JPH0713229Y2 - Package for storing semiconductor devices - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to an improvement of a semiconductor element housing package for housing a semiconductor element.

(Prior Art) Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as alumina ceramics as shown in FIGS. Molybdenum (Mo), Manganese (M
n), an insulating substrate 11 having a metallized metal layer 12 made of a refractory metal powder such as tungsten (W), and Kovar brazed to the metallized metal layer 12 for electrically connecting a semiconductor element to an external circuit. (Fe-Ni-Co alloy) or 42
External lead terminal 13 and lid made of Alloy (Fe-Ni alloy)
The semiconductor element 15 is housed in an insulating container composed of the insulating base 11 and the lid 14, and the container is hermetically sealed to form a semiconductor device.

However, recently, the density and integration of semiconductor elements have rapidly increased, and the package for accommodating the semiconductor elements has become smaller and has a large number of external lead terminals. . Therefore, this semiconductor element storage package has a thin line width of external lead terminals, a thin thickness,
Furthermore, the interval between adjacent external lead terminals is extremely narrow. For example, when a semiconductor element is housed inside and then connected to an external circuit, when an external force is applied to the external lead terminal, The external lead terminals are easily and greatly deformed, and as a result, a short circuit due to contact occurs between the adjacent external lead terminals, which impairs the function of the semiconductor device.

Therefore, in order to solve the above-mentioned drawbacks, the applicant of the present application first connected the external lead terminals protruding from the insulating container with a square annular connecting member made of an electrically insulating material such as ceramic or glass, and connected the adjacent external lead terminals. We proposed a package for accommodating semiconductor devices, which can maintain a space between them by a connecting member and can effectively prevent a large deformation of an external lead terminal due to application of an external force.

However, in this semiconductor element housing package, all of the external lead terminals are connected by a square annular connecting member, the external lead terminals and the connecting members are made of different materials and have different thermal expansion coefficients, and the external force leads. Since the line width of the terminal is thin and the joint area between the external lead terminal and the insulating container and the connecting member is small, there are the following drawbacks.

That is, when heat is applied to the external lead terminal and the connecting member when the semiconductor element is housed inside the semiconductor element housing package or when the semiconductor element housed inside is actuated, the external lead terminal normally operates. , Kovar (Fe
-Ni-Co alloy) or 42Alloy (Fe-Ni alloy) and has a coefficient of thermal expansion of 11.5 to 13.0 × 10 ^-6 / ° C, while the connecting member is made of ceramic (for example, alumina ceramic),
Since the coefficient of thermal expansion is 6.0 to 7.5 × 10 ^-6 / ° C, the external lead terminal expands more than the connecting member, and as a result, the joint between the external lead terminal and the insulating container or the external lead terminal and the connecting member. A stress due to a difference in thermal expansion amount is generated at the joint portion with, and the external lead terminal is peeled off from the insulating container due to the stress, and the function as a semiconductor device is lost,
This caused a large deformation of the external lead terminals, causing a short circuit between adjacent external lead terminals.

(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and an object thereof is to apply heat to an external lead terminal and a connecting member connecting the external lead terminal when the semiconductor element is operated. Even if the external lead terminal and the insulating container and the connecting member are not stressed due to the difference in thermal expansion amount between them, the external lead terminal that loses its function as a semiconductor device is completely eliminated. It is an object of the present invention to provide a semiconductor element housing package capable of effectively preventing a short circuit between external lead terminals due to peeling or deformation and operating a semiconductor element housed therein normally and stably for a long period of time.

(Means for Solving the Problems) The present invention relates to a package for storing a semiconductor device in which a plurality of external lead terminals are projected from each side of a rectangular insulating container, and an external lead protruding from each side of the insulating container. The terminal is connected to each side by an electrically insulating connecting member, and each connecting member is connected to a metal member having a thermal expansion coefficient substantially the same as that of the external lead terminal.

(Embodiment) Next, the present invention will be described in detail based on an embodiment shown in FIGS. 1 and 2.

1 and 2 show an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is a rectangular insulating base made of an electrically insulating material, and 2 is a lid made of the same electrically insulating material. The insulating base 1 and the lid 2 constitute an insulating container 3 for housing a semiconductor element.

The insulating substrate 1 is made of, for example, alumina ceramics, and an alumina ceramic powder is mixed with an appropriate organic solvent and a solvent to form a slurry, and a green sheet (green sheet) is formed by adopting a doctor blade method. After being formed, the green sheet is appropriately punched, and a plurality of layers are laminated and fired at a high temperature.

Further, the insulating substrate 1 has a recess formed in the center of the upper surface thereof to form a space for accommodating a semiconductor element, and the semiconductor element 4 is attached to the bottom surface of the recess with an adhesive.

A metallized metal layer 5 is formed from the periphery of the recess to the outer peripheral edge of the insulating substrate 1, and the electrode of the semiconductor element 4 is electrically connected to the periphery of the recess of the metallized metal layer 5 via a bonding wire 6. Metallized metal layer 5
A large number of external lead terminals 7 connected to an external circuit are brazed to the outer peripheral end of the via a tow material such as silver solder so that one end thereof protrudes from each side of the insulating substrate 1.

The metallized metal layer 5 provided on the insulating substrate 1 is made of a refractory metal powder such as tungsten (W), molybdenum (Mo) manganese (Mn), and the like. The formed metal paste is deposited and formed on the upper surface of the insulating substrate 1 by employing a conventionally known thick film technique such as screen printing.

The external lead terminal 7 brazed to the outer peripheral edge of the upper surface of the insulating substrate 1 serves to connect the semiconductor element 4 housed therein to an external circuit, and electrically connects the external lead terminal 7 to the external circuit. As a result, the semiconductor element 4 housed inside is connected to the external circuit through the metallized metal layer 5 and the external lead terminal 7.

The external lead terminals 7 are Kovar (Fe-Ni-Co alloy)
, 42 Alloy (Fe-Ni alloy) or the like, and is formed into a plate shape by a conventionally known metal processing method.

Also, nickel (Ni) is formed on the outer surface of the external lead terminal 7 in order to improve the electrical connection between the external lead terminal 7 and an external circuit and to prevent the external lead terminal 7 from being oxidized and corroded. A metal, such as gold (Au), having good conductivity and excellent corrosion resistance is invaded by a well-known plating method.

Thus, according to this semiconductor element housing package, the semiconductor element 4 is attached and fixed to the bottom surface of the concave portion of the insulating substrate 1 via an adhesive such as glass, resin, or brazing material, and each electrode of the semiconductor element 4 is bonded by a bonding wire. After the external lead terminal 7 is connected to the metallized metal layer 5 brazed by 6, the insulating substrate 1 and the lid 2 are attached by a sealing member such as a resin to hermetically seal the semiconductor element 4 therein. Then, a semiconductor device is obtained.

In the present invention, the external lead terminals projecting from each side of the rectangular insulating container in the package for storing a semiconductor device as described above are connected to each side by an electrically insulating connecting member, and the connecting members are connected to each other. It is important to connect the external lead terminal with a metal member having substantially the same thermal expansion coefficient. Therefore, for example, in the embodiment shown in FIG. 1, the external lead terminals 7 protruding from the respective sides of the rectangular insulating substrate 1 are respectively
Each side is connected by a connecting member 8a, 8b, 8c, 8d made of an electrically insulating material, and each of the connecting members 8a, 8b, 8c, 8d has a coefficient of thermal expansion substantially equal to that of the external lead terminal 7. Same metal material
It is connected by 9a, 9b, 9c and 9d.

In this way, when the external lead terminals 7 are connected through the connecting members 8a, 8b, 8c, 8d, the external lead terminals 7 are connected to the continuous members 8a, 8b,
Adjacent terminals 7 are arranged and fixed by 8c and 8d while maintaining a predetermined space therebetween, and even if external force is applied to the external lead terminals 7 when connecting to an external circuit, each adjacent terminal is There is no contact short circuit due to deformation.

At the same time, since the connecting members 8a, 8b, 8c, 8d are made of an electrically insulating material, the connecting members 8a, 8b, 8c, 8d
There is no short circuit between the external lead terminals 7 due to d.

Furthermore, each connecting member 8a, 8 connecting the external lead terminal 7
b, 8c, 8d are connected by the metal members 9a, 9b, 9c, 9d whose thermal expansion coefficient is substantially the same as that of the external lead terminal 7, so when the semiconductor element housed inside the package is operated, Even if heat is applied to the external lead terminals 7 and the connecting members 8a, 8b, 8c, 8d, the connecting members 8a, 8b, 8c, 8d will be
The thermal expansion of a, 9b, 9c, 9d causes the external lead terminals 7 to move outward by the same amount as the thermal expansion of the external lead terminals 7, and as a result, the external lead terminals 7 and the insulating container 3 (accurately, the insulating substrate in this embodiment). 1) and the connecting members 8a, 8b, 8c, 8d do not generate any stress due to the difference in thermal expansion amount between them,
The external lead terminals 7 are never peeled off from the insulating container 3 or the external lead terminals 7 are not significantly deformed.

Furthermore, when the external lead terminals 7 are bent along the side surface of the insulating substrate 1, when the connecting members 8a, 8b, 8c, 8d are bent, the external lead terminals 7 are all at the same angle and at the same position. You can also do it.

The connecting members 8a, 8b, 8c, 8d are made of, for example, alumina ceramics, and are manufactured by the same method as that of the insulating base 1 described above, and the external lead terminals 7 are fixed to the upper surface by brazing. A metal layer 10 is formed. The metallized metal layer 10 has an interval substantially the same as the interval of the metallized metal layer 5 to which one end of the external lead terminal 7 formed on the insulating substrate 1 is brazed.

Also, metal members 9a, 9 for connecting the connecting members 8a, 8b, 8c, 8d.
The b, 9c, and 9d are made of a metal material whose coefficient of thermal expansion is substantially the same as that of the external lead terminal 7, and usually the same material as the external lead terminal 7 is used.

Still further, the reference holes 11a, 11b, 11c, 1 are formed in the metal members 9a, 9b, 9c, 9d.
If 1d is provided, the connection work between the external lead terminal 7 and the electrical inspection device at the time of checking the characteristics of the semiconductor element housed inside the package by utilizing the reference holes 11a, 11b, 11c, 11d Becomes extremely easy. Therefore, the metal members 9a, 9b, 9c, and 9d have reference holes 11a, 11b, 11c, and 11a, 11b, and 11c for facilitating connection work between the external lead terminal 7 and the electrical inspection device.
It is desirable to have 11d.

As described above, according to the semiconductor device housing package of the present invention, the external lead terminals protruding from each side of the rectangular insulating container are connected to each side by an electrically insulating connecting member, Moreover, since each connecting member is connected to the external lead terminal by a metal member having substantially the same coefficient of thermal expansion, each external lead terminal can maintain a predetermined interval between adjacent terminals, and the external lead terminal can be maintained. Even if an external force is applied to the terminals, the adjacent terminals deform and come into contact with each other due to the force, so that a short circuit is not caused and the function of the semiconductor device is not impaired.

Further, even when heat is applied to the external lead terminals and the connecting member when the semiconductor element housed inside the package is actuated, it moves in response to the thermal expansion of the external lead terminals from the connecting member, and as a result, external No stress is generated between the lead terminal and the insulating container or the connecting member due to the difference in thermal expansion between the lead terminal, the insulating container and the connecting member, and the external lead terminal is peeled off from the insulating container or the external lead terminal is greatly deformed due to the stress. , There is no short circuit between adjacent external lead terminals.

Therefore, the semiconductor device housing package of the present invention is capable of operating the semiconductor device housed therein normally and stably for a long period of time, which is extremely useful.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device housing package according to the present invention, FIG. 2 is a perspective view of an insulating base of the package shown in FIG. 1, and FIG. 3 is a conventional semiconductor device housing package. FIG. 4 is a plan view of the insulating base of the package of FIG. 1: Insulating substrate, 2: Lid 3: Insulating container, 7: External lead terminals 8a, 8b, 8c, 8d: Connecting member 9a, 9b, 9c, 9d: Metal member

Claims (1)

[Scope of utility model registration request] 1. A package for storing a semiconductor element, comprising a plurality of external lead terminals projecting from each side of a rectangular insulating container, wherein external lead terminals projecting from each side of the insulating container are provided for each side. A package for accommodating a semiconductor element, characterized in that they are connected by an electrically insulating connecting member, and each connecting member is connected by a metal member having a thermal expansion coefficient substantially the same as that of the external lead terminal.