JP3464136B2 - Electronic component storage package - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component housing package for hermetically housing electronic components such as semiconductor elements and piezoelectric vibrators.

[0002]

2. Description of the Related Art Conventionally, an electronic component housing package for housing a semiconductor element such as a semiconductor integrated circuit element or an electronic component such as a crystal resonator or a surface acoustic wave element such as a piezoelectric resonator is, for example, aluminum oxide. (Al ₂
O ₃ ), which is made of an electrically insulating material such as a sintered body, has a concave portion for accommodating electronic components in the substantially central portion of the upper surface or the lower surface thereof and is led out from the peripheral portion of the concave portion to the lower surface, such as tungsten or molyfden An insulating substrate having a plurality of metallized wiring layers made of refractory metal powder, and an external body attached to the metallized wiring layers via a brazing material such as silver brazing for electrically connecting an electronic component to an external electric circuit. It is composed of a lead terminal and a lid.

When the electronic component is, for example, a semiconductor element, the semiconductor element is adhered and fixed to the bottom surface of the recess of the insulating substrate via an adhesive material such as glass, resin, or brazing material, and each semiconductor element is attached. The electrodes and the metallized wiring layer are electrically connected via an electric connection hand throw such as a bonding wire, and thereafter, the lid is joined to the upper surface of the insulating substrate via a sealing material made of low melting point glass, A semiconductor device as a final product is obtained by hermetically accommodating a semiconductor element inside a container composed of an insulating base and a lid.

In the case where the electronic component is, for example, a piezoelectric vibrator, one end of the piezoelectric vibrator is adhered to the step portion formed on the bottom surface of the recess of the insulating substrate with an adhesive material made of a conductive epoxy resin or the like. The electrodes of the piezoelectric vibrator are fixed and electrically connected to the metallized wiring layer, and then the lid is bonded to the upper surface of the insulating base through a sealing material made of low-melting glass to form the insulating base and the lid. An electronic component device as a final product is obtained by hermetically accommodating a semiconductor element inside a container made of.

As a sealing material for joining the lid to the insulating substrate, generally 56 to 66% by weight of lead oxide, 4 to 14% by weight of boron oxide, 1 to 6% by weight of silicon oxide, and 0.5 to bismuth oxide are used. Glass containing 5 wt% and 0.5 to 3 wt% of zinc oxide, 9 to 19 wt% of cordierite compound as a filler, and 10 to 20 wt% of tin titanate compound is used. ing.

However, in this conventional package for storing electronic parts, ceramics such as aluminum oxide (Al ₂ O ₃ ) sintered material forming the insulating substrate and lid, and glass forming the sealing material are both used. When it is mounted together with other electronic components on an external electric circuit board, etc., it has a problem of mutual interference of electromagnetic waves between adjacent electronic components, causing malfunction of the electronic components, because it does not have much ability to block electromagnetic waves. It was In particular, recently, electronic parts have been mounted on an external electric circuit board at an extremely high density, and the distance between adjacent electronic parts has become extremely small. The problem due to the mutual interference of electromagnetic waves has become extremely large. .

Therefore, in order to solve the above-mentioned drawbacks, the applicant of the present application first forms a metal layer below a mounting portion on which an electronic component is mounted, and at the same time, a part of the metal layer is led out through a through-hole conductor. The present invention proposes a package for housing an electronic component, which includes an insulating base body, a conductive lid and a conductive sealing material (see Japanese Patent Application No. 9-291299).

According to such an electronic component storing package, the conductive lid is bonded to the upper surface of the insulating base through the conductive sealing material, and the metal layer provided on the insulating base and the conductive lid are through-hole conductors. Also, by electrically connecting with a conductive sealing material and surrounding the electronic component from above and below with a metal layer and a conductive lid, it is possible to effectively prevent electromagnetic waves from acting on the electronic component housed inside from the outside. Therefore, it becomes possible to operate the electronic component normally and stably for a long period of time.

[0009]

However, in this electronic component storing package, the diameter of the through-hole conductor for leading out a part of the metal layer to the upper surface of the insulating substrate is as small as about 0.2 mm, and the conductive sealing is provided. Volume resistance of material is 1 × 1
Even if the conductive lid and the through-hole conductor provided on the insulating base are connected via a conductive sealing material because of the high value of 0 ⁴ Ω, etc., the electrical connection between them has high conduction resistance and low reliability. As a result, there is a problem to be solved in that the metal layer and the conductive lid cannot be surely electrically connected to each other to reliably and completely protect the electronic component from external electromagnetic waves.

The present invention has been devised in view of the above drawbacks, and its purpose is to reliably prevent electromagnetic waves from acting on electronic parts housed inside a container, and to keep the electronic parts normal and stable for a long period of time. An object of the present invention is to provide a package for storing electronic components that can be operated at any time.

[0011]

According to the present invention, there is provided on a top surface a mounting portion on which an electronic component is mounted, and a frame-shaped metal layer formed so as to surround the mounting portion, and below the mounting portion. A conductive lid is formed on an insulating base on which a metal layer electrically connected to the frame-shaped metal layer is arranged, and a conductive lid, and a conductive lid is provided on an upper surface of the insulating base on which the frame-shaped metal layer is formed. A body is joined via a conductive sealing material, and an electronic component is hermetically housed inside a container composed of an insulating base and a conductive lid while electrically connecting the metal layer and the conductive lid. In the package for storing electronic parts, the width of the frame-shaped metal layer is narrower than the width of the joint between the insulating base and the conductive lid,
Further, it is characterized in that it is located on the center side of the joining region.

Further, the present invention is characterized in that the width of the frame-shaped metal layer is 5 to 50% of the joint width of the insulating base and the conductive lid.

According to the package for storing electronic parts of the present invention, a frame-shaped metal is provided in which a metal layer is arranged below the mounting portion of the insulating base on which electronic parts are mounted and a part of the metal layer is formed on the upper surface of the insulating base. When the conductive lid is bonded to the upper surface of the insulating substrate via the conductive sealing material, the conductive sealing material contacts the frame-shaped metal layer in a large area and becomes conductive. The conductive lid and the metal layer are reliably and electrically connected with a low conduction resistance, and as a result, electromagnetic waves are surely prevented from acting on the electronic component, and the electronic component is kept normal for a long period of time, and It becomes possible to operate stably.

In particular, if the width of the frame-shaped metal layer is set in the range of 5 to 50% with respect to the joint width between the insulating substrate and the conductive lid, the conductive sealing material has an extremely large area with respect to the frame-shaped metal layer. The conductive lid and the metal layer are electrically connected to each other more reliably and with a lower conduction resistance.
Electromagnetic waves can be reliably prevented from acting on the electronic component, and the electronic component can be operated normally and stably for a long period of time.

Further, according to the electronic component storing package of the present invention, the width of the frame-shaped metal layer is set to, for example, 5 to 50% of the joint width of the insulating base and the conductive lid, and the joint region is formed. When the conductive lid is bonded to the upper surface of the insulating substrate on which the frame-shaped metal layer is formed through the conductive sealing material, the conductive material is formed on both sides of the frame-shaped metal layer. The encapsulating material and the upper surface of the insulating base are bonded extremely strongly, which completes the hermetic sealing of the container consisting of the insulating base and the conductive lid, and ensures that the electronic components housed inside the container are normal for a long period of time. It can also be operated stably.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION Next, the present invention will be described in detail with reference to the accompanying drawings. 1 is a sectional view showing an example of an embodiment of an electronic component storing package of the present invention, FIG. 2 is an enlarged sectional view of an essential part thereof, and FIG. 3 is an enlarged plan view of an essential part. In FIG. It is a semiconductor element, and shows an example in the case where the electronic component storage package is a semiconductor element storage package.

In the figure, 1 is an insulating substrate and 2 is a conductive lid. The insulating substrate 1 and the conductive lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating base 1 is provided with a concave mounting portion 1a in which the semiconductor element 3 is mounted and accommodated in a substantially central portion of the upper surface thereof. The mounting portion 1a includes the semiconductor element 3 made of glass, resin, or the like.
It is adhesively fixed through an adhesive material made of a brazing material or the like.

The insulating substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body,
It is made of an electrically insulating material such as a silicon carbide sintered body.
When it is made of an aluminum oxide sintered body, a suitable organic binder, a solvent, a plasticizer, a dispersant, etc. are added to and mixed with the raw material powder of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. Then, the slurry is formed into a sheet by using a sheet forming method such as a doctor blade method and a calendar roll method which are well known in the related art to obtain a ceramic green sheet (ceramic green sheet), which is then suitable for those ceramic green sheets. Punching and stacking multiple sheets at about 1600 ℃
It is manufactured by firing at high temperature.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the mounting portion 1a to the upper surface thereof, and the electrodes of the semiconductor element 3 are formed around the mounting portion 1a of the metallized wiring layer 5. Are electrically connected via a bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is attached to a portion led out to the upper surface of the insulating substrate 1 via a brazing material such as silver solder. ing.

The metallized wiring layer 5 acts as a conductive path when electrically connecting each electrode of the semiconductor element 3 to an external electric circuit, and is formed of a refractory metal powder such as tungsten, molybdenum or manganese.

The metallized wiring layer 5 is made of tungsten,
A metal paste obtained by adding and mixing a suitable organic binder, a solvent, a plasticizer, etc. to a refractory metal powder such as molybdenum or manganese is used as the insulating substrate 1 by employing a conventionally known thick film technique such as screen printing. The ceramic green sheet is printed and applied in advance, and the ceramic green sheet is fired at the same time to mount the insulating substrate 1 on the mounting portion 1a.
It is formed in a predetermined pattern from the periphery to the upper surface.

The metallized wiring layer 5 is formed by depositing a metal such as nickel or gold, which has good conductivity, corrosion resistance and wettability with the brazing material, to a thickness of 1 to 20 μm by plating. By doing so, it is possible to effectively prevent oxidative corrosion of the metallized wiring layer 5, and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing of the metallized wiring layer 5 and the external lead terminal 7 extremely strong. You can Therefore, oxidative corrosion of the metallized wiring layer 5 is prevented, the metallized wiring layer 5 and the bonding wire 6 are connected, and the metallized wiring layer 5 and the external lead terminal 7 are connected.
In order to firmly braze the metal with nickel, it is preferable to deposit nickel, gold, etc. on the surface of the metallized wiring layer 5 by a plating method to a thickness of 1 to 20 μm.

Further, the insulating base 1 has a metal layer 8 disposed below the mounting portion 1a, and a part of the metal layer 8 is formed on the upper surface of the insulating base 1 so as to surround the mounting portion 1a. 9 is electrically connected.

The metal layer 8 surrounds the semiconductor element 3 housed inside with a conductive lid 2 described later, prevents electromagnetic waves from acting on the semiconductor element 3 from the outside, and operates the semiconductor element 3 stably. Act.

The metal layer 8 is, for example, tungsten,
A metal paste made of a refractory metal powder such as molybdenum and manganese. A metal paste obtained by adding and mixing an appropriate organic binder, a solvent, a plasticizer and the like to a refractory metal powder such as tungsten, molybdenum and manganese is a conventionally known screen printing method. Insulating substrate 1 is formed by applying a thick film method such as the above to a ceramic green sheet to be insulating substrate 1 in advance by printing, and firing the ceramic green sheet simultaneously with the ceramic green sheet.
Is disposed below the mounting portion 1a of the.

