KR20040048423A - 경화성 오가노폴리실록산 조성물, 당해 조성물의 경화생성물의 용도 및 반도체 장치 - Google Patents
경화성 오가노폴리실록산 조성물, 당해 조성물의 경화생성물의 용도 및 반도체 장치 Download PDFInfo
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- KR20040048423A KR20040048423A KR10-2004-7005795A KR20047005795A KR20040048423A KR 20040048423 A KR20040048423 A KR 20040048423A KR 20047005795 A KR20047005795 A KR 20047005795A KR 20040048423 A KR20040048423 A KR 20040048423A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
실시예 형태 | 실시예 | 비교 실시예 | |||
1 | 2 | 1 | 2 | 3 | |
항목 | |||||
경화성 오가노폴리실록산 조성물굴절률(%) | 1.54 | 1.53 | 1.41 | 1.54 | 1.54 |
광투과율(%) | 100 | 100 | 100 | 100 | 76 |
경화 생성물굴절률(%) | 1.54 | 1.53 | 1.41 | 1.54 | 1.54 |
광투과율(%) | 100 | 100 | 97 | 92 | 69 |
UV 투과율(%) | 0 | 0 | 21 | 0 | 0 |
반도체 장치 신뢰도평가(방법 1)발광출력 상대치(%) | 100 | 100 | 99 | 98 | 95 |
평가(방법 2)발광출력 상대치(%) | 100 | 100 | 98 | 97 | 93 |
Claims (9)
- (A) 분자당 두개 이상의 규소 결합된 알케닐 그룹을 갖고 규소 결합된 아릴 그룹을 갖는 오가노폴리실록산, (B) 분자당 두개 이상의 규소 결합된 수소원자를 갖는 오가노폴리실록산 및 (C) 백금의 오가노실록산 올리고머 착체를 포함하고, 여기서, i) 성분(A) 중의 규소 결합된 유기 그룹 전체에 대한 규소 결합된 아릴 그룹의 함량이 40mol% 이상이고, ii) 성분(C)의 오가노실록산 올리고머가 a) 분자당 규소원자수가 8개 이하이고, b) 규소 결합된 알케닐 그룹 및 c) 규소 결합된 아릴 그룹을 갖는 것을 특징으로 하는 경화성 오가노폴리실록산 조성물.
- 제1항에 있어서, 성분(C)의 오가노실록산 올리고머가 화학식 1임을 특징으로 하는 조성물.화학식 1상기식에서,m은 0 내지 6의 정수이고,R은 각각 독립적으로 동일하거나 상이한 일가 탄화수소 그룹이고, 단, i) 하나 이상의 R은 알케닐 그룹이고 ii) 하나 이상의 R은 아릴 그룹이다.
- 제1항에 있어서, 성분(C)의 오가노실록산 올리고머가 화학식 2임을 특징으로 하는 조성물.화학식 2상기식에서,m은 0 내지 6의 정수이고,Rl은 각각 독립적으로 알케닐 그룹이고,R2는 독립적으로 동일하거나 상이한 일가 탄화수소 그룹이고, 단, 하나 이상의 R2는 아릴 그룹이다.
- 제1항에 있어서, 성분(C)의 오가노실록산 올리고머가 1,3-디메틸-1,3-디페닐-1,3-디비닐디실록산임을 특징으로 하는 조성물.
- 제1항 내지 제4항 중의 어느 한 항에 있어서, 가시광의 귤절률이 1.5 이상이고, 광투과율이 80% 이상임을 특징으로 하는 조성물.
- 제1항 내지 제4항 중의 어느 한 항에 있어서, 자외선 투과율이 10% 이하임을 특징으로 하는 조성물.
- 제1항 내지 제4항 중의 어느 한 항의 조성물의 경화 생성물에 의해 반도체 소자가 피복되어 있음을 특징으로 하는 반도체 장치.
- 제7항에 있어서, 다이오드, 발광 다이오드, 트랜지스터, 다이리스터, 포토커플러, 전하 결합 장치, 모놀리틱 집적 회로, 혼성 집적 회로, 대규모 집적 장치 및 초대규모 집적 장치로부터 선택된 장치.
- 제1항 내지 제4항 중의 어느 한 항의 조성물의 경화 생성물의 전기 또는 전자 부품용 접착제, 포팅 제제(potting agent), 보호 피복제 또는 언더필러(underfiller)로서의 용도.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001322138A JP4040858B2 (ja) | 2001-10-19 | 2001-10-19 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JPJP-P-2001-00322138 | 2001-10-19 | ||
PCT/JP2002/010499 WO2003035763A1 (en) | 2001-10-19 | 2002-10-09 | Curable organopolysiloxane composition, use of the cured product of the composition, and semiconductor device |
Publications (2)
Publication Number | Publication Date |
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KR20040048423A true KR20040048423A (ko) | 2004-06-09 |
KR100909575B1 KR100909575B1 (ko) | 2009-07-29 |
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KR1020047005795A KR100909575B1 (ko) | 2001-10-19 | 2002-10-09 | 경화성 오가노폴리실록산 조성물, 당해 조성물의 경화생성물의 용도 및 반도체 장치 |
Country Status (7)
Country | Link |
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US (2) | US7271232B2 (ko) |
EP (1) | EP1442081B1 (ko) |
JP (1) | JP4040858B2 (ko) |
KR (1) | KR100909575B1 (ko) |
DE (1) | DE60223832T2 (ko) |
TW (1) | TWI253460B (ko) |
WO (1) | WO2003035763A1 (ko) |
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JP6512181B2 (ja) * | 2016-06-23 | 2019-05-15 | 信越化学工業株式会社 | フォトカプラー一次封止用熱硬化性シリコーン樹脂組成物、該組成物で封止されたフォトカプラー及び該フォトカプラーを有する光半導体装置 |
CN109642079B (zh) * | 2016-08-26 | 2022-04-05 | 信越化学工业株式会社 | 脱醇型室温固化性有机聚硅氧烷组合物和用该组合物的固化物密封的物品 |
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US5616632A (en) * | 1994-05-09 | 1997-04-01 | Shin-Etsu Chemical Co., Ltd. | Silicone compositions |
US6432137B1 (en) * | 1999-09-08 | 2002-08-13 | Medennium, Inc. | High refractive index silicone for use in intraocular lenses |
JP4040858B2 (ja) * | 2001-10-19 | 2008-01-30 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
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KR100943713B1 (ko) * | 2006-10-16 | 2010-02-23 | 롬 앤드 하아스 컴패니 | 내열성 아릴 폴리실록산 조성물 |
US8455605B2 (en) | 2009-12-31 | 2013-06-04 | Cheil Industries, Inc. | Resin composition for transparent encapsulation material and electronic device formed using the same |
KR20170003711U (ko) | 2016-04-18 | 2017-10-26 | 우성화학(주) | 김 양식용 부구 |
Also Published As
Publication number | Publication date |
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US7763697B2 (en) | 2010-07-27 |
DE60223832T2 (de) | 2008-10-30 |
KR100909575B1 (ko) | 2009-07-29 |
US20040241927A1 (en) | 2004-12-02 |
DE60223832D1 (de) | 2008-01-10 |
US20070273051A1 (en) | 2007-11-29 |
US7271232B2 (en) | 2007-09-18 |
JP2003128922A (ja) | 2003-05-08 |
EP1442081B1 (en) | 2007-11-28 |
TWI253460B (en) | 2006-04-21 |
EP1442081A1 (en) | 2004-08-04 |
JP4040858B2 (ja) | 2008-01-30 |
WO2003035763A1 (en) | 2003-05-01 |
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