KR102516586B1 - Die bonding apparatus and manufacturing method of semiconductor device - Google Patents

Abstract

It is to provide a technique capable of improving the recognition accuracy of cracks.
The die bonding device includes an imaging device that captures an image of the die, a lighting device that illuminates the die from an angle with respect to an optical system axis of the imaging device, and a control device that controls the imaging device and the lighting device. The control device is configured to irradiate the die with light having a shorter wavelength than green in the visible region by means of an illuminating device and image the die by means of an imaging device in order to detect cracks formed in the die.

Description

Die bonding device and manufacturing method of semiconductor device

The present disclosure relates to a die bonding apparatus, and is applicable to, for example, a die bonder that inspects a die for cracks.

Part of the manufacturing process of a semiconductor device includes a step of assembling a package by mounting a semiconductor chip (hereinafter simply referred to as a die) on a wiring board or a lead frame (hereinafter simply referred to as a board). In part, there is a process of dividing dies from a semiconductor wafer (hereinafter simply referred to as a wafer) (dicing process) and a bonding process of mounting the divided dies on a substrate. A semiconductor manufacturing device used in the bonding process is a die bonding device such as a die bonder.

In the dicing process, there are cases where cracks extending from the cut surface to the inside occur in the die due to cutting resistance or the like during dicing. Therefore, in the bonding step, surface inspection (external appearance inspection) is performed by capturing an image of the die with a camera.

Japanese Unexamined Patent Publication No. 2019-54203

Since the protective film (surface protective film) formed on the surface of the die formed of a polyimide film or the like is a layer that can transmit irradiated light from the lighting device, depending on the thickness of the surface protective film or the concave-convex pattern formed under the surface protective film, etc. In some cases, it is difficult to detect a crack formed from the upper or lower surface toward a substrate such as silicon.

An object of the present disclosure is to provide a technique capable of improving the recognition accuracy of cracks.

A brief outline of representative ones of the present disclosure is as follows.

That is, the die bonding device includes an imaging device that captures an image of the die, a lighting device that illuminates the die from an angle with respect to an optical system axis of the imaging device, and a control device that controls the imaging device and the lighting device. The control device is configured to irradiate the die with light having a shorter wavelength than green in the visible region by means of an illuminating device and image the die by means of an imaging device in order to detect cracks formed in the die.

According to the above die bonding apparatus, the recognition accuracy of cracks can be improved.

1 is a schematic top view showing a configuration example of a die bonder.
Fig. 2 is a diagram explaining a schematic configuration when viewed from the direction of arrow A in Fig. 1;
Fig. 3 is a schematic sectional view showing a main part of the die supply section in Fig. 1;
Fig. 4 is a block diagram showing a schematic configuration of a control system of the die bonder of Fig. 1;
Fig. 5 is a flowchart for explaining a die bonding process in the die bonder of Fig. 1;
6 is a schematic diagram illustrating oblique illumination.
Fig. 7 is a diagram explaining cracks and their background;
Fig. 8 is a view explaining the difference in the visible form of the pattern by the lighting color.
9 is a graph showing measurement results of coordinates in a field of view, cracks on a die surface, and background roughness;

First, the technology reviewed by the present initiators will be described using FIGS. 6 to 9 . 6 is a schematic diagram illustrating oblique light illumination. Fig. 7 is a diagram explaining cracks and their backgrounds, Fig. 7 (a) is a diagram showing an image in the case where the difference in brightness contrast of cracks with respect to the background is large, and Fig. 7 (b) is a diagram showing cracks against the background. It is a figure which shows an image in the case where the difference of brightness contrast of is small. 8 is a view explaining the difference in the visible form of the pattern by the lighting color, FIG. 8 (a) is an image when the lighting color is blue, FIG. 8 (b) is an image when the lighting color is green, 8(c) is an image when the illumination color is red. 9 is a graph showing measurement results of coordinates in the field of view, cracks on the surface of the die, and background roughness, FIG. 9 (a) is in the case of white lighting, and FIG. (c) of is the case of red illumination.

When designing a crack inspection function for images by a camera, the lighting configuration consists of a bright-field method that "brightens the background and takes a picture of what you want to see darkly" and a dark-field method that "makes the background dark and takes what you want to see brightly" there is. In general, the dark field method is better for inspecting fine scratches. Since the surface of the wafer is close to a mirror surface, oblique illumination, which is an illumination method in which light is projected from an oblique angle, is preferable for inspection by a dark field method. As shown in Fig. 6, when detecting a crack in the die D, the angle of incidence θ of the oblique light of the lighting device LD is as close as possible to the axis of the optical system of the imaging device CM (the angle of incidence θ is 0 as much as possible). ), it is easier to make cracks shine. In this specification, this illumination is referred to as high-angle crack detection illumination.

The spectral reflectance of the memory cell layer changes due to thinning of a surface protective film formed of a polyimide film or the like, multi-layering of a surface memory, or the like. For this reason, in high-angle crack detection illumination, as shown in Fig. 7(b), patterns such as stripes may appear on the memory cells of the memory array MARY on the surface of the die. When this stripe pattern appears on the background, it becomes difficult to distinguish the stripe pattern from the cracked CRK. In other words, this stripe pattern becomes an obstacle in image processing to separate crack areas from other areas, making it difficult to detect cracks with a small difference in brightness contrast with respect to the background and to accurately measure the length of cracks. The effect is great when the area of a region formed by repeating patterns is larger than the area of other regions, such as the memory array MARY.

As shown in Fig. 8, when the illumination wavelength of the oblique illumination used in this stripe pattern is longer, it becomes more conspicuous, and when it is shorter, it disappears more and becomes invisible.

In addition, when cracks on the surface of the die and background illuminance are measured, as shown in FIG. ), (B) is the brightness of the background, (C) is an area where memory cells rise and becomes brighter, and (D) is an area that is totally reflected. In the white illumination shown in (C) of FIG. 9 (a), the area where the memory cells rise and become bright does not exist in the blue illumination of FIG. 9 (b), and in FIG. 9 (c) In the illustrated red illumination, there is an area where the memory cell rises and becomes extremely bright. Therefore, it can be seen that the red component in white is the cause of the part where the background brightness becomes brighter in the white light.

The above difference due to the lighting color,

(a) Difference in the absorption spectrum of the surface protective film (blue color is more easily absorbed)

(b) Light interference of the surface protective film (red side is more likely to interfere)

(c) Difference in reflectance spectra of the shunt part (die surface) in the memory layer of the silicon surface layer (red side is more likely to be reflected)

is by

That is, in the visible light region, the longer the wavelength, the higher the reflectance of the die surface, so transmission and interference occur through the interposition of the polyimide film, thereby visualizing the cell pattern on the die surface. This is because, on the other hand, the shorter the wavelength, the smaller the characteristic, and reflects only the diffused light of the crack.

Therefore, as shown in FIG. 6 , the die bonding device BD in the embodiment includes an imaging device CM and a lighting device LD. The lighting device LD uses light of a color shorter than green in wavelength in the visible light region so that a stripe pattern does not appear on the surface. For example, a blue LED or a purple LED is used as a light source. The light source to be used may be a light source that emits blue light (for example, a blue LED) as well as a white light source through which a short-pass filter is transmitted. Here, the short-pass filter is a filter for wavelength (color) separation that can transmit light on the short wavelength side and cut light on the long wavelength side with a sharp rise. The short-pass filter as this optical filter is preferably a cyan filter that cuts red and transmits blue, for example.

Further, it is preferable that the lighting device LD is oblique lighting. Also, the oblique illumination is more preferably a high angle. The lighting device LD may be a caster ring light or a caster bar light. The angle of incidence θ is preferably greater than 0 degrees and less than or equal to 30 degrees, and more preferably greater than or equal to 5 degrees and less than or equal to 15 degrees, for example.

In this way, the contrast between the cracks and the background can be made higher. As cracks that can be captured by the camera as differences in contrast, cracks with a narrower width can be detected because it is easier to separate the softer (lower contrast) image from the background. In addition, it is possible to obtain inspection sensitivity equivalent to that of a product without a stripe pattern in the background. In this way, inspection sensitivity is improved and inspection is stabilized.

Further, in the case of determining the position of a die or a substrate or inspecting the position (hereinafter collectively referred to as position recognition), illumination of a white light source is used. In addition, a white light source (white LED, etc.) is used for illumination, and when detecting a die crack, blue light or purple light is irradiated by passing through a short pass filter, and when recognizing a position, white light is irradiated without passing through the short pass filter you can do it In addition, a light source different from that used for detecting die cracks may be provided for positioning or position inspection of the die or substrate.

Hereinafter, examples will be described using drawings. However, in the following description, the same reference numerals are given to the same components, and repetitive explanations are omitted in some cases. In addition, in order to make explanation clearer, although the width, thickness, shape, etc. of each part may be schematically expressed compared with an actual aspect, it is only an example and does not limit the interpretation of this invention. .

[Example]

1 is a top view schematically showing a die bonder according to an embodiment. Fig. 2 is a view explaining the operation of the pickup head and the bonding head when viewed from the direction of arrow A in Fig. 1;

The die bonder 10 is roughly divided into a die supply unit 1 that supplies a die D to be mounted on a substrate S, a pick-up unit 2, an intermediate stage unit 3, a bonding unit 4, and a transfer unit. (5), a substrate supply unit 6, a substrate carrying unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-back direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is disposed on the front side of the die bonder 10, and the bonding unit 4 is disposed on the inner side. Here, on the substrate S, one or a plurality of product areas (hereinafter referred to as package areas P), which will be one final package, are printed.

First, the die supply unit 1 supplies the die D to be mounted in the package area P of the substrate S. The die supply unit 1 has a wafer holder 12 for holding the wafer 11 and a lifting unit 13 indicated by a dotted line for pushing the die D up from the wafer 11 . The die supply unit 1 is moved in the XY direction by a drive unit (not shown) to move the die D to be picked up to the position of the lifting unit 13 .

The pick-up unit 2 includes a pick-up head 21 that picks up the die D, a Y drive part 23 of the pick-up head that moves the pick-up head 21 in the Y direction, and a collet 22 that lifts, rotates, and It has each driving part (not shown) which moves in a direction. The pick-up head 21 has a collet 22 (see also FIG. 2 ) that adsorbs and holds the pushed-up die D at its tip, picks up the die D from the die supply unit 1, and transfers it to the intermediate stage 31. Load up. The pick-up head 21 has drive units (not shown) that lift, rotate, and move the collet 22 in the X direction.

The intermediate stage unit 3 has an intermediate stage 31 for temporarily loading the die D, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31 .

The bonding section 4 picks up the die D from the intermediate stage 31 and bonds it onto the package area P of the substrate S being transported or stacks it on the die already bonded onto the package area P of the substrate S. bonding in the form The bonding unit 4 includes a bonding head 41 provided with a collet 42 (see also FIG. 2 ) for adsorbing and holding the die D at its tip, similarly to the pickup head 21, and the bonding head 41 is Y. It has a Y drive unit 43 that moves in the direction, and a substrate recognition camera 44 that recognizes the bonding position by capturing an image of a position recognition mark (not shown) of the package area P of the substrate S. With this configuration, the bonding head 41 corrects the pick-up position and posture based on the imaging data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and Bond the die D to the substrate based on the imaging data of ).

The conveyance section 5 has substrate conveyance claws 51 for holding and conveying the substrate S, and conveyance lanes 52 for moving the substrate S. The substrate S is moved by driving a nut (not shown) of a substrate carrying claw 51 provided in the transfer lane 52 with a ball screw (not shown) provided along the transfer lane 52 . With this configuration, the substrate S is moved from the substrate supply unit 6 to the bonding position along the transfer lane 52, and after bonding, moves to the substrate carrying unit 7, and the substrate S is transported to the substrate carrying unit 7. hand over S.

The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10 and a central processing unit (CPU) for executing the program stored in the memory.

Next, the configuration of the die supply unit 1 will be described using FIG. 3 . Fig. 3 is a schematic sectional view showing a main part of the die supply section in Fig. 1;

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction) and a lifting unit 13 that moves in the vertical direction. The wafer holding table 12 includes an expander ring 15 holding the wafer ring 14 and a dicing tape 16 held by the wafer ring 14 and to which a plurality of dies D are bonded horizontally. It has a support ring 17 for positioning. The lifting unit 13 is disposed inside the support ring 17 .

The die supply unit 1 lowers the expand ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is extended, the gap between the dies D is increased, and the die D is pushed up from below the die D by the lifting unit 13, The pick-up of the is improved. In addition, as the thickness is reduced, the adhesive for bonding the die to the substrate changes from liquid to film, and film-like adhesion between the wafer 11 and the dicing tape 16 is called a die attach film (DAF) 18. The material is pasted. In the wafer 11 having the die attach film 18 , dicing is performed on the wafer 11 and the die attach film 18 . Therefore, in the separation process, the wafer 11 and the die attach film 18 are separated from the dicing tape 16 . In the following description, the existence of the die attach film 18 is ignored.

The die bonder 10 includes a wafer recognition camera 24 for recognizing the posture of the die D on the wafer 11 and a stage recognition camera 32 for recognizing the posture of the die D loaded on the intermediate stage 31; It has a board recognition camera 44 that recognizes the mounting position on the bonding stage BS. What must be corrected for the posture misalignment between the recognition cameras is the stage recognition camera 32 involved in pickup by the bonding head 41 and the board recognition camera 44 involved in bonding to the mounting position by the bonding head 41. )am. In this embodiment, cracks in the die D are detected using the illumination device described in the embodiment together with the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44.

The control unit 8 is described using FIG. 4 . 4 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 is roughly divided into a control/arithmetic unit 81 mainly composed of a CPU (Central Processor Unit), a storage unit 82, an input/output unit 83, a bus line 84, and a power supply unit. (85). The storage device 82 includes a main storage device 82a composed of RAM storing processing programs and the like, and an auxiliary storage device 82b composed of a HDD storing control data and image data necessary for control. have The input/output device 83 includes a monitor 83a for displaying device status and information, a touch panel 83b for inputting operator instructions, a mouse 83c for operating the monitor, and an optical system 88. It has an image introduction device 83d that introduces image data. In addition, the input/output device 83 includes a motor control device 83e that controls a drive unit 86 such as an XY table (not shown) of the die supply unit 1 or a ZY drive shaft of a bonding head table, and various sensor signals and It has an I/O signal control device 83f that introduces or controls a signal from a signal section 87 such as a switch or the like of a lighting device or the like. The optical system 88 includes a wafer recognition camera 24 , a stage recognition camera 32 , and a substrate recognition camera 44 . The control/arithmetic unit 81 takes in necessary data via the bus line 84, calculates it, and sends information to the control of the pickup head 21 or the like or to the monitor 83a or the like.

The controller 8 stores image data captured by the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 via the image introduction device 83d in the storage device 82. The positioning of the package area P of the die D and the substrate S and the surface inspection of the die D and the substrate S are performed using the control/arithmetic unit 81 by software programmed based on the stored image data. Based on the positions of the die D and the package area P of the substrate S calculated by the control/arithmetic unit 81, the drive unit 86 is moved via the motor control unit 83e by software. By this process, the positioning of the die on the wafer is performed, and the die D is bonded onto the package area P of the substrate S by operating the pickup unit 2 and the drive unit of the bonding unit 4. The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 used are gray scale, color, etc., and quantify light intensity.

FIG. 5 is a flowchart for explaining a die bonding process in the die bonder of FIG. 1 .

In the die bonding process of the embodiment, first, the controller 8 takes out the wafer ring 14 holding the wafer 11 from the wafer cassette and places it on the wafer holder 12, and then the wafer holder 12 ) is conveyed to the reference position where die D is picked up (wafer loading (step P1)). Next, the control unit 8 performs fine adjustment from the image acquired by the wafer recognition camera 24 so that the arrangement position of the wafer 11 exactly coincides with the reference position.

Next, the control unit 8 pitch-moves the wafer holder 12 on which the wafer 11 is mounted at a predetermined pitch and holds it horizontally, thereby arranging the die D to be picked up first at the pick-up position (die transfer). (Process P2)). The wafer 11 is previously inspected for each die by an inspection device such as a prober, and map data indicating good or bad for each die is generated and stored in the storage device 82 of the control unit 8 . Determination of whether the die D to be picked up is a good product or a defective product is performed based on the map data. When the die D is a defective product, the control unit 8 pitch-moves the wafer holder 12 on which the wafer 11 is placed, at a predetermined pitch, places the die D to be picked up next to the pick-up position, and removes the defective product. Skip die D.

The control unit 8 photographs the principal surface (upper surface) of the die D to be picked up by the wafer recognition camera 24, and calculates the amount of displacement of the die D to be picked up from the pick-up position from the acquired image. The control unit 8 moves the wafer holder 12 on which the wafer 11 is placed based on the amount of displacement, and accurately places the die D to be picked up at the pick-up position (die positioning (step P3)). ).

Next, the control unit 8 inspects the surface of the die D from the image acquired by the wafer recognition camera 24 (step P4). Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and when it is determined that there is no problem with the surface of the die D, the control unit 8 proceeds to the next step (step P9 to be described later). , The surface image is visually confirmed, or a more highly sensitive inspection or an inspection with different lighting conditions is performed. If there is a problem, skip processing is performed, and if there is no problem, processing in the next step is performed. In the skip processing, steps P9 and after of the die D are skipped, the wafer holder 12 on which the wafer 11 is mounted is pitch-moved at a predetermined pitch, and the die D to be picked up next is placed at the pick-up position.

The control unit 8 loads the substrate S transport lane 52 from the substrate supply unit 6 (substrate loading (step P5)). The control unit 8 moves the substrate transport claw 51 that grips and transports the substrate S to the bonding position (substrate transport (step P6)). The substrate is imaged by the substrate recognition camera 44 to position the substrate (substrate positioning (step P7)).

Next, the control unit 8 inspects the surface of the package area P of the substrate S from the image acquired by the substrate recognition camera 44 (step P8). Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and when it is determined that the surface of the package area P of the substrate S has no problem, it proceeds to the next step (step P9 described later), but it is determined that there is a problem. In the case of determination, the surface image is visually confirmed, or a more highly sensitive inspection or inspection with different lighting conditions is performed. Skip processing is performed when there is a problem, and processing in the next step is performed when there is no problem. In the skip processing, steps P10 and after of the corresponding tab of the package area P of the substrate S are skipped, and defects are registered in the substrate start-up information.

The control unit 8 accurately arranges the die D to be picked up at the pick-up position by the die supply unit 1, and then the die D is placed in the dicing tape 16 by the pick-up head 21 including the collet 22. is picked up (die handling (step P9)) and loaded onto the intermediate stage 31 (step P10). The controller 8 detects a posture misalignment (rotational misalignment) of the dies loaded on the intermediate stage 31 by capturing an image with the stage recognition camera 32 (step P11). When there is a posture shift, the control unit 8 rotates the intermediate stage 31 in a plane parallel to the mounting surface having the mounting position by means of a swing drive device (not shown) provided on the intermediate stage 31 to correct the posture shift. correct the

The control unit 8 inspects the surface of the die D from the image acquired by the stage recognition camera 32 (step P12). Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and when it is determined that there is no problem with the surface of the die D, the control unit 8 proceeds to the next step (step P13 to be described later). , The surface image is visually confirmed, or a more highly sensitive inspection or an inspection with different lighting conditions is performed, and if there is a problem, the die is loaded on a defective product tray (not shown) for skip processing, and when there is no problem , the processing of the following process is performed. In the skip processing, steps P13 and later of the die D are skipped, the wafer holding table 12 on which the wafer 11 is mounted is pitch-moved at a predetermined pitch, and the die D to be picked up next is placed at the pick-up position.

The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the collet 42, and the die D is bonded to the package area P of the substrate S or to the package area P of the substrate S. The die is bonded to the die (die attach (step P13)).

After bonding the die D, the controller 8 inspects whether the bonding position is correct (inspection of the relative position of the die and the substrate (step P14)). At this time, similar to position alignment of dies described later, the center of the die and the center of the tap are obtained, and whether the relative positions are correct is checked.

Next, the control unit 8 inspects the surfaces of the die D and the substrate S from the images acquired by the substrate recognition camera 44 (step P15). Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and when it is determined that there is no problem with the surface of the bonded die D, the control unit 8 proceeds to the next step (step P9 to be described later). In this case, the surface image is visually confirmed, or a more highly sensitive inspection or inspection with different lighting conditions is performed. Skip processing is performed when there is a problem, and processing in the next step is performed when there is no problem. In the skip processing, defects are registered in substrate start information.

Thereafter, dies D are bonded to the package area P of the substrate S one by one according to the same procedure. When the bonding of one substrate is completed, the substrate S is moved to the substrate delivery unit 7 by the substrate transport claw 51 (substrate transport (step P16)), and the substrate S is passed to the substrate delivery unit 7 ( Substrate unloading (process P17)).

Thereafter, dies D are peeled from the dicing tape 16 one by one according to the same procedure (step P9). When picking up of all dies D except for defective products is completed, the dicing tape 16 and the wafer ring 14 holding the dies D in the outer shape of the wafer 11 are unloaded from the wafer cassette (step P18). .

The crack appearance inspection is performed at at least one of the die supply section, the intermediate stage, and the bonding stage, which are places where die position recognition is performed, but it is more preferable to perform the crack inspection at all locations. Cracks can be quickly detected by performing this in the die supply section. If performed at the intermediate stage, cracks that could not be detected in the die supply section or cracks that occurred after the pick-up process (crack that did not materialize prior to the bonding process) can be detected before bonding. In addition, when performed in the bonding stage, cracks that could not be detected in the die supply section and the intermediate stage (crackes that did not materialize prior to the bonding process) or cracks generated after the bonding process are removed before bonding for stacking the next die or before substrate discharge. can be detected.

In the above, the invention made by the present inventors has been specifically described based on the embodiments and examples, but the present disclosure is not limited to the above embodiments and examples, and various changes are possible.

For example, although the external appearance inspection recognition is performed after the die position recognition in the embodiment, the die location recognition may be performed after the die external inspection recognition.

Further, in the embodiment, the DAF is affixed to the back surface of the wafer, but the DAF may not be present.

In addition, although each pick-up head and bonding head are provided in the Example, two or more may be sufficient respectively. Further, although an intermediate stage is provided in the embodiment, the intermediate stage may not be present. In this case, the pickup head and bonding head may be used together.

Further, in the embodiment, bonding is performed with the surface of the die facing up, but after the die is picked up, the front and back surfaces of the die may be reversed and bonding may be performed with the rear surface of the die facing up. In this case, it is not necessary to provide an intermediate stage. This device is called a flip chip bonder.

Further, although a bonding head is provided in the embodiment, the bonding head may not be present. In this case, the picked-up die is loaded into a container or the like. This device is called a pick-up device.

BD: die bonding device
CM: imaging device
CNT: control unit
D: die
LD: lighting device

Claims (15)

an imaging device for imaging the die;
an illumination device for illuminating the die from an oblique angle with respect to an optical system axis of the imaging device;
a control device for controlling the imaging device and the lighting device;
The lighting device is configured to transmit blue light to the die by passing light from a white light source through a short pass filter,
The control device,
When detecting a crack formed in the die, the die is irradiated with blue light by the lighting device and the die is imaged by the imaging device,
The die bonding device configured to, when recognizing the position of the die, irradiate white light from the white light source without passing the short-pass filter, and image the die with the imaging device. delete delete delete delete According to claim 1,
Further comprising a die supply unit having a wafer ring holder for holding the dicing tape to which the die is attached,
The die bonding device, wherein the control device is configured to image a die attached to the dicing tape using the imaging device and the lighting device. According to claim 1,
Further comprising a bonding head for bonding the die onto a substrate or a previously bonded die;
wherein the control device is configured to image a die bonded on the substrate or die using the imaging device and the lighting device. According to claim 1,
a pick-up head for picking up the die;
Further comprising an intermediate stage on which the picked up dies are loaded,
wherein the control device is configured to image a die loaded on the intermediate stage using the imaging device and the lighting device. According to claim 1,
The die bonding device of claim 1 , wherein an area of the die having a repeating pattern is larger than an area of a non-repeating pattern. According to claim 1,
The die bonding device wherein the die is a semiconductor memory device. (a) carrying in a wafer ring holder for holding the dicing tape on which the die is attached to the die bonding device of claim 1;
(b) a step of carrying in a substrate;
(c) picking up the die;
(d) A method of manufacturing a semiconductor device including a step of bonding the picked-up die onto the substrate or onto a die already bonded to the substrate. According to claim 11,
In step (c), the picked-up die is loaded on an intermediate stage,
In the process (d), the die loaded on the intermediate stage is picked up. According to claim 11,
(e) The semiconductor device manufacturing method further comprising a step of inspecting an external appearance of the die using the imaging device and the lighting device before the step (c). According to claim 11,
(f) After the step (d), the semiconductor device manufacturing method further includes a step of inspecting an external appearance of the die using the imaging device and the lighting device. According to claim 12,
(g) After the step (c) and before the step (d), the semiconductor device manufacturing method further includes a step of inspecting an external appearance of the die using the imaging device and the lighting device.

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