DE60223832D1 - Härtbare organopolysiloxanzusammensetzung, verwendung des gehärteten produkts der zusammensetzung und halbleitervorrichtung - Google Patents
Härtbare organopolysiloxanzusammensetzung, verwendung des gehärteten produkts der zusammensetzung und halbleitervorrichtungInfo
- Publication number
- DE60223832D1 DE60223832D1 DE60223832T DE60223832T DE60223832D1 DE 60223832 D1 DE60223832 D1 DE 60223832D1 DE 60223832 T DE60223832 T DE 60223832T DE 60223832 T DE60223832 T DE 60223832T DE 60223832 D1 DE60223832 D1 DE 60223832D1
- Authority
- DE
- Germany
- Prior art keywords
- composition
- semiconductor device
- cured product
- hardenable organopolysiloxane
- hardenable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001322138A JP4040858B2 (ja) | 2001-10-19 | 2001-10-19 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP2001322138 | 2001-10-19 | ||
PCT/JP2002/010499 WO2003035763A1 (en) | 2001-10-19 | 2002-10-09 | Curable organopolysiloxane composition, use of the cured product of the composition, and semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60223832D1 true DE60223832D1 (de) | 2008-01-10 |
DE60223832T2 DE60223832T2 (de) | 2008-10-30 |
Family
ID=19139232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60223832T Expired - Lifetime DE60223832T2 (de) | 2001-10-19 | 2002-10-09 | Härtbare organopolysiloxanzusammensetzung, verwendung des gehärteten produkts der zusammensetzung und halbleitervorrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US7271232B2 (de) |
EP (1) | EP1442081B1 (de) |
JP (1) | JP4040858B2 (de) |
KR (1) | KR100909575B1 (de) |
DE (1) | DE60223832T2 (de) |
TW (1) | TWI253460B (de) |
WO (1) | WO2003035763A1 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4040858B2 (ja) * | 2001-10-19 | 2008-01-30 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
TW200427111A (en) * | 2003-03-12 | 2004-12-01 | Shinetsu Chemical Co | Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device |
KR100949053B1 (ko) * | 2003-07-28 | 2010-03-25 | 다우 코닝 코포레이션 | 패턴 형성된 실리콘 층의 에칭방법 |
JP4908736B2 (ja) | 2003-10-01 | 2012-04-04 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
JP2006073950A (ja) | 2004-09-06 | 2006-03-16 | Kansai Electric Power Co Inc:The | 高耐熱半導体装置 |
JP5392805B2 (ja) * | 2005-06-28 | 2014-01-22 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン樹脂組成物および光学部材 |
JP2007258317A (ja) * | 2006-03-22 | 2007-10-04 | Shin Etsu Chem Co Ltd | 半導体装置の製造方法 |
JP5060074B2 (ja) * | 2006-05-11 | 2012-10-31 | 東レ・ダウコーニング株式会社 | 接着促進剤、硬化性オルガノポリシロキサン組成物、および半導体装置 |
JP5202822B2 (ja) | 2006-06-23 | 2013-06-05 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
CN101506969B (zh) | 2006-08-22 | 2011-08-31 | 三菱化学株式会社 | 半导体器件用部材、以及半导体器件用部材形成液和半导体器件用部材的制造方法、以及使用该方法制造的半导体器件用部材形成液、荧光体组合物、半导体发光器件、照明装置和图像显示装置 |
JP5148088B2 (ja) | 2006-08-25 | 2013-02-20 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
US20100019399A1 (en) * | 2006-09-29 | 2010-01-28 | Masashi Kimura | Polyorganosiloxane composition |
TWI361205B (en) * | 2006-10-16 | 2012-04-01 | Rohm & Haas | Heat stable aryl polysiloxane compositions |
US8029904B2 (en) * | 2006-12-01 | 2011-10-04 | Rohm And Haas Company | Aryl (thio)ether aryl polysiloxane composition and methods for making and using same |
US20080160317A1 (en) * | 2006-12-29 | 2008-07-03 | Deborah Ann Haitko | Optoelectronic device |
US8017246B2 (en) * | 2007-11-08 | 2011-09-13 | Philips Lumileds Lighting Company, Llc | Silicone resin for protecting a light transmitting surface of an optoelectronic device |
US8629222B2 (en) | 2008-03-28 | 2014-01-14 | Mitsubishi Chemical Corporation | Curable polysiloxane composition, and polysiloxane cured product, optical member, member for aerospace industry, semiconductor light-emitting device, illuminating device and image display device using the same |
JP2009284618A (ja) * | 2008-05-21 | 2009-12-03 | Sharp Corp | フォトカプラ及びスイッチング電源回路 |
JP5469874B2 (ja) * | 2008-09-05 | 2014-04-16 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置 |
US8946353B2 (en) | 2008-10-31 | 2015-02-03 | Dow Corning Toray Co. Ltd. | Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device |
JP4862032B2 (ja) * | 2008-12-05 | 2012-01-25 | 信越化学工業株式会社 | 高屈折率を有する硬化物を与える付加硬化型シリコーン組成物、及び該組成物からなる光学素子封止材 |
KR101030019B1 (ko) | 2009-12-31 | 2011-04-20 | 제일모직주식회사 | 봉지재용 투광성 수지 및 이를 포함하는 전자 소자 |
JP2011219597A (ja) * | 2010-04-08 | 2011-11-04 | Nitto Denko Corp | シリコーン樹脂シート |
JP4911805B2 (ja) * | 2010-06-24 | 2012-04-04 | 積水化学工業株式会社 | 光半導体装置用封止剤及びそれを用いた光半導体装置 |
TWI483995B (zh) | 2010-08-18 | 2015-05-11 | Cheil Ind Inc | 聚有機矽氧烷與由該聚有機矽氧烷獲得之封裝材料以及包含該封裝材料之電子元件 |
TWI435914B (zh) | 2010-12-31 | 2014-05-01 | Eternal Chemical Co Ltd | 可固化之有機聚矽氧烷組合物及其製法 |
US9045639B2 (en) | 2010-12-31 | 2015-06-02 | Eternal Materials Co., Ltd. | Curable composition and method for manufacturing the same |
US8895662B2 (en) | 2010-12-31 | 2014-11-25 | Eternal Chemical Co., Ltd. | Curable composition and method for manufacturing the same |
JP5522111B2 (ja) | 2011-04-08 | 2014-06-18 | 信越化学工業株式会社 | シリコーン樹脂組成物及び当該組成物を使用した光半導体装置 |
WO2012150850A2 (ko) * | 2011-05-04 | 2012-11-08 | 주식회사 엘지화학 | 경화성 조성물 |
JPWO2012157330A1 (ja) * | 2011-05-17 | 2014-07-31 | 積水化学工業株式会社 | 光半導体装置用封止剤及び光半導体装置 |
KR101493131B1 (ko) * | 2011-11-25 | 2015-02-13 | 주식회사 엘지화학 | 오가노폴리실록산 |
CN103987787B (zh) * | 2011-11-25 | 2016-08-24 | Lg化学株式会社 | 可固化组合物 |
WO2013077700A1 (ko) * | 2011-11-25 | 2013-05-30 | 주식회사 엘지화학 | 경화성 조성물 |
CN103987786B (zh) * | 2011-11-25 | 2018-06-08 | Lg化学株式会社 | 可固化组合物 |
EP2784105B1 (de) * | 2011-11-25 | 2017-05-10 | LG Chem, Ltd. | Verfahren zur herstellung von organopolysiloxan |
KR101560036B1 (ko) * | 2011-11-25 | 2015-10-15 | 주식회사 엘지화학 | 경화성 조성물 |
