JP3318452B2 - Electronic component storage package - Google Patents

Electronic component storage package

Info

Publication number
JP3318452B2
JP3318452B2 JP30582394A JP30582394A JP3318452B2 JP 3318452 B2 JP3318452 B2 JP 3318452B2 JP 30582394 A JP30582394 A JP 30582394A JP 30582394 A JP30582394 A JP 30582394A JP 3318452 B2 JP3318452 B2 JP 3318452B2
Authority
JP
Japan
Prior art keywords
frame
metal
electronic component
insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30582394A
Other languages
Japanese (ja)
Other versions
JPH08162555A (en
Inventor
香一 上水口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP30582394A priority Critical patent/JP3318452B2/en
Publication of JPH08162555A publication Critical patent/JPH08162555A/en
Application granted granted Critical
Publication of JP3318452B2 publication Critical patent/JP3318452B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Casings For Electric Apparatus (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は弾性表面波素子や半導体
素子等の電子部品を気密に収容するための電子部品収納
用パッケージに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for storing electronic components such as surface acoustic wave devices and semiconductor devices in an airtight manner.

【0002】[0002]

【従来の技術】従来、電子部品、例えば弾性表面波素子
を収容する電子部品収納用パッケージは、通常、酸化ア
ルミニウム質焼結体等の電気絶縁材料から成り、その上
面の略中央部に弾性表面波素子が搭載される搭載部を有
する絶縁基体と、酸化アルミニウム質焼結体等の電気絶
縁材料から成り、前記弾性表面波素子が搭載される搭載
部を囲繞するように絶縁基体上面に取着される絶縁枠体
と、前記絶縁枠体の内側から外側にかけて導出され、弾
性表面波素子を外部電気回路に電気的に接続するための
タングステン、モリブデン、マンガン等の高融点金属粉
末から成る複数個のメタライズ配線層と、鉄−ニッケル
−コバルト合金や鉄−ニッケル合金等の金属材料から成
る蓋体とから構成されており、絶縁基体の弾性表面波素
子搭載部に弾性表面波素子を接着剤を介して接着固定す
るとともに該弾性表面波素子の電極をボンディングワイ
ヤを介してメタライズ配線層に接続し、しかる後、絶縁
枠体上面に金属製蓋体を溶接し、絶縁基体と絶縁枠体と
金属製蓋体とから成る容器内部に弾性表面波素子を気密
に収容することによって最終製品としての弾性表面波装
置となる。
2. Description of the Related Art Conventionally, an electronic component housing package for housing an electronic component, for example, a surface acoustic wave element, is usually made of an electrically insulating material such as an aluminum oxide sintered body, and has an elastic surface substantially at the center of its upper surface. An insulating base having a mounting portion on which the wave element is mounted, and an electrically insulating material such as an aluminum oxide sintered body, which is attached to an upper surface of the insulating base so as to surround the mounting portion on which the surface acoustic wave element is mounted. And a plurality of insulating frames derived from the inside to the outside of the insulating frame and made of a high melting point metal powder such as tungsten, molybdenum, or manganese for electrically connecting the surface acoustic wave element to an external electric circuit. And a cover made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. The wave element is bonded and fixed with an adhesive, and the electrodes of the surface acoustic wave element are connected to the metallized wiring layer via bonding wires. Thereafter, a metal lid is welded to the upper surface of the insulating frame to form an insulating substrate. The surface acoustic wave element is hermetically accommodated inside a container formed of a metal frame, an insulating frame, and a metal lid, thereby providing a surface acoustic wave device as a final product.

【0003】尚、前記従来の電子部品収納用パッケージ
は通常、絶縁枠体の上面に、表面にニッケルメッキ層が
被着されている鉄−ニッケル−コバルト合金や鉄−ニッ
ケル合金等の金属材料から成る金属枠体を予めロウ付け
しておき、該金属枠体の表面に被着されているニッケル
メッキを溶接時に溶融させ、溶融ニッケルメッキで金属
枠体と金属製蓋体とを接合させることによって金属製蓋
体は絶縁枠体の上面に取着され、これによって絶縁基体
と絶縁枠体と金属製蓋体とから成る容器が気密に封止さ
れる。
The conventional electronic component housing package is usually made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy having a nickel plating layer formed on the upper surface of an insulating frame. The metal frame is brazed in advance, the nickel plating adhered to the surface of the metal frame is melted at the time of welding, and the metal frame and the metal lid are joined by molten nickel plating. The metal lid is attached to the upper surface of the insulating frame, whereby the container including the insulating base, the insulating frame, and the metal lid is hermetically sealed.

