KR102666761B1 - 배기 장치, 처리 장치 및 배기 방법 - Google Patents

배기 장치, 처리 장치 및 배기 방법 Download PDF

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KR102666761B1
KR102666761B1 KR1020180154550A KR20180154550A KR102666761B1 KR 102666761 B1 KR102666761 B1 KR 102666761B1 KR 1020180154550 A KR1020180154550 A KR 1020180154550A KR 20180154550 A KR20180154550 A KR 20180154550A KR 102666761 B1 KR102666761 B1 KR 102666761B1
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processing
exhaust
space
wing member
processed
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KR20190066593A (ko
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가즈야 나가세키
가즈키 모야마
도시야 마츠다
나오카즈 후루야
다츠로 오시타
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도쿄엘렉트론가부시키가이샤
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Priority to KR1020240061627A priority Critical patent/KR20240070490A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01L21/67017—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/02—
    • H01L21/67098—
    • H01L21/67276—
    • H01L21/67739—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1924—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control
    • H10P72/1926—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
KR1020180154550A 2017-12-05 2018-12-04 배기 장치, 처리 장치 및 배기 방법 Active KR102666761B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020240061627A KR20240070490A (ko) 2017-12-05 2024-05-10 배기 장치, 처리 장치 및 배기 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017233152A JP6967954B2 (ja) 2017-12-05 2017-12-05 排気装置、処理装置及び排気方法
JPJP-P-2017-233152 2017-12-05

Related Child Applications (1)

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KR1020240061627A Division KR20240070490A (ko) 2017-12-05 2024-05-10 배기 장치, 처리 장치 및 배기 방법

Publications (2)

Publication Number Publication Date
KR20190066593A KR20190066593A (ko) 2019-06-13
KR102666761B1 true KR102666761B1 (ko) 2024-05-16

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KR1020180154550A Active KR102666761B1 (ko) 2017-12-05 2018-12-04 배기 장치, 처리 장치 및 배기 방법
KR1020240061627A Pending KR20240070490A (ko) 2017-12-05 2024-05-10 배기 장치, 처리 장치 및 배기 방법

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Country Link
US (3) US11315770B2 (https=)
JP (1) JP6967954B2 (https=)
KR (2) KR102666761B1 (https=)
CN (2) CN110010437B (https=)
TW (2) TWI794346B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6388182B1 (ja) * 2017-07-25 2018-09-12 Smc株式会社 ゲートバルブの取付構造
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
TWI901580B (zh) * 2019-03-15 2025-10-21 美商蘭姆研究公司 用於蝕刻反應器的渦輪分子泵及陰極組件
JP7292115B2 (ja) * 2019-06-07 2023-06-16 東京エレクトロン株式会社 温度調整装置及び温度制御方法。
CN113130284B (zh) * 2019-12-31 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体刻蚀设备
US11521832B2 (en) * 2020-01-10 2022-12-06 COMET Technologies USA, Inc. Uniformity control for radio frequency plasma processing systems
JP7407645B2 (ja) 2020-04-03 2024-01-04 東京エレクトロン株式会社 プラズマ処理装置
CN111430281B (zh) * 2020-05-25 2023-03-31 中国科学院微电子研究所 一种反应腔室、反应腔室的控制方法及半导体加工设备
JP7525230B2 (ja) 2020-10-21 2024-07-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12165907B2 (en) * 2020-11-19 2024-12-10 Applied Materials, Inc. Apparatus for rotating substrates
JP7586598B2 (ja) * 2021-01-08 2024-11-19 東京エレクトロン株式会社 排気リングアセンブリ及びプラズマ処理装置
JP7561067B2 (ja) * 2021-03-17 2024-10-03 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20230265560A1 (en) * 2022-02-23 2023-08-24 Applied Materials, Inc. Pumping liner and methods of manufacture and use thereof
US12488968B2 (en) * 2022-04-22 2025-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP7831935B2 (ja) 2022-07-28 2026-03-17 東京エレクトロン株式会社 プラズマ処理装置
JP2024130246A (ja) * 2023-03-14 2024-09-30 国立大学法人東海国立大学機構 表面処理装置
KR20250009123A (ko) * 2023-07-10 2025-01-17 한화정밀기계 주식회사 기판 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002239443A (ja) * 2001-02-15 2002-08-27 Able:Kk スピンコーター
JP2005207275A (ja) * 2004-01-21 2005-08-04 Anelva Corp 真空ポンプ及びこれを備えた基板処理装置

