JPS55132056A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55132056A
JPS55132056A JP3993679A JP3993679A JPS55132056A JP S55132056 A JPS55132056 A JP S55132056A JP 3993679 A JP3993679 A JP 3993679A JP 3993679 A JP3993679 A JP 3993679A JP S55132056 A JPS55132056 A JP S55132056A
Authority
JP
Japan
Prior art keywords
alloy
layer
film
wiring
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3993679A
Other languages
Japanese (ja)
Inventor
Toshio Yonezawa
Masaharu Aoyama
Jiro Oshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3993679A priority Critical patent/JPS55132056A/en
Publication of JPS55132056A publication Critical patent/JPS55132056A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a device with high reliability by interposing a metallic film working as a diffusion barrier for Cu, Si in alloy between an Al alloy metal of lower layer and a pure Al film of upper layer. CONSTITUTION:Electrode extraction layer 101-103 in thin film of Al-Si-Cu alloy 0.5-1mum thick are formed on a semiconductor substrate, which are covered with SiO2 film 11, and a window is provided on the layer 103. Next, a film 12 of Ti, Pt, W, Ta, Zr, Ni, Cr, Ti-W alloy, Ni-Cr alloy, etc. is laminated at 200-3000Angstrom , a pure Al 13 is fixed thereon, and a three-layer electrode wiring is formed. According to this constitution, Al alloy and Al are isolated securely through heat treatment after the wiring is formed and conductivity is also secured, an electromigration occurrence and a junction breakdown on the wiring side connected to the diffused layer is prevented by Al alloy, and a junction property with the connection is ensured by Al. A junction yield is sharply improved with high reliability.
JP3993679A 1979-04-03 1979-04-03 Semiconductor device Pending JPS55132056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3993679A JPS55132056A (en) 1979-04-03 1979-04-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3993679A JPS55132056A (en) 1979-04-03 1979-04-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55132056A true JPS55132056A (en) 1980-10-14

Family

ID=12566824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3993679A Pending JPS55132056A (en) 1979-04-03 1979-04-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55132056A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139426A (en) * 1982-02-15 1983-08-18 Fujitsu Ltd Manufacture of semiconductor device
EP0289274A2 (en) * 1987-04-30 1988-11-02 Hewlett-Packard Company Via connections in integrated circuits
EP0720231A2 (en) * 1994-12-29 1996-07-03 AT&T Corp. Multilayered Al-alloy structure for metal conductors
US6339258B1 (en) 1999-07-02 2002-01-15 International Business Machines Corporation Low resistivity tantalum

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139426A (en) * 1982-02-15 1983-08-18 Fujitsu Ltd Manufacture of semiconductor device
EP0289274A2 (en) * 1987-04-30 1988-11-02 Hewlett-Packard Company Via connections in integrated circuits
EP0720231A2 (en) * 1994-12-29 1996-07-03 AT&T Corp. Multilayered Al-alloy structure for metal conductors
US5561083A (en) * 1994-12-29 1996-10-01 Lucent Technologies Inc. Method of making multilayered Al-alloy structure for metal conductors
EP0720231A3 (en) * 1994-12-29 1996-12-11 At & T Corp Multilayered Al-alloy structure for metal conductors
US6339258B1 (en) 1999-07-02 2002-01-15 International Business Machines Corporation Low resistivity tantalum

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