【0004】また前記絶縁枠体への金属枠体のロウ付け
はまず絶縁枠体の上面にタングステンやモリブデン、マ
ンガン等の高融点金属粉末から成るメタライズ金属層を
従来周知のスクリーン印刷法等の厚膜手法を採用するこ
とによって被着形成し、次に前記枠状メタライズ金属層
上に銀ロウ等のロウ材と金属枠体とを順次載置させ、最
後に前記ロウ材に約800 ℃の温度を印加し、ロウ材を加
熱溶融させることによって行われる。
[0004] In addition, the metal frame is brazed to the insulating frame by first forming a metallized metal layer made of a high melting point metal powder such as tungsten, molybdenum or manganese on the upper surface of the insulating frame by a known screen printing method or the like. Then, a brazing material such as silver brazing and a metal frame are sequentially placed on the frame-shaped metallized metal layer, and finally a temperature of about 800 ° C. is applied to the brazing material. Is applied and the brazing material is heated and melted.

【0005】更に前記金属枠体の表面に被着されている
ニッケルメッキ層は従来周知の電解メッキ法や無電解メ
ッキ法を採用することによって金属枠体の表面に所定厚
みに被着される。
Further, the nickel plating layer applied to the surface of the metal frame is applied to a predetermined thickness on the surface of the metal frame by employing a conventionally known electrolytic plating method or electroless plating method.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、近時、
電子機器は小型化が急激に進み、これに伴って電子部品
収納用パッケージも小型化が要求され、絶縁枠体の厚み
が薄くなってきたこと、金属枠体の表面に被着されてい
るニッケルメッキ層はその溶融温度が1100℃〜1400℃と
高いこと等から溶接により金属枠体の表面に被着されて
いるニッケルメッキ層を溶融させ、該溶融するニッケル
メッキ層で金属枠体と金属製蓋体とを接合させることに
よって絶縁基体と絶縁枠体と金属製蓋体とから成る容器
内部に弾性表面波素子等を気密に収容する場合、金属製
蓋体を金属枠体に溶接させる際の熱ショックによって絶
縁枠体にクラックが発生し、その結果、容器内部の気密
封止が破れ、容器内部に収容する弾性表面波素子等を長
期間にわたり正常、且つ安定に作動させることができな
いという欠点を有していた。
However, recently,
As electronic equipment has been rapidly reduced in size, the size of the package for storing electronic components has also been required to be smaller, and the thickness of the insulating frame has been reduced, and the nickel on the surface of the metal frame has been reduced. Since the melting temperature of the plating layer is as high as 1100 ° C to 1400 ° C, the nickel plating layer deposited on the surface of the metal frame by welding is melted, and the molten nickel plating layer is used to form the metal frame and the metal. When a surface acoustic wave element or the like is hermetically accommodated in a container composed of an insulating base, an insulating frame, and a metal lid by joining the lid, when the metal lid is welded to the metal frame, Cracks occur in the insulating frame due to thermal shock. As a result, the hermetic seal inside the container is broken, and the surface acoustic wave element or the like housed inside the container cannot be operated normally and stably for a long period of time. Has It had.

【0007】[0007]

【発明の目的】本発明は上記欠点に鑑み案出されたもの
で、その目的は容器内部の気密封止を完全とし、内部に
収容する電子部品を長期間にわたり正常、且つ安定に作
動させることができる電子部品収納用パッケージを提供
することにある。
SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to complete the hermetic sealing of the inside of a container and to allow the electronic components housed therein to operate normally and stably for a long period of time. It is an object of the present invention to provide a package for storing electronic components.

