KR20000068590A - 반도체 디바이스 어셈블리 및 회로 - Google Patents
반도체 디바이스 어셈블리 및 회로 Download PDFInfo
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- KR20000068590A KR20000068590A KR1019997002339A KR19997002339A KR20000068590A KR 20000068590 A KR20000068590 A KR 20000068590A KR 1019997002339 A KR1019997002339 A KR 1019997002339A KR 19997002339 A KR19997002339 A KR 19997002339A KR 20000068590 A KR20000068590 A KR 20000068590A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
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- 239000004020 conductor Substances 0.000 claims abstract description 22
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
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- 239000000758 substrate Substances 0.000 description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010380 TiNi Inorganic materials 0.000 description 1
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- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (11)
- 반도체 디바이스(device) 조립체에 있어서,외피 내에 제 1 및 제 2 소자 몸체와, 탑재 패드(pad)와, 리드 프레임(lead frame)의 전도체 리드를 포함하되,상기 제 1 소자 몸체는 하부 주 전극에 대해 상기 제 1 소자 몸체의 반대편 주 표면에 위치한 상부 주 전극 및 제어 전극을 구비하는 각각의 반도체 소자를 포함하고, 상기 제 2 소자 몸체는 하부 주 전극에 대해 상기 제 2 소자 몸체의 반대편 주 표면에 적어도 상부 주 전극을 구비하는 반도체 소자를 포함하며, 상기 제 1 및 상기 제 2 소자 몸체의 상부 주 전극 및 제어 전극은 각각 상기 리드 프레임의 개별적인 전도체 리드로부터 개별적인 전기적 연결부가 본딩(bonding)된 개별적인 본딩 패드를 구비하고, 상기 제 1 소자 몸체는 상기 탑재 패드에 본딩된 상기 제 1 소자 몸체의 하부 주 전극을 구비하는 상기 본딩 패드 상에 탑재되며 상기 제 2 소자 몸체는 상기 제 1 소자 몸체의 일부 상에 탑재되어 상기 제 1 소자 몸체의 상부 주 전극 및 제어 전극의 본딩 패드를 노출시키는데, 상기 제 2 소자 몸체의 하부 전극은 상기 제 1 소자 몸체의 상부 주 전극에 본딩되는 반도체 디바이스 어셈블리.
- 제 1 항에 있어서,상기 제 1 소자 몸체가 이의 상기 반대편 주 표면에 인접하며 상기 제 2 소자 몸체가 탑재된 곳에 인접하는 온도 감지기를 구비하는 과열 보호 회로를 포함하는 반도체 디바이스 어셈블리.
- 제 1 항 혹은 제 2 항에 있어서,상기 제 1 소자 몸체가 두 개의 반도체 소자를 포함하며 상기 제 2 소자 몸체가 상기 제 1 소자 몸체의 상기 두 개의 반도체 소자 중 하나의 위치에 탑재되는데, 상기 두 개의 반도체 소자는 상기 제 1 소자 몸체의 하나의 주 표면에 공통 하부 주 전극을 구비하며 또한 이들 각각은 상기 반대편 주 표면에 개별적인 상부 주 전극을 구비하는 반도체 디바이스 어셈블리.
- 제 3 항에 있어서,제 3 소자 몸체가 상기 두 개의 반도체 소자 중 다른 하나가 있는 상기 제 1 소자 몸체의 일부 상에 탑재되고, 상기 제 3 소자 몸체가 하부 주 전극에 대해 상기 제 3 소자 몸체의 반대편 주 표면에 위치한 상부 주 전극 및 제어 전극을 구비하는 반도체 소자를 포함하며, 상기 두 개의 반도체 소자 중 상기 다른 하나의 상부 주 전극 및 제어 전극의 본딩 패드를 노출시키면서 개별적인 전기적 연결부가 상기 리드 프레임의 개별적인 전도체 리드로부터 상기 제 3 소자 몸체의 상부 주 전극 및 제어 전극에 본딩되고 상기 제 3 소자 몸체의 하부 전극이 상기 두 개의 반도체 소자 중 상기 다른 하나의 상부 주 전극에 본딩되는 반도체 디바이스 어셈블리.
- 제 3 항 혹은 제 4 항에 있어서,상기 제 1 소자 몸체의 두 개의 소자가 이에 대한 공통 본딩 패드를 갖는 제어 전극을 구비하는 반도체 디바이스 어셈블리.
- 제 1 항에 있어서,상기 제 2 소자 몸체의 소자는 이의 상부 주 전극으로서 상기 동일한 주 표면에 위치하며, 상기 리드 프레임의 개별적인 전도체 리드로부터 개별적인 전기적 연결부가 본딩되는 본딩 패드를 갖는 제어 전극을 구비하는 반도체 디바이스 어셈블리.
- 제 1 항에 있어서,전기적 열적 전도성 접착제 혹은 땜납으로 이루어진 매개 박막이 상기 제 1 소자 몸체의 상부 주 전극을 상기 제 1 소자 몸체 상에 탑재된 상기 제 1 소자 몸체의 하부 주 전극에 본딩시키는 반도체 디바이스 어셈블리.
- 제 6 항을 따르는 반도체 디바이스 조립체를 포함하며 전기 모터(motor)를 구동시키기 위한 반브리지(half-bridge) 구동 회로에 있어서,상기 모터가 제 1 소자 몸체의 개별적인 전도체 리드를 통해 상기 제 1 소자 몸체의 상부 주 전극의 본딩 패드에 연결되는 반브리지 구동 회로.
- 제 3 항을 따르는 반도체 디바이스 조립체를 포함하며 솔레노이드 코일(solenoid coil)을 구동시키기 위한 솔레노이드 구동 회로에 있어서,상기 솔레노이드 코일이 제 1 소자 몸체의 개별적인 전도체 리드를 통해 상기 제 1 소자 몸체의 상부 주 전극의 본딩 패드에 연결되는 솔레노이드 구동 회로.
- 제 4 항을 따르는 반도체 디바이스 조립체를 포함하며 전기 모터를 구동시키기 위한 전브리지(full-bridge) 구동 회로에 있어서,상기 모터가 제 1 소자 몸체의 개별적인 전도체 리드를 통해 상기 제 1 소자 몸체의 두 개의 소자의 상부 주 전극의 본딩 패드에 연결되는 전브리지 구동 회로.
- 제 1 항을 따르는 반도체 디바이스 조립체를 포함하며 전압 수준 컴버터 회로에 있어서,출력 전압 레벨 단자가 제 1 소자의 개별적인 전도체 리드를 통해 상기 제 1 소자 몸체의 상부 주 전극의 본딩 패드로부터 연결되는 전압 수준 컨버터 회로.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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GB9715168A GB9715168D0 (en) | 1997-07-19 | 1997-07-19 | Semiconductor device assemblies and circuits |
GB9715168.2 | 1997-07-19 | ||
GB9801240.4 | 1998-01-22 | ||
GBGB9801240.4A GB9801240D0 (en) | 1998-01-22 | 1998-01-22 | Semiconductor device assemblies and circuits |
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KR20000068590A true KR20000068590A (ko) | 2000-11-25 |
KR100632137B1 KR100632137B1 (ko) | 2006-10-19 |
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KR1019997002339A KR100632137B1 (ko) | 1997-07-19 | 1998-06-29 | 반도체 디바이스 어셈블리, 하프 브리지 구동 회로, 솔레노이드 구동 회로, 풀 브리지 구동 회로 및 전압 레벨 변환기 회로 |
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US (1) | US6055148A (ko) |
EP (1) | EP0927433B1 (ko) |
JP (1) | JP4014652B2 (ko) |
KR (1) | KR100632137B1 (ko) |
DE (1) | DE69832359T2 (ko) |
WO (1) | WO1999004433A2 (ko) |
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- 1998-06-29 EP EP98925881A patent/EP0927433B1/en not_active Expired - Lifetime
- 1998-06-29 DE DE69832359T patent/DE69832359T2/de not_active Expired - Fee Related
- 1998-06-29 JP JP50678599A patent/JP4014652B2/ja not_active Expired - Lifetime
- 1998-06-29 KR KR1019997002339A patent/KR100632137B1/ko not_active IP Right Cessation
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Also Published As
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DE69832359T2 (de) | 2006-08-03 |
US6055148A (en) | 2000-04-25 |
EP0927433A2 (en) | 1999-07-07 |
KR100632137B1 (ko) | 2006-10-19 |
EP0927433B1 (en) | 2005-11-16 |
JP2001501043A (ja) | 2001-01-23 |
JP4014652B2 (ja) | 2007-11-28 |
DE69832359D1 (de) | 2005-12-22 |
WO1999004433A3 (en) | 1999-04-15 |
WO1999004433A2 (en) | 1999-01-28 |
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