JP3181011B2 - Package for storing semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device housing package for housing a semiconductor device therein.

[0002]

2. Description of the Related Art Conventionally, semiconductor device housing packages for housing semiconductor devices, particularly semiconductor integrated circuit devices such as LSIs, are generally made of an electrically insulating material such as an aluminum oxide sintered body as shown in FIGS. And a recess 11a forming a space for accommodating the semiconductor integrated circuit element 15 at a substantially central portion of the upper surface thereof, and tungsten, molybdenum, manganese, or the like drawn out from the periphery of the recess 11a to the outer peripheral edge. One end is brazed to the metallized wiring layer 12 to electrically connect each electrode of the semiconductor integrated circuit element 15 to an external electric circuit, and an insulating substrate 11 having a plurality of metallized wiring layers 12 made of a high melting point metal powder. And an external lead terminal 13 made of an iron-nickel-cobalt alloy or an iron-nickel alloy, and a cover 14. The semiconductor integrated circuit element 15 is bonded and fixed to the bottom surface of the concave portion 11a via an adhesive such as glass, resin, brazing material or the like, and each electrode of the semiconductor integrated circuit element 15 is connected to the metallized wiring layer 12 via a bonding wire 16. After connection, the lid 1 is placed on the upper surface of the insulating base 11.
4 are joined via a sealing material made of glass, resin, brazing material, or the like, and the semiconductor integrated circuit element 15 is hermetically accommodated in a container formed of the insulating base 11 and the lid 14 to form a semiconductor device.

Such a semiconductor device is provided on the other end side of the external lead terminal 13, that is, the insulating base 11 of the external lead terminal 13.
A region projecting outward from the side surface of the container, which is composed of the container and the lid 14, is connected to a wiring conductor of an external electric circuit board via solder or the like, whereby the container is hermetically housed inside the container. Each of the electrodes of the semiconductor integrated circuit element 15 is electrically connected to an external electric circuit via the bonding wire 16, the metallized wiring layer 12, and the external lead terminal 13.

[0004]

However, recently,
With the rapid increase in the density and integration of semiconductor integrated circuit devices, the number of electrodes has increased significantly, and external lead terminals for connecting each electrode of the semiconductor integrated circuit device to an external electric circuit have also been connected. The width is as thin as 0.5 mm or less, and the interval between adjacent external lead terminals has become extremely narrow. For this reason, a semiconductor device using this conventional package for housing a semiconductor element has a disadvantage that when an external force is applied to an external lead terminal, for example, when the external lead terminal is connected to a wiring conductor of an external electric circuit board, the external force is applied to the external lead terminal. The terminal is easily and largely deformed, and as a result, there is a disadvantage that a short circuit occurs due to contact between adjacent external lead terminals, thereby impairing the function as a semiconductor device.

In order to solve the above-mentioned drawbacks, there has been proposed a semiconductor element housing package in which each of the external lead terminals projecting outward from the side surface of the container is attached to a connecting member made of an electrically insulating material such as ceramic or glass. ing.

According to such a package for accommodating a semiconductor element, since each of the external lead terminals is attached to the connecting member, a space between adjacent external lead terminals is maintained, and at the same time, an external force is applied to the external lead terminals. However, large deformation due to the application of the external force is effectively prevented.

However, in this semiconductor device housing package, the connecting member does not participate in the brazing of the metallized wiring layer formed on the insulating base and the external lead terminals at all, and the line width of the external lead terminals is 0.5 mm or less. The external lead terminals are detached from the metallized wiring layer when tensile stress is applied to the external lead terminals via the connecting member because the brazing strength of the external lead terminals to the metallized wiring layer is low. However, the disadvantage remains that the electrodes of the semiconductor integrated circuit device cannot be firmly electrically connected to an external electric circuit via external lead terminals.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to firmly fix one end of an external lead terminal to a container for accommodating a semiconductor element and to provide electrical insulation between adjacent external lead terminals. An object of the present invention is to provide a package for housing a semiconductor element capable of maintaining the above conditions and reliably connecting each electrode of the semiconductor integrated circuit element housed therein to a predetermined external electric circuit.

