JP2001244358A - Package for storing electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve conventional drawbacks wherein heat for melting a sealing material causes characteristic degradation of an electronic component stored in a package. SOLUTION: In a package for storing the electronic component wherein an insulating substrate 1 and a cover body 2 are connected via the sealing material 8 and the electronic component 3 is air-tightly stored within the package 4 constituted of the insulating substrate 1 and the cover body 2, the sealing material 8 comprises a glass component constituted of silver oxide of 20-40 wt.%, silver iodide of 5-20 wt.%, phosphorus pentoxide of 20-30 wt.%, boron oxide of 5-15 wt.%, and zinc oxide of 1-6 wt.%, and a filler of 10-30 wt.% of a solid solution constituted of zirconium phosphate, zirconium oxide, and niobium oxide. A glass softening point of the sealing material is equal to or higher than 260 deg.C. The cold temperature molten glass enables a more reliable hermetic seal and the electronic component 3 within the package 4 to operate with stability and normally over long term.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as semiconductor elements and piezoelectric vibrators. The present invention relates to a container for storing electronic components.

[0002]

2. Description of the Related Art Conventionally, electronic component storage containers for storing electronic components such as semiconductor devices including semiconductor integrated circuit devices or piezoelectric vibrators such as crystal vibrators and surface acoustic wave devices have been made of, for example, aluminum oxide. A recess made of an electrically insulating material such as a sintered body, and a recess for accommodating an electronic component at a substantially central portion of the upper surface or the lower surface, and a plurality of high melting point metals such as tungsten and molybdenum led out from the periphery of the recess to the lower surface. An insulating base having a metallized wiring layer, an external lead terminal attached to the metallized wiring layer via a brazing material such as silver brazing for electrically connecting an electronic component to an external electric circuit, and a lid. It is configured.

If the electronic component is, for example, a semiconductor device, the semiconductor device is formed of glass,
The electrodes of the semiconductor element and the metallized wiring layer are electrically connected to each other through an electrical connection means such as a bonding wire, and then fixed to the insulating base. A lid is bonded to the upper surface via a sealing material made of low-melting glass, and the semiconductor element is hermetically housed in a container formed of the insulating base and the lid, thereby forming a semiconductor device as a final product.

When the electronic component is a piezoelectric vibrator, for example, one end of the piezoelectric vibrator is bonded and fixed to a step formed on the bottom surface of the concave portion of the insulating base via an adhesive made of a conductive epoxy resin or the like. At the same time, each electrode of the piezoelectric vibrator is electrically connected to the metallized wiring layer, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass. An electronic component device as a final product is obtained by hermetically housing the piezoelectric vibrator in a container made of.

[0005] As a sealing material for joining the lid to the insulating base, for example, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1 to 6% by weight of silicon oxide, and zinc oxide are used. 0.
A glass component containing 5 to 3% by weight and bismuth oxide of 0.5 to 5% by weight, and a cordierite compound as a filler in a content of
Glass added with 20% by weight is used.

However, in this conventional electronic component storage container, the softening and melting temperature of glass, which is a sealing material for joining the lid to the insulating base, is about 400 ° C.
In recent years, since the heat resistance of electronic components has been reduced due to high frequency density and high integration, the insulating base and the lid are joined via a sealing material, and the electronic component is composed of the insulating base and the lid. When electronic components are hermetically housed inside an insulating container, the heat that melts the sealing material acts on the electronic components housed inside, causing the characteristics of the electronic components to deteriorate, and allowing the electronic components to operate normally. There was a problem that it was not possible.

[0007] With the recent rise of the global environmental protection movement, lead oxide has been designated as an environmentally hazardous substance, and the development of a sealing material that does not use lead oxide has been required.

In order to solve such problems, silver oxide is 40 to 60% by weight, silver iodide is 5 to 20% by weight, phosphorus pentoxide is 20 to 30% by weight, and zinc oxide is 1 to 6% by weight. A low-melting glass in which 10 to 50% by weight of a zirconium phosphate / zirconium oxide / niobium oxide solid solution as a filler is added to a glass component containing 0.1% by weight.

According to this low-melting glass, since the glass softening point is 350 ° C. or less, the insulating base and the lid are joined via the low-melting glass, and the inside of the container including the insulating base and the lid is placed inside the container. When housing electronic components, even if heat for melting the low-melting glass acts on the electronic components housed therein, the characteristics of the electronic components will not be degraded, and as a result, the electronic components will remain normal for a long period of time. And it is possible to operate stably.

[0010] Further, since this low melting point glass does not contain lead oxide, it does not impose a load on the global environment.

The low-melting-point glass, which is a sealing material between the insulating base and the lid, generally has fine pores of about 6% inside. Electronic components housed inside the container
In the case of a piezoelectric vibrator that requires a vacuum sealing of about 1.3 × 10-2 Pa, the gas in the pores inside the sealing material expands during the vacuum sealing, the pores become larger, and the larger pores are connected to each other. Forming larger pores, thereby lowering the reliability of hermetic sealing of the container composed of the insulating base and the lid, and lowering the reliability of such hermetic sealing. In order to prevent this, the low-melting glass is previously subjected to vacuum degassing to reduce the porosity in the low-melting glass to less than 1% before joining the insulating base and the lid.

[0012]

However, the low melting point glass, which is a sealing material for joining the insulating base and the lid in the conventional electronic component housing, is not suitable for vacuum degassing.
Crystallization of the glass proceeds at the same time as defoaming, and the viscosity of the glass increases. It takes a long time to reduce the porosity inside the glass, and it is difficult to reduce the porosity to less than 1%. There was a problem that.

The present invention has been devised in view of the above problems, and has as its object to hermetically seal an electronic component inside a container formed of an insulating base and a lid, thereby deteriorating its characteristics. An object of the present invention is to provide an electronic component storage container that can operate electronic components normally and stably for a long time without causing any trouble.

[0014]

SUMMARY OF THE INVENTION The present invention relates to an electronic component housing in which an insulating base and a lid are joined via a sealing material, and the electronic component is hermetically housed inside a container formed of the insulating base and the lid. Container, the sealing material is 20 to 40% by weight of silver oxide, 5 to 20% by weight of silver iodide, 20 to 30% by weight of phosphorus pentoxide, 5 to 15% by weight of boron oxide, zinc oxide And a solid solution of zirconium phosphate, zirconium oxide and niobium oxide as a filler in an amount of 10 to 30% by weight to a glass component consisting of 1 to 6% by weight.
It is characterized by being composed of added.

Further, according to the present invention, the glass softening point of the sealing material is reduced.
It is characterized by being at least 260 ° C. and having a porosity of less than 1%.

According to the electronic component storage container of the present invention, silver oxide is used as a sealing material for joining the insulating base and the lid.
~ 40% by weight, silver iodide 5 ~ 20% by weight, phosphorus pentoxide 20 ~
30% by weight, 5 to 15% by weight of boron oxide, 1 to 1% of zinc oxide
A glass having a low glass softening point of 350 ° C. or less, in which a solid solution of zirconium phosphate, zirconium oxide, and niobium oxide is added as a filler to a glass component comprising 6% by weight of 10 to 30% by weight, is used as an insulating substrate. When the electronic component is hermetically accommodated inside the container including the insulating base and the lid, the heat that melts the sealing material acts on the electronic component contained therein when the electronic component is hermetically sealed inside the container including the insulating base and the lid. Even though the characteristics of the electronic component do not deteriorate, the electronic component can be normally and stably operated for a long period of time.

According to the electronic component storage container of the present invention, when the porosity is reduced by defoaming the sealing material by vacuum, the crystallization of the glass does not proceed and the viscosity of the glass does not increase. Since the porosity of the glass can be easily reduced to less than 1%, the gas in the pores inside the sealing material expands when the container including the insulating base and the lid is hermetically sealed in a vacuum. Even if the pores do not combine to form large pores inside the sealing material, more reliable hermetic sealing becomes possible, and the electronic components inside the container can be normally and stably maintained for a long time. It can be activated.

Further, since the porosity of the sealing material is reduced to less than 1%, even if the gas in the pores inside the sealing material enters the inside of the container, the Q value is reduced by the electronic components inside the container. It is possible to suppress a decrease in the degree of vacuum inside the container, which has the adverse effect of causing corrosion or oxidative corrosion of the surface electrode, and as a result, electronic components are hermetically sealed without deteriorating its characteristics. In addition, stable operation can be performed for a long period of time.

Further, according to the electronic component storage container of the present invention, the thermal expansion coefficient of the sealing material can be approximated to the thermal expansion coefficient of the insulating base and the lid. By tightly bonding to the lid, the hermetic sealing of the container becomes better, and the electronic components housed inside the container can be operated normally and stably for a long period of time.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an embodiment of an electronic component storage container according to the present invention, and FIG. 2 is an enlarged sectional view of a main part thereof. These figures show examples in which the electronic component is a semiconductor element and the container for storing the electronic component is a package for storing a semiconductor element.

In these figures, 1 is an insulating base, and 2 is a lid. The semiconductor element 3 is formed by the insulating base 1 and the lid 2.
Is configured.

The insulating substrate 1 is provided with a recess 1a for forming a space for accommodating the semiconductor element 3 at the upper surface or substantially at the center of the lower surface thereof. The semiconductor element 3 is made of glass, It is bonded and fixed via an adhesive made of resin, brazing material, or the like.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, and a silicon carbide sintered body. If it is made of an aluminum oxide sintered body, an appropriate organic binder, a solvent, a plasticizer, a dispersant, etc. are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. The slurry is formed into a sheet by employing a sheet forming method such as a doctor blade method or a calender roll method, which is well known, to obtain a ceramic green sheet (ceramic green sheet). It is manufactured by performing a punching process, laminating a plurality of these, and firing at a high temperature of about 1600 ° C.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the upper surface, and each electrode of the semiconductor element 3 is provided with a bonding wire around the concave portion 1a of the metallized wiring layer 5. An external lead terminal 7 electrically connected to the external base 6 via a brazing material such as silver brazing is attached to a portion led out to the upper surface of the insulating base 1.

The metallized wiring layer 5 functions as a conductive path when each electrode of the semiconductor element 3 is electrically connected to an external electric circuit, and is formed of a high melting point metal such as tungsten, molybdenum, and manganese.

The metallized wiring layer 5 is made of a metal paste obtained by adding a suitable organic solvent, a solvent, a plasticizer, etc. to a high melting point metal powder such as tungsten, molybdenum, manganese or the like and mixing the metal paste with a thick film by a conventionally known screen printing method. A method is adopted in which a ceramic green sheet serving as the insulating substrate 1 is printed and applied in advance, and is fired at the same time as the ceramic green sheet, so that a predetermined pattern is formed from the periphery of the concave portion 1a of the insulating substrate 1 to the upper surface. .

The metallized wiring layer 5 is coated with a metal having good conductivity, good corrosion resistance and good wettability with a brazing material such as nickel and gold to a thickness of 1 to 20 μm on the surface thereof by plating. In addition, it is possible to effectively prevent oxidation corrosion of the metallized wiring layer 5 and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 extremely strong. it can. Therefore, oxidation corrosion of the metallized wiring layer 5 is prevented, and the metallized wiring layer 5 and the bonding wires 6 are prevented from being oxidized.
Connection and metallized wiring layer 5 and external lead terminal 7
In order to make the brazing firm, it is preferable that nickel, gold or the like is applied to the surface of the metallized wiring layer 5 to a thickness of 1 to 20 μm by plating.

On the other hand, the external lead terminals 7 brazed to the metallized wiring layer 5 serve to connect the semiconductor element 3 housed in the container 4 to an external electric circuit, and connect the external lead terminals 7 to the external electric circuit. By being connected, the semiconductor element 3 housed inside is electrically connected to an external electric circuit via the bonding wire 6, the metallized wiring layer 5, and the external lead terminal 7.

The external lead terminals 7 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and these ingots are subjected to a conventionally known metal working method such as a rolling method or a punching method. Thereby, it is formed in a predetermined shape.

The external lead terminal 7 may be provided with a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, having a thickness of 1 to 20 μm by plating. Can be effectively prevented, and good electrical connection between the external lead terminal 7 and the external electric circuit can be achieved. Therefore, the external lead terminals 7 are coated with nickel, gold, or the like on the surface by plating method.
It is preferable that it is applied to a thickness of μm.

Further, the insulating substrate 1 to which the external lead terminals 7 are attached is joined to the upper or lower surface of the insulating substrate 1 via a sealing material 8, thereby forming a container 4 comprising the insulating substrate 1 and the lid 2. The semiconductor element 3 is housed in an airtight manner.

The lid 2 has a function of closing the concave portion 1a provided in the insulating base 1, and is made of aluminum oxide sintered body, aluminum nitride sintered body, silicon nitride sintered body, silicon carbide sintered body, mullite. Made of an electrical insulating material such as a porous sintered body or a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. When the lid 2 is made of, for example, an aluminum oxide sintered body, a raw material powder such as aluminum oxide, silicon nitride, magnesium oxide, or calcium oxide is filled in a predetermined press die and pressed at a constant pressure to be molded. Thereafter, the molded article is manufactured by firing at a temperature of about 1500 ° C. In the case of an iron-nickel-cobalt alloy, the ingot is formed into a predetermined shape by applying a conventionally known metal working method such as a rolling method or a punching method.

Sealing material 8 for joining insulating base 1 and lid 2
Is 20 to 40% by weight of silver oxide, 5 to 20% by weight of silver iodide,
20 to 30% by weight of phosphorus pentoxide, 5 to 15% by weight of boron oxide,
It consists of a glass component comprising 1 to 6% by weight of zinc oxide and 10 to 30% by weight of a solid solution of zirconium phosphate, zirconium oxide and niobium oxide as filler.

Since the coefficient of thermal expansion of the sealing material 8 can be approximated to the coefficient of thermal expansion of the insulating base 1 and the lid 2, the sealing material 8 is firmly joined to the insulating base 1 and the lid 2. The hermetic sealing of the container 4 can be completed.
The semiconductor element 3 housed therein can be operated normally and stably for a long period of time.

Further, since the softening and melting temperature of the sealing material 8 is 350 ° C. or lower and the temperature of the sealing material made of glass is low, the insulating base 1 and the lid 2 are joined via the sealing material 8. When the semiconductor element 3 is hermetically accommodated in the container 4 including the insulating base 1 and the lid 2, even if heat for melting the sealing material acts on the semiconductor element 3 contained therein,
The characteristics of the semiconductor device 3 are not deteriorated, and as a result, the semiconductor element 3 can be normally and stably operated for a long period of time.

Further, the softening and melting temperature of the sealing material 8 is set to 260 ° C.
As described above, the sealing material is not softened and melted by the heat when the electronic component is mounted on the external electric circuit board, and the reliability of the hermetic sealing of the container 4 is not greatly reduced.

Furthermore, since the sealing material 8 does not contain lead oxide, there is no load on the global environment.

When the amount of silver oxide in the glass component of the sealing material 8 is less than 20% by weight, the softening and melting temperature of the glass increases, and it becomes difficult to hermetically seal the container 4 at a low temperature. On the other hand, if the content exceeds 40% by weight, the softening and melting temperature of the glass decreases, and the heat of mounting the electronic component on the external electric circuit board softens and melts the sealing material, thereby hermetically sealing the container 4. Tends to be greatly reduced. Therefore, the amount of silver oxide is preferably in the range of 20 to 40% by weight.

When the amount of silver iodide is less than 5% by weight, the softening and melting temperature of the glass becomes high, and
There is a tendency that hermetic sealing becomes difficult. On the other hand, if it exceeds 20% by weight, the chemical resistance of the glass decreases, and the reliability of hermetic sealing of the container 4 tends to greatly decrease. Therefore, the amount of silver iodide is preferably in the range of 5 to 20% by weight.

If the amount of phosphorus pentoxide is less than 20% by weight, the softening and melting temperature of the glass tends to be high, so that it is difficult to hermetically seal the container 4 at a low temperature, while the amount exceeds 30% by weight. And the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to greatly decrease. Therefore, the amount of phosphorus pentoxide is preferably in the range of 20 to 30% by weight.

If the content of boron oxide is less than 5% by weight, the crystallization of the glass proceeds, the viscosity of the glass increases, and it tends to be difficult to lower the porosity of the sealing material 8.
If the content is more than 10% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to greatly decrease.
Therefore, the amount of boron oxide is preferably in the range of 5 to 15% by weight.

If the zinc oxide content is less than 1% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing of the container 4 tends to decrease significantly. Of the sealing material 8 tends to be difficult to reduce. Therefore, the amount of zinc oxide is preferably in the range of 1 to 6% by weight.

The filler of a solid solution of zirconium phosphate, zirconium oxide, and niobium oxide adjusts the coefficient of thermal expansion of the sealing material 8 and places the sealing material 8 on the insulating base 1 and the lid 2.
Are firmly joined to greatly improve the airtight reliability of the container 4 and to improve the mechanical strength of the sealing material 8. When the filler content is less than 10% by weight, the mechanical strength of the sealing material 8 is reduced, and the thermal expansion coefficient of the sealing material 8 is greatly different from the thermal expansion coefficients of the insulating base 1 and the lid 2. Therefore, the sealing material 8 tends to be unable to be firmly joined to the insulating base 1 and the lid 2. On the other hand, if it exceeds 30% by weight, the fluidity of the sealing material 8 decreases, and it becomes difficult to hermetically seal at low temperatures. Therefore, the filler content is preferably in the range of 10 to 30% by weight.

In the present invention, it is important that the porosity of the sealing material 8 is less than 1%. Here, the porosity is a ratio of the area of the pores 9 to the cross-sectional area when a certain cross section of the sealing material 8 is observed.

If the porosity of the sealing material 8 is 1% or more, the gas in the pores 9 expands inside the sealing material 8 when the insulating substrate 1 and the lid 2 are vacuum-sealed and becomes large. The larger pores 9 are combined with each other to form larger pores, and the reliability of hermetic sealing of the container 4 including the insulating base 1 and the lid 2 is reduced. As a result, the semiconductor element 3 Normal and stable operation cannot be performed for a long time. Further, at the time of vacuum sealing, the gas in the pores 9 enters the inside of the container 4 and lowers the degree of vacuum inside the container 4, thereby giving an adverse effect that the surface electrode of the semiconductor element 3 is oxidized and corroded,
As a result, the semiconductor element 3 cannot be operated stably for a long time. Therefore, it is preferable that the porosity of the sealing material 8 be less than 1%.

The bonding and sealing of the insulating base 1 and the lid 2 is performed by first applying a sealing material 8 to the bonding area between the insulating base 1 and the lid 2 by employing a conventionally known screen printing method or the like. Then, the sealing material 8 is subjected to vacuum defoaming treatment at a temperature and a degree of vacuum higher than the bonding and sealing conditions for the insulating base 1 and the lid 2 to reduce the porosity in the sealing material 8 to 1%. Less than Next, the semiconductor element 3 is bonded and fixed to the concave portion 1a inside the insulating base 1 via an adhesive. Thereafter, the bonding surfaces of the insulating base 1 and the lid 2 are bonded together and vacuum-sealed at the softening / melting temperature of the sealing material 8, whereby the insulating base 1 and the lid 2 are hermetically bonded together and sealed. The porosity in the material 8 can be less than 1%.

The temperature of the vacuum degassing treatment of the sealing material 8 is
The temperature is preferably higher by 10 to 50 ° C. than the softening and melting temperature, and the degree of vacuum may be higher than the vacuum sealing condition of the insulating base 1 and the lid 2.

If the temperature of the vacuum defoaming treatment is lower than a temperature higher by 10 ° C. than the softening and melting temperature of the sealing material 8, the flowability of the glass is reduced and it takes time to defoam the sealing material 8. At the same time, it tends to be difficult to reduce the porosity to less than 1%. On the other hand, if the temperature exceeds 50 ° C. higher than the softening and melting temperature of the sealing material 8, the glass and the filler in the sealing material 8 react and combine to increase the softening and melting temperature, and the container 4 is hermetically sealed. There is a tendency that the heat at the time of stopping causes the characteristics of the semiconductor element 3 to deteriorate. Therefore, the temperature of the vacuum defoaming treatment is preferably 10 to 50 ° C. higher than the softening and melting temperature of the sealing material 8.

When the degree of vacuum in the vacuum defoaming process is lower than the vacuum sealing condition between the insulating base 1 and the lid 2, the porosity of the sealing material 8 is reduced by 1% by the vacuum defoaming process. Even if it is less than the above, the gas in the pores 9 tends to expand under higher vacuum conditions at the time of vacuum sealing, and the porosity tends to be 1% or more. On the other hand, the degree of vacuum in the vacuum defoaming process may be a degree of vacuum higher than the vacuum sealing condition between the insulating base 1 and the lid 2, but if the degree of vacuum is at least two orders of magnitude higher than the vacuum sealing condition, It tends to take a long time to obtain a degree of vacuum. Therefore, the degree of vacuum in the vacuum defoaming process is preferably a condition between a degree of vacuum higher than the vacuum sealing condition of the insulating base 1 and the lid 2 and a degree of vacuum two orders of magnitude higher. Specifically, if the required degree of vacuum in the vacuum sealing of the insulating base 1 and the lid 2 is 1.3 × 10 −2 Pa, the vacuum defoaming process is performed from a degree of vacuum higher than 1.3 × 10 −2 Pa to 1.3 × 10 −2 Pa. What is necessary is just to perform in the range of the degree of vacuum of 10-4 Pa or less.

Thus, according to the above-described package for housing a semiconductor element, the semiconductor element 3
Is bonded and fixed via an adhesive made of glass, resin, brazing material, or the like, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring layer 5 via a bonding wire 6. The lid 2 is bonded via an encapsulating material 8 so as to cover the concave portion 1 a on the upper surface, and the semiconductor element 3 is hermetically contained in a container 4 including the insulating base 1 and the lid 2, thereby obtaining a final product. Is completed.

Next, FIG. 3 is a sectional view showing another embodiment of the electronic component storage container according to the present invention, and FIG. 4 is an enlarged sectional view of a main part thereof. These figures show examples in which the electronic component is a piezoelectric vibrator such as a quartz oscillator, and the electronic component storage container is a piezoelectric resonator storage container.

In these figures, 11 is an insulating base and 12 is a lid. The insulating base 11 and the lid 12 constitute a container 14 for housing the piezoelectric vibrator 13.

The insulating base 11 is provided on its upper surface with a recess 11a having a step for forming a space for accommodating the piezoelectric vibrator 13. A piezoelectric vibrator 13 is bonded and fixed to the step portion of the concave portion 11a via an adhesive 15 made of resin.

The resinous adhesive 15 is made of, for example, a conductive epoxy resin or the like, and the piezoelectric vibrator 13 is placed on the stepped portion of the concave portion 11a of the insulating base 11 with the adhesive 15 interposed therebetween. The piezoelectric vibrator 13 is adhered and fixed to the insulating base 11 by subjecting the piezoelectric vibrator 13 to a thermosetting treatment and thermosetting.

The insulating substrate 11 is manufactured by the same method as the above-described insulating substrate 1.

A plurality of metallized wiring layers 16 are formed on the insulating base 11 from the step of the concave portion 11a to the bottom surface. Each electrode of the piezoelectric vibrator 13 is electrically connected to a portion of the metallized wiring layer 16 located at the step portion of the concave portion 11a via an adhesive 15 made of a conductive epoxy resin or the like. A wiring conductor of an external electric circuit is attached to the portion led out through a brazing material such as solder.

The metallized wiring layer 16 is formed of the same material as that of the metallized wiring layer 5 by a similar method. On the exposed surface of the metallized wiring layer 16, a metal such as nickel or gold having good conductivity, good corrosion resistance and good wettability with a brazing material is applied to a thickness of 1 to 20 μm by plating.

A lid 12 is joined to the upper surface of the insulating base 11 to which the piezoelectric vibrator 13 is adhered and fixed via a sealing member 17, whereby a container 14 comprising the insulating base 11 and the lid 12 is formed.
The piezoelectric vibrator 13 is hermetically accommodated in the inside.

The lid 12 is manufactured by the same method as the lid 2 described above.

In this case as well, it is important that the porosity of the sealing material 17 is less than 1%. As in the example shown in FIGS. 1 and 2, first, the joining of the insulating base 11 and the lid 12 is performed. A sealing material 17 is previously applied to the region by using a conventionally known screen printing method or the like, and then sealed at a temperature and a vacuum higher than the bonding and sealing conditions for the insulating base 11 and the lid 12. The material 17 is subjected to vacuum defoaming treatment to reduce the porosity in the sealing material 17 to less than 1%, and then the piezoelectric vibrator 13 is bonded and fixed to the concave portion 11a having a step inside the insulating base 11 via an adhesive. Further, the bonding surfaces of the insulating base 11 and the lid 12 are bonded to each other, and the insulating base 11 and the lid 12 are hermetically bonded and sealed by vacuum degassing at the softening and melting temperature of the sealing material 17. 1% porosity in stopper 17
Can be less than.

The sealing material 17 is composed of a glass component and a filler, and is excellent in moisture resistance. Therefore, even if moisture contained in the air tries to enter the inside of the container 14 through the sealing material 17, the sealing material 17 is not filled. Moisture ingress is effectively prevented and, as a result,
The surface electrode of the piezoelectric vibrator 13 accommodated in the inside 14 is hardly oxidized and corroded, and the piezoelectric vibrator 13 can be operated normally.

Thus, according to the electronic component storage container of the present invention, one end of the piezoelectric vibrator 13 is bonded and fixed to the step portion provided in the concave portion 11a of the insulating base 11 via the adhesive 15 made of conductive epoxy resin or the like. At the same time, the respective electrodes of the piezoelectric vibrator 13 are electrically connected to the metallized wiring layer 16, and then the lid 12 is sealed on the upper surface of the insulating base 11 so as to cover the recess 11 a.
And a container composed of an insulating base 11 and a lid 12
The piezoelectric vibrator 13 as a final product is completed by housing the piezoelectric vibrator 13 in an airtight manner inside the 14.

The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, in the above-described example, an electronic component storage container for housing a semiconductor element or a piezoelectric vibrator has been described, but the present invention relates to an electronic component storage container for housing a piezoelectric ceramic vibrator or a surface acoustic wave element. Is also applicable.

[0065]

According to the electronic component storage container of the present invention,
Silver oxide is used as a sealing material to join the insulating base and the lid.
20-40 wt%, silver iodide 5-20 wt%, phosphorus pentoxide 20
~ 30 wt%, boron oxide 5-15 wt%, zinc oxide 1
A glass component consisting of up to 6% by weight and a solid solution of zirconium phosphate, zirconium oxide and niobium oxide added as filler at 10 to 30% by weight. When the base and the lid are joined via a sealing material, and the electronic component is air-tightly housed inside the container including the insulating base and the lid, heat for melting the sealing material is applied to the electronic component housed therein. Even if it acts, the characteristics of the electronic component do not deteriorate, and as a result, the electronic component can be operated normally and stably for a long period of time.

According to the electronic component storage container of the present invention, when the porosity is reduced by vacuum degassing the sealing material, the crystallization of the glass does not proceed and the viscosity of the glass does not increase. Since the porosity of the glass can be easily reduced to less than 1%, the gas in the pores inside the sealing material expands when the container including the insulating base and the lid is hermetically sealed in a vacuum. Even if the pores do not combine to form large pores inside the sealing material, more reliable hermetic sealing becomes possible, and the electronic components inside the container can be normally and stably maintained for a long time. It can be activated.

Further, since the porosity of the sealing material is reduced to less than 1%, even if gas in the pores inside the sealing material enters the inside of the container, the Q value is reduced to the electronic components inside the container. It is possible to suppress a decrease in the degree of vacuum inside the container, which has the adverse effect of causing corrosion or oxidative corrosion of the surface electrode, and as a result, electronic components are hermetically sealed without deteriorating its characteristics. In addition, stable operation can be performed for a long period of time.

Further, according to the electronic component storage container of the present invention, the thermal expansion coefficient of the sealing material can be approximated to the thermal expansion coefficient of the insulating base and the lid. By tightly bonding to the lid, the hermetic sealing of the container becomes better, and the electronic components housed inside the container can be operated normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage container according to the present invention.

FIG. 2 is an enlarged sectional view of a main part of the electronic component storage container shown in FIG.

FIG. 3 is a cross-sectional view showing another example of the embodiment of the electronic component storage container of the present invention.

4 is an enlarged sectional view of a main part of the electronic component storage container shown in FIG. 3;

[Explanation of symbols]

 1, 11 ... insulating base 2, 12 ... lid 3, ... semiconductor element (electronic component) 13, ... piezoelectric vibrator (electronic component) ) 4, 14 ... container 8, 17 ... sealing material 9, 18 ... pores

Continued on the front page F-term (reference) 4G062 AA09 BB08 BB09 DA01 DB01 DC03 DC04 DD04 DE03 DF01 EA01 EA10 EB01 EC01 ED01 EE01 EF01 EG01 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 F01H01 GA01 GA01 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ08 JJ10 KK01 KK03 KK05 KK07 KK10 MM08 MM31 MM35 NN32 PP11

Claims (2)

[Claims] 1. An electronic component storage container in which an insulating base and a lid are joined via a sealing material, and an electronic component is hermetically stored inside a container including the insulating base and the lid.
The sealing material contains 20 to 40% by weight of silver oxide and 5% of silver iodide.
To 20% by weight, 20 to 30% by weight of phosphorus pentoxide, 5 to 15% by weight of boron oxide, and 1 to 6% by weight of zinc oxide, zirconium phosphate, zirconium oxide, and niobium oxide as fillers. Characterized in that a solid solution of 10 to 30% by weight is added thereto. 2. The electronic component container according to claim 1, wherein the sealing material has a glass softening point of 260 ° C. or higher and a porosity of less than 1%.