TWI765517B - 晶粒接合裝置及半導體裝置的製造方法 - Google Patents

晶粒接合裝置及半導體裝置的製造方法 Download PDF

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Publication number
TWI765517B
TWI765517B TW110100364A TW110100364A TWI765517B TW I765517 B TWI765517 B TW I765517B TW 110100364 A TW110100364 A TW 110100364A TW 110100364 A TW110100364 A TW 110100364A TW I765517 B TWI765517 B TW I765517B
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Taiwan
Prior art keywords
die
substrate
bonding
illumination
imaging device
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TW110100364A
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English (en)
Chinese (zh)
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TW202138790A (zh
Inventor
小橋英晴
保坂浩二
吉山仁晃
小野悠太
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日商捷進科技有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Die Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW110100364A 2020-03-23 2021-01-06 晶粒接合裝置及半導體裝置的製造方法 TWI765517B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-051130 2020-03-23
JP2020051130A JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW202138790A TW202138790A (zh) 2021-10-16
TWI765517B true TWI765517B (zh) 2022-05-21

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TW110100364A TWI765517B (zh) 2020-03-23 2021-01-06 晶粒接合裝置及半導體裝置的製造方法

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JP (1) JP7437987B2 (https=)
KR (1) KR102516586B1 (https=)
CN (1) CN113436986B (https=)
TW (1) TWI765517B (https=)

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* Cited by examiner, † Cited by third party
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CN114373686B (zh) * 2022-03-21 2022-06-14 北京芯士联半导体科技有限公司 基板的接合方法
CN120315056B (zh) * 2025-06-13 2025-08-15 北京现龙科技有限公司 基于料带圆孔引导对比度和透光检测芯片的方法及系统

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TW201735209A (zh) * 2015-12-24 2017-10-01 捷進科技有限公司 半導體製造裝置及半導體裝置的製造方法
TW201903909A (zh) * 2017-03-09 2019-01-16 日商捷進科技有限公司 黏晶裝置及半導體裝置的製造方法
TW201911448A (zh) * 2017-05-18 2019-03-16 日商捷進科技有限公司 半導體製造裝置及半導體裝置的製造方法
US20190302033A1 (en) * 2014-12-05 2019-10-03 Kla-Tencor Corporation Apparatus, method and computer program product for defect detection in work pieces
TW201941315A (zh) * 2018-03-26 2019-10-16 日商捷進科技有限公司 黏晶裝置及半導體裝置的製造方法

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JP3851468B2 (ja) 1999-07-09 2006-11-29 富士写真フイルム株式会社 発光部品のボンディング方法および装置
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
JP5525336B2 (ja) 2010-06-08 2014-06-18 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
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US20170234837A1 (en) * 2014-10-24 2017-08-17 Renishaw Plc Acoustic apparatus and method
US20190302033A1 (en) * 2014-12-05 2019-10-03 Kla-Tencor Corporation Apparatus, method and computer program product for defect detection in work pieces
TW201735209A (zh) * 2015-12-24 2017-10-01 捷進科技有限公司 半導體製造裝置及半導體裝置的製造方法
TW201903909A (zh) * 2017-03-09 2019-01-16 日商捷進科技有限公司 黏晶裝置及半導體裝置的製造方法
TW201941316A (zh) * 2017-03-09 2019-10-16 日商捷進科技有限公司 黏晶裝置及半導體裝置的製造方法
TW201911448A (zh) * 2017-05-18 2019-03-16 日商捷進科技有限公司 半導體製造裝置及半導體裝置的製造方法
TW201941315A (zh) * 2018-03-26 2019-10-16 日商捷進科技有限公司 黏晶裝置及半導體裝置的製造方法

Also Published As

Publication number Publication date
JP7437987B2 (ja) 2024-02-26
KR102516586B1 (ko) 2023-04-03
KR20210118742A (ko) 2021-10-01
JP2021150586A (ja) 2021-09-27
CN113436986B (zh) 2024-02-20
TW202138790A (zh) 2021-10-16
CN113436986A (zh) 2021-09-24

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