KR20000023474A - 정전 척 - Google Patents
정전 척 Download PDFInfo
- Publication number
- KR20000023474A KR20000023474A KR1019990041437A KR19990041437A KR20000023474A KR 20000023474 A KR20000023474 A KR 20000023474A KR 1019990041437 A KR1019990041437 A KR 1019990041437A KR 19990041437 A KR19990041437 A KR 19990041437A KR 20000023474 A KR20000023474 A KR 20000023474A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- substrate
- area
- main surface
- electrostatic chuck
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Manipulator (AREA)
Abstract
Description
Claims (8)
- 기판 내에 매설된 금속으로 이루어지는 동심원 형상의 내측 전극 및 외측 전극과:상기 기판의 주면 상에 형성된 복수의 엠보스와;상기 기판의 상기 복수의 엠보스가 형성된 주면측의 외주 에지부 상의 대략 전체에 걸쳐 상기 복수의 엠보스와 동일한 재료로 형성된 볼록 형상부를 구비하고,상기 내측 전극 및 외측 전극은 각각 양 또는 음의 서로 다른 전위를 가짐과 동시에, 상기 엠보스와 볼록 형상부에서 피처리물을 지지하며,상기 기판의 주면 상의 내측 전극이 위치하는 영역에 형성된 상기 복수의 엠보스 상면의 면적의 합계와, 상기 기판의 주면 상의 외측 전극이 위치하는 영역에 형성된 상기 복수의 엠보스 상면의 면적의 합계 및 상기 기판의 주면의 외주 에지부 상의 외측 전극이 위치하는 영역에 형성된 상기 볼록 형상부 상면의 면적의 합계를 동일하게 구성한 것을 특징으로 하는 정전 척.
- 제1항에 있어서, 상기 엠보스와 볼록 형상부로 형성된 상기 피처리물과 기판의 주면과의 공간에 백 사이드 가스가 흐르도록 한 것인 정전 척.
- 제1항 또는 제2항에 있어서, 상기 내측 전극과 외측 전극의 면적을 동일하게 하고, 상기 기판의 주면 상의 내측 전극이 위치하는 영역의 엠보스 밀도를 상기 기판의 주면 상의 외측 전극이 위치하는 영역의 엠보스 밀도보다 크게 한 것인 정전 척.
- 제1항 또는 제2항에 있어서, 상기 내측 전극의 면적을 외측 전극의 면적보다도 크게 하며, 상기 기판의 주면 상의 내측 전극이 위치하는 영역의 엠보스 밀도를 상기 기판의 주면 상의 외측 전극이 위치하는 영역의 엠보스 밀도와 동일하게 한 것인 정전 척.
- 제2항에 있어서, 상기 외측 전극의 면적을 내측 전극의 면적보다 작게 하고, 상기 기판의 주면 상의 외측 전극이 위치하는 영역의 전극 단위 면적당의 상기 복수의 엠보스 상면의 면적의 합계를 상기 기판의 주면 상의 내측 전극이 위치하는 영역의 전극 단위 면적당의 상기 복수의 엠보스 상면의 면적의 합계보다 크게 한 것인 정전 척.
- 제1항, 제2항 또는 제5항 중 어느 한 항에 있어서, 상기 내측 전극은 음의 전위를 갖고, 상기 외측 전극은 양의 전위를 갖는 것인 정전 척.
- 제3항에 있어서, 상기 내측 전극은 음의 전위를 갖고, 상기 외측 전극은 양의 전위를 갖는 것인 정전 척.
- 제4항에 있어서, 상기 내측 전극은 음의 전위를 갖고, 상기 외측 전극은 양의 전위를 갖는 것인 정전 척.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP98-274506 | 1998-09-29 | ||
JP27450698A JP3983387B2 (ja) | 1998-09-29 | 1998-09-29 | 静電チャック |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000023474A true KR20000023474A (ko) | 2000-04-25 |
KR100369871B1 KR100369871B1 (ko) | 2003-01-29 |
Family
ID=17542655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1999-0041437A KR100369871B1 (ko) | 1998-09-29 | 1999-09-28 | 정전 척 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6370004B1 (ko) |
EP (1) | EP0993024B1 (ko) |
JP (1) | JP3983387B2 (ko) |
KR (1) | KR100369871B1 (ko) |
TW (1) | TW577861B (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426111B1 (ko) * | 2000-10-19 | 2004-04-08 | 니뽄 가이시 가부시키가이샤 | 세라믹 히터 |
KR100515702B1 (ko) * | 2001-11-19 | 2005-09-15 | 니뽄 가이시 가부시키가이샤 | 세라믹 히터, 그 제조 방법 및 반도체 제조 장치용 가열장치 |
KR100804178B1 (ko) | 2003-07-15 | 2008-02-18 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 디바이스 제조방법 및 그에 의해 제작된디바이스 |
KR101413898B1 (ko) * | 2012-11-06 | 2014-06-30 | 엔지케이 인슐레이터 엘티디 | 서셉터 |
KR20170003683A (ko) * | 2014-05-16 | 2017-01-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 페디스털 유체-기반 열 제어 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7164100B2 (en) * | 1998-06-15 | 2007-01-16 | The Trustees Of Dartmouth College | High-frequency de-icing of cableways |
US7087876B2 (en) * | 1998-06-15 | 2006-08-08 | The Trustees Of Dartmouth College | High-frequency melting of interfacial ice |
US6693786B2 (en) * | 1998-06-15 | 2004-02-17 | The Trustees Of Dartmouth College | Modification of ice friction in transportation systems |
JP2001302330A (ja) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | セラミック基板 |
JP3626933B2 (ja) * | 2001-02-08 | 2005-03-09 | 東京エレクトロン株式会社 | 基板載置台の製造方法 |
KR100511854B1 (ko) | 2002-06-18 | 2005-09-02 | 아네르바 가부시키가이샤 | 정전 흡착 장치 |
JP2004282047A (ja) * | 2003-02-25 | 2004-10-07 | Kyocera Corp | 静電チャック |
US7430104B2 (en) * | 2003-03-11 | 2008-09-30 | Appiled Materials, Inc. | Electrostatic chuck for wafer metrology and inspection equipment |
US7151658B2 (en) * | 2003-04-22 | 2006-12-19 | Axcelis Technologies, Inc. | High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer |
US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
EP1498780A3 (en) * | 2003-07-15 | 2005-04-06 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
DE602004008009T2 (de) | 2003-11-05 | 2008-04-30 | Asml Netherlands B.V. | Lithographischer Apparat |
EP1530089B1 (en) | 2003-11-05 | 2011-04-06 | ASML Netherlands B.V. | Lithographic apparatus and method for clamping an article |
US20080073032A1 (en) * | 2006-08-10 | 2008-03-27 | Akira Koshiishi | Stage for plasma processing apparatus, and plasma processing apparatus |
US8422193B2 (en) * | 2006-12-19 | 2013-04-16 | Axcelis Technologies, Inc. | Annulus clamping and backside gas cooled electrostatic chuck |
US9036326B2 (en) * | 2008-04-30 | 2015-05-19 | Axcelis Technologies, Inc. | Gas bearing electrostatic chuck |
TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
CN102449754B (zh) | 2009-05-15 | 2015-10-21 | 恩特格林斯公司 | 具有聚合物突出物的静电吸盘 |
US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
US9025305B2 (en) | 2010-05-28 | 2015-05-05 | Entegris, Inc. | High surface resistivity electrostatic chuck |
USD761745S1 (en) * | 2013-06-28 | 2016-07-19 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
JP6308858B2 (ja) * | 2014-04-25 | 2018-04-11 | 東京エレクトロン株式会社 | 静電チャック、載置台、プラズマ処理装置 |
JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
USD776801S1 (en) * | 2014-06-24 | 2017-01-17 | Kobe Steel, Ltd | Heat exchanger tube |
USD793971S1 (en) | 2015-03-27 | 2017-08-08 | Veeco Instruments Inc. | Wafer carrier with a 14-pocket configuration |
USD793972S1 (en) | 2015-03-27 | 2017-08-08 | Veeco Instruments Inc. | Wafer carrier with a 31-pocket configuration |
USD778247S1 (en) * | 2015-04-16 | 2017-02-07 | Veeco Instruments Inc. | Wafer carrier with a multi-pocket configuration |
