JPH1174393A - Package for housing electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for housing an electronic component capable of completely airtightly sealing a container and normally and stably operating the electronic component housed inside the container over the long period of time. SOLUTION: This package is composed of a base body 1 provided with a frame part 2 on an upper surface outer peripheral part, a frame-like metallization metal layer 7 mounted to the upper surface of the frame part 2, a metal frame body 8 brazed to the metallization metal layer 7, and a metallic cover body 3 welded to the metal frame body 8, and an electronic component 4 is airtightly housed inside. In this case, the Vickers hardness(Hv) of the metal frame body 8 is Hv<=100.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating electronic components such as a semiconductor device, a quartz oscillator, and a surface acoustic wave device.

[0002]

2. Description of the Related Art Conventionally, electronic component housing packages for housing electronic components such as semiconductor elements, quartz oscillators, surface acoustic wave elements, etc. are generally made of an electrically insulating material such as an aluminum oxide sintered body. A base having a frame portion on the outer periphery, a metallized wiring layer made of a high melting point metal powder such as tungsten, molybdenum, and manganese derived from the inside to the outside of the frame portion of the base, and attached to the top surface of the base frame;
A metal lid made of iron-nickel-cobalt alloy, iron-nickel alloy, or the like, and accommodates electronic components such as a semiconductor element and a quartz oscillator inside the frame of the base and each electrode of the electronic components. Is connected to a predetermined metallized wiring layer via a bonding wire. Thereafter, a metal lid is welded to the upper surface of the frame of the base, and the electronic components are hermetically sealed inside a container including the base and the metal lid. By stopping, it becomes an electronic device as a final product.

[0003] The conventional package for housing electronic parts is usually formed of a metal frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy on the upper surface of a frame portion of a base made of an aluminum oxide sintered body or the like. Is previously attached via a brazing material such as silver brazing, and a metal lid is welded to the metal frame by a seam welding method or the like, so that the metal lid is attached to the upper surface of the base. Thereby, the inside of the container including the base and the metal lid is hermetically sealed.

The metal frame is attached to the upper surface of the frame of the base by first forming a metallized metal made of a refractory metal powder such as tungsten, molybdenum, or manganese on the upper surface of the frame of the base in a slightly larger area than the metal frame. The layer is deposited and formed by adopting a conventionally known thick film technique such as a screen printing method, and then a brazing material such as silver brazing and a metal frame are sequentially placed on the metallized metal layer, Finally, a temperature of about 800 ° C. is applied to the brazing material, and the brazing material is heated and melted.

[0005]

However, recently,
The size of electronic devices has been rapidly reduced, and electronic devices mounted on the electronic devices and, at the very least, packages for storing electronic components have been required to be extremely small. The width of the frame part is as thin as about 0.4 mm, the mechanical strength of the frame part is weak, and the area of the metallized metal layer deposited on the top of the frame part is also small, and the adhesion strength is extremely low It has become weak.

Therefore, in this electronic component storage package, electronic components such as a semiconductor element and a quartz oscillator are accommodated inside the frame of the base, and a metal lid is attached to the metal frame on the upper surface of the frame by welding. When manufacturing an electronic device, only the metal frame greatly expands and contracts during welding to generate stress between the frame portion of the base and the metal frame, which concentrates on the outside of the metallized metal layer. The metallized metal layer is peeled off from the upper surface of the frame portion of the base, or acts on the frame portion with low mechanical strength, especially on the base of the frame portion to generate cracks and cracks in the frame portion, so that the hermetic sealing of the container is performed. As a result, it has a drawback that the electronic components housed inside the container cannot be operated normally and stably for a long period of time.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electronic component housing package that can completely and hermetically seal a container and can operate electronic components housed inside the container normally and stably for a long period of time.

[0008]

According to the present invention, there is provided a base having a frame portion on the outer peripheral portion of the upper surface, a frame-shaped metallized metal layer attached to the upper surface of the frame portion, and brazing to the metallized metal layer. An electronic component storage package comprising a metal frame and a metal lid welded to the metal frame, wherein the electronic component is hermetically stored therein, wherein the metal frame has a Vickers hardness (Hv). Hv ≦ 100.

Further, the present invention is characterized in that the metal frame is made of nickel.

