KR20030001789A - 금속 배선 형성 방법 - Google Patents
금속 배선 형성 방법 Download PDFInfo
- Publication number
- KR20030001789A KR20030001789A KR1020010037476A KR20010037476A KR20030001789A KR 20030001789 A KR20030001789 A KR 20030001789A KR 1020010037476 A KR1020010037476 A KR 1020010037476A KR 20010037476 A KR20010037476 A KR 20010037476A KR 20030001789 A KR20030001789 A KR 20030001789A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- barrier layer
- forming
- contact hole
- plug
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 62
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000010936 titanium Substances 0.000 claims abstract description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract 4
- 238000005530 etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (4)
- 기판 상에 콘택홀이 구비된 층간 절연막을 형성하는 단계;상기 콘택홀을 포함한 층간 절연막 상에 제 1 베리어층을 형성하되, 상기 콘택홀 탑 코너 부위에 오버행이 발생되는 단계;상기 제 1 베리어층을 대기 중에 노출시켜 상기 제 1 베리어층 표면에 제 1 베리어 산화물을 형성하는 단계;상기 제 1 베리어 산화물을 식각하여 상기 오버행을 제거하는 단계;상기 제 1 베리어층 상에 제 2 베리어층과 플러그용 도전층을 형성하는 단계를 포함하는 금속 배선 형성 방법.
- 제 1 항에 있어서,상기 제 1 베리어층을 티타늄(Ti)층으로 형성함을 특징으로 하는 금속 배선 형성 방법.
- 제 2 항에 있어서,상기 티타늄 산화물을 100W ∼ 5kW의 파워(Power), 300 ∼ 800℃의 온도 및 0.1 ∼ 100Torr의 압력에서 플라즈마를 사용한 식각 공정을 10초 ∼ 10분간 진행하여 식각함을 특징으로 하는 금속 배선 형성 방법.
- 제 3 항에 있어서,상기 티타늄 산화물의 식각 공정은 N2,H2,N2/H2혼합기체, N2/H2/He 혼합기체 및 N2/H2/Ar 혼합기체 등을 사용함을 특징으로 하는 금속 배선 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0037476A KR100390997B1 (ko) | 2001-06-28 | 2001-06-28 | 금속 배선 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0037476A KR100390997B1 (ko) | 2001-06-28 | 2001-06-28 | 금속 배선 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030001789A true KR20030001789A (ko) | 2003-01-08 |
KR100390997B1 KR100390997B1 (ko) | 2003-07-12 |
Family
ID=27711786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0037476A KR100390997B1 (ko) | 2001-06-28 | 2001-06-28 | 금속 배선 형성 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100390997B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100870271B1 (ko) | 2007-06-28 | 2008-11-25 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 및 그의 형성 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2560626B2 (ja) * | 1993-11-10 | 1996-12-04 | 日本電気株式会社 | 半導体装置の製造方法 |
KR970030665A (ko) * | 1995-11-22 | 1997-06-26 | 김주용 | 반도체 소자의 베리어 금속층 형성방법 |
US5654233A (en) * | 1996-04-08 | 1997-08-05 | Taiwan Semiconductor Manufacturing Company Ltd | Step coverage enhancement process for sub half micron contact/via |
JPH09326436A (ja) * | 1996-06-06 | 1997-12-16 | Sony Corp | 配線形成方法 |
-
2001
- 2001-06-28 KR KR10-2001-0037476A patent/KR100390997B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100870271B1 (ko) | 2007-06-28 | 2008-11-25 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 및 그의 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100390997B1 (ko) | 2003-07-12 |
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