JP3236836B2 - Electronic equipment - Google Patents

Electronic equipment

Info

Publication number
JP3236836B2
JP3236836B2 JP17424599A JP17424599A JP3236836B2 JP 3236836 B2 JP3236836 B2 JP 3236836B2 JP 17424599 A JP17424599 A JP 17424599A JP 17424599 A JP17424599 A JP 17424599A JP 3236836 B2 JP3236836 B2 JP 3236836B2
Authority
JP
Japan
Prior art keywords
metal layer
metallized
metal
peripheral edge
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17424599A
Other languages
Japanese (ja)
Other versions
JP2001007234A (en
Inventor
真樹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP17424599A priority Critical patent/JP3236836B2/en
Publication of JP2001007234A publication Critical patent/JP2001007234A/en
Application granted granted Critical
Publication of JP3236836B2 publication Critical patent/JP3236836B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、セラミックス等の
絶縁基体と金属蓋体とから成る容器の内部に圧電振動子
や半導体素子等の電子部品を気密に収容した電子装置に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device in which electronic components such as a piezoelectric vibrator and a semiconductor element are hermetically housed in a container formed of an insulating base such as ceramics and a metal cover.

【0002】[0002]

【従来の技術】圧電振動子や半導体素子等の電子部品
は、この電子部品を収容するための容器内に気密に収容
されることによって製品としての電子装置となる。
2. Description of the Related Art Electronic components such as a piezoelectric vibrator and a semiconductor element are air-tightly accommodated in a container for accommodating the electronic components to become an electronic device as a product.

【0003】かかる電子装置において最も信頼性の高い
とされるものは、酸化アルミニウム質焼結体等のセラミ
ックスから成り、上面中央部に電子部品が搭載される搭
載部およびこの搭載部を取り囲むように被着された枠状
のメタライズ金属層を有する絶縁基体と、この絶縁基体
のメタライズ金属層に搭載部を取り囲むようにして取着
された鉄−ニッケル合金や鉄−ニッケル−コバルト合金
から成る金属枠体と、この金属枠体にシーム溶接により
接合される鉄−ニッケル合金や鉄−ニッケル−コバルト
合金から成る金属蓋体とから構成される容器内部に電子
部品を気密に封止したタイプのものである。
The most reliable one of such electronic devices is made of ceramics such as an aluminum oxide sintered body, and has a mounting portion on which an electronic component is mounted at the center of the upper surface and a mounting portion surrounding the mounting portion. An insulating substrate having a frame-shaped metallized metal layer adhered thereto, and a metal frame made of an iron-nickel alloy or an iron-nickel-cobalt alloy attached to the metallized metal layer of the insulating substrate so as to surround a mounting portion. A type in which electronic components are hermetically sealed inside a container comprising a body and a metal lid made of an iron-nickel alloy or an iron-nickel-cobalt alloy joined to the metal frame by seam welding. is there.

【0004】このタイプの電子装置は、絶縁基体の搭載
部に電子部品を搭載した後、絶縁基体に取着された金属
枠体に金属蓋体を載置して、この金属蓋体の外周縁にシ
ーム溶接機の一対のローラー電極を接触させながら転動
させるとともに、このローラー電極間に溶接のための大
電流を流すことによりローラー電極と金属蓋体との接触
部を高温とし、この熱によって金属枠体に金属蓋体をシ
ーム溶接することによって製作される。
In an electronic device of this type, after mounting an electronic component on a mounting portion of an insulating base, a metal lid is mounted on a metal frame attached to the insulating base, and an outer peripheral edge of the metal lid is mounted. Rolling while contacting a pair of roller electrodes of a seam welding machine, and applying a large current for welding between the roller electrodes to raise the temperature of the contact portion between the roller electrodes and the metal lid, It is manufactured by seam welding a metal lid to a metal frame.

【0005】しかしながら、このタイプの電子装置は、
絶縁基体に金属蓋体をシーム溶接するための下地金属と
して金属枠体が必要であり、このため金属枠体の分だけ
電子装置の高さが高いものとなってしまい、近時の電子
装置に要求される薄型化が困難であるという問題点を有
していた。また、金属枠体の価格分だけ高価なものとな
ってしまうという問題点も有していた。
However, this type of electronic device is
A metal frame is required as a base metal for seam welding a metal lid to an insulating base, and the height of the electronic device is increased by the metal frame. There was a problem that it was difficult to reduce the thickness required. In addition, there is also a problem that the price is increased by the price of the metal frame.