According to the electronic component housing package of the present invention, the metal frame body brazed and attached to the upper surface of the frame portion of the base has a Vickers hardness (Hv) made of nickel or the like with Hv ≦ Hv.
When the metal lid is welded to the metal frame by a seam welding method or the like, since the metal frame is formed of a soft metal material of 100, the metal frame greatly expands and contracts, and the frame portion of the base and the metal frame are Even if a large stress is generated, the stress is absorbed by appropriately deforming the metal frame, and as a result, cracks and cracks are generated in the frame portion of the base, and the metallized metal layer is It hardly peels off, which makes the reliability of hermetic sealing of the container consisting of the base and the metal lid extremely high, and makes the electronic components housed inside the container normal and stable for a long time. Can be operated.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show an embodiment in which the electronic component housing package of the present invention is applied to a package housing a semiconductor element, wherein 1 is a base having a frame portion 2 on the outer peripheral portion of the upper surface, and 3 is a metal lid. Body. The base 1 having the frame portion 2 and the metal lid 3 constitute a container for accommodating the semiconductor element 4 therein.

The base 1 having a frame 2 at the outer peripheral portion of the upper surface is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, or a glass ceramic sintered body. A mounting portion 1a on which the semiconductor element 4 is mounted is provided at the center of the upper surface of the base 1 inside the frame portion 2, and the semiconductor element 4 is formed of a brazing material, glass, resin or the like on the mounting portion 1a. Attached via adhesive.

When the base 1 having the frame 2 on the outer periphery of the upper surface is made of, for example, an aluminum oxide sintered body, a suitable organic solvent or solvent is added to aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, or the like. Then, a green sheet (raw sheet) is formed by employing a conventionally known doctor blade method or calender roll method, and then the green sheet is subjected to an appropriate punching process and a plurality of sheets are formed. It is manufactured by laminating and firing at a high temperature (about 1800 ° C.).

The base 1 has a plurality of metallized wiring layers 5 extending from the inside of the frame 2 to the lower surface of the base 1.
Is formed, and the frame portion 2 of the metallized wiring layer 5 is formed.
The electrodes of the semiconductor element 4 are electrically connected to the inside through bonding wires 6, and the wiring conductor (not shown) of the external electric circuit board is electrically connected to the portion led out to the lower surface of the base 1 through solder or the like. Connected to.

A plurality of metallized wiring layers 5 provided on the base 1 are made of a metal powder such as tungsten, molybdenum, manganese or the like. The metallized wiring layers 5 electrically connect each electrode of the semiconductor element 4 to a predetermined external electric circuit. Acts to connect to.

For example, the metallized wiring layer 5 is formed by printing a metal paste obtained by adding and mixing an organic solvent and a solvent to a metal powder such as tungsten on a green sheet serving as the substrate 1 in a predetermined pattern by a conventionally well-known screen printing method. By being applied, it is attached and derived in a predetermined pattern from the inside of the frame 2 to the lower surface of the base 1.

The metallized wiring layer 5 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
If it is applied to a thickness of 0.0 μm, oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external electric circuit board The connection with the wiring conductor can be made strong. Therefore, a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material is applied to the surface of the metallized wiring layer 5 by a plating method to a thickness of 1.0 to 20.0 μm. Is preferred.

A metallized metal layer 7 is formed on the upper surface of the frame 2 of the base 1, and a metal frame 8 is brazed to the metallized metal layer 7 via a brazing material 9.

The metallized metal layer 7 on the upper surface of the frame portion 2 of the base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.
Acts as a base metal layer when brazing to the base 1.

The metallized metal layer 7 is coated with a metal paste obtained by adding an appropriate organic solvent and a solvent to a metal powder such as tungsten on a green sheet serving as the substrate 1 in a predetermined thickness by a conventionally known screen printing method or the like. By printing and applying in a predetermined pattern, the substrate 1 is formed on the upper surface of the frame portion 2 in a frame shape.

The metallized metal layer 7 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
When the metallized metal layer 7 is deposited to a thickness of 0.0 μm, oxidation corrosion of the metallized metal layer 7 can be effectively prevented, and the brazing between the metallized metal layer 7 and the metal frame 8 can be made firm. . Therefore, the surface of the metallized metal layer 7 is coated with a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with the brazing material by a plating method.
Preferably, it is applied to a thickness of 0.0 μm.

Further, a metal frame 8 brazed to the metallized metal layer 7 via a brazing material 9 includes a metal lid 2 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy on the base 1. The metal cover 2 acts as a base metal member for attachment, and is welded to the metal frame 8 by a seam welding method or the like, so that the metal cover 2 is attached to the frame 2 of the base 1. .