【0008】[0008]

【課題を解決するための手段】本発明は上面に電子部品
が搭載される搭載部を有する絶縁基体と、前記電子部品
が搭載される搭載部を囲繞するように前記絶縁基体上面
に取着された絶縁枠体と、前記絶縁枠体の上面に被着さ
れた枠状のメタライズ金属層と、前記枠状のメタライズ
金属層にロウ付けされる金属枠体と、前記金属枠体上面
に溶接される金属製蓋体とから成る電子部品収納用パッ
ケージであって、前記金属枠体の前記メタライズ金属層
にロウ付けされた部位を除く表面を、リンを9.0乃至12.
0重量%含有するニッケルメッキ層で被覆したことを特
徴とするものである。
According to the present invention, there is provided an insulating substrate having a mounting portion on which an electronic component is mounted on an upper surface, and an insulating substrate mounted on the upper surface of the insulating substrate so as to surround the mounting portion on which the electronic component is mounted. An insulating frame, a frame-shaped metallized metal layer attached to the upper surface of the insulating frame, a metal frame brazed to the frame-shaped metalized metal layer, and welded to the upper surface of the metal frame. An electronic component storage package comprising: a metal lid body, wherein the surface of the metal frame body except for a portion brazed to the metallized metal layer is coated with phosphorus from 9.0 to 12.
It is characterized by being coated with a nickel plating layer containing 0% by weight.

【0009】また本発明は前記ニッケルメッキ層の厚み
が0.5 μm乃至3.0 μmであることを特徴とするもので
ある。
In the present invention, the thickness of the nickel plating layer is 0.5 μm to 3.0 μm.

【0010】[0010]

【作用】本発明の電子部品収納用パッケージによれば、
金属枠体のメタライズ金属層にロウ付けされた部位を除
く表面に被着されるニッケルメッキ層にリンを9.0乃至1
2.0重量%含有させたことからニッケルメッキ層の溶接
による溶融温度が900℃程度の低い温度となり、その結
果、金属枠体と金属製蓋体とを溶接により接合させ、絶
縁基体と絶縁枠体と金属製蓋体とから成る容器内部に弾
性表面波素子等の電子部品を気密に収容しても絶縁枠体
に大きな熱ショックが印加され、クラックを発生するこ
とは一切なく、これによって容器内部の気密封止を完全
とし、容器内部に収容する弾性表面波素子等を長期間に
わたり正常、且つ安定に作動させることが可能となる。
According to the electronic component storage package of the present invention,
Phosphorus is applied to the nickel plating layer on the surface except for the parts brazed to the metallized metal layer of the metal frame by 9.0-1.
The melting temperature by welding of the nickel plating layer is as low as about 900 ° C. due to the inclusion of 2.0% by weight. As a result, the metal frame and the metal lid are joined by welding, and the insulating base and the insulating frame are joined together. Even when electronic components such as surface acoustic wave elements are hermetically housed inside a container consisting of a metal lid, a large thermal shock is applied to the insulating frame, and no cracks are generated. The hermetic sealing is completed, and the surface acoustic wave element and the like housed inside the container can be operated normally and stably for a long period of time.

【0011】[0011]

【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1及び図2は本発明にかかる電子部品収納用パッ
ケージの一実施例を示し、1 は絶縁基体、2 は絶縁枠
体、3 は金属製蓋体である。この絶縁基体1 と絶縁枠体
2 と金属製蓋体3 とで弾性表面波素子等の電子部品4 を
収容する容器が構成される。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 show an embodiment of an electronic component storage package according to the present invention, in which 1 is an insulating base, 2 is an insulating frame, and 3 is a metal lid. This insulating base 1 and insulating frame
2 and a metal lid 3 constitute a container for accommodating electronic components 4 such as surface acoustic wave devices.

【0012】前記絶縁基体1 は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体、ガラスセラミックス焼結体等から成
り、その上面の略中央部に電子部品4 が搭載される搭載
部1aを有し、該搭載部1aに弾性表面波素子等の電子部品
4 が接着剤を介して搭載固定される。
The insulating substrate 1 is made of a sintered body of aluminum oxide, a sintered body of mullite, a sintered body of aluminum nitride, a sintered body of silicon carbide, a sintered body of glass ceramic, or the like. And a mounting portion 1a on which the electronic component 4 is mounted. The mounting portion 1a has an electronic component such as a surface acoustic wave element.
4 is mounted and fixed via an adhesive.

