KR200373718Y1 - High Brightness LED With Protective Function of Electrostatic Damage - Google Patents

High Brightness LED With Protective Function of Electrostatic Damage Download PDF

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KR200373718Y1
KR200373718Y1 KR20040026925U KR20040026925U KR200373718Y1 KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1 KR 20040026925 U KR20040026925 U KR 20040026925U KR 20040026925 U KR20040026925 U KR 20040026925U KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1
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reflector
light
esd
electrostatic discharge
chip
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KR20040026925U
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Korean (ko)
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박종호
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주식회사 티씨오
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode, configured for solving the problem of weakness with respect to electrostatic discharge impacts, in a chip of an InGaN/GaN-based light-emitting diode, which is a light source in an Al<SB>2</SB>O<SB>3</SB>substrate structure. <P>SOLUTION: The method of manufacturing a high-luminance light-emitting diode that is resistant to electrostatic discharge impact comprises soldering of an electrostatic-discharge-impact protective element on a lead frame with cream solder, followed by forming of a reflection cup, having a reflector on the surface thereof by means of transfer mold technique, using white TiO<SB>2</SB>-suspended thermosetting resin; die-bonding and wire-bonding the InGaN/GaN-based light-emitting chips on die pads for the light-emitting diodes interior of the reflection cup, having a reflector on the surface thereof; filling the inside of the reflection cup, having a reflector on the surface thereof with light-transmitting epoxy resin; and thereafter individuating through sawing or trimming and forming processes. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드{High Brightness LED With Protective Function of Electrostatic Damage} The protection against electrostatic discharge, high-brightness light-emitting diode built in shock {High Brightness LED With Protective Function of Electrostatic Damage}

본 고안은 정전기 방전(ESD) 충격 발생시 InGaN,GaN계 발광다이오드 칩(Chip)을 보호하기 위한 것으로서, 더욱 상세하게는 은도금을 한 다수열의 리드프레임의 정전기 방전(ESD) 충격 보호소자용 다이 패드면 바닥에 정전기 충격 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 크림솔더(Cleam Solder)로 실장한 후, 백색 열경화성수지(TiO 2 )로 트랜스퍼몰드(Transfer Mold)방식의 반사판(Reflector)을 만들어, 이 반사판 내부의 발광다이오드 다이패드(Die Pad)부에 InGaN, GaN계의 발광다이오드 칩을 다이 본딩·와이어 본딩을 하고, 반사판 내부에 광 투과 에폭시 수지를 채운 후 소윙(Sawing) 공정 또는 트리밍(Trimming)과 포밍(Forming)공정을 통하여 개별화함으로서 정전기 방전(ESD) 충격에 강한 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 The subject innovation is electrostatic discharge (ESD) shock in case of InGaN, GaN-based light emitting diode serves to protect the chip (Chip), more particularly to electrostatic discharge (ESD) shock shelter of the lead frame number of a silver-plated heat Edition die pad bottom surface in after mounting the static electricity attack discharge (ESD) shock protection device {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)} with cream solder (Cleam solder), the white heat-curable resin (TiO 2) as a transfer mold (transfer Mold) creating a method of the reflection plate (reflector), a light transmission epoxy resin to the reflector interior of the LED die pad (die pad) part die-bonding the InGaN, the LED chip of the GaN-based on-the wire bonding, and the inner reflector after filling sowing (Sawing) process or a trimming (trimming) and forming (forming) by individualized through the process of electrostatic discharge (ESD) shock strong electrostatic discharge (ESD) is a high-brightness built-in impact protection 광다이오드에 관한 것이다. It relates to a photodiode.

종래의 정전기 방전(ESD) 충격 보호용 발광다이오드의 구성은 도 1a, 1b에 도시된 바와 같다. Structure of a conventional electrostatic discharge (ESD) shock protective light-emitting diode is shown in Figure 1a, 1b.

도 1a는 플라스틱(열가소성)사출재질(92)로 구성되어진 표면에 반사판을 가진 반사컵(91)이 형성된 리드프레임(Lead Frame)과 전압을 인가하면 빛을 발산하는 InGaN, GaN계 칩(10)과, 상기 InGaN, GaN계 칩(10)에 전압을 인가하기 위한 도전성 금속재의 음극 및 양극 리드(4)(5)로 이루어지고, 상기 칩(10)은 음극 리드(4)의 끝단에 형성된 다이 패드(Die pad)상에 도전성 은(Ag) 접착제로 부착됨과 동시에, 양극 리드부분 끝단의 패드(Pad)부분에 정전압다이오드칩(Zener Diode Chip)(Z)을 은(Ag) 접착제로 부착함과 동시에 음극, 양극 리드(4)(5)의 끝단과 와이어(11)로 본딩되어 음극 및 양극 리드(4)(5) 사이에서 전기적으로 접속된 구성이다. Figure 1a is a reflective cup 91 is applied to a lead frame (Lead Frame) with voltage having a InGaN, GaN-based chip 10 that emits light with a reflector on the surface been composed of plastic (thermoplastic), the injection material 92 and the InGaN, is made of a negative electrode and a positive electrode lead (4) (5) of the conductive metal for applying a voltage to the GaN-based chip 10, the chip 10 is die-formed in the end of negative electrode lead 4 pads also attached to (Die pad) electrically conductive silver (Ag) as soon adhered with an adhesive at the same time, the constant-voltage diode chip to the pad (pad) portion of the anode lead portion end (Zener diode chip) to the (Z) is an adhesive agent (Ag) and at the same time bonded to the end of the wire 11 of the negative electrode, a positive electrode lead (4) (5) it is constructed is electrically connected between a negative electrode and a positive electrode lead (4) (5).

