US20130119532A1 - Bumps for Chip Scale Packaging - Google Patents

Bumps for Chip Scale Packaging Download PDF

Info

Publication number
US20130119532A1
US20130119532A1 US13/294,859 US201113294859A US2013119532A1 US 20130119532 A1 US20130119532 A1 US 20130119532A1 US 201113294859 A US201113294859 A US 201113294859A US 2013119532 A1 US2013119532 A1 US 2013119532A1
Authority
US
United States
Prior art keywords
semiconductor die
bump
formed
diameter
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/294,859
Inventor
Chun-Hung Lin
Yu-feng Chen
Tsung-Shu Lin
Han-Ping Pu
Hsien-Wei Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority to US13/294,859 priority Critical patent/US20130119532A1/en
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHEN, HSIEN-WEI, CHEN, YU-FENG, LIN, CHUN-HUNG, LIN, TSUNG-SHU, PU, HAN-PING
Publication of US20130119532A1 publication Critical patent/US20130119532A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0233Structure of the redistribution layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0233Structure of the redistribution layers
    • H01L2224/02331Multilayer structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/0239Material of the redistribution layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/023Redistribution layers [RDL] for bonding areas
    • H01L2224/024Material of the insulating layers therebetween
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/03Manufacturing methods
    • H01L2224/034Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/03444Manufacturing methods by blanket deposition of the material of the bonding area in gaseous form
    • H01L2224/0345Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/03Manufacturing methods
    • H01L2224/034Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346Plating
    • H01L2224/03462Electroplating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/0501Shape
    • H01L2224/05016Shape in side view
    • H01L2224/05018Shape in side view being a conformal layer on a patterned surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/0502Disposition
    • H01L2224/05024Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05075Plural internal layers
    • H01L2224/0508Plural internal layers being stacked
    • H01L2224/05085Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • H01L2224/05558Shape in side view conformal layer on a patterned surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05569Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0605Shape
    • H01L2224/06051Bonding areas having different shapes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06131Square or rectangular array being uniform, i.e. having a uniform pitch across the array
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06135Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13022Disposition the bump connector being at least partially embedded in the surface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13024Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1413Square or rectangular array
    • H01L2224/14131Square or rectangular array being uniform, i.e. having a uniform pitch across the array
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1413Square or rectangular array
    • H01L2224/14134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/14135Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/1413Square or rectangular array
    • H01L2224/14134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/14136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141Disposition
    • H01L2224/1412Layout
    • H01L2224/14179Corner adaptations, i.e. disposition of the bump connectors at the corners of the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/1705Shape
    • H01L2224/17051Bump connectors having different shapes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking

Abstract

A chip scale semiconductor device comprises a semiconductor die, a first bump and a second bump. The first bump having a first diameter and a first height is formed on an outer region of the semiconductor die. A second bump having a second diameter and a second height is formed on an inner region of the semiconductor die. The second diameter is greater than the first diameter while the second height is the same as the first height. By changing the shape of the bump, the stress and strain can be redistributed through the bump. As a result, the thermal cycling reliability of the chip scale semiconductor device is improved.

Description

    BACKGROUND
  • The semiconductor industry has experienced rapid growth due to continuous improvements in the integration density of a variety of electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). For the most part, this improvement in integration density has come from repeated reductions in minimum feature size, which allows more components to be integrated into a given area. As the demand for even smaller electronic devices has grown recently, there has grown a need for smaller and more creative packaging techniques of semiconductor dies.
  • As semiconductor technologies evolve, chip-scale or chip-size packaging based semiconductor devices have emerged as an effective alternative to further reduce the physical size of a semiconductor chip. In a chip-scale packaging based semiconductor device, the packaging is generated on the die with contacts provided by a variety of bumps. Much higher density can be achieved by employing chip-scale packaging based semiconductor devices. Furthermore, chip-scale packaging based semiconductor devices can achieve smaller form factors, cost-effectiveness, increased performance and lower power consumption.
  • A chip-scale packaging based semiconductor device may comprise a plurality of solder balls formed on a plurality of under bump metal (UBM) openings of a semiconductor die. The solder balls may be formed of tin and lead. Prior to a reflow process, the semiconductor device is picked and placed on a printed circuit board (PCB) after alignment. As a result, the plurality of solder balls on the chip-scale packaging based semiconductor device are aligned with the corresponding solder pads on the PCB board. By employing a hot air flow and appropriate pressure, the solder balls are heated and then melted so as to connect the semiconductor device with the PCB board. The chip-scale packaging technology has some advantages. One advantageous feature of chip-scale packaging is that chip-scale packaging techniques may reduce fabrication costs. Another advantageous feature of chip-scale packaging based multi-chip semiconductor devices is that parasitic losses are reduced by employing bumps sandwiched between a semiconductor device and a PCB board.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
  • FIG. 1 illustrates a top view and a cross sectional view of a bump structure having a chip scale packaging feature in accordance with an embodiment;
  • FIG. 2 illustrates a top view and a cross sectional view of a bump structure having a chip scale packaging feature in accordance with another embodiment; and
  • FIG. 3 illustrates a top view and a cross sectional view of a bump structure having a chip scale packaging feature in accordance with yet another embodiment.
  • Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the various embodiments and are not necessarily drawn to scale.
  • DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
  • The making and using of the present embodiments are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the disclosure, and do not limit the scope of the disclosure.
  • The present disclosure will be described with respect to embodiments in a specific context, a bump design technique for a chip scale package. The disclosure may also be applied, however, to a variety of packages of the semiconductor industry.
  • Referring initially to FIG. 1, a top view and a cross sectional view of a bump structure having a chip scale packaging feature is illustrated in accordance with an embodiment. As shown in FIG. 1, the bump structure is formed on a semiconductor die 100. The semiconductor die 100 comprises a substrate 192. The substrate 192 may be a silicon substrate. Alternatively, the substrate 192 may be a silicon-on-insulator substrate. The substrate 192 may further comprise a variety of electrical circuits (not shown). The electrical circuits formed on the substrate 192 may be any type of circuitry suitable for a particular application.
  • In accordance with an embodiment, the electrical circuits may include various n-type metal-oxide semiconductor (NMOS) and/or p-type metal-oxide semiconductor (PMOS) devices such as transistors, capacitors, resistors, diodes, photo-diodes, fuses and the like. The electrical circuits may be interconnected to perform one or more functions. The functions may include memory structures, processing structures, sensors, amplifiers, power distribution, input/output circuitry or the like. One of ordinary skill in the art will appreciate that the above examples are provided for illustrative purposes only to further explain applications of the present disclosure and are not meant to limit the present disclosure in any manner.
  • An interlayer dielectric layer 182 is formed on top of the substrate 192. The interlayer dielectric layer 182 may be formed, for example, of a low-K dielectric material, such as silicon oxide. The interlayer dielectric layer 182 may be formed by any suitable method known in the art, such as spinning, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD). It should also be noted that one skilled in the art will recognize that the interlayer dielectric layer 182 may further comprise a plurality of dielectric layers.
  • A bottom metallization layer 172 and a top metallization layer 152 are formed over the interlayer dielectric layer 182. As shown in FIG. 1, the bottom metallization layer 172 comprises a first metal line 174. Likewise, the top metallization layer 152 comprises a second metal line 162. Metal lines 174 and 162 are formed of metal materials such as copper or copper alloys and the like. It should be noted while FIG. 1 shows the bottom metallization layer 172 and the top metallization layer 152, one skilled in the art will recognize that one or more inter-metal dielectric layers (not shown) and the associated metallization layers (not shown) are formed between the bottom metallization layer 172 and the top metallization layer 152. Generally, the one or more inter-metal dielectric layers and the associated metallization layers are used to interconnect the electrical circuits in the substrate 192 to each other and to provide an external electrical connection.
  • A passivation layer 142 is formed on top of the top metallization layer 152. In accordance with an embodiment, the passivation layer 142 is formed of non-organic materials such as un-doped silicate glass, silicon nitride, silicon oxide and the like. An aluminum pad 160 may be formed on top of the passivation layer 142. Furthermore, the aluminum pad 160 may be connected to the top metal line 162 through a via hole 164. In accordance with an embodiment, the via hole 164 is fully filled with metallic materials such as copper, copper alloys, aluminum, silver, gold and any combinations thereof. The via hole 164 may be formed by suitable techniques such as CVD. Alternatively, the via hole 164 may formed by sputtering, electroplating and the like.
  • A first polymer layer 132 is formed on top of the passivation layer 142. The first polymer layer 132 is made of polymer materials such as epoxy, polyimide and the like. The first polymer layer 132 may be made by any suitable method known in the art such as spin coating. A redistribution layer 166 is formed on the first polymer layer 132. As shown in FIG. 1, the redistribution layer 166 connects the aluminum pad 160 with the top surface of the semiconductor die 100. More particularly, the redistribution layer 166 provides a conductive path between the metal lines (e.g., metal line 162) and the top surface of the semiconductor die 100 (e.g., UBM 116).
  • A second polymer layer 122 is formed on top of the first polymer layer 132. As shown in FIG. 1, both the redistribution layer 166 and the redistribution layer 164 are embedded in the second polymer layer 122. The redistribution layer 166 and the redistribution layer 164 are formed of metal materials such as aluminum, aluminum alloys, copper or copper alloys and the like. The second polymer layer 122 is patterned to form a plurality of openings. Furthermore, various under bump metal (UBM) structures (e.g., UBM 116) are formed on top of the openings. The UBM structures (e.g., UBM 116) are employed to connect the redistribution layers (e.g., redistribution layer 166) with various input and output terminals (e.g., bumps 106 and 104). Each UBM structure may further comprise a variety of sub-layers such as a seed layer (not shown), an adhesion layer (not shown) and/or the like. The UBM structures may be formed by any suitable techniques such as evaporation, electroplating and the like.
  • Bumps 104 and 106 are formed on top of the UBM structures 114 and 116 respectively. In accordance with an embodiment, the bumps 104 and 106 are solder balls. Throughout the description, for simplicity, bumps 104 and 106 are alternatively referred to as solder balls 104 and 106 respectively. The solder balls 104 and 106 may be made of any of suitable materials. In accordance with an embodiment, the solder balls 104 and 106 comprise SAC405. SAC405 comprises 95.5% Sn, 4.0% Ag and 0.5% Cu.
  • As shown in FIG. 1, after a reflow process, both solder balls 104 and 106 are heated and subsequently melted so as to connect the semiconductor die 100 with a printed circuit board (PCB) 102. It should be noted that the PCB 102 may have a different thermal expansion coefficient from the solder balls 104 and 106 as well as the semiconductor die 100. As a result, such a different thermal expansion coefficient may cause a relatively large stress and plastic strain at the solder joint between the solder balls 104, 106 and the PCB 102. Furthermore, the large stress and plastic strain accumulated over a plurality of temperature cycles on the solder balls 104 and 106 may lead to cracks in the solder joint areas between the solder balls 104, 106 and the PCB 102.
  • In order to redistribute the stress and strain described above evenly across the body of the solder balls (e.g., solder ball 104), solder balls on the top surface of a semiconductor die 100 may be configured such that an inner region comprises large solder balls (e.g., solder ball 106) and an outer region comprises small solder balls (e.g., solder ball 104). A top view of the semiconductor die 100 illustrates a solder ball layout in accordance with an embodiment. In the top view, the semiconductor die 100 is of a horizontal length W1 and a vertical length W2.
  • On the top surface of the semiconductor die 100, there may be a variety of solder balls formed on their corresponding UBM structures. As shown in FIG. 1, a plurality of small solder balls (e.g., solder ball 104) are formed on the outer region of the semiconductor die 100. Likewise, a plurality of large solder balls (e.g., solder ball 106) are formed on the inner region of the semiconductor die 100. It should be noted that in accordance with an embodiment, “a small solder ball” means its diameter is less than 90% of that of “a large solder ball.” In other words, when a large solder ball has a diameter of about 300 um, the corresponding small solder ball has a diameter equal to or less than 270 um. One advantageous feature of having small solder balls formed on the outer region of the semiconductor die 100 is that the small solder balls allow the semiconductor die 100 to have a fine pitch package as well as addition input and output terminals.
  • Furthermore, in accordance with an embodiment, the diameter of the small solder balls before a reflow process should be greater than the height of the large solder balls after the reflow process. For example, prior to a reflow process, the diameters of a large solder ball and a small solder ball are 250 um and 225 um respectively. After a reflow process, both solder balls are melted and sandwiched between the top surface of the semiconductor die 100 and the PCB 102. The height of the large solder ball after a reflow process is about 210.5 um. Therefore, by controlling the distance between the PCB 102 and the semiconductor die 100, reliable solder joints formed by small solder balls can be achieved.
  • There may be a variety of ways to define the border between an inner region and an outer region. In accordance with an embodiment, an outer region comprises four edge regions. Each edge region has a width (e.g., W3 and W4) approximately equal to or less than 20% of the corresponding length (e.g., W1 and W2) of the semiconductor die 100. By employing different solder balls on the top surface of the semiconductor die 100, after a reflow process, the outer bumps (e.g., solder ball 104) are thinner in comparison with their inner counterparts (e.g., solder ball 106). As a result, the stress derived from the thermal expansion difference between the PCB 102 and the semiconductor die 100 may be redistributed across the body of the solder ball 104 so that the possibility of cracks may be reduced. One advantageous feature of having small solder balls at the outer region of the semiconductor die 100 is that the small solder balls help to redistribute the stress and strain so as to improve thermal cycling reliability. In accordance with an embodiment, the accumulative plastic strain during one cycle of the temperature cycling test (TCT) at the solder joint between the semiconductor die 100 and the PCB 102 can be reduced by 16%.
  • FIG. 2 illustrates a top view and a cross sectional view of a bump structure having a chip scale packaging feature in accordance with another embodiment. The structure of the semiconductor die 200 shown in FIG. 2 is similar to the semiconductor die 100 shown in FIG. 1 except that the UBM structures (e.g., UBM structure 216) of the semiconductor die 200 is different from the UBM structures (e.g., UBM structure 116) of the semiconductor die 100. As shown in the top view (solder balls are removed in order to illustrate the UBM difference), a plurality of large UBM structures (e.g., UBM structure 216) are employed in the outer region of the semiconductor die 200. In contrast, a plurality of small UBM structures are employed in the inner region. In accordance with an embodiment, the small UBM structures (e.g., UBM structure 214) has a diameter less than or equal to 90% of that of the large UBM structures (e.g., UBM structure 216).
  • In accordance with an embodiment, solder balls (e.g., solder 204 and 206) having substantially identical size are formed on the UBM structures having different diameters. As a result, the solder balls at different regions may have different shapes after a reflow process. More particularly, the solder ball formed on a large UBM structure is stretched during a reflow process in comparison with the solder ball formed on a small UBM structure. As shown in FIG. 2, the solder balls (e.g., solder ball 206) formed on the outer region may have an hourglass shape. In contrast, the solder balls (e.g., solder ball 204) formed on the inner region may have a spherical shape. Such an hourglass shaped solder column sandwiched between the semiconductor die 200 and the PCB 102 helps to reduce the stress at the solder joint between the semiconductor die 200 and the PCB 102.
  • FIG. 3 illustrates a top view and a cross sectional view of a bump structure having a chip scale packaging feature in accordance with yet another embodiment. The structure of the semiconductor die 300 shown in FIG. 3 is similar to the semiconductor die 100 shown in FIG. 1 except that the allocation of smaller solder balls of the semiconductor die 300 is different from that of the semiconductor die 100. As shown in the top view, four small solder balls are formed on the four corners of the integrated chip die 300. In contrast, large solder balls are formed in the inner region. For similar reasons described above with respect to FIG. 1, the small solder balls of the semiconductor die 300 help to reduce the stress and strain at the solder joints between the small solder balls and the PCB 102 so as to reduce the possibility of cracks and improve thermal cycling reliability.
  • Although embodiments of the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims.
  • Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.

Claims (20)

1. A device comprising:
a semiconductor die;
a first bump having a first diameter on a first region of the semiconductor die; and
a second bump having a second diameter on a second region of the semiconductor die, wherein the second diameter is different from the first diameter.
2. The device of claim 1, wherein the first diameter is greater than the second diameter.
3. The device of claim 1, wherein:
the first region is an inner region of the semiconductor die; and
the second region is an outer region of the semiconductor die.
4. The device of claim 3, wherein the outer region has a width approximately equal to or less than one third of a width of the inner region.
5. The device of claim 4, wherein:
the first region is an inner region of the semiconductor die; and
the second region is a corner of the semiconductor die.
6. The device of claim 1, wherein:
the first bump is formed on a first under bump metal structure; and
the second bump is formed on a second under bump metal structure, wherein the first under bump metal structure is different from the second under bump metal structure.
7. The device of claim 6, wherein the second under bump metal structure has a diameter greater than a diameter of the first under bump metal structure.
8. A device comprising:
a semiconductor die;
a first bump having a first diameter and a first height formed adjacent to an edge of the semiconductor die; and
a second bump having a second diameter and a second height formed not adjacent to the edge of the semiconductor die, wherein the second bump is different from the first bump.
9. The device of claim 8, wherein the second diameter is greater than the first diameter.
10. The device of claim 8, wherein the first height is greater than the second height.
11. The device of claim 8, wherein:
the first bump is formed on an outer region of the semiconductor die; and
the second bump is formed on an inner region of the semiconductor die.
12. The device of claim 11, wherein the outer region has a width approximately equal to or less than one third of a width of the inner region.
13. The device of claim 8, wherein:
the first bump is formed on a first corner of the semiconductor die; and
the second bump is formed on an inner region of the semiconductor die.
14. The device of claim 8, wherein the semiconductor die comprises:
a substrate;
an interlayer dielectric layer formed on the substrate;
a plurality of metallization layers formed over the interlayer dielectric layer;
a passivation layer formed over the plurality of metallization layers; and
a polymer layer formed on the passivation layer, wherein a redistribution layer is formed in the polymer layer.
15. A structure comprising:
a semiconductor die;
a first under bump metal structure having a first diameter formed on an outer region of the semiconductor die; and
a second under bump metal structure having a second diameter formed on an inner region of the semiconductor die, wherein the first under bump metal structure is different from the second under bump metal structure.
16. The structure of claim 15, wherein the second diameter is greater than the first diameter.
17. The structure of claim 15, wherein the outer region has a width approximately equal to or less than one third of a width of the inner region.
18. The structure of claim 15, further comprising:
a first bump formed on the first under bump metal structure; and
a second bump formed on the second under metal structure.
19. The structure of claim 18, wherein:
the first bump is thinner than the second bump; and
the first bump is of an hourglass shape.
20. The structure of claim 15, wherein the semiconductor die comprises:
a substrate;
an interlayer dielectric layer formed on the substrate;
a plurality of metallization layers formed over the interlayer dielectric layer;
a passivation layer formed over the plurality of metallization layers; and
a polymer layer formed on the passivation layer, wherein a redistribution layer is formed in the polymer layer.
US13/294,859 2011-11-11 2011-11-11 Bumps for Chip Scale Packaging Abandoned US20130119532A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/294,859 US20130119532A1 (en) 2011-11-11 2011-11-11 Bumps for Chip Scale Packaging

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/294,859 US20130119532A1 (en) 2011-11-11 2011-11-11 Bumps for Chip Scale Packaging
CN201210041605.6A CN103107152B (en) 2011-11-11 2012-02-21 For the projection of wafer-level package
US14/204,659 US9553065B2 (en) 2011-11-11 2014-03-11 Bumps for chip scale packaging including under bump metal structures with different diameters

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/204,659 Continuation US9553065B2 (en) 2011-11-11 2014-03-11 Bumps for chip scale packaging including under bump metal structures with different diameters

Publications (1)

Publication Number Publication Date
US20130119532A1 true US20130119532A1 (en) 2013-05-16

Family

ID=48279807

Family Applications (2)

Application Number Title Priority Date Filing Date
US13/294,859 Abandoned US20130119532A1 (en) 2011-11-11 2011-11-11 Bumps for Chip Scale Packaging
US14/204,659 Active US9553065B2 (en) 2011-11-11 2014-03-11 Bumps for chip scale packaging including under bump metal structures with different diameters

Family Applications After (1)

Application Number Title Priority Date Filing Date
US14/204,659 Active US9553065B2 (en) 2011-11-11 2014-03-11 Bumps for chip scale packaging including under bump metal structures with different diameters

Country Status (2)

Country Link
US (2) US20130119532A1 (en)
CN (1) CN103107152B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8742578B2 (en) * 2012-07-19 2014-06-03 International Business Machines Corporation Solder volume compensation with C4 process
US8759210B2 (en) 2012-07-19 2014-06-24 International Business Machines Corporation Control of silver in C4 metallurgy with plating process
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US20160276278A1 (en) * 2013-03-15 2016-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices
US9799618B1 (en) 2016-10-12 2017-10-24 International Business Machines Corporation Mixed UBM and mixed pitch on a single die
US10014267B2 (en) 2015-06-12 2018-07-03 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170033964A (en) 2015-09-17 2017-03-28 삼성전자주식회사 Semiconductor devices having redistribution pads
US10388730B2 (en) * 2017-03-31 2019-08-20 Palo Alto Research Center Incorporated Plurality of electrodes on a substrate having different range of spacing
KR20190093998A (en) 2018-02-02 2019-08-12 삼성전자주식회사 Semiconductor device
CN109637990A (en) * 2018-11-16 2019-04-16 北京时代民芯科技有限公司 Wafer preparation method with different-diameter salient point

