JP2543149Y2 - Package for storing semiconductor elements - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to an improvement in a semiconductor device package for housing a semiconductor integrated circuit device.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices, especially LSIs
As shown in FIG. 3, the semiconductor device housing package for housing the semiconductor integrated circuit device is made of an electrically insulating material such as alumina ceramics and has a substantially central portion of the upper surface for housing the semiconductor integrated circuit device. Recess A and the recess
A Tungsten (W) derived from the periphery to the bottom,
An insulating base 21 having a metallized wiring layer 22 made of a high melting point metal powder such as molybdenum (Mo); and a bottom surface of the insulating base 21 of the metallized wiring layer 22 for electrically connecting a semiconductor integrated circuit element to an external electric circuit. A plurality of external lead pins 23 attached via a brazing material such as silver brazing, and a metal lid 24, and a semiconductor integrated circuit element 25 is attached and housed on the bottom surface of the concave portion A of the insulating base 21. At the same time, the respective electrodes of the semiconductor integrated circuit element 25 are connected to the metallized wiring layer 22 via the bonding wires 26, and thereafter, a metal lid 24 is attached to the upper surface of the insulating base 21, so that the insulating base 21 and the metal lid The semiconductor integrated circuit element 25 is hermetically sealed inside the container formed of the semiconductor device 24 to form a semiconductor device as a final product.

A metal frame 28 made of Kovar metal, 42 alloy or the like is brazed on the upper surface of the insulating base 21 in advance, and a metal lid 24 is welded to the metal frame 28 by a seam welding method. By doing so, the metal lid 24 is attached to the insulating base 21, and the container is hermetically sealed.

In recent years, however, semiconductor devices have rapidly increased in density and integration, and the amount of heat generated per unit area and unit volume has increased. The disadvantage is that the generated heat cannot be satisfactorily released to the outside, causing the semiconductor integrated circuit element 25 to be thermally destroyed by the heat generated by the element 25 itself, causing a thermal change in the characteristics, and causing a malfunction. Had.

Therefore, in order to solve the above-mentioned drawback, external lead pins 23 are attached at equal intervals to the surface of the insulating base 21 on the side where the recess A is provided, and the heat generated by the semiconductor integrated circuit element 25 is released to the bottom of the insulating base 21 by air. There has been proposed a package for housing a semiconductor element having a structure in which a heat sink member made of copper, a copper-tungsten alloy, or the like for discharging into the inside is attached.

According to the semiconductor device housing package having such a structure, since the heat sink member is attached to the insulating base 21, the heat generated by the semiconductor integrated circuit device 25 is satisfactorily released into the atmosphere by the heat sink member. The semiconductor integrated circuit element 25 can always be operated stably at a low temperature.

However, in this package for accommodating a semiconductor element, a large number of external lead pins 23 are attached to the surface of the insulating base 21 on the side where the recess A for accommodating the semiconductor integrated circuit element 25 is provided. From the recess of the insulating base 21
After mounting the semiconductor integrated circuit element 25 in A, a metal lid 24 is welded to the insulating base 21 by a seam welding method,
When hermetically sealing the inside of the container, the roller electrode of the seam welding device contacts the external lead pin and its movement is restricted, and the metal lid 24 cannot be reliably and firmly welded to the insulating base 21. As a result, the hermetic sealing inside the package for accommodating the semiconductor element becomes incomplete, and the semiconductor integrated circuit element accommodated therein cannot be operated normally and stably for a long period of time.

[0008]

According to the present invention, a rectangular recess for accommodating a semiconductor element and an external lead pin for connecting the semiconductor element to an external electric circuit are formed on one surface of an insulating substrate. The external lead terminal is attached to the surface of the insulating base except for a region on the extension of each side of the rectangular recess.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the embodiments shown in the accompanying drawings.

FIGS. 1 and 2 show an embodiment of a package for accommodating a semiconductor device according to the present invention, wherein 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is a metal made of Kovar metal or 42 alloy. The lid. The insulating base 1 and the metal lid 2 constitute a container 3 for housing the semiconductor integrated circuit element 4.

The insulating base 1 is provided with a stepped rectangular recess B for accommodating the semiconductor integrated circuit element 4 in the center of the upper surface thereof, and the bottom surface of the recess B is provided with the semiconductor integrated circuit element 4. Are attached via an adhesive.

A metallized wiring layer 5 is extended from the step of the recess B to the upper surface of the insulating base 1 in the insulating substrate 1. The semiconductor integrated circuit element 4 is provided in the step of the concave B in the metallized wiring layer 5. Each electrode is electrically connected via a bonding wire 6, and a portion of the electrode led out to the upper surface of the insulating substrate 1 is a Kovar metal (F) connected to an external electric circuit.
External lead pins 7 made of e-Ni-Co alloy) or 42 alloy (Fe-Ni alloy) are attached via a brazing material such as silver brazing.

When the insulating substrate 1 is made of alumina ceramics, for example, alumina (Al ₂ O ₃ ), magnesia
(MgO), calcia (CaO), etc., an appropriate organic solvent and a solvent are added to and mixed with a raw material powder to form a slurry, which is then formed into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method. Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching processing, laminating a plurality of sheets, and firing at a high temperature (about 1600 ° C.).

The metallized wiring layer 5 is made of a metal powder having a high melting point such as tungsten, molybdenum, manganese or the like. Substrate 1
Is formed over the upper surface of the substrate.

Further, the external lead pins 7 brazed to the metallized wiring layer 5 attached to the insulating base 1 serve to electrically connect the semiconductor integrated circuit element 4 housed therein to an external electric circuit. By connecting the external lead pin 7 to an external electric circuit, the semiconductor integrated circuit element 4 accommodated therein is formed by the metallized wiring layer 5 and the external lead pin 7.
To the external electric circuit via the.

The external lead pins 7 are made of Kovar metal or 42
Ingots made of alloys, etc.
Is formed into a predetermined pin shape by employing a conventionally known metal working method such as a rolling method or a punching method.

As shown in FIG. 2, the external lead pins 7 are formed on an insulating substrate except for a region on an extension of each side of the rectangular recess B.
When the metal lid 2 is welded to the periphery of a rectangular recess B described later by the seam welding method, the roller electrode of the seam welding device does not come into contact with the external lead pin 7. Almost no metal lid 2
Can be securely and firmly attached to the insulating substrate 1.

The metallized wiring layer 5 and the external lead pins 7 are coated on the exposed outer surfaces with a metal having excellent corrosion resistance such as nickel or gold and having good conductivity by plating to a thickness of 1.0 to 1.0.
Metallized wiring layer 5 if layered to a thickness of 20.0 μm
In addition, the oxidation corrosion of the external lead pins 7 is effectively prevented, and the connection between the external lead pins 7 and the external electric circuit and the connection between the metallized wiring layer 5 and the bonding wires 6 become extremely strong. Therefore, it is preferable that the metallized wiring layer 5 and the external lead pins 7 are plated with nickel, gold, or the like on the exposed outer surfaces to a thickness of 1.0 to 20.0 μm by plating.

A heat sink member 8 is attached to the bottom surface of the insulating base 1, and the heat sink member 8 absorbs heat generated by the semiconductor integrated circuit element 4 and discharges it to the atmosphere to release the heat to the semiconductor integrated circuit element 4. Effectively prevents the semiconductor integrated circuit element 4 from becoming high temperature, and operates to always operate the semiconductor integrated circuit element 4 normally and stably.

The heat sink member 8 is made of a metal such as Kovar metal or 42 alloy, and is brazed to a metallized metal layer 9 previously adhered to the bottom surface of the insulating base 1 via a brazing material such as silver brazing. Thereby, it is attached to the bottom surface of the insulating base 1.

The metallized metal layer 9 previously adhered to the bottom surface of the insulating substrate 1 is made of a high melting point metal powder such as tungtethene or molybdenum. The metal paste thus obtained is printed and applied on the bottom surface of the insulating substrate 1 by well-known screen printing, and is baked at a high temperature to be adhered to the bottom surface of the insulating substrate 1.

A metal frame 10 is attached to the insulating base 1 via a metallized metal layer 11 around the recess B. A metal lid 3 is attached to the metal frame 10 by a seam welding method. The container 3 is hermetically sealed by welding.

The metal frame 10 is made of a metal such as Kovar metal or 42 alloy, and acts as a base metal member when attaching the metal cover 2 to the insulating base 1.
An insulating substrate is formed by brazing a metallized metal layer 11 previously deposited on the periphery with a brazing material such as silver brazing.
It is attached around the recess B of No. 1.

The metallized metal layer 11 is made of a metal powder having a high melting point such as tungsten or molybdenum. The area around B is printed and applied by a conventionally known screen printing method, and is baked at a high temperature to be attached around the concave section B of the insulating base 1.

Thus, according to the package for accommodating the semiconductor device of the present invention, the semiconductor integrated circuit device 4 is attached to the bottom surface of the concave portion B of the insulating base 1 via an adhesive, and each electrode of the semiconductor integrated circuit device 4 is metallized wiring layer 5. To the insulating substrate 1 via a bonding wire 6 and then the insulating substrate 1
The metal lid 2 is welded to the metal frame 10 attached to the periphery of the concave portion B by a seam welding method, and the inside of the container 3 is hermetically sealed to obtain a semiconductor device as a final product.

The metal lid 2 is welded to the metal frame 10 by placing the metal lid 2 on the metal frame 10 and attaching a seam welder to the outer periphery of the metal lid 2. This is performed by applying a high current of about 150 A while sliding the roller electrodes in contact with each other to instantaneously melt the joints of the metal lid 2 and the metal frame 10. In this case, an external lead pin 7 is provided in a region on an extension of each side of the rectangular recess B of the insulating base 1.
Is not present, the sliding contact of the roller electrode of the seam welding device is free, and as a result, the metal lid 2 can be accurately and reliably welded to the metal frame 10, and the container 3
The reliability of the hermetic seal inside can be made extremely high.

[0027]

According to the semiconductor device housing package of the present invention, external lead pins for connecting the semiconductor integrated circuit device to an external electric circuit are provided on the extension of each side of the rectangular recess accommodating the semiconductor integrated circuit device. When the metal lid is welded to the insulating substrate by the seam welding method and the inside of the container is airtightly sealed, the sliding contact of the roller electrode of the seam welding device becomes free, As a result, the metal lid can be accurately and reliably welded and attached to the insulating base, and thereby, the reliability of hermetic sealing of the container can be made extremely high. Therefore, according to the semiconductor device housing package of the present invention, the semiconductor integrated circuit device housed therein can always operate normally and stably for a long period of time.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an embodiment of a package for housing a semiconductor device according to the present invention;

FIG. 2 is a plan view of an insulating base of the package shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Metal lid 3 ... Container 7 ... External lead terminal 8 ... Heat sink member 10 ... Metal frame B ... Rectangular recess

Claims (1)

(57) [Scope of request for utility model registration] 1. A package for housing a semiconductor element, comprising a rectangular recess for accommodating a semiconductor element on one surface of an insulating base and an external lead pin for connecting the semiconductor element to an external electric circuit. Wherein the external lead terminal is attached to the surface of the insulating base except for the region on the extension of each side of the rectangular recess.