KR20000058021A - 화학적 기계적 연마 처리 및 부품 - Google Patents

화학적 기계적 연마 처리 및 부품 Download PDF

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Publication number
KR20000058021A
KR20000058021A KR1020000006525A KR20000006525A KR20000058021A KR 20000058021 A KR20000058021 A KR 20000058021A KR 1020000006525 A KR1020000006525 A KR 1020000006525A KR 20000006525 A KR20000006525 A KR 20000006525A KR 20000058021 A KR20000058021 A KR 20000058021A
Authority
KR
South Korea
Prior art keywords
polishing
slurry
layer
substrate
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020000006525A
Other languages
English (en)
Korean (ko)
Inventor
레이몬드알. 진
제프리디. 데이비드
프레드씨. 레데커
토마스에이치. 오스터헬드
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR20000058021A publication Critical patent/KR20000058021A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020000006525A 1999-02-11 2000-02-11 화학적 기계적 연마 처리 및 부품 Withdrawn KR20000058021A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11976399P 1999-02-11 1999-02-11
US60/119,763 1999-02-11

Publications (1)

Publication Number Publication Date
KR20000058021A true KR20000058021A (ko) 2000-09-25

Family

ID=22386234

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000006525A Withdrawn KR20000058021A (ko) 1999-02-11 2000-02-11 화학적 기계적 연마 처리 및 부품

Country Status (6)

Country Link
US (1) US6435942B1 (https=)
EP (1) EP1068928A3 (https=)
JP (1) JP4575539B2 (https=)
KR (1) KR20000058021A (https=)
SG (1) SG87886A1 (https=)
TW (1) TW457168B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100408537B1 (ko) * 1999-11-05 2003-12-06 엔이씨 일렉트로닉스 코포레이션 반도체 장치의 제조 방법에 사용하는 연마 공정
KR100487917B1 (ko) * 2002-05-20 2005-05-06 주식회사 하이닉스반도체 반도체소자의 화학적 기계적 연마방법
KR100757119B1 (ko) * 2005-12-20 2007-09-10 동부일렉트로닉스 주식회사 상감법에 의한 구리 금속배선의 형성방법

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KR20010076353A (ko) * 2000-01-18 2001-08-11 조셉 제이. 스위니 2단계 화학 기계적 연마공정의 광학적 모니터링 방법
US6280288B1 (en) * 2000-02-04 2001-08-28 Norton Company Process for determining optimum grinding conditions
US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6593240B1 (en) * 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
US6609950B2 (en) * 2000-07-05 2003-08-26 Ebara Corporation Method for polishing a substrate
US6699785B2 (en) * 2000-11-18 2004-03-02 Advanced Micro Devices, Inc. Conductor abrasiveless chemical-mechanical polishing in integrated circuit interconnects
DE10103062A1 (de) * 2001-01-24 2002-08-01 Promos Technologies Inc Chemisch-mechanisches Polierverfahren für emulsionsfreie feste Schleifkissen
US6595830B1 (en) * 2001-03-26 2003-07-22 Advanced Micro Devices, Inc. Method of controlling chemical mechanical polishing operations to control erosion of insulating materials
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US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
DE10149916B4 (de) * 2001-10-10 2007-01-25 Infineon Technologies Ag Verfahren zum Planarisieren von Prozessflächen in Halbleitereinrichtungen
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US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
JP2006513573A (ja) * 2003-01-10 2006-04-20 スリーエム イノベイティブ プロパティズ カンパニー 化学的機械的平坦化用途向けのパッド構成体
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US7906418B2 (en) * 2003-12-03 2011-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having substantially planar contacts and body
US7153744B2 (en) * 2003-12-03 2006-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming self-aligned poly for embedded flash
KR100570060B1 (ko) * 2003-12-29 2006-04-10 주식회사 하이닉스반도체 반도체소자의 랜딩플러그콘택 형성 방법
US8403727B1 (en) * 2004-03-31 2013-03-26 Lam Research Corporation Pre-planarization system and method
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
KR100614773B1 (ko) * 2004-12-28 2006-08-22 삼성전자주식회사 화학 기계적 연마 방법
WO2006085423A1 (ja) * 2005-02-10 2006-08-17 Nikon Corporation Ｃｍｐ研磨方法、ｃｍｐ研磨装置、ｓｔｉ構造を有する積層基板の製造方法、及び半導体デバイスの製造方法
US7297632B2 (en) * 2005-03-17 2007-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Scratch reduction for chemical mechanical polishing
US7297047B2 (en) * 2005-12-01 2007-11-20 Applied Materials, Inc. Bubble suppressing flow controller with ultrasonic flow meter
US20070269908A1 (en) * 2006-05-17 2007-11-22 Hsin-Kun Chu Method for in-line controlling hybrid chemical mechanical polishing process
US8114774B2 (en) 2006-06-19 2012-02-14 Nxp B.V. Semiconductor device, and semiconductor device obtained by such a method
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US8303375B2 (en) 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
CN101786260B (zh) * 2009-01-22 2012-03-28 中芯国际集成电路制造(上海)有限公司 消除浅沟道隔离中角落效应的研磨方法
US20140024293A1 (en) * 2012-07-19 2014-01-23 Jimin Zhang Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
US10513006B2 (en) 2013-02-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. High throughput CMP platform
CN103692327A (zh) * 2013-11-29 2014-04-02 广东鸿泰科技股份有限公司 压铸模具散热筋条的抛光方法
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
CN103753356A (zh) * 2014-01-21 2014-04-30 曼盛包装（上海）有限公司 一种透明pmma注射成型合模线的抛光消除方法
KR102677387B1 (ko) * 2018-03-13 2024-06-24 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 연마 동안 진동들의 모니터링
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane
US11573452B2 (en) 2020-11-20 2023-02-07 Applied Materials, Inc. Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US11881539B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11586067B2 (en) 2020-11-20 2023-02-21 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11908678B2 (en) * 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane
US12508685B2 (en) * 2023-04-27 2025-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device fabrication methods and devices for forming the same

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100408537B1 (ko) * 1999-11-05 2003-12-06 엔이씨 일렉트로닉스 코포레이션 반도체 장치의 제조 방법에 사용하는 연마 공정
KR100487917B1 (ko) * 2002-05-20 2005-05-06 주식회사 하이닉스반도체 반도체소자의 화학적 기계적 연마방법
KR100757119B1 (ko) * 2005-12-20 2007-09-10 동부일렉트로닉스 주식회사 상감법에 의한 구리 금속배선의 형성방법

Also Published As

Publication number Publication date
JP2000301454A (ja) 2000-10-31
US6435942B1 (en) 2002-08-20
EP1068928A2 (en) 2001-01-17
TW457168B (en) 2001-10-01
SG87886A1 (en) 2002-04-16
EP1068928A3 (en) 2003-08-13
JP4575539B2 (ja) 2010-11-04

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