The metal frame 8 is made of a metal material such as nickel having a Vickers hardness (Hv) of Hv ≦ 100, and the Vickers hardness (Hv) of the metal frame 8 is Hv ≦ Hv ≦ 100.
When the metal lid 8 is welded to the metal frame 8 by the seam welding method or the like, only the metal frame 8 undergoes a large thermal expansion and thermal contraction, so that the frame 2 of the base 1 and the metal frame 8 are welded. Even if a large stress is generated between the metal frame 8 and the metal frame 8, the stress is absorbed by appropriately deforming the metal frame 8, and as a result, cracks and cracks are generated in the frame 2 of the base 1,
The metallized metal layer 7 is hardly peeled off from the frame portion 2, whereby the reliability of hermetic sealing of the container composed of the base 1 and the metal lid 3 is extremely high, and the metallized metal layer 7 is housed inside the container. Semiconductor device 4 can operate normally and stably over a long period of time.

The metal frame 8 has a Vickers hardness (H
When v) becomes Hv> 100, the metal lid 8 is attached to the metal frame 8.
The large stress generated between the frame 2 of the base 1 and the metal frame 8 when welding is performed by the seam welding method or the like cannot be completely absorbed by the metal frame 8, and the metallized metal layer 7
, Or cracks or the like occur in the frame portion 2. Therefore, the Vickers hardness (Hv) of the metal frame 8 is specified to be Hv ≦ 100.

The metal frame 8 is formed in a predetermined frame shape by subjecting an ingot made of nickel or the like to a conventionally known metal working method such as a rolling method or a punching method.

The metal frame 8 is further brazed via a brazing material 9 to a metallized metal layer 7 provided on the upper surface of the frame portion 2 of the base 1, and the brazing material 9 is, for example, silver such as a silver-copper alloy. Brazing material is used.

The brazing attachment of the metal frame 8 and the metallized metal layer 7 via the brazing material 9 made of the silver brazing material is as follows.
A brazing material 9 previously punched into a predetermined frame shape and a metal frame 8 are sequentially placed on the metallized metal layer 7 and then heated to a temperature of about 850 ° C. to heat the brazing material 9. It is performed by melting.

Thus, according to the above-described package, the base 1
The semiconductor element 4 is attached to the mounting portion 1a located inside the frame portion 2 via an adhesive such as brazing material, glass, resin, or the like, and each electrode of the semiconductor element 4 is metalized via a bonding wire 6. Electrically connect to layer 5 and then
The metal lid 3 is welded to the metal frame 8 brazed to the upper surface of the frame 2 of the base 1 by a seam welding method or the like, and is composed of the base 1 having the frame 2 on the outer periphery of the upper surface and the metal lid 3. An electronic device as a final product is obtained by hermetically sealing the semiconductor element 4 inside the container.

The present invention is not limited to the above-described package, and various modifications can be made without departing from the scope of the present invention. Although it has been described that the derived metallized wiring layer 5 is directly connected to the wiring conductor of the external electric circuit board, external lead terminals are previously brazed to the metallized wiring layer 5 and the external lead terminals are connected to the external electric circuit. Thereby, the electronic components housed inside the container may be connected to an external electric circuit.

[0030]

According to the electronic component housing package of the present invention, the metal frame attached to the upper surface of the frame of the base is made of nickel or the like and has a Vickers hardness (Hv) of Hv ≦ 100.
When the metal lid is welded to the metal frame by the seam welding method or the like, since the metal frame is formed of a soft metal material, the metal frame greatly expands and contracts heat, and the frame portion of the base body and the metal frame can be welded. Even if a large stress occurs in between, the stress is absorbed by appropriately deforming the metal frame, and as a result,
There is almost no occurrence of cracks, cracks, etc. in the frame of the base, and the metallized metal layer does not peel off from the frame, which increases the reliability of hermetic sealing of the container consisting of the base and the metal lid. It becomes extremely high, and the electronic components housed inside the container can be operated normally and stably for a long time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an embodiment in which an electronic component housing package of the present invention is applied to a package housing a semiconductor element.

FIG. 2 is an enlarged sectional view of a main part of the package shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Base 2 ... Frame part 3 ... Metal lid 4 ... Semiconductor element (electronic component) 5 Metallized wiring layer 7 ... ..Metalized metal layer 8 ... Metal frame 9 ... Brazing material

Claims (2)

[Claims] 1. A base having a frame on the outer periphery of an upper surface, a frame-shaped metallized metal layer adhered to the upper surface of the frame, a metal frame brazed to the metallized metal layer, and the metal frame An electronic component storage package comprising a metal lid welded to the body and hermetically housing electronic components therein, wherein the metal frame has a Vickers hardness (Hv) of Hv ≦ 100. Electronic component storage package. 2. The electronic component storage package according to claim 1, wherein said metal frame is made of nickel.