KR102516586B1 - 다이 본딩 장치 및 반도체 장치의 제조 방법 - Google Patents

다이 본딩 장치 및 반도체 장치의 제조 방법 Download PDF

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KR102516586B1
KR102516586B1 KR1020210030130A KR20210030130A KR102516586B1 KR 102516586 B1 KR102516586 B1 KR 102516586B1 KR 1020210030130 A KR1020210030130 A KR 1020210030130A KR 20210030130 A KR20210030130 A KR 20210030130A KR 102516586 B1 KR102516586 B1 KR 102516586B1
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die
substrate
bonding
imaging device
image
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KR20210118742A (ko
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히데하루 고바시
고지 호사까
마사아끼 요시야마
유따 오노
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파스포드 테크놀로지 주식회사
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    • H01L21/67144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L21/52—
    • H01L21/67288—
    • H01L21/67721—
    • H01L21/6836—
    • H01L22/12—
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H01L2221/68368—

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Die Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020210030130A 2020-03-23 2021-03-08 다이 본딩 장치 및 반도체 장치의 제조 방법 Active KR102516586B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020051130A JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法
JPJP-P-2020-051130 2020-03-23

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Publication Number Publication Date
KR20210118742A KR20210118742A (ko) 2021-10-01
KR102516586B1 true KR102516586B1 (ko) 2023-04-03

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JP (1) JP7437987B2 (https=)
KR (1) KR102516586B1 (https=)
CN (1) CN113436986B (https=)
TW (1) TWI765517B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373686B (zh) * 2022-03-21 2022-06-14 北京芯士联半导体科技有限公司 基板的接合方法
CN120315056B (zh) * 2025-06-13 2025-08-15 北京现龙科技有限公司 基于料带圆孔引导对比度和透光检测芯片的方法及系统

Citations (5)

* Cited by examiner, † Cited by third party
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JP2001024008A (ja) 1999-07-09 2001-01-26 Fuji Photo Film Co Ltd 発光部品のボンディング方法および装置
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
JP2011257222A (ja) 2010-06-08 2011-12-22 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置
JP2014211440A (ja) 2014-06-02 2014-11-13 株式会社日立製作所 表面検査装置およびその方法
JP2018011048A (ja) * 2016-07-05 2018-01-18 キヤノンマシナリー株式会社 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法

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JPH03192800A (ja) * 1989-12-21 1991-08-22 Sharp Corp プリント基板の部品実装認識方法
JPH10209227A (ja) * 1997-01-20 1998-08-07 Sony Corp 半導体集積回路の検査システム、半導体集積回路の検査装置、および半導体集積回路の検査方法
JP6120094B2 (ja) * 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
KR101501129B1 (ko) * 2013-08-23 2015-03-12 주식회사 고영테크놀러지 기판 검사 장치
US20170234837A1 (en) * 2014-10-24 2017-08-17 Renishaw Plc Acoustic apparatus and method
WO2016090311A1 (en) * 2014-12-05 2016-06-09 Kla-Tencor Corporation Apparatus, method and computer program product for defect detection in work pieces
JP6685126B2 (ja) * 2015-12-24 2020-04-22 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6658051B2 (ja) * 2016-02-16 2020-03-04 三菱電機株式会社 ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法
SG11201900112TA (en) * 2016-07-05 2019-02-27 Canon Machinery Inc Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method
JP6846958B2 (ja) * 2017-03-09 2021-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6975551B2 (ja) * 2017-05-18 2021-12-01 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7082862B2 (ja) * 2017-07-27 2022-06-09 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および半導体製造システム
JP7010633B2 (ja) * 2017-09-19 2022-01-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7102271B2 (ja) * 2018-07-17 2022-07-19 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024008A (ja) 1999-07-09 2001-01-26 Fuji Photo Film Co Ltd 発光部品のボンディング方法および装置
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
JP2011257222A (ja) 2010-06-08 2011-12-22 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置
JP2014211440A (ja) 2014-06-02 2014-11-13 株式会社日立製作所 表面検査装置およびその方法
JP2018011048A (ja) * 2016-07-05 2018-01-18 キヤノンマシナリー株式会社 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法

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Publication number Publication date
JP7437987B2 (ja) 2024-02-26
KR20210118742A (ko) 2021-10-01
JP2021150586A (ja) 2021-09-27
CN113436986B (zh) 2024-02-20
TW202138790A (zh) 2021-10-16
TWI765517B (zh) 2022-05-21
CN113436986A (zh) 2021-09-24

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