KR20030074083A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR20030074083A KR20030074083A KR1020020066499A KR20020066499A KR20030074083A KR 20030074083 A KR20030074083 A KR 20030074083A KR 1020020066499 A KR1020020066499 A KR 1020020066499A KR 20020066499 A KR20020066499 A KR 20020066499A KR 20030074083 A KR20030074083 A KR 20030074083A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 63
- 239000003990 capacitor Substances 0.000 claims abstract description 66
- 239000010410 layer Substances 0.000 claims abstract description 61
- 239000011229 interlayer Substances 0.000 claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000008878 coupling Effects 0.000 claims abstract description 7
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 56
- 229910052581 Si3N4 Inorganic materials 0.000 description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 43
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 40
- 230000008569 process Effects 0.000 description 35
- 229910052814 silicon oxide Inorganic materials 0.000 description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- 238000000206 photolithography Methods 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 238000004380 ashing Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- FLWCIIGMVIPYOY-UHFFFAOYSA-N fluoro(trihydroxy)silane Chemical compound O[Si](O)(O)F FLWCIIGMVIPYOY-UHFFFAOYSA-N 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
- 하나 또는 복수의 배선과,상기 배선의 상면과 접속되어 이루어지는 하층 전극과, 상층 전극이 용량 결합하여 이루어지는 캐패시터를 갖고,상기 하층 전극은 상기 배선의 재료의 확산을 방지하는 재료로 이루어지며, 상기 배선을 내포하는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 배선은 그 배선의 아래쪽에 형성되는 하층 배선과 접속되는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서,상기 하층 전극은 상기 배선의 윗쪽에 형성되는 상층 배선과 직접 접속되는 것을 특징으로 하는 반도체 장치.
- 제3항에 있어서,상기 하층 전극은 상기 상층 배선과 접속되는 연장 영역을 갖는 것을 특징으로 하는 반도체 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 배선은 저저항의 금속을 함유하여 이루어지는 것을 특징으로 하는 반도체 장치.
- 제2항에 있어서,상기 하층 배선은 저저항의 금속을 함유하여 이루어지는 것을 특징으로 하는 반도체 장치.
- 제5항 또는 제6항에 있어서,상기 저저항의 금속은, Cu를 함유하는 것을 특징으로 하는 반도체 장치.
- 하나 또는 복수의 배선을 형성하는 공정과,상층 전극과 상기 배선의 재료의 확산을 방지하는 재료로 이루어지는 하층 전극이 용량 결합하고, 상기 하층 전극이 상기 배선을 내포하는 영역에서 상기 배선의 상면과 접속하는 캐패시터를 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제8항에 있어서,상기 배선의 아래쪽에, 그 배선과 접속되는 하층 배선을 형성하는 것 특징으로 하는 반도체 장치의 제조 방법.
- 제8항에 있어서,적어도 상기 캐패시터를 피복하여 이루어지는 층간 절연막보다 에칭 레이트가 낮은 에칭 스토퍼막을 상기 상층 전극 상에 형성하며, 상기 상층 전극까지 도통하는 비아홀을 포함하는 깊이가 다른 복수의 비아홀을 상기 층간 절연막을 에칭함으로써 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00064239 | 2002-03-08 | ||
JP2002064239A JP2003264235A (ja) | 2002-03-08 | 2002-03-08 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030074083A true KR20030074083A (ko) | 2003-09-19 |
KR100793475B1 KR100793475B1 (ko) | 2008-01-14 |
Family
ID=28034867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020066499A KR100793475B1 (ko) | 2002-03-08 | 2002-10-30 | 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7002201B2 (ko) |
JP (1) | JP2003264235A (ko) |
KR (1) | KR100793475B1 (ko) |
CN (1) | CN100401519C (ko) |
TW (1) | TW580766B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230292B2 (en) * | 2003-08-05 | 2007-06-12 | Micron Technology, Inc. | Stud electrode and process for making same |
CN100461393C (zh) * | 2003-12-30 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 用于将铜与金属-绝缘体-金属电容器结合的方法和结构 |
KR100668957B1 (ko) * | 2003-12-31 | 2007-01-12 | 동부일렉트로닉스 주식회사 | 엠아이엠 캐패시터 제조 방법 |