[0009]

According to the present invention, one end of an external lead terminal is fixed to a container having a space for accommodating a semiconductor element therein, and the other end of the plurality of external lead terminals is connected at a predetermined interval to the container. A semiconductor device housing package protruding outward from a side surface of the external lead terminal, wherein the other end of each of the external lead terminals is attached to an electrically insulating connecting member, and the connecting member is connected to the external lead terminal. The external lead terminals having a greater width than the adjacent external lead terminals are fixed to the container via reinforcing members disposed on both sides of the plurality of external lead terminals so as to be wider than the predetermined interval. It is a feature.

[0010]

According to the semiconductor device housing package of the present invention, since each of the external lead terminals protruding from the side surface of the container is attached to the electrically insulating connecting member, the interval between the adjacent external lead terminals is reduced. Maintained by the member, large deformation due to the application of external force is effectively prevented, and no electrical short circuit occurs between adjacent external lead terminals. As a result, each electrode of the semiconductor integrated circuit element housed inside the container is removed. The semiconductor integrated circuit element can be normally operated for a long period of time by accurately and electrically connecting to a predetermined external electric circuit via the external lead terminal.

Further, according to the package for housing a semiconductor element of the present invention, since the connecting member is fixed to the container via the reinforcing member, even if a pulling force is applied to each external lead terminal via the connecting member, the external lead terminal is not affected. The tensile force is effectively prevented from being transmitted to each external lead terminal by the reinforcing member. As a result, each electrode of the semiconductor integrated circuit element housed inside the container without the external lead terminal coming off from the container is fixed to a predetermined external position. It is possible to make a strong electrical connection to the lead terminals.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 show an embodiment of a package for housing a semiconductor element according to the present invention, wherein 1 is an insulating base made of an electrically insulating material, and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor integrated circuit element 3.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, etc., and houses the semiconductor integrated circuit element 3 in a substantially central portion of its upper surface. Recess 1a for forming a void
The semiconductor integrated circuit element 3 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive such as brazing material, glass, resin, or the like.

When the insulating substrate 1 is formed of, for example, an aluminum oxide sintered body, an appropriate organic binder, a solvent, and the like are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The slurry is formed, and the slurry is formed into a sheet by a doctor blade method, a calender roll method, or the like to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheet is subjected to an appropriate punching process. It is manufactured by laminating a plurality of these and firing at a high temperature of about 1600 ° C.

A plurality of metallized wiring layers 5 are formed from the periphery of the concave portion 1a of the insulating substrate 1 to the outer peripheral edge thereof. Each electrode of the circuit element 3 is electrically connected via a bonding wire 6, and one end of an external lead terminal 7 is soldered and attached to a portion led out to the outer peripheral edge of the insulating base 1 via a brazing material. ing.

The metallized wiring layer 5 provided on the insulating base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese, etc. The metallized wiring layer 5 is connected to an external lead terminal 7 connected to an external electric circuit by a semiconductor integrated circuit. Element 3
To electrically connect the respective electrodes.

For the metallized wiring layer 5, a metal paste obtained by adding a suitable organic solvent and a solvent to a high melting point metal powder such as tungsten is mixed by a conventionally known thick film method such as a screen printing method. The ceramic green sheet serving as the insulating base 1 is printed and applied in advance, so that the ceramic green sheet is adhered and formed from the periphery of the concave portion 1a to the outer peripheral edge of the insulating base 1.

On the exposed surface of the metallized wiring layer 5, a metal having excellent corrosion resistance, such as nickel or gold, and a good wettability with a brazing material is applied by plating to a thickness of 1 to 20 μm.
In this case, the metallized wiring layer 5 can be effectively prevented from being oxidized and corroded, and the metallized wiring layer 5 and the bonding wires 6 and the external lead terminals 7 can be effectively prevented.
Can be made firmly. Therefore, it is preferable that the metallized wiring layer 5 is coated with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material to a thickness of 1 μm to 20 μm by plating on the exposed surface. .

Further, one end of an external lead terminal 7 is attached to the metallized wiring layer 5 attached to the insulating base 1 via a brazing material such as silver brazing, and the external lead terminal 7 is a semiconductor integrated circuit. It serves to electrically connect each electrode of the element 3 to a predetermined external electric circuit.

The external lead terminal 7 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
For example, an ingot (lump) such as an iron-nickel-cobalt alloy is formed into a predetermined plate shape by employing a conventionally known metal rolling method and a punching method.

The external lead terminal 7 may be formed by plating a metal having good conductivity and excellent corrosion resistance made of nickel, gold or the like on the surface thereof to a thickness of 1 to 20 μm by plating. 7 can be effectively prevented, and the electrical connection between the external lead terminal 7 and the external electric circuit can be made good. Therefore, it is preferable that nickel, gold, or the like is layered on the surface of the external lead terminal 7 to a thickness of 1 to 20 μm by plating.

A connecting member 8 made of an electrically insulating material is attached to the other end of the external lead terminal 7 projecting outward from the side surface of the container 4. Reference numeral 7 is such that a predetermined interval is maintained between adjacent external lead terminals 7 and large deformation due to application of an external force can be effectively prevented. Therefore, when connecting the external lead terminal 7 to the wiring conductor of the external electric circuit board via solder or the like, the external lead terminal 7
Even when an external force is applied to the external lead terminals 7
Does not cause an electrical short circuit between the adjacent external lead terminals 7. As a result, each electrode of the semiconductor integrated circuit element 3 housed in the container 4 is connected to the external lead terminal 7 via the external lead terminal 7. As a result, it is possible to accurately and electrically connect to a predetermined external electric circuit, and the semiconductor integrated circuit element 3 can be normally operated for a long time.

Further, since the connecting member 8 to which the external lead terminals 7 are attached is formed of an electrically insulating material, the connecting members 8 do not cause an electrical short between the external lead terminals 7.

The connecting member 8 made of the electrically insulating material is formed of ceramics such as an aluminum oxide sintered body, glass, or a resin. A similar method, specifically, adding an appropriate organic binder, a solvent, and the like to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a muddy substance and subjecting the muddy substance to a doctor blade method or calendering A ceramic green sheet (ceramic green sheet) is obtained by forming into a sheet shape by a roll method or the like. Thereafter, the ceramic green sheet is subjected to an appropriate punching process to form a predetermined rod shape, and this is pressed at a high temperature of about 1600 ° C. It is manufactured by firing.

When the connecting member 8 is formed of a sintered body of aluminum oxide, the external lead terminals 7 are attached to the connecting member 8 in advance by the same method as the metallized wiring layer 5 described above. This is performed by depositing a plurality of metallized metal layers and brazing the external lead terminals 7 individually to each of the metallized metal layers via a brazing material.

Further, the connecting member 8 is fixed to the insulating base 1 via a reinforcing member 9. The reinforcing member 9 includes the metallized wiring layer 5 formed on the insulating base 1 and the external lead terminals 7.
This effectively prevents the pulling force from acting on the brazing portion via the connecting member 8 so that even if the pulling force acts on the external lead terminals 7 via the connecting member 8, the external lead terminals 7 are not affected. The tensile force is effectively prevented from being transmitted to each external lead terminal 7 by the reinforcing member 9, and as a result, the semiconductor integrated circuit element accommodated in the container 4 without the external lead terminal 7 being detached from the metallized wiring layer 5. 3 can be firmly electrically connected to predetermined external lead terminals 7.

The reinforcing member 9 is made of, for example, iron-nickel-
The insulating base 1 and the connecting member 8 are made of a material such as a cobalt alloy or an iron-nickel alloy, and a metallized metal layer is previously applied to the insulating base 1 and the connecting member 8 in the same manner as the above-described metallized wiring layer 5. Each of the metallized metal layers is brazed at both ends via a brazing material to be attached between the connecting member 8 and the insulating base 1, and at the same time, the connecting member 8 is fixed to the insulating base 1.

The reinforcing member 9 has a mechanical strength that does not easily cause deformation in order to effectively prevent a tensile force from acting on a brazing portion between the metallized wiring layer 5 formed on the insulating base 1 and the external lead terminal 7. When the reinforcing member 9 is made of, for example, an iron-nickel-cobalt alloy, a rod having a cross-sectional area of about 1 mm ² is used.

Thus, according to the package for accommodating a semiconductor element of the present invention, the semiconductor integrated circuit element 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 with an adhesive made of brazing material, glass, resin or the like. Each electrode of the circuit element 3 is connected to the metallized wiring layer 5 via a bonding wire 6, and thereafter, the lid 2 is joined to the upper surface of the insulating base 1 via a sealing material made of glass, resin, brazing material or the like. Then, the semiconductor integrated circuit element 3 is hermetically accommodated in a container 4 including the insulating base 1 and the lid 2, thereby obtaining a semiconductor device as a final product.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. The container 4 containing 3 is formed of the insulating base 1 made of an aluminum oxide sintered body and the lid 2,
This may be formed by processing a metal material such as copper or an iron-nickel-cobalt alloy into a predetermined shape. in this case,
In order to connect each electrode of the semiconductor integrated circuit element 3 to a predetermined external lead terminal 7 with electrical insulation, each electrode of the semiconductor integrated circuit element 3 is connected to a metal container and the external lead terminal is brazed. It is necessary to separately prepare an insulator having a metallized wiring layer and to dispose this in a metal container.

In the above-described embodiment, the connecting member 8 is formed of an aluminum oxide sintered body and the external lead terminals 7 are attached to the connecting member 8 by brazing. However, the present invention is not limited to this. Instead, the connecting member 8 may be formed of an electrically insulating material such as glass or epoxy resin, and the external lead terminals 7 may be attached to the connecting member 8 with an adhesive made of glass, resin, or the like.

Further, in the above-described embodiment, the reinforcing member 9 is formed of a metal material such as an iron-nickel-cobalt alloy, and is attached to the insulating base 1 and the connecting member 8 by brazing.
This is not limited to this, and the reinforcing member 9 may be formed of ceramics or resin having high mechanical strength.
Further, it may be attached to the insulating base 1 or the connecting member 8 using a mechanical joining method or an adhesive such as glass or resin.

[0033]

According to the semiconductor device housing package of the present invention, since each of the external lead terminals protruding from the side surface of the container is attached to the electrically insulating connecting member, the distance between the adjacent external lead terminals can be improved. Is maintained by the connecting member, and large deformation due to the application of external force is effectively prevented, so that an electric short circuit does not occur between adjacent external lead terminals. As a result, each of the semiconductor integrated circuit elements housed inside the container is The electrodes can be accurately and electrically connected to a predetermined external electric circuit via the external lead terminals, and the semiconductor integrated circuit device can operate normally for a long period of time.

Further, according to the semiconductor element housing package of the present invention, since the connecting member is fixed to the container via the reinforcing member, even if a pulling force is applied to each external lead terminal via the connecting member, the force is not affected. The tensile force is effectively prevented from being transmitted to each external lead terminal by the reinforcing member. As a result, each electrode of the semiconductor integrated circuit element housed inside the container without the external lead terminal coming off from the container is fixed to a predetermined external position. It is possible to make a strong electrical connection to the lead terminals.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one embodiment of a semiconductor element storage package according to the present invention.

FIG. 2 is a plan view of an insulating base used in the semiconductor device housing package shown in FIG. 1;

FIG. 3 is a cross-sectional view of a conventional semiconductor element storage package.

FIG. 4 is a plan view of an insulating base used in the package for housing a semiconductor element shown in FIG. 3;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Depression 2 ... Lid 3 ... Semiconductor integrated circuit element 4 ... Container 5 ... · Metallized wiring layer 7 ············································································· Reinforcement

Claims (1)

(57) [Claims] An external lead terminal is fixed to a container having a space for accommodating a semiconductor element therein.
A package for housing a semiconductor element, wherein the other ends of the plurality of external lead terminals are projected outward from a side surface of a container at predetermined intervals , wherein the other end of each of the external lead terminals is connected to an electrically insulating connecting member. causes attached, the connecting member, before the wider and adjacent than the external lead terminals
The distance between the external lead terminals is wider than the predetermined distance.
A semiconductor element storage package, which is fixed to a container via reinforcing members disposed on both sides of the plurality of external lead terminals as described above .