JP2000315778A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

Info

Publication number
JP2000315778A
JP2000315778A JP11123927A JP12392799A JP2000315778A JP 2000315778 A JP2000315778 A JP 2000315778A JP 11123927 A JP11123927 A JP 11123927A JP 12392799 A JP12392799 A JP 12392799A JP 2000315778 A JP2000315778 A JP 2000315778A
Authority
JP
Japan
Prior art keywords
film
conductive
insulating film
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11123927A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000315778A5 (enExample
Inventor
Isamu Asano
勇 浅野
Yoshitaka Nakamura
吉孝 中村
Yuzuru Oji
譲 大路
Tatsuyuki Saito
達之 齋藤
Takashi Yunogami
隆 湯之上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11123927A priority Critical patent/JP2000315778A/ja
Priority to US09/549,085 priority patent/US6426255B1/en
Priority to TW089106899A priority patent/TW459382B/zh
Priority to KR1020000022683A priority patent/KR20010014841A/ko
Publication of JP2000315778A publication Critical patent/JP2000315778A/ja
Publication of JP2000315778A5 publication Critical patent/JP2000315778A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11123927A 1999-04-30 1999-04-30 半導体集積回路装置およびその製造方法 Pending JP2000315778A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11123927A JP2000315778A (ja) 1999-04-30 1999-04-30 半導体集積回路装置およびその製造方法
US09/549,085 US6426255B1 (en) 1999-04-30 2000-04-13 Process for making a semiconductor integrated circuit device having a dynamic random access memory
TW089106899A TW459382B (en) 1999-04-30 2000-04-13 Semiconductor integrated circuit device and manufacture thereof
KR1020000022683A KR20010014841A (ko) 1999-04-30 2000-04-28 반도체 집적회로장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11123927A JP2000315778A (ja) 1999-04-30 1999-04-30 半導体集積回路装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006111935A Division JP2006203255A (ja) 2006-04-14 2006-04-14 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000315778A true JP2000315778A (ja) 2000-11-14
JP2000315778A5 JP2000315778A5 (enExample) 2005-04-07

Family

ID=14872795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11123927A Pending JP2000315778A (ja) 1999-04-30 1999-04-30 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (1) US6426255B1 (enExample)
JP (1) JP2000315778A (enExample)
KR (1) KR20010014841A (enExample)
TW (1) TW459382B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745868B2 (en) 2006-11-24 2010-06-29 Elpida Memory, Inc. Semiconductor device and method of forming the same
JP2012089744A (ja) * 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
WO2025219844A1 (ja) * 2024-04-19 2025-10-23 株式会社半導体エネルギー研究所 記憶装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3285007B2 (ja) * 1999-05-07 2002-05-27 日本電気株式会社 めっき装置用検出器
US6781184B2 (en) * 2001-11-29 2004-08-24 Symetrix Corporation Barrier layers for protecting metal oxides from hydrogen degradation
KR100434334B1 (ko) * 2002-09-13 2004-06-04 주식회사 하이닉스반도체 듀얼 마스크를 이용한 반도체 소자의 커패시터 제조 방법
KR100532437B1 (ko) * 2003-05-26 2005-11-30 삼성전자주식회사 반도체 메모리 소자 및 그 제조 방법
JP2005005510A (ja) * 2003-06-12 2005-01-06 Toshiba Corp 半導体装置及びその製造方法
KR100722787B1 (ko) * 2005-04-25 2007-05-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR101109028B1 (ko) 2007-02-21 2012-02-09 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
CN108269762B (zh) * 2016-12-30 2021-06-08 联华电子股份有限公司 半导体存储装置的制作方法
TWI745054B (zh) * 2020-08-27 2021-11-01 華邦電子股份有限公司 半導體元件及其製造方法
CN114141770B (zh) * 2020-09-03 2024-10-29 华邦电子股份有限公司 半导体元件及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116032A (ja) * 1994-08-01 1996-05-07 Texas Instr Inc <Ti> マイクロ電子構造体とその製造法
JPH08335680A (ja) * 1995-06-06 1996-12-17 Texas Instr Inc <Ti> 高密度、高誘電率メモリ装置内の内部電極形成方法並びに装置
JPH09162370A (ja) * 1995-12-14 1997-06-20 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10209399A (ja) * 1997-01-22 1998-08-07 Samsung Electron Co Ltd 半導体素子のコンタクト配線方法及びこれを利用したキャパシタの製造方法
JPH10242399A (ja) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd 高誘電キャパシタ及びその製造方法
JPH1154718A (ja) * 1997-07-31 1999-02-26 Samsung Electron Co Ltd 低温処理により安定化される金属酸化膜からなる緩衝膜を具備した集積回路装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0995791A (ja) * 1995-10-04 1997-04-08 Sasakura Eng Co Ltd 固体高分子電解質水電解装置及びその電極構造
US6064469A (en) * 1996-08-30 2000-05-16 Applied Graphics Technologies, Inc. Apparatus and method for processing images using a reciprocating easel
JPH10289985A (ja) 1997-04-14 1998-10-27 Mitsubishi Electric Corp キャパシタを有する半導体装置の製造方法
JP3484324B2 (ja) * 1997-07-29 2004-01-06 シャープ株式会社 半導体メモリ素子
US6144053A (en) * 1999-01-20 2000-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor with a high dielectric constant film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116032A (ja) * 1994-08-01 1996-05-07 Texas Instr Inc <Ti> マイクロ電子構造体とその製造法
JPH08335680A (ja) * 1995-06-06 1996-12-17 Texas Instr Inc <Ti> 高密度、高誘電率メモリ装置内の内部電極形成方法並びに装置
JPH09162370A (ja) * 1995-12-14 1997-06-20 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10209399A (ja) * 1997-01-22 1998-08-07 Samsung Electron Co Ltd 半導体素子のコンタクト配線方法及びこれを利用したキャパシタの製造方法
JPH10242399A (ja) * 1997-02-27 1998-09-11 Samsung Electron Co Ltd 高誘電キャパシタ及びその製造方法
JPH1154718A (ja) * 1997-07-31 1999-02-26 Samsung Electron Co Ltd 低温処理により安定化される金属酸化膜からなる緩衝膜を具備した集積回路装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745868B2 (en) 2006-11-24 2010-06-29 Elpida Memory, Inc. Semiconductor device and method of forming the same
JP2012089744A (ja) * 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
US9147686B2 (en) 2010-10-21 2015-09-29 Ps4 Luxco S.A.R.L. Method for forming semiconductor device
WO2025219844A1 (ja) * 2024-04-19 2025-10-23 株式会社半導体エネルギー研究所 記憶装置

Also Published As

Publication number Publication date
TW459382B (en) 2001-10-11
KR20010014841A (ko) 2001-02-26
US6426255B1 (en) 2002-07-30

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