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913328A (ja) * 1982-07-15 1984-01-24 Nec Corp ドライエツチング装置
JPS60140764U (ja) * 1984-02-29 1985-09-18 株式会社日立製作所 プラズマ処理装置
JPS63186875A (ja) * 1987-01-29 1988-08-02 Tadahiro Omi 表面反応成膜装置
US5354179A (en) * 1990-08-01 1994-10-11 Matsushita Electric Industrial Co., Ltd. Fluid rotating apparatus
JPH055492A (ja) * 1991-06-28 1993-01-14 Matsushita Electric Ind Co Ltd 流体回転装置
US5226731A (en) * 1992-05-28 1993-07-13 Electric Power Research Institute Apparatus for measuring rotor exhaust gas bulk temperature in a combustion turbine and method therefor
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JP3331749B2 (ja) * 1994-06-27 2002-10-07 松下電器産業株式会社 真空ポンプ
KR200184162Y1 (ko) * 1997-12-22 2000-08-01 김영환 반도체 건식각장비의 배기장치
JPH11297651A (ja) 1998-04-13 1999-10-29 Sony Corp 枚葉スピン式ウェーハ洗浄装置
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
JP2000183037A (ja) 1998-12-11 2000-06-30 Tokyo Electron Ltd 真空処理装置
JP3484371B2 (ja) 1999-03-30 2004-01-06 ビーオーシーエドワーズテクノロジーズ株式会社 ターボ分子ポンプ
JP2001035798A (ja) * 1999-07-16 2001-02-09 Kobe Steel Ltd 成膜装置
SG97943A1 (en) * 1999-10-04 2003-08-20 Ebara Corp Vacuum exhaust system
JP2001193914A (ja) * 2000-01-11 2001-07-17 Kanegafuchi Chem Ind Co Ltd プラズマｃｖｄ装置からの可燃性廃ガスの燃焼処理方法とそのためのシステム
DE10046697A1 (de) * 2000-09-21 2002-04-11 Bosch Gmbh Robert Flügel aus Kunststoff für eine Flügelzellen-Vakuumpumpe
JP4222747B2 (ja) * 2000-10-03 2009-02-12 株式会社荏原製作所 真空ポンプ
US6703729B2 (en) * 2001-08-15 2004-03-09 General Electric Company Reverse flow stator ventilation system for superconducting synchronous machine
US7717684B2 (en) * 2003-08-21 2010-05-18 Ebara Corporation Turbo vacuum pump and semiconductor manufacturing apparatus having the same
US7107998B2 (en) * 2003-10-16 2006-09-19 Novellus Systems, Inc. Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus
US7276122B2 (en) * 2004-04-21 2007-10-02 Mattson Technology, Inc. Multi-workpiece processing chamber
KR100856159B1 (ko) * 2004-05-27 2008-09-03 도쿄엘렉트론가부시키가이샤 기판 처리 장치
US7183227B1 (en) * 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7396412B2 (en) * 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
US7927066B2 (en) * 2005-03-02 2011-04-19 Tokyo Electron Limited Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component
US20060213566A1 (en) * 2005-03-25 2006-09-28 Johnson David J Vacuum insulated exhaust system
DE502005004449D1 (de) * 2005-03-31 2008-07-31 Siemens Ag Verfahren zum Aufbringen von Fasermatten auf die Oberfläche oder in eine Vertiefung eines Bauteiles
ATE471395T1 (de) * 2005-04-01 2010-07-15 Siemens Ag Schichtsystem
US20070017445A1 (en) * 2005-07-19 2007-01-25 Takako Takehara Hybrid PVD-CVD system
US8366829B2 (en) * 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
ATE400674T1 (de) * 2006-01-10 2008-07-15 Siemens Ag Kaltspritzanlage und kaltspritzverfahren mit moduliertem gasstrom
US20080066859A1 (en) 2006-08-30 2008-03-20 Michiaki Kobayashi Plasma processing apparatus capable of adjusting pressure within processing chamber
JP4997925B2 (ja) * 2006-11-08 2012-08-15 日新電機株式会社 シリコンドット形成方法及び装置並びにシリコンドット及び絶縁膜付き基板の形成方法及び装置
KR101410819B1 (ko) * 2007-07-10 2014-06-24 주성엔지니어링(주) 구동 가능한 배플을 가지는 기판처리장치 및 이를 이용한배기방법
FR2923946A1 (fr) * 2007-11-21 2009-05-22 Alcatel Lucent Sas Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondant
US8087907B2 (en) * 2008-03-26 2012-01-03 Ebara Corporation Turbo vacuum pump
JP5086192B2 (ja) * 2008-07-01 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
JP5460982B2 (ja) * 2008-07-30 2014-04-02 東京エレクトロン株式会社 弁体、粒子進入阻止機構、排気制御装置及び基板処理装置
WO2010021307A1 (ja) * 2008-08-19 2010-02-25 エドワーズ株式会社 真空ポンプ
JP2010174779A (ja) 2009-01-30 2010-08-12 Hitachi High-Technologies Corp 真空処理装置
JP2010186891A (ja) * 2009-02-12 2010-08-26 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理装置のメンテナンス方法及びプラズマ処理装置の組み立て方法
CN101566077B (zh) * 2009-06-04 2012-05-02 湖南省湘电锅炉压力容器检验中心有限公司 一种汽轮机末级叶片及其制备方法
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
KR101083448B1 (ko) 2009-10-29 2011-11-14 주식회사 뉴파워 프라즈마 다중 기판처리챔버
KR20110047086A (ko) * 2009-10-29 2011-05-06 주식회사 뉴파워 프라즈마 기판 이송 유닛 및 이를 포함하는 다중 기판 처리 시스템
KR101010196B1 (ko) * 2010-01-27 2011-01-21 에스엔유 프리시젼 주식회사 진공 증착 장비
US8721798B2 (en) * 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
JP5878876B2 (ja) * 2010-12-10 2016-03-08 エドワーズ株式会社 真空ポンプ
JP5710318B2 (ja) * 2011-03-03 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置
KR20130046648A (ko) * 2011-10-28 2013-05-08 세메스 주식회사 기판 처리 장치
KR102102003B1 (ko) * 2012-05-25 2020-04-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 플라즈마 처리 방법
US20140051253A1 (en) * 2012-08-14 2014-02-20 Lam Research Corporation Plasma baffle ring for a plasma processing apparatus and method of use
JP2014056987A (ja) 2012-09-13 2014-03-27 Tokyo Electron Ltd プラズマ処理装置
JP6208141B2 (ja) * 2012-09-26 2017-10-04 エドワーズ株式会社 ロータ、及び、このロータを備えた真空ポンプ
JP6077286B2 (ja) * 2012-11-30 2017-02-08 エドワーズ株式会社 電磁回転装置及び該電磁回転装置を備えた真空ポンプ
JP6735058B2 (ja) * 2013-07-31 2020-08-05 エドワーズ株式会社 真空ポンプ
US9184029B2 (en) 2013-09-03 2015-11-10 Lam Research Corporation System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
JP6258656B2 (ja) * 2013-10-17 2018-01-10 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP6305825B2 (ja) * 2014-05-12 2018-04-04 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
SG11201704367QA (en) * 2015-01-02 2017-07-28 Applied Materials Inc Processing chamber
JP2017056862A (ja) * 2015-09-17 2017-03-23 日東電工株式会社 航空機窓用機能性フィルム、航空機窓構造体、および航空機窓の機能化方法
KR20170066080A (ko) * 2015-12-04 2017-06-14 삼성전자주식회사 배플 플레이트, 플라스마 챔버, 기판 처리 장치 및 기판 처리 방법
WO2017098823A1 (ja) * 2015-12-07 2017-06-15 東京エレクトロン株式会社 基板洗浄装置
CN105441878B (zh) * 2016-01-05 2018-12-21 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备
JP6664269B2 (ja) * 2016-04-14 2020-03-13 東京エレクトロン株式会社 加熱装置およびターボ分子ポンプ
KR102499085B1 (ko) 2016-05-04 2023-02-10 삼성전자주식회사 진공 펌프
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
TWI901580B (zh) * 2019-03-15 2025-10-21 美商蘭姆研究公司 用於蝕刻反應器的渦輪分子泵及陰極組件

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002239443A (ja) * 2001-02-15 2002-08-27 Able:Kk スピンコーター
JP2005207275A (ja) * 2004-01-21 2005-08-04 Anelva Corp 真空ポンプ及びこれを備えた基板処理装置

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