EP2878633B1 (de) * | 2012-07-27 | 2020-12-30 | LG Chem, Ltd. | Härtungszusammensetzung |
JP5779155B2 (ja) * | 2012-08-28 | 2015-09-16 | 株式会社東芝 | 半導体装置 |
US9470395B2 (en) | 2013-03-15 | 2016-10-18 | Abl Ip Holding Llc | Optic for a light source |
WO2014183113A2 (en) | 2013-05-10 | 2014-11-13 | Abl Ip Holding Llc | Silicone optics |
KR101611009B1 (ko) | 2013-11-07 | 2016-04-08 | 제일모직주식회사 | 코어-쉘 미립자, 그 제조방법 및 이를 이용한 확산필름 |
DE102015101748A1 (de) | 2015-02-06 | 2016-08-11 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement mit einem Werkstoff umfassend Epoxysilan-modifiziertes Polyorganosiloxan |
US9416273B1 (en) | 2015-04-30 | 2016-08-16 | Eternal Materials Co., Ltd. | Curable composition and method for manufacturing the same |
JP6445947B2 (ja) * | 2015-09-04 | 2018-12-26 | 株式会社東芝 | 光結合装置 |
KR200485988Y1 (ko) | 2016-04-18 | 2018-03-20 | 우성화학(주) | 김 양식용 부구 |
JP6512181B2 (ja) * | 2016-06-23 | 2019-05-15 | 信越化学工業株式会社 | フォトカプラー一次封止用熱硬化性シリコーン樹脂組成物、該組成物で封止されたフォトカプラー及び該フォトカプラーを有する光半導体装置 |
JP6922917B2 (ja) * | 2016-08-26 | 2021-08-18 | 信越化学工業株式会社 | 脱アルコール型室温硬化性オルガノポリシロキサン組成物及び該組成物の硬化物でシールされた物品 |
WO2020082359A1 (en) * | 2018-10-26 | 2020-04-30 | Elkem Silicones Shanghai Co., Ltd. | Silicone composition and method for additive manufacturing silicone elastomer article |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5616632A (en) * | 1994-05-09 | 1997-04-01 | Shin-Etsu Chemical Co., Ltd. | Silicone compositions |
US6432137B1 (en) * | 1999-09-08 | 2002-08-13 | Medennium, Inc. | High refractive index silicone for use in intraocular lenses |
JP4040858B2 (ja) * | 2001-10-19 | 2008-01-30 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
-
2001
- 2001-10-19 JP JP2001322138A patent/JP4040858B2/ja not_active Expired - Fee Related
-
2002
- 2002-10-09 EP EP02802006A patent/EP1442081B1/de not_active Expired - Lifetime
- 2002-10-09 WO PCT/JP2002/010499 patent/WO2003035763A1/en active IP Right Grant
- 2002-10-09 KR KR1020047005795A patent/KR100909575B1/ko active IP Right Grant
- 2002-10-09 US US10/492,569 patent/US7271232B2/en not_active Expired - Fee Related
- 2002-10-09 DE DE60223832T patent/DE60223832T2/de not_active Expired - Lifetime
- 2002-10-11 TW TW091123453A patent/TWI253460B/zh not_active IP Right Cessation
-
2007
- 2007-08-02 US US11/832,984 patent/US7763697B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7271232B2 (en) | 2007-09-18 |
US20040241927A1 (en) | 2004-12-02 |
EP1442081A1 (de) | 2004-08-04 |
JP2003128922A (ja) | 2003-05-08 |
DE60223832T2 (de) | 2008-10-30 |
WO2003035763A1 (en) | 2003-05-01 |
US7763697B2 (en) | 2010-07-27 |
TWI253460B (en) | 2006-04-21 |
EP1442081B1 (de) | 2007-11-28 |
KR100909575B1 (ko) | 2009-07-29 |
KR20040048423A (ko) | 2004-06-09 |
US20070273051A1 (en) | 2007-11-29 |
JP4040858B2 (ja) | 2008-01-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |