CN113436986B - 芯片贴装装置及半导体器件的制造方法 - Google Patents

芯片贴装装置及半导体器件的制造方法 Download PDF

Info

Publication number
CN113436986B
CN113436986B CN202110197928.3A CN202110197928A CN113436986B CN 113436986 B CN113436986 B CN 113436986B CN 202110197928 A CN202110197928 A CN 202110197928A CN 113436986 B CN113436986 B CN 113436986B
Authority
CN
China
Prior art keywords
chip
substrate
mounting
imaging device
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110197928.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN113436986A (zh
Inventor
小桥英晴
保坂浩二
吉山仁晃
小野悠太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fasford Technology Co Ltd
Original Assignee
Fasford Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fasford Technology Co Ltd filed Critical Fasford Technology Co Ltd
Publication of CN113436986A publication Critical patent/CN113436986A/zh
Application granted granted Critical
Publication of CN113436986B publication Critical patent/CN113436986B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Die Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202110197928.3A 2020-03-23 2021-02-22 芯片贴装装置及半导体器件的制造方法 Active CN113436986B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-051130 2020-03-23
JP2020051130A JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN113436986A CN113436986A (zh) 2021-09-24
CN113436986B true CN113436986B (zh) 2024-02-20

Family

ID=77752817

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110197928.3A Active CN113436986B (zh) 2020-03-23 2021-02-22 芯片贴装装置及半导体器件的制造方法

Country Status (4)

Country Link
JP (1) JP7437987B2 (https=)
KR (1) KR102516586B1 (https=)
CN (1) CN113436986B (https=)
TW (1) TWI765517B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373686B (zh) * 2022-03-21 2022-06-14 北京芯士联半导体科技有限公司 基板的接合方法
CN120315056B (zh) * 2025-06-13 2025-08-15 北京现龙科技有限公司 基于料带圆孔引导对比度和透光检测芯片的方法及系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
CN106920762A (zh) * 2015-12-24 2017-07-04 捷进科技有限公司 半导体制造装置、半导体器件的制造方法及芯片贴装机
CN107086185A (zh) * 2016-02-16 2017-08-22 三菱电机株式会社 晶片的检查装置、晶片的检查方法以及半导体装置的制造方法
JP2019029425A (ja) * 2017-07-27 2019-02-21 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および半導体製造システム
CN109524320A (zh) * 2017-09-19 2019-03-26 捷进科技有限公司 半导体制造装置及半导体器件的制造方法
CN109564172A (zh) * 2016-07-05 2019-04-02 佳能机械株式会社 缺陷检测装置、缺陷检测方法、晶片、半导体芯片、半导体装置、裸片接合机、接合方法、半导体制造方法、以及半导体装置制造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03192800A (ja) * 1989-12-21 1991-08-22 Sharp Corp プリント基板の部品実装認識方法
JPH10209227A (ja) * 1997-01-20 1998-08-07 Sony Corp 半導体集積回路の検査システム、半導体集積回路の検査装置、および半導体集積回路の検査方法
JP3851468B2 (ja) 1999-07-09 2006-11-29 富士写真フイルム株式会社 発光部品のボンディング方法および装置
JP5525336B2 (ja) 2010-06-08 2014-06-18 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP6120094B2 (ja) * 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
KR101501129B1 (ko) * 2013-08-23 2015-03-12 주식회사 고영테크놀러지 기판 검사 장치
JP5784796B2 (ja) 2014-06-02 2015-09-24 株式会社日立製作所 表面検査装置およびその方法
US20170234837A1 (en) * 2014-10-24 2017-08-17 Renishaw Plc Acoustic apparatus and method
WO2016090311A1 (en) * 2014-12-05 2016-06-09 Kla-Tencor Corporation Apparatus, method and computer program product for defect detection in work pieces
JP6505776B2 (ja) * 2016-07-05 2019-04-24 キヤノンマシナリー株式会社 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、ダイボンダ、半導体製造方法、および半導体装置製造方法
JP6846958B2 (ja) * 2017-03-09 2021-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6975551B2 (ja) * 2017-05-18 2021-12-01 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP7102271B2 (ja) * 2018-07-17 2022-07-19 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
CN106920762A (zh) * 2015-12-24 2017-07-04 捷进科技有限公司 半导体制造装置、半导体器件的制造方法及芯片贴装机
CN107086185A (zh) * 2016-02-16 2017-08-22 三菱电机株式会社 晶片的检查装置、晶片的检查方法以及半导体装置的制造方法
CN109564172A (zh) * 2016-07-05 2019-04-02 佳能机械株式会社 缺陷检测装置、缺陷检测方法、晶片、半导体芯片、半导体装置、裸片接合机、接合方法、半导体制造方法、以及半导体装置制造方法
JP2019029425A (ja) * 2017-07-27 2019-02-21 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および半導体製造システム
CN109524320A (zh) * 2017-09-19 2019-03-26 捷进科技有限公司 半导体制造装置及半导体器件的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
热超声倒装键合机视觉系统的设计与实现;李建平;邹中升;王福亮;;中南大学学报(自然科学版)(第01期);全文 *

Also Published As

Publication number Publication date
JP7437987B2 (ja) 2024-02-26
KR102516586B1 (ko) 2023-04-03
KR20210118742A (ko) 2021-10-01
JP2021150586A (ja) 2021-09-27
TW202138790A (zh) 2021-10-16
TWI765517B (zh) 2022-05-21
CN113436986A (zh) 2021-09-24

Similar Documents

Publication Publication Date Title
KR102641333B1 (ko) 다이 본딩 장치 및 반도체 장치의 제조 방법
CN110729210B (zh) 半导体制造装置以及半导体器件的制造方法
JP7225337B2 (ja) 半導体製造装置および半導体装置の製造方法
CN109524320B (zh) 半导体制造装置及半导体器件的制造方法
CN111725086B (zh) 半导体制造装置以及半导体器件的制造方法
CN114093789B (zh) 芯片贴装装置以及半导体器件的制造方法
TWI858453B (zh) 半導體製造裝置、檢查裝置及半導體裝置的製造方法
JP2019029611A (ja) ダイボンディング装置および半導体装置の製造方法
CN113436986B (zh) 芯片贴装装置及半导体器件的制造方法
CN115410947B (zh) 芯片贴装装置及半导体器件的制造方法
JP7851125B2 (ja) 半導体製造装置、検査装置および半導体装置の製造方法
JP2023100562A (ja) 半導体製造装置、検査装置および半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant