JP3464143B2 - Electronic component storage package - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component housing package for hermetically housing electronic components such as semiconductor elements and piezoelectric vibrators. 2. Description of the Related Art Conventionally, electronic component housing packages for housing electronic devices such as semiconductor devices such as semiconductor integrated circuit devices or piezoelectric vibrators such as crystal vibrators and surface acoustic wave devices have been known. , Aluminum oxide (Al ₂
O ₃ ) made of an electrically insulating material such as a sintered body, and a recess for accommodating an electronic component at a substantially central portion of an upper surface or a lower surface thereof and, for example, tungsten or molybdenum derived from the periphery of the recess to the lower surface. An insulating base having a plurality of metallized wiring layers made of a high melting point metal powder, and an external body attached to the metallized wiring layers via a brazing material such as silver brazing in order to electrically connect electronic components to an external electric circuit. It is composed of a lead terminal and a lid. In the case where the electronic component is, for example, a semiconductor element, the semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating base via an adhesive made of glass, resin, brazing material or the like. The electrode and the metallized wiring layer are electrically connected via an electrical connection such as a bonding wire, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass, A semiconductor device as a final product is obtained by hermetically housing a semiconductor element in a container including an insulating base and a lid. When the electronic component is, for example, a piezoelectric vibrator, one end of the piezoelectric vibrator is bonded to a step formed on the bottom surface of the concave portion of the insulating base via an adhesive made of a conductive epoxy resin or the like. At the same time, the electrodes of the piezoelectric vibrator are electrically connected to the metallized wiring layer, and then the lid is joined to the upper surface of the insulating base via a sealing material made of low-melting glass. An electronic component device as a final product is obtained by hermetically housing a semiconductor element in a container formed of the following. As a sealing material for joining the lid to the insulating substrate, generally, 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1 to 6% by weight of silicon oxide, and 0.5 to 5% by weight of bismuth oxide Glass is used in which a glass component containing 5% by weight and 0.5 to 3% by weight of zinc oxide is added with 9 to 19% by weight of a cordierite-based compound as a filler and 10 to 20% by weight of a tin titanate-based compound. ing. However, in this conventional package for housing electronic parts, ceramics such as an aluminum oxide (Al ₂ O ₃ ) sintered body forming an insulating base and a lid, and glass forming a sealing material are both used. Since there is not much ability to block electromagnetic waves, when mounted together with other electronic components on an external electric circuit board, etc., there is also a problem that mutual interference of electromagnetic waves between adjacent electronic components may cause malfunctions of the electronic components. Was. In particular, recently, electronic components have been mounted on an external electric circuit board at a very high density, and the distance between adjacent electronic components has become extremely small. The problem due to the mutual interference of electromagnetic waves has become extremely large. . In order to solve the above-mentioned drawbacks, the applicant of the present invention first forms a metal layer below a mounting portion on which electronic components are mounted, and at the upper surface, a part of the metal layer is led out through a through-hole conductor. (Japanese Patent Application No. 9-291299) has proposed an electronic component housing package composed of an insulating base, a conductive lid and a conductive sealing material. According to this electronic component storage package, a conductive lid is bonded to the upper surface of the insulating base via a conductive sealing material, and the metal layer provided on the insulating base and the conductive lid are connected to each other through-hole conductor. And electronically connected with the conductive encapsulant, enclosing the electronic component from above and below with the metal layer and the conductive lid, effectively preventing the electromagnetic wave from acting on the electronic component housed inside from outside. Thus, the electronic component can be operated normally and stably for a long period of time. However, in this electronic component housing package, the diameter of the through-hole conductor for leading a part of the metal layer to the upper surface of the insulating base is about 0.2 mm, and the exposed plane area is about 0.2 mm. 0.125mm ² is as narrow as
Also, since the volume resistance of the conductive sealing material is as high as about 1 × 10 ⁴ Ω or the like, even if the conductive lid and the through-hole conductor provided on the insulating base are connected via the conductive sealing material, The electrical connection has high conduction resistance and low reliability, and as a result, it is impossible to reliably and completely protect the electronic component from external electromagnetic waves by securely connecting the metal layer and the conductive lid. There was a problem to be solved. The present invention has been devised in view of the above-mentioned drawbacks, and its object is to reliably prevent electromagnetic waves from acting on electronic components housed in a container, and to keep electronic components normal and stable for a long period of time. An object of the present invention is to provide an electronic component storage package that can be operated at a low speed. According to the present invention, there is provided an insulating base having a mounting portion on which an electronic component is mounted on an upper surface, a metal layer provided below the mounting portion, A through-hole conductor connected to the metal layer, the other end of which is exposed on the upper surface of the insulating base; and a conductive lid, and the upper surface of the insulating base including a region where the through-hole conductor is exposed is electrically conductive. The lid is joined via a conductive sealing material, and the electronic component is hermetically housed inside a container including the insulating base and the conductive lid while electrically connecting the metal layer and the conductive lid. An electronic component housing package having the above-mentioned structure, wherein a plurality of the through-hole conductors are provided, and a total exposed flat area of an upper surface of the insulating substrate is 1.0 mm ² or more. According to the electronic component storage package of the present invention, a metal layer is provided below the mounting portion of the insulating base on which the electronic component is mounted, and one end is connected to the metal layer and the other end is the insulating base. A plurality of through-hole conductors exposed on the upper surface are formed, and the total exposed flat area of the through-hole conductors on the upper surface of the insulating base is set to be 1.0 mm ² or more. When joining via a sealing material, the conductive sealing material comes into contact with a plurality of through-hole conductors over an extremely large area to ensure that the conductive lid and the metal layer are electrically connected with low conduction resistance As a result, it is possible to reliably prevent the electromagnetic wave from acting on the electronic component and to operate the electronic component normally and stably for a long period of time. Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage package according to the present invention, FIG. 2 is an enlarged cross-sectional view of the main part, and FIG. 3 is an enlarged plan view of the main part. This is an example in which the semiconductor device is a semiconductor device and the electronic component housing package is a semiconductor device housing package. In FIG. 1, reference numeral 1 denotes an insulating base, and 2 denotes a conductive lid. The insulating base 1 and the conductive lid 2 constitute a container 4 for housing the semiconductor element 3. The insulating substrate 1 is provided with a concave mounting portion 1a in which the semiconductor element 3 is mounted and accommodated at a substantially central portion of the upper surface thereof. The semiconductor element 3 is made of glass, resin, or the like.
It is bonded and fixed via an adhesive made of brazing material or the like. The insulating substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, a room aluminum sintered body,
It is made of an electrically insulating material such as a silicon carbide sintered body.
In the case of an aluminum oxide-based sintered body, an appropriate organic binder, a solvent, a plasticizer, a dispersant, etc. are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide, and the mixture is mixed to obtain a slurry. Then, the slurry is formed into a sheet by using a sheet forming method such as a doctor blade method or a calender roll method, which is well known in the art, to obtain a ceramic green sheet (ceramic green sheet). 1600 ° C
It is manufactured by firing at a high temperature. A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the mounting portion 1a to the upper surface. Each electrode of the semiconductor element 3 is provided around the mounting portion 1a of the metallized wiring layer 5. Are electrically connected via bonding wires 6, and external lead terminals 7 connected to an external electric circuit are attached via a brazing material such as silver brazing to a portion led out to the upper surface of the insulating base 1. ing. The metallized wiring layer 5 functions as a conductive path when each electrode of the semiconductor element 3 is electrically connected to an external electric circuit, and is formed of a refractory metal powder of tungsten, molybdenum, manganese or the like. The metallized wiring layer 5 is made of tungsten,
A metal paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and the like to a high melting point metal powder such as molybdenum, manganese, or the like is used as the insulating substrate 1 by employing a conventionally known thick film method such as a screen printing method. The mounting portion 1a of the insulating base 1 is preliminarily printed and applied to the ceramic green sheet and fired at the same time as the ceramic green sheet.
A predetermined pattern is formed from the periphery to the upper surface. The metallized wiring layer 5 is formed by depositing a metal having good conductivity, good corrosion resistance and good wettability with a brazing material to a thickness of 1 to 20 μm, such as nickel or gold, on its surface by plating. In other words, it is possible to effectively prevent oxidation corrosion of the metallized wiring layer 5 and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 extremely strong. Can be. Accordingly, oxidation corrosion of the metallized wiring layer 5 is prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external lead terminals 7 are prevented.
In order to make the brazing strong, it is preferable that nickel, gold, or the like is applied to the surface of the metallized wiring layer 5 by plating to a thickness of 1 to 20 μm. An external lead terminal 7 is brazed to the metallized wiring layer 5 formed on the insulating base 1,
The external lead terminal 7 functions to connect the semiconductor element 3 housed inside the container 4 to an external electric circuit, and the semiconductor element 3 housed inside by connecting the external lead terminal 7 to the external electric circuit is bonded. It is electrically connected to an external electric circuit via the wire 6, the metallized wiring layer 5, and the external lead terminal 7. The external lead terminals 7 are made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
It is formed in a predetermined shape by subjecting an ingot such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method. The external lead terminal 7 may be provided with a metal having good conductivity and excellent corrosion resistance, such as nickel or gold, having a thickness of 1 to 20 μm by plating. 7 can be effectively prevented, and the electrical connection between the external lead terminal 7 and the external electric circuit can be made good. Therefore, it is preferable that nickel, gold, or the like be applied to the surface of the external lead terminal 7 by plating to a thickness of 1 to 20 μm. Further, the insulating base 1 is provided with a metal layer 8 below the mounting portion 1a, and the metal layer 8 surrounds the semiconductor element 3 housed therein with a conductive lid 2 described later. The element 3 prevents the electromagnetic wave from acting on the element 3 from the outside, and functions to stably operate the semiconductor element 3. The metal layer 8 is made of, for example, tungsten,
Conventionally known screen printing method using a metal paste made of a high melting point metal powder such as molybdenum and manganese, obtained by adding an appropriate organic binder, solvent, plasticizer, etc. to the high melting point metal powder such as tungsten, molybdenum and manganese. Is applied to a ceramic green sheet serving as the insulating substrate 1 in advance by employing a thick film method such as that described above, and is baked simultaneously with the ceramic green sheet to thereby form the insulating substrate 1
Is disposed below the mounting portion 1a. One end of the through-hole conductor 9 is connected to a part of the metal layer 8, and the other end of the through-hole conductor 9 is connected to the upper surface of the insulating base 1 by the conductive lid 2. It is exposed in a region to be joined via the material 10. The through-hole conductor 9 functions to electrically connect the conductive lid 2 to the metal layer 8. For example, a material of the same quality as the metal layer 8, specifically, such as tungsten, molybdenum, manganese or the like is used. It is made of high melting point metal powder. The through-hole conductor 9 is preliminarily formed by punching a ceramic green sheet serving as the insulating substrate 1 by using a punching method, and an organic binder, a solvent, and the like are added to the tungsten powder and the like in the hole. It is formed by filling a metal paste obtained by addition and mixing. A plurality of the through-hole conductors 9 are formed, and the total of the plane areas exposed on the upper surface of the insulating base 1 is 1.0 mm ² or more. The plurality of the through-hole conductors 9 are formed by setting the total area of the through-hole conductors 9 exposed on the upper surface of the insulating substrate 1 to 1.0 mm ² or more, and setting the conductive encapsulant 1
In order to increase the contact area with the conductive sealing member 10 on the upper surface of the insulating base 1, the total exposed flat area of the through-hole conductor 9 is set to 1.0 mm ² or more. When the conductive sealing material 10 contacts the plurality of through-hole conductors 9 over a very large area, the conductive lid 2 and the metal layer 8 are securely and electrically connected with a low conduction resistance. As a result, it is possible to reliably prevent the electromagnetic wave from acting on the electronic component, and to operate the electronic component normally and stably for a long period of time. The plurality of through-hole conductors 9 have a total plane area exposed on the upper surface of the insulating substrate 1 of 1.0 mm.
^If it is less than ² , the connection between the metal layer 8 and the conductive lid 2 via the through-hole conductor 9 becomes incomplete, and it becomes impossible to effectively prevent the electromagnetic wave from acting on the electronic component. The total of the plane areas of the plurality of through-hole conductors 9 exposed on the upper surface of the insulating base 1 is specified to be 1.0 mm ² or more. Further, the metal layer 8 and the through-hole conductor 9
The conductive lid 2 is joined to the upper surface of the insulating base 1 via a conductive sealing material 10, and the semiconductor element 3 is hermetically accommodated in a container 4 including the insulating base 1 and the conductive lid 2. At the same time, the conductive lid 2 and the through-hole conductor 9 are electrically connected. The conductive lid 2 is made of an aluminum oxide sintered body having a surface coated with a metal film such as copper or aluminum, or a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. Mounting portion 1a of insulating base 1
The semiconductor element 3 mounted on the semiconductor element 3 is hermetically sealed, and the semiconductor element 3 is surrounded by the metal layer 8 disposed on the insulating base 1 to prevent electromagnetic waves from acting on the semiconductor element 3 from the outside. 3 functions to operate stably. Further, a conductive lid 2 is provided on the insulating base 1.
Is used to seal the semiconductor element 3 in a container 4 comprising the insulating base 1 and the conductive lid 2 in an airtight manner, and the metal layer 8 of the insulating base 1 and the conductive lid 2 Are electrically connected to each other, and are made of, for example, glass or organic resin containing metal powder. The conductive sealing material 10 is made of lead oxide 5
A glass component containing 0 to 65% by weight, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide and 10 to 20% by weight of tin oxide, and lead titanate as a filler. When the conductive glass is formed of a conductive glass to which 26 to 45% by weight of a compound is added and 5 to 20% by weight of copper, an iron-nickel alloy, or an iron-nickel-cobalt alloy, the melting temperature of the softening bath is reduced. The temperature is as low as 320 ° C. or less. Therefore, when the insulating base 1 and the conductive lid 2 are joined and the container 4 is hermetically sealed, the sealing temperature can be reduced to a low temperature. Even if the heat for melting 10 acts on the semiconductor element 3 housed therein, the characteristics of the semiconductor element 3 are not degraded, and the semiconductor element 3 can be operated normally and stably for a long period of time. Become. Since the conductive glass has a softening bath melting temperature as low as 320 ° C. or less, the semiconductor element 3 is
When the semiconductor device 3 is bonded and fixed to the mounting portion 1a via a bonding material such as a resin, the characteristics of the bonding and fixing of the semiconductor element 3 are not significantly deteriorated by the heat of softening and melting the conductive sealing material 10. The semiconductor element 3 can be extremely firmly adhered and fixed to the mounting portion 1a of the insulating base 1, and the semiconductor element 3 can always be operated stably. The conductive sealing material 10 is made of lead oxide 50
To 65% by weight, 2 to 10% by weight of boron oxide, 10 to 30% by weight of lead fluoride, 1 to 6% by weight of zinc oxide, 10 to 20% by weight of tin oxide, and a lead titanate as a filler When the compound is formed of conductive glass containing 26 to 45% by weight of a compound, 5 to 20% by weight of copper, an iron-nickel alloy, and 5 to 20% by weight of an iron-nickel-cobalt alloy, if the amount of lead oxide is less than 50% by weight, the glass Of the semiconductor element 3 is degraded by the heat generated when the container 4 is hermetically sealed, and if it exceeds 65% by weight, the chemical resistance of the glass decreases, 4, the reliability of hermetic sealing is greatly reduced. Therefore, it is preferable that the amount of the lead oxide be in the range of 50 to 65% by weight. If the amount of boron oxide is less than 2% by weight, the crystallization of the glass proceeds and the fluidity is reduced, and the hermetic sealing of the container 4 becomes difficult. Of the semiconductor element 3 is deteriorated by heat generated when the container 4 is hermetically sealed. Therefore, the amount of the boron oxide is 2 to 10
It is preferable to set it in the range of% by weight. On the other hand, if the amount of lead fluoride is less than 10% by weight, the softening and melting temperature of the glass increases, and the heat generated when the container 4 is hermetically sealed causes deterioration of the characteristics of the semiconductor element 3. If the content is 30% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. Therefore, it is preferable that the amount of the lead fluoride be in the range of 10 to 30% by weight. If the amount of zinc oxide is less than 1% by weight, the chemical resistance of the glass is reduced, and the reliability of hermetic sealing of the container 4 is greatly reduced. As the crystallization proceeds, the fluidity is greatly reduced, and it becomes difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of the zinc oxide be in the range of 1 to 6% by weight. If the amount of bismuth oxide is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat at the time of hermetically sealing the container 4 causes deterioration of the characteristics of the semiconductor element 3, On the other hand, if it exceeds 20% by weight, the crystallization of the glass proceeds and the fluidity is greatly reduced, making it difficult to hermetically seal the container 4. Therefore, the amount of bismuth oxide is preferably set in the range of 10 to 20% by weight. The lead titanate-based compound added as a filler to the conductive sealing material 10 adjusts the coefficient of thermal expansion of the conductive sealing material 10, and forms a conductive material on the insulating base 1 and the conductive lid 2. The sealing material 10 is firmly joined, and has the effect of greatly improving the reliability of hermetic sealing of the container 4. If the amount is less than 26% by weight, the coefficient of thermal expansion of the conductive sealing material 10 is insulative. 1 and the coefficient of thermal expansion of the conductive lid 2 is so different that the conductive sealing material 10 cannot be firmly joined to the insulating base 1 and the conductive lid 2. The fluidity of the conductive sealing material 10 is reduced, and it is difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of the lead titanate-based compound is in the range of 26 to 45% by weight. Copper, iron-nickel alloy, iron-nickel-cobalt alloy added to the conductive sealing material 10 as a filler is a conductivity-imparting material for the conductive sealing material 10,
When the amount is less than 5% by weight, the conductivity of the conductive sealing material 10 is reduced, and the conductive lid 2 is securely attached to the frame-shaped metal layer 9 connected to the metal layer 8 of the insulating base 1. Electrical connection cannot be made, and if it exceeds 20% by weight, the fluidity of the conductive sealing material 10 is reduced, and it becomes difficult to hermetically seal the container 4. Therefore, the amount is 5 to 20
It is preferable to set it in the range of% by weight. Thus, according to the above-described package for accommodating a semiconductor element, the semiconductor element 3 is bonded and fixed to the mounting portion 1a of the insulating base 1 via an adhesive made of glass, resin, brazing material or the like. The electrodes are electrically connected to the metallized wiring layer 5 via bonding wires 6,
Thereafter, the conductive lid 2 is joined to the upper surface of the insulating base 1 via the conductive sealing material 10, and the metal layer 8 of the insulating base 1 and the conductive lid 2 are electrically connected while the insulating base 1 is electrically connected. The semiconductor device 3 as a final product is completed by hermetically housing the semiconductor element 3 in a container 4 composed of the semiconductor device 3 and the conductive lid 2. It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. Although the electronic component housing package for housing the element has been illustrated, the electronic component is a piezoelectric magnetic vibrator, a surface acoustic wave device, or the like, and can be applied to an electronic component housing package for housing the same. Further, in the above-mentioned example, the package for storing the electronic parts in which the external lead terminals 7 are brazed to the metallized wiring layer 5 is exemplified. However, the present invention is not limited to this, and the metallized wiring layer is formed on the lower surface of the insulating base. It may be a terminal that is derived and used as it is as a terminal that is directly connected to an external electric circuit. According to the electronic component housing package of the present invention, a metal layer is provided below the mounting portion of the insulating base on which the electronic component is mounted, and one end is connected to the metal layer. A plurality of through-hole conductors whose other ends are exposed on the upper surface of the insulating base are formed, and the total exposed area of the through-hole conductors on the upper surface of the insulating base is 1.0 mm ² or more. When the lid is joined via the conductive sealing material, the conductive sealing material comes into contact with a plurality of through-hole conductors over an extremely large area, so that the conductive lid and the metal layer are reliably and lowly conductive. As a result, it is possible to prevent electromagnetic waves from acting on the electronic component and to operate the electronic component normally and stably for a long period of time.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage package according to the present invention. FIG. 2 is an enlarged sectional view of a main part of the electronic component storage package shown in FIG. FIG. 3 is an enlarged plan view of the vicinity of a mounting portion of an insulating base of the electronic component storage package shown in FIG. 1; [Description of Signs] 1 ... Insulating base 2 ... Conductive lid 3 ... Semiconductor element (electronic component) 4 ... Container 8 Metal layer 9 Through-hole conductor 10 Conductive sealing material

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-216652 (JP, A) JP-A-11-126846 (JP, A) JP-A 8-162559 (JP, A) (58) Investigation Field (Int.Cl. ⁷ , DB name) H01L 23/00 H01L 23/04 H01L 23/06

Claims (1)

(57) Claims 1. An insulating base having a mounting portion on which an electronic component is mounted on an upper surface, and a metal layer disposed below the mounting portion, and one end of the insulating base. A conductive lid which is connected to the layer and has the other end exposed on the upper surface of the insulating base, and a conductive lid on the upper surface of the insulating base including a region where the through-hole conductor is exposed. Are bonded via a conductive sealing material so that the metal component and the conductive lid are electrically connected to each other so that the electronic component is hermetically accommodated inside a container including the insulating base and the conductive lid. An electronic component storage package, comprising: a plurality of through-hole conductors; and a total exposed plane area of an upper surface of an insulating substrate is 1.0 mm ² or more.