On the other hand, an external lead terminal 7 is brazed to the metallized wiring layer 5 formed on the insulating substrate 1, and the external lead terminal 7 connects the semiconductor element 3 housed inside the container 4 to an external electric circuit. The semiconductor element 3 housed inside by connecting the external lead terminal 7 to an external electric circuit has a bonding wire 6,
It is electrically connected to an external electric circuit through the metallized wiring layer 5 and the external lead terminal 7.

The external lead terminal 7 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy.
It is formed into a predetermined shape by subjecting an ingot (lump) of iron-nickel-cobalt alloy or the like to a conventionally known metal working method such as a rolling working method or a punching working method.

The external lead terminal 7 is also formed by depositing a metal such as nickel or gold, which has good conductivity and corrosion resistance, on the surface by plating to a thickness of 1 to 20 μm. It is possible to effectively prevent the oxidative corrosion of 7 and to make good electrical connection between the external lead terminal 7 and the external electric circuit. Therefore, it is preferable to deposit nickel, gold or the like on the surface of the external lead terminal 7 by a plating method to a thickness of 1 to 20 μm.

Further, in the insulating substrate 1 to which the external lead terminals 7 are attached, the conductive lid body 2 is bonded via the conductive sealing material 10 to the upper surface on which the frame-shaped metal layer 9 is coated, and The metal element 8 of the insulating base 1 and the conductive lid 2 are electrically connected to each other, and the semiconductor element 3 is hermetically housed inside the container 4 including the insulating base 1 and the conductive lid 2.

The frame-shaped metal layer 9 is electrically connected to the metal layer 8 and has a function of electrically connecting the conductive lid 2 to the metal layer 8, and is mounted on the upper surface of the insulating base 1 on the mounting portion 1a. The width is formed so as to surround, for example, 5 to 50% of the joint width between the insulating base 1 and the conductive lid 2.

The frame-shaped metal layer 9 is formed so that its width is, for example, in the range of 5 to 50% of the joint width (W) between the insulating base 1 and the conductive lid 2. Since it is wide, the frame-shaped metal layer 9 and the conductive sealing material 10 are in contact with each other over an extremely large area, and the conductive lid 2 and the metal layer 8 can be reliably and electrically connected with low conduction resistance. This makes it possible to reliably prevent electromagnetic waves from acting on the semiconductor element 3 housed inside the container 4 and operate the semiconductor element 3 normally and stably for a long period of time.

The frame-shaped metal layer 9 is located on the central side of the joint region between the insulating base 1 and the conductive lid 2. Therefore, the conductive lid 2 is attached to the upper surface of the insulating base 1 by the conductive sealing material. 10
When they are joined together via, the upper surface of the insulating base 1 located on both sides of the frame-shaped metal layer 9 and the conductive encapsulant 10 are joined very strongly, and as a result, the insulating base 1 and the conductive lid are attached. The container 4 including 2 is completely hermetically sealed, and the semiconductor element 3 housed inside the container 4 can be normally and stably operated for a long period of time.

The frame-shaped metal layer 9 is made of the same material as the metal layer 8 described above, for example, tungsten, molybdenum,
It is made of a refractory metal powder such as manganese and is formed in a frame shape on the upper surface of the insulating base 1 by the same method as that for forming the metal layer 8 on the insulating base 1.

If the width of the frame-shaped metal layer 9 is less than 5% of the width (W) of the joint between the insulating substrate 1 and the conductive lid 2, the frame-shaped metal layer 9 and the conductive sealing material will be described. There is a risk that the contact area with 10 becomes narrow and the electrical connection of the conductive lid 2 to the metal layer 8 provided on the insulating substrate 1 via the conductive sealing material 10 becomes unreliable. On the other hand, if it exceeds 50%, it becomes difficult to firmly bond the conductive lid 2 to the upper surface of the insulating base 1, and the hermetic sealing of the container 4 composed of the insulating base 1 and the conductive lid 2 becomes incomplete. There is a risk. Therefore, it is preferable that the width of the frame-shaped metal layer 9 is in the range of 5 to 50% of the joint width (W) of the insulating base 1 and the conductive lid 2.

