JP7048228B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP7048228B2
JP7048228B2 JP2017160503A JP2017160503A JP7048228B2 JP 7048228 B2 JP7048228 B2 JP 7048228B2 JP 2017160503 A JP2017160503 A JP 2017160503A JP 2017160503 A JP2017160503 A JP 2017160503A JP 7048228 B2 JP7048228 B2 JP 7048228B2
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俊広 及川
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Stanley Electric Co Ltd
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Description

本発明は、配線基板に半導体発光素子が搭載された半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a wiring board.

特許文献１には、発光ダイオード（半導体発光素子）を配線基板に搭載した発光装置が開示されている。このような発光装置を、比較的高い光出力の（高輝度の）照明機器、たとえばヘッドランプやバックライト等の車両用灯具などに用いる場合、発光ダイオードには比較的大きい電力が供給される。このとき、発光ダイオードは、発熱により、高温となる。発光ダイオードの温度が高くなると、当該発光ダイオードの発光効率が低減する場合がある。 Patent Document 1 discloses a light emitting device in which a light emitting diode (semiconductor light emitting element) is mounted on a wiring board. When such a light emitting device is used for a lighting device having a relatively high light output (high brightness), for example, a vehicle lamp such as a head lamp or a backlight, a relatively large amount of power is supplied to the light emitting diode. At this time, the light emitting diode becomes hot due to heat generation. When the temperature of the light emitting diode becomes high, the luminous efficiency of the light emitting diode may decrease.

特開２０１３－１７５５２８号公報Japanese Unexamined Patent Publication No. 2013-175528

本発明の主な目的は、半導体発光素子を配線基板に搭載した半導体発光装置において、その放熱効率を向上させることにある。 A main object of the present invention is to improve the heat dissipation efficiency of a semiconductor light emitting device in which a semiconductor light emitting element is mounted on a wiring board.

本発明の主な観点によれば、外縁を構成する４つの角部と４つの辺部を有する矩形状の平面形状を有する支持基板と、前記支持基板の表面に、相互に離隔して設けられた素子搭載電極とボンディング電極と、前記支持基板の表面に設けられ、前記支持基板の外縁に沿う矩形枠状の配線部分と、前記支持基板の表面に設けられ、前記ボンディング電極と前記矩形枠状の配線部分とを接続する接続配線部分と、前記素子搭載電極の上面に固定され、前記素子搭載電極に電気的に接続された第１の電極を有し、さらに第２の電極を有する半導体発光素子と、前記第２の電極と前記ボンディング電極とを電気的に接続するボンディングワイヤと、前記支持基板の裏面に設けられた、第１の裏面電極と第２の裏面電極からなる導電領域のパターンであって、前記第１の裏面電極は、前記支持基板の４つの辺部それぞれに接する形状で延在し、前記第２の裏面電極は前記支持基板の４つの角部それぞれの近傍に設けられている導電領域のパターンと、前記支持基板を貫通するビア電極であって、前記素子搭載電極と前記第１の裏面電極とを電気的に接続する第１のビア電極、および、前記配線部分と前記第２の裏面電極とを電気的に接続する４つの第２のビア電極、を含むビア電極と、を備える半導体発光装置、が提供される。
According to the main viewpoint of the present invention, the support substrate having a rectangular planar shape having four corners and four sides constituting the outer edge and the surface of the support substrate are provided so as to be separated from each other. The element mounting electrode and the bonding electrode provided on the surface of the support substrate, a rectangular frame-shaped wiring portion along the outer edge of the support substrate, and the bonding electrode and the rectangular frame-shaped wiring portion provided on the surface of the support substrate. A semiconductor light emitting portion having a connection wiring portion connecting the wiring portion of the above, a first electrode fixed to the upper surface of the element mounting electrode and electrically connected to the element mounting electrode , and further having a second electrode. A pattern of a conductive region composed of an element , a bonding wire for electrically connecting the second electrode and the bonding electrode, and a first back surface electrode and a second back surface electrode provided on the back surface of the support substrate. The first back surface electrode extends in a shape in contact with each of the four side portions of the support substrate, and the second back surface electrode is provided in the vicinity of each of the four corner portions of the support substrate. The pattern of the conductive region, the via electrode penetrating the support substrate, the first via electrode that electrically connects the element mounting electrode and the first back surface electrode, and the wiring portion . Provided is a semiconductor light emitting device including a via electrode including four second via electrodes for electrically connecting the second back surface electrode.

半導体発光素子が発する熱を効率的に分散することができる。 The heat generated by the semiconductor light emitting device can be efficiently dispersed.

および、and, 図１ａ～図１ｃは、参考例による半導体発光装置を示す断面図，平面図および底面図であり、図１ｄは、当該半導体発光素子をマウント基板上に載置した状態を示す平面図である。1a to 1c are a cross-sectional view, a plan view, and a bottom view showing a semiconductor light emitting device according to a reference example, and FIG. 1d is a plan view showing a state in which the semiconductor light emitting device is mounted on a mount substrate. 図２ａ～図２ｃは、第１の実施例による半導体発光装置を製造する方法を例示する断面図である。2a to 2c are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to the first embodiment. および、and, 図３ａおよび図３ｂは、第１の実施例による半導体発光装置を示す平面図および底面図であり、図３ｃは、当該半導体発光装置をマウント基板上に載置した状態を示す平面図であり、図３ｄは、当該半導体発光装置の変形例を示す底面図である。3a and 3b are a plan view and a bottom view showing the semiconductor light emitting device according to the first embodiment, and FIG. 3c is a plan view showing a state in which the semiconductor light emitting device is mounted on a mount substrate. FIG. 3d is a bottom view showing a modified example of the semiconductor light emitting device. 図４ａおよび図４ｂは、第２の実施例による半導体発光装置を示す平面図および底面図である。4a and 4b are a plan view and a bottom view showing the semiconductor light emitting device according to the second embodiment.

図１ａ～図１ｃは、参考例による半導体発光装置（ＬＥＤ装置）１００を示す断面図，平面図（上面図）および底面図（下面図）である。ＬＥＤ装置１００は、主に、電極（導電層）を含む支持基板（配線基板）１１、支持基板１１に搭載される半導体発光素子（ＬＥＤ素子）１７、ＬＥＤ素子１７を囲う周壁体２１、および、周壁体２１の、ＬＥＤ素子２１を囲う空間に充填される封止材２５、を備える。 1a to 1c are a cross-sectional view, a plan view (top view), and a bottom view (bottom view) showing a semiconductor light emitting device (LED device) 100 according to a reference example. The LED device 100 mainly includes a support substrate (wiring substrate) 11 including an electrode (conductive layer), a semiconductor light emitting element (LED element) 17 mounted on the support substrate 11, a peripheral wall body 21 surrounding the LED element 17, and a peripheral wall body 21. A sealing material 25, which is filled in the space surrounding the LED element 21 of the peripheral wall body 21, is provided.

図１ａに示すように、基板１１の上面（表面）には、素子搭載ランド１３Ａおよびボンディングランド１３Ｂからなる表面導電部１３（銅などの導電部材）が形成されている。また、素子搭載ランド１３Ａおよびボンディングランド１３Ｂ各々は、スルーホール１５Ａ，１５Ｂを通って（ないしスルーホール１５Ａ，１５Ｂを通るビア電極１６Ａ，１６Ｂを介して）、基板１１の下面（裏面）に設けられる導電部に接続している。なお、図中において、各構成部材の相対的なサイズや位置関係などは、実際のものとは異なっている。 As shown in FIG. 1a, a surface conductive portion 13 (conductive member such as copper) composed of an element mounting land 13A and a bonding land 13B is formed on the upper surface (surface) of the substrate 11. Further, each of the element mounting land 13A and the bonding land 13B is provided on the lower surface (back surface) of the substrate 11 through the through holes 15A and 15B (or via the via electrodes 16A and 16B passing through the through holes 15A and 15B). It is connected to the conductive part. In the figure, the relative size and positional relationship of each component are different from the actual ones.

素子搭載ランド１３Ａの上方に、半導体発光素子（ＬＥＤ素子）１７が載置されている。ＬＥＤ素子１７は、たとえば、上面にアノード電極（Ｐ側電極）、下面にカソード電極（Ｎ側電極）を有している。ＬＥＤ素子１７は、はんだ等を介した下面電極と素子搭載ランドとの共晶接合により、素子搭載ランド１３Ａ上に固定されている。 A semiconductor light emitting element (LED element) 17 is placed above the element mounting land 13A. The LED element 17 has, for example, an anode electrode (P-side electrode) on the upper surface and a cathode electrode (N-side electrode) on the lower surface. The LED element 17 is fixed on the element mounting land 13A by eutectic bonding between the bottom electrode and the element mounting land via solder or the like.

ＬＥＤ素子１７の下面電極は、直接、素子搭載ランド１３Ａに接続される。上面電極は、ボンディングワイヤ１９（金、銅、白金、アルミニウムなどの導電部材）を介してボンディングランド１３Ｂに接続される。 The bottom electrode of the LED element 17 is directly connected to the element mounting land 13A. The top electrode is connected to the bonding land 13B via a bonding wire 19 (a conductive member such as gold, copper, platinum, or aluminum).

ＬＥＤ素子１７は、たとえば、窒化物系半導体材料を含み、青色光（４３０ｎｍ～４７０ｎｍ程度）を発する青色発光ダイオードである。ＬＥＤ素子１７の高さは、１００μｍ程度である。 The LED element 17 is, for example, a blue light emitting diode containing a nitride semiconductor material and emitting blue light (about 430 nm to 470 nm). The height of the LED element 17 is about 100 μm.

図１ｂに示すように、基板１１表面のほぼ中央に、ＬＥＤ素子１７が配置されており、ＬＥＤ素子１７を取り囲むように周壁体２１が配置される。周壁体２１は、基板１１を露出する貫通孔を備え、その貫通孔の内壁は、基板１１の上面とともに、ＬＥＤ素子１７を囲む凹部２３を画定する。 As shown in FIG. 1b, the LED element 17 is arranged substantially in the center of the surface of the substrate 11, and the peripheral wall body 21 is arranged so as to surround the LED element 17. The peripheral wall body 21 is provided with a through hole that exposes the substrate 11, and the inner wall of the through hole defines a recess 23 that surrounds the LED element 17 together with the upper surface of the substrate 11.

凹部２３内には、封止材２５が充填されており、ＬＥＤ素子１７等が封止材２５により埋設されている。封止材２５は、透光性を有する樹脂部材、たとえば、シリコーン樹脂、エポキシ樹脂またはシリコーン及びエポキシ樹脂のハイブリッド樹脂を、凹部２３内に注入し、硬化させることにより形成される。封止材２５は、たとえば、ＬＥＤ素子１７およびボンディングワイヤ１９を湿気ないし衝撃等の外的要因から保護する機能を果たす。なお、封止材２５には、たとえば、二酸化ケイ素、酸化チタン、酸化アルミナ、酸化亜鉛等の光散乱材が分散されていてもよい。 The recess 23 is filled with a sealing material 25, and the LED element 17 and the like are embedded by the sealing material 25. The sealing material 25 is formed by injecting a translucent resin member, for example, a silicone resin, an epoxy resin, or a hybrid resin of silicone and an epoxy resin into the recess 23 and curing the sealing material 25. The encapsulant 25 serves, for example, to protect the LED element 17 and the bonding wire 19 from external factors such as moisture and impact. A light scattering material such as silicon dioxide, titanium oxide, alumina oxide, or zinc oxide may be dispersed in the sealing material 25.

また、封止材２５には、たとえば、ＹＡＧ（イットリウム・アルミニウム・ガーネット）に付活剤としてＣｅ（セリウム）を導入したＹＡＧ：Ｃｅ蛍光体が分散されていてもよい。この蛍光体は、ＬＥＤ素子１７から発せられる、波長約４６０ｎｍの青色光を吸収して、約５６０ｎｍの発光ピーク波長を有する黄色光を発する。ＬＥＤ素子１７から発せられて蛍光体に吸収されなかった青色光と蛍光体から発せられる黄色光とが混ざり合うことによって白色光が得られる。 Further, for example, a YAG: Ce phosphor in which Ce (cerium) is introduced as an activator into YAG (yttrium aluminum garnet) may be dispersed in the sealing material 25. This phosphor absorbs blue light having a wavelength of about 460 nm emitted from the LED element 17, and emits yellow light having an emission peak wavelength of about 560 nm. White light is obtained by mixing blue light emitted from the LED element 17 that is not absorbed by the phosphor and yellow light emitted from the phosphor.

なお、基板１１の平面形状は、たとえば一辺約３ｍｍの正方形状である。また、ＬＥＤ素子１７の平面形状は、たとえば、一辺約７５０μｍの正方形状である。 The planar shape of the substrate 11 is, for example, a square shape having a side of about 3 mm. Further, the planar shape of the LED element 17 is, for example, a square shape having a side of about 750 μm.

図１ｃに示すように、基板１１裏面には、素子搭載ランド１３Ａと導通する素子側電極１４Ａ、および、ボンディングランド１３Ｂと導通するボンディングワイヤ側電極１４Ｂからなる導電部１４が形成されている。素子側電極１４Ａおよびワイヤ側電極１４Ｂは、間隙を空けて、基板１１の裏面を二分するように設けられている。 As shown in FIG. 1c, a conductive portion 14 composed of an element-side electrode 14A conducting with the element-mounted land 13A and a bonding wire-side electrode 14B conducting with the bonding land 13B is formed on the back surface of the substrate 11. The element-side electrode 14A and the wire-side electrode 14B are provided so as to divide the back surface of the substrate 11 into two with a gap.

図１ｄは、ＬＥＤ装置１００をマウント基板９０に載置（マウント）した状態を示す平面図である。ＬＥＤ装置１００は、通常、電極や配線等が設けられたマウント基板９０上に載置されて用いられる。マウント基板９０は、たとえば、電源装置のグランド端子に接続されるＧＮＤ電極９４Ａと、電源装置の正電圧を出力する端子に接続されるＶＣＣ電極９４Ｂと、を含む。 FIG. 1d is a plan view showing a state in which the LED device 100 is mounted on the mount substrate 90. The LED device 100 is usually used by being mounted on a mount substrate 90 provided with electrodes, wiring, and the like. The mount board 90 includes, for example, a GND electrode 94A connected to the ground terminal of the power supply device and a VCS electrode 94B connected to a terminal that outputs a positive voltage of the power supply device.

ＬＥＤ装置１００の素子側電極１４Ａ（破線で示す）が、マウント基板９０のＧＮＤ電極９４Ａ上に配置される。それらの電極１４Ａ，９４Ａは、はんだなどを介して、相互に電気的に接続されている。また、ＬＥＤ装置１００のワイヤ側電極１４Ｂ（破線で示す）が、マウント基板９０のＶＣＣ電極９４Ｂ上に配置される。それらの電極１４Ｂ，９４Ｂは、はんだなどを介して、相互に電気的に接続されている。 The element-side electrode 14A (indicated by the broken line) of the LED device 100 is arranged on the GND electrode 94A of the mount substrate 90. The electrodes 14A and 94A are electrically connected to each other via solder or the like. Further, the wire side electrode 14B (indicated by a broken line) of the LED device 100 is arranged on the VCS electrode 94B of the mount substrate 90. The electrodes 14B and 94B are electrically connected to each other via solder or the like.

ＧＮＤ電極９４ＡおよびＶＣＣ電極９４Ｂから、素子側電極１４Ａおよびワイヤ側電極１４Ｂを介して、ＬＥＤ素子１７に電力（０．５Ｗ～５．０Ｗ程度）が供給されると、ＬＥＤ素子１７から光が放出される。このとき、ＬＥＤ素子１７は発熱し、比較的高い温度に達する。 When electric power (about 0.5 W to 5.0 W) is supplied to the LED element 17 from the GND electrode 94A and the VCS electrode 94B via the element side electrode 14A and the wire side electrode 14B, light is emitted from the LED element 17. Will be done. At this time, the LED element 17 generates heat and reaches a relatively high temperature.

ＬＥＤ素子１７から発せられた熱は、素子搭載ランド１３Ａを介して、素子側電極１４Ａおよびマウント基板９０のＧＮＤ電極９４Ａに伝導する。ＬＥＤ装置１００の裏面に伝導した熱は、スルーホール１５の位置を中心として、素子側電極１４ＡおよびＧＮＤ電極９４Ａが延在する方向（図１ｄにおいて、上下方向および左方向）に伝導する。 The heat generated from the LED element 17 is conducted to the element side electrode 14A and the GND electrode 94A of the mount substrate 90 via the element mounting land 13A. The heat conducted on the back surface of the LED device 100 is conducted in the direction in which the element side electrode 14A and the GND electrode 94A extend (vertical direction and left direction in FIG. 1d) with the position of the through hole 15 as the center.

素子側電極１４ＡないしＧＮＤ電極９４Ａは、ワイヤ側電極１４ＢないしＶＣＣ電極９４Ｂと物理的に離隔している。このため、素子１００の裏面に伝導した熱は、ワイヤ側電極１４ＢないしＶＣＣ電極９４Ｂが延在する方向（図１ｄにおいて右方向）には伝導しえない。 The element-side electrodes 14A to GND electrodes 94A are physically separated from the wire-side electrodes 14B to VCS electrodes 94B. Therefore, the heat conducted on the back surface of the element 100 cannot be conducted in the direction in which the wire side electrode 14B to the VCS electrode 94B extends (to the right in FIG. 1d).

参考例によるＬＥＤ装置１００は、伝熱・放熱効率について、改善の余地がある。本発明者は、伝熱・放熱効率がより良好なＬＥＤ装置について検討を行った。 The LED device 100 according to the reference example has room for improvement in heat transfer / heat dissipation efficiency. The present inventor has studied an LED device having better heat transfer / heat dissipation efficiency.

以下、第１の実施例によるＬＥＤ装置について説明する。第１の実施例によるＬＥＤ装置は、参考例によるＬＥＤ装置と概ね同様の構成・構造を有する。ただし、第１の実施例は、参考例と比べると、主に、基板表面および裏面に設けられる導電層の形状・構成が異なっている。 Hereinafter, the LED device according to the first embodiment will be described. The LED device according to the first embodiment has substantially the same configuration and structure as the LED device according to the reference example. However, in the first embodiment, the shapes and configurations of the conductive layers provided on the front surface and the back surface of the substrate are mainly different from those in the reference example.