【0013】前記絶縁基体1 は例えば、酸化アルミニウ
ム質焼結体から成る場合、酸化アルミニウム、酸化珪
素、酸化マグネシウム、酸化カルシウム等の原料粉末に
適当な有機バインダー、可塑剤、溶剤を添加混合して泥
漿物を作るとともに該泥漿物をドクターブレード法やカ
レンダーロール法を採用することによってセラミックグ
リーンシート(セラミック生シート)と成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施すとともにこれを複数枚積層し、約1600℃の温度
で焼成することによって製作される。
When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, a plasticizer, and a solvent are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The slurry is formed, and the slurry is formed into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method or a calendar roll method. Thereafter, the ceramic green sheet is subjected to an appropriate punching process and It is manufactured by stacking a plurality of sheets and firing at a temperature of about 1600 ° C.

【0014】また前記絶縁基体1 には電子部品4 を搭載
する搭載部1a周辺から側面を介し底面にかけて導出する
複数個のメタライズ配線層5 が被着形成されており、電
子電子部品搭載部1a周辺に位置するメタライズ配線層5
の一端には電子部品4 の各電極がボンディングワイヤ6
を介して電気的に接続され、また絶縁基体1 の底面に導
出する部位には外部電気回路が半田等のロウ材を介して
電気的に接続される。
A plurality of metallized wiring layers 5 extending from the periphery of the mounting portion 1a on which the electronic component 4 is mounted to the bottom surface via the side surface are formed on the insulating substrate 1, and the metallized wiring layer 5 is formed around the mounting portion 1a. Metallized wiring layer 5 located at
Each electrode of the electronic component 4 has a bonding wire 6
And an external electric circuit is electrically connected to a portion extending to the bottom surface of the insulating base 1 via a brazing material such as solder.

【0015】前記絶縁基体1 に形成したメタライズ配線
層5 はタングステン、モリブデン、マンガン等の高融点
金属粉末から成り、該メタライズ配線層5 は容器内部に
収容する電子部品4 の各電極を外部電気回路に電気的接
続する作用を為す。
The metallized wiring layer 5 formed on the insulating base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese, etc. The metallized wiring layer 5 is used to connect the electrodes of the electronic component 4 housed in the container to an external electric circuit. It acts to electrically connect to

【0016】前記メタライズ配線層5 は例えば、タング
ステン等の高融点金属粉末に適当な有機バインダー、可
塑剤、溶剤を添加混合して得た金属ペーストを絶縁基体
1 となるセラミックグリーンシートに予め従来周知のス
クリーン印刷法により所定パターンに印刷塗布しておく
ことによって絶縁基体1 の所定位置に所定パターンに被
着形成される。
The metallized wiring layer 5 is made of, for example, a metal paste obtained by adding a suitable organic binder, a plasticizer and a solvent to a high melting point metal powder such as tungsten or the like and mixing the same with an insulating substrate.
By printing and applying a predetermined pattern on the ceramic green sheet to be 1 in advance by a conventionally known screen printing method, the ceramic green sheet is adhered and formed at a predetermined position on the insulating substrate 1 in a predetermined pattern.

【0017】尚、前記メタライズ配線層5 はその露出す
る表面にニッケル、金等の耐蝕性に優れ、且つロウ材と
濡れ性の良い金属をメッキ法により1.0 乃至20.0μm の
厚みに層着させておくとメタライズ配線層5 の酸化腐食
を有効に防止することができるとともにメタライズ配線
層5 とボンディングワイヤ6 との接続、及びメタライズ
配線層5 と外部電気回路とのロウ材を介しての接続を強
固となすことができる。従って、前記メタライズ配線層
5 の表面にはニッケル、金等の耐蝕性に優れ、且つロウ
材と濡れ性が良い金属をメッキ法により1.0 乃至20.0μ
mの厚みに層着させておくことが好ましい。
The metallized wiring layer 5 is formed by plating a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with a brazing material to a thickness of 1.0 to 20.0 μm on the exposed surface by plating. By doing so, oxidation corrosion of the metallized wiring layer 5 can be effectively prevented and the connection between the metallized wiring layer 5 and the bonding wire 6 and the connection between the metallized wiring layer 5 and the external electric circuit via a brazing material are strengthened. Can be made. Therefore, the metallized wiring layer
The surface of 5 is made of a metal with excellent corrosion resistance, such as nickel and gold, and a good wettability with brazing material, 1.0 to 20.0μ by plating.
It is preferable to coat the layer with a thickness of m.

