KR20010030703A - 반도체 패키지 및 그에 있어서의 플립 칩 접합 방법 - Google Patents
반도체 패키지 및 그에 있어서의 플립 칩 접합 방법 Download PDFInfo
- Publication number
- KR20010030703A KR20010030703A KR1020007003151A KR20007003151A KR20010030703A KR 20010030703 A KR20010030703 A KR 20010030703A KR 1020007003151 A KR1020007003151 A KR 1020007003151A KR 20007003151 A KR20007003151 A KR 20007003151A KR 20010030703 A KR20010030703 A KR 20010030703A
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- South Korea
- Prior art keywords
- chip
- substrate
- bonding
- bumps
- semiconductor chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims description 79
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 239000012298 atmosphere Substances 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 238000005304 joining Methods 0.000 claims description 48
- 229910000679 solder Inorganic materials 0.000 claims description 43
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 24
- 230000007246 mechanism Effects 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 6
- 238000002788 crimping Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 description 15
- 239000003570 air Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000005476 soldering Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L2224/0612—Layout
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- H01L2224/06135—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
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- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1998/004337 WO2000019514A1 (fr) | 1998-09-28 | 1998-09-28 | Boitier de semiconducteur et procede correspondant de soudage de puce |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20010030703A true KR20010030703A (ko) | 2001-04-16 |
Family
ID=14209076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007003151A KR20010030703A (ko) | 1998-09-28 | 1998-09-28 | 반도체 패키지 및 그에 있어서의 플립 칩 접합 방법 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20010030703A (fr) |
CN (1) | CN1299518A (fr) |
WO (1) | WO2000019514A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030049284A (ko) * | 2001-12-14 | 2003-06-25 | 삼성전기주식회사 | 플립칩 본딩용 패키지기판 |
KR100691443B1 (ko) * | 2005-11-16 | 2007-03-09 | 삼성전기주식회사 | 플립칩 패키지 및 그 제조방법 |
KR100731459B1 (ko) * | 2003-02-10 | 2007-06-21 | 스카이워크스 솔루션즈, 인코포레이티드 | 반도체 다이 패키지 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI251313B (en) * | 2003-09-26 | 2006-03-11 | Seiko Epson Corp | Intermediate chip module, semiconductor device, circuit board, and electronic device |
US8106521B2 (en) | 2006-10-19 | 2012-01-31 | Panasonic Corporation | Semiconductor device mounted structure with an underfill sealing-bonding resin with voids |
WO2009009566A2 (fr) * | 2007-07-09 | 2009-01-15 | Texas Instruments Incorporated | Procédé de fabrication d'un dispositif à semi-conducteurs |
US8387674B2 (en) | 2007-11-30 | 2013-03-05 | Taiwan Semiconductor Manufacturing Comany, Ltd. | Chip on wafer bonder |
US8084853B2 (en) * | 2009-09-25 | 2011-12-27 | Mediatek Inc. | Semiconductor flip chip package utilizing wire bonding for net switching |
CN102237285B (zh) * | 2010-04-20 | 2016-05-18 | 台湾积体电路制造股份有限公司 | 晶片接合机 |
US8901736B2 (en) * | 2010-05-28 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strength of micro-bump joints |
JP5643036B2 (ja) * | 2010-09-14 | 2014-12-17 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
US20130119532A1 (en) * | 2011-11-11 | 2013-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bumps for Chip Scale Packaging |
US8975117B2 (en) * | 2012-02-08 | 2015-03-10 | Infineon Technologies Ag | Semiconductor device using diffusion soldering |
US9560771B2 (en) * | 2012-11-27 | 2017-01-31 | Omnivision Technologies, Inc. | Ball grid array and land grid array having modified footprint |
US10037941B2 (en) * | 2014-12-12 | 2018-07-31 | Qualcomm Incorporated | Integrated device package comprising photo sensitive fill between a substrate and a die |
JP6538596B2 (ja) | 2016-03-14 | 2019-07-03 | 東芝メモリ株式会社 | 電子部品の製造方法及び電子部品の製造装置 |
CN114184939B (zh) * | 2021-12-30 | 2024-06-11 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种适于超低温环境的芯片夹持装置 |
CN118070749B (zh) * | 2024-04-17 | 2024-07-23 | 淄博芯材集成电路有限责任公司 | 一种基板收缩方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02253627A (ja) * | 1989-03-27 | 1990-10-12 | Hitachi Ltd | 半導体装置 |
JPH02252250A (ja) * | 1989-03-27 | 1990-10-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体チップ端子接続用フィルムおよび半導体チップ端子接続方法 |
JPH05315400A (ja) * | 1992-05-12 | 1993-11-26 | Hitachi Ltd | 電子回路装置の接合装置 |
JP3506547B2 (ja) * | 1995-10-20 | 2004-03-15 | シチズン時計株式会社 | 半導体装置 |
JP3271500B2 (ja) * | 1995-12-18 | 2002-04-02 | セイコーエプソン株式会社 | 半導体装置 |
JPH09199538A (ja) * | 1996-01-17 | 1997-07-31 | Tokyo Tungsten Co Ltd | 半導体パッケージ |
JP3205703B2 (ja) * | 1996-06-25 | 2001-09-04 | シャープ株式会社 | 半導体装置 |
JPH1027827A (ja) * | 1996-07-10 | 1998-01-27 | Toshiba Corp | 半導体装置の製造方法 |
JPH10107078A (ja) * | 1996-09-30 | 1998-04-24 | Toshiba Electron Eng Corp | 電子部品の製造方法及び電子部品 |
-
1998
- 1998-09-28 KR KR1020007003151A patent/KR20010030703A/ko not_active Application Discontinuation
- 1998-09-28 WO PCT/JP1998/004337 patent/WO2000019514A1/fr not_active Application Discontinuation
- 1998-09-28 CN CN98814031A patent/CN1299518A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030049284A (ko) * | 2001-12-14 | 2003-06-25 | 삼성전기주식회사 | 플립칩 본딩용 패키지기판 |
KR100731459B1 (ko) * | 2003-02-10 | 2007-06-21 | 스카이워크스 솔루션즈, 인코포레이티드 | 반도체 다이 패키지 |
KR100691443B1 (ko) * | 2005-11-16 | 2007-03-09 | 삼성전기주식회사 | 플립칩 패키지 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN1299518A (zh) | 2001-06-13 |
WO2000019514A1 (fr) | 2000-04-06 |
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