図２ａ～図２ｃは、第１の実施例によるＬＥＤ装置を製造する様子を示す断面図である。なお、図中では、１つの発光装置の断面を示しているが、実際の製造時は、複数の発光装置が配列されたシート状態で製造され、最後にダイシング等で個々の発光装置に個片化されてもよい。 2a to 2c are cross-sectional views showing how to manufacture the LED device according to the first embodiment. Although the cross section of one light emitting device is shown in the figure, in the actual manufacturing, it is manufactured in a sheet state in which a plurality of light emitting devices are arranged, and finally, each light emitting device is individually diced by dicing or the like. It may be diced.

図２ａに示すように、シリコーン樹脂基板１１の両面に銅箔が貼り合わされた銅貼基板に、当該基板の上面から下面に貫通するスルーホール１５Ａ，１５Ｂをドリルまたはパンチなどで形成する。その後、フォトリソグラフィ技術を用いて銅箔をエッチング処理し、基板表面の素子搭載ランド１３Ａ，ボンディングランド１３Ｂおよび配線１３Ｃ、ならびに、基板裏面の素子側電極１４Ａおよびワイヤ側電極１４Ｂからなる導電領域のパターン形成を行う。さらに、パターン形成した銅箔上およびスルーホール１５Ａ，１５Ｂ内に銅メッキ等を施し、上下の導電部１３，１４を電気的に接続するビア電極１６Ａ，１６Ｂを形成する。 As shown in FIG. 2a, through holes 15A and 15B penetrating from the upper surface to the lower surface of the silicon-coated substrate 11 are formed by drilling or punching on the copper-coated substrate on which copper foils are bonded to both sides of the silicone resin substrate 11. After that, the copper foil is etched using photolithography technology, and the pattern of the conductive region consisting of the element mounting land 13A, the bonding land 13B and the wiring 13C on the front surface of the substrate, and the element side electrode 14A and the wire side electrode 14B on the back surface of the substrate. Perform formation. Further, copper plating or the like is applied on the patterned copper foil and in the through holes 15A and 15B to form via electrodes 16A and 16B for electrically connecting the upper and lower conductive portions 13 and 14.

次に、図２ｂに示すように、基板１１の上面の周縁領域に配置した接着材を介して、基板１１上に周壁体２１を固定する。本実施例では、シート状の接着材が接着された周壁体２１を、基板１１の上面の周縁領域に載置し、熱圧着することにより接着材を硬化させ、周壁体２１と基板１１とを固定した。 Next, as shown in FIG. 2b, the peripheral wall body 21 is fixed on the substrate 11 via an adhesive material arranged in the peripheral region of the upper surface of the substrate 11. In this embodiment, the peripheral wall body 21 to which the sheet-shaped adhesive is adhered is placed on the peripheral region of the upper surface of the substrate 11 and thermocompression bonded to cure the adhesive, and the peripheral wall body 21 and the substrate 11 are bonded to each other. Fixed.

具体的には、接着材として半硬化状態のエポキシ樹脂系の接着シートを、貫通孔形成前の周壁体２１に貼り合わせ、周壁体２１及び接着シートの二層に同時に貫通孔を形成する。その後、シート状の接着材が接着された周壁体２１を基板１１の上面の周縁領域に載置し、熱圧着することにより接着材を硬化させて周壁体２１と基板１１とを固定した。 Specifically, an epoxy resin-based adhesive sheet in a semi-cured state as an adhesive is attached to the peripheral wall body 21 before forming the through hole, and through holes are simultaneously formed in the two layers of the peripheral wall body 21 and the adhesive sheet. After that, the peripheral wall body 21 to which the sheet-shaped adhesive was adhered was placed on the peripheral region of the upper surface of the substrate 11 and thermocompression bonded to cure the adhesive material to fix the peripheral wall body 21 and the substrate 11.

次に、基板１１の上面に形成された素子搭載ランド１３Ａ上に、金錫またははんだペースト等のペースト状の金属接合材を、ポッティング等で塗布する。そして、金属接合材上に、下面に電極（たとえばカソード電極）を有するＬＥＤ素子１７を載置し、基板１１裏面側から、コイルによって電磁波を発する誘導加熱装置によって誘導加熱を行う。 Next, a paste-like metal bonding material such as gold tin or solder paste is applied by potting or the like on the element mounting land 13A formed on the upper surface of the substrate 11. Then, an LED element 17 having an electrode (for example, a cathode electrode) on the lower surface is placed on the metal bonding material, and induction heating is performed from the back surface side of the substrate 11 by an induction heating device that emits an electromagnetic wave by a coil.

この誘導加熱によって、基板１１上の導電部材である素子搭載ランド、ＬＥＤ素子１７の下面電極およびペースト状の金属接合材が、選択的かつ瞬間的に金錫またははんだ共晶反応等の接合熱処理に必要な温度（約３００℃）に加熱される。ペースト状の金属接合材は、誘導加熱を開始すると瞬時に、素子搭載ランド１３およびＬＥＤ素子１７の下面電極の表面に濡れ広がり、その後、誘導加熱を停止すると冷却されて固化する。このようにして、素子搭載ランド１３Ａの上面とＬＥＤ素子１７下面の電極とが金属接合材によって接合固定され、ＬＥＤ素子１７の下面にある電極と素子搭載ランド１３Ａとが金属接合材を介して電気的に接続される。 By this induction heating, the element mounting land which is a conductive member on the substrate 11, the bottom electrode of the LED element 17, and the paste-like metal bonding material are selectively and instantaneously subjected to bonding heat treatment such as gold-tin or solder eutectic reaction. It is heated to the required temperature (about 300 ° C.). The paste-like metal bonding material instantly wets and spreads on the surfaces of the lower surface electrodes of the element mounting land 13 and the LED element 17 when the induction heating is started, and then is cooled and solidified when the induction heating is stopped. In this way, the upper surface of the element mounting land 13A and the electrode on the lower surface of the LED element 17 are joined and fixed by the metal bonding material, and the electrode on the lower surface of the LED element 17 and the element mounting land 13A are electrically connected via the metal bonding material. Connected to.