【0018】また前記絶縁基体1 の上面には電子部品搭
載部1aを囲繞するようにして絶縁枠体2 が取着されてお
り、該絶縁枠体2 の内側と絶縁基体1 上面とで形成され
る空間が電子部品4 を収容するための空所となる。
An insulating frame 2 is attached to the upper surface of the insulating substrate 1 so as to surround the electronic component mounting portion 1a. The insulating frame 2 is formed by the inside of the insulating frame 2 and the upper surface of the insulating substrate 1. The space which becomes the space for housing the electronic component 4.

【0019】前記絶縁枠体2 は絶縁基体1 と同様の電気
絶縁材料、具体的には酸化アルミニウム質焼結体、ムラ
イト質焼結体、窒化アルミニウム質焼結体、炭化珪素質
焼結体、ガラスセラミックス焼結体等から成り、絶縁基
体1を製作する際と同じ方法によって枠状のセラミック
グリーンシート(セラミック生シート)を得、これを絶
縁基体1 となるセラミックグリーンシート上に予め載置
させておくことによって絶縁基体1 上に一体的に取着さ
れる。
The insulating frame 2 is made of the same electrical insulating material as the insulating base 1, specifically, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, A frame-shaped ceramic green sheet (green ceramic sheet) made of a glass-ceramic sintered body or the like and obtained by the same method as that for manufacturing the insulating base 1 is placed on the ceramic green sheet serving as the insulating base 1 in advance. By doing so, they are integrally attached on the insulating base 1.

【0020】前記絶縁枠体2 は更にその上面に枠状のメ
タライズ金属層7 が被着形成されており、該メタライズ
金属層7 には金属枠体8 がロウ材を介してロウ付けされ
ている。
The insulating frame 2 is further provided with a frame-shaped metallized metal layer 7 on the upper surface thereof, and a metal frame 8 is brazed to the metallized metal layer 7 via a brazing material. .

【0021】前記絶縁枠体2 上面の枠状のメタライズ金
属層7 はタングステン、モリブデン、マンガン等の高融
点金属粉末から成り、該メタライズ金属層7 は金属枠体
8 を絶縁枠体2 にロウ付けする際の下地金属層として作
用する。
The frame-shaped metallized metal layer 7 on the upper surface of the insulating frame 2 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.
8 acts as a base metal layer when brazing to the insulating frame 2.

【0022】前記枠状のメタライズ金属層7 はタングス
テン等の高融点金属粉末に適当な有機バインダー、可塑
剤、溶剤を添加混合して得た金属ペーストを絶縁枠体2
となる枠状のセラミックグリーンシート上に従来周知の
スクリーン印刷法により予め所定厚みに印刷塗布してお
くことによって絶縁枠体2 の上面に被着形成される。
The frame-shaped metallized metal layer 7 is made of a metal paste obtained by adding a suitable organic binder, a plasticizer and a solvent to a high melting point metal powder such as tungsten and mixing the same with the insulating frame 2.
The ceramic green sheet in the form of a frame is printed and applied to a predetermined thickness in advance by a conventionally known screen printing method, so that the ceramic green sheet is adhered to the upper surface of the insulating frame 2.

【0023】また前記メタライズ金属層7にロウ材を介
してロウ付けされている金属枠体8は鉄−ニッケル−コ
バルト合金や鉄−ニッケル合金等の金属材料から成り、
該金属枠体8は鉄−ニッケル−コバルト合金や鉄−ニッ
ケル合金等の金属材料から成る金属製蓋体3を絶縁枠体2
に取着する際の下地金属部材として作用し、金属枠体8
に金属製蓋体3をシームウエルド法等により溶接するこ
とによって金属製蓋体3は絶縁枠体2上に取着される。
The metal frame 8 brazed to the metallized metal layer 7 via a brazing material is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
The metal frame 8 is made of a metal cover 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
Acts as a base metal member when attaching to the metal frame 8
The metal lid 3 is attached to the insulating frame 2 by welding the metal lid 3 by a seam welding method or the like.

【0024】尚、前記鉄−ニッケル−コバルト合金や鉄
−ニッケル合金等の金属材料から成る金属枠体8は鉄−
ニッケル−コバルト合金等のインゴット(塊)を圧延加
工法や打ち抜き加工法等、従来周知の金属加工法を採用
することによって所定の枠状に製作される。
The metal frame 8 made of a metal material such as the above-mentioned iron-nickel-cobalt alloy or iron-nickel alloy is
An ingot (a lump) such as a nickel-cobalt alloy is manufactured into a predetermined frame shape by employing a conventionally known metal working method such as a rolling method or a punching method.

【0025】また前記金属枠体8を絶縁枠体2に被着させ
た枠状のメタライズ金属層7にロウ付けするロウ材とし
ては銀−銅合金(銀ロウ)や金−銀合金等が好適に使用
される。
The brazing material to be brazed to the frame-shaped metallized metal layer 7 in which the metal frame 8 is attached to the insulating frame 2 is preferably a silver-copper alloy (silver brazing) or a gold-silver alloy. Used for

【0026】更に前記金属枠体8はメタライズ金属層に
ロウ付けされた部位を除く表面にリンを9.0乃至12.0重
量%含有するニッケルメッキ層9が被着されており、該
ニッケルメッキ層9は金属枠体8に金属製蓋体3を溶接に
より取着させる際に溶融し、金属枠体8と金属製蓋体3と
を接合させる作用を為す。この場合、ニッケルメッキ層
9にはリンが9.0乃至12.0重量%含有されており、溶接に
よる溶融温度が約900℃と低いことから溶接時に絶縁枠
体2に大きな熱ショックが印加されることはなく、その
結果、絶縁枠体2にクラックが発生することは一切な
く、これによって容器内部の気密封止を完全とし、容器
内部に収容する電子部品4を長期間にわたり正常、且つ
安定に作動させることができる。
Further, the metal frame 8 is coated with a nickel plating layer 9 containing 9.0 to 12.0% by weight of phosphorus on the surface except for a portion brazed to the metallized metal layer. When the metal lid 3 is attached to the frame 8 by welding, the metal lid 3 is melted and acts to join the metal frame 8 and the metal lid 3. In this case, the nickel plating layer
9 contains 9.0 to 12.0% by weight of phosphorus, and since the melting temperature by welding is as low as about 900 ° C., a large thermal shock is not applied to the insulating frame 2 during welding. No cracks are generated in the body 2, whereby the hermetic sealing inside the container is completed, and the electronic component 4 housed inside the container can be operated normally and stably for a long period of time.

【0027】前記ニッケルメッキ層9 はリンの含有量が
9.0 重量%未満、或いは12.0重量%を越えるとニッケル
メッキ層9 の溶接による溶融温度が高くなって金属枠体
8 に金属製蓋体3 を溶接により取着させる際に絶縁枠体
2 にクラックが発生してしまう。従って、前記ニッケル
メッキ層9 はリンの含有量が9.0 乃至12.0重量%の範囲
に特定される。
The nickel plating layer 9 has a phosphorus content of
If the content is less than 9.0% by weight or more than 12.0% by weight, the melting temperature of the nickel plating layer 9 due to welding increases and the metal frame
When attaching the metal lid 3 to the
2 cracks. Accordingly, the nickel plating layer 9 has a phosphorus content specified in the range of 9.0 to 12.0% by weight.

【0028】尚、前記ニッケルメッキ層9 はその厚みが
0.5 μm 未満であると金属製蓋体3を金属枠体8 に強固
に接合させるのが困難となる傾向にあり、また3.0 μm
を越えるとニッケルメッキ層9 の電気抵抗値が低くなっ
て溶接の効率が悪くなる傾向にある。従って、前記ニッ
ケルメッキ層9 は金属製蓋体3 を金属枠体8 に効率良
く、強固に接合させるためにその厚みを0.5 μm 乃至3.
0 μm としておくことが好ましい。
The nickel plating layer 9 has a thickness of
If it is less than 0.5 μm, it tends to be difficult to firmly join the metal lid 3 to the metal
If it exceeds, the electric resistance value of the nickel plating layer 9 tends to decrease, and the welding efficiency tends to deteriorate. Accordingly, the nickel plating layer 9 has a thickness of 0.5 μm to 3 μm in order to efficiently and firmly join the metal lid 3 to the metal frame 8.
It is preferable to set it to 0 μm.

【0029】また前記ニッケルメッキ層9 はそれを多層
構造にしておくと接合界面の電気抵抗が上がって溶接時
にニッケルメッキ層9 を速やかに溶融させることがで
き、溶接の効率をより良好となすことができる。従っ
て、前記ニッケルメッキ層9 はそれを多層構造で形成し
ておくことが好ましい。
If the nickel plating layer 9 has a multilayer structure, the electric resistance at the joining interface increases, so that the nickel plating layer 9 can be quickly melted at the time of welding, and the welding efficiency is further improved. Can be. Therefore, it is preferable that the nickel plating layer 9 has a multilayer structure.

【0030】更に前記ニッケルメッキ層9 は金属枠体8
の表面に従来周知の電解メッキ法や無電解メッキ法等を
採用することによって金属枠体8 の表面に所定厚みに被
着され、またニッケルメッキ層9 へのリンの含有は金属
枠体8 に電解メッキ法や無電解メッキ法等でニッケルメ
ッキ層9 を被着させる際にメッキ液中に予め所定量のリ
ンを添加しておくことよって行われる。
Further, the nickel plating layer 9 is
The surface of the metal frame 8 is adhered to the surface of the metal frame 8 to a predetermined thickness by adopting a conventionally known electrolytic plating method, electroless plating method, or the like. When the nickel plating layer 9 is applied by an electrolytic plating method, an electroless plating method, or the like, a predetermined amount of phosphorus is added to a plating solution in advance.

【0031】かくして上述の電子部品収納用パッケージ
によれば、絶縁基体1 の電子部品搭載部1aに弾性表面波
素子等の電子部品4 を接着剤を介して接着固定するとと
もに該電子部品4 の各電極をボンディングワイヤ6 を介
してメタライズ配線層5 に電気的に接続し、しかる後、
絶縁枠体2 の上面にロウ付けした金属枠体8 に金属製蓋
体3 をシームウエルド法等により溶接し、絶縁基体1 と
絶縁枠体2 と金属製蓋体3 とから成る容器内部に電子部
品4 を気密に封止することによって最終製品としての弾
性表面波装置等となる。
Thus, according to the electronic component storage package described above, the electronic component 4 such as a surface acoustic wave element is bonded and fixed to the electronic component mounting portion 1a of the insulating base 1 with an adhesive, and each of the electronic components 4 The electrode is electrically connected to the metallized wiring layer 5 via the bonding wire 6, and thereafter,
A metal lid 3 is welded to a metal frame 8 brazed to the upper surface of the insulating frame 2 by a seam welding method or the like, so that the inside of the container including the insulating base 1, the insulating frame 2 and the metal lid 3 is placed inside the container. By sealing the component 4 airtightly, a surface acoustic wave device or the like as a final product is obtained.

【0032】尚、本発明は上述した実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能である。
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

【0033】[0033]

【発明の効果】本発明の電子部品収納用パッケージによ
れば、金属枠体のメタライズ金属層にロウ付けされた部
位を除く表面に被着されるニッケルメッキ層にリンを9.
0乃至12.0重量%含有させたことからニッケルメッキ層
の溶接による溶融温度が900℃程度の低い温度となり、
その結果、金属枠体と金属製蓋体とを溶接により接合さ
せ、絶縁基体と絶縁枠体と金属製蓋体とから成る容器内
部に弾性表面波素子等の電子部品を気密に収容しても絶
縁枠体に大きな熱ショックが印加され、クラックを発生
することは一切なく、これによって容器内部の気密封止
を完全とし、容器内部に収容する弾性表面波素子等を長
期間にわたり正常、且つ安定に作動させることが可能と
なる。
According to the electronic component storage package of the present invention, the nickel plating layer applied to the surface of the metal frame except for the portion brazed to the metallized metal layer is doped with phosphorus.
The melting temperature by welding of the nickel plating layer becomes a low temperature of about 900 ° C. from 0 to 12.0% by weight,
As a result, even when the metal frame and the metal lid are joined by welding, electronic components such as surface acoustic wave elements are hermetically housed inside the container including the insulating base, the insulating frame, and the metal lid. A large thermal shock is applied to the insulating frame, and no cracks are generated. This completes the hermetic sealing of the inside of the container, and the surface acoustic wave element etc. housed inside the container is normal and stable for a long time. Can be operated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子部品収納用パッケージの一実施例
を示す断面図である。
FIG. 1 is a cross-sectional view showing an embodiment of an electronic component storage package according to the present invention.

【図2】図1に示す電子部品収納用パッケージの要部拡
大断面図である。
FIG. 2 is an enlarged sectional view of a main part of the electronic component storage package shown in FIG.

【符号の説明】[Explanation of symbols]

1・・・・・・絶縁基体 1a・・・・・電子部品搭載部 2・・・・・・絶縁枠体 3・・・・・・金属製蓋体 4・・・・・・電子部品 5・・・・・・メタライズ配線層 7・・・・・・メタライズ金属層 8・・・・・・金属枠体 9・・・・・・ニッケルメッキ層 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Electronic component mounting part 2 ... Insulating frame 3 ... Metal lid 4 ... Electronic component 5 ...... Metallized wiring layer 7 Metallized metal layer 8 Metal frame 9 Nickel plated layer

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 23/00 - 23/12 H01L 21/56 H01L 23/28 - 23/30 H03H 9/25 H05K 5/00 Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/00-23/12 H01L 21/56 H01L 23/28-23/30 H03H 9/25 H05K 5/00

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 上面に電子部品が搭載される搭載部を有
する絶縁基体と、前記電子部品が搭載される搭載部を囲
繞するように前記絶縁基体上面に取着された絶縁枠体
と、前記絶縁枠体の上面に被着された枠状のメタライズ
金属層と、前記枠状メタライズ金属層にロウ付けされ
る金属枠体と、前記金属枠体上面に溶接される金属製蓋
体とから成る電子部品収納用パッケージであって、前記
金属枠体の前記メタライズ金属層にロウ付けされた部位
を除く表面を、リンを9.0乃至12.0重量%含有するニッ
ケルメッキ層で被覆したことを特徴とする電子部品収納
用パッケージ。
An insulating base having a mounting portion on which an electronic component is mounted on an upper surface; an insulating frame attached to the upper surface of the insulating base so as to surround the mounting portion on which the electronic component is mounted; from the metallized metal layer upper surface deposited by a frame-shaped insulating frame, a metal frame body that is brazed to the frame-shaped metallized metal layer, a metallic lid which is welded to the metal frame top Electronic component storage package comprising: a portion brazed to the metallized metal layer of the metal frame
A package for storing electronic components, characterized in that the surface excluding the above is covered with a nickel plating layer containing 9.0 to 12.0% by weight of phosphorus.
【請求項2】 前記ニッケルメッキ層の厚みが0.5μm
乃至3.0μmであることを特徴とする請求項1に記載の
電子部品収納用パッケージ。
2. The thickness of the nickel plating layer is 0.5 μm.
The electronic component storage package according to claim 1, wherein the thickness of the electronic component storage package is from 3.0 to 3.0 µm.
JP30582394A 1994-12-09 1994-12-09 Electronic component storage package Expired - Fee Related JP3318452B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30582394A JP3318452B2 (en) 1994-12-09 1994-12-09 Electronic component storage package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30582394A JP3318452B2 (en) 1994-12-09 1994-12-09 Electronic component storage package

Publications (2)

Publication Number Publication Date
JPH08162555A JPH08162555A (en) 1996-06-21
JP3318452B2 true JP3318452B2 (en) 2002-08-26

Family

ID=17949807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30582394A Expired - Fee Related JP3318452B2 (en) 1994-12-09 1994-12-09 Electronic component storage package

Country Status (1)

Country Link
JP (1) JP3318452B2 (en)

Also Published As

Publication number Publication date
JPH08162555A (en) 1996-06-21

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