Further, the frame-shaped metal layer 9 has a conductive sealing material 1
The conductive lid body 2 is joined via 0, and the conductive lid body 2 is obtained by depositing a metal film such as copper or aluminum on the surface of an aluminum oxide sintered body, or an iron-nickel-cobalt alloy. And a metal layer 8 made of a metal material such as an iron-nickel alloy and hermetically sealing the semiconductor element 3 mounted on the mounting portion 1a of the insulating base 1 and the metal layer 8 disposed on the insulating base 1 to form the semiconductor element 3 It acts to prevent electromagnetic waves from acting on the surrounding semiconductor element 3 and to operate the semiconductor element 3 in a stable manner.

Furthermore, the conductive sealing material 10 for bonding the conductive lid 2 to the frame-shaped metal layer 9 hermetically seals the semiconductor element 3 inside the container 4 composed of the insulating base 1 and the conductive lid 2. It has a function of electrically connecting the metal layer 8 of the insulating substrate 1 and the conductive lid body 2 while sealing, and is formed of, for example, glass or an organic resin containing metal powder.

The conductive sealing material 10 is made of lead oxide 5
Lead titanate as a filler in a glass component containing 0 to 65% by weight, boron oxide 2 to 10% by weight, lead fluoride 10 to 30% by weight, zinc oxide 1 to 6% by weight, and bismuth oxide 10 to 20% by weight. When the conductive glass is formed of conductive glass containing 26 to 45% by weight of a compound and 5 to 20% by weight of copper, iron-nickel alloy, iron-nickel-cobalt alloy, the conductive glass has a softening melting temperature of 320. The temperature is as low as not more than 0 ° C., and therefore, when the insulating substrate 1 and the conductive lid 2 are bonded and the container 4 is hermetically sealed, the sealing temperature can be set to a low temperature, and as a result, the conductive sealing material 10 can be obtained. Even if the heat for melting the semiconductor element acts on the semiconductor element 3 contained therein, the characteristics of the semiconductor element 3 are not deteriorated, and the semiconductor element 3 can be operated normally and stably for a long period of time. . The softening and melting temperature of this conductive glass is 3
Since the temperature is as low as 20 ° C. or lower, when the semiconductor element 3 is adhesively fixed to the mounting portion 1a of the insulating substrate 1 via an adhesive material such as a resin, the semiconductor element 3 has the adhesive fixing characteristic of the conductive sealing material 10. The semiconductor element 3 can be extremely firmly adhered and fixed to the mounting portion 1a of the insulating substrate 1 without being significantly deteriorated by the heat of softening and melting, and the semiconductor element 3 can always be stably operated. it can.

The conductive sealing material 10 is made of lead oxide 50.
To 65% by weight, boron oxide 2 to 10% by weight, lead fluoride 10 to 30% by weight, zinc oxide 1 to 6% by weight, bismuth oxide 10 to 20% by weight, and a lead titanate-based filler as a filler. When the compound is made of conductive glass containing 26 to 45% by weight of copper, 5 to 20% by weight of copper, iron-nickel alloy and iron-nickel-cobalt alloy, the glass containing less than 50% by weight of lead oxide is used. The softening and melting temperature of the container becomes high, and the heat of hermetically sealing the container 4 causes deterioration of the characteristics of the semiconductor element 3. If it exceeds 65% by weight, the chemical resistance of the glass decreases, and The reliability of the hermetic sealing of No. 4 will be greatly reduced. Therefore, the amount of lead oxide is preferably set in the range of 50 to 65% by weight.