【0006】そこで、上面中央部に電子部品を搭載する
搭載部を、および上面外周部に搭載部を取り囲む枠状で
厚みが10〜50μm、幅が0.3 〜0.5 mm程度のメタライ
ズ金属層を有する酸化アルミニウム質焼結体等のセラミ
ックスから成る絶縁基体と、鉄−ニッケル合金や鉄−ニ
ッケル−コバルト合金等から成る金属蓋体とから成る容
器を準備するとともに、絶縁基体の搭載部に電子部品を
搭載した後、絶縁基体のメタライズ金属層に金属蓋体を
間にろう材を挟んで載置し、この金属蓋体の外周縁にシ
ーム溶接機の一対のローラー電極を接触させながら転動
させて、このローラー電極間に溶接のための大電流を流
すことによりローラー電極と金属蓋体との接触部を高温
とし、この熱によってろう材を溶融させ、金属蓋体をろ
う材を介してメタライズ金属層にシーム溶接することに
よって絶縁基体と金属蓋体とから成る容器の内部に電子
部品を気密に封止した電子装置が提案されている。
Accordingly, an oxidizing device having a mounting portion for mounting electronic components at the center of the upper surface and a metallized metal layer having a thickness of 10 to 50 μm and a width of approximately 0.3 to 0.5 mm in a frame shape surrounding the mounting portion at the outer peripheral portion of the upper surface. Prepare a container consisting of an insulating base made of ceramics such as an aluminum sintered body, and a metal lid made of iron-nickel alloy or iron-nickel-cobalt alloy, and mount electronic components on the mounting portion of the insulating base. After that, a metal lid is placed on the metallized metal layer of the insulating substrate with a brazing material interposed therebetween, and the metal lid is rolled while being brought into contact with a pair of roller electrodes of a seam welding machine on the outer peripheral edge of the metal lid, By passing a large current for welding between the roller electrodes, the contact portion between the roller electrode and the metal lid is heated to a high temperature, and the heat melts the brazing material, and the metal lid is put through the metallization through the brazing material. Electronic device encapsulated electronic components hermetically inside a container made of an insulating substrate and the metal lid by seam welding has been proposed to the metal layer.

【0007】この電子装置によれば、メタライズ金属層
と金属蓋体とは両者の間に介在させたろう材を介して接
合することから、金属蓋体をシーム溶接するための下地
金属としての鉄−ニッケル合金や鉄−ニッケル−コバル
ト合金等から成る金属枠体を必要としない。したがっ
て、その分、高さを低くすることができ、かつ安価であ
る。
According to this electronic device, since the metallized metal layer and the metal lid are joined via the brazing material interposed therebetween, the metallized metal layer and the metal lid are made of iron as a base metal for seam welding the metal lid. There is no need for a metal frame made of a nickel alloy, an iron-nickel-cobalt alloy, or the like. Therefore, the height can be reduced accordingly and the cost is low.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上述の
ように金属蓋体とメタライズ金属層とを両者の間にろう
材を介在させてシーム溶接により接合した容器の内部に
電子部品を気密に収容したタイプの電子装置では、一般
的に、金属蓋体の大きさがメタライズ金属層の外周の大
きさと略同一である。そして、金属蓋体をメタライズ金
属層にシーム溶接する際にシーム溶接機の一対のローラ
ー電極が接触する金属蓋体の外周縁が局所的に極めて高
温となることから、この金属蓋体の外周縁に対応するメ
タライズ金属層の外周縁に大きな熱負荷が印加され、こ
のため、メタライズ金属層の外周縁が絶縁基体から剥離
してしまい、容器の気密信頼性を著しく低下させてしま
うことがあるという問題点を有していた。
However, as described above, electronic components are hermetically housed in a container in which the metal lid and the metallized metal layer are joined by seam welding with a brazing material interposed therebetween. In electronic devices of the type, generally, the size of the metal lid is substantially the same as the size of the outer periphery of the metallized metal layer. When the metal lid is seam-welded to the metallized metal layer, the outer edge of the metal lid, which is brought into contact with the pair of roller electrodes of the seam welding machine, becomes extremely hot locally. A large thermal load is applied to the outer peripheral edge of the metallized metal layer corresponding to the above, which may cause the outer peripheral edge of the metallized metal layer to be peeled off from the insulating base, thereby significantly reducing the hermetic reliability of the container. Had problems.

【0009】本発明は、かかる問題点に鑑み案出された
ものであり、その目的は金属蓋体をメタライズ金属層に
シーム溶接する際に、メタライズ金属層の外周縁に印加
される熱負荷を小さなものとして、メタライズ金属層の
外周縁が絶縁基体から剥離することがなく、容器の気密
封止を完全とし、内部に収容する電子部品を長期間にわ
たり正常かつ安定に作動させるのを可能とした気密信頼
性の高い電子装置を提供することにある。
The present invention has been devised in view of the above problems, and has as its object to reduce the heat load applied to the outer peripheral edge of the metallized metal layer when seam welding the metal lid to the metallized metal layer. As a small one, the outer peripheral edge of the metallized metal layer does not peel off from the insulating base, making the container hermetic sealing perfect and enabling the electronic components housed inside to operate normally and stably for a long time. An object of the present invention is to provide an electronic device with high airtight reliability.

【0010】[0010]

【課題を解決するための手段】本発明の電子装置は、絶
縁基体の上面に被着された厚みが10〜50μmであり幅が
0.3〜0.5mmであるとともに断面形状が平坦面の下面と
この下面より幅が小さい平坦面の上面と曲面の側面とで
構成される形状となっている枠状のメタライズ金属層の
内側に電子部品を搭載するとともに、前記メタライズ金
属層の上面に、下面にろう材が被着された金属蓋体を、
この金属蓋体の外周縁を前記メタライズ金属層の外周縁
より0.05mm以上内側に、かつ内周縁より0.1mm以上
外側に位置させて、間にろう材を介してシーム溶接によ
り接合して成ることを特徴とするものである。
An electronic device according to the present invention has a thickness of 10 to 50 μm and a width of 10 to 50 μm, which is applied to an upper surface of an insulating substrate.
An electronic component inside a frame-shaped metallized metal layer which is 0.3 to 0.5 mm and has a cross-sectional shape formed of a lower surface of a flat surface, an upper surface of a flat surface smaller in width than the lower surface, and a curved side surface. A metal lid having a brazing material adhered to the lower surface on the upper surface of the metallized metal layer,
The outer peripheral edge of the metal lid is located 0.05 mm or more inside the outer peripheral edge of the metallized metal layer and 0.1 mm or more outside the inner peripheral edge, and is joined by seam welding with a brazing material therebetween. It is characterized by the following.

【0011】本発明の電子装置によれば、下面にろう材
が被着された金属蓋体の外周縁を絶縁基体の上面に被着
されている厚みが10〜50μmであり幅が0.3〜0.5mmで
あるとともに断面形状が平坦面の下面とこの下面より幅
が小さい平坦面の上面と曲面の側面とで構成される形状
となっている枠状のメタライズ金属層の外周縁より0.05
mm以上内側に、かつ内周縁より0.1mm以上外側に位
置させて、間にろう材を介してシーム溶接により接合す
ることから、金属蓋体をメタライズ金属層にシーム溶接
する際に金属蓋体の外周縁が局所的に高温となったとし
ても、その熱による熱負荷はメタライズ金属層の外周縁
より0.05mm以上内側に大きく印加されることとなり、
メタライズ金属層の外周縁には大きく印加されないの
で、メタライズ金属層の外周縁が絶縁基体から剥離する
ことを有効に防止することができる。また、金属蓋体の
外周縁をメタライズ金属層の内周縁より0.1mm以上外
側に位置させて、間にろう材を介してシーム溶接により
接合することから、ろう材による封止幅が狭いものとな
ることはなく、金属蓋体とメタライズ金属層とを気密信
頼性高くかつ強固に接合することができる。
According to the electronic device of the present invention, the outer peripheral edge of the metal lid having the brazing material adhered to the lower surface is adhered to the upper surface of the insulating base with a thickness of 10 to 50 μm and a width of 0.3 to 0.5. 0.05 mm from the outer peripheral edge of the frame-shaped metallized metal layer having a cross-sectional shape that is formed by the lower surface of the flat surface, the upper surface of the flat surface smaller in width than the lower surface, and the side surface of the curved surface.
mm or more inside and 0.1 mm or more outside the inner peripheral edge, and joined by seam welding via a brazing filler metal, so that when the metal cover is seam-welded to the metallized metal layer, Even if the outer peripheral edge is locally high in temperature, the thermal load due to the heat will be applied more than 0.05 mm inward from the outer peripheral edge of the metallized metal layer,
Since a large voltage is not applied to the outer peripheral edge of the metallized metal layer, it is possible to effectively prevent the outer peripheral edge of the metallized metal layer from being separated from the insulating base. In addition, since the outer peripheral edge of the metal lid is located 0.1 mm or more outside the inner peripheral edge of the metallized metal layer and joined by seam welding with a brazing material therebetween, the sealing width by the brazing material is narrow. In this case, the metal lid and the metallized metal layer can be joined tightly with high airtight reliability.

【0012】[0012]

【発明の実施の形態】次に、本発明の電子装置を添付の
図面を基に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an electronic device according to the present invention will be described with reference to the accompanying drawings.

【0013】図1は本発明の電子装置の実施の形態の一
例を示した断面図であり、同図において1は絶縁基体、
2は金属蓋体、3は電子部品である。そして、絶縁基体
1と金属蓋体2とから成る容器の内部に例えば圧電振動
子や半導体素子等の電子部品3を気密に収容することに
よって電子装置が構成されている。
FIG. 1 is a sectional view showing an example of an embodiment of an electronic device according to the present invention. In FIG.
2 is a metal cover, and 3 is an electronic component. An electronic device is configured by hermetically housing an electronic component 3 such as a piezoelectric vibrator or a semiconductor element in a container including the insulating base 1 and the metal lid 2.

【0014】絶縁基体1は、電子部品3を支持するため
の支持体であり、酸化アルミニウム質焼結体や窒化アル
ミニウム質焼結体等のセラミックスから成り、その上面
中央部に電子部品3を収容するための凹部Aを有してい
る。そして凹部Aの底面には電子部品3を搭載するため
の搭載部1aが形成されており、この搭載部1aに電子
部品3が搭載されている。
The insulating substrate 1 is a support for supporting the electronic component 3 and is made of a ceramic such as an aluminum oxide sintered body or an aluminum nitride sintered body. To form a concave portion A. A mounting portion 1a for mounting the electronic component 3 is formed on the bottom surface of the concave portion A, and the electronic component 3 is mounted on the mounting portion 1a.

【0015】絶縁基体1は、例えばこれが酸化アルミニ
ウム質焼結体から成る場合であれば、酸化アルミニウム
・酸化珪素・酸化マグネシウム・酸化カルシウム等の原
料粉末に適当な有機バインダ・溶剤を添加混合して泥漿
状となすとともに、これを従来周知のドクターブレード
法やカレンダーロール法を採用することによってセラミ
ックグリーンシートとなし、しかる後、このセラミック
グリーンシートに適当な打ち抜き加工を施すとともに複
数枚積層し、高温で焼成することによって製作される。
For example, when the insulating substrate 1 is made of an aluminum oxide sintered body, a suitable organic binder and a solvent are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. A ceramic green sheet is formed by adopting a well-known doctor blade method or a calender roll method, and thereafter, the ceramic green sheet is appropriately punched, and a plurality of ceramic green sheets are laminated. It is manufactured by firing.

【0016】また、絶縁基体1には、搭載部1aの上面
から絶縁基体1の下面にかけて導出するタングステンや
モリブデン等の金属粉末メタライズから成るメタライズ
配線層4が被着形成されている。
Further, a metallized wiring layer 4 made of metal powder of metal such as tungsten or molybdenum, which is led out from the upper surface of the mounting portion 1a to the lower surface of the insulating substrate 1, is formed on the insulating substrate 1.

【0017】メタライズ配線層4は、電子部品3の各電
極を外部に電気的に導出するための導電路として機能
し、その搭載部1aに位置する部位には電子部品3の電
極が例えば導電性接着剤を介して電気的に接続されてい
る。そして、メタライズ配線層4の絶縁基体1の下面に
導出した部位は、外部電気回路基板(図示せず)の配線
導体に例えば半田を介して電気的に接続される。
The metallized wiring layer 4 functions as a conductive path for electrically leading each electrode of the electronic component 3 to the outside. They are electrically connected via an adhesive. The portion of the metallized wiring layer 4 extending to the lower surface of the insulating base 1 is electrically connected to a wiring conductor of an external electric circuit board (not shown) via, for example, solder.

【0018】メタライズ配線層4は、例えばこれがタン
グステン粉末メタライズから成る場合であれば、タング
ステン粉末に適当な有機バインダ・溶剤を添加混合して
得たタングステンペーストを絶縁基体1となるセラミッ
クグリーンシートに従来周知のスクリーン印刷法により
所定パターンに印刷塗布し、これを絶縁基体1となるセ
ラミックグリーンシートとともに焼成することによっ
て、絶縁基体1の搭載部1aから下面にかけて所定パタ
ーンに被着導出される。
If the metallized wiring layer 4 is made of, for example, metallized tungsten powder, a tungsten paste obtained by adding and mixing an appropriate organic binder and solvent to the tungsten powder is applied to a ceramic green sheet to be used as the insulating substrate 1 by a conventional method. A predetermined pattern is printed and applied by a well-known screen printing method, and is fired together with a ceramic green sheet serving as the insulating base 1, so that the insulating base 1 is adhered and derived in a predetermined pattern from the mounting portion 1a to the lower surface.

【0019】なお、メタライズ配線層4は、その露出す
る表面にニッケル・金等の耐食性に優れ、かつ半田との
濡れ性に優れる金属をメッキ法により1〜20μmの厚み
に被着させておくと、メタライズ配線層4の酸化腐食を
有効に防止することができるとともに、メタライズ配線
層4と外部電気回路基板の配線導体との接続を強固なも
のとなすことができる。従って通常は、メタライズ配線
層4の表面にはニッケル・金等の耐食性に優れ、かつ半
田との濡れ性に優れる金属がメッキ法により1〜20μm
の厚みに被着されている。
The metallized wiring layer 4 is preferably provided with a metal having excellent corrosion resistance and excellent wettability with solder, such as nickel or gold, having a thickness of 1 to 20 μm by plating on the exposed surface. In addition, oxidation corrosion of the metallized wiring layer 4 can be effectively prevented, and the connection between the metallized wiring layer 4 and the wiring conductor of the external electric circuit board can be made strong. Therefore, the surface of the metallized wiring layer 4 is usually coated with a metal such as nickel and gold having excellent corrosion resistance and excellent wettability with solder by 1 to 20 μm by plating.
It is attached to the thickness of.

【0020】さらに、絶縁基体1の上面外周部には、幅
が0.3〜0.5mm程度で、厚みが10〜50μm程度の断面形
状が平坦面の下面とこの下面より幅が小さい平坦面の上
面と曲面の側面とで構成される形状となっている枠状の
メタライズ金属層5が搭載部1aを取り囲むようにして
被着形成されている。
Further, on the outer periphery of the upper surface of the insulating substrate 1, there are a lower surface of a flat surface having a width of about 0.3 to 0.5 mm and a thickness of about 10 to 50 μm and an upper surface of a flat surface having a width smaller than the lower surface. A frame-shaped metallized metal layer 5 having a shape composed of a curved side surface is formed so as to surround the mounting portion 1a.

【0021】メタライズ金属層5は、絶縁基体1に金属
蓋体2を間にろう材6を介してシーム溶接するための下
地金属として機能し、メタライズ配線層4と同様にタン
グステンやモリブデン等の金属粉末メタライズから成
る。
The metallized metal layer 5 functions as a base metal for seam welding the metal cover 2 to the insulating base 1 with the brazing material 6 interposed therebetween, and, like the metallized wiring layer 4, a metal such as tungsten or molybdenum. Consists of powder metallization.

【0022】そして、メタライズ金属層5は、例えばこ
れがタングステン粉末メタライズから成る場合であれ
ば、タングステン粉末に適当な有機バインダ・溶剤を添
加混合して得たタングステンペーストを絶縁基体1とな
るセラミックグリーンシート上に従来周知のスクリーン
印刷法を採用して所定厚み・所定パターンに印刷塗布
し、これを絶縁基体1となるセラミックグリーンシート
とともに焼成することによって絶縁基体1の上面に搭載
部1aを取り囲むようにして枠状に被着形成される。
If the metallized metal layer 5 is made of, for example, metallized tungsten powder, a tungsten paste obtained by adding an appropriate organic binder and solvent to the tungsten powder is mixed with a ceramic green sheet serving as the insulating substrate 1. On the upper surface of the insulating substrate 1, the upper surface of the mounting portion 1a is surrounded by printing and applying a predetermined thickness and a predetermined pattern by using a conventionally known screen printing method, and firing this together with a ceramic green sheet serving as the insulating substrate 1. To form a frame.

【0023】なお、メタライズ金属層5はその表面にニ
ッケル・金等の耐食性に優れ、かつろう材6との濡れ性
に優れる金属をめっき法により1〜20μmの厚みに被着
させておくと、メタライズ金属層5が酸化腐食するのを
有効に防止することができるとともに、メタライズ金属
層5へのろう材6を介した金属蓋体2の接合を強固なも
のとなすことができる。従って通常は、メタライズ金属
層5の表面にはニッケルや金等の耐食性に優れ、かつろ
う材6との濡れ性に優れる金属がめっき法により1〜20
μmの厚みに被着されている。
When the metallized metal layer 5 is coated with a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with the brazing material 6 to a thickness of 1 to 20 μm by plating, The metallized metal layer 5 can be effectively prevented from being oxidized and corroded, and the bonding of the metal lid 2 to the metallized metal layer 5 via the brazing material 6 can be made strong. Therefore, usually, the surface of the metallized metal layer 5 is coated with a metal such as nickel or gold having excellent corrosion resistance and excellent wettability with the brazing material 6 by plating.
It is applied to a thickness of μm.

【0024】また、メタライズ金属層5に溶接された金
属蓋体2は、厚みが0.1 mm程度の鉄−ニッケル合金板
あるいは鉄−ニッケル−コバルト合金板から成り、絶縁
基体1に被着されたメタライズ金属層5に間にろう材6
を介してシーム溶接により接合されることにより絶縁基
体1との間で電子部品3を気密に封止している。
The metal lid 2 welded to the metallized metal layer 5 is made of an iron-nickel alloy plate or an iron-nickel-cobalt alloy plate having a thickness of about 0.1 mm. Brazing material 6 between metal layers 5
The electronic component 3 is hermetically sealed between itself and the insulating base 1 by seam welding.