最後に、図２ｃに示すように、ＬＥＤ素子１７の上面にある電極（たとえばアノード電極）とボンディングランド１３Ｂとを、ボンディングワイヤ１９により接続する。その後、凹部２３内にＬＥＤ素子１７およびボンディングワイヤ１９を埋設する透光性樹脂部材を充填し、封止部２５を形成する。これにより、ＬＥＤ装置１０１が完成する。 Finally, as shown in FIG. 2c, the electrode (for example, the anode electrode) on the upper surface of the LED element 17 and the bonding land 13B are connected by the bonding wire 19. After that, the recess 23 is filled with a translucent resin member for embedding the LED element 17 and the bonding wire 19, and the sealing portion 25 is formed. This completes the LED device 101.

図３ａおよび図３ｂは、第１の実施例によるＬＥＤ装置１０１において、その導電部１３，１４の形状を示す平面図（上面図）および底面図（下面図）である。なお、図３ａにおいて、便宜のため、周壁体２１および封止材２５の図示を省略し、周壁体２１の内壁（凹部２３の輪郭）を破線で示している。 3a and 3b are a plan view (top view) and a bottom view (bottom view) showing the shapes of the conductive portions 13 and 14 in the LED device 101 according to the first embodiment. In FIG. 3a, for convenience, the peripheral wall body 21 and the sealing material 25 are not shown, and the inner wall of the peripheral wall body 21 (outline of the recess 23) is shown by a broken line.

図３ａに示すように、第１の実施例において、基板１１の上面に設けられる導電層１３は、素子搭載ランド１３Ａおよびボンディングランド１３Ｂに加え、さらに、ボンディングランド１３Ｂと連続する配線１３Ｃを含む。配線１３Ｃは、基板１１の外縁に沿う矩形枠状の部分と、その矩形枠状の部分とボンディングランド１３Ｂとを接続する部分から構成される。配線１３Ｃは、矩形状の基板１１の角部近傍に配置されるスルーホール１５Ｂを通って（ないしスルーホール１５Ｂを通るビア電極１６Ｂを介して）、基板１１裏面に設けられるワイヤ側電極１４Ｂに接続する。 As shown in FIG. 3a, in the first embodiment, the conductive layer 13 provided on the upper surface of the substrate 11 includes the element mounting land 13A and the bonding land 13B, as well as the wiring 13C continuous with the bonding land 13B. The wiring 13C is composed of a rectangular frame-shaped portion along the outer edge of the substrate 11 and a portion connecting the rectangular frame-shaped portion and the bonding land 13B. The wiring 13C is connected to the wire side electrode 14B provided on the back surface of the substrate 11 through the through hole 15B arranged near the corner of the rectangular substrate 11 (or via the via electrode 16B passing through the through hole 15B). do.

図３ｂに示すように、第１の実施例において、ボンディングランド１３Ｂと導通するワイヤ側電極１４Ｂは、基板１１の４つの角部各々に、扇状の形状で設けられている。扇状のワイヤ側電極１４Ｂの半径は、０．２ｍｍ～０．５ｍｍ程度である。 As shown in FIG. 3b, in the first embodiment, the wire-side electrode 14B conducting with the bonding land 13B is provided in each of the four corners of the substrate 11 in a fan shape. The radius of the fan-shaped wire side electrode 14B is about 0.2 mm to 0.5 mm.

また、素子搭載ランド１３Ａと導通する素子側電極１４Ａは、基板１１の外縁を構成する４つの辺部各々に接する形状で設けられている。各辺部において、素子側電極１４Ａが接している割合は、５０％以上であることが好ましい。つまり、１辺３．０ｍｍの正方形状の基板１１を用いた場合、各辺部において、素子側電極１４Ａが接している長さは１．５ｍｍ以上であることが好ましい。 Further, the element side electrode 14A conducting with the element mounting land 13A is provided in a shape in contact with each of the four side portions constituting the outer edge of the substrate 11. The ratio of the element-side electrode 14A in contact with each side portion is preferably 50% or more. That is, when a square substrate 11 having a side of 3.0 mm is used, it is preferable that the length of the element-side electrode 14A in contact with each side is 1.5 mm or more.

なお、素子搭載ランド１３Ａに接続するビア電極１６Ａ（スルーホール１５Ａ）の直径は、約７００μｍであり、ボンディングランド１３Ｂに接続するビア電極１６Ｂ（スルーホール１５Ｂ）の直径は、６０μｍ～１００μｍ程度である。素子搭載ランド１３Ａに接続するビア電極１６Ａは、素子１７から発せられる熱を効率的に、基板１１裏面の素子側電極１４Ａに伝導するために、できるだけ太く形成することが好ましい。また、放熱性の観点から、素子側電極１４Ａはできるだけ広い（大きい）ことが好ましく、ワイヤ側電極１４Ｂはできるだけ狭く（小さく）形成することが好ましい。このため、ワイヤ側電極１４Ｂに接続するビア電極１６Ｂも、できるだけ細く形成することが好ましい。 The diameter of the via electrode 16A (through hole 15A) connected to the element mounting land 13A is about 700 μm, and the diameter of the via electrode 16B (through hole 15B) connected to the bonding land 13B is about 60 μm to 100 μm. .. The via electrode 16A connected to the element mounting land 13A is preferably formed as thick as possible in order to efficiently conduct the heat generated from the element 17 to the element side electrode 14A on the back surface of the substrate 11. Further, from the viewpoint of heat dissipation, the element side electrode 14A is preferably formed as wide (large) as possible, and the wire side electrode 14B is preferably formed as narrow (small) as possible. Therefore, it is preferable that the via electrode 16B connected to the wire side electrode 14B is also formed as thin as possible.

図３ｃは、ＬＥＤ装置１０１をマウント基板９１に載置（マウント）した状態を示す平面図である。ＬＥＤ装置１０１の素子側電極１４Ａ（破線で示す）が、マウント基板９１のＧＮＤ電極９４Ａ（斜線模様で示す）上に配置され、それらの電極１４Ａ，９４Ａは、相互に電気的に接続されている。また、ＬＥＤ装置１０１の４つ角に配置されるワイヤ側電極１４Ｂ（破線で示す）が、マウント基板９１のＶＣＣ電極９４Ｂ上に配置され、それらの電極１４Ｂ，９４Ｂは、相互に電気的に接続されている。 FIG. 3c is a plan view showing a state in which the LED device 101 is mounted on the mount substrate 91. The element-side electrodes 14A (shown by the broken line) of the LED device 101 are arranged on the GND electrode 94A (shown by the diagonal line pattern) of the mount substrate 91, and the electrodes 14A and 94A are electrically connected to each other. .. Further, the wire-side electrodes 14B (indicated by the broken line) arranged at the four corners of the LED device 101 are arranged on the VCS electrode 94B of the mount substrate 91, and the electrodes 14B and 94B are electrically connected to each other. Has been done.

ＬＥＤ素子１７から発せられた熱は、素子搭載マウント１３Ａおよびビア電極１６Ａを介して、基板１１裏面の素子側電極１４Ａおよびマウント基板９１のＧＮＤ電極９４Ａに伝導する。ＬＥＤ装置１０１の裏側に伝導した熱は、素子側電極１４ＡおよびＧＮＤ電極９４Ａにおいて、スルーホール１５Ａの位置を中心として、ＬＥＤ装置１０１の外縁、つまり、図３ｃにおいて上下左右の縁に向かって伝導する。ＬＥＤ装置１０１の裏側に伝導した熱は、最終的に、マウント基板９１のＧＮＤ電極９４Ａを伝導し、ＬＥＤ装置１０１の外側の領域に放出される。 The heat generated from the LED element 17 is conducted to the element side electrode 14A on the back surface of the substrate 11 and the GND electrode 94A of the mount substrate 91 via the element mounting mount 13A and the via electrode 16A. The heat conducted to the back side of the LED device 101 is conducted in the element side electrode 14A and the GND electrode 94A toward the outer edge of the LED device 101, that is, the upper, lower, left and right edges in FIG. 3c, centering on the position of the through hole 15A. .. The heat conducted on the back side of the LED device 101 finally conducts the GND electrode 94A of the mount substrate 91 and is released to the outer region of the LED device 101.

ＬＥＤ装置１０１の裏側電極、特にＬＥＤ素子が搭載された電極に連続する素子側電極を、素子（ないし素子に接続するビア電極）の位置を中心に四方に延在するように設けることにより、ＬＥＤ素子１７から発せられた熱を、効率的に、発散・分散することができる。具体的には、基板裏面の素子側電極を、基板１１の外縁を構成する４つの辺部各々に接する形状・構成にすることにより、ＬＥＤ装置１０１の伝熱・放熱効率を向上させることができる。 By providing the back side electrode of the LED device 101, particularly the element side electrode continuous with the electrode on which the LED element is mounted, so as to extend in all directions around the position of the element (or the via electrode connected to the element), the LED The heat generated from the element 17 can be efficiently dissipated and dispersed. Specifically, the heat transfer / heat dissipation efficiency of the LED device 101 can be improved by forming the element-side electrodes on the back surface of the substrate in contact with each of the four side portions constituting the outer edge of the substrate 11. ..

図３ｄは、第１の実施例によるＬＥＤ装置の変形例を示す底面図（下面図）である。ワイヤ側電極１４Ｂの形状は、扇状に限らず、たとえば矩形状であってもかまわない。 FIG. 3d is a bottom view (bottom view) showing a modified example of the LED device according to the first embodiment. The shape of the wire-side electrode 14B is not limited to a fan shape, and may be, for example, a rectangular shape.

また、ワイヤ側電極１４Ｂは、矩形状の基板１１の角部に設けられていなくてもよいし、４箇所に設けられていなくてもかまわない。素子側電極１４Ａの形状が基板１１の外縁を構成する４つの辺部各々に接する形状であれば、ワイヤ側電極１４Ｂの形状は特に限定されない。ただし、ＬＥＤ装置をマウント基板上に載置した際、ワイヤ側電極１４ＢをＶＣＣ電極９４Ｂに接触させるために、ワイヤ側電極１４Ｂは基板１１の外縁のいずれかに接して設けられることが好ましいであろう。 Further, the wire-side electrodes 14B may not be provided at the corners of the rectangular substrate 11, or may not be provided at four locations. The shape of the wire-side electrode 14B is not particularly limited as long as the shape of the element-side electrode 14A is in contact with each of the four side portions constituting the outer edge of the substrate 11. However, when the LED device is placed on the mount substrate, the wire side electrode 14B is preferably provided in contact with any of the outer edges of the substrate 11 in order to bring the wire side electrode 14B into contact with the VCS electrode 94B. Let's go.

図４ａおよび図４ｂは、第２の実施例によるＬＥＤ装置１０２を示す平面図（上面図）および底面図（下面図）である。第２の実施例によるＬＥＤ装置は、第１の実施例によるＬＥＤ装置と概ね同様の構成・構造を有する。ただし、第２の実施例は、複数のＬＥＤ素子を含む構成となっている。なお、図４ａにおいて、周壁体および封止材の図示を省略している。 4a and 4b are a plan view (top view) and a bottom view (bottom view) showing the LED device 102 according to the second embodiment. The LED device according to the second embodiment has substantially the same configuration and structure as the LED device according to the first embodiment. However, the second embodiment has a configuration including a plurality of LED elements. In FIG. 4a, the peripheral wall body and the sealing material are not shown.

図４ａに示すように、基板１１表面のほぼ中央には、４つのＬＥＤ素子１７が２×２の行列状に配置されている。ＬＥＤ素子１７各々において、下面電極が、直接、素子搭載ランド１３Ａと接触しており、上面電極が、ボンディングワイヤ１９を介して、ボンディングランド１３Ｂと接続している。素子搭載ランド１３Ａ各々の直下には、スルーホール１５Ａおよびビア電極１６Ａが設けられており、素子搭載ランド１３Ａは、ビア電極１６Ａを介して、基板１１裏面の電極に接続される。 As shown in FIG. 4a, four LED elements 17 are arranged in a 2 × 2 matrix at substantially the center of the surface of the substrate 11. In each of the LED elements 17, the lower surface electrode is in direct contact with the element mounting land 13A, and the upper surface electrode is connected to the bonding land 13B via the bonding wire 19. Through holes 15A and via electrodes 16A are provided directly below each of the element mounting lands 13A, and the element mounting lands 13A are connected to the electrodes on the back surface of the substrate 11 via the via electrodes 16A.

また、ボンディングランド１３Ｂ各々には、相互に離隔する配線１３Ｃが接続している。各配線１３Ｃは、それぞれ矩形状の基板１１の角部まで延在している。基板１１の角部には、スルーホール１５Ｂおよびビア電極１６Ｂが設けられており、配線１３Ｃは、ビア電極１６Ｂを介して、基板１１裏面の電極に接続される。 Further, wirings 13C that are separated from each other are connected to each of the bonding lands 13B. Each wiring 13C extends to a corner of the rectangular substrate 11. Through holes 15B and via electrodes 16B are provided at the corners of the substrate 11, and the wiring 13C is connected to the electrodes on the back surface of the substrate 11 via the via electrodes 16B.

図４ｂに示すように、基板１１裏面には、複数の素子搭載ランド１３Ａ（ないしビア電極１６Ａ）に接続する素子側電極１４Ａと、個々の配線１３Ｃ（ないしビア電極１６Ｂ）に接続するワイヤ側電極１４Ｂと、が設けられている。４つのＬＥＤ素子１７の下面電極は、基板１１裏面において同じ電極（つまり素子側電極１４Ａ）に接続されている。４つのＬＥＤ素子１７は、たとえば、電気的に並列に接続され、利用される。 As shown in FIG. 4b, on the back surface of the substrate 11, the element side electrode 14A connected to a plurality of element mounting lands 13A (or via electrode 16A) and the wire side electrode connected to each wiring 13C (or via electrode 16B) are connected. 14B and are provided. The bottom electrode of the four LED elements 17 is connected to the same electrode (that is, the element side electrode 14A) on the back surface of the substrate 11. The four LED elements 17 are electrically connected and used in parallel, for example.

以上、実施例に沿って本願を説明したが、これらは制限的なものではない。例えば材料、数値などは例示であって、これらに限るものではない。その他種々の変形、置換、改良等が可能なことは当業者に自明であろう。 Although the present application has been described above with reference to Examples, these are not limiting. For example, materials, numerical values, etc. are examples and are not limited thereto. It will be obvious to those skilled in the art that various other modifications, replacements, improvements, etc. are possible.

１１…支持基板、１３…導電層（表面電極）、１３Ａ…素子搭載ランド、１３Ｂ…ボンディングランド、１３Ｃ…配線、１４…導電層（裏面電極）、１４Ａ…素子側電極、１４Ｂ…ワイヤ側電極、１５…スルーホール、１６…ビア電極、１７…半導体発光素子（ＬＥＤ素子）、１９…ボンディングワイヤ、２１…周壁体、２３…凹部、２５…封止材、９０，９１…マウント基板，９４…電極、１００～１０２…半導体発光装置（ＬＥＤ装置）。 11 ... Support substrate, 13 ... Conductive layer (front surface electrode), 13A ... Element mounting land, 13B ... Bonding land, 13C ... Wiring, 14 ... Conductive layer (back surface electrode), 14A ... Element side electrode, 14B ... Wire side electrode, 15 ... Through hole, 16 ... Via electrode, 17 ... Semiconductor light emitting element (LED element), 19 ... Bonding wire, 21 ... Peripheral wall body, 23 ... Recession, 25 ... Encapsulant, 90, 91 ... Mount substrate, 94 ... Electrode , 100-102 ... Semiconductor light emitting device (LED device).

Claims (5)

外縁を構成する４つの角部と４つの辺部を有する矩形状の平面形状を有する支持基板と、
前記支持基板の表面に、相互に離隔して設けられた素子搭載電極とボンディング電極と、
前記支持基板の表面に設けられ、前記支持基板の外縁に沿う矩形枠状の配線部分と、
前記支持基板の表面に設けられ、前記ボンディング電極と前記矩形枠状の配線部分とを接続する接続配線部分と、
前記素子搭載電極の上面に固定され、前記素子搭載電極に電気的に接続された第１の電極を有し、さらに第２の電極を有する半導体発光素子と、
前記第２の電極と前記ボンディング電極とを電気的に接続するボンディングワイヤと、
前記支持基板の裏面に設けられた、第１の裏面電極と第２の裏面電極からなる導電領域のパターンであって、前記第１の裏面電極は、前記支持基板の４つの辺部それぞれに接する形状で延在し、前記第２の裏面電極は前記支持基板の４つの角部それぞれの近傍に設けられている導電領域のパターンと、
前記支持基板を貫通するビア電極であって、前記素子搭載電極と前記第１の裏面電極とを電気的に接続する第１のビア電極、および、前記配線部分と前記第２の裏面電極とを電気的に接続する４つの第２のビア電極、を含むビア電極と、
を備える半導体発光装置。 A support substrate having a rectangular planar shape having four corners and four sides constituting the outer edge ,
An element mounting electrode and a bonding electrode provided on the surface of the support substrate so as to be separated from each other,
A rectangular frame-shaped wiring portion provided on the surface of the support board and along the outer edge of the support board, and
A connection wiring portion provided on the surface of the support substrate and connecting the bonding electrode and the rectangular frame-shaped wiring portion, and a connection wiring portion.
A semiconductor light emitting device having a first electrode fixed to the upper surface of the element mounting electrode and electrically connected to the element mounting electrode, and further having a second electrode .
A bonding wire that electrically connects the second electrode and the bonding electrode,
It is a pattern of a conductive region composed of a first back surface electrode and a second back surface electrode provided on the back surface of the support substrate, and the first back surface electrode is in contact with each of the four sides of the support substrate . The second back electrode extends in a shape and has a pattern of a conductive region provided in the vicinity of each of the four corners of the support substrate.
A via electrode that penetrates the support substrate, the first via electrode that electrically connects the element mounting electrode and the first back surface electrode, and the wiring portion and the second back surface electrode . A via electrode, including four second via electrodes, which are electrically connected,
A semiconductor light emitting device. 前記第２の裏面電極は、４つの角部各々において、扇状の形状で設けられている請求項１記載の半導体発光装置。The semiconductor light emitting device according to claim 1, wherein the second back electrode is provided in a fan shape at each of the four corners. 前記支持基板を裏面から支持するマウント基板を更に有し、Further having a mount board that supports the support board from the back surface,
前記マウント基板表面は、前記支持基板裏面の４つの角部の４つの前記第２の裏面電極から外方に延在するＶＣＣ電極と中央部から４方向に延在する接地電極とを有する、The front surface of the mount substrate has a VCS electrode extending outward from the four second back surface electrodes at the four corners of the back surface of the support substrate and a ground electrode extending in four directions from the central portion.
請求項２記載の半導体発光装置。The semiconductor light emitting device according to claim 2. 前記支持基板の表面上に、前記半導体発光素子を取り囲むように配置された周壁体と、
前記周壁体の、前記半導体発光素子を取り囲む空間に充填された封止材と、
をさらに備える請求項１～３のいずれか１項記載の半導体発光装置。 A peripheral wall body arranged on the surface of the support substrate so as to surround the semiconductor light emitting device, and
A sealing material filled in the space surrounding the semiconductor light emitting device of the peripheral wall body, and
The semiconductor light emitting device according to any one of claims 1 to 3 , further comprising. 外縁を構成する４つの角部と４つの辺部を有する矩形状の平面形状を有し、前記４つの角部それぞれを含む均等な４つの並列領域を含む支持基板と、A support substrate having a rectangular planar shape having four corners and four sides constituting the outer edge, and including four equal parallel regions including each of the four corners.
前記各並列領域の表面に設けられた素子搭載電極と、The element-mounted electrodes provided on the surface of each parallel region and
前記各並列領域の表面に、前記素子搭載電極から離隔して設けられたボンディング電極と、A bonding electrode provided on the surface of each of the parallel regions at a distance from the element mounting electrode,
前記支持基板の表面に設けられた配線部分と、The wiring portion provided on the surface of the support board and
前記支持基板の表面に設けられ、前記ボンディング電極と前記配線部分とを接続する接続配線部分と、A connection wiring portion provided on the surface of the support substrate and connecting the bonding electrode and the wiring portion, and a connection wiring portion.
前記素子搭載電極の上面に固定され、前記素子搭載電極に第１の電極が電気的に接続された半導体発光素子と、A semiconductor light emitting device fixed to the upper surface of the element-mounted electrode and electrically connected to the element-mounted electrode with a first electrode.
前記半導体発光素子の第２の電極と前記ボンディング電極とを電気的に接続するボンディングワイヤと、 A bonding wire that electrically connects the second electrode of the semiconductor light emitting device and the bonding electrode,
前記支持基板の裏面に設けられ、第１の裏面電極と第２の裏面電極からなる導電領域のパターンであって、前記第１の裏面電極は、前記支持基板の４つの辺部それぞれに接する形状で延在し、前記第２の裏面電極は前記支持基板の４つの角部それぞれの近傍に設けられている導電領域のパターンと、It is a pattern of a conductive region provided on the back surface of the support substrate and is composed of a first back surface electrode and a second back surface electrode, and the first back surface electrode has a shape in contact with each of the four sides of the support substrate. The second back electrode is a pattern of a conductive region provided in the vicinity of each of the four corners of the support substrate.
前記支持基板を貫通するビア電極であって、前記素子搭載電極と前記第１の裏面電極とを電気的に接続する第１のビア電極、および、前記配線部分と前記第２の裏面電極とを電気的に接続する第２のビア電極と、を含むビア電極と、A via electrode that penetrates the support substrate, the first via electrode that electrically connects the element mounting electrode and the first back surface electrode, and the wiring portion and the second back surface electrode. A second via electrode that is electrically connected, and a via electrode that includes,
を有する半導体発光装置。A semiconductor light emitting device having.
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128512A (en) 2004-10-29 2006-05-18 Ngk Spark Plug Co Ltd Ceramic substrate for light emitting element
JP2006216764A (en) 2005-02-03 2006-08-17 Ngk Spark Plug Co Ltd Wiring board for packaging light-emitting device
WO2007058438A1 (en) 2005-11-18 2007-05-24 Amosense Co., Ltd. Electronic parts packages
JP2007149810A (en) 2005-11-25 2007-06-14 Kyocera Corp Wiring board for light-emitting element, and light-emitting device
JP2008172113A (en) 2007-01-15 2008-07-24 Ngk Spark Plug Co Ltd Wiring substrate
JP2008177445A (en) 2007-01-22 2008-07-31 Ngk Spark Plug Co Ltd Wiring substrate
JP2009021385A (en) 2007-07-12 2009-01-29 Sanyo Electric Co Ltd Electronic component
WO2011077900A1 (en) 2009-12-22 2011-06-30 シャープ株式会社 Light emitting diode element, light source device, surface light source illumination device, and liquid crystal display device
US20120199857A1 (en) 2009-10-07 2012-08-09 Digitaloptics Corporation East Wafer-Scale Emitter Package Including Thermal Vias

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128512A (en) 2004-10-29 2006-05-18 Ngk Spark Plug Co Ltd Ceramic substrate for light emitting element
JP2006216764A (en) 2005-02-03 2006-08-17 Ngk Spark Plug Co Ltd Wiring board for packaging light-emitting device
WO2007058438A1 (en) 2005-11-18 2007-05-24 Amosense Co., Ltd. Electronic parts packages
JP2007149810A (en) 2005-11-25 2007-06-14 Kyocera Corp Wiring board for light-emitting element, and light-emitting device
JP2008172113A (en) 2007-01-15 2008-07-24 Ngk Spark Plug Co Ltd Wiring substrate
JP2008177445A (en) 2007-01-22 2008-07-31 Ngk Spark Plug Co Ltd Wiring substrate
JP2009021385A (en) 2007-07-12 2009-01-29 Sanyo Electric Co Ltd Electronic component
US20120199857A1 (en) 2009-10-07 2012-08-09 Digitaloptics Corporation East Wafer-Scale Emitter Package Including Thermal Vias
WO2011077900A1 (en) 2009-12-22 2011-06-30 シャープ株式会社 Light emitting diode element, light source device, surface light source illumination device, and liquid crystal display device

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