JP3359536B2 - Electronic component storage container - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage container for hermetically sealing and storing electronic components such as a semiconductor element and a piezoelectric vibrator. The present invention relates to a container for storing electronic components.

[0002]

2. Description of the Related Art Conventionally, an electronic component storage container for storing electronic components such as a semiconductor device such as a semiconductor integrated circuit device or a piezoelectric vibrator such as a crystal vibrator or a surface acoustic wave device has been made of, for example, aluminum oxide al ₂ O ₃₎ made of electrically insulating material quality sintered body or the like, derived over the lower surface of the recess and the recess periphery for accommodating an electronic component on a substantially central portion of the upper surface or the lower surface, for example, tungsten or molybdenum An insulating base having a plurality of metallized wiring layers made of a high melting point metal powder and external connection terminals for electrically connecting electronic components to an external electric circuit, for example, a metallized wiring layer with a brazing material such as silver brazing. The external lead terminals or external electrode pads, etc. attached by the same method as the insulating base are made of an electrically insulating material such as aluminum oxide sintered body or glass. It is composed of a lid that.

When the electronic component is, for example, a semiconductor element, the semiconductor element is placed on the bottom surface of the concave portion of the insulating base by glass.
The electrodes of the semiconductor element and the metallized wiring layer are electrically connected via electrical connection means such as bonding wires, and then the insulating base is fixed. A lid is bonded to the upper surface via a sealing material made of low-melting glass, and the semiconductor element is hermetically housed in a container formed of the insulating base and the lid, thereby obtaining a semiconductor device as a final product.

In the case where the electronic component is, for example, a piezoelectric vibrator, one end of the piezoelectric vibrator is bonded to a pair of steps formed on the bottom surface of the concave portion of the insulating base in a vacuum by using a polyimide conductive resin or the like. At the same time, the electrodes of the piezoelectric vibrator are electrically connected to the metallized wiring layer, and then a lid is placed on the upper surface of the insulating substrate with a low melting point brazing material such as solder, an organic resin, or a low melting point glass. And a piezoelectric vibrator is hermetically accommodated in a container formed of an insulating base and a lid, thereby providing an electronic component device as a final product.

[0005] As a sealing material made of low-melting glass for joining a lid to an insulating substrate, for example, lead oxide 56 is generally used.
66% by weight, boron oxide 4-14% by weight, silicon oxide 1-6
Weight% bismuth oxide 0.5 to 5 weight% zinc oxide 0.5 to
9 to 19% by weight of a cordierant-based compound as a filler and a tin titanate-based compound in a glass component containing 3% by weight
Glass added with 10-20% by weight is used.

[0006]

However, in a conventional container for storing electronic components, when the electronic component is, for example, a piezoelectric vibrator, when the organic resin is used as a sealing material, the organic resin becomes less resistant to moisture. Because of the inferiority, the moisture contained in the air enters the inside of the container consisting of the insulating base and the lid through the sealing material, and as a result, moisture adheres to the surface of the piezoelectric vibrator accommodated inside the container, and There is a drawback in that the electrodes are oxidized and corroded, causing variations in the vibration frequency of the piezoelectric vibrator.

When a low-melting-point brazing material such as solder is used as a sealing material, the low-melting-point brazing material usually contains a flux. When the piezoelectric vibrator is housed in an airtight manner, part of the flux contained in the sealing material enters the container and adheres to the surface of the piezoelectric vibrator housed inside, causing corrosion of the electrodes on the surface, This has the disadvantage of causing variations in the vibration frequency of the child.

Further, when a conventional low melting point glass is used as a sealing material when the electronic component is a piezoelectric vibrator, the sealing temperature at that time is about 400 ° C., which is lower than that of an organic resin and a low melting point brazing material. As a result, the conductive resin to which the piezoelectric vibrator is adhered and fixed is deteriorated, and the vibration frequency of the piezoelectric vibrator is varied, which has a disadvantage. Also, due to the heat resistance of the conductive resin, when an epoxy resin having low heat resistance is used, there is a restriction that the lid body cannot be sealed with glass, and the impact resistance to fixing the piezoelectric vibrator is improved. It also has the disadvantage that it is difficult to do so.