【0025】金属蓋体2とメタライズ金属層5とのシー
ム溶接による接合は、平板状の金属蓋体2を絶縁基体1
に被着されたメタライズ金属層5に間にろう材6を配置
して載置し、この金属蓋体2の外周縁にシーム溶接機の
一対のローラー電極を接触させながら転動させるととも
にこのローラー電極間に溶接のための大電流を流し、ロ
ーラー電極と金属蓋体との接触部をジュール発熱させ、
この熱を金属蓋体2の下面に伝達させてろう材6の一部
を溶融させることによって行なわれている。
The metal cover 2 and the metallized metal layer 5 are joined by seam welding by joining the flat metal cover 2 to the insulating base 1.
A brazing material 6 is arranged and placed between the metallized metal layers 5 adhered to the metal cover 2, and a pair of roller electrodes of a seam welding machine are brought into contact with the outer peripheral edge of the metal lid 2 while rolling. A large current for welding is passed between the electrodes, causing the contact between the roller electrode and the metal lid to generate Joule heat,
This heat is transmitted to the lower surface of the metal cover 2 to melt a part of the brazing material 6.

【0026】また、金属蓋体2とメタライズ金属層5と
の間に配されるろう材6は、銀−銅合金や金−錫合金・
鉛−錫合金・アルミニウム−シリコン合金・銅−亜鉛合
金・銀−銅−リン合金あるいは銀−インジウム−錫合金
等から成り、金属蓋体2をメタライズ金属層5に接合す
るための接合材として機能し、金属蓋体2の外周縁とロ
ーラー電極との接触部に発生するジュール発熱による熱
が金属蓋体2の下面外周部に伝達されることによってこ
の熱に応じた溶融幅をもってその一部が溶融する。
The brazing material 6 disposed between the metal cover 2 and the metallized metal layer 5 is made of a silver-copper alloy or a gold-tin alloy.
It is made of a lead-tin alloy, aluminum-silicon alloy, copper-zinc alloy, silver-copper-phosphorus alloy, silver-indium-tin alloy, or the like, and functions as a joining material for joining the metal cover 2 to the metallized metal layer 5. Then, the heat generated by the Joule heat generated at the contact portion between the outer peripheral edge of the metal lid 2 and the roller electrode is transmitted to the outer peripheral portion of the lower surface of the metal lid 2 so that a part of the metal has a melting width corresponding to the heat. Melts.

【0027】なお、ろう材6は、金属蓋体2とメタライ
ズ金属層5との間に配置させる際にその配置の作業性を
良好とするために、予め金属蓋体2の下面にクラッド法
やめっき法等により厚みが10〜50μm程度に被着されて
いる。
When the brazing material 6 is disposed between the metal cover 2 and the metallized metal layer 5, the lower surface of the metal cover 2 can be clad by a cladding method or the like in order to improve the workability of the arrangement. It is applied to a thickness of about 10 to 50 μm by plating or the like.

【0028】そして、本発明の電子装置においては、金
属蓋体2の外周縁をメタライズ金属層5の外周縁から0.
05mm以上内側に位置させていることが重要である。
In the electronic device according to the present invention, the outer peripheral edge of the metal cover 2 is set to be 0.1 mm from the outer peripheral edge of the metallized metal layer 5.
It is important that it is located at least 05 mm inside.

【0029】金属蓋体2の外周縁をメタライズ金属層5
の外周縁から0.05mm以上内側に位置させていること
で、メタライズ金属層5の上に金属蓋体2を間にろう材
6を挟んで載置し、金属蓋体2の外周縁にシーム溶接機
の一対のローラー電極を接触させながら転動させるとと
もにこのローラー電極間に溶接のための大電流を流し、
ローラー電極と金属蓋体2との接触部を発熱させて金属
蓋体2をメタライズ金属層5にろう材6を介してシーム
溶接する際に、金属蓋体2の外周縁が局部的に極めて高
温となったとしても、その熱による熱負荷は、メタライ
ズ金属層5の外周縁から0.05mm以上内側に大きく印加
されることとなり、メタライズ金属層5の外周縁には大
きく印加されないことから、メタライズ金属層5の外周
縁が絶縁基体1から剥離するようなことはなく、これに
よって容器の気密封止を完全とし、容器内部に収容する
電子部品3を長期間にわたり正常かつ安定に作動させる
ことが可能となる。
The outer peripheral edge of the metal cover 2 is covered with a metallized metal layer 5.
The metal lid 2 is placed on the metallized metal layer 5 with the brazing material 6 interposed between the metallized metal layer 5 and the outer peripheral edge of the metal lid 2 by seam welding. Rolling while contacting a pair of roller electrodes of the machine and passing a large current for welding between these roller electrodes,
When the contact portion between the roller electrode and the metal lid 2 is heated to seam weld the metal lid 2 to the metallized metal layer 5 via the brazing material 6, the outer peripheral edge of the metal lid 2 is locally extremely hot. However, the heat load due to the heat is largely applied to the inside of the outer periphery of the metallized metal layer 5 by 0.05 mm or more, and is not greatly applied to the outer periphery of the metallized metal layer 5. The outer peripheral edge of the layer 5 does not peel off from the insulating base 1, whereby the hermetic sealing of the container is completed, and the electronic components 3 housed inside the container can be operated normally and stably for a long period of time. Becomes

【0030】なお、金属蓋体2の外周縁の位置がメタラ
イズ金属層5の外周縁から内側に0.05mm未満の位置で
ある場合には、金属蓋体2をメタライズ金属層5に間に
ろう材6を介してシーム溶接する際に、局部的に極めて
高温となった金属蓋体2の外周縁からの熱による熱負荷
がメタライズ金属層5の外周縁に大きく作用して、メタ
ライズ金属層5の外周縁に絶縁基体1からの剥離を発生
させる危険性が大きなものとなってしまうこととなる。
したがって、金属蓋体2の外周縁の位置は、メタライズ
金属層5の外周縁から0.05mm以上内側の位置に特定さ
れる。
When the outer peripheral edge of the metal cover 2 is located at a position less than 0.05 mm inward from the outer peripheral edge of the metallized metal layer 5, the metal cover 2 is placed between the metallized metal layer 5 and the brazing material. When seam welding is performed through the metallized metal layer 6, the heat load due to heat from the outer peripheral edge of the metal lid 2, which has become extremely hot locally, largely acts on the outer peripheral edge of the metallized metal layer 5, and The risk of peeling off from the insulating base 1 on the outer peripheral edge is increased.
Therefore, the position of the outer peripheral edge of the metal lid 2 is specified at a position 0.05 mm or more inside the outer peripheral edge of the metallized metal layer 5.

【0031】さらに、金属蓋体2の外周縁の位置がメタ
ライズ金属層5の内周縁から外側に0.1 mm未満の位置
である場合には、金属蓋体2をメタライズ金属層5に間
にろう材6を介してシーム溶接した後に、ろう材6によ
る封止幅が狭いものとなることから、金属蓋体2とメタ
ライズ金属層5とを気密信頼性高くかつ強固に接合する
ことが困難となる傾向にある。したがって、金属蓋体2
の外周縁の位置は、メタライズ金属層5の内周縁から0.
1 mm以上外側の位置であることが好ましい。
When the outer peripheral edge of the metal cover 2 is located less than 0.1 mm outside the inner peripheral edge of the metallized metal layer 5, the metal cover 2 is placed between the metallized metal layer 5 and the brazing material. 6, after the seam welding is performed, the sealing width by the brazing material 6 becomes narrow, so that it becomes difficult to join the metal lid 2 and the metallized metal layer 5 with high airtight reliability and firmly. It is in. Therefore, the metal lid 2
Position of the outer peripheral edge of the metallized metal layer 5 is 0.
Preferably, the position is 1 mm or more outside.

【0032】かくして、本発明の電子装置によれば、絶
縁基体1と金属蓋体2とから成る容器の内部に電子部品
3が気密信頼性高く収容された電子装置が得られる。
Thus, according to the electronic device of the present invention, an electronic device in which the electronic component 3 is housed with high hermetic reliability inside the container including the insulating base 1 and the metal lid 2 can be obtained.

【0033】なお、本発明は上述の実施の形態の一例に
限定されるものではなく、本発明の要旨を逸脱しない範
囲であれば種々の変更が可能であることはいうまでもな
い。
The present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the scope of the present invention.

【0034】[0034]

【発明の効果】本発明の電子装置によれば、下面にろう
材が被着された金属蓋体の外周縁を絶縁基体の上面に被
着されている厚みが10〜50μmであり幅が0.3〜0.5mm
であるとともに断面形状が平坦面の下面とこの下面より
幅が小さい平坦面の上面と曲面の側面とで構成される形
状となっている枠状のメタライズ金属層の外周縁より0.
05mm以上内側に、かつ内周縁より0.1mm以上外側に
位置させて、間にろう材を介してシーム溶接により接合
したことから、金属蓋体をメタライズ金属層にシーム溶
接する際に、金属蓋体の外周縁が局所的に高温となった
としても、その熱による熱負荷はメタライズ金属層の外
周縁より0.05mm以上内側に大きく印加されることとな
り、メタライズ金属層の外周縁には大きく印加されない
ので、メタライズ金属層の外周縁が絶縁基体から剥離す
ることを有効に防止することができ、その結果、容器の
気密封止を完全とし、内部に収容する電子部品を長期間
にわたり正常かつ安定に作動させるのを可能とした気密
信頼性の高い電子装置を提供することができる。また、
金属蓋体の外周縁をメタライズ金属層の内周縁より0.1
mm以上外側に位置させて、間にろう材を介してシーム
溶接により接合することから、ろう材による封止幅が狭
いものとなることはなく、金属蓋体とメタライズ金属層
とを気密信頼性高くかつ強固に接合することができる。
According to the electronic device of the present invention, the outer peripheral edge of the metal lid having the lower surface covered with the brazing material is attached to the upper surface of the insulating base with a thickness of 10 to 50 μm and a width of 0.3 to 0.3 μm. ~ 0.5mm
The outer peripheral edge of the frame-shaped metallized metal layer having a cross-sectional shape formed of the lower surface of the flat surface, the upper surface of the flat surface smaller in width than the lower surface, and the side surface of the curved surface.
Positioned at least 05 mm inward and 0.1 mm or more outside the inner peripheral edge and joined by seam welding with a brazing material in between, so when seam welding the metal lid to the metallized metal layer, the metal lid Even if the outer peripheral edge of the metallized metal layer becomes locally high temperature, the thermal load due to the heat will be greatly applied 0.05 mm or more inward from the outer peripheral edge of the metallized metal layer, and will not be greatly applied to the outer peripheral edge of the metallized metal layer. Therefore, it is possible to effectively prevent the outer peripheral edge of the metallized metal layer from being peeled off from the insulating base, and as a result, the hermetic sealing of the container is completed, and the electronic components housed therein can be normally and stably maintained for a long time. An airtight and highly reliable electronic device that can be operated can be provided. Also,
The outer edge of the metal lid is 0.1 mm from the inner edge of the metallized metal layer.
mm or more and the seam welding between the brazing material and the seam welding, so that the sealing width by the brazing material does not become narrow, and the metal lid and the metallized metal layer are sealed tightly. High and strong bonding can be achieved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電子装置の実施の形態の一例を示す断
面図である。
FIG. 1 is a cross-sectional view illustrating an example of an embodiment of an electronic device of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・絶縁基体 1a・・・・搭載部 2・・・・・金属蓋体 3・・・・・電子部品 5・・・・・メタライズ金属層 6・・・・・ろう材 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part 2 ... Metal cover 3 ... Electronic parts 5 Metallized metal layer 6 ... Brazing material

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 絶縁基体の上面に被着された厚みが10〜
50μmであり幅が0.3〜0.5mmであるとともに断面形状
が平坦面の下面と該下面より幅が小さい平坦面の上面と
曲面の側面とで構成される形状となっている枠状のメタ
ライズ金属層の内側に電子部品を搭載するとともに、前
記メタライズ金属層の上面に、下面にろう材が被着され
た金属蓋体を、該金属蓋体の外周縁を前記メタライズ金
属層の外周縁より0.05mm以上内側に、かつ内周縁より
0.1mm以上外側に位置させて、間にろう材を介してシ
ーム溶接により接合して成ることを特徴とする電子装
置。
The thickness of the insulating substrate is 10 to 10
A frame-shaped metallized metal layer having a thickness of 50 μm, a width of 0.3 to 0.5 mm , and a sectional shape including a lower surface of a flat surface, an upper surface of a flat surface having a width smaller than the lower surface, and side surfaces of a curved surface. An electronic component is mounted on the inside of the metallized metal layer, and on the upper surface of the metallized metal layer, a metal lid having a lower surface covered with a brazing material, the outer peripheral edge of the metal lid is 0.05 mm from the outer peripheral edge of the metallized metal layer. More inside and from the inner periphery
An electronic device, which is located 0.1 mm or more outside and joined by seam welding with a brazing material therebetween.
JP17424599A 1999-06-21 1999-06-21 Electronic equipment Expired - Fee Related JP3236836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17424599A JP3236836B2 (en) 1999-06-21 1999-06-21 Electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17424599A JP3236836B2 (en) 1999-06-21 1999-06-21 Electronic equipment

Publications (2)

Publication Number Publication Date
JP2001007234A JP2001007234A (en) 2001-01-12
JP3236836B2 true JP3236836B2 (en) 2001-12-10

Family

ID=15975265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17424599A Expired - Fee Related JP3236836B2 (en) 1999-06-21 1999-06-21 Electronic equipment

Country Status (1)

Country Link
JP (1) JP3236836B2 (en)

Also Published As

Publication number Publication date
JP2001007234A (en) 2001-01-12

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