KR20010091976A - 반도체 웨이퍼 가공장치 - Google Patents
반도체 웨이퍼 가공장치 Download PDFInfo
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- KR20010091976A KR20010091976A KR1020010012570A KR20010012570A KR20010091976A KR 20010091976 A KR20010091976 A KR 20010091976A KR 1020010012570 A KR1020010012570 A KR 1020010012570A KR 20010012570 A KR20010012570 A KR 20010012570A KR 20010091976 A KR20010091976 A KR 20010091976A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 254
- 238000004140 cleaning Methods 0.000 claims abstract description 89
- 230000007246 mechanism Effects 0.000 claims abstract description 47
- 238000000227 grinding Methods 0.000 claims abstract description 23
- 238000009832 plasma treatment Methods 0.000 claims abstract 3
- 238000005498 polishing Methods 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 28
- 230000001681 protective effect Effects 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/976—Temporary protective layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (19)
- 반도체 웨이퍼의 표면을 연마하여 박형화 가공하는 반도체 웨이퍼 가공장치로서, 상기 반도체 웨이퍼를 기계 연마하는 연마부와, 기계 연마후의 반도체 웨이퍼를 세정하는 세정부와, 상기 기계 연마에 의해 반도체 웨이퍼에 생긴 대미지층을 상기 웨이퍼 세정부에 의해 세정된 후에 제거하는 대미지층 제거처리부와, 상기 연마부, 상기 웨이퍼 세정부 및 상기 대미지층 제거처리부의 사이에서 반도체 웨이퍼의 트랜스퍼를 행하는 웨이퍼 반송기구를 구비한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 반도체 웨이퍼의 센터링을 행하는 프리센터부를 구비하고, 이 프리센터부에 의해 센터링된 반도체 웨이퍼를 상기 웨이퍼 반송기구에 의해 상기 연마부로 공급하는 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 연마부로 공급되기 전의 가공전의 반도체 웨이퍼 및/또는 상기 대미지층 제거처리부에서 인출된 가공후의 반도체 웨이퍼를 수납하는 수납부를 구비한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 웨이퍼 반송기구는, 극좌표계의 로봇기구를 포함하는 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 웨이퍼 반송기구는, 상기 연마부에서 기계 연마후의 반도체 웨이퍼를 인출하여 상기 웨이퍼 세정부로 인도하는 세정전 반송부와, 상기 웨이퍼 세정부에서 세정후의 반도체 웨이퍼를 인출하여 상기 대미지층 제거처리부로 인도하는 세정후 반송부를 구비한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 대미지층 제거처리부는, 플라즈마 처리에 의해 대미지층을 에칭하는 플라즈마 처리부인 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 대미지층 제거처리부는, 화학 약액에 의해 대미지층을 에칭하는 웨트 에칭처리부인 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 1 항에 있어서, 상기 웨이퍼 반송기구가, 상기 프리센터부에서 반도체 웨이퍼를 유지하여 상기 연마부로 이송하는 제1 웨이퍼 반송부와, 상기 연마부에 의해 연마된 반도체 웨이퍼를 인출하여 상기 웨이퍼 세정부로 반송하는 제2 웨이퍼 반송부와, 상기 프리센터부, 상기 웨이퍼 세정부 및 상기 대미지층 제거처리부의 사이에서 반도체 웨이퍼의 트랜스퍼를 행하는 극좌표계의 로봇기구를 가지는 제3 웨이퍼 반송부를 구비하고, 상기 대미지층 제거처리부를 상기 로봇기구의 극좌표계의 원점을 공통의 원점으로 하여 상기 연마부의 방향을 Y축 정방향으로 한 경우의 직교좌표계의 제3사분면 및 제4사분면에 배치하고, 또 상기 극좌표계의 원점이 당해 대미지층 제거처리부의 반도체 웨이퍼 반출입 중심선의 연장선상에 위치하도록 배열 설치한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 8 항에 있어서, 상기 연마부로 공급되기 전의 가공전의 반도체 웨이퍼 및 또는 대미지층 제거처리부에서 인출된 가공후의 반도체 웨이퍼를 수납하는 수납부를 상기 제3 웨이퍼 반송부에 의해 웨이퍼의 출입이 가능한 위치에 구비한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 8 항에 있어서, 상기 세정부를 상기 직교좌표계의 제1사분면 또는 제2사분면의 어느 한쪽에 배치한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 제 10 항에 있어서, 상기 프리센터부를 상기 세정부에 대해서 상기 좌표계의 Y축을 사이에 둔 반대측의 사분면에 배치한 것을 특징으로 하는 반도체 웨이퍼 가공장치.
- 반도체 웨이퍼를 목표 두께로 박형화 가공하는 반도체 웨이퍼 가공방법으로서, 상기 반도체 웨이퍼의 회로 형성면의 반대측을 연마부에 의해 기계 연마하는 공정과, 상기 기계 연마후의 반도체 웨이퍼를 상기 기계 연마부에서 인출하여 웨이퍼 세정부로 인도하는 공정과, 상기 웨이퍼 세정부로 인도된 반도체 웨이퍼를 세정하는 공정과, 세정후의 반도체 웨이퍼를 상기 웨이퍼 세정부에서 인출하여 대미지층 제거처리부로 인도하는 공정과, 상기 기계 연마에 의해 생긴 대미지층을 상기 대미지층 제거처리부에서 제거하는 공정을 포함하는 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 12 항에 있어서, 상기 대미지층 제거처리부는, 플라즈마 처리에 의해 대미지층을 에칭하는 플라즈마 처리부인 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 13 항에 있어서, 기계 연마에 의해 상기 목표 두께에 3㎛∼50㎛의 범위에서 설정되는 드라이 에칭 마진을 더한 두께까지 연마하고, 나머지를 플라즈마 처리에 의해 드라이 에칭으로 제거하는 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 14 항에 있어서, 상기 반도체 웨이퍼는, 실리콘을 주성분으로 하는 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 13 항에 있어서, 상기 기계 연마에 의해 반도체 웨이퍼를 연마한 후, 드라에 에칭을 행하기 전에 반도체 웨이퍼를 액체로 세정하는 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 16 항에 있어서, 상기 액체는 물인 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 12 항에 있어서, 상기 대미지층 제거처리부는, 화학 약액에 의해 대미지층을 에칭하는 웨트 에칭처리부인 것을 특징으로 하는 반도체 웨이퍼 가공방법.
- 제 12 항에 있어서, 상기 반도체 웨이퍼의 회로 형성면에 보호막이 형성된 상태에서 기계 연마 및 대미지층의 제거를 행하는 것을 특징으로 하는 반도체 웨이퍼 가공방법.
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-68229 | 2000-03-13 | ||
JP2000-68230 | 2000-03-13 | ||
JP2000-68231 | 2000-03-13 | ||
JP2000068230A JP2001257186A (ja) | 2000-03-13 | 2000-03-13 | 半導体ウェハの加工方法 |
JP2000068231A JP2001257248A (ja) | 2000-03-13 | 2000-03-13 | 半導体ウェハの加工装置および加工方法 |
JP2000068229A JP2001257247A (ja) | 2000-03-13 | 2000-03-13 | 半導体ウェハの加工装置 |
JP2000175312A JP3633854B2 (ja) | 2000-06-12 | 2000-06-12 | 半導体ウェハの加工装置 |
JP2000-175312 | 2000-06-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010091976A true KR20010091976A (ko) | 2001-10-23 |
KR100443879B1 KR100443879B1 (ko) | 2004-08-09 |
Family
ID=27481112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR10-2001-0012570A KR100443879B1 (ko) | 2000-03-13 | 2001-03-12 | 반도체 웨이퍼 가공장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6511895B2 (ko) |
KR (1) | KR100443879B1 (ko) |
DE (1) | DE10108388B4 (ko) |
TW (1) | TW492100B (ko) |
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KR100821781B1 (ko) * | 2005-08-05 | 2008-04-11 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 | 플라즈마 처리 장치 |
WO2014084472A1 (ko) * | 2012-11-30 | 2014-06-05 | 로체 시스템즈(주) | 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정 |
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TW492100B (en) * | 2000-03-13 | 2002-06-21 | Disco Corp | Semiconductor wafer processing apparatus |
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KR100447891B1 (ko) * | 2002-03-04 | 2004-09-08 | 강효상 | 반도체 웨이퍼의 건식 식각 방법 |
KR100479308B1 (ko) * | 2002-12-23 | 2005-03-28 | 삼성전자주식회사 | 기판상의 불순물을 포집하기 위한 장치 및 이를 이용한불순물 포집방법 |
JP4153325B2 (ja) * | 2003-02-13 | 2008-09-24 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
CN100388434C (zh) * | 2003-03-12 | 2008-05-14 | 东京毅力科创株式会社 | 半导体处理用的基板保持结构和等离子体处理装置 |
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JP2007073670A (ja) * | 2005-09-06 | 2007-03-22 | Disco Abrasive Syst Ltd | 水溶性樹脂被覆方法 |
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WO2017221631A1 (ja) * | 2016-06-23 | 2017-12-28 | 株式会社アルバック | 保持装置 |
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JPS63127531A (ja) * | 1986-11-17 | 1988-05-31 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH0810830B2 (ja) * | 1987-03-04 | 1996-01-31 | 株式会社東芝 | アナログ―ディジタル変換器 |
JPH05226308A (ja) * | 1992-02-18 | 1993-09-03 | Sony Corp | 半導体ウエハの裏面処理方法及びその装置 |
US5885138A (en) * | 1993-09-21 | 1999-03-23 | Ebara Corporation | Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device |
JP3326642B2 (ja) * | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
DE19505906A1 (de) * | 1995-02-21 | 1996-08-22 | Siemens Ag | Verfahren zum Damage-Ätzen der Rückseite einer Halbleiterscheibe bei geschützter Scheibenvorderseite |
JPH09223680A (ja) * | 1996-02-16 | 1997-08-26 | Disco Abrasive Syst Ltd | エッチング機能付き研磨装置 |
JP3679871B2 (ja) * | 1996-09-04 | 2005-08-03 | 株式会社荏原製作所 | ポリッシング装置及び搬送ロボット |
TW444275B (en) * | 1998-01-13 | 2001-07-01 | Toshiba Corp | Processing device, laser annealing device, laser annealing method, manufacturing device and substrate manufacturing device for panel display |
JP3401706B2 (ja) * | 1998-01-19 | 2003-04-28 | 株式会社東京精密 | 平面研削装置 |
US6159827A (en) * | 1998-04-13 | 2000-12-12 | Mitsui Chemicals, Inc. | Preparation process of semiconductor wafer |
JP2000003892A (ja) * | 1998-04-13 | 2000-01-07 | Mitsui Chemicals Inc | 半導体ウエハの製造方法 |
JP3987202B2 (ja) * | 1998-04-20 | 2007-10-03 | 株式会社岡本工作機械製作所 | ウエハの研削装置 |
JP2000015570A (ja) * | 1998-07-02 | 2000-01-18 | Disco Abrasive Syst Ltd | 研削装置 |
US6431807B1 (en) * | 1998-07-10 | 2002-08-13 | Novellus Systems, Inc. | Wafer processing architecture including single-wafer load lock with cooling unit |
JP4212707B2 (ja) * | 1998-11-26 | 2009-01-21 | スピードファム株式会社 | ウエハ平坦化システム及びウエハ平坦化方法 |
JP2000353676A (ja) * | 1999-06-14 | 2000-12-19 | Disco Abrasive Syst Ltd | 研削システム |
TW492100B (en) * | 2000-03-13 | 2002-06-21 | Disco Corp | Semiconductor wafer processing apparatus |
-
2001
- 2001-02-19 TW TW090103722A patent/TW492100B/zh not_active IP Right Cessation
- 2001-02-21 DE DE10108388A patent/DE10108388B4/de not_active Expired - Lifetime
- 2001-02-26 US US09/791,766 patent/US6511895B2/en not_active Expired - Lifetime
- 2001-03-12 KR KR10-2001-0012570A patent/KR100443879B1/ko active IP Right Grant
-
2002
- 2002-12-11 US US10/315,976 patent/US20030082914A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100751963B1 (ko) * | 2005-03-17 | 2007-08-24 | 실트로닉 아게 | 반도체 웨이퍼의 재료 제거 가공 방법 |
KR100821781B1 (ko) * | 2005-08-05 | 2008-04-11 | 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 | 플라즈마 처리 장치 |
WO2014084472A1 (ko) * | 2012-11-30 | 2014-06-05 | 로체 시스템즈(주) | 웨이퍼 식각 시스템 및 이를 이용한 웨이퍼 식각 공정 |
Also Published As
Publication number | Publication date |
---|---|
US20010021571A1 (en) | 2001-09-13 |
US6511895B2 (en) | 2003-01-28 |
DE10108388A1 (de) | 2001-10-11 |
US20030082914A1 (en) | 2003-05-01 |
KR100443879B1 (ko) | 2004-08-09 |
DE10108388B4 (de) | 2010-02-18 |
TW492100B (en) | 2002-06-21 |
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