When the lid is bonded at a low sealing temperature of 300 ° C. or less using a conventional low-melting glass as a sealing material for the purpose of reducing the adverse effect of the sealing temperature, the electron after sealing is removed. The low melting glass of the sealing material is re-melted by the heat of mounting the component storage container to the wiring conductor of the external electric circuit board via solder or other brazing material, flows into the container, and contacts the piezoelectric vibrator As a result, there has been a problem that the frequency characteristics of the piezoelectric vibrator cause problems such as frequency fluctuation after sealing (fluctuation from a target frequency).

In addition, not only when the above electronic components are piezoelectric vibrators but also in conventional electronic component storage containers, the softening and melting of the low melting glass, which is a sealing material for joining the lid to the insulating base, is used. Since the temperature is about 400 ° C and the heat resistance of electronic components has recently been reduced due to higher density and higher integration, the insulating base and the lid are joined via a sealing material. However, when the electronic component is hermetically accommodated in an insulating container including an insulating base and a lid, heat for melting the sealing material acts on the electronic component accommodated therein, thereby deteriorating the characteristics of the electronic component. As a result, there is a problem that the electronic components cannot be operated normally.

[0011] Further, from the heat resistance of the adhesive when the electronic component is bonded and fixed to the bottom surface or the step portion of the concave portion of the insulating base,
There is also a problem that the conductive resin adhesively fixing the electronic component is deteriorated by heat that melts the sealing material, and the electronic component cannot be operated stably. Low temperature is required.

Therefore, recently, a sealing material having a softening / melting temperature of 300 ° C. or less is required as a sealing material for joining an insulating base and a lid of an electronic component housing container to hermetically seal the inside of the insulating container. It has become.

The present invention has been devised in view of the above problems, and has as its object to hermetically seal electronic components in an insulating container comprising an insulating base and a lid without deteriorating its characteristics. Enhance the airtightness of the electronic components, and secure and firmly secure the electronic components housed inside the container. An object of the present invention is to provide an electronic component storage container that can be normally operated for a long period of time.

[0014]

According to a first aspect of the present invention, there is provided a container for storing electronic parts, wherein an insulating base and a lid are joined via a sealing material.
An electronic component storage container for hermetically storing electronic components in a container including an insulating base and a lid, wherein the sealing material is 30 to 50% by weight of lead oxide, 1 to 6% by weight of boron oxide, and zinc oxide. The glass is composed of glass containing 7 to 15% by weight, 21 to 30% by weight of lead fluoride, and 14 to 20% by weight of bismuth oxide, and 5 to 24% by weight of a lead titanate compound as a filler. It is assumed that.

According to the electronic component storage container of the present invention, the sealing material for joining the insulating base and the lid is made of lead oxide 30 to 30.
Glass titanate containing 50% by weight, 1 to 6% by weight of boron oxide, 7 to 15% by weight of zinc oxide, 21 to 30% by weight of lead fluoride, 14 to 20% by weight of bismuth oxide, and a lead titanate compound as a filler From 5 to 24% by weight was used,
The softening and melting temperature of the sealing material is as low as 280 ° C or less (200 ° C or more). Even at such a low temperature, the material is crystallized by the heat generated during sealing. When the electronic components are hermetically housed inside an insulating container consisting of an insulating base and a lid, the characteristics of the electronic components deteriorate even if the heat that melts the sealing material acts on the electronic components housed inside. Therefore, the electronic component can be normally operated for a long period of time.

According to the electronic component storage container of the present invention, since the above-mentioned glass having a softening / melting temperature of 280 ° C. or less is used as the sealing material, the insulating base and the lid are connected via the sealing material. When the electronic components are hermetically housed inside an insulating container consisting of an insulating base and a lid by joining together, it is possible to prevent the adhesive for bonding and fixing the electronic components from being deteriorated by the heat of melting the sealing material. For example, it is possible to use an epoxy resin adhesive having a lower heat resistance than the adhesive of the present invention, so that it is possible to improve the impact resistance to the adhesive fixing of the electronic component, and to improve the reliability of the adhesive fixing of the electronic component. As a result, it is possible to operate normally and stably for a long period of time.

Further, according to the electronic component storage container of the present invention, since the above-mentioned glass having a softening / melting temperature of 280 ° C. or less is used as the sealing material, the sealing material has a high moisture resistance and the organic resin can be used. The moisture contained in the air does not enter the inside of the container consisting of the insulating base and the lid through the sealing material as in the case of using the soldering material, and the flux inside the container as in the case of using the low melting point brazing material. You don't get into it.

Further, according to the electronic component storage container of the present invention, since the sealing material is crystallized even at a low temperature of 280 ° C. or lower, the sealed electronic component storage container can be connected to the wiring conductor of the external electric circuit board. The low-melting-point glass of the sealing material is re-melted by the heat generated when soldering is performed via a brazing material such as solder, and does not flow into the container and come into contact with the electronic component.

[0019]

Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an example of an embodiment of an electronic component storage container according to the present invention, in which the electronic component is a semiconductor integrated circuit element and the electronic component storage container is a semiconductor element storage package. An example of the case is shown.

In FIG. 1, 1 is an insulating base and 2 is a lid. The insulating substrate 1 and the lid 2 make the semiconductor integrated circuit device 3
Is formed.

The insulating substrate 1 is provided with a recess 1a for forming a cavity for accommodating the semiconductor integrated circuit element 3 at a substantially central portion of the upper surface or the lower surface thereof. Are bonded and fixed via an adhesive made of glass, resin, brazing material or the like.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. If this is the case, a suitable organic binder, solvent, plasticizer, dispersant, etc. is added to the raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc., and mixed to form a slurry. The sheet is formed into a sheet by using a well-known sheet forming method such as a doctor blade method or a calender roll method to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheet is subjected to an appropriate punching process. It is manufactured by laminating a plurality of these and firing at a high temperature of about 1600 ° C.

A plurality of metallized wiring layers 5 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the upper surface. Each electrode of the semiconductor integrated circuit element 3 is formed around the concave portion 1a of the metallized wiring layer 5. An external lead terminal 7 electrically connected via a bonding wire 6 and connected to an external electric circuit is attached to a portion led out to the upper surface of the insulating base 1 via a brazing material such as silver brazing. I have.

The metallized wiring layer 5 functions as a conductive path when each electrode of the semiconductor integrated circuit element 3 is electrically connected to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum and manganese. .

The metallized wiring layer 5 is a thick film formed by adding a suitable organic solvent, solvent, plasticizer, etc. to a high melting point metal powder such as tungsten, molybdenum, manganese or the like and mixing the resulting metal paste with a conventionally well-known screen printing method. The ceramic green sheet serving as the insulating substrate 1 is preliminarily printed and applied by employing a technique, and is fired at the same time as the ceramic green sheet, so that a predetermined pattern is formed from the periphery of the concave portion 1a of the insulating substrate 1 to the upper surface. .

The metallized wiring layer 5 is formed by depositing a metal having good conductivity, such as nickel or gold, having good corrosion resistance and good wettability with a brazing material to a thickness of 1 to 20 μm on its surface by plating. In other words, it is possible to effectively prevent oxidation corrosion of the metallized wiring layer 5 and to make the connection between the metallized wiring layer 5 and the bonding wire 6 and the brazing between the metallized wiring layer 5 and the external lead terminals 7 extremely strong. Can be. Accordingly, in order to prevent the metallized wiring layer 5 from being oxidized and corroded, and to firmly connect the metallized wiring layer 5 to the bonding wires 6 and braze the metallized wiring layer 5 to the external lead terminals 7, Nickel, gold, etc. on the surface by plating method 1-20μm
It is preferable that the layer is layered to a thickness of.

On the other hand, the external lead terminals 7 brazed to the metallized wiring layer 5 serve to connect the semiconductor integrated circuit element 3 housed inside the insulating container 4 to an external electric circuit. The semiconductor integrated circuit element 3 accommodated therein by being connected to the external electric circuit is electrically connected to the external electric circuit via the bonding wire 6, the metallized wiring layer 5, and the external lead terminal 7.

The external lead terminal 7 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
It is formed into a predetermined shape by subjecting an ingot (a lump) such as a nickel-cobalt alloy to a conventionally known metal working method such as a rolling method or a punching method.

When the external lead terminal 7 is coated with a metal having good conductivity and excellent corrosion resistance made of nickel, gold or the like on its surface by plating to a thickness of 1 to 20 μm,
Oxidative corrosion of the external lead terminal 7 can be effectively prevented, and good electrical connection between the external lead terminal 7 and an external electric circuit can be achieved. For this reason, it is preferable that the external lead terminal 7 is coated with nickel, gold, or the like on its surface to a thickness of 1 to 20 μm by plating.

Further, the insulating base 1 to which the external lead terminals 7 are attached is joined to the upper or lower surface of the insulating base 1 via a sealing material 8, thereby forming an insulating container comprising the insulating base 1 and the lid 2. The semiconductor integrated circuit element 3 is hermetically accommodated in the inside 4.

The sealing material 8 contains 30 to 50% by weight of lead oxide, 1 to 6% by weight of boron oxide, 7 to 15% by weight of zinc oxide, 21 to 30% by weight of lead fluoride, and 14 to 20% by weight of bismuth oxide. In the glass component,
The sealing material 8 made of glass to which a lead titanate-based compound as a filler is added in an amount of 5 to 24% by weight has a softening / melting temperature of 28%.
It is as low as 0 ° C or lower (but 200 ° C or higher) and crystallizes at such a low temperature. Therefore, the sealing material 8 is heated and melted, and the insulating container 4 including the insulating base 1 and the lid 2 is melted.
When the semiconductor integrated circuit element 3 is hermetically housed inside the semiconductor integrated circuit element 3 even if heat for melting the sealing material 8 acts on the semiconductor integrated circuit element 3 housed inside the insulating container 4.
Therefore, the semiconductor integrated circuit element 3 can be normally operated for a long period of time without causing the deterioration of the characteristics and without melting due to the heat history after sealing.

If lead oxide (PbO) constituting the sealing material 8 is less than 30% by weight, the softening and melting temperature of the glass increases, and the insulating container 4 is hermetically sealed via the sealing material 8. In this case, the heat of softening and melting the sealing material 8 tends to cause deterioration of the characteristics of the semiconductor integrated circuit element 3, and if it exceeds 50% by weight, the chemical resistance of the sealing material 8 decreases, The reliability of hermetic sealing of the insulating container 4 tends to be greatly reduced. Therefore, the amount of lead oxide (PbO) is 30-50.
It is specified in the range of weight%.

If the amount of boron oxide (B ₂ O ₃ ) is less than 1% by weight, the crystallization of the glass proceeds and the fluidity decreases, and the insulating container 4 is hermetically sealed via the sealing material 8. When the amount exceeds 6% by weight, the softening and melting temperature of the sealing material 8 increases, and when the insulating container 4 is hermetically sealed via the sealing material 8, the sealing material 8 Tend to cause the characteristics of the semiconductor integrated circuit element 3 to be degraded by the heat of softening and melting. Thus, boron oxide (B ₂ O ₃₎ is that amount is specified in the range of 1-6 wt%.

If the amount of zinc oxide (ZnO) is less than 7% by weight, the crystallization of the glass of the sealing material 8 does not sufficiently proceed due to the heat history at the time of sealing, and the electronic component storage after sealing. When the container is mounted on the wiring conductor of the external electric circuit board via a brazing material such as solder, the sealing material 8 tends to be re-melted by heat,
If the content exceeds 15% by weight, the crystallization of the sealing material 8 proceeds too much, and the fluidity is reduced, so that the sealing of the insulating container 4 tends to be difficult. Therefore, the amount of zinc oxide (ZnO) is specified in the range of 7 to 15% by weight.

When the amount of lead fluoride (PbF ₂ ) is less than 21% by weight, the softening and melting temperature of the glass increases when zinc oxide is present in an amount of 7% by weight or more as a glass component. When the insulating container 4 is hermetically sealed through the intermediary, there is a tendency that it is difficult to perform a desired low-temperature sealing, and if it exceeds 30% by weight, the sealing is performed when zinc oxide is present as 7% by weight or more as a glass component. The chemical resistance of the stopper 8 tends to decrease, and the reliability of hermetic sealing of the insulating container 4 tends to greatly decrease.
Therefore, lead fluoride (PbF ₂₎ is that amount is specified in the range of 21 to 30 wt%.

If the amount of bismuth oxide (Bi ₂ O ₃ ) is less than 14% by weight, zinc oxide becomes 7% as a glass component.
In the case where the content is not less than 10% by weight, the softening and melting temperature of the glass increases, and when the insulating container 4 is hermetically sealed via the sealing material 8,
It tends to be difficult to perform the desired low-temperature sealing,
If it exceeds 20% by weight, zinc oxide becomes 7 as a glass component.
In the case where the content is not less than% by weight, the crystallization of the sealing material 8 is excessively advanced, and the fluidity is reduced, so that the sealing of the insulating container 4 tends to be difficult. Thus, bismuth oxide (Bi ₂ O ₃₎ is that amount is specified in the range of 14 to 20 wt%.

If the amount of the lead titanate compound added as a filler is less than 5% by weight, the glass strength of the sealing material 8 after crystallization is reduced, and the reliability of hermetic sealing of the insulating container 4 is reduced. When the content exceeds 24% by weight, when the zinc oxide is present in an amount of 7% by weight or more as a glass component, the fluidity of the sealing material 8 decreases, and it becomes difficult to seal the insulating container 4. Tend. Therefore, the amount of the lead titanate-based compound added as a filler is specified in the range of 5 to 24% by weight.

Thus, according to the electronic component storage container of the present invention, the semiconductor integrated circuit element 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 with an adhesive made of glass, resin, brazing material or the like. Each electrode of the integrated circuit element 3 is electrically connected to the metallized wiring layer 5 via the bonding wire 6, and thereafter, the recess 1 a is formed on the upper surface of the insulating base 1.
Of the semiconductor integrated circuit element 3 in an insulating container 4 composed of the insulating base 1 and the lid 2 in a hermetically sealed manner as a final product. Is completed.

FIG. 2 is a sectional view showing another embodiment of the electronic component storage container according to the present invention. In FIG. 2, the electronic component is a piezoelectric vibrator such as a quartz vibrator, and An example is shown in which the component storage container is a piezoelectric vibrator storage container.

In FIG. 2, 11 is an insulating base, and 12 is a lid. The insulating base 11 and the lid 12 constitute an insulating container 14 for housing the piezoelectric vibrator 13.

The insulating base 11 is provided with a recess 11a having a step for forming a space for accommodating the piezoelectric vibrator 13 on the upper surface thereof, and the piezoelectric vibrator 13 is made of resin or the like at the step of the recess 11a. Is fixed by means of an adhesive 15 made of.

The adhesive 15 is made of, for example, an epoxy resin-based conductive resin.
The piezoelectric vibrator 13 is placed via 15 and then the adhesive
The piezoelectric vibrator 13 is adhered and fixed to the insulating base 11 by subjecting 15 to a thermosetting treatment and thermosetting. According to the electronic component storage container of the present invention, the sealing temperature of the insulating container 14 is 280 ° C.
Since it is as low as the following, it is possible to use an epoxy resin-based conductive resin having excellent impact resistance but low heat resistance as the adhesive 15, thereby increasing the impact resistance of the piezoelectric vibrator 13 and improving the reliability of fixing. Thus, the piezoelectric vibrator 13 can be normally and stably made differential for a long period of time.

It should be noted that the insulating base 11 is made of the same material as the above-mentioned insulating base 1 in the same manner.

A metallized wiring layer 16 extending from the step of the concave portion 11a to the bottom surface is formed in the insulating base 11, and a portion of the metallized wiring layer 16 located at the step of the concave portion 11a is provided with a piezoelectric vibrator 13. Are electrically connected to each other through an adhesive 15 made of an epoxy-based conductive resin, and a wiring conductor of an external electric circuit is connected to a portion led out to the bottom surface of the insulating base 11 through a brazing material such as solder. Be attached.

Note that the metallized wiring layer 16 is also formed of the same material as the metallized wiring layer 5 described above. A metal having good conductivity, such as nickel and gold, and having good corrosion resistance and good wettability with the brazing material is deposited on the exposed outer surface of the metallized wiring layer 16 to a thickness of 1 to 20 μm by plating. By doing so, oxidation corrosion of the metallized wiring layer 16 can be effectively prevented, and
Is brazed to a wiring conductor of an external electric circuit via a brazing material such as solder, so that the brazing strength can be made extremely strong. Therefore, it is preferable that nickel, gold, or the like is applied to the exposed outer surface of the metallized wiring layer 16 by plating to a thickness of 1 to 20 μm.

Then, a lid 12 made of an electrically insulating material or the like is joined to the upper surface of the insulating base 11 to which the piezoelectric vibrator 13 is adhered and fixed via a sealing member 17, whereby the insulating base 11 and the lid
The piezoelectric vibrator 13 is hermetically housed inside an insulating container 14 composed of

The sealing material 17 is made of 30 to 50% by weight of lead oxide, 1 to 6% by weight of boron oxide,
~ 15 wt%, lead fluoride 21 ~ 30 wt%, bismuth oxide 14 ~ 20
The sealing material 17 made of lead oxide, boron oxide, zinc oxide or the like is formed of glass in which 5 to 24% by weight of a lead titanate-based compound as a filler is added to a glass component containing 5% by weight. The melting temperature is as low as 280 ° C. or less, so that the sealing material 17 is heated and melted, and when the piezoelectric vibrator 13 is hermetically accommodated inside the insulating container 14 including the insulating base 11 and the lid 12, the sealing material 17 is melted. Even if the heat for melting the piezoelectric vibrator 13 acts on the piezoelectric vibrator 13 accommodated inside the insulating container 14, the characteristics of the piezoelectric vibrator 13 are not degraded. It can be activated.

The sealing material 17 is made of glass and has excellent moisture resistance.
Sealing material when trying to get inside insulating container 14 through 17
As a result, moisture is prevented from adhering to the piezoelectric vibrator 13 housed inside the insulating container 14 and the electrodes on the surface of the piezoelectric vibrator 13 are effectively prevented from being oxidized and corroded, thereby preventing the piezoelectric vibrator 13 It is possible to stably vibrate at a predetermined vibration frequency for a long period of time.

Further, since the sealing material 17 is crystallized even at a low temperature of 280 ° C. or less, the sealed electronic component storage container is connected to the wiring conductor of the external electric circuit board by a brazing material such as solder. The low-melting-point glass of the sealing material is re-melted by the heat of mounting, and flows inside the container without contacting the piezoelectric vibrator 13. There is no occurrence of a failure in frequency characteristics due to contact with the child 13.

Thus, according to the electronic component storage container of the present invention, the insulating substrate 11 can be formed in a vacuum or in a neutral atmosphere.
One end of the piezoelectric vibrator 13 is bonded and fixed to the stepped portion of the concave portion 11a via an adhesive 15 made of an epoxy conductive resin or the like, and each electrode of the piezoelectric vibrator 13 is electrically connected to the metallized wiring layer 16. Thereafter, the concave portion 11a is formed on the upper surface of the insulating base 11.
The lid 12 is joined via a sealing material 17 so as to cover the piezoelectric vibrator 13, and the piezoelectric vibrator 13 is hermetically sealed inside an insulating container 14 composed of the insulating base 11 and the lid 12, thereby obtaining a final product. The piezoelectric vibrator device is completed.

It should be noted that the present invention is not limited to the above-described embodiment, and that various changes and improvements can be made without departing from the scope of the present invention. For example, in the above-described example, a quartz oscillator is illustrated as the piezoelectric oscillator 13, but it is needless to say that the present invention can be applied to a container for accommodating a piezoelectric vibrator or a surface acoustic wave oscillator.

[0052]

According to the electronic component storage container of the present invention,
As a sealing material for joining the insulating base and the lid, lead oxide 30
~ 50% by weight, boron oxide 1 ~ 6% by weight, zinc oxide 7 ~ 15% by weight, lead fluoride 21 ~ 30% by weight, bismuth oxide 14 ~ 20% by weight
The glass component containing 5 to 24% by weight of a lead titanate-based compound as a filler was used, so that the softening and melting temperature of the sealing material was as low as 280 ° C or lower, and the sealing was performed even at such a low temperature. When the electronic component is air-tightly housed inside the insulating container by joining the insulating base and the lid via the sealing material, the heat for melting the sealing material is Even when acting on the housed electronic components, the characteristics of the electronic components are not degraded, and as a result, the electronic components can be normally operated for a long period of time.

Further, according to the electronic component storage container of the present invention, since the above-mentioned glass having a softening and melting temperature of 280 ° C. or less is used as the sealing material, the insulating base and the lid are interposed via the sealing material. When the electronic components are airtightly housed inside the insulating container by joining together, the heat of melting the sealing material can be prevented from deteriorating the adhesive that adheres and fixes the electronic components, and has lower heat resistance than conventional adhesives For example, it is possible to use an epoxy resin-based adhesive, which can improve the impact resistance of electronic components for bonding and fixing, and can operate normally and stably for a long period of time with high reliability of bonding and fixing of electronic components. It became possible to make it.

Further, according to the electronic component storage container of the present invention, since the above-mentioned glass having a softening / melting temperature of 280 ° C. or less is used as the sealing material, the sealing material has high moisture resistance and can be used in the atmosphere. The moisture contained does not enter the inside of the container formed of the insulating base and the lid through the sealing material, and the flux does not enter the inside of the container.

Further, according to the electronic component storage container of the present invention, since the sealing material is crystallized even at a low temperature of 280 ° C. or less, the sealed electronic component storage container can be connected to the wiring conductor of the external electric circuit board. The low-melting-point glass of the sealing material is re-melted by the heat generated when soldering is performed via a brazing material such as solder, and does not flow into the container and come into contact with the electronic component.

As described above, according to the electronic component storage container of the present invention, the airtightness is improved by further increasing the airtightness of the electronic component without deteriorating its characteristics inside the insulating container including the insulating base and the lid. The electronic components are securely and firmly fixed, and the electrodes on the surface of the electronic components are effectively prevented from being oxidized and corroded. An electronic component storage container which can be provided can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of an electronic component storage container according to the present invention.

FIG. 2 is a sectional view showing another example of the embodiment of the electronic component storage container of the present invention.

[Explanation of symbols]

 1, 11 ... Insulating base 2, 12 ... Lid 3 ... Electronic components (semiconductor integrated circuit elements) ) 4, 14 ... Insulating container 8, 17 ... Sealing material

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 23/00-23/10 C03C 8/10

Claims (1)

(57) [Claims] 1. An electronic component storage container in which an insulating base and a lid are joined via a sealing material, and an electronic component is hermetically stored inside a container formed of the insulating base and the lid. The stopper is 30 to 50% by weight of lead oxide, 1 to 6% by weight of boron oxide,
The glass component contains 7 to 15% by weight of zinc oxide, 21 to 30% by weight of lead fluoride, and 14 to 20% by weight of bismuth oxide, and is made of glass in which 5 to 24% by weight of a lead titanate compound as a filler is added. A container for storing electronic components.