JP7437987B2 - ダイボンディング装置および半導体装置の製造方法 - Google Patents

ダイボンディング装置および半導体装置の製造方法 Download PDF

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Publication number
JP7437987B2
JP7437987B2 JP2020051130A JP2020051130A JP7437987B2 JP 7437987 B2 JP7437987 B2 JP 7437987B2 JP 2020051130 A JP2020051130 A JP 2020051130A JP 2020051130 A JP2020051130 A JP 2020051130A JP 7437987 B2 JP7437987 B2 JP 7437987B2
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Japan
Prior art keywords
die
bonding apparatus
die bonding
substrate
imaging device
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JP2020051130A
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Japanese (ja)
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JP2021150586A (ja
JP2021150586A5 (https=
Inventor
英晴 小橋
浩二 保坂
仁晃 吉山
悠太 小野
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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Priority to JP2020051130A priority Critical patent/JP7437987B2/ja
Priority to TW110100364A priority patent/TWI765517B/zh
Priority to CN202110197928.3A priority patent/CN113436986B/zh
Priority to KR1020210030130A priority patent/KR102516586B1/ko
Publication of JP2021150586A publication Critical patent/JP2021150586A/ja
Publication of JP2021150586A5 publication Critical patent/JP2021150586A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0438—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Die Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020051130A 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法 Active JP7437987B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020051130A JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法
TW110100364A TWI765517B (zh) 2020-03-23 2021-01-06 晶粒接合裝置及半導體裝置的製造方法
CN202110197928.3A CN113436986B (zh) 2020-03-23 2021-02-22 芯片贴装装置及半导体器件的制造方法
KR1020210030130A KR102516586B1 (ko) 2020-03-23 2021-03-08 다이 본딩 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020051130A JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法

Publications (3)

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JP2021150586A JP2021150586A (ja) 2021-09-27
JP2021150586A5 JP2021150586A5 (https=) 2023-01-19
JP7437987B2 true JP7437987B2 (ja) 2024-02-26

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JP2020051130A Active JP7437987B2 (ja) 2020-03-23 2020-03-23 ダイボンディング装置および半導体装置の製造方法

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Country Link
JP (1) JP7437987B2 (https=)
KR (1) KR102516586B1 (https=)
CN (1) CN113436986B (https=)
TW (1) TWI765517B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373686B (zh) * 2022-03-21 2022-06-14 北京芯士联半导体科技有限公司 基板的接合方法
CN120315056B (zh) * 2025-06-13 2025-08-15 北京现龙科技有限公司 基于料带圆孔引导对比度和透光检测芯片的方法及系统

Citations (4)

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JP2016530521A (ja) 2013-08-23 2016-09-29 コー・ヤング・テクノロジー・インコーポレーテッド 基板検査装置
JP2018011048A (ja) 2016-07-05 2018-01-18 キヤノンマシナリー株式会社 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法
JP2019054203A (ja) 2017-09-19 2019-04-04 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP2020013841A (ja) 2018-07-17 2020-01-23 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

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JPH03192800A (ja) * 1989-12-21 1991-08-22 Sharp Corp プリント基板の部品実装認識方法
JPH10209227A (ja) * 1997-01-20 1998-08-07 Sony Corp 半導体集積回路の検査システム、半導体集積回路の検査装置、および半導体集積回路の検査方法
JP3851468B2 (ja) 1999-07-09 2006-11-29 富士写真フイルム株式会社 発光部品のボンディング方法および装置
KR100920730B1 (ko) * 2008-12-24 2009-10-07 주식회사 이큐스팜 이미징 장치용 조명장치 및 조명방법
JP5525336B2 (ja) 2010-06-08 2014-06-18 株式会社日立ハイテクノロジーズ 欠陥検査方法および欠陥検査装置
JP6120094B2 (ja) * 2013-07-05 2017-04-26 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP5784796B2 (ja) 2014-06-02 2015-09-24 株式会社日立製作所 表面検査装置およびその方法
US20170234837A1 (en) * 2014-10-24 2017-08-17 Renishaw Plc Acoustic apparatus and method
WO2016090311A1 (en) * 2014-12-05 2016-06-09 Kla-Tencor Corporation Apparatus, method and computer program product for defect detection in work pieces
JP6685126B2 (ja) * 2015-12-24 2020-04-22 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6658051B2 (ja) * 2016-02-16 2020-03-04 三菱電機株式会社 ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法
SG11201900112TA (en) * 2016-07-05 2019-02-27 Canon Machinery Inc Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method
JP6846958B2 (ja) * 2017-03-09 2021-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP6975551B2 (ja) * 2017-05-18 2021-12-01 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP7082862B2 (ja) * 2017-07-27 2022-06-09 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および半導体製造システム
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
JP2016530521A (ja) 2013-08-23 2016-09-29 コー・ヤング・テクノロジー・インコーポレーテッド 基板検査装置
JP2018011048A (ja) 2016-07-05 2018-01-18 キヤノンマシナリー株式会社 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法
JP2019054203A (ja) 2017-09-19 2019-04-04 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP2020013841A (ja) 2018-07-17 2020-01-23 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法

Also Published As

Publication number Publication date
KR102516586B1 (ko) 2023-04-03
KR20210118742A (ko) 2021-10-01
JP2021150586A (ja) 2021-09-27
CN113436986B (zh) 2024-02-20
TW202138790A (zh) 2021-10-16
TWI765517B (zh) 2022-05-21
CN113436986A (zh) 2021-09-24

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