JP4707330B2 (ja) | 2004-03-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7282404B2 (en) * | 2004-06-01 | 2007-10-16 | International Business Machines Corporation | Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme |
US8227893B2 (en) | 2004-06-23 | 2012-07-24 | Nec Corporation | Semiconductor device with capacitor element |
KR100731083B1 (ko) * | 2005-07-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 구리 금속 배선의 형성 방법 및 그에 의해 형성된 구리금속 배선을 포함하는 반도체 소자 |
JP5038612B2 (ja) | 2005-09-29 | 2012-10-03 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7488643B2 (en) * | 2006-06-21 | 2009-02-10 | International Business Machines Corporation | MIM capacitor and method of making same |
JP5127251B2 (ja) * | 2007-02-01 | 2013-01-23 | パナソニック株式会社 | 半導体装置の製造方法 |
WO2009090893A1 (ja) * | 2008-01-18 | 2009-07-23 | Nec Corporation | 容量素子及びこれを備えた半導体装置並びに容量素子の製造方法 |
WO2009122496A1 (ja) * | 2008-03-31 | 2009-10-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR100955841B1 (ko) | 2008-06-12 | 2010-05-04 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
JP2011155064A (ja) * | 2010-01-26 | 2011-08-11 | Elpida Memory Inc | 半導体装置およびその製造方法 |
CN102420104B (zh) * | 2011-06-07 | 2013-12-04 | 上海华力微电子有限公司 | 一种mim(金属-绝缘层-金属)电容制作方法 |
US8546914B2 (en) * | 2011-07-19 | 2013-10-01 | United Microelectronics Corp. | Embedded capacitor structure and the forming method thereof |
CN103295957A (zh) * | 2013-06-03 | 2013-09-11 | 上海华力微电子有限公司 | 一种改善金属层-绝缘层-金属层失配参数的方法 |
CN111199956A (zh) * | 2018-11-19 | 2020-05-26 | 中芯国际集成电路制造(天津)有限公司 | 一种半导体器件及其形成方法 |
CN111128957B (zh) * | 2019-12-26 | 2021-11-09 | 华虹半导体(无锡)有限公司 | 嵌入结构的mim电容及其制造方法 |
US11894297B2 (en) * | 2021-07-29 | 2024-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-insulator-metal capacitor having electrodes with increasing thickness |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3569112B2 (ja) * | 1997-07-17 | 2004-09-22 | 株式会社東芝 | 半導体集積回路およびその製造方法 |
JP3496576B2 (ja) * | 1999-06-04 | 2004-02-16 | 日本電気株式会社 | 半導体装置 |
JP3967544B2 (ja) * | 1999-12-14 | 2007-08-29 | 株式会社東芝 | Mimキャパシタ |
US6498364B1 (en) * | 2000-01-21 | 2002-12-24 | Agere Systems Inc. | Capacitor for integration with copper damascene processes |
JP3715502B2 (ja) | 2000-03-14 | 2005-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2002009248A (ja) | 2000-06-26 | 2002-01-11 | Oki Electric Ind Co Ltd | キャパシタおよびその製造方法 |
US6344964B1 (en) * | 2000-07-14 | 2002-02-05 | International Business Machines Corporation | Capacitor having sidewall spacer protecting the dielectric layer |
US6313003B1 (en) * | 2000-08-17 | 2001-11-06 | Taiwan Semiconductor Manufacturing Company | Fabrication process for metal-insulator-metal capacitor with low gate resistance |
US6492226B1 (en) * | 2001-06-15 | 2002-12-10 | Silicon Integrated Systems Corp. | Method for forming a metal capacitor in a damascene process |
JP3842111B2 (ja) * | 2001-11-13 | 2006-11-08 | 富士通株式会社 | 半導体装置及びその製造方法 |
-
2002
- 2002-03-08 JP JP2002064239A patent/JP2003264235A/ja active Pending
- 2002-10-17 TW TW091123966A patent/TW580766B/zh not_active IP Right Cessation
- 2002-10-21 US US10/274,112 patent/US7002201B2/en not_active Expired - Lifetime
- 2002-10-30 KR KR1020020066499A patent/KR100793475B1/ko active IP Right Grant
- 2002-11-06 CN CNB021502501A patent/CN100401519C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1444279A (zh) | 2003-09-24 |
US7002201B2 (en) | 2006-02-21 |
US20030170962A1 (en) | 2003-09-11 |
JP2003264235A (ja) | 2003-09-19 |
CN100401519C (zh) | 2008-07-09 |
TW580766B (en) | 2004-03-21 |
KR100793475B1 (ko) | 2008-01-14 |
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