JPH1174392A - Package for housing electronic component - Google Patents

Package for housing electronic component

Info

Publication number
JPH1174392A
JPH1174392A JP9233137A JP23313797A JPH1174392A JP H1174392 A JPH1174392 A JP H1174392A JP 9233137 A JP9233137 A JP 9233137A JP 23313797 A JP23313797 A JP 23313797A JP H1174392 A JPH1174392 A JP H1174392A
Authority
JP
Japan
Prior art keywords
frame
metal
base
electronic component
brazing material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9233137A
Other languages
Japanese (ja)
Inventor
Harumi Takeoka
治己 竹岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP9233137A priority Critical patent/JPH1174392A/en
Publication of JPH1174392A publication Critical patent/JPH1174392A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a package for housing an electronic component capable of completely airtightly sealing a container and normally and stably operating the electronic component housed inside the container over the long period of time. SOLUTION: This package is composed of a base body 1 provided with a frame part 2 on an upper surface outer peripheral part, a frame-like metallization metal layer 7 mounted to the upper surface of the frame part 2, a metal frame body 8 attached through a brazing filler metal 9 to the metallization metal layer 7 and a metallic cover body 3 welded to the metal frame body 8 and the electronic component 4 is airtightly housed inside. In this case, the Vickers hardness(Hv) of the brazing filler metal 9 is Hv<=70.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体素子や水晶振
動子、弾性表面波素子等の電子部品を収容するための電
子部品収納用パッケージに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating electronic components such as a semiconductor device, a quartz oscillator, and a surface acoustic wave device.

【0002】[0002]

【従来の技術】従来、半導体素子や水晶振動子、弾性表
面波素子等の電子部品を収容するための電子部品収納用
パッケージは、一般に酸化アルミニウム質焼結体等の電
気絶縁材料から成り、上面外周部に枠部を有する基体
と、該基体の枠部内側から外側にかけて導出するタング
ステン、モリブデン、マンガン等の高融点金属粉末から
成るメタライズ配線層と、基体の枠部上面に取着され、
鉄ーニッケルーコバルト合金や鉄ーニッケル合金等から
成る金属製蓋体とから構成されており、基体の枠部内側
に半導体素子や水晶振動子等の電子部品を収容するとと
もに該電子部品の各電極をボンディングワイヤを介して
所定のメタライズ配線層に接続し、しかる後、基体の枠
部上面に金属製蓋体を溶接し、基体と金属製蓋体とから
成る容器内部に電子部品を気密に封止することによって
最終製品としての電子装置となる。
2. Description of the Related Art Conventionally, electronic component housing packages for housing electronic components such as semiconductor elements, quartz oscillators, surface acoustic wave elements, etc. are generally made of an electrically insulating material such as an aluminum oxide sintered body. A base having a frame portion on the outer periphery, a metallized wiring layer made of a high melting point metal powder such as tungsten, molybdenum, and manganese derived from the inside to the outside of the frame portion of the base, and attached to the top surface of the base frame;
A metal lid made of iron-nickel-cobalt alloy, iron-nickel alloy, or the like, and accommodates electronic components such as a semiconductor element and a quartz oscillator inside the frame of the base and each electrode of the electronic components. Is connected to a predetermined metallized wiring layer via a bonding wire. Thereafter, a metal lid is welded to the upper surface of the frame of the base, and the electronic components are hermetically sealed inside a container including the base and the metal lid. By stopping, it becomes an electronic device as a final product.

【0003】なお、前記従来の電子部品収納用パッケー
ジは通常、酸化アルミニウム質焼結体等から成る基体の
枠部上面に鉄ーニッケルーコバルト合金や鉄ーニッケル
合金等の金属材料から成る金属枠体を予め銀ロウ等のロ
ウ材を介して取着させておき、該金属枠体に金属製蓋体
をシームウエルド法等により溶接させることによって金
属製蓋体は基体の上面に取着され、これによって基体と
金属製蓋体とから成る容器の内部が気密に封止される。
[0003] The conventional package for housing electronic parts is usually formed of a metal frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy on the upper surface of a frame portion of a base made of an aluminum oxide sintered body or the like. Is previously attached via a brazing material such as silver brazing, and a metal lid is welded to the metal frame by a seam welding method or the like, so that the metal lid is attached to the upper surface of the base. Thereby, the inside of the container including the base and the metal lid is hermetically sealed.

【0004】また前記基体の枠部上面への金属枠体の取
着はまず基体の枠部上面に金属枠体より若干大きめの面
積にタングステン、モリブデン、マンガン等の高融点金
属粉末から成るメタライズ金属層を従来周知のスクリー
ン印刷法等の厚膜手法を採用することによって被着形成
しておき、次に前記メタライズ金属層上に銀ロウ等のロ
ウ材と金属枠体とを順次載置させ、最後に前記ロウ材に
約800℃の温度を印加し、ロウ材を加熱溶融させるこ
とによって行われる。
The metal frame is attached to the upper surface of the frame of the base by first forming a metallized metal made of a refractory metal powder such as tungsten, molybdenum, or manganese on the upper surface of the frame of the base in a slightly larger area than the metal frame. The layer is deposited and formed by adopting a conventionally known thick film technique such as a screen printing method, and then a brazing material such as silver brazing and a metal frame are sequentially placed on the metallized metal layer, Finally, a temperature of about 800 ° C. is applied to the brazing material, and the brazing material is heated and melted.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、近時、
電子機器はその小型化が急激に進み、該電子機器に実装
される電子装置、強いては電子部品収納用パッケージも
極めて小型のものが要求されるようになり、基体の上面
外周部に形成されている枠部の幅は0.4mm程度と薄
くなって枠部の機械的強度が弱いものになるとともに枠
部上面に被着されているメタライズ金属層の被着面積も
狭く、被着強度が極めて弱いものとなってきた。
However, recently,
The size of electronic devices has been rapidly reduced, and electronic devices mounted on the electronic devices and, at the very least, packages for storing electronic components have been required to be extremely small. The width of the frame part is as thin as about 0.4 mm, the mechanical strength of the frame part is weak, and the area of the metallized metal layer deposited on the top of the frame part is also small, and the adhesion strength is extremely low It has become weak.

【0006】そのためこの電子部品収納用パッケージに
おいて、基体の枠部内側に半導体素子や水晶振動子等の
電子部品を収容するとともに枠部上面にロウ材を介して
取着されている金属枠体に金属製蓋体を溶接により取着
し電子装置を製作する際、金属枠体のみが溶接時に大き
く熱膨張、熱収縮して基体の枠部と金属枠体との間に応
力が発生し、これがロウ材が固いことからそのままメタ
ライズ金属層の外側に集中作用してメタライズ金属層を
基体の枠部上面より剥離させたり、機械的強度の弱い枠
部、特に枠部の基部に作用して枠部にクラックや割れ等
を発生させたりして容器の気密封止が破れ、その結果、
容器の内部に収容する電子部品を長期間にわたり正常、
かつ安定に作動させることができないという欠点を有し
ていた。
[0006] Therefore, in this electronic component storage package, a metal frame body that accommodates electronic components such as a semiconductor element and a crystal oscillator inside the frame portion of the base and is attached to the upper surface of the frame portion via a brazing material. When manufacturing an electronic device by attaching a metal lid body by welding, only the metal frame body undergoes a large thermal expansion and thermal contraction during welding, and stress is generated between the frame portion of the base and the metal frame body. Since the brazing material is hard, the metallized metal layer concentrates on the outside of the metallized metal layer as it is to peel off the metallized metal layer from the upper surface of the frame portion of the base, or acts on the frame portion having low mechanical strength, particularly on the base portion of the frame portion, and Cracks or cracks, etc., and the hermetic sealing of the container is broken, and as a result,
The electronic components housed inside the container are normally
Further, it has a disadvantage that it cannot be operated stably.

【0007】本発明は容器の気密封止を完全とし、容器
の内部に収容される電子部品を長期間にわたり正常、か
つ安定に作動させることができる電子部品収納用パッケ
ージを提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide an electronic component housing package that can completely and hermetically seal a container and can operate electronic components housed inside the container normally and stably for a long period of time.

【0008】[0008]

【課題を解決するための手段】本発明は、上面外周部に
枠部を有する基体と、該枠部上面に被着された枠状のメ
タライズ金属層と、該メタライズ金属層にロウ材を介し
て取着された金属枠体と、該金属枠体に溶接される金属
製蓋体とから成り、内部に電子部品を気密に収容する電
子部品収納用パッケージであって、前記ロウ材のビッカ
ース硬度(Hv)がHv≦70であることを特徴とする
ものである。
According to the present invention, there is provided a base having a frame at the outer peripheral portion of the upper surface, a frame-shaped metallized metal layer adhered to the upper surface of the frame, and a brazing material interposed between the metallized metal layer. An electronic component storage package comprising a metal frame attached and a metal lid welded to the metal frame, wherein the electronic component is hermetically stored therein, wherein the Vickers hardness of the brazing material is (Hv) satisfies Hv ≦ 70.

【0009】また本発明は、前記ロウ材が銀、銀ーイン
ジウム、銀ーゲルマニウムの少なくとも1種からなるこ
とを特徴とするものである。
Further, the present invention is characterized in that the brazing material is made of at least one of silver, silver-indium, and silver-germanium.

【0010】本発明の電子部品収納用パッケージによれ
ば、基体の枠部上面に金属枠体を銀、銀ーインジウム、
銀ーゲルマニウム等から成るビッカース硬度(Hv)が
Hv≦70の軟質なロウ材を介してロウ付け取着したこ
とから金属枠体に金属製蓋体をシームウエルド法等によ
り溶接する際、金属枠体が大きく熱膨張、熱収縮し、基
体の枠部と金属枠体との間に大きな応力を発生したとし
てもその応力はロウ材を適度に変形させることによって
吸収され、その結果、基体の枠部にクラックや割れ等を
発生したり、メタライズ金属層が枠部より剥離したりす
ることは殆どなく、これによって基体と金属製蓋体とか
ら成る容器の気密封止の信頼性が極めて高いものとな
り、容器の内部に収容する電子部品を長期間にわたり正
常、かつ安定に作動させることが可能となる。
According to the electronic component housing package of the present invention, the metal frame is formed of silver, silver-indium,
When the metal lid is welded to the metal frame by a seam welding method or the like, the metal lid is brazed and attached via a soft brazing material made of silver-germanium or the like and having a Vickers hardness (Hv) of Hv ≦ 70. Even if the body undergoes a large thermal expansion and contraction, and a large stress is generated between the frame portion of the base and the metal frame, the stress is absorbed by appropriately deforming the brazing material. Cracks and cracks are not generated in the part, and the metallized metal layer hardly peels off from the frame part, so that the reliability of hermetic sealing of the container consisting of the base and the metal lid is extremely high Thus, the electronic components housed in the container can be operated normally and stably for a long period of time.

【0011】[0011]

【発明の実施の形態】次に本発明を添付図面に基づき詳
細に説明する。図1及び図2は本発明の電子部品収納用
パッケージを半導体素子を収容するパッケージに適用し
た場合の一実施例を示し、1は上面外周部に枠部2を有
する基体、3は金属製蓋体である。この枠部2を有する
基体1と金属製蓋体3とで内部に半導体素子4を収容す
るための容器が構成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIGS. 1 and 2 show an embodiment in which the electronic component housing package of the present invention is applied to a package housing a semiconductor element, wherein 1 is a base having a frame portion 2 on the outer peripheral portion of the upper surface, and 3 is a metal lid. Body. The base 1 having the frame portion 2 and the metal lid 3 constitute a container for accommodating the semiconductor element 4 therein.

【0012】前記上面外周部に枠部2を有する基体1は
酸化アルミニウム質焼結体やムライト質焼結体、窒化ア
ルミニウム質焼結体、炭化珪素質焼結体、ガラスセラミ
ックス焼結体から成り、その枠部2内側の基体1上面中
央部には半導体素子4が載置される載置部1aが設けて
あり、該載置部1aには半導体素子4がロウ材、ガラ
ス、樹脂等の接着剤を介して取着される。
The base 1 having a frame 2 at the outer peripheral portion of the upper surface is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, or a glass ceramic sintered body. A mounting portion 1a on which the semiconductor element 4 is mounted is provided at the center of the upper surface of the base 1 inside the frame portion 2, and the semiconductor element 4 is formed of a brazing material, glass, resin or the like on the mounting portion 1a. Attached via adhesive.

【0013】前記上面外周部に枠部2を有する基体1は
例えば、酸化アルミニウム質焼結体から成る場合、酸化
アルミニウム、酸化珪素、酸化マグネシウム、酸化カル
シウム等に適当な有機溶剤、溶媒を添加混合して泥漿状
となすとともにこれを従来周知のドクターブレード法や
カレンダーロール法を採用することによってグリーンシ
ート(生シート)を形成し、しかる後、前記グリーンシ
ートに適当な打ち抜き加工を施すとともに複数枚積層
し、高温(約1800℃)で焼成することによって製作
される。
When the base 1 having the frame 2 on the outer periphery of the upper surface is made of, for example, an aluminum oxide sintered body, a suitable organic solvent or solvent is added to aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, or the like. Then, a green sheet (raw sheet) is formed by employing a conventionally known doctor blade method or calender roll method, and then the green sheet is subjected to an appropriate punching process and a plurality of sheets are formed. It is manufactured by laminating and firing at a high temperature (about 1800 ° C.).

【0014】また前記基体1には枠部2の内側から基体
1の下面にかけて導出する複数個のメタライズ配線層5
が被着形成されており、該メタライズ配線層5の枠部2
内側には半導体素子4の電極がボンデイングワイヤ6を
介して電気的に接続され、また基体1の下面に導出した
部位は外部電気回路基板の配線導体(不図示)が半田等
を介して電気的に接続される。
The base 1 has a plurality of metallized wiring layers 5 extending from the inside of the frame 2 to the lower surface of the base 1.
Is formed, and the frame portion 2 of the metallized wiring layer 5 is formed.
The electrodes of the semiconductor element 4 are electrically connected to the inside through bonding wires 6, and the wiring conductor (not shown) of the external electric circuit board is electrically connected to the portion led out to the lower surface of the base 1 through solder or the like. Connected to.

【0015】前記基体1に設けた複数個のメタライズ配
線層5はタングステン、モリブデン、マンガン等の金属
粉末から成り、該メタライズ配線層5は半導体素子4の
各電極を所定の外部電気回路に電気的に接続する作用を
なす。
A plurality of metallized wiring layers 5 provided on the base 1 are made of a metal powder such as tungsten, molybdenum, manganese or the like. The metallized wiring layers 5 electrically connect each electrode of the semiconductor element 4 to a predetermined external electric circuit. Acts to connect to.

【0016】前記メタライズ配線層5は例えば、タング
ステン等の金属粉末に有機溶剤、溶媒を添加混合して得
た金属ペーストを基体1となるグリーンシートに予め従
来周知のスクリーン印刷法により所定パターンに印刷塗
布しておくことによって枠部枠部2内側から基体1の下
面にかけて所定パターンに被着導出される。
For example, the metallized wiring layer 5 is formed by printing a metal paste obtained by adding and mixing an organic solvent and a solvent to a metal powder such as tungsten on a green sheet serving as the substrate 1 in a predetermined pattern by a conventionally well-known screen printing method. By being applied, it is attached and derived in a predetermined pattern from the inside of the frame 2 to the lower surface of the base 1.

【0017】なお、前記メタライズ配線層5はその露出
する外表面にニッケル、金等の耐蝕性に優れ、且つロウ
材と濡れ性の良い金属をメッキ法によリ1.0乃至2
0.0μmの厚みに被着させておくとメタライズ配線層
5の酸化腐食を有効に防止することができるとともにメ
タライズ配線層5とボンデイングワイヤ6との接続及び
メタライズ配線層5と外部電気回路基板の配線導体との
接続を強固なものとなすことができる。従って、前記メ
タライズ配線層5の表面にはニッケル、金等の耐蝕性に
優れ、且つロウ材と濡れ性の良い金属をメッキ法により
1.0乃至20.0μmの厚みに被着させておくことが
好ましい。
The metallized wiring layer 5 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
If it is applied to a thickness of 0.0 μm, oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the metallized wiring layer 5 and the external electric circuit board The connection with the wiring conductor can be made strong. Therefore, a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material is applied to the surface of the metallized wiring layer 5 by a plating method to a thickness of 1.0 to 20.0 μm. Is preferred.

【0018】また前記基体1の枠部2上面にはメタライ
ズ金属層7が被着形成されており、該メタライズ金属層
7には金属枠体8がロウ材9を介してロウ付けされてい
る。
A metallized metal layer 7 is formed on the upper surface of the frame 2 of the base 1, and a metal frame 8 is brazed to the metallized metal layer 7 via a brazing material 9.

【0019】前記基体1の枠部2上面のメタライズ金属
層7はタングステン、モリブデン、マンガン等の高融点
金属粉末から成り、該メタライズ金属層7は金属枠体8
を基体1にロウ付けする際の下地金属層として作用す
る。
The metallized metal layer 7 on the upper surface of the frame portion 2 of the base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.
Acts as a base metal layer when brazing to the base 1.

【0020】前記メタライズ金属層7はタングステン等
の金属粉末に適当な有機溶剤、溶媒を添加混合して得た
金属ペーストを基体1と成るグリーンシート上に従来周
知のスクリーン印刷法等により予め所定厚み、所定パタ
ーンに印刷塗布しておくことによって基体1の枠部2上
面に枠状に被着形成される。
The metallized metal layer 7 is coated with a metal paste obtained by adding an appropriate organic solvent and a solvent to a metal powder such as tungsten on a green sheet serving as the substrate 1 in a predetermined thickness by a conventionally known screen printing method or the like. By printing and applying in a predetermined pattern, the substrate 1 is formed on the upper surface of the frame portion 2 in a frame shape.

【0021】なお、前記メタライズ金属層7はその露出
する外表面にニッケル、金等の耐蝕性に優れ、且つロウ
材と濡れ性の良い金属をメッキ法によリ1.0乃至2
0.0μmの厚みに被着させておくとメタライズ金属層
7の酸化腐食を有効に防止することができるとともにメ
タライズ金属層7と金属枠体8とのロウ付けを強固なも
のとなすことができる。従って、前記メタライズ金属層
7の表面にはニッケル、金等の耐蝕性に優れ、且つロウ
材と濡れ性の良い金属をメッキ法により1.0乃至2
0.0μmの厚みに被着させておくことが好ましい。
The metallized metal layer 7 is coated on its exposed outer surface with a metal having excellent corrosion resistance such as nickel and gold and a good wettability with a brazing material by a plating method.
When the metallized metal layer 7 is deposited to a thickness of 0.0 μm, oxidation corrosion of the metallized metal layer 7 can be effectively prevented, and the brazing between the metallized metal layer 7 and the metal frame 8 can be made firm. . Therefore, the surface of the metallized metal layer 7 is coated with a metal having excellent corrosion resistance, such as nickel and gold, and a good wettability with the brazing material by a plating method.
Preferably, it is applied to a thickness of 0.0 μm.

【0022】更に前記メタライズ金属層7にロウ材9を
介してロウ付けされる金属枠体8は鉄ーニッケルーコバ
ルト合金や鉄ーニッケル合金等の金属材料から成る金属
製蓋体2を基体1に取着する際の下地金属部材として作
用し、金属枠体8に金属製蓋体2をシームウエルド法等
により溶接することによって金属製蓋体2は基体1の枠
部2上に取着される。
Further, a metal frame 8 brazed to the metallized metal layer 7 via a brazing material 9 includes a metal lid 2 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy on the base 1. The metal cover 2 acts as a base metal member for attachment, and is welded to the metal frame 8 by a seam welding method or the like, so that the metal cover 2 is attached to the frame 2 of the base 1. .

【0023】前記金属枠体8は鉄ーニッケルーコバルト
合金や鉄ーニッケル合金等の金属材料から成り、該鉄ー
ニッケルーコバルト合金等のインゴット(塊)に圧延加
工法や打ち抜き加工法等、従来周知の金属加工法を施す
ことによって所定の枠状に形成される。
The metal frame 8 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. It is formed in a predetermined frame shape by applying a well-known metal working method.

【0024】前記金属枠体8はまた基体1の枠部2上面
に設けたメタライズ金属層7にロウ材9を介してロウ付
けされ、該ロウ材9としては例えば、銀、銀ーインジウ
ム、銀ーゲルマニウム等のビッカース硬度(Hv)がH
v≦70の金属材料により形成されている。
The metal frame 8 is brazed to a metallized metal layer 7 provided on the upper surface of the frame portion 2 of the base 1 via a brazing material 9, for example, silver, silver-indium, silver- Vickers hardness (Hv) of germanium etc. is H
It is formed of a metal material satisfying v ≦ 70.

【0025】前記銀、銀ーインジウム、銀ーゲルマニウ
ム等から成るロウ材9はそのビッカース硬度(Hv)が
Hv≦70であることから金属枠体8に金属製蓋体3を
シームウエルド法等により溶接する際、金属枠体8のみ
が大きく熱膨張、熱収縮し、基体1の枠部2と金属枠体
8との間に大きな応力を発生したとしてもその応力はロ
ウ材9を適度に変形させることによって吸収され、その
結果、基体1の枠部2にクラックや割れ等を発生した
り、メタライズ金属層7が枠部2より剥離したりするこ
とは殆どなく、これによって基体1と金属製蓋体3とか
ら成る容器の気密封止の信頼性が極めて高いものとな
り、容器の内部に収容する半導体素子4を長期間にわた
り正常、かつ安定に作動させることが可能となる。
Since the brazing material 9 made of silver, silver-indium, silver-germanium, or the like has a Vickers hardness (Hv) of Hv ≦ 70, the metal lid 3 is welded to the metal frame 8 by a seam welding method or the like. At this time, even if only the metal frame 8 undergoes a large thermal expansion and thermal contraction, and a large stress is generated between the frame 2 of the base 1 and the metal frame 8, the stress causes the brazing material 9 to be appropriately deformed. As a result, there is almost no occurrence of cracks or cracks in the frame portion 2 of the base 1, and the metallized metal layer 7 is hardly peeled off from the frame portion 2. The reliability of hermetic sealing of the container including the body 3 becomes extremely high, and the semiconductor element 4 housed in the container can be operated normally and stably for a long period of time.

【0026】なお、前記ロウ材9はそのビッカース硬度
(Hv)がHv>70となると金属枠体8に金属製蓋体
3をシームウエルド法等により溶接する際に基体1の枠
部2と金属枠体8との間に発生する大きな応力をロウ材
9で完全に吸収することができず、メタライズ金属層7
に剥離を発生したり、枠部2にクラック等が発生してし
まう。従って、前記ロウ材9はそのビッカース硬度(H
v)がHv≦70に特定される。
When the Vickers hardness (Hv) of the brazing material 9 is Hv> 70, the metal member 3 is welded to the metal frame 8 by a seam welding method or the like. The large stress generated between the metallized metal layer 7 and the frame 8 cannot be completely absorbed by the brazing material 9.
, Or cracks or the like occur in the frame portion 2. Therefore, the brazing material 9 has a Vickers hardness (H
v) is specified as Hv ≦ 70.