또한, 도 1b는 플라스틱(열가소성) 사출 재질(92)로 구성되어진 표면에 반사판을 가진 반사컵(91)이 형성된 리드프레임(Lead Frame)과, 전압을 인가하면 빛을 발산하는 InGaN, GaN계 칩(10)과, 상기 InGaN, GaN계 칩(10)에 전압을 인가하기 위한 도전성 금속재의 음극 및 양극 리드(4)(5)로 이루어지고, 정전압다이오드칩(Zener Diode Chip)(Z)을 음극 리드(4)의 끝단에 형성된 다이 패드(Die pad)상에 도전성 은(Ag) 접착제로 부착함과 동시에, InGaN, GaN계 발광다이오드칩(Chip)(10)을 골드범프(Au Bump), 또는 솔더범프(Solder Bump)로 정전압다이오드칩(Zener Diode Chip)(Z) 상부면에 부착한 후 음극, 양극 리드(4)(5)의 끝단과 와이어(11)로 본딩되어 음극 및 양극 리드 (4)(5) 사이에서 전기적으로 접속된 구성이다. Further, Fig. 1b is a plastic (thermoplastic) injection material leadframe (Lead Frame) and, when a voltage is applied to emit light, InGaN, GaN-based chip, the reflection cup 91 is formed with a reflective plate on the surface been composed of 92 10, the InGaN, is made of a negative electrode and a positive electrode lead (4) (5) of the conductive metal for applying a voltage to the GaN-based chip 10, the cathode of the zener diode chip (Zener diode chip) (Z) on the die pad (die pad) formed at the end of the lead (4) electrically conductive silver (Ag) attached with an adhesive, and at the same time, InGaN, a GaN-based light emitting diode chip (chip) (10) with gold bumps (Au bump), or solder bumps (solder bump) to the constant-voltage diode chip (Zener diode chip) (Z), are bonded to the end of the wire 11 in the after attaching to the upper surface a negative electrode, positive electrode lead 4, 5, a negative electrode and a positive electrode lead (4 ) it is constructed and electrically connected between (5).

이와 같은 2가지 형태(Model)의 기술처럼 공정 진행 후, 상기 칩(10)(Z)을 외부로부터 보호하기 위해 절연재질의 광투과에폭시(15)로 몰딩하되, 음극 및 양극 리드(4)(5)의 다른 끝단의 일부가 외부로 노출되도록 하여 외부에서 칩(10)으로 전압을 인가할 수 있도록 구성된다. After proceeding this way 2, as technology types (Model) process, such as, but molding of the chip (10) (Z) as a light-transmitting epoxy (15) of insulating material to protect it from the outside, a negative electrode and a positive electrode lead 4 ( 5) to ensure that the part exposed to the outside of the other end consists of externally applying a voltage to the chip (10).

외부로 노출된 발광다이오드의 음극 및 양극 리드(4)(5)를 사용하고자 하는 회로와 전기적으로 접속시키게 되면, 음극 및 양극 리드(4)(5)를 통해 칩(10)으로 전원이 인가됨으로써 광 반도체 소자인 칩(10)이 발광되어 기능을 수행할 수 있는 것이며, 몰딩(15)은 통상 투명에폭시수지(Epoxy)를 이용하여 작업하고, 발광다이오드칩(10)의 종류에 따라 녹색, 청색 또는 백색으로 제조된다. If you want to use a negative electrode and a positive electrode lead (4) (5) of the light emitting diodes exposed to the outside thereby connected to the circuit and electrically, with chip 10 via a negative electrode and a positive electrode lead (4) (5) it is powered by being optical semiconductor device chip 10 is the light emission will to perform the function, the molding 15 is generally transparent work using an epoxy resin (epoxy) and, green and blue, depending on the type of the LED chip 10 or it is made of white.

그러나 위와 같이 정전압다이오드칩(Zener Diode Chip)(Z)을 플라스틱 사출 재질(92)의 표면에 반사판(Refector)을 가진 반사컵(91) 내부에 실장한 구조는 InGaN, GaN계 발광다이오드(10)에서 방사하는 빛을 정전압다이오드(Zener Diode)가 빛을 흡수하거나 산란시킴으로서 방사 방향으로의 빛의 방사를 방해함으로서 최소 15%이상의 휘도가 저하되는 단점이 있다. However, the zener diode chip (Zener Diode Chip) (Z), the structure is InGaN, GaN-based light emitting diode 10 mounted within the reflection cup (91) with a reflector (Refector) on the surface of the plastic injection material (92) as above by absorbing the constant voltage to the light diode (Zener diode) to emit light in or interfere with the light emission of the radially sikimeuroseo scattering has the disadvantage that at least 15% of its luminance decreases.

또한, 열가소성 재질인 플라스틱사출재질(92)은 표면에 반사판을 가진 반사컵(91)의 재질로 사용하는데 고온의 발광다이오드의 제조 공정에서 변색 및 신뢰성 저하를 유발시키며, 열에 약한 특성 때문에 발광다이오드 칩(Chip)(10) 또는 정전압다이오드칩(Zener Diode Chip)(Z)을 저온으로 융착이 가능한 은(Ag)접착제를 이용하여 부착하는 방법으로만 제조하여야 하는 단점이 있어 공정상의 생산 능력을 떨어뜨리고 순전압(VF-Forward Voltage)을 증가시키는 문제점을 발생시키기도 한다. Further, the thermoplastic material of the plastic injection material 92 is a light emitting diode chip due to use of a material of the reflective cup 91, with a reflective plate on the surface sikimyeo causing discoloration and reliability degradation in the manufacturing process of the light emitting diode of high temperature, low property column (chip) (10) or the zener diode chip (Zener diode chip) (Z) there is a disadvantage that the fusing is possible (Ag) to be produced by the method of attaching with an adhesive only at a low temperature to drop the production capacity in the process they cause the problem occurs that increases the forward voltage (VF-Forward voltage).

또한, 열가소성 사출재질의 표면에 반사판을 가진 반사컵(91)부분에 광투과성에폭시수지(15)를 채움으로서 발광다이오드소자의 골드와이어(Gold Wire)의 전극을 단락시키는 문제가 있다. Further, by filling the light-transmitting epoxy resin 15 on the reflective cup (91) portion having a reflection plate on a surface of the thermoplastic injection molding material it has a problem of short-circuiting the electrodes of the gold wire (Gold Wire) of the light-emitting diode device.

본 고안은 종래의 InGaN, GaN계의 발광다이오드 소자가 지닌 정전기 방전(ESD) 충격에 매우 약한 제반 문제점을 해결하기 위한 것으로서, 수천 볼트의 정전기 방전(ESD) 충격이 발생할 시 InGaN, GaN계의 칩(Chip)에 직접적인 충격이 가해지지 않고 정전기 방전(ESD) 충격 발생으로 인한 불량률을 획기적으로 줄일 수 있으며, InGaN, GaN계의 발광다이오드 칩(Chip)을 은(Ag)수지(Epoxy)로 접착하지 않고 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있도록 하고, 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있는 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드를 제공하는데 있다. The subject innovation is the conventional InGaN, GaN-based light emitting diode elements having electrostatic discharge (ESD) as to correct a very light overall problem to impact upon the electrostatic discharge (ESD) shock of thousands of volts occur InGaN, GaN-based chip, not adhered to (chip) light emitting diode chip (chip) in direct without being impacted, and can significantly reduce the failure rate due to electrostatic discharge (ESD) shock, InGaN, GaN-based on a silver (Ag) resin (Epoxy) without yutek teak bonding a high temperature it is possible to work with (Eutectic bonding) method, improve the production capacity, and to lower the forward voltage (Forward voltage-Vf), will not interfere with the light emitted from the LED chip (chip) Since there is provided the high-brightness light-emitting diode built in the protection against electrostatic discharge (ESD) shock, which can improve the brightness of the LED.

본 고안의 다른 목적은 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 있는 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드를 제공하는데 있다. Another object of the present invention is the protection provided to the light emitting diode chip (Chip) electrostatic discharge (ESD) shock, which can be manufactured light-emitting diode device which does not have the problems caused by high temperature because it does not give a thermally stress (Stress) in to provide a built-in high-brightness light-emitting diode.

이러한 목적을 달성하기 위한 본 고안에 따른 LED광 반도체 소자는 은도금을 한 다수열의 리드프레임의 다이패드면 바닥에 정전기 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 크림솔더(Cleam Solder)로 실장한 후, TiO 2 계 백색 열경화성수지를 트랜스퍼몰드(Transfer Mold) 방식으로 사출하여 표면에 반사판(Reflector)을 가진 반사컵(91)을 만들고, 이 표면에 반사판(Reflector)을 가진 반사컵(91) 내부의 발광다이오드다이패드(Die Pad)부에 InGaN, GaN계의 발광다이오드 칩을 다이 본딩·와이어 본딩을 하고, 표면에 반사판을 가진 반사컵(91) 내부에 광 투과 에폭시 수지를 채운 후 소윙(Sawing)공정 또는 트리밍(Trimming)과 포밍공정(Forming)을 통하여 개별화하는 공정을 거쳐 제조된다. LED light according to the present invention to achieve this object the semiconductor device impact protection device to electrostatic discharge (ESD) on the bottom die pad side of the lead frame number by the silvered column {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode )} to a post, the surface, the TiO 2 based white thermosetting resin making the reflective cup (91) having a reflector (reflector) to the surface to be emitted to the transfer mold (transfer mold) system implemented in the cream solder (Cleam solder) reflector (reflector) a reflective cup 91, reflective cup 91 has a reflective plate on the surface of the LED chip to the die bonding, wire bonding, and the InGaN, GaN-based on the light-emitting diode die pad (die pad) inside with Full the light-transmitting epoxy resin therein is produced through a step of individualized through the sowing (Sawing) process or a trimming (trimming) and the forming step (forming).

도 1a는 종래의 정전압 다이오드(Zener Diode Chip)를 발광원인 LED 칩의 수평방향으로 내장한 발광다이오드의 구조를 도시한 요부 종단면도이고, Figure 1a is a longitudinal sectional view showing a structure of a light-emitting diode built in the horizontal direction of the light emission caused LED chip (Chip Zener Diode) conventional constant voltage diode recess also,

도 1b는 종래의 정전압 다이오드를 발광원인 LED 칩(Chip)의 수직방향으로 내장한 발광다이오드의 구조를 도시한 요부 종단면도이고, Figure 1b is a longitudinal sectional view showing a structure of a light-emitting diode built in the vertical direction of the conventional constant voltage causes light emission diode LED chip (Chip) FIG main portion,

도 2는 본 고안에 따른 정전기 방전(ESD) 충격 보호 소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 리드프레임의 상부면(발광다이오드 칩과 동일 평면상)에 삽입한 발광다이오드의 구성도로서, Figure 2 is a light emitting inserted to electrostatic discharge (ESD) shock protection device {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode)} for the upper surface (the light-emitting diode chip in the same plane) of the lead frame according to the present invention as a configuration of the diodes,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도, (A) is a partially sectional plan view, (b) is a partially sectional front view, (c) is a partially sectional side view,

(d)는 회로도이고, (D) is a circuit diagram, and

도 3은 본 고안의 다른 실시에 따른 정전기 방전(ESD) 충격 보호 소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 리드프레임의 하부면(발광다이오드 칩의 반대 방향)에 삽입한 발광다이오드의 구성도로서, 3 is inserted (the direction opposite to the light emitting diode chip), electrostatic discharge (ESD) shock protection device {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode)} the lower surface of the lead frame according to another embodiment of the subject innovation and also a structure of a light emitting diode,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 회로도이고, (A) is a partially sectional plan view, (b) is the schematic cross-sectional front view, (c),

도 4은 본 고안의 또 다른 실시에 따른 발광다이오드의 구성도로서, As FIG. 4 shows the configuration of a light emitting diode according to another embodiment of the subject innovation,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도, (A) is a partially sectional plan view, (b) is a partially sectional front view, (c) is a partially sectional side view,

(d)는 회로도이고, (D) is a circuit diagram, and

도 5는 본 고안의 또 다른 실시에 따른 발광다이오드의 구성도로서, 5 is a schematic view of the LED according to still another embodiment of the subject innovation,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도, (A) is a partially sectional plan view, (b) is a partially sectional front view, (c) is a partially sectional side view,

(d)는 회로도이고, (D) is a circuit diagram, and

도6,7,8은 본 고안의 실시를 위한 부분별 공정을 나타내는 평면도 및 요부 정면도이다. Fig 6,7,8 is a front plan view and a main part showing a part of each process for the implementation of the subject innovation.

* 도면의 주요 부분에 대한 부호의 설명* * Description of the Related Art *

1 : 반도체용 리드프레임{Lead Frame(Copper Substrate)} 1: a semiconductor leadframe {Lead Frame (Copper Substrate)} for

2 : 관통홀 2: through-hole

3 : 발광 다이오드 칩(InGaN, GaN계)의 다이패드(Die Pad)부 3: a die pad of the LED chip (InGaN, GaN-based) (Die Pad) section

4 : 발광다이오드 음극리드(Cathode Lead)부 4: light emitting diode anode lead (Lead Cathode) section

5 : 발광다이오드 양극리드(Anode Lead)부 5: LED anode lead (Anode Lead) section

6 : 하프엣칭{Half Etching(or Half Stamping)}부 6: Half-etching {Half Etching (or Half Stamping)} unit

7 : 정전기 방전(ESD) 충격 보호소자(Varistor, Zener Diode) 7: Electrostatic Discharge (ESD) shock protection device (Varistor, Zener Diode)

71 : 정전기 방전(ESD) 충격 보호소자(Varistor, Zener Diode) 패드부 71: Electrostatic Discharge (ESD) shock protection device (Varistor, Zener Diode) pad portion

Z : 정전압다이오드칩(Zener Diode Chip) Z: a constant voltage diode chip (Chip Zener Diode)

8 : 크림솔더(Cleam Solder) 8: Solder cream (Cleam Solder)

9 : 백색 TiO 2 열경화성수지(Silica 50%이상 함유한 에폭시 수지) 9: white TiO 2 thermosetting resin (epoxy resin containing more than 50% Silica)

91 : 표면에 반사판(Reflector)을 가진 반사컵92 : 열 가소성 수지 (Plastic 재질) 91: reflective cup 92 has a reflective plate (Reflector) to the surface: a thermoplastic resin (Plastic Materials)

10 : InGaN, GaN계 발광다이오드 칩 11 : 골드 와이어 10: InGaN, GaN-based light emitting diode chip 11. Gold wire

12 : 파장변환 형광체 13 : SiO 2 재질 그라스(Grass) 12: a wavelength conversion phosphor 13: SiO 2 glass material (Grass)

14 : 에어층(공기층) 15 : 광투과 에폭시 수지 14: air layer (air layer) 15: light-transmitting epoxy resin

이하 첨부된 도면을 참조로 본 고안에 광 반도체 소자를 설명하기로 한다. It will be described in the optical semiconductor element to the present invention with reference to the accompanying drawings. 도 2a,2b,2c,2d는 본 고안의 일 실시예에 따른 정전기 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 내장하여 정전기 방전(ESD) 충격으로 인한 불량을 줄일 수 있는 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다. Figure 2a, 2b, 2c, 2d are electrostatic discharge (ESD) shock protection device {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode)} a built-in electrostatic discharge (ESD) shock, according to one embodiment of the subject innovation as a view and a circuit diagram showing the internal structure of the polarized light emitting diodes to reduce the defect and accordingly caused.

도면에 도시된 바와 같이 본 고안에 따른 정전기 방전 충격 보호소자를 내장한 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극리드(Anode Lead)(5)과 음극리드(Cathode Lead)(4)으로 이루어진 리드프레임(1)과, 상기 음극·양극 리드(4)(5)의 상측에 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO 2 계 백색열경화성수지(9) 내부에 정전기 방전(ESD) 충격보호를 위한 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드 부분의 다이패드(Die Pad)컵(3) 부분에 부착되어 있는 GaN, InGaN계의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드 칩(10)의 통전을 위한 통전 와이어(11)와, 상기 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 With the configuration of InGaN, GaN-based light-emitting diode with a built-in ESD shock protective device is a pair of positive electrode lead (Anode Lead) (5) and a negative electrode lead (Cathode Lead) (4) according to the present invention as shown in the drawing consisting of the lead frame 1 and the negative electrode, positive electrode lead 4, 5, reflective cup 91, with a reflector (reflector) on a surface made of a TiO 2 based white thermosetting resin (9) on the upper side of and, the TiO 2 based white thermosetting resin (9) inside the electrostatic discharge (ESD) shock protection for electrostatic discharge (ESD) shock protection device (7) {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)}, and a negative electrode lead portion of the die pad (die pad), a cup (3), GaN, the InGaN-based chip that is attached to a portion (chip) (10) and said positive electrode, a negative electrode lead (5) 4 and the light emitting diode chip 10 inside and energized wire 11 for energization, the reflection cup (91) with a reflector (reflector) on the surface made of the TiO 2 based white thermosetting resin 9 광 투과성 에폭시 수지(15)가 몰딩 되어 이루어져 있다. A light-transmitting epoxy resin (15) is made is molded.

도 3a,3b,3c는 본 고안의 일 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다. Figure 3a, 3b, 3c is a diagram and a circuit diagram showing the polarity and accordingly the internal structure of the LED according to an embodiment of the present invention;

도면에 도시된 바와 같이 본 고안의 실시예에 따른 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극 리드(Anode Lead)(5)과 음극 리드(Cathode Lead)(4)으로 이루어진 리드프레임(1)과, 상기 음극·양극리드(4)(5)의 상측에 TiO 2 계 백색열경화성수지(9)로 제작한 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO 2 계 백색열경화성수지(9) 내부 뒷면에 정전기 방전 충격보호를 위한 정전기 방전충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드(4)부분의 다이패드컵(3) 부분에 부착되어 있는 GaN, InGaN계의 두개의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드 칩(10)의 통전을 위한 통전와이어(11)와, 상기 TiO 2 계 백색열경화성수지(9)로 제작한 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 채워진 광 투과성 에폭시수지(15) The configuration of the InGaN, GaN-based light emitting diode according to an embodiment of the present design as shown in the drawings are a pair of positive electrode lead (Anode Lead) (5) and a negative electrode lead (Cathode Lead) (4) in made of a lead frame (1 ) and the negative electrode, positive electrode lead 4, 5, reflective cup 91, with a reflector (reflector) on a surface made of TiO 2 based white thermosetting resin (9) on the upper side of and the TiO 2 based white thermosetting resin 9 electrostatic discharge impact protection for electrostatic discharge impact protection to the back of the inner element 7 {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)}, and a negative electrode lead 4, the die pad cup portion ( 3) two chips of GaN, InGaN-based, which is attached to the part (chip) 10, and, the power wire 11 for the energization of the positive electrode, a negative electrode lead (5) 4 and the light emitting diode chip 10 and, wherein the TiO 2-reflective cup 91, a light-transmitting epoxy resin 15 is filled inside with a reflecting plate (reflector) on a surface made of a white heat-curable resin 9 로 이루어져 있다. It consists of a.

도 4a,4b,4c,4d는 본 고안의 또 다른 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다. Figure 4a, 4b, 4c, 4d is a diagram and a circuit diagram showing the polarity and accordingly the internal structure of the LED according to still another embodiment of the present invention;

도면에 도시된 바와 같이 본 고안 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극리드(Anode Lead)(5)와 음극리드(Cathode Lead)(4)로 이루어진 리드프레임(1)과, 상기 음극·양극리드(4)(5)의 상측에 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 정전기로 인한 방전 충격 보호를 위한 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드프레임(Lead Frame)(4)부분의 다이패드(Die Pad)컵(3) 부분에 부착되어 있는 GaN, InGaN계의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드칩(10)의 통전을 위한 통전와이어(11)와, 상기 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector) The configuration of the subject innovation InGaN, GaN-based light emitting diode as shown in the figure, the lead frame 1 and the negative electrode consisting of a pair of positive electrode lead (Anode Lead) (5) and a negative electrode lead (Cathode Lead) (4) , made of a positive electrode lead (4) (5) a reflective cup 91, and the TiO 2 based white thermosetting resin (9) with a reflector (reflector) on a surface made of a TiO 2 based white thermosetting resin (9) on the upper side of reflective cup 91, the internal electrostatic discharge (ESD) for discharging impact protection from static electricity on impact protection element (7) {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)} with a reflector (reflector) to the surface and a cathode lead frame (lead frame) (4), the die pad (die pad) the cup 3 is attached to the GaN, the InGaN-based chip (chip) (10), the positive electrode, a negative electrode lead (5 in part of the portion ) 4 and the reflective plate on the surface is made of an electrically conductive wire 11, and the TiO 2 based white thermosetting resin (9) for energizing the light emitting diode chip (10) (reflector) 을 가진 반사컵(91) 내부에 부착된 GaN, InGaN계의 칩(Chip)(10)위에 도포된 파장변환형광체(12)와, 상기 파장변환형광체(12) 위에 존재하는 공기층(14)과, 상기 TiO 2 계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 상측면에 위치하는 SiO 2 그라스(Glass)(13)로 이루어져 있다. Reflective cup 91, the wavelength applied over the chip (Chip) (10) of GaN, InGaN-based attached to the internal conversion phosphor 12 and the air layer 14 existing on the wavelength converting phosphor (12) and with, It consists of SiO 2 glass (glass) (13) positioned on the side of the reflection cup (91) with a reflector (reflector) on the surface made of the TiO 2 based white thermosetting resin (9).

도 5a,5b,5c,5d는 본 고안의 또 다른 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다. Figure 5a, 5b, 5c, 5d is a diagram and a circuit diagram showing the polarity and accordingly the internal structure of the LED according to still another embodiment of the present invention;

이는, 도면에 도시된 바와 같이 도 4의 기술 내용과 같으며. This was as shown in the drawing the same as the description of FIG. 다만, GaN, InGaN계 발광다이오드칩(10)과 정전기 방전 충격 보호소자(7)가 다수열(1-4열 구성)로 이루어져 있는 것을 나타낸 것이다. However, shows that the GaN, InGaN-based light emitting diode chip 10 and the electrostatic discharge impact protection element (7) consisting of a number of columns (1-4 column configuration).

도 6,7,8은 본 고안 하나의 일 실시예, 다른 일 실시에, 또 다른 일 실시예를 이루기 위한 중요 공정도상의 원부자재의 도면에 관한 것이다. Fig 6,7,8 relates to the drawing of the raw materials on the embodiment of the subject innovation one days example, in another implementation, it is important to achieve a process chart showing another embodiment.

다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 충격 방전(ESD)보호소자(7)를 부착하기 위한 패드(Pad)부(71)로 이루어지고 있다. It may comprise a plurality of thermal die pad portion arranged in (3) and through-holes (2) and the pad (Pad) section 71 for attaching the static electricity attack discharge (ESD) protection device (7).

도 7은 본 고안의 실시를 위한 제 1공정도에 관한 도면으로 다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 방전 충격 보호소자(7)를 부착하기 위한 패드(Pad)부(71)와, 이 패드(Pad)(71)부위에 도포한 크림솔더(Cleam Solder)(8)와, 이 크림솔더(8)위에 부착된 정전기 방전 충격 보호소자(7)로 이루어지고 있다. 7 is a pad (Pad) for attaching the drawings as part of the die pads arranged in a plurality column 3 and the through-hole 2 and the electrostatic discharge impact protection element (7) in accordance with the first process diagram for the implementation of the subject innovation may comprise a portion (71) and, a pad (pad) 71, a cream applied to the area solder (Cleam solder), (8) and, an electrostatic discharge impact protection element (7) deposited on the cream solder (8) .

도 8은 본 고안의 실시를 위한 제 2공정도에 관한 도면으로 다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 충격보호소자(7)를 부착하기 위한 패드(Pad)부(71)와 패드(Pad)(71)부위에 도포한 크림솔더(8)와, 이 크림솔더(8)위에 부착된 정전기 방전 충격 보호소자(7)와 반도체 리드프레임 부분에 몰딩된 TiO 2 계 백색열경화성수지(9)로 이루어지고 있다. 8 is a section pad (Pad) for attaching the drawing as a die pad portion arranged in multiple columns 3 and the through-hole 2 and the static-impact protection device (7) according to a second process diagram for the implementation of the subject innovation 71 and the pad (pad) 71, a cream applied to the area solder (8), and a cream solder (8) the electrostatic discharge impact protection deposited on the element 7 and the second molded TiO the semiconductor lead frame portions based It is formed of a white thermoplastic resin (9).

이상과 같은 구성으로 이루어지는 본 고안의 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드는 InGaN, GaN계의 발광다이오드 칩(10)의 극성과 반대의 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}의 전극을 형성시킴으로서 수천 볼트의 정전기가 발생할 시 InGaN, GaN계의 칩(7)(Chip)에 직접적인 충격이 가해지지 않도록 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}로 정전기를 도통시켜 세트(Set) 및 발광다이오드 소자에 정전기가 도통되지 않기 때문에 정전기 방전 충격 발생으로 인한 불량률을 획기적으로 줄일 수 있다. The high-brightness light-emitting diodes are protected built for more than the configuration of electrostatic discharge (ESD) shock of the subject innovation made in the same is InGaN, the LED chip 10 and electrostatic discharge (ESD) shock protection device of the polarity opposite to that of the GaN-based (7) a direct impact on the {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)} when the static electricity of several thousand volts cause the electrode sikimeuroseo formed of InGaN, GaN-based chip (7) (chip) not to apply ESD impact protection element (7) due to the {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)} conducting the static electricity is not static electricity conduction to the set (set) and the LED device due to electrostatic discharge, shock it is possible to reduce the defect rate dramatically.

이 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 백색의 열가소성 사출재질이 아닌 TiO 2 계 백색 열경화성수지(9)와 함께 사용함으로서 InGaN, GaN계의 발광다이오드 칩(10)(Chip)을 은(Ag)수지(Epoxy)로 접착하지 않고 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있다. The electrostatic discharge impact protection element (7) by use with {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode)} in a white thermoplastic TiO 2 instead of the injection material-based white thermosetting resin (9), InGaN, GaN-based of the LED chip (10) (chip) silver (Ag) it can be the work of a resin method without bonding to (Epoxy) yutek teak bonding a high temperature (Eutectic bonding) improve the production capacity, the forward voltage (Forward voltage It may lower the -Vf).

또한, 이 TiO 2 계 백색 열경화성수지(9) 내부에 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 실장함으로서 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있다. In addition, the TiO 2 based emitted from the white heat-curable resin 9 electrostatic discharge impact protection inside the element 7 mounted by a light emitting diode chip to {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-Diode)} (Chip) does not interfere with the light, it is possible to improve the brightness of the LED.

또한, TiO 2 계 백색 열경화성수지(9)를 사용하여 만든 표면에 반사판(Reflector)을 가진 반사컵(91) 내부를 투과형 에폭시 수지로 채우지 않고 TiO 2 계 백색 열경화성수지(9) 상측부에 SiO 2 그라스(Glass)(13)를 접착제로 접착함으로서 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 있다. Further, SiO 2 to TiO phase 2 based white thermosetting resin reflective cup having a reflective plate (Reflector) on the surface made by using the 9 (91) without filling the inside of a transmission-type epoxy resin, TiO 2 based white thermosetting resin 9 side glass can be produced a light-emitting diode device which does not have the problems caused by high temperature because it does not give a thermally stress (stress) on the LED chip (chip) by bonding the (glass) (13) with an adhesive.

