JP2514901Y2 - Package for storing semiconductor devices - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an improvement in a semiconductor device housing package for housing a semiconductor device, particularly a semiconductor integrated circuit device.

(Prior Art and its Problems) Conventionally, as shown in FIGS. 3 and 4, a semiconductor element housing package for housing a semiconductor element is made of an electrically insulating material such as an aluminum oxide sintered body and has a top surface. An insulating substrate 11 having a recess 11a for accommodating the semiconductor element 15 and a metallized metal layer 12 made of a refractory metal powder of tungsten, molybdenum, manganese or the like led out from the periphery of the recess 11a to the outer peripheral edge, and the semiconductor element 15 are provided. The metallized metal layer 12 for electrically connecting to an external electrical circuit.
External lead terminal 13 attached to the base via a brazing material such as silver brazing
And the lid body 14, and the recess 11a of the insulating base 11 is formed.
The semiconductor element 15 is attached and fixed to the bottom surface through a brazing material such as gold-silicon eutectic solder, and each electrode of the semiconductor element 15 is electrically connected to the metallized metal layer 12 by the bonding wire 16 and the insulating substrate 11 is formed. The lid 14 is bonded to the upper surface via a sealing material such as glass or resin, and the recess 11a of the insulating base 11 is formed.
A semiconductor device is obtained by hermetically sealing the semiconductor element 15 therein.

However, recently, the density and integration of semiconductor elements have rapidly increased, and the package for accommodating the semiconductor elements has become smaller and has a large number of external lead terminals. . Therefore, in this package for accommodating semiconductor elements, the line width of the external lead terminals is thin, the thickness is thin, and the distance between the adjacent external lead terminals is extremely narrow. For example, after accommodating the semiconductor elements inside When connecting to an external electric circuit, if an external force is applied to the external lead terminal, the external lead terminal easily and largely deforms due to the external force, and as a result, a short circuit due to contact occurs between adjacent external lead terminals. Then, there is a drawback that the function as a semiconductor device is hindered.

Therefore, in order to eliminate the above-mentioned drawbacks, the applicant of the present invention previously bonded each of the external lead terminals protruding from the insulating container onto the insulating frame body made of ceramics through a glass member,
We have proposed a package for accommodating semiconductor devices, which can maintain a space between adjacent external lead terminals with an insulating frame and can effectively prevent a large deformation of the external lead terminals due to application of an external force.

However, in this semiconductor element housing package, a glass member for adhering each of the external lead terminals to the insulating frame is usually 70.0 to 90.0% by weight of lead oxide and 10.0 to 10% of boron oxide.
Lead borosilicate glass composed of 15.0% by weight, silicon oxide 0.5 to 3.0% by weight, and aluminum oxide 0.5 to 3.0% by weight is used. Since the lead borosilicate glass is inferior in chemical resistance, external lead terminals are used. When nickel or gold with excellent corrosion resistance is layered on the outer surface of the plate by plating, the glass member melts when the plating solution comes into contact with the glass member,
As a result, there is a drawback that the external lead terminals come off the insulating frame, and the external lead terminals are deformed or short-circuited.

Further, the glass member made of the lead borosilicate glass has a bonding temperature at the time of bonding the external lead terminals to the insulating frame.
Since the temperature is as low as 450 ° C., when the semiconductor element is attached to the bottom surface of the concave portion of the insulating substrate through the brazing material, when heat for heating and melting the brazing material is applied to the glass member, the glass member is softened by the heat, As a result, the bonding position of the external lead terminal is displaced, and the external lead terminal is accurately connected to a predetermined external electric circuit.
In addition, it has a drawback that it cannot be reliably electrically connected.

(Object of the Invention) The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to make the bonding temperature of the glass member for bonding the external lead terminal to the insulating frame high and to have excellent chemical resistance. None, enables the external lead terminals to be firmly adhered to the prescribed position of the insulating frame, effectively prevents deformation of the external lead terminals and short circuits between the external lead terminals, and accurately connects the external lead terminals to the prescribed external electrical circuit. It is another object of the present invention to provide a package for accommodating a semiconductor element that can be reliably electrically connected.

(Means for Solving the Problems) The present invention provides a package for storing a semiconductor device, which comprises a plurality of external lead terminals protruding from a side of an insulating container.
Each of the external lead terminals protruding from the side of the insulating container is silicon oxide 65.0 to 80.0 wt%, boron oxide 10.0 to 25.0 wt%, aluminum oxide 1.0 to 10.0 wt%,
It is characterized in that it is adhered to an insulating frame through a glass member composed of 1.0 to 10.0% by weight of an oxide of sodium or potassium.

(Embodiment) Next, the present invention will be described in detail based on an embodiment shown in FIGS.

1 to 3 show an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is a rectangular insulating base made of an electrically insulating material, and 2 is a lid made of the same electrically insulating material. The insulating base 1 and the lid 2 constitute an insulating container 3 for housing the semiconductor element 4.

The insulating substrate 1 is made of alumina ceramics, for example, and an organic solvent suitable for alumina ceramics powder,
A ceramic green sheet (ceramic green sheet) is formed by adding and mixing a solvent to form a sludge and adopting the doctor blade method.
The ceramic green sheet is manufactured by subjecting the ceramic green sheet to an appropriate punching process, laminating a plurality of sheets, and firing at a high temperature.

The insulating substrate 1 has a semiconductor element 4
Is provided with a recess forming a space for housing the semiconductor element 4, and the semiconductor element 4 is attached to the bottom surface of the recess with an adhesive.

A metallized metal layer 5 is formed from the periphery of the recess to the outer peripheral edge of the insulating substrate 1, and the electrode of the semiconductor element 4 is electrically connected to the periphery of the recess of the metallized metal layer 5 via a bonding wire 6. A large number of external lead terminals 7 connected to an external electric circuit are brazed to the outer peripheral edge of the metallized metal layer 5 with brazing material such as silver brazing so that one end thereof protrudes from each side of the insulating substrate 1. Has been done.

The metallized metal layer 5 provided on the insulating substrate 1 is made of a refractory metal powder such as tungsten, molybdenum, or manganese, and a metal paste made by adding and mixing an appropriate organic solvent and a solvent to the refractory metal powder is conventionally well known. Insulating substrate 1 by adopting thick film technique such as screen printing method
Is formed on the upper surface of.

The external lead terminal 7 brazed to the outer peripheral edge of the upper surface of the insulating substrate 1 serves to connect the semiconductor element 4 housed therein to an external electric circuit, and electrically connects the external lead terminal 7 to the external electric circuit. By connecting, the semiconductor element 4 housed inside is connected to the external electric circuit through the metallized metal layer 5 and the external lead terminal 7.

The external lead terminals 7 are made of metal such as Kovar or 42 Alloy and are formed in a plate shape by a conventionally known metal processing method.

The outer surface of the external lead terminal 7 is made of nickel or gold in order to improve the electrical connection between the external lead terminal 7 and an external electric circuit and to prevent the external lead terminal 7 from being oxidized and corroded. A metal having good conductivity and excellent corrosion resistance, which is composed of, for example, is deposited by a conventionally known plating method.

Each of the external lead terminals 7 is bonded to the insulating frame body 8 made of alumina ceramics or glass via a glass member 9 at a portion protruding from the side of each insulating base body 1, and each external lead terminal 7 is insulated by an insulating frame. The terminals 8 adjacent to each other are arranged and fixed by the body 8 while maintaining a predetermined gap therebetween, and even if an external force is applied to the external lead terminals 7, the adjacent external lead terminals 7 cause a contact short circuit due to deformation. There is no such thing.

At the same time, since the insulating frame 8 is made of an electrically insulating material, the insulating frame 8 does not cause a short circuit between the external lead terminals 7.

The glass member 9 for adhering the external lead terminals 7 to the insulating frame 8 is made of silicon oxide 65.0 to 80.0% by weight and boron oxide.
10.0 to 25.0% by weight, aluminum oxide 1.0 to 10.0% by weight, sodium or potassium oxide 1.0 to 10.
The external lead terminal is made of 0% by weight, and the glass preform is sandwiched between the external lead terminal 7 and the insulating frame 8 and heated to a temperature of about 700 ° C. while applying a pressure of about 5 g / cm ^2. 7 is adhered to a predetermined position of the insulating frame body 8.

Since the glass member 9 is made of glass containing silicon oxide as a main component, it has excellent chemical resistance, and even if the plating liquid comes into contact with the glass member 9, the glass member 9 does not dissolve at all, and as a result, The external lead terminal 7 can be always bonded to a predetermined position of the insulating frame body 8 via the glass member 9.

Further, the glass member 9 has a high bonding temperature of about 700 ° C. when the external lead terminals 7 are bonded to the insulating frame body 8. Therefore, the semiconductor element 4 is mounted on the glass member 9 in the recess 1a of the insulating substrate 1.
Even if heat is applied to heat and melt the brazing material when attaching it to the bottom surface via the brazing material, it does not soften at all,
As a result, it is possible to prevent the displacement of the bonding position of the external lead terminal 7 from occurring, and to accurately and reliably electrically connect the external lead terminal 7 to a predetermined external electric circuit.

When the amount of silicon oxide constituting the glass member 9 is less than 65.0% by weight, the bonding temperature of the glass member 9 when the external lead terminal 7 is bonded to the insulating frame 8 is lowered, and the external lead terminal is reduced. 7 cannot be bonded to the insulating frame 8 at all times, and when it exceeds 80.0% by weight, the bonding temperature of the glass member 9 becomes extremely high, and when the external lead terminal 7 is bonded to the insulating frame 8, The brazing material brazing the external lead terminals 7 to the metallized metal layer 5 melts,
The external lead terminal 7 comes off from the metallized metal layer 5. Therefore, the amount of silicon oxide is specified in the range of 65.0 to 80.0% by weight.

Further, if the amount of boron oxide is less than 10.0% by weight, the chemical resistance of the glass member 9 deteriorates, and when the plating solution or the like comes into contact, it dissolves and the external lead terminals 7 are always adhered to the insulating frame body 8. When it exceeds 25.0% by weight, the bonding temperature of the glass member 9 when the external lead terminals 7 are bonded to the insulating frame 8 becomes extremely high, and when the external lead terminals 7 are bonded to the insulating frame 8, The brazing material brazing the lead terminals 7 to the metallized metal layer 5 melts, and the external lead terminals 7 come off the metallized metal layer 5. Therefore, the amount of barium oxide is specified in the range of 10.0 to 25.0% by weight.

Further, when the amount of aluminum oxide is less than 1.0% by weight, the bonding temperature of the glass member 9 at the time of bonding the external lead terminal 7 to the insulating frame body 8 becomes low and the external lead terminal 7 is always bonded to the insulating frame body 8. If it exceeds 10.0% by weight, the adhesion temperature of the glass member 9 becomes extremely high, and when the external lead terminal 7 is adhered to the insulating frame body 8, the external lead terminal 7 is adhered to the metallized metal layer 5. The brazing material brazed to is melted, and the external lead terminals 7 are separated from the metallized metal layer 5. Therefore, the amount of silicon oxide is specified in the range of 1.0 to 10.0% by weight.

Further, if the amount of sodium or potassium oxide is less than 1.0% by weight, the bonding temperature of the glass member 9 at the time of bonding the external lead terminal 7 to the insulating frame body 8 becomes extremely high, and the insulating lead body 8 has external lead wires. When the terminals 7 are bonded, the brazing material brazing the external lead terminals 7 to the metallized metal layer 5 melts, the external lead terminals 7 come off the metallized metal layer 5, and when the content exceeds 10.0% by weight, the glass The chemical resistance of the member 9 is deteriorated, and when the plating solution or the like comes into contact with the member 9 and dissolves, the external lead terminal 7 cannot be always adhered to the insulating frame 8. Therefore, the amount of sodium or potassium oxide is specified in the range of 1.0 to 10.0% by weight.

Thus, according to this semiconductor element accommodating package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1 via a brazing material such as gold-silicon eutectic solder, and each electrode of the semiconductor element 4 is bonded with the bonding wire 6 After connecting the external lead terminal 7 to the brazed metallized metal layer 5 by attaching the insulating base 1 and the lid 2 with a sealing member such as resin, the semiconductor element 4 is hermetically sealed inside. To be a semiconductor device.

(Effect of the Invention) As described above, according to the package for housing a semiconductor device of the present invention, each of the external lead terminals protruding from the side of the insulating container has 65.0 to 80.0% by weight of silicon oxide and 1% of boron oxide.
0.0 to 25.0% by weight, aluminum oxide 1.0 to 10.0% by weight, sodium or potassium oxide 1.0 to 10.0
Since it is adhered to the insulating frame through the glass member consisting of wt%, when the plating metal layer is laminated on the external lead terminal, the glass member is dissolved even if the plating liquid comes into contact with the external lead terminal. Does not come off from the insulating frame, and when the semiconductor element is attached to the bottom surface of the recess of the insulating substrate via the brazing material, the glass member softens even if heat for melting the brazing material is applied to the glass member. There is no deviation in the bonding position of the external lead terminals, and as a result, the external lead terminals should always be firmly bonded with a fixed gap between the external lead terminals and the external lead terminals adjacent to the specified position of the insulating frame. Even if an external force is applied to the external lead terminals, the adjacent terminals are deformed and contacted by the external force, causing a short circuit, which impairs the function of the semiconductor device. No.

Therefore, the semiconductor device housing package of the present invention enables the semiconductor device to be housed inside to be accurately and reliably electrically connected to a predetermined external electric circuit so that the semiconductor device can always operate normally for a long period of time. Becomes

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of a package for housing a semiconductor device according to the present invention, FIG. 2 is a perspective view of an insulating base of the package shown in FIG. 1, and FIG. 3 is a package showing the package shown in FIG. FIG. 4 is a partial enlarged cross-sectional view for explaining the connection state of the external lead terminals and the insulating frame, FIG. 4 is a cross-sectional view of a conventional semiconductor device housing package, and FIG. 5 is a plan view of an insulating base of the package of FIG. Is. 1: Insulating substrate, 2: Lid 3: Insulating container, 7: External lead terminal 8: Insulating frame, 9: Glass member

Claims (1)

(57) [Scope of utility model registration request] 1. A package for storing a semiconductor element, comprising a plurality of external lead terminals protruding from the side of an insulating container, wherein each of the external lead terminals protruding from the side of the insulating container is 65.0 to 80.0% by weight of silicon oxide. , Boron oxide 1
0.0 to 25.0% by weight, aluminum oxide 1.0 to 10.0% by weight, sodium or potassium oxide 1.0 to 10.0
A package for accommodating a semiconductor element, characterized in that it is adhered to an insulating frame through a glass member composed of wt%.