KR20010014841A - 반도체 집적회로장치 및 그 제조방법 - Google Patents
반도체 집적회로장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR20010014841A KR20010014841A KR1020000022683A KR20000022683A KR20010014841A KR 20010014841 A KR20010014841 A KR 20010014841A KR 1020000022683 A KR1020000022683 A KR 1020000022683A KR 20000022683 A KR20000022683 A KR 20000022683A KR 20010014841 A KR20010014841 A KR 20010014841A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- insulating film
- conductive base
- electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 209
- 238000004519 manufacturing process Methods 0.000 title claims description 140
- 239000004065 semiconductor Substances 0.000 title claims description 129
- 230000008569 process Effects 0.000 title claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 137
- 239000003990 capacitor Substances 0.000 claims abstract description 137
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 137
- 238000005530 etching Methods 0.000 claims abstract description 104
- 238000009713 electroplating Methods 0.000 claims abstract description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 189
- 239000000758 substrate Substances 0.000 claims description 127
- 239000004020 conductor Substances 0.000 claims description 105
- 229910052751 metal Inorganic materials 0.000 claims description 89
- 239000002184 metal Substances 0.000 claims description 89
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 52
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 52
- 230000004888 barrier function Effects 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 28
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 12
- 229910002367 SrTiO Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 904
- 238000001312 dry etching Methods 0.000 description 49
- 238000003860 storage Methods 0.000 description 31
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 239000007772 electrode material Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229910021332 silicide Inorganic materials 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 15
- 239000007795 chemical reaction product Substances 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 2
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 229910018967 Pt—Rh Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 TaSiN Chemical class 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000013527 bean curd Nutrition 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11123927A JP2000315778A (ja) | 1999-04-30 | 1999-04-30 | 半導体集積回路装置およびその製造方法 |
| JP99-123927 | 1999-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010014841A true KR20010014841A (ko) | 2001-02-26 |
Family
ID=14872795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020000022683A Ceased KR20010014841A (ko) | 1999-04-30 | 2000-04-28 | 반도체 집적회로장치 및 그 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6426255B1 (enExample) |
| JP (1) | JP2000315778A (enExample) |
| KR (1) | KR20010014841A (enExample) |
| TW (1) | TW459382B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3285007B2 (ja) * | 1999-05-07 | 2002-05-27 | 日本電気株式会社 | めっき装置用検出器 |
| US6781184B2 (en) * | 2001-11-29 | 2004-08-24 | Symetrix Corporation | Barrier layers for protecting metal oxides from hydrogen degradation |
| KR100434334B1 (ko) * | 2002-09-13 | 2004-06-04 | 주식회사 하이닉스반도체 | 듀얼 마스크를 이용한 반도체 소자의 커패시터 제조 방법 |
| KR100532437B1 (ko) * | 2003-05-26 | 2005-11-30 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조 방법 |
| JP2005005510A (ja) * | 2003-06-12 | 2005-01-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| KR100722787B1 (ko) * | 2005-04-25 | 2007-05-30 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| JP4322912B2 (ja) | 2006-11-24 | 2009-09-02 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| KR101109028B1 (ko) | 2007-02-21 | 2012-02-09 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
| JP2012089744A (ja) * | 2010-10-21 | 2012-05-10 | Elpida Memory Inc | 半導体装置の製造方法 |
| CN108269762B (zh) * | 2016-12-30 | 2021-06-08 | 联华电子股份有限公司 | 半导体存储装置的制作方法 |
| TWI745054B (zh) * | 2020-08-27 | 2021-11-01 | 華邦電子股份有限公司 | 半導體元件及其製造方法 |
| CN114141770B (zh) * | 2020-09-03 | 2024-10-29 | 华邦电子股份有限公司 | 半导体元件及其制造方法 |
| WO2025219844A1 (ja) * | 2024-04-19 | 2025-10-23 | 株式会社半導体エネルギー研究所 | 記憶装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5585300A (en) * | 1994-08-01 | 1996-12-17 | Texas Instruments Incorporated | Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes |
| JPH08335680A (ja) * | 1995-06-06 | 1996-12-17 | Texas Instr Inc <Ti> | 高密度、高誘電率メモリ装置内の内部電極形成方法並びに装置 |
| JPH0995791A (ja) * | 1995-10-04 | 1997-04-08 | Sasakura Eng Co Ltd | 固体高分子電解質水電解装置及びその電極構造 |
| JPH09162370A (ja) * | 1995-12-14 | 1997-06-20 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US6064469A (en) * | 1996-08-30 | 2000-05-16 | Applied Graphics Technologies, Inc. | Apparatus and method for processing images using a reciprocating easel |
| KR100227843B1 (ko) * | 1997-01-22 | 1999-11-01 | 윤종용 | 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법 |
| KR100243285B1 (ko) * | 1997-02-27 | 2000-02-01 | 윤종용 | 고유전 커패시터 및 그 제조방법 |
| JPH10289985A (ja) | 1997-04-14 | 1998-10-27 | Mitsubishi Electric Corp | キャパシタを有する半導体装置の製造方法 |
| JP3484324B2 (ja) * | 1997-07-29 | 2004-01-06 | シャープ株式会社 | 半導体メモリ素子 |
| KR100269306B1 (ko) * | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
| US6144053A (en) * | 1999-01-20 | 2000-11-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a capacitor with a high dielectric constant film |
-
1999
- 1999-04-30 JP JP11123927A patent/JP2000315778A/ja active Pending
-
2000
- 2000-04-13 US US09/549,085 patent/US6426255B1/en not_active Expired - Fee Related
- 2000-04-13 TW TW089106899A patent/TW459382B/zh not_active IP Right Cessation
- 2000-04-28 KR KR1020000022683A patent/KR20010014841A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW459382B (en) | 2001-10-11 |
| JP2000315778A (ja) | 2000-11-14 |
| US6426255B1 (en) | 2002-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20000428 |
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