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2034703A1 (en) * 1990-01-23 1991-07-24 Masanori Nishiguchi Substrate for packaging a semiconductor device
JPH07307410A (en) * 1994-05-16 1995-11-21 Hitachi Ltd Semiconductor device
JPH11345905A (en) * 1998-06-02 1999-12-14 Mitsubishi Electric Corp Semiconductor device
JP2000100851A (en) * 1998-09-25 2000-04-07 Sony Corp Semiconductor substrate and manufacture thereof and structure and method for mounting semiconductor parts
JP3846611B2 (en) * 1998-09-25 2006-11-15 ソニー株式会社 Mounting semiconductor component, mounting structure and mounting method
KR20010030703A (en) * 1998-09-28 2001-04-16 가나이 쓰토무 Semiconductor package and flip chip bonding method therein
US20030001286A1 (en) * 2000-01-28 2003-01-02 Ryoichi Kajiwara Semiconductor package and flip chip bonding method therein
KR100568006B1 (en) * 2003-12-12 2006-04-07 삼성전자주식회사 Forming Method for Concave Solder Bump Structure of Flip Chip Package
TWI263351B (en) * 2005-09-20 2006-10-01 Siliconware Prec Ind Co Ltd Semiconductor package and fabrication method thereof
US7566650B2 (en) * 2005-09-23 2009-07-28 Stats Chippac Ltd. Integrated circuit solder bumping system
US8836146B2 (en) * 2006-03-02 2014-09-16 Qualcomm Incorporated Chip package and method for fabricating the same
US7564130B1 (en) * 2007-07-06 2009-07-21 National Semiconductor Corporation Power micro surface-mount device package

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8742578B2 (en) * 2012-07-19 2014-06-03 International Business Machines Corporation Solder volume compensation with C4 process
US8759210B2 (en) 2012-07-19 2014-06-24 International Business Machines Corporation Control of silver in C4 metallurgy with plating process
US20160276278A1 (en) * 2013-03-15 2016-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged Semiconductor Devices, Methods of Packaging Semiconductor Devices, and PoP Devices
US9570401B2 (en) * 2013-03-15 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
US10049989B2 (en) 2013-03-15 2018-08-14 Taiwan Semiconductor Manufacturing Company Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
US10529673B2 (en) 2013-03-15 2020-01-07 Taiwan Semiconductor Manufacturing Company Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US10014267B2 (en) 2015-06-12 2018-07-03 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
US9799618B1 (en) 2016-10-12 2017-10-24 International Business Machines Corporation Mixed UBM and mixed pitch on a single die
US10249586B2 (en) * 2016-10-12 2019-04-02 International Business Machines Corporation Mixed UBM and mixed pitch on a single die

Also Published As

Publication number Publication date
US20140191394A1 (en) 2014-07-10
CN103107152B (en) 2016-01-20
US9553065B2 (en) 2017-01-24
CN103107152A (en) 2013-05-15

Similar Documents

Publication Publication Date Title
US10529673B2 (en) Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices
US10276496B2 (en) Plurality of different size metal layers for a pad structure
US9530715B2 (en) Thermally enhanced structure for multi-chip device
US9269687B2 (en) Packaging methods and packaged semiconductor devices
US10192848B2 (en) Package assembly
US10522437B2 (en) Methods and apparatus for package with interposers
US9653531B2 (en) Methods of manufacturing a package
US10062659B2 (en) System and method for an improved fine pitch joint
KR101411813B1 (en) Semiconductor device and manufacturing method thereof
US10262964B2 (en) Interconnect structures and methods of forming same
US9373599B2 (en) Methods and apparatus for package on package devices
US10290600B2 (en) Dummy flip chip bumps for reducing stress
TWI520243B (en) Method of forming post passivation interconnects
US9165877B2 (en) Fan-out semiconductor package with copper pillar bumps
TWI478314B (en) Semiconductor device and method for forming a semiconductor device
US9391012B2 (en) Methods and apparatus for package with interposers
KR101423388B1 (en) Package on package devices and methods of packaging semiconductor dies
KR101447322B1 (en) Bump structures for multi-chip packaging
US9991218B2 (en) Connector structures of integrated circuits
US9397062B2 (en) Package on package bonding structure and method for forming the same
TWI503930B (en) Package on package devices and methods of packaging semiconductor dies
US9570368B2 (en) Method of manufacturing semiconductor package including forming a recessed region in a substrate
US9105552B2 (en) Package on package devices and methods of packaging semiconductor dies
US9412661B2 (en) Method for forming package-on-package structure
US10475731B2 (en) Package with metal-insulator-metal capacitor and method of manufacturing the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIN, CHUN-HUNG;CHEN, YU-FENG;LIN, TSUNG-SHU;AND OTHERS;SIGNING DATES FROM 20111027 TO 20111031;REEL/FRAME:027217/0668

STCB Information on status: application discontinuation

Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION