脂２３は、エポキシ樹脂やシリコーン樹脂を用いて形成することができる。そして、これらの樹脂に発光素子１７から出る光を波長変換する蛍光体（図示せず）を分散させてもよい。   The sealing resin 23 can be formed using an epoxy resin or a silicone resin. And you may disperse | distribute the fluorescent substance (not shown) which wavelength-converts the light emitted from the light emitting element 17 in these resin.

次に、絶縁層１としてセラミック系の絶縁層１を用いた場合の本発明の発光素子用配線基板１１ならびに発光装置２５の製造方法について、具体的に説明する。   Next, the manufacturing method of the light emitting element wiring substrate 11 and the light emitting device 25 of the present invention when the ceramic insulating layer 1 is used as the insulating layer 1 will be specifically described.

例えば、まず、原料粉末を準備する。平均粒径０．５〜５．０μｍの純度９９％以上のＡｌ２Ｏ３粉末に、平均粒径０．５〜９．０μｍのＭｎ２Ｏ３、ＳｉＯ２、ＭｇＯ、ＣａＯの群から選ばれる少なくとも１種を焼結助剤として用いる。焼結助剤は酸化物粉末以外に、焼成によって酸化物を形成し得る炭酸塩、硝酸塩、酢酸塩等として添加してもよい。 For example, first, raw material powder is prepared. Al 2 O 3 powder with an average particle size of 0.5-5.0 μm and purity of 99% or more is selected from the group of Mn 2 O 3 , SiO 2 , MgO, CaO with an average particle size of 0.5-9.0 μm. At least one kind is used as a sintering aid. In addition to the oxide powder, the sintering aid may be added as carbonate, nitrate, acetate or the like that can form an oxide by firing.

上記の粉末を混合し、バインダ、溶剤を添加して、スラリーを作製し、例えば、ドクターブレード法により、シート状の成形体であるセラミックグリーンシートを作製する。このセラミックグリーンシートは、焼成工程を経て絶縁層１となるものである。   The above powder is mixed, and a binder and a solvent are added to prepare a slurry. For example, a ceramic green sheet that is a sheet-like formed body is prepared by a doctor blade method. This ceramic green sheet becomes the insulating layer 1 through the firing step.

次に、このセラミックグリーンシートに貫通孔を形成し、この貫通孔に金属粉末を含有する導体ペーストを充填する。この貫通孔に充填した導体ペーストは、焼成工程を経て貫通導体９となるものである。また、貫通孔の位置や大きさを適宜選択することで貫通金属体１３とすることもできる。   Next, through holes are formed in the ceramic green sheet, and the through holes are filled with a conductive paste containing metal powder. The conductor paste filled in the through hole becomes the through conductor 9 through a firing process. Further, the through metal body 13 can be formed by appropriately selecting the position and size of the through hole.

また、セラミックグリーンシートの主面に、印刷法などにより導体ペーストを印刷して所定のパターンを形成する。このセラミックグリーンシートの主面に形成されたパターンは、焼成工程を経て、導体層５となるものである。   Further, a predetermined pattern is formed by printing a conductor paste on the main surface of the ceramic green sheet by a printing method or the like. The pattern formed on the main surface of the ceramic green sheet becomes the conductor layer 5 through a firing process.

このようにして形成された、主面や貫通孔に導体ペーストを配設された複数のセラミックグリーンシートを積層し、さらに焼成することで本発明の発光素子用配線基板１１を作製することができる。なお、焼成温度や導体ペーストの組成は、絶縁層１となる原料の性質に合わせて適宜選択すればよい。   The light emitting element wiring substrate 11 of the present invention can be manufactured by laminating a plurality of ceramic green sheets having conductor paste disposed on the main surface and through holes formed in this manner, and further firing. . Note that the firing temperature and the composition of the conductor paste may be appropriately selected in accordance with the properties of the raw material to be the insulating layer 1.

また、導体層５は、導体ペーストのみから形成される必要は無く、例えば、金属箔や金属板を組み合わせてもよく、あるいは、薄膜法により形成してもよい。   Moreover, the conductor layer 5 does not need to be formed only from a conductor paste, for example, may combine metal foil and a metal plate, or may form it by a thin film method.

また、貫通金属体１３を形成する他の方法としては、セラミックグリーンシートの所定箇所に貫通孔を形成し、この貫通孔を形成したセラミックグリーンシートに、実質的にセラミックグリーンシートと同一厚みの金属シートを積層する工程と、セラミックグリーンシートにおける貫通孔形成部分を金属シート側から押圧することによって、金属シートの一部を貫通孔内に埋め込み、セラミックグリーンシートと金属シートとを一体化した成形体を焼成する方法が例示できる。   As another method for forming the through metal body 13, a through hole is formed at a predetermined position of the ceramic green sheet, and a metal having substantially the same thickness as the ceramic green sheet is formed on the ceramic green sheet in which the through hole is formed. A step of laminating sheets, and by pressing a through-hole forming portion of the ceramic green sheet from the metal sheet side, a part of the metal sheet is embedded in the through-hole and the ceramic green sheet and the metal sheet are integrated. The method of baking can be illustrated.

また、発光素子用配線基板１１の表面に露出した導体層５の表面にＡｌやＡｇめっきを施すことにより、反射率を向上させ、発行素子を搭載した場合、光の取出し効率を上昇させることができる。   Further, by applying Al or Ag plating to the surface of the conductor layer 5 exposed on the surface of the light emitting element wiring substrate 11, the reflectance can be improved, and when the issuing element is mounted, the light extraction efficiency can be increased. it can.

また、絶縁層１と枠体１５とを、セラミックスにより形成した場合には、絶縁層１と枠体１５とを同時焼成することができ、工程が簡略化されるため、安価な発光素子用配線基板１１を容易に作製することができる。また、セラミックスは耐熱性、耐湿性に優れているため、長期間の使用や、悪条件での使用にも、優れた耐久性を有する発光素子用配線基板１１となる。   In addition, when the insulating layer 1 and the frame 15 are formed of ceramics, the insulating layer 1 and the frame 15 can be fired at the same time, and the process is simplified. The substrate 11 can be easily manufactured. In addition, since ceramics are excellent in heat resistance and moisture resistance, the light emitting element wiring substrate 11 has excellent durability even when used for a long period of time or under adverse conditions.

また、安価で、加工性に優れた金属により枠体１５を形成することで、複雑な形状の枠体１５であっても、容易に安価に製造することができ、安価な発光素子用配線基板１１を供給することができる。この金属製の枠体１５は、例えば、ＡｌやＦｅ−Ｎｉ−Ｃｏ合金等などにより好適に形成することができる。また、枠体１５の内壁面１５ａには、Ｎｉ、Ａｕ、Ａｇなどからなるめっき層（図示せず）を形成してもよい。   Further, by forming the frame body 15 from an inexpensive metal having excellent workability, even the frame body 15 having a complicated shape can be easily manufactured at low cost, and the wiring board for a light-emitting element is inexpensive. 11 can be supplied. The metal frame 15 can be suitably formed of, for example, Al, Fe—Ni—Co alloy, or the like. Further, a plating layer (not shown) made of Ni, Au, Ag, or the like may be formed on the inner wall surface 15a of the frame 15.

なお、このように枠体１５を金属により形成する場合には、予め、絶縁基体１の発光素子搭載部８を有する面に金属層（図示せず）を形成し、この金属層と枠体１５とを、例えば、共晶Ａｇ−Ｃｕろう材等からなるろう材（図示せず）を介して、ろう付けすることができる。   When the frame 15 is formed of metal in this way, a metal layer (not shown) is formed in advance on the surface of the insulating substrate 1 having the light emitting element mounting portion 8, and the metal layer and the frame 15 are formed. Can be brazed via a brazing material (not shown) made of eutectic Ag-Cu brazing material or the like.

以上、セラミック系の絶縁層１を用いた例を説明したが、樹脂系の絶縁層１を用いた場合であっても、従来周知の製造方法により本発明の発光素子用配線基板１１を作製することができる。   As described above, the example using the ceramic insulating layer 1 has been described. Even when the resin insulating layer 1 is used, the light emitting element wiring substrate 11 of the present invention is manufactured by a conventionally known manufacturing method. be able to.

次に、本発明の発光素子用配線基板１１に発光素子１７をワイヤボンド２１あるいはフリップチップ接続する。図３に示すように、発光素子１７をワイヤボンド２１で接続する場合には、発光素子１７とワイヤボンド２１とを半田や樹脂などの接着層１９を用いて接続する。   Next, the light emitting element 17 is connected to the light emitting element wiring substrate 11 of the present invention by wire bonding 21 or flip chip connection. As shown in FIG. 3, when the light emitting element 17 is connected by the wire bond 21, the light emitting element 17 and the wire bond 21 are connected by using an adhesive layer 19 such as solder or resin.

さらに、この発光素子１７とワイヤボンド２１とを保護するように、両者を覆うように、例えば、シリコーン樹脂、エポキシ樹脂などの樹脂を充填し、硬化処理して封止樹脂２３を形成する。   Further, in order to protect the light emitting element 17 and the wire bond 21, for example, a resin such as a silicone resin or an epoxy resin is filled so as to cover the both, and a sealing resin 23 is formed by a curing process.

なお、必要に応じて、封止樹脂２３には蛍光体を含有させてもよい。   In addition, you may make the sealing resin 23 contain a fluorescent substance as needed.

以上説明した方法により、本発明の発光素子用配線基板１１ならびに発光装置２５を作製しうるが、本発明においては、導体層５や貫通導体９や貫通金属体１３を、発光素子用配線基板１１の一方の主面１１ａから他方の主面１１ｂに光が透過しないように配設することが重要である。   The light emitting element wiring substrate 11 and the light emitting device 25 of the present invention can be manufactured by the method described above. However, in the present invention, the conductor layer 5, the through conductor 9, and the through metal body 13 are connected to the light emitting element wiring substrate 11. It is important to dispose the light from one main surface 11a to the other main surface 11b.

そのためには、例えば３層の配線層５を備えた発光素子用配線基板１１では、絶縁層１の主面のうち、配線層５が形成されていない領域が透視して見通せないような構造とすればよい。   For this purpose, for example, in the light emitting element wiring substrate 11 including the three wiring layers 5, a structure in which the region where the wiring layer 5 is not formed in the main surface of the insulating layer 1 is not seen through. do it.

絶縁層１を２層設け、配線層５を３層設けた場合の構成例を、図４、５に示す。図４（ａ）は、絶縁層１ａの搭載部７側の主面の平面図である。図４（ｂ）は、絶縁層１ａを貫通するように形成した貫通導体９ａの配置を示す透視図である。また、図４（ｃ）は、絶縁層１ａと絶縁層１ｂとの間に形成された導体層５ｂの形態を示す透視図である。また、図５（ｄ）は、絶縁層１ｂを貫通するように形成した貫通導体９ｂの配置を示す透視図である。また、図５（ｅ）は、発光素子用配線基板１１の他方の主面１１ｂの平面図である。なお、図４、５は、いずれも発光素子用配線基板１１の搭載部７側から見た図である。   4 and 5 show a configuration example in which two insulating layers 1 are provided and three wiring layers 5 are provided. FIG. 4A is a plan view of the main surface of the insulating layer 1a on the mounting portion 7 side. FIG. 4B is a perspective view showing the arrangement of the through conductors 9a formed so as to penetrate the insulating layer 1a. FIG. 4C is a perspective view showing the form of the conductor layer 5b formed between the insulating layer 1a and the insulating layer 1b. FIG. 5D is a perspective view showing the arrangement of the through conductors 9b formed so as to penetrate the insulating layer 1b. FIG. 5E is a plan view of the other main surface 11 b of the light emitting element wiring substrate 11. 4 and 5 are views seen from the mounting portion 7 side of the light emitting element wiring substrate 11.

このように、図４（ａ）に示す絶縁基体３の露出部３ａと、図５（ｅ）に示す絶縁基体３の露出部３ｂとを結ぶ領域を、図４（ｂ）に示す貫通導体９ａ、図４（ｃ）に示す導体層５ｂおよび図５（ｄ）に示す貫通導体９ｂとで遮断するように形成することで本発明の発光素子用配線基板１１を作製することができる。   As described above, a region connecting the exposed portion 3a of the insulating base 3 shown in FIG. 4A and the exposed portion 3b of the insulating base 3 shown in FIG. 5E is defined as a through conductor 9a shown in FIG. 4B. The wiring board 11 for a light emitting element of the present invention can be manufactured by forming the conductor layer 5b shown in FIG. 4C and the through conductor 9b shown in FIG.

また、例えば、図４（ｂ）の貫通導体９ａのみが形成された絶縁層１ａに換えて、図６（ａ）に示すような貫通導体９ａと貫通金属体１３ａとが形成された絶縁層１ａを用い、図５（ｄ）の貫通導体９ｂのみが形成された絶縁層１ｂに換えて、図６（ｂ）に示すような貫通導体９ｂと貫通金属体１３ｂとが形成された絶縁層１ｂを用いることで、図２に示す貫通金属体１３を備えた本発明の発光素子用配線基板１１を作製することができる。   For example, instead of the insulating layer 1a in which only the through conductor 9a in FIG. 4B is formed, the insulating layer 1a in which the through conductor 9a and the through metal body 13a are formed as shown in FIG. 6A. In place of the insulating layer 1b in which only the through conductor 9b in FIG. 5D is formed, the insulating layer 1b in which the through conductor 9b and the through metal body 13b are formed as shown in FIG. By using it, the wiring board 11 for light emitting elements of this invention provided with the penetration metal body 13 shown in FIG. 2 can be produced.

なお、以上説明した例では、絶縁層１が２層、配線導体５が３層配設された例について説明したが、さらに多くの絶縁層１や配線導体５を配設してもよいことはいうまでもない。   In the example described above, an example in which two insulating layers 1 and three wiring conductors 5 are provided has been described. However, more insulating layers 1 and wiring conductors 5 may be provided. Needless to say.

発光素子用配線基板の絶縁基体の原料粉末として純度９９％以上、平均粒径が１．５μｍのＡｌ２Ｏ３粉末、純度９９％以上、平均粒径１．０μｍのＳｉＯ２粉末、純度９９％以上、平均粒子径１．５μｍのＭｎ２Ｏ３粉末を用いて、表１に示す割合で原料粉末を混合し、成形用有機樹脂（バインダ）としてアクリル系バインダと、トルエンを溶媒として混合し、スラリーを調整した。しかる後に、ドクターブレード法にて焼成後の厚みが３００μｍとなるセラミックグリーンシートを作製した。

Figure 2007149810
Al 2 O 3 powder having a purity of 99% or more and an average particle diameter of 1.5 μm, SiO 2 powder having a purity of 99% or more and an average particle diameter of 1.0 μm, purity 99% as a raw material powder for an insulating substrate of a wiring board for light emitting devices As described above, using Mn 2 O 3 powder having an average particle size of 1.5 μm, the raw material powder is mixed in the ratio shown in Table 1, and an acrylic binder and toluene as a solvent are mixed as a molding organic resin (binder). The slurry was adjusted. Thereafter, a ceramic green sheet having a thickness after firing of 300 μm was prepared by a doctor blade method.
Figure 2007149810

また、平均粒子径２μｍのＷ粉末とＣｕ粉末を用いて、７０質量％のＷ粉末と３０質量％のＣｕ粉末からなる金属粉末とアクリル系バインダとアセトンとを溶媒として混合し、導体ペーストを調製した。   Also, using W powder and Cu powder having an average particle diameter of 2 μm, a metal paste composed of 70% by weight W powder, 30% by weight Cu powder, an acrylic binder, and acetone are mixed as a solvent to prepare a conductor paste. did.

そして、上記のセラミックグリーンシートに対して、打ち抜き加工を施し、直径が２００μｍの貫通孔を形成し、この貫通孔内に、上記の導体ペーストをスクリーン印刷法によって充填するとともに、図７、８に示すような形状で、焼成後に厚みが２０μｍの導体層となるように導体ペーストを配線パターン状に印刷塗布した。   Then, the ceramic green sheet is punched to form a through hole having a diameter of 200 μm, and the conductive paste is filled into the through hole by a screen printing method. The conductor paste was printed and applied in a wiring pattern so as to form a conductor layer having a thickness of 20 μm after firing in the shape as shown.

そして、この導体層ならびに貫通導体となる導体ペーストを備えたセラミックグリーンシートを積層し、この積層体を露点＋２５℃の窒素水素混合雰囲気にて脱脂を行った後、窒素雰囲気中で１３００℃、１時間の条件で焼成して、図７、８に示す形態の外寸が５ｍｍ角で、厚みが０．６ｍｍの発光素子用配線基板を作製した。   And after laminating | stacking the ceramic green sheet provided with this conductor layer and the conductor paste used as a penetration conductor, this laminated body was degreased in nitrogen-hydrogen mixed atmosphere of dew point +25 degreeC, Then, 1300 degreeC, 1 Firing was performed under the conditions of time, and a wiring board for a light-emitting element having an outer dimension of 5 mm square and a thickness of 0.6 mm in the form shown in FIGS.

その後、露出した導体層の表面にＮｉ、ＡｕおよびＡｇめっきを順次施した。   Thereafter, Ni, Au, and Ag plating were sequentially applied to the exposed surface of the conductor layer.

また、搭載部側に露出した導体層５ａと他方の主面に露出した導体層５ｃとを、図７（ａ）、図８（ｅ）に示す形態とし、搭載部側に露出した導体層５ａと、他方に露出した導体層５ｃとに挟まれる、図７（ｃ）に記載した導体層５ｂに換えて、図９に示すよう従来の導体層を形成した発光素子用配線基板を比較例として作製した。   Also, the conductor layer 5a exposed on the mounting portion side and the conductor layer 5c exposed on the other main surface are configured as shown in FIGS. 7A and 8E, and the conductor layer 5a exposed on the mounting portion side is formed. 9 is used as a comparative example, instead of the conductor layer 5b described in FIG. 7C, which is sandwiched between the conductor layer 5c exposed on the other side and the conventional conductor layer as shown in FIG. Produced.

このようにして作製した４種類の基板について、分光測色計を用いて４００〜８００ｎｍの光の透過率を測定した。なお、光は基板の１層目から照射した。また、絶縁基体について、厚さ０．６ｍｍの試料を用い、４００〜８００ｎｍの範囲の波長の全反射率を分光測色計を用いて測定した。   The transmittance of light of 400 to 800 nm was measured for the four types of substrates thus produced using a spectrocolorimeter. Light was applied from the first layer of the substrate. For the insulating substrate, a sample having a thickness of 0.6 mm was used, and the total reflectance at a wavelength in the range of 400 to 800 nm was measured using a spectrocolorimeter.

これらの配線基板に接着剤としてエポキシ樹脂を用いて出力１．５Ｗの発光素子であるＬＥＤチップを搭載部に実装し、ボンディングワイヤによりＬＥＤチップと接続端子とを結線し、発光装置を得た。   An LED chip, which is a light emitting element with an output of 1.5 W, was mounted on these wiring boards using an epoxy resin as an adhesive, and the LED chip and the connection terminal were connected with a bonding wire to obtain a light emitting device.

以上の工程により作製した発光素子用配線基板の特性と、試験結果を表２に示す。なお、表２には、青色ＬＥＤの代表的な発光波長である４５０ｎｍの透過率と全反射率の値を記載した。

Figure 2007149810
Table 2 shows the characteristics and test results of the light-emitting element wiring substrate manufactured through the above steps. Table 2 shows the transmittance and total reflectance values of 450 nm, which is a typical emission wavelength of blue LEDs.
Figure 2007149810

表２に示すように、比較例である試料Ｎｏ．３、４は、発光素子用配線基板の露出した主面のほとんどを導体層で形成しているため、光の透過率は、それぞれ０．４％、０．２％となった。一方、本発明の試料Ｎｏ．１、２では、さらに低い０．１％未満の透過率を達成することができた。   As shown in Table 2, sample No. In Nos. 3 and 4, since most of the exposed main surface of the light-emitting element wiring board was formed of a conductor layer, the light transmittance was 0.4% and 0.2%, respectively. On the other hand, sample no. In 1 and 2, even lower transmittances of less than 0.1% could be achieved.

本発明の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of this invention. 本発明の他の形態の発光素子用配線基板の断面図である。It is sectional drawing of the wiring board for light emitting elements of the other form of this invention. 本発明の発光装置の断面図である。It is sectional drawing of the light-emitting device of this invention. 本発明の発光素子用配線基板の平面図ならびに透視図である。It is the top view and perspective view of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の平面図ならびに透視図である。It is the top view and perspective view of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の透視図である。It is a perspective view of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の一実施例を示す図面である。It is drawing which shows one Example of the wiring board for light emitting elements of this invention. 本発明の発光素子用配線基板の一実施例を示す図面である。It is drawing which shows one Example of the wiring board for light emitting elements of this invention. 比較例に用いられる、導体層を形成した絶縁層の図面である。It is drawing of the insulating layer which formed the conductor layer used for a comparative example.

符号の説明Explanation of symbols

１・・絶縁層
３・・絶縁基体
３ａ・・搭載部が形成された側の発光素子用配線基板の主面に露出した絶縁基体の露出部
３ｂ・・発光素子用配線基板の他方の主面に露出した絶縁基体の露出部
５・・導体層
７・・搭載部
９・・貫通導体
１１・・発光素子用配線基板
１３・・貫通金属体
１５・・枠体
１５ａ・・枠体の内壁面
１７・・発光素子
２５・・発光装置 1 .. Insulating layer 3... Insulating base 3 a... Exposed portion 3 b of insulating base exposed on the main surface of the light emitting element wiring substrate on the side where the mounting portion is formed. The exposed portion 5 of the insulating base exposed to the conductive layer 7, the mounting portion 9, the through conductor 11, the light emitting element wiring substrate 13, the through metal body 15, the frame body 15 a, and the inner wall surface of the frame body 17. Light emitting element 25. Light emitting device

Claims (2)

２層以上の絶縁層を積層してなる平板状の絶縁基体と、前記絶縁層の表面に形成された３層以上の導体層と、前記絶縁基体の一方の主面に形成され、発光素子を搭載する搭載部と、前記絶縁層を貫通して形成され、前記発光素子と電気的に接続される貫通導体と、を具備してなる発光素子用配線基板であって、前記絶縁基体を透視したときに該発光素子用配線基板の一方の主面に露出した前記絶縁基体の露出部から、他方の主面に露出した前記絶縁基体の露出部が前記絶縁層で遮断されて見通せないことを特徴とする発光素子用配線基板。 A flat insulating substrate formed by laminating two or more insulating layers, three or more conductor layers formed on the surface of the insulating layer, and formed on one main surface of the insulating substrate. A wiring board for a light emitting element, comprising: a mounting portion to be mounted; and a through conductor formed through the insulating layer and electrically connected to the light emitting element, wherein the insulating base is seen through Sometimes, the exposed portion of the insulating base exposed on the other main surface is blocked by the insulating layer from the exposed portion of the insulating base exposed on one main surface of the wiring board for the light emitting element, and cannot be seen. A wiring board for a light emitting element. 請求項１に記載の発光素子用配線基板の前記搭載部に発光素子を搭載していることを特徴とする発光装置。

A light emitting device comprising a light emitting element mounted on the mounting portion of the light emitting element wiring board according to claim 1.

JP2005339877A 2005-11-25 2005-11-25 Wiring board for light-emitting element, and light-emitting device Pending JP2007149810A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2017897A1 (en) * 2007-07-16 2009-01-21 ILED Photoelectronics Inc. Package structure for a high-luminance light source
JP2009021426A (en) * 2007-07-12 2009-01-29 Sharp Corp Chip component type led and method of manufacturing the same
WO2011002208A2 (en) * 2009-07-03 2011-01-06 서울반도체 주식회사 Light-emitting diode package
JP2011060960A (en) * 2009-09-09 2011-03-24 Toshiba Lighting & Technology Corp Light-emitting module
JP2013046072A (en) * 2011-08-22 2013-03-04 Lg Innotek Co Ltd Light emitting element package, light source module, and lighting system including light source module
JP2018186284A (en) * 2011-08-22 2018-11-22 エルジー イノテック カンパニー リミテッド Uv light light-emitting element package
JP2019040956A (en) * 2017-08-23 2019-03-14 スタンレー電気株式会社 Semiconductor light-emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004235204A (en) * 2003-01-28 2004-08-19 Kyocera Corp Package for storing light emitting element and light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004235204A (en) * 2003-01-28 2004-08-19 Kyocera Corp Package for storing light emitting element and light emitting device

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* Cited by examiner, † Cited by third party
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JP2009021426A (en) * 2007-07-12 2009-01-29 Sharp Corp Chip component type led and method of manufacturing the same
EP2017897A1 (en) * 2007-07-16 2009-01-21 ILED Photoelectronics Inc. Package structure for a high-luminance light source
US9472743B2 (en) 2009-07-03 2016-10-18 Seoul Semiconductor Co., Ltd. Light emitting diode package
WO2011002208A3 (en) * 2009-07-03 2011-04-07 서울반도체 주식회사 Light-emitting diode package
US8796706B2 (en) 2009-07-03 2014-08-05 Seoul Semiconductor Co., Ltd. Light emitting diode package
US9048391B2 (en) 2009-07-03 2015-06-02 Seoul Semiconductor Co., Ltd. Light emitting diode package
US9257624B2 (en) 2009-07-03 2016-02-09 Seoul Semiconductor Co., Ltd. Light emitting diode package
WO2011002208A2 (en) * 2009-07-03 2011-01-06 서울반도체 주식회사 Light-emitting diode package
US9786827B2 (en) 2009-07-03 2017-10-10 Seoul Semiconductor Co., Ltd. Light emitting diode package
JP2011060960A (en) * 2009-09-09 2011-03-24 Toshiba Lighting & Technology Corp Light-emitting module
JP2013046072A (en) * 2011-08-22 2013-03-04 Lg Innotek Co Ltd Light emitting element package, light source module, and lighting system including light source module
JP2018186284A (en) * 2011-08-22 2018-11-22 エルジー イノテック カンパニー リミテッド Uv light light-emitting element package
USRE48858E1 (en) 2011-08-22 2021-12-21 Suzhou Lekin Semiconductor Co., Ltd. Light emitting device package and light unit
JP2019040956A (en) * 2017-08-23 2019-03-14 スタンレー電気株式会社 Semiconductor light-emitting device
JP7048228B2 (en) 2017-08-23 2022-04-05 スタンレー電気株式会社 Semiconductor light emitting device

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