KR20040018426A - 반도체결정들을 강성지지물로 탄소도핑과 저항률제어 및열경사도제어에 의해 성장하기 위한 방법 및 장치 - Google Patents
반도체결정들을 강성지지물로 탄소도핑과 저항률제어 및열경사도제어에 의해 성장하기 위한 방법 및 장치 Download PDFInfo
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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Abstract
Description
Claims (24)
- 반절연성 갈륨비소(GaAs)재료를 도핑제인 탄소기체의 제어식 혼입에 의해 성장시키는 방법에 있어서,씨앗영역을 갖는 도가니를 제공하는 단계;씨앗결정을 도가니 내의 씨앗영역에 놓는 단계;GaAs원료를 도가니 속에 적재하는 단계;산화붕소(B2O3)재료를 도가니 속에 적재하는 단계;하부영역 및 상부영역을 갖는 앰풀을 제공하는 단계;씨앗결정, GaAs원료, 및 B2O3재료를 담고 있는 도가니를 앰플 내에 제공하는 단계;고체탄소물질을 앰풀의 도가니 외부 하부영역에 제공하는 단계;고체탄소물질 및 도가니를 담고 있는 앰풀을 진공 하에서 밀봉하는 단계;밀봉된 앰풀을 제어하는 방식으로 가열하여, GaAs원류가 용융되게 하고, 열이 고체탄소물질과 상호작용하여 B2O3재료를 통해 GaAs용융물과 상호작용하는 탄소기체를 생성하게 하는 단계; 및밀봉된 앰풀을 제어하는 방식으로 냉각시키는 단계를 포함하는 방법.
- 제1항에 있어서, 기설정된 량의 고체탄소물질을 선택하는 단계를 더 포함하는 방법.
- 제1항에 있어서, 고체탄소물질은 흑연덩어리를 포함하는 방법.
- 제1항에 있어서, 고체탄소물질은 흑연분말을 포함하는 방법.
- 제1항에 있어서, 고체탄소물질은 흑연뚜껑(graphite cap)을 포함하는 방법.
- 제1항에 있어서, 고체탄소물질은 흑연막대를 포함하는 방법.
- 제1항에 있어서, 고체탄소물질은 흑연 조각을 포함하는 방법.
- 반절연성 갈륨비소(GaAs)재료를 도핑제인 탄소기체의 제어식 혼입에 의해 성장시키는 장치에 있어서,씨앗영역을 갖는 도가니; 및하부영역 및 상부영역을 가지는 앰풀로서, 도가니가 앰풀 내에 제공되며, 고체탄소물질이 앰플의 도가니 바깥 하부영역에 제공되고, 고체탄소물질 및 도가니를 담고 있도록 진공 하에서 밀봉된 앰풀을 포함하는 장치.
- 제8항에 있어서, 고체탄소물질은 흑연분말을 포함하는 장치.
- 제8항에 있어서, 고체탄소물질은 흑연 조각을 포함하는 장치.
- 반절연성 갈륨비소(GaAs)재료를 도핑제인 탄소기체의 제어식 혼입에 의해 성장시키는 시스템에 있어서,씨앗결정을 내부에 가지는 씨앗영역을 갖는 도가니로서, GaAs원료와 산화붕소(B2O3)재료를 담고 있는 도가니;하부영역 및 상부영역을 가지는 앰풀로서, 도가니가 앰풀 내에 제공되며, 고체탄소물질이 앰플의 도가니 바깥 하부영역에 제공되고, 고체탄소물질 및 도가니를 담고 있도록 진공 하에서 밀봉된 앰풀; 및앰플을 위해 배치된 가열부를 포함하는 시스템.
- 제11항에 있어서, 고체탄소물질은 흑연분말을 포함하는 시스템.
- 제11항에 있어서, 고체탄소물질은 흑연 조각을 포함하는 시스템.
- 고체실린더를 VGF결정성장로의 바닥에 설치하는 단계;고체실린더를 저밀도절연재료로 채우는 단계;축상 중공코어를 저밀도절연재료의 중앙에 제공하는 단계; 및씨앗결정, 원료, 도가니, 및 석영실린더의 상단에 있는 도가니뚜껑을 담고 있는 밀봉된 석영앰풀을 축상의 중공코어가 앰플씨앗우물을 수용하고 도가니가 실린더에 의해 지지되도록 설치하는 단계를 포함하는 도가니 지지방법.
- 제14항에 있어서, 저밀도절연재료는 고체결정 속에 삽입되기 전에 복수개의 수평 방사상 열복사채널들에 의해 관통되는 도가니 지지방법.
- 제14항에 있어서, 수직고체실린더는 석영으로 이루어진 도가니 지지방법.
- 제14항에 있어서, 수직고체실린더는 실리콘탄화물로 이루어진 도가니 지지방법.
- 제14항에 있어서, 수직고체실린더는 세라믹은 도가니 지지방법.
- 제14항에 있어서, 저밀도절연재료는 세라믹섬유인 도가니 지지방법.
- 제14항에 있어서, 저밀도절연재료는 알루미나섬유(1,800℃)인 도가니 지지방법.
- 제14항에 있어서, 저밀도절연재료는 알루미나-실리카섬유(1,426℃)인 도가니지지방법.
- 제14항에 있어서, 저밀도절연재료는 지르코니아섬유(2,200℃)인 도가니 지지방법.
- 제15항에 있어서, 수평 방사상 열복사채널들은 1 평방인치의 단면적을 가지는 도가니 지지방법.
- VGF결정성장로의 바닥에 있는 고체실린더, 저밀도절연재료로 채워진 고체실린더, 저밀도절연재료의 중앙에 형성되어 앰풀의 씨앗우물을 수용하는 축상 중공코어, 및 중공를 포함하는 도가니 지지장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US30318901P | 2001-07-05 | 2001-07-05 | |
US60/303,189 | 2001-07-05 | ||
PCT/US2002/021195 WO2003005417A2 (en) | 2001-07-05 | 2002-07-03 | Method and apparatus for growing semiconductor crystals with a rigid support |
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KR20040018426A true KR20040018426A (ko) | 2004-03-03 |
KR100966182B1 KR100966182B1 (ko) | 2010-06-25 |
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KR1020047000105A KR100966182B1 (ko) | 2001-07-05 | 2002-07-03 | 반도체결정들을 강성 지지물로 탄소도핑과 저항률제어 및 열경사도제어에 의해 성장시키기 위한 방법 및 장치 |
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US (1) | US6896729B2 (ko) |
EP (2) | EP1456866B1 (ko) |
JP (3) | JP4324467B2 (ko) |
KR (1) | KR100966182B1 (ko) |
CN (4) | CN101407936A (ko) |
AU (1) | AU2002320277A1 (ko) |
CA (1) | CA2452542C (ko) |
WO (1) | WO2003005417A2 (ko) |
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JP5061728B2 (ja) * | 2007-05-30 | 2012-10-31 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
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CN101555620A (zh) * | 2008-04-07 | 2009-10-14 | Axt公司 | 晶体生长装置及方法 |
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2002
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- 2002-07-03 CN CNA028158652A patent/CN1543518A/zh active Pending
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100945668B1 (ko) * | 2008-12-11 | 2010-03-05 | (주)포티조 | Vgf법에 의한 갈륨비소 단결정 성장방법 |
Also Published As
Publication number | Publication date |
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JP2009051728A (ja) | 2009-03-12 |
KR100966182B1 (ko) | 2010-06-25 |
US6896729B2 (en) | 2005-05-24 |
EP2444531A2 (en) | 2012-04-25 |
EP1456866A4 (en) | 2008-08-20 |
WO2003005417A3 (en) | 2004-06-17 |
CN1543518A (zh) | 2004-11-03 |
JP4324467B2 (ja) | 2009-09-02 |
EP1456866A2 (en) | 2004-09-15 |
US20030037721A1 (en) | 2003-02-27 |
CN102220628A (zh) | 2011-10-19 |
EP1456866B1 (en) | 2012-06-13 |
JP5005651B2 (ja) | 2012-08-22 |
CN102797032A (zh) | 2012-11-28 |
CA2452542A1 (en) | 2003-01-16 |
JP2012126644A (ja) | 2012-07-05 |
CN101407936A (zh) | 2009-04-15 |
AU2002320277A1 (en) | 2003-01-21 |
JP2004534710A (ja) | 2004-11-18 |
WO2003005417A2 (en) | 2003-01-16 |
EP2444531A3 (en) | 2012-10-31 |
CA2452542C (en) | 2011-04-26 |
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