【0027】また前記ロウ材9を介しての金属枠体8と
メタライズ金属層7とのロウ付け取着は、メタライズ金
属層7上に予め所定の枠状に打ち抜き加工されたロウ材
9と金属枠体8とを順次載置させ、しかる後、これを約
850℃の温度に加熱し、ロウ材9を加熱溶融させるこ
とによって行われる。
The brazing of the metal frame 8 and the metallized metal layer 7 via the brazing material 9 is performed by using a brazing material 9 previously punched into a predetermined frame shape on the metallized metal layer 7 and a metal. This is performed by sequentially placing the frame members 8 and then heating the frame members 8 to a temperature of about 850 ° C. to heat and melt the brazing material 9.

【0028】かくして上述のパッケージによれば基体1
の枠部2内側に位置する載置部1aに半導体素子4をロ
ウ材、ガラス、樹脂等の接着剤を介して取着するととも
に該半導体素子4の各電極をボンデイングワイヤ6を介
してメタライズ配線層5に電気的に接続し、しかる後、
基体1の枠部2上面にロウ付けした金属枠体8に金属製
蓋体3をシームウエルド法等により溶接し、上面外周部
に枠部2を有する基体1と金属製蓋体3とから成る容器
内部に半導体素子4を気密に封止することによって最終
製品としての電子装置となる。
Thus, according to the above-described package, the base 1
The semiconductor element 4 is attached to the mounting portion 1a located inside the frame portion 2 via an adhesive such as brazing material, glass, resin, or the like, and each electrode of the semiconductor element 4 is metalized via a bonding wire 6. Electrically connect to layer 5 and then
The metal lid 3 is welded to the metal frame 8 brazed to the upper surface of the frame 2 of the base 1 by a seam welding method or the like, and is composed of the base 1 having the frame 2 on the outer periphery of the upper surface and the metal lid 3. An electronic device as a final product is obtained by hermetically sealing the semiconductor element 4 inside the container.

【0029】更に、本発明は上述したパッケージに限定
されるものではなく、本発明の要旨を逸脱しない範囲で
あれば種々の変更は可能であり、例えば、上述の実施例
では基体1の下面に導出するメタライズ配線層5を直
接、外部電気回路基板の配線導体に接続すると説明した
が、メタライズ配線層5に外部リード端子を予めロウ付
けしておき、該外部リード端子を外部電気回路に接続さ
せることによって容器の内部に収容される電子部品を外
部電気回路に接続されるようにしておいてもよい。
Further, the present invention is not limited to the above-mentioned package, and various modifications can be made without departing from the scope of the present invention. Although it has been described that the derived metallized wiring layer 5 is directly connected to the wiring conductor of the external electric circuit board, external lead terminals are previously brazed to the metallized wiring layer 5 and the external lead terminals are connected to the external electric circuit. Thereby, the electronic components housed inside the container may be connected to an external electric circuit.

【0030】[0030]

【発明の効果】本発明の電子部品収納用パッケージによ
れば、基体の枠部上面に金属枠体を銀、銀ーインジウ
ム、銀ーゲルマニウム等から成るビッカース硬度(H
v)がHv≦70の軟質なロウ材を介してロウ付け取着
したことから金属枠体に金属製蓋体をシームウエルド法
等により溶接する際、金属枠体が大きく熱膨張、熱収縮
し、基体の枠部と金属枠体との間に大きな応力を発生し
たとしてもその応力はロウ材を適度に変形させることに
よって吸収され、その結果、基体の枠部にクラックや割
れ等を発生したり、メタライズ金属層が枠部より剥離し
たりすることは殆どなく、これによって基体と金属製蓋
体とから成る容器の気密封止の信頼性が極めて高いもの
となり、容器の内部に収容する電子部品を長期間にわた
り正常、かつ安定に作動させることが可能となる。
According to the electronic component housing package of the present invention, the metal frame is formed on the upper surface of the frame portion of the base by a Vickers hardness (H) made of silver, silver-indium, silver-germanium or the like.
Since v) was brazed and attached via a soft brazing material of Hv ≦ 70, when the metal lid was welded to the metal frame by a seam welding method or the like, the metal frame greatly expanded and contracted. Even if a large stress is generated between the frame of the base and the metal frame, the stress is absorbed by appropriately deforming the brazing material, and as a result, cracks and cracks are generated in the frame of the base. And the metallized metal layer hardly peels off from the frame part. This makes it possible to achieve extremely high reliability of hermetic sealing of the container composed of the base and the metal lid, and the electronic device accommodated inside the container. Parts can be operated normally and stably for a long period of time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子部品収納用パッケージを半導体素
子を収容するパッケージに適用した場合の一実施例を示
す断面図である。
FIG. 1 is a cross-sectional view showing an embodiment in which an electronic component housing package of the present invention is applied to a package housing a semiconductor element.

【図2】図1に示すパッケージの要部拡大断面図であ
る。
FIG. 2 is an enlarged sectional view of a main part of the package shown in FIG.

【符号の説明】[Explanation of symbols]

1・・・・・基体 2・・・・・枠部 3・・・・・金属製蓋体 4・・・・・半導体素子(電子部品) 5・・・・・メタライズ配線層 7・・・・・メタライズ金属層 8・・・・・金属枠体 9・・・・・ロウ材 DESCRIPTION OF SYMBOLS 1 ... Base 2 ... Frame part 3 ... Metal lid 4 ... Semiconductor element (electronic component) 5 Metallized wiring layer 7 ... ..Metalized metal layer 8 ... Metal frame 9 ... Brazing material

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】上面外周部に枠部を有する基体と、該枠部
上面に被着された枠状のメタライズ金属層と、該メタラ
イズ金属層にロウ材を介して取着された金属枠体と、該
金属枠体に溶接される金属製蓋体とから成り、内部に電
子部品を気密に収容する電子部品収納用パッケージであ
って、前記ロウ材のビッカース硬度(Hv)がHv≦7
0であることを特徴とする電子部品収納用パッケージ。
1. A base having a frame on the outer periphery of an upper surface, a frame-shaped metallized metal layer attached to the upper surface of the frame, and a metal frame attached to the metalized metal layer via a brazing material. And a metal lid welded to the metal frame, and a package for electronic component storage in which electronic components are hermetically sealed therein, wherein the Vickers hardness (Hv) of the brazing material is Hv ≦ 7.
0. An electronic component storage package, which is 0.
【請求項2】前記ロウ材が銀、銀ーインジウム、銀ーゲ
ルマニウムの少なくとも1種からなることを特徴とする
請求項1に記載の電子部品収納用パッケージ。
2. The electronic component storage package according to claim 1, wherein said brazing material is made of at least one of silver, silver-indium, and silver-germanium.
JP9233137A 1997-08-28 1997-08-28 Package for housing electronic component Pending JPH1174392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9233137A JPH1174392A (en) 1997-08-28 1997-08-28 Package for housing electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9233137A JPH1174392A (en) 1997-08-28 1997-08-28 Package for housing electronic component

Publications (1)

Publication Number Publication Date
JPH1174392A true JPH1174392A (en) 1999-03-16

Family

ID=16950317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9233137A Pending JPH1174392A (en) 1997-08-28 1997-08-28 Package for housing electronic component

Country Status (1)

Country Link
JP (1) JPH1174392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148457A1 (en) * 2013-03-21 2014-09-25 日本碍子株式会社 Ceramic package and electronic component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148457A1 (en) * 2013-03-21 2014-09-25 日本碍子株式会社 Ceramic package and electronic component
JPWO2014148457A1 (en) * 2013-03-21 2017-02-16 日本碍子株式会社 Ceramic packages and electronic components

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