KR20050002220A - 적층형 볼 그리드 어레이 패키지 및 그 제조방법 - Google Patents
적층형 볼 그리드 어레이 패키지 및 그 제조방법 Download PDFInfo
- Publication number
- KR20050002220A KR20050002220A KR1020030043574A KR20030043574A KR20050002220A KR 20050002220 A KR20050002220 A KR 20050002220A KR 1020030043574 A KR1020030043574 A KR 1020030043574A KR 20030043574 A KR20030043574 A KR 20030043574A KR 20050002220 A KR20050002220 A KR 20050002220A
- Authority
- KR
- South Korea
- Prior art keywords
- package
- solder ball
- bga
- stacked
- pad
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
- H01L2225/06586—Housing with external bump or bump-like connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1041—Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (29)
- 적어도 하나의 칩을 포함하는 베이스 BGA(ball grid array) 패키지; 및상기 베이스 BGA 패키지 상에 적층되며, 적어도 하나의 칩을 포함하는 다수의 BGA 패키지를 포함하며,상기 베이스 BGA 패키지와 그 상부에 적층되는 다수의 BGA 패키지는 솔더볼에 의하여 전기적으로 도통되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 항에 있어서, 상기 베이스 패키지 및 베이스 패키지 상에 적층되는 각각의 BGA 패키지는,표면에 와이어 본딩 패드가 배열되고, 뒷면에 상기 와이어 본딩 패드와 전기적으로 연결되는 솔더볼 안착 패드가 배열된 인쇄 회로 기판,상기 인쇄 회로 기판의 표면에 부착되며, 본딩 패드를 포함하는 적어도 하나의 반도체 칩,상기 반도체 칩의 본딩 패드와 상기 인쇄 회로 기판의 와이어 본딩 패드를 연결하는 와이어,상기 와이어 본딩 패드, 본딩 패드 및 와이어를 감싸도록 인쇄 회로 기판의소정 부분에 형성되는 봉지체, 및상기 인쇄 회로 기판의 저면의 솔더볼 안착 패드에 부착되는 솔더볼을 포함하는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 2 항에 있어서, 상기 적어도 하나의 반도체 칩은 소자가 형성된 면이 상부를 향하도록 부착되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 2 항에 있어서, 상기 최상부 BGA 패키지를 제외한 BGA 패키지들의 봉지체는 최상부에 위치하는 반도체 칩의 표면이 노출되도록 형성되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 4 항에 있어서, 상기 봉지체에 의하여 노출된 최상부의 반도체 칩 표면과, 그 상부에 적층되는 BGA 패키지의 솔더볼 사이에, 도전성 회로층이 개재되는 것을 특징으로 적층형 BGA 패키지.
- 제 5 항에 있어서, 상기 회로층은 솔더볼 안착 패드 및 상기 솔더볼 안착 패드와 반도체 칩의 본딩 패드를 연결하는 도전 패턴을 구비하는 테이프이며,상기 회로층은 봉지체에 의해 노출된 반도체 칩 표면에 부착되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 5 항에 있어서, 회로층은 상기 솔더볼 안착 패드 및 상기 솔더볼 안착 패드와 반도체 칩의 본딩 패드를 연결하는 도전 패턴을 구비하고,상기 회로층의 솔더볼 안착 패드와 도전 패턴은 상기 반도체 칩의 본딩 패드와 일체로 구성된 것을 특징으로 하는 적층형 BGA 패키지.
- 제 5 항에 있어서, 상기 회로층의 솔더볼 안착 패드는 상기 기판 저면의 솔더볼 안착 패드와 대응되도록 배치되고,상기 솔더볼은 회로층의 솔더볼 안착 패드 및 기판의 솔더볼 안착 패드와 콘택되도록 부착되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 2 항에 있어서, 상기 최상부에 적층되는 BGA 패키지의 봉지체는 해당 패키지내의 최상부에 부착되는 칩의 표면을 덮도록 형성되는 것을 특징으로 하는 적층형 패키지.
- 제 1 항에 있어서, 상기 베이스 패키지 및 적층되는 다수의 BGA 패키지 각각은 동일 수의 반도체 칩을 포함하는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 항에 있어서, 상기 베이스 패키지 및 적층되는 다수의 BGA 패키지는 서로 다른 수의 반도체 칩을 포함하는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 항에 있어서, 상기 적층된 BGA 패키지간을 연결하는 솔더볼은 밀봉제의 하여 봉지되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 항에 있어서, 상기 하나의 BGA 패키지에 실장되는 반도체 칩의 수는 2 내지 3개인 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 내지 제 n 패키지가 순차적으로 적층,연결된 적층형 BGA 반도체 패키지로서,상기 제 1 내지 제 n 패키지는, 상면에 와이어 본딩 패드가 배열되고 저면에 솔더볼 안착 패드가 배열된 인쇄 회로 기판과, 상기 인쇄 회로 기판의 상면에 부착되고 상면에 본딩 패드가 배열되어 있는 적어도 하나의 반도체 칩과, 상기 인쇄 회로 기판의 와이어 본딩 패드와 상기 반도체 칩의 본딩 패드를 연결하는 와이어와, 상기 와이어 본딩 패드, 본딩 패드 및 와이어를 감싸도록 상기 인쇄 회로 기판의 소정 부분에 형성되는 봉지체, 및 상기 인쇄 회로 기판의 저면에 부착되는 솔더볼을 포함하고,상기 제 1 내지 제 n-1 패키지의 상부에, 상기 최상부 반도체 칩과 전기적으로 연결되도록 회로층이 부착되고,상기 회로층은 상부에 적층되는 패키지의 솔더볼과 전기적으로 연결되는 것을 특징으로 하는 적층형 BGA 반도체 패키지.
- 제 14 항에 있어서, 상기 적어도 하나의 반도체 칩은 소자가 형성된 면이 상부를 향하도록 부착되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 제 1 내지 제 n-1 패키지들의 봉지체는 최상부에 부착되는 반도체 칩의 표면이 노출되도록 형성되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 회로층은 솔더볼 안착 패드 및 상기 솔더볼 안착 패드와 반도체 칩의 본딩 패드를 연결하는 도전 패턴을 구비하는 테이프인 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 회로층은 상기 솔더볼 안착 패드 및 상기 솔더볼 안착 패드와 반도체 칩의 본딩 패드를 연결하는 도전 패턴을 구비하고,상기 회로층의 솔더볼 안착 패드와 도전 패턴은 상기 반도체 칩의 본딩 패드와 일체로 구성된 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 회로층의 솔더볼 안착 패드는 상기 기판 저면의 솔더볼 안착 패드와 대응되도록 배치되고,상기 솔더볼은 회로층의 솔더볼 안착 패드 및 기판의 솔더볼 안착 패드와 콘택되도록 부착되는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 제 n 패키지의 봉지체는 해당 패키지내의 최상부에 부착되는 칩의 표면을 덮도록 형성되는 것을 특징으로 하는 적층형 패키지.
- 제 14 항에 있어서, 상기 제 1 내지 제 n 패키지 각각은 동일 수의 반도체 칩을 포함하는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 14 항에 있어서, 상기 제 1 내지 제 n 패키지는 서로 다른 수의 반도체 칩을 포함하는 것을 특징으로 하는 적층형 BGA 패키지.
- 제 1 항에 있어서, 상기 제 2 내지 제 n 패키지의 솔더볼은 밀봉제에 의하여 봉지되는 것을 특징으로 하는 적층형 BGA 패키지.