JP1549880S (ko) * | 2015-08-06 | 2016-05-23 | ||
JP1549882S (ko) * | 2015-08-18 | 2016-05-23 | ||
JP1550115S (ko) * | 2015-08-18 | 2016-05-23 | ||
CN114551322A (zh) * | 2017-03-10 | 2022-05-27 | 台湾积体电路制造股份有限公司 | 静电式晶圆吸附座及其制造方法 |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
USD860146S1 (en) * | 2017-11-30 | 2019-09-17 | Veeco Instruments Inc. | Wafer carrier with a 33-pocket configuration |
USD854506S1 (en) | 2018-03-26 | 2019-07-23 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD858469S1 (en) | 2018-03-26 | 2019-09-03 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD860147S1 (en) | 2018-03-26 | 2019-09-17 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD866491S1 (en) | 2018-03-26 | 2019-11-12 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
USD863239S1 (en) | 2018-03-26 | 2019-10-15 | Veeco Instruments Inc. | Chemical vapor deposition wafer carrier with thermal cover |
TWD223375S (zh) * | 2021-03-29 | 2023-02-01 | 大陸商北京北方華創微電子裝備有限公司 | 靜電卡盤 |
Family Cites Families (17)
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US4551192A (en) * | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
JP3129452B2 (ja) * | 1990-03-13 | 2001-01-29 | 富士電機株式会社 | 静電チャック |
FR2661039B1 (fr) * | 1990-04-12 | 1997-04-30 | Commissariat Energie Atomique | Porte-substrat electrostatique. |
JPH05226462A (ja) | 1992-02-18 | 1993-09-03 | Fujitsu Ltd | 静電チャック |
JPH05267436A (ja) | 1992-03-19 | 1993-10-15 | Fujitsu Ltd | 静電チャック |
JP2503364B2 (ja) * | 1992-08-20 | 1996-06-05 | 富士通株式会社 | ウエハの静電吸着装置、ウエハの静電吸着方法、ウエハの離脱方法及びドライエッチング方法 |
JPH06310589A (ja) * | 1993-04-26 | 1994-11-04 | Sony Corp | 静電吸着方法及び静電吸着装置 |
JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
JPH07153825A (ja) * | 1993-11-29 | 1995-06-16 | Toto Ltd | 静電チャック及びこの静電チャックを用いた被吸着体の処理方法 |
JPH0855900A (ja) | 1994-08-11 | 1996-02-27 | Fujitsu Ltd | 静電吸着方法とその装置と半導体装置の製造方法 |
JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
JPH09213777A (ja) * | 1996-01-31 | 1997-08-15 | Kyocera Corp | 静電チャック |
JPH09237827A (ja) * | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 静電吸着装置及びそれを用いた電子ビーム露光装置 |
US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
JP3911787B2 (ja) * | 1996-09-19 | 2007-05-09 | 株式会社日立製作所 | 試料処理装置及び試料処理方法 |
TW334609B (en) * | 1996-09-19 | 1998-06-21 | Hitachi Ltd | Electrostatic chuck, method and device for processing sanyle use the same |
US5880923A (en) * | 1997-06-09 | 1999-03-09 | Applied Materials Inc. | Method and apparatus for improved retention of a semiconductor wafer within a semiconductor wafer processing system |
-
1998
- 1998-09-29 JP JP27450698A patent/JP3983387B2/ja not_active Expired - Lifetime
-
1999
- 1999-09-03 TW TW088115200A patent/TW577861B/zh not_active IP Right Cessation
- 1999-09-27 US US09/407,051 patent/US6370004B1/en not_active Expired - Lifetime
- 1999-09-28 KR KR10-1999-0041437A patent/KR100369871B1/ko active IP Right Grant
- 1999-09-28 EP EP99307620.7A patent/EP0993024B1/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100426111B1 (ko) * | 2000-10-19 | 2004-04-08 | 니뽄 가이시 가부시키가이샤 | 세라믹 히터 |
KR100515702B1 (ko) * | 2001-11-19 | 2005-09-15 | 니뽄 가이시 가부시키가이샤 | 세라믹 히터, 그 제조 방법 및 반도체 제조 장치용 가열장치 |
KR100804178B1 (ko) | 2003-07-15 | 2008-02-18 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 디바이스 제조방법 및 그에 의해 제작된디바이스 |
KR101413898B1 (ko) * | 2012-11-06 | 2014-06-30 | 엔지케이 인슐레이터 엘티디 | 서셉터 |
KR20170003683A (ko) * | 2014-05-16 | 2017-01-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 페디스털 유체-기반 열 제어 |
Also Published As
Publication number | Publication date |
---|---|
EP0993024B1 (en) | 2013-08-07 |
US20020027762A1 (en) | 2002-03-07 |
JP2000106392A (ja) | 2000-04-11 |
US6370004B1 (en) | 2002-04-09 |
KR100369871B1 (ko) | 2003-01-29 |
EP0993024A3 (en) | 2002-07-17 |
EP0993024A2 (en) | 2000-04-12 |
TW577861B (en) | 2004-03-01 |
JP3983387B2 (ja) | 2007-09-26 |
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