KR20040094732A - 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 - Google Patents

실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 Download PDF

Info

Publication number
KR20040094732A
KR20040094732A KR10-2004-7013253A KR20047013253A KR20040094732A KR 20040094732 A KR20040094732 A KR 20040094732A KR 20047013253 A KR20047013253 A KR 20047013253A KR 20040094732 A KR20040094732 A KR 20040094732A
Authority
KR
South Korea
Prior art keywords
silica
film
atom
component
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7013253A
Other languages
English (en)
Korean (ko)
Inventor
사쿠라이하루아키
아베코이치
에노모토카즈히로
노베시게루
Original Assignee
히다치 가세고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히다치 가세고교 가부시끼가이샤 filed Critical 히다치 가세고교 가부시끼가이샤
Publication of KR20040094732A publication Critical patent/KR20040094732A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Organic Insulating Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
KR10-2004-7013253A 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품 Ceased KR20040094732A (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00052025 2002-02-27
JP2002052025 2002-02-27
JP2002060615 2002-03-06
JPJP-P-2002-00060622 2002-03-06
JPJP-P-2002-00060620 2002-03-06
JPJP-P-2002-00060615 2002-03-06
JP2002060620 2002-03-06
JP2002060622 2002-03-06
JPJP-P-2002-00127012 2002-04-26
JP2002127012 2002-04-26
PCT/JP2003/002157 WO2003072668A1 (fr) 2002-02-27 2003-02-26 Composition permettant de former un film de revetement a base de silice, film de revetement a base de silice, procede de preparation associe et parties electroniques

Related Child Applications (3)

Application Number Title Priority Date Filing Date
KR1020057015194A Division KR100820992B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020077005209A Division KR100795251B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020047019649A Division KR100819226B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Publications (1)

Publication Number Publication Date
KR20040094732A true KR20040094732A (ko) 2004-11-10

Family

ID=27767938

Family Applications (4)

Application Number Title Priority Date Filing Date
KR10-2004-7013253A Ceased KR20040094732A (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020057015194A Expired - Fee Related KR100820992B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020077005209A Expired - Fee Related KR100795251B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020047019649A Expired - Fee Related KR100819226B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020057015194A Expired - Fee Related KR100820992B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020077005209A Expired - Fee Related KR100795251B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
KR1020047019649A Expired - Fee Related KR100819226B1 (ko) 2002-02-27 2003-02-26 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품

Country Status (7)

Country Link
US (1) US7358300B2 (cg-RX-API-DMAC7.html)
JP (3) JP4151579B2 (cg-RX-API-DMAC7.html)
KR (4) KR20040094732A (cg-RX-API-DMAC7.html)
CN (2) CN1320073C (cg-RX-API-DMAC7.html)
AU (1) AU2003211343A1 (cg-RX-API-DMAC7.html)
TW (3) TW200400237A (cg-RX-API-DMAC7.html)
WO (1) WO2003072668A1 (cg-RX-API-DMAC7.html)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744077B2 (ja) * 2003-12-18 2011-08-10 京セラ株式会社 シロキサンポリマ皮膜形成方法および光導波路の作製方法
JP2005181871A (ja) * 2003-12-22 2005-07-07 Kyocera Corp 光導波路基板
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US20060047034A1 (en) * 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
JP2006213908A (ja) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の形成方法、シリカ系被膜、及び、電子部品
US20080260956A1 (en) * 2004-12-21 2008-10-23 Haruaki Sakurai Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
JP2007031697A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 被アルカリ処理被膜形成用組成物、被アルカリ処理被膜及びその製造方法、積層体、反射防止膜、並びに電子部品
JP2007031696A (ja) * 2005-06-10 2007-02-08 Hitachi Chem Co Ltd 樹脂組成物、シリカ系被膜及びその製造方法、積層体、並びに、電子部品
JP2007241018A (ja) * 2006-03-10 2007-09-20 Epson Toyocom Corp 全反射ミラー
JP5127277B2 (ja) * 2007-04-05 2013-01-23 新日鉄住金マテリアルズ株式会社 表面平坦性絶縁膜形成用塗布溶液、表面平坦性絶縁膜被覆基材、及び表面平坦性絶縁膜被覆基材の製造方法
WO2010065169A1 (en) * 2008-12-05 2010-06-10 E. I. Du Pont De Nemours And Company Self-assembled silica condensates
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US20110232677A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
JP2012049300A (ja) * 2010-08-26 2012-03-08 Nippon Zeon Co Ltd 半導体素子基板
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US9273215B2 (en) * 2012-10-30 2016-03-01 Rohm And Haas Electronic Materials Llc Adhesion promoter
US9196849B2 (en) * 2013-01-09 2015-11-24 Research & Business Foundation Sungkyunkwan University Polymer/inorganic multi-layer encapsulation film
KR101506801B1 (ko) * 2013-08-19 2015-03-30 성균관대학교산학협력단 고강도 저유전 플라즈마 중합체 박막 및 그 제조 방법
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
US9153357B1 (en) * 2014-03-27 2015-10-06 Rohm And Haas Electronic Materials Llc Adhesion promoter
JP6451376B2 (ja) * 2015-01-20 2019-01-16 三菱マテリアル株式会社 低屈折率膜形成用液組成物
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US11747341B2 (en) 2019-03-04 2023-09-05 Waters Technologies Corporation Methods of use for low-bind polypropylene plates and vials
US11635717B2 (en) * 2021-02-12 2023-04-25 Canon Kabushiki Kaisha Electrophotographic member and method for manufacturing the same, thermal fixing apparatus, and electrophotographic image forming apparatus

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2914427A1 (de) * 1979-04-10 1980-10-23 Bayer Ag Beschichtung fuer thermoplasten
US5820923A (en) * 1992-11-02 1998-10-13 Dow Corning Corporation Curing silica precursors by exposure to nitrous oxide
WO1996000758A1 (en) * 1994-06-30 1996-01-11 Hitachi Chemical Company, Ltd. Material for forming silica-base coated insulation film, process for producing the material, silica-base insulation film, semiconductor device, and process for producing the device
JP3824334B2 (ja) 1995-08-07 2006-09-20 東京応化工業株式会社 シリカ系被膜形成用塗布液及び被膜形成方法
DE69724494T2 (de) * 1996-02-28 2004-07-01 Nippon Shokubai Co., Ltd. Verfahren zur kontinuierlichen Herstellung eines beschichteten Filmes
US5880187A (en) * 1996-04-24 1999-03-09 Toyota Jidosha Kabushiki Kaisha Top coating compositions
JP3984292B2 (ja) * 1996-06-24 2007-10-03 触媒化成工業株式会社 透明被膜形成用塗布液、対明被膜付基材およびその用途
EP0887392B1 (en) * 1996-12-13 2002-06-12 Matsushita Electric Works, Ltd. Silicone emulsion coating composition and processes for the preparation thereof
JP4321686B2 (ja) 1998-04-24 2009-08-26 旭化成株式会社 有機−無機複合体および多孔質ケイ素酸化物の製造方法
JPH11322992A (ja) 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
JP2000049155A (ja) 1998-07-31 2000-02-18 Hitachi Chem Co Ltd 半導体装置
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
JP2000299316A (ja) * 1999-04-12 2000-10-24 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001002994A (ja) * 1999-06-24 2001-01-09 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001055554A (ja) * 1999-08-20 2001-02-27 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US20040253462A1 (en) * 1999-09-16 2004-12-16 Hitachi Chemical Co., Ltd. Composition, methods for forming low-permittivity film using the composition, low-permittivity film, and electronic part having the low-permittivity film
TWI260332B (en) 1999-09-16 2006-08-21 Hitachi Chemical Co Ltd Compositions, methods of forming low dielectric coefficient film using the composition, low dielectric coefficient films, and electronic components having the film
JP2001098218A (ja) * 1999-09-28 2001-04-10 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品
JP2001351911A (ja) 2000-04-03 2001-12-21 Ulvac Japan Ltd 多孔質ｓｏｇ膜の作製方法
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP4574054B2 (ja) 2000-04-28 2010-11-04 三井化学株式会社 撥水性多孔質シリカ、その製造方法および用途
TW524883B (en) * 2000-05-22 2003-03-21 Jsr Corp Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film
JP2002020689A (ja) 2000-07-07 2002-01-23 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4697363B2 (ja) * 2000-08-21 2011-06-08 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US6947651B2 (en) * 2001-05-10 2005-09-20 Georgia Tech Research Corporation Optical waveguides formed from nano air-gap inter-layer dielectric materials and methods of fabrication thereof
JP2003131001A (ja) * 2001-05-25 2003-05-08 Shipley Co Llc 多孔性光学物質
JP2003041191A (ja) * 2001-07-30 2003-02-13 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4972834B2 (ja) * 2001-08-28 2012-07-11 日立化成工業株式会社 シロキサン樹脂
JP2003064307A (ja) * 2001-08-28 2003-03-05 Hitachi Chem Co Ltd シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
CA2467703A1 (en) * 2001-11-21 2003-06-05 University Of Massachusetts Mesoporous materials and methods
JP3702842B2 (ja) 2001-12-04 2005-10-05 日立化成工業株式会社 シリカ系被膜形成用組成物、シリカ系被膜、シリカ系被膜の製造方法及び電子部品
US7381442B2 (en) * 2002-04-10 2008-06-03 Honeywell International Inc. Porogens for porous silica dielectric for integral circuit applications
JP2006500769A (ja) 2002-09-20 2006-01-05 ハネウェル・インターナショナル・インコーポレーテッド 低ｋ材料用の中間層接着促進剤

Also Published As

Publication number Publication date
KR20050008780A (ko) 2005-01-21
WO2003072668A1 (fr) 2003-09-04
JP2008297550A (ja) 2008-12-11
CN1639283A (zh) 2005-07-13
KR100795251B1 (ko) 2008-01-15
AU2003211343A1 (en) 2003-09-09
TWI297718B (cg-RX-API-DMAC7.html) 2008-06-11
KR20050095788A (ko) 2005-09-30
TWI304434B (cg-RX-API-DMAC7.html) 2008-12-21
KR20070038574A (ko) 2007-04-10
JP2008195945A (ja) 2008-08-28
TW200514828A (en) 2005-05-01
TW200400237A (en) 2004-01-01
US7358300B2 (en) 2008-04-15
TW200600557A (en) 2006-01-01
KR100820992B1 (ko) 2008-04-10
KR100819226B1 (ko) 2008-04-02
CN100491486C (zh) 2009-05-27
CN1320073C (zh) 2007-06-06
US20050119394A1 (en) 2005-06-02
CN1637097A (zh) 2005-07-13
JP4151579B2 (ja) 2008-09-17
TWI297717B (cg-RX-API-DMAC7.html) 2008-06-11
JPWO2003072668A1 (ja) 2005-06-23
JP4169088B2 (ja) 2008-10-22

Similar Documents

Publication Publication Date Title
KR100819226B1 (ko) 실리카계 피막형성용 조성물, 실리카계 피막 및 그제조방법 및 전자부품
JP3674041B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2003064307A (ja) シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP3966026B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP4110797B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US7687590B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP2003171616A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US7682701B2 (en) Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP4110796B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP5143335B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2008050610A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその製造方法、並びに電子部品
JP5143334B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005136429A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105283A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105281A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2005105282A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2004277502A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法並びにシリカ系被膜を備える電子部品
JP2003253203A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP3900915B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2007291167A (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP4110798B2 (ja) シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2003174023A (ja) 層間絶縁膜形成用組成物、層間絶縁膜の製造方法及び電子部品
JP2004189969A (ja) シリカ系被膜、シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
JP2005042123A (ja) シリカ系被膜形成用組成物、シリカ系被膜及びその形成方法、並びにシリカ系被膜を備える電子部品
JP2007158356A (ja) 被膜、被膜形成用塗布液、被膜の製造方法及びその被膜を有する電子部品

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20040825

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20041203

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20050818

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20060410

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20061129

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20060410

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20070228

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20061129

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20071217

Appeal identifier: 2007101002330

Request date: 20070228

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20070305

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20070330

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20070228

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20060724

Patent event code: PB09011R02I

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20070228

Effective date: 20071217

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20071217

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20070228

Decision date: 20071217

Appeal identifier: 2007101002330