JPH1167950A - Electronic component housing package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component housing package, which makes completely the hermetic sealing of a container and can actuate an electronic component, which is housed in the interior of the container, normally and stably extending over a long period of time. SOLUTION: In an electronic component housing package, which consists of a ceramic base body 1 having a frame body 2 on the outer peripheral part of the upper surface thereof, a frame-shaped metallized metal layer 7 adhered on the upper surface of the frame part 2, a metal frame body 8 soldered to the metallized metal layer 7 and a metallic cover body 3, which is welded to the metal frame body 8 and is housed hermetically with an electronic component 4 in the interior thereof, and the coefficient of thermal expansion at 200 to 800 deg.C of the frame body 8 is set at 7.5×10<-6> / deg.C or lower.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating electronic components such as a semiconductor device, a quartz oscillator, and a surface acoustic wave device.

[0002]

2. Description of the Related Art Conventionally, electronic component housing packages for housing electronic components such as semiconductor elements, quartz oscillators, surface acoustic wave elements, etc. are generally made of an electrically insulating material such as an aluminum oxide sintered body. A ceramic base having a frame portion on an outer peripheral portion, a metallized wiring layer made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like derived from the inside to the outside of the frame portion of the ceramic base, and attached to an upper surface of the frame portion of the ceramic base And a metal lid made of iron-nickel-cobalt alloy, iron-nickel alloy, or the like. The electronic component such as a semiconductor element or a quartz oscillator is accommodated inside the frame of the ceramic base. Each electrode is connected to a predetermined metallized wiring layer via a bonding wire. Welding the genus made lid, the electronic device as a final product by sealing the electronic component hermetically container interior made of a ceramic base and the metallic lid.

The above-mentioned conventional package for housing electronic components is usually provided with a metal frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy on an upper surface of a frame portion of a ceramic base made of an aluminum oxide sintered body or the like. The metal cover is attached to the upper surface of the ceramic base by welding the metal cover to the metal frame by a seam welding method or the like in advance by attaching the body via a brazing material such as silver brazing. Thus, the inside of the container composed of the ceramic base and the metal lid is hermetically sealed.

In order to attach the metal frame to the upper surface of the frame of the ceramic substrate, first, the upper surface of the frame of the ceramic substrate is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like in an area slightly larger than the metal frame. A metallized metal layer is formed by applying a conventionally known thick film method such as a screen printing method, and then a brazing material such as silver braze and a metal frame are sequentially placed on the metallized metal layer. And finally apply a temperature of about 800 ° C. to the brazing material,
This is performed by heating and melting the brazing material.

[0005]

However, recently,
The size of electronic devices has been rapidly reduced, and the size of electronic devices mounted on the electronic devices and, at the very least, electronic component storage packages have been required to be extremely small. Frame width is 0.4
mm, the mechanical strength of the frame portion becomes weak, and the metalized metal layer applied to the upper surface of the frame portion has a small area to be applied, so that the applied strength has become extremely weak.

Therefore, in this electronic component storage package, electronic components such as semiconductor elements and quartz oscillators are accommodated inside the frame of the ceramic base, and a metal lid is attached to the metal frame on the upper surface of the frame by welding. When manufacturing an electronic device, only the metal frame is heated to a high temperature of about 700 ° C. and the coefficient of thermal expansion of the metal frame at 200 to 800 ° C. is as large as about 11 × 10 ⁻⁶ / ° C., so that the frame portion of the ceramic base is Thermal expansion and thermal shrinkage are greater than in the above, and stress is generated between the frame of the ceramic base and the metal frame. This stress acts on the outside of the metallized metal layer, and the metallized metal layer is moved to the frame of the ceramic base. The hermetic seal of the container is broken by peeling from the upper surface or acting on the frame portion having low mechanical strength, especially on the base of the frame portion, causing cracks or cracks in the frame portion, and as a result, the inside of the container is broken. Normal electronic components to accommodate for a long period of time in, and had the disadvantage that it can not be stably operated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electronic component housing package that can completely and hermetically seal a container and can operate electronic components housed inside the container normally and stably for a long period of time.

[0008]

According to the present invention, there is provided a ceramic base having a frame portion on the outer peripheral portion of the upper surface, a frame-shaped metallized metal layer adhered to the upper surface of the frame portion, and brazed to the metallized metal layer. And a metal lid welded to the metal frame. The electronic component storage package hermetically stores electronic components therein.
The coefficient of thermal expansion at 00 to 800 ° C. is 7.5 × 10 ⁻⁶ /
C. or lower.

Further, the present invention is characterized in that the metal frame is made of at least one of a copper-tungsten alloy, a copper-molybdenum alloy, tungsten, and molybdenum.

According to the electronic component housing package of the present invention, the metal frame brazed to the upper surface of the frame portion of the ceramic base is made of a copper-tungsten alloy, a copper-molybdenum alloy, tungsten, molybdenum or the like. 8
When the metal lid is welded to the metal frame by a seam welding method or the like, the metal frame has a large thermal expansion coefficient because it is formed of a metal material having a thermal expansion coefficient of 7.5 × 10 ⁻⁶ / ° C. or less at 00 ° C. , Without heat shrinkage, as a result, a large stress is generated between the frame portion of the ceramic base and the metal frame,
It is possible to effectively prevent cracks and cracks in the frame portion of the ceramic substrate due to the stress, and to effectively prevent the metallized metal layer from peeling off from the frame portion. The reliability of hermetic sealing of a container made of the above can be made extremely high, and the electronic components housed inside the container can be operated normally and stably for a long period of time.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show an embodiment in which the electronic component housing package of the present invention is applied to a package housing a semiconductor element. Reference numeral 1 denotes a ceramic base having a frame portion 2 on the outer peripheral portion of the upper surface; It is a lid. The ceramic base 1 having the frame portion 2 and the metal lid 3 constitute a container for accommodating the semiconductor element 4 therein.

A ceramic substrate 1 having a frame portion 2 on the outer peripheral portion of the upper surface includes an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body,
A mounting portion 1a on which the semiconductor element 4 is mounted is provided at the center of the upper surface of the ceramic base 1 inside the frame portion 2 of the glass ceramic sintered body, and the semiconductor element 4 is mounted on the mounting portion 1a. It is attached via an adhesive such as brazing material, glass, resin, or the like.

When the ceramic substrate 1 having the frame portion 2 on the outer periphery of the upper surface is made of, for example, an aluminum oxide sintered body, a suitable organic solvent or solvent is added to aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, or the like. A green sheet (raw sheet) is formed by mixing into a slurry and employing a well-known doctor blade method or calender roll method. Thereafter, the green sheet is subjected to appropriate punching and It is manufactured by stacking sheets and firing at a high temperature (about 1800 ° C.).

A plurality of metallized wiring layers 5 extending from the inside of the frame 2 to the lower surface of the ceramic base 1 are formed on the ceramic base 1 so as to be adhered to the inside of the frame 2 of the metallized wiring layer 5. The electrode of the semiconductor element 4 is electrically connected via a bonding wire 6, and a portion led out to the lower surface of the ceramic base 1 is electrically connected to a wiring conductor (not shown) of an external electric circuit board via solder or the like. Connected.

The plurality of metallized wiring layers 5 provided on the ceramic base 1 are made of a metal powder such as tungsten, molybdenum, manganese, etc., and the metallized wiring layers 5 connect each electrode of the semiconductor element 4 to a predetermined external electric circuit. It works to connect to each other.

The metallized wiring layer 5 is formed, for example, by applying a metal paste obtained by adding an organic solvent and a solvent to a metal powder such as tungsten to a predetermined pattern on a green sheet serving as the ceramic substrate 1 by a conventionally well-known screen printing method. By printing and applying, a predetermined pattern is applied from the inside of the frame 2 to the lower surface of the ceramic base 1.

The metallized wiring layer 5 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
If it is applied to a thickness of 0.0 μm, oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external electric circuit board The connection with the wiring conductor can be made strong. Therefore, a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material is applied to the surface of the metallized wiring layer 5 by a plating method to a thickness of 1.0 to 20.0 μm. Is preferred.

A metallized metal layer 7 is formed on the upper surface of the frame 2 of the ceramic base 1 and a metal frame 8 is brazed to the metallized metal layer 7 via a brazing material 9. .

The metallized metal layer 7 on the upper surface of the frame 2 of the ceramic substrate 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.
Acts as a base metal layer when the metal frame 8 is brazed to the ceramic base 1.

The metallized metal layer 7 is prepared by adding a suitable organic solvent and a solvent to a metal powder such as tungsten and mixing a metal paste on a green sheet serving as the ceramic substrate 1 by a conventionally known screen printing method or the like. By printing and applying in a predetermined pattern with a predetermined thickness, the ceramic substrate 1 is formed on the upper surface of the frame portion 2 in a frame shape.

The metallized metal layer 7 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
When the metallized metal layer 7 is deposited to a thickness of 0.0 μm, oxidation corrosion of the metallized metal layer 7 can be effectively prevented, and the brazing between the metallized metal layer 7 and the metal frame 8 can be made firm. . Therefore, the surface of the metallized metal layer 7 is coated with a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with the brazing material by a plating method.
Preferably, it is applied to a thickness of 0.0 μm.

Further, a metal frame 8 brazed to the metallized metal layer 7 via a brazing material 9 comprises a metal lid 2 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy and a ceramic base 1. Acts as a base metal member when the metal cover 2 is attached to the metal frame 8, and is welded to the metal frame 8 by a seam welding method or the like.
Is mounted on the frame 2 of the ceramic base 1.

The metal frame 8 is made of a copper-tungsten alloy,
2 of copper-molybdenum alloy, tungsten, molybdenum, etc.
The coefficient of thermal expansion at 00 to 800 ° C. is 7.5 × 10 ⁻⁶ /
The metal frame 8 is made of a metal material having a thermal expansion coefficient of 7.5 × 10 ^{−6 at} 200 to 800 ° C.
/ ° C or less, when the metal lid 3 is welded to the metal frame 8 by a seam welding method or the like, the metal frame 8 greatly expands and contracts, and the frame 2 of the ceramic base 1 and the metal frame A large stress is not generated between the ceramic body 1 and the frame portion 2 of the ceramic base 1 due to the stress.
Cracks or cracks in the metallized metal layer 7
Hardly peels off from the frame portion 2, whereby the reliability of hermetic sealing of the container composed of the ceramic base 1 and the metal lid 3 is extremely high, and the semiconductor element housed inside the container 4 can operate normally and stably over a long period of time.

When the metal frame 8 has a coefficient of thermal expansion at 200 to 800 ° C. exceeding 7.5 × 10 ⁻⁶ / ° C., the metal lid 3 is welded to the metal frame 8 by a seam welding method or the like. A large stress is generated between the frame portion 2 of the ceramic base 1 and the metal frame 8, and the stress causes peeling of the metallized metal layer 7 and cracks of the frame portion 2. . Therefore, the metal frame 8 is the second
The coefficient of thermal expansion at 00 to 800 ° C. is 7.5 × 10 ⁻⁶ /
It is specified below ° C.

When the metal frame 8 is formed of, for example, a copper-tungsten alloy, a metal having a predetermined shape is filled with tungsten and copper powder and press-molded to obtain a frame-shaped molded body. After that, this is heated to a high temperature (about 1250 to
By firing at 1350 ° C.), a predetermined frame shape is formed.

The metal frame 8 further includes a ceramic base 1
Is brazed to a metallized metal layer 7 provided on the upper surface of the frame portion 2 via a brazing material 9, and for example, a silver brazing material such as a silver-copper alloy is used.

The brazing attachment of the metal frame 8 and the metallized metal layer 7 via the brazing material 9 made of the silver brazing material is as follows.
A brazing material 9 previously punched into a predetermined frame shape and a metal frame 8 are sequentially placed on the metallized metal layer 7 and then heated to a temperature of about 850 ° C. to heat the brazing material 9. It is performed by melting.

Thus, according to the above-described package, the semiconductor element 4 is attached to the mounting portion 1a located inside the frame portion 2 of the ceramic base 1 via an adhesive such as brazing material, glass, resin, or the like. 4 is electrically connected to the metallized wiring layer 5 via the bonding wire 6, and then the metal lid 3 is attached to the metal frame 8 brazed on the upper surface of the frame 2 of the ceramic base 1. The semiconductor device 4 is hermetically sealed in a container made of a ceramic base 1 having a frame portion 2 on the outer peripheral portion of the upper surface and a metal lid 3 by welding or the like, thereby providing an electronic device as a final product.

The present invention is not limited to the above-described package, and various modifications can be made without departing from the scope of the present invention. It has been described that the metallized wiring layer 5 derived from the above is directly connected to the wiring conductor of the external electric circuit board, but the external lead terminals are previously brazed to the metallized wiring layer 5 and the external lead terminals are connected to the external electric circuit. By doing so, the electronic components housed inside the container may be connected to an external electric circuit.

[0030]

According to the electronic component housing package of the present invention, the metal frame brazed to the upper surface of the frame of the ceramic base is made of a copper-tungsten alloy, a copper-molybdenum alloy, tungsten, molybdenum, or the like. 200 ~
Since the metal frame has a thermal expansion coefficient of not more than 7.5 × 10 ⁻⁶ / ° C. at 800 ° C., when the metal lid is welded to the metal frame by a seam welding method or the like, the metal frame greatly expands. As a result, a large stress is generated between the frame portion of the ceramic base and the metal frame, and the stress may cause cracks and cracks in the frame of the ceramic base, or may cause a metallized metal. It is possible to effectively prevent the layer from peeling off from the frame portion, and thereby, the reliability of hermetic sealing of the container composed of the ceramic base and the metal lid is extremely high, and the layer is housed inside the container. The electronic component to be operated can operate normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an embodiment in which an electronic component housing package of the present invention is applied to a package housing a semiconductor element.

FIG. 2 is an enlarged sectional view of a main part of the package shown in FIG.

[Explanation of symbols]

 1 ... Ceramic base 2 ... Frame 3 ... Metal cover 4 ... Semiconductor element (electronic component) 5 ... Metalized wiring layer 7 ... ... Metalized metal layer 8 ... Metal frame 9 ... Brazing material

Claims (2)

[Claims] 1. A ceramic base having a frame on the outer periphery of an upper surface, a frame-shaped metallized metal layer attached to the upper surface of the frame, a metal frame brazed to the metallized metal layer,
An electronic component housing package comprising a metal lid welded to the metal frame and hermetically housing the electronic components therein, wherein the metal frame has a coefficient of thermal expansion at 200 to 800 ° C. of 7. An electronic component storage package having a temperature of 5 × 10 ⁻⁶ / ° C. or less. 2. The electronic component storage package according to claim 1, wherein the metal frame is made of at least one of a copper-tungsten alloy, a copper-molybdenum alloy, tungsten, and molybdenum.