GB1275153A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1275153A GB1275153A GB3870069A GB3870069A GB1275153A GB 1275153 A GB1275153 A GB 1275153A GB 3870069 A GB3870069 A GB 3870069A GB 3870069 A GB3870069 A GB 3870069A GB 1275153 A GB1275153 A GB 1275153A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- pressure
- plate
- aug
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/929—Electrical contact feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Contacts (AREA)
- Die Bonding (AREA)
Abstract
1275153 Semi-conductor devices WESTING- HOUSE ELECTRIC CORP 1 Aug 1969 [28 Aug 1968] 38700/69 Heading H1K A terminal contact for a pressure-contacted semi-conductor device comprises a conductive metal plate 10 having a Ni layer 12 and a Au layer 18 metallurgically bonded thereto. The plate 10 may be of Mo, W, Ta, Al, Cu or alloys thereof, or of Kovar (Registered Trade Mark) and both layers 12 and 18 are preferably applied by electroplating. A good metallurgical bond is obtained for each layer by heating in a non- oxidizing atmosphere firstly at 800-850 C. for 10 minutes and then at 605 C. for 5 minutes. A lead 22, e.g. braided or of solid Cu, is soldered to the plate 10 using, for example, a Ag or Ag-Au alloy 24. The arrangement is used in a conventional pressure-contacted diode, transistor or thyristor, the details of electrode, housing and pressure-applying means being given in the Specification.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75592368A | 1968-08-28 | 1968-08-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1275153A true GB1275153A (en) | 1972-05-24 |
Family
ID=25041252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3870069A Expired GB1275153A (en) | 1968-08-28 | 1969-08-01 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (1) | US3566209A (en) |
GB (1) | GB1275153A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506139B1 (en) * | 1970-07-10 | 1975-03-11 | ||
US4305087A (en) * | 1979-06-29 | 1981-12-08 | International Rectifier Corporation | Stud-mounted pressure assembled semiconductor device |
US4358784A (en) * | 1979-11-30 | 1982-11-09 | International Rectifier Corporation | Clad molybdenum disks for alloyed diode |
WO1994014190A1 (en) * | 1992-12-10 | 1994-06-23 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Surface structure for soldering and non-flux soldering method using the same |
EP1291914A1 (en) * | 2001-09-10 | 2003-03-12 | ABB Schweiz AG | Pressure-contactable power semiconductor module |
CN102443829B (en) * | 2011-12-08 | 2014-07-16 | 天津大学 | Surface plating of Ag-Ni electric contact and preparation process thereof |
US10014189B2 (en) * | 2015-06-02 | 2018-07-03 | Ngk Spark Plug Co., Ltd. | Ceramic package with brazing material near seal member |
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1968
- 1968-08-28 US US3566209D patent/US3566209A/en not_active Expired - Lifetime
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1969
- 1969-08-01 GB GB3870069A patent/GB1275153A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3566209A (en) | 1971-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |