KR200373718Y1 - 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 - Google Patents

정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 Download PDF

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Publication number
KR200373718Y1
KR200373718Y1 KR20040026925U KR20040026925U KR200373718Y1 KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1 KR 20040026925 U KR20040026925 U KR 20040026925U KR 20040026925 U KR20040026925 U KR 20040026925U KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1
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KR
South Korea
Prior art keywords
reflector
esd
emitting diode
electrostatic discharge
light emitting
Prior art date
Application number
KR20040026925U
Other languages
English (en)
Korean (ko)
Inventor
박종호
Original Assignee
주식회사 티씨오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 티씨오 filed Critical 주식회사 티씨오
Priority to KR20040026925U priority Critical patent/KR200373718Y1/ko
Application granted granted Critical
Publication of KR200373718Y1 publication Critical patent/KR200373718Y1/ko
Priority to JP2005267552A priority patent/JP2006093697A/ja
Priority to CN 200510103400 priority patent/CN100543985C/zh
Priority to TW94132448A priority patent/TWI362762B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
KR20040026925U 2004-09-20 2004-09-20 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 KR200373718Y1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR20040026925U KR200373718Y1 (ko) 2004-09-20 2004-09-20 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드
JP2005267552A JP2006093697A (ja) 2004-09-20 2005-09-14 静電放電衝撃に対する保護機能が内蔵された高輝度発光ダイオード
CN 200510103400 CN100543985C (zh) 2004-09-20 2005-09-20 具有防静电放电冲击保护功能的高亮度发光二极管
TW94132448A TWI362762B (en) 2004-09-20 2005-09-20 High brighthess led with protective function of electrostatic damage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20040026925U KR200373718Y1 (ko) 2004-09-20 2004-09-20 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020040075944A Division KR100610270B1 (ko) 2004-09-22 2004-09-22 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드

Publications (1)

Publication Number Publication Date
KR200373718Y1 true KR200373718Y1 (ko) 2005-01-21

Family

ID=36234319

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20040026925U KR200373718Y1 (ko) 2004-09-20 2004-09-20 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드

Country Status (4)

Country Link
JP (1) JP2006093697A (zh)
KR (1) KR200373718Y1 (zh)
CN (1) CN100543985C (zh)
TW (1) TWI362762B (zh)

Cited By (1)

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KR20170009035A (ko) * 2015-07-15 2017-01-25 엘지이노텍 주식회사 발광 소자 패키지

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JP4789673B2 (ja) * 2005-10-27 2011-10-12 京セラ株式会社 発光素子収納用パッケージならびにこれを用いた光源および発光装置
TWI284433B (en) * 2006-02-23 2007-07-21 Novalite Optronics Corp Light emitting diode package and fabricating method thereof
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
JP2007329219A (ja) * 2006-06-07 2007-12-20 Nichia Chem Ind Ltd 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
US8044418B2 (en) 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
JP4882634B2 (ja) * 2006-09-26 2012-02-22 日亜化学工業株式会社 発光装置
JP5380774B2 (ja) 2006-12-28 2014-01-08 日亜化学工業株式会社 表面実装型側面発光装置及びその製造方法
DE102007001706A1 (de) 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
CN101247043B (zh) * 2007-02-15 2010-05-26 葳天科技股份有限公司 发光二极管电路组件
JP5233170B2 (ja) 2007-05-31 2013-07-10 日亜化学工業株式会社 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法
KR100870950B1 (ko) * 2007-11-19 2008-12-01 일진반도체 주식회사 발광다이오드 소자 및 그 제조 방법
JP5294741B2 (ja) * 2008-07-14 2013-09-18 日亜化学工業株式会社 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
JP5217800B2 (ja) 2008-09-03 2013-06-19 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
CN101373805B (zh) * 2008-10-17 2011-03-23 晶能光电（江西）有限公司 具有过压保护结构的发光二极管芯片
JP5280818B2 (ja) 2008-11-28 2013-09-04 シャープ株式会社 発光装置
JP5458910B2 (ja) 2009-02-24 2014-04-02 日亜化学工業株式会社 発光装置
JP5726409B2 (ja) 2009-07-01 2015-06-03 シャープ株式会社 発光装置および発光装置の製造方法
JP5471244B2 (ja) * 2009-09-29 2014-04-16 豊田合成株式会社 照明装置
JP5623062B2 (ja) * 2009-11-13 2014-11-12 シャープ株式会社 発光装置およびその製造方法
JP2011151268A (ja) 2010-01-22 2011-08-04 Sharp Corp 発光装置
KR101103674B1 (ko) 2010-06-01 2012-01-11 엘지이노텍 주식회사 발광 소자
JP5481277B2 (ja) * 2010-06-04 2014-04-23 シャープ株式会社 発光装置
CN102130278B (zh) * 2010-12-31 2013-04-03 昆山琉明光电有限公司 发光二极管封装
JP2012238830A (ja) * 2011-05-09 2012-12-06 Lumirich Co Ltd 発光ダイオード素子
CN102903803B (zh) * 2011-07-29 2015-03-25 展晶科技(深圳)有限公司 发光二极管封装结构的形成方法及其基座的形成方法
CN102916108B (zh) * 2011-08-05 2015-09-09 展晶科技(深圳)有限公司 发光二极管封装结构
CN103000782B (zh) * 2011-09-13 2016-09-07 展晶科技(深圳)有限公司 发光二极管封装结构
JP5940799B2 (ja) * 2011-11-22 2016-06-29 新光電気工業株式会社 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
CN103187485A (zh) * 2011-12-27 2013-07-03 展晶科技(深圳)有限公司 发光二极管的制造方法
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
DE102012107829B4 (de) * 2012-08-24 2024-01-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Bauelemente und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013110114A1 (de) * 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP5873886B2 (ja) * 2014-03-25 2016-03-01 アピックヤマダ株式会社 樹脂成形体の製造方法、及び、ｌｅｄパッケージの製造方法
JP5825390B2 (ja) * 2014-04-11 2015-12-02 日亜化学工業株式会社 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法
US9642206B2 (en) * 2014-11-26 2017-05-02 Ledengin, Inc. Compact emitter for warm dimming and color tunable lamp
CN109509745B (zh) * 2018-12-28 2023-09-22 捷捷半导体有限公司 一种用于G·fast低容放电管阵列

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170009035A (ko) * 2015-07-15 2017-01-25 엘지이노텍 주식회사 발광 소자 패키지
KR102408616B1 (ko) 2015-07-15 2022-06-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지

Also Published As

Publication number Publication date
CN1767189A (zh) 2006-05-03
JP2006093697A (ja) 2006-04-06
TWI362762B (en) 2012-04-21
CN100543985C (zh) 2009-09-23

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