- (a)적어도 하나의 반도체 칩을 구비하는 BGA 패키지를 준비하는 단계;(b)상기 BGA 패키지 상부에 상기 반도체 칩과 전기적으로 연결되도록 회로층을 형성하는 단계; 및(c)상기 회로층 상부에 다른 BGA 패키지를 적어도 하나 적층시키는 단계를 포함하며, 는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
- 제 24 항에 있어서, 상기 BGA 패키지를 준비하는 단계는,상면에 와이어 본딩 패드가 배열되어 있고, 저면에 솔더볼 안착 패드를 구비한 인쇄 회로 기판을 제공하는 단계;상기 인쇄 회로 기판의 상면에, 본딩 패드를 구비한 제 1 반도체 칩을 부착하는 단계;상기 제 1 반도체 칩의 본딩 패드와 상기 인쇄 회로 기판의 와이어 본딩 패드를 와이어로 본딩하는 단계;상기 제 1 반도체 칩 상부에, 본딩 패드를 구비한 제 2 반도체 칩을 부착하는 단계;상기 제 2 반도체 칩의 본딩 패드와 상기 인쇄 회로 기판의 와이어 본딩 패드를 와이어로 본딩하는 단계;상기 인쇄 회로 기판의 와이어 본딩 패드, 제 1 및 제 2 반도체 칩의 본딩 패드 및 와이어를 보호하도록 인쇄 회로 기판의 소정 부분에 봉지체를 형성하는 단계; 및상기 인쇄 회로 기판의 뒷면에 솔더볼을 솔더링하는 단계를 포함하는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
- 제 25 항에 있어서, 상기 회로층을 형성하는 단계는,솔더볼 안착 패드 및 상기 솔더볼 안착 패드와 상기 제 2 반도체 칩의 본딩 패드를 연결시키기 위한 도전 패턴을 갖는 테이프를 상기 BGA 패키지 상부에 부착하는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
- 제 25 항에 있어서, 상기 회로층을 형성하는 단계는,상기 제 2 반도체 칩의 본딩 패드의 형성과 동시에 솔더볼 안착 패드와, 솔더볼 안착 패드 및 본딩 패드를 연결하는 도전 패턴을 형성하는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
- 제 26 항에 있어서, 상기 최상부에 적층되는 BGA 패키지의 봉지체를 형성하는 단계는, 상기 제 2 칩 표면이 덮히도록 봉지체를 형성하는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
- 제 26 항에 있어서, 상기 솔더볼을 솔더링하는 단계 이후에, 상기 패키지와 패키지간을 연결하는 솔더볼을 밀봉제로 봉지하는 단계를 더 포함하는 것을 특징으로 하는 적층형 BGA 패키지의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030043574A KR100604821B1 (ko) | 2003-06-30 | 2003-06-30 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
US10/834,186 US7298033B2 (en) | 2003-06-30 | 2004-04-29 | Stack type ball grid array package and method for manufacturing the same |
JP2004178744A JP4703980B2 (ja) | 2003-06-30 | 2004-06-16 | 積層型ボールグリッドアレイパッケージ及びその製造方法 |
US11/976,253 US7939924B2 (en) | 2003-06-30 | 2007-10-23 | Stack type ball grid array package and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030043574A KR100604821B1 (ko) | 2003-06-30 | 2003-06-30 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050002220A true KR20050002220A (ko) | 2005-01-07 |
KR100604821B1 KR100604821B1 (ko) | 2006-07-26 |
Family
ID=33536393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030043574A KR100604821B1 (ko) | 2003-06-30 | 2003-06-30 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7298033B2 (ko) |
JP (1) | JP4703980B2 (ko) |
KR (1) | KR100604821B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210040581A (ko) * | 2019-10-04 | 2021-04-14 | 삼성전자주식회사 | PoP 구조의 반도체 패키지 |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6853064B2 (en) * | 2003-05-12 | 2005-02-08 | Micron Technology, Inc. | Semiconductor component having stacked, encapsulated dice |
KR100604821B1 (ko) * | 2003-06-30 | 2006-07-26 | 삼성전자주식회사 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
KR100564585B1 (ko) * | 2003-11-13 | 2006-03-28 | 삼성전자주식회사 | 이중 스택된 bga 패키지 및 다중 스택된 bga 패키지 |
KR101313391B1 (ko) | 2004-11-03 | 2013-10-01 | 테세라, 인코포레이티드 | 적층형 패키징 |
US20080203552A1 (en) * | 2005-02-15 | 2008-08-28 | Unisemicon Co., Ltd. | Stacked Package and Method of Fabricating the Same |
FR2884049B1 (fr) * | 2005-04-01 | 2007-06-22 | 3D Plus Sa Sa | Module electronique de faible epaisseur comprenant un empilement de boitiers electroniques a billes de connexion |
SG130055A1 (en) | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
SG130066A1 (en) | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
JP5522561B2 (ja) | 2005-08-31 | 2014-06-18 | マイクロン テクノロジー, インク. | マイクロ電子デバイスパッケージ、積重ね型マイクロ電子デバイスパッケージ、およびマイクロ電子デバイスを製造する方法 |
US7485969B2 (en) * | 2005-09-01 | 2009-02-03 | Micron Technology, Inc. | Stacked microelectronic devices and methods for manufacturing microelectronic devices |
SG130073A1 (en) * | 2005-09-01 | 2007-03-20 | Micron Technology Inc | Stacked microelectronic devices and methods for manufacturing microelectronic devices |
US8058101B2 (en) * | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
US20070187836A1 (en) * | 2006-02-15 | 2007-08-16 | Texas Instruments Incorporated | Package on package design a combination of laminate and tape substrate, with back-to-back die combination |
US9202776B2 (en) * | 2006-06-01 | 2015-12-01 | Stats Chippac Ltd. | Stackable multi-chip package system |
US7339794B1 (en) * | 2006-10-24 | 2008-03-04 | Transcend Information, Inc. | Stacked memory module in mirror image arrangement and method for the same |
US8367471B2 (en) | 2007-06-15 | 2013-02-05 | Micron Technology, Inc. | Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies and stacked semiconductor devices |
US7972902B2 (en) * | 2007-07-23 | 2011-07-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a wafer including providing electrical conductors isolated from circuitry |
KR101185886B1 (ko) | 2007-07-23 | 2012-09-25 | 삼성전자주식회사 | 유니버설 배선 라인들을 포함하는 반도체 칩, 반도체패키지, 카드 및 시스템 |
US7985628B2 (en) * | 2007-12-12 | 2011-07-26 | Stats Chippac Ltd. | Integrated circuit package system with interconnect lock |
US8536692B2 (en) * | 2007-12-12 | 2013-09-17 | Stats Chippac Ltd. | Mountable integrated circuit package system with mountable integrated circuit die |
US8084849B2 (en) * | 2007-12-12 | 2011-12-27 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking |
US7781261B2 (en) * | 2007-12-12 | 2010-08-24 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking and anti-flash structure |
US20090152740A1 (en) * | 2007-12-17 | 2009-06-18 | Soo-San Park | Integrated circuit package system with flip chip |
US8247893B2 (en) * | 2007-12-27 | 2012-08-21 | Stats Chippac Ltd. | Mountable integrated circuit package system with intra-stack encapsulation |
US7800212B2 (en) * | 2007-12-27 | 2010-09-21 | Stats Chippac Ltd. | Mountable integrated circuit package system with stacking interposer |
JP5543072B2 (ja) | 2008-01-23 | 2014-07-09 | ピーエスフォー ルクスコ エスエイアールエル | 積層型半導体装置 |
SG155793A1 (en) * | 2008-03-19 | 2009-10-29 | Micron Technology Inc | Upgradeable and repairable semiconductor packages and methods |
US7919871B2 (en) * | 2008-03-21 | 2011-04-05 | Stats Chippac Ltd. | Integrated circuit package system for stackable devices |
US20090243069A1 (en) * | 2008-03-26 | 2009-10-01 | Zigmund Ramirez Camacho | Integrated circuit package system with redistribution |
KR20090130702A (ko) * | 2008-06-16 | 2009-12-24 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
US9293385B2 (en) * | 2008-07-30 | 2016-03-22 | Stats Chippac Ltd. | RDL patterning with package on package system |
US7750455B2 (en) * | 2008-08-08 | 2010-07-06 | Stats Chippac Ltd. | Triple tier package on package system |
JP2010056099A (ja) * | 2008-08-26 | 2010-03-11 | Hitachi Ltd | 半導体装置 |
KR101623880B1 (ko) | 2008-09-24 | 2016-05-25 | 삼성전자주식회사 | 반도체 패키지 |
US7859094B2 (en) * | 2008-09-25 | 2010-12-28 | Stats Chippac Ltd. | Integrated circuit package system for stackable devices |
KR20100121231A (ko) * | 2009-05-08 | 2010-11-17 | 삼성전자주식회사 | 회로패턴 들뜸 현상을 억제하는 패키지 온 패키지 및 그 제조방법 |
KR101624973B1 (ko) * | 2009-09-23 | 2016-05-30 | 삼성전자주식회사 | 패키지 온 패키지 타입의 반도체 패키지 및 그 제조방법 |
US8476775B2 (en) * | 2009-12-17 | 2013-07-02 | Stats Chippac Ltd. | Integrated circuit packaging system with embedded interconnect and method of manufacture thereof |
JP2011211077A (ja) * | 2010-03-30 | 2011-10-20 | Oki Semiconductor Co Ltd | 半導体積層パッケージ及びその製造方法 |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
KR101692441B1 (ko) * | 2010-08-25 | 2017-01-03 | 삼성전자주식회사 | 반도체 패키지 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
KR20120035297A (ko) * | 2010-10-05 | 2012-04-16 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8954948B2 (en) | 2011-06-17 | 2015-02-10 | Bae Systems Controls Inc. | Obsolescence tolerant flash memory architecture and physical building block (PBB) implementation |
KR101209475B1 (ko) | 2011-08-11 | 2012-12-07 | 앰코 테크놀로지 코리아 주식회사 | 인터포져를 이용한 반도체 패키지 |
US8872318B2 (en) | 2011-08-24 | 2014-10-28 | Tessera, Inc. | Through interposer wire bond using low CTE interposer with coarse slot apertures |
US8404520B1 (en) | 2011-10-17 | 2013-03-26 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US9768137B2 (en) * | 2012-04-30 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stud bump structure for semiconductor package assemblies |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
KR102053349B1 (ko) | 2013-05-16 | 2019-12-06 | 삼성전자주식회사 | 반도체 패키지 |
US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
US8883563B1 (en) | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
US9034696B2 (en) | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9087815B2 (en) | 2013-11-12 | 2015-07-21 | Invensas Corporation | Off substrate kinking of bond wire |
US9082753B2 (en) | 2013-11-12 | 2015-07-14 | Invensas Corporation | Severing bond wire by kinking and twisting |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US9911718B2 (en) | 2015-11-17 | 2018-03-06 | Invensas Corporation | ‘RDL-First’ packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
US10403594B2 (en) * | 2018-01-22 | 2019-09-03 | Toyota Motor Engineering & Manufacturing North America, Inc. | Hybrid bonding materials comprising ball grid arrays and metal inverse opal bonding layers, and power electronics assemblies incorporating the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100266693B1 (ko) * | 1998-05-30 | 2000-09-15 | 김영환 | 적층가능한 비지에이 반도체 칩 패키지 및 그 제조방법 |
US6297548B1 (en) * | 1998-06-30 | 2001-10-02 | Micron Technology, Inc. | Stackable ceramic FBGA for high thermal applications |
KR20000056804A (ko) | 1999-02-26 | 2000-09-15 | 윤종용 | 적층형 볼 그리드 어레이 패키지 |
JP2001077301A (ja) * | 1999-08-24 | 2001-03-23 | Amkor Technology Korea Inc | 半導体パッケージ及びその製造方法 |
JP3813402B2 (ja) * | 2000-01-31 | 2006-08-23 | 新光電気工業株式会社 | 半導体装置の製造方法 |
US6778404B1 (en) * | 2000-06-02 | 2004-08-17 | Micron Technology Inc | Stackable ball grid array |
KR100375168B1 (ko) | 2000-11-02 | 2003-03-08 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 그 제조방법 |
JP3798620B2 (ja) * | 2000-12-04 | 2006-07-19 | 富士通株式会社 | 半導体装置の製造方法 |
JP2003068740A (ja) * | 2001-08-30 | 2003-03-07 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2003086733A (ja) * | 2001-09-11 | 2003-03-20 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法およびそれを用いた電子機器 |
US6774475B2 (en) * | 2002-01-24 | 2004-08-10 | International Business Machines Corporation | Vertically stacked memory chips in FBGA packages |
US20030170450A1 (en) * | 2002-03-05 | 2003-09-11 | Stewart Steven L. | Attachment of surface mount devices to printed circuit boards using a thermoplastic adhesive |
JP2004172157A (ja) * | 2002-11-15 | 2004-06-17 | Shinko Electric Ind Co Ltd | 半導体パッケージおよびパッケージスタック半導体装置 |
US6700783B1 (en) * | 2003-01-15 | 2004-03-02 | Industrial Technology Research Institute | Three-dimensional stacked heat spreader assembly for electronic package and method for assembling |
US7388294B2 (en) * | 2003-01-27 | 2008-06-17 | Micron Technology, Inc. | Semiconductor components having stacked dice |
KR100604821B1 (ko) * | 2003-06-30 | 2006-07-26 | 삼성전자주식회사 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
-
2003
- 2003-06-30 KR KR1020030043574A patent/KR100604821B1/ko active IP Right Grant
-
2004
- 2004-04-29 US US10/834,186 patent/US7298033B2/en not_active Expired - Lifetime
- 2004-06-16 JP JP2004178744A patent/JP4703980B2/ja not_active Expired - Lifetime
-
2007
- 2007-10-23 US US11/976,253 patent/US7939924B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210040581A (ko) * | 2019-10-04 | 2021-04-14 | 삼성전자주식회사 | PoP 구조의 반도체 패키지 |
Also Published As
Publication number | Publication date |
---|---|
US20080042253A1 (en) | 2008-02-21 |
US20040262734A1 (en) | 2004-12-30 |
JP2005026680A (ja) | 2005-01-27 |
KR100604821B1 (ko) | 2006-07-26 |
US7939924B2 (en) | 2011-05-10 |
US7298033B2 (en) | 2007-11-20 |
JP4703980B2 (ja) | 2011-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100604821B1 (ko) | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 | |
KR100546374B1 (ko) | 센터 패드를 갖는 적층형 반도체 패키지 및 그 제조방법 | |
US6803254B2 (en) | Wire bonding method for a semiconductor package | |
JP4808408B2 (ja) | マルチチップパッケージ、これに使われる半導体装置及びその製造方法 | |
US7061125B2 (en) | Semiconductor package with pattern leads and method for manufacturing the same | |
US7763964B2 (en) | Semiconductor device and semiconductor module using the same | |
JP2000216281A (ja) | 樹脂封止型半導体装置 | |
US5243497A (en) | Chip on board assembly | |
KR19990069438A (ko) | 칩 스택 패키지 | |
US20020063331A1 (en) | Film carrier semiconductor device | |
US6798055B2 (en) | Die support structure | |
JP3450477B2 (ja) | 半導体装置及びその製造方法 | |
JP3136274B2 (ja) | 半導体装置 | |
KR100592785B1 (ko) | 칩 스케일 패키지를 적층한 적층 패키지 | |
JP3466354B2 (ja) | 半導体装置 | |
KR0173930B1 (ko) | 리드 프레임을 이용한 볼 그리드 어레이 패키지 | |
KR100610917B1 (ko) | 반도체칩과 섭스트레이트 사이의 와이어 본딩 구조 및이를 이용한 반도체패키지, 그리고 그 반도체패키지의제조 방법 | |
KR100218633B1 (ko) | 캐리어 프레임이 장착된 볼 그리드 어레이 반도체 패키지 | |
KR20030040922A (ko) | 칩 스케일 패키지와 그 제조 방법 및 이를 적층하여구비된 적층 칩 스케일 패키지 | |
KR19980058483A (ko) | 적층형 멀티 칩 모듈 반도체 패키지 | |
JP3088391B2 (ja) | 半導体装置 | |
KR100708050B1 (ko) | 반도체패키지 | |
KR200283421Y1 (ko) | 칩 적층형 세라믹 패키지 소자 및 이를 적층한 패키지적층형 소자 | |
KR100279249B1 (ko) | 적층형패키지및그의제조방법 | |
JP3405718B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130701 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140630 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150630 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160630 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170630 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180629 Year of fee payment: 13 |