If the amount of boron oxide is less than 2% by weight, the crystallization of the glass will proceed and the fluidity will be lowered, making it difficult to hermetically seal the container 4, and if it exceeds 10% by weight, the glass will be impaired. As a result, the softening and melting temperature of the semiconductor element becomes high, and the heat of sealing the container 4 hermetically deteriorates the characteristics of the semiconductor element 3. Therefore, the amount of boron oxide is 2 to 10
It is preferable to set it in the range of% by weight.

If the amount of lead fluoride is less than 10% by weight, the softening and melting temperature of the glass becomes high, and the heat of sealing the container 4 hermetically deteriorates the characteristics of the semiconductor element 3. Further, if 30% by weight is suitable, the chemical resistance of the glass is lowered, and the reliability of hermetic sealing of the container 4 is greatly lowered. Therefore, the amount of lead fluoride is preferably set in the range of 10 to 30% by weight.

If the amount of zinc oxide is less than 1% by weight, the chemical resistance of the glass is lowered, and the reliability of hermetic sealing of the container 4 is greatly lowered. Crystallization proceeds and the fluidity is greatly reduced, making it difficult to hermetically seal the container 4. Therefore, the amount of zinc oxide is preferably set in the range of 1 to 6% by weight.

When the amount of bismuth oxide is less than 10% by weight, the softening and melting temperature of the glass becomes high and the heat of the hermetically sealing the container 4 causes the characteristics of the semiconductor element 3 to deteriorate. On the other hand, if it exceeds 20% by weight, the crystallization of the glass will proceed and the fluidity will be greatly reduced, making it difficult to hermetically seal the container 4. Therefore, it is preferable that the amount of bismuth oxide is in the range of 10 to 20% by weight.

The lead titanate compound added as a filler to the conductive sealing material 10 adjusts the coefficient of thermal expansion of the conductive sealing material 10 so that the insulating substrate 1 and the conductive lid 2 are made conductive. If the amount of the sealing material 10 is less than 26% by weight, the coefficient of thermal expansion of the conductive sealing material 10 will be an insulating substrate. 1 and the conductive lid 2 are greatly different from each other in thermal expansion coefficient, the conductive sealing material 10 cannot be firmly bonded to the insulating substrate 1 and the conductive lid 2, and when it exceeds 45% by weight. The fluidity of the conductive encapsulant 10 decreases, making it difficult to hermetically seal the container 4. Therefore, the amount of the lead titanate-based compound is preferably set in the range of 26 to 45% by weight.

Copper, iron-nickel alloy, and iron-nickel-cobalt alloy added as fillers to the conductive sealing material 10 are conductivity-imparting materials for the conductive sealing material 10.
If the amount is less than 5% by weight, the conductivity of the conductive encapsulant 10 is lowered, and the conductive lid 2 is surely attached to the frame-shaped metal layer 9 connected to the metal layer 8 of the insulating base 1. It becomes impossible to make electrical connection, and if it exceeds 20% by weight, the fluidity of the conductive sealing material 10 is lowered, and it becomes difficult to hermetically seal the container 4. Therefore, the amount of copper is 5 to 20
It is preferable to set it in the range of% by weight.

Thus, according to the above-mentioned package for accommodating semiconductor elements, the semiconductor element 3 is adhered and fixed to the mounting portion 1a of the insulating substrate 1 via the adhesive material made of glass, resin, brazing material or the like, and The electrodes are electrically connected to the metallized wiring layer 5 via the bonding wires 6,
After that, the conductive lid 2 is bonded to the frame-shaped metal layer 9 on the upper surface of the insulating base 1 via the conductive sealing material 10 so as to cover the mounting portion 1a, and the metal layer 8 of the insulating base 1 and the conductive layer 2 are made conductive. The semiconductor device as a final product is completed by hermetically housing the semiconductor element 3 inside the container 4 composed of the insulating base 1 and the conductive lid 2 while electrically connecting the lid 2.

The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described example, a semiconductor is used as an electronic component. Although the electronic component storage package for accommodating the element has been illustrated, the electronic component is a piezoelectric magnetic vibrator, a surface acoustic wave element, or the like, and can be applied to an electronic component storage package for accommodating this.

Further, in the above-mentioned example, the package for storing electronic parts in which the external lead terminals 7 are brazed to the metallized wiring layer 5 is illustrated, but the invention is not necessarily limited to this, and the metallized wiring layer is provided on the lower surface of the insulating substrate. It may be a terminal which is led out and connected directly to an external electric circuit.

[0049]

According to the electronic component storage package of the present invention, a frame is provided in which a metal layer is arranged below the mounting portion of the insulating base on which electronic components are mounted, and a part of the metal layer is formed on the upper surface of the insulating base. When the conductive lid is joined to the upper surface of the insulating substrate via the conductive sealing material, the conductive sealing material contacts the frame-shaped metal layer in a large area because it is electrically connected to the metal layer. As a result, the conductive lid and the metal layer are reliably and electrically connected with a low conduction resistance, and as a result, electromagnetic waves are surely prevented from acting on the electronic components and the electronic components are kept in a normal operating condition for a long time. And, it becomes possible to operate stably.

In particular, if the width of the frame-shaped metal layer is set in the range of 5 to 50% with respect to the joint width between the insulating substrate and the conductive lid, the conductive sealing material has an extremely large area with respect to the frame-shaped metal layer. The conductive lid and the metal layer are electrically connected to each other more reliably and with a lower conduction resistance.
Electromagnetic waves can be reliably prevented from acting on the electronic component, and the electronic component can be operated normally and stably for a long period of time.

Further, according to the package for housing electronic parts of the present invention, the width of the frame-shaped metal layer is set to, for example, 5 to 50% of the joint width of the insulating base and the conductive lid, and the joint region is formed. When the conductive lid is bonded to the upper surface of the insulating substrate on which the frame-shaped metal layer is formed through the conductive sealing material, the conductive material is formed on both sides of the frame-shaped metal layer. The encapsulating material and the upper surface of the insulating base are bonded extremely strongly, which completes the hermetic sealing of the container consisting of the insulating base and the conductive lid, and ensures that the electronic components housed inside the container are normal for a long period of time. It can also be operated stably.

[Brief description of drawings]

FIG. 1 is a sectional view showing an example of an embodiment of a package for housing an electronic component of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the electronic component storage package shown in FIG.

FIG. 3 is an enlarged plan view around the mounting portion of the insulating base of the electronic component storage package shown in FIG.

[Explanation of symbols]

1 ... Insulating substrate 2 .... Conductive lid 3 ... Semiconductor element (electronic component) 4 ... Container 8 ... Metal layer 9 .... Frame-shaped metal layer 10 ... Conductive sealing material

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-4-216652 (JP, A) JP-A-6-53355 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 23/00 H01L 23/02 H01L 23/10 H05K 9/00

Claims (2)

(57) [Claims] 1. A mounting part on which an electronic component is mounted, and a frame-shaped metal layer formed so as to surround the mounting part on an upper surface,
Further, the frame-shaped metal layer is formed by an insulating base in which a metal layer electrically connected to the frame-shaped metal layer is disposed below the mounting portion and a conductive lid. A conductive lid is bonded to the upper surface of the insulating base via a conductive sealing material, and the metal layer and the conductive lid are electrically connected to each other, and an electron is provided inside the container including the insulating base and the conductive lid. A package for storing electronic components, which is configured to hermetically accommodate components, wherein the width of the frame-shaped metal layer is narrower than the width of the joint portion between the insulating base and the conductive lid, and the central portion side of the joint region. A package for storing electronic components, characterized in that it is located at. 2. The package for storing electronic parts according to claim 1, wherein the width of the frame-shaped metal layer is 5 to 50% of the joint width of the insulating base and the conductive lid.