이상과 같은 본 고안은, InGaN, GaN계의 칩(Chip)에 직접적인 충격이 가해지지 않고 정전기 방전 충격 발생으로 인한 불량률을 획기적으로 줄이고, 정전기 방전 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 백색의 열가소성 사출재질이 아닌 TiO 2 계 백색 열경화성수지와 함께 사용함으로서 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있고, 또한, 이 TiO 2 계 백색 열경화성수지 내부에 정전기 방전 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 실장함으로서 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있으며 표면에 반사판(Reflector)을 가진 반사컵 공간에 정전압 다이 The subject innovation is, InGaN, without being a direct impact applied to the chip (Chip) of the GaN-based dramatically reduce the defect rate caused by electrostatic discharge, shock, electrostatic discharge, impact protection elements {a semiconductor resistance element (Varistor) or the constant-voltage diode as described above (Zener-Diode)} to by used in combination with TiO 2 based white thermosetting resin other than the thermoplastic injection material as a white yutek teak bonding a high temperature it is possible to work with (Eutectic bonding) method, improve the production capacity, the forward voltage (Forward and to lower the voltage-Vf), in addition, by mounting the TiO 2 type ESD impact protective device {semiconductor resistance element (Varistor) or a constant voltage diode (Zener-diode)} within the white heat-curable resin, the LED chip (chip) possible to improve the brightness of the LED does not interfere with the light emitted from the reflective cup, and a constant voltage space with reflector (reflector) on the die surface 드를 실장하고 InGaN, GaN계의 칩(Chip)를 실장하기 위하여 다이본딩과 와이어본딩을 하는 작업상의 난이점을 해소할 수 있기에 획기적인 생산성 향상효과를 얻을 수 있다. Mounting the DE and because it can be eliminated I advantages work to the die-bonding and wire-bonding to mounting the chip (Chip) of InGaN, GaN-based may be obtained improving the breakthrough productivity.

또한, TiO 2 계 백색 열경화성수지를 사용하여 만든 표면에 반사판(Reflector)을 가진 반사컵 내부를 TiO 2 계 백색 열경화성수지 상측부에 SiO 2 그라스(Glass)를 접착제로 접착함으로서 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 효과를 제공한다. Further, the light emitting diode chip (Chip) by a SiO 2 glass a reflective cup inside with a reflecting plate (Reflector) on the surface created by using the TiO 2 based white thermosetting resin on TiO 2 based white thermosetting resin, the upper portion (Glass) bonding with an adhesive due to not give the thermal stress (stress) can be prepared to provide a light-emitting diode device which does not have a problem caused by high heat effect.

Claims (8)

  1. 한 쌍의 양극 리드(Anode Lead)(5)와 음극 리드(Cathode Lead)(4)로 이루어진 리드프레임(1)과, 상기 음극·양극 리드(4)(5)의 상측에 발광다이오드의 빛을 한 방향으로 보내기 위한 표면에 반사판(Reflector)을 가진 반사컵(91)과 표면에 반사판(Reflector)을 가진 반사컵(91) 안쪽(음극 양극 리드의 동일 평면상)에 정전압 방전(ESD)충격 보호소자를 삽입하고, 음극 리드(Cathode Lead Frame)부분의 다이패드(Die Pad)컵(3) 부분에 GaN, InGaN계의 칩(10)을 부착하고, 상기 양극·음극 리드(5)(4)와 발광다이오드칩(10)의 통전을 위한 통전 와이어(11)와, 상기 표면에 반사판을 가진 반사컵(91) 안쪽에 광 투과성 에폭시 수지(15)로 이루어지는 발광다이오드에 있어서, And a lead frame (1) consisting of a pair of positive electrode lead (Anode Lead) (5) and a negative electrode lead (Cathode Lead) (4), the light of the LED to the image side of the negative electrode, a positive electrode lead (4) (5) reflecting cup 91 and the surface reflection cup (91) inside (the same plane of the negative electrode positive electrode lead) constant-voltage discharge (ESD) shock protection with the reflector (reflector) in having a reflector (reflector) to the surface for sending in a direction insert the element, and a negative electrode lead die pad of the part (cathode lead Frame) (die pad), a cup (3) attached to the chip 10 of GaN, InGaN-based, and the positive electrode, negative electrode lead (5) to the portion (4) in the light emission and energized wire 11 for the energization of the LED chip 10, a light emitting diode comprising a light-transmitting epoxy resin (15) inside the reflective cup 91, with a reflective plate on the surface,
    상기 표면에 반사판(Reflector)을 가진 반사컵(91)이 TiO 2 계 백색 열경화성수지(9)로 트랜스퍼 몰드(Transfer Mold)방식으로 제작되어 몰드 전에 발광다이오드의 빛이 방사 되는 방향으로 표면에 반사판(Reflecfor)을 가진 반사컵(91)의 벽면이 위치할 곳에 하나 이상의 정전기 방전(ESD) 충격보호소자를 크림솔더(Cream Solder)(8)로 부착하고, 그 위에 TiO 2 계 백색 열경화성수지(9)를 트랜스퍼 몰딩하고 트리밍(Trimming)과 포밍(Forming)을 통하여 개체화가 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 충격 보호 기능이 내장된 고휘도 발광다이오드. Reflection plate on a surface in the direction in which the reflective cup (91) with a reflector (Reflector) on the surface is produced by transfer molding (Transfer Mold) method as TiO 2 based white thermosetting resin 9 to be the light of the light emitting diode before the mold radiation ( Reflecfor) attached to at least one electrostatic discharge (ESD) shock protection device where it is the wall surface of the reflective cup 91 is position in the cream solder (Cream solder), (8) and, TiO 2 based white thermosetting resin thereon (9 with a) the transfer molding, and trimming (trimming) and forming (forming) a high-brightness light-emitting diode electrostatic discharge (ESD) protection, impact shock, characterized in that individuated is made through the built.
  2. 청구항 1에 있어서, The method according to claim 1,
    발광다이오드칩(Chip)(10)과 정전기 방전(ESD) 충격 보호소자를 다수열로 배열하고, 표면에 반사판(Reflector)을 가진 반사컵(91)도 다수열로 구성하여 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드. The LED chip (Chip) (10) and the reflective cup 91, with electrostatic discharge (ESD) the reflector (Reflector) for arranging the impact protection device to multiple columns, and the surface is also static, characterized in that formed by composed of multiple columns discharge (ESD) the high-brightness light-emitting diodes are built in shock protection.
  3. 청구항 1에 있어서, The method according to claim 1,
    상기 백색 TiO 2 계 열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부 뒷쪽면에 하나 이상의 정전기 방전(ESD) 충격 보호소자를 내장한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드. Electrostatic discharge of the white TiO 2 system characterized in that the thermosetting resin (9) built in a surface of the reflection cup (91) at least one electrostatic discharge (ESD) shock protection device inside the back side with a reflection plate (Reflector) to made of (ESD ), the high-brightness light-emitting diodes are built in shock protection.
  4. 청구항 1,2,3항 중 어느 한 항에 있어서 Claim 1, 2, 3 according to any one of items
    상기 정전기 방전(ESD)로 충격보호 소자로 반도체 저항소자(Varistor)를 사용한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드. The electrostatic discharge (ESD) shock protection of high-brightness light-emitting diodes are built-in, characterized in that a shock protection device to electrostatic discharge (ESD) that uses a semiconductor resistance element (Varistor).
  5. 청구항 1,2,3항 중 어느 한 항에 있어서 Claim 1, 2, 3 according to any one of items
    상기 정전기 방전(ESD)로 충격보호 소자로 정전압 다이오드(Zener Diode)를 사용한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드. A constant voltage diode (Zener Diode) electrostatic discharge (ESD) shock protection of high-brightness light-emitting diodes are built-in, characterized in that used as the impact protection device by the electrostatic discharge (ESD).
  6. 청구항 1,2,3항 중 어느 한 항에 있어서, A method according to any one of claims 1, 2 and 3, wherein
    상기 열경화성수지(TiO 2 )(9) 내부에 배치된 GaN, InGaN계 칩(10)위에 형성되는 파장변환형광체(12)와, 상기 파장변환형광체(12)에 형성된 공기층(14)과, 상기 열경화성수지(TiO2)(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 상측면에 SiO 2 그라스(Glass)(13)를 부착하여서 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격보호 기능이 내장된 고휘도 발광다이오드. The thermosetting resin (TiO 2), (9) a wavelength which is formed on GaN, InGaN-based chip 10 disposed inside the conversion phosphor 12, the wavelength conversion layer of air 14 formed on the fluorescent material 12, the thermosetting resin (TiO2) (9) reflecting cup 91, the image-side surface to SiO 2 glass (glass) electro-static discharge (ESD) shock protection which comprises hayeoseo attachment (13) with a reflector (reflector) on a surface made of the built-in high-brightness light-emitting diode.
  7. 청구항 1,2,3항중 어느 한 항에 있어서 Compounds according to any one of the preceding claims 1, 2, 3
    상기 발광다이오드 칩(Chip)(10)과 정전기 방전(ESD) 충격 보호소자(7)를 다수열로 구성된 표면에 반사판(Reflector)을 가진 반사컵(91)에 다수열 배열하여서 이루어지는 것을 특징으로 하는정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드. Multiple columns arranged on the LED chip (Chip) (10) and the reflective cup 91, with a reflector (Reflector) an electrostatic discharge (ESD) shock protection element 7 on the surface formed of a plurality column hayeoseo which comprises electrostatic discharge (ESD) is a high-brightness light-emitting diode built in shock protection.
  8. 청구항 1,2,3항중 어느 한 항에에 있어서, Compounds according to claim 1, 2, 3 to any one of the preceding,
    상기 표면에 반사판(Reflector)을 가진 반사컵(91)을 플라스틱 사출재질을 사용하며 한 플라스틱 리플렉터에 다수개 발광다이오드 칩(Chip)(10)를 서로 다른 다이패드(Die Pad)에 각각 배열하여서 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이내장된 고휘도 발광다이오드. A reflective cup (91) with a reflector (Reflector) to the surface using a plastic injection material and formed hayeoseo respectively arranged a plurality of light-emitting diode chip (Chip) (10) to different die pad (Die Pad) on a plastic reflector electrostatic discharge (ESD) shock protection of high-brightness light-emitting diodes are built-in, characterized in that.
KR20040026925U 2004-09-20 2004-09-20 High Brightness LED With Protective Function of Electrostatic Damage KR200373718Y1 (en)

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JP2005267552A JP2006093697A (en) 2004-09-20 2005-09-14 High luminance light-emitting diode provided with protection function against electrostatic discharge impact
TW94132448A TWI362762B (en) 2004-09-20 2005-09-20 High brighthess led with protective function of electrostatic damage
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