JP2018011048A - Defect detector, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a defect detector and a defect detection method, capable of stably detecting the presence or absence of defects such as cracks, and also to provide a die bonder and a bonding method.SOLUTION: Defects are detected which are formed in a coating layer in a work piece equipped with a variable density layer having a variable density pattern, and a coating layer covering the variable density pattern of the variable density layer. Illumination light irradiated from an illuminator has a wavelength whose strength of light made incident on an imaging device by being reflected or scattered from the coating layer is larger than that of the light made incident on the imaging device by being reflected from at least the variable density layer. For this reason, this illumination light reduces influence on the variable density pattern of the variable density layer.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a defect detection device, a defect detection method, a die bonder, a bonding method, a wafer, a semiconductor, and a defect detection device for detecting a crack formed on a workpiece such as a wafer, a chip cut from the wafer and separated into pieces. The present invention relates to a chip, a semiconductor manufacturing method, and a semiconductor device manufacturing method.

  Conventionally, various detection devices for detecting cracks generated in a chip (semiconductor chip) have been proposed (Patent Documents 1 to 3). In Patent Document 1, an image of a semiconductor surface is picked up by an image pickup means, a correlation coefficient of a plurality of color signals output from the image pickup means is obtained by a detection means, and a defect on the semiconductor surface is detected from these correlation coefficients. It is. For this reason, defects such as discoloration and dirt can be detected.

  In Patent Document 2, from the back surface side of the wafer on which the resin layer for sealing the main surface side is formed, the optical axis is intersected with the main surface of the wafer and irradiated with infrared rays, and the reflected light is received. By detecting an image, a crack generated in the wafer is detected. That is, by irradiating infrared rays from the back side of the wafer separated by dicing, the infrared rays can be transmitted to the wafer, and the reflected infrared rays diffusely reflected at the interface of the cracks generated inside the wafer. By forming an image while receiving light, a crack generated inside the wafer can be visualized.

  In patent document 3, the deformation | transformation of a semiconductor chip and generation | occurrence | production of a crack are detected by detecting the elastic wave from a semiconductor chip.

JP-A-6-82377 JP 2008-45965 A JP2015-170746 A

  By the way, as shown in FIG. 13, the work may be a semiconductor chip 3 having a wiring pattern layer 1 and a coating layer 2 on the wiring pattern layer. In such a case, when the illumination light is incident on the surface of the workpiece, the illumination light is reflected by the surface of the coating layer 2, passes through the coating layer 2, is absorbed by the coating layer 2, and It is scattered and reflected from the wiring pattern layer 1.

  For this reason, it was difficult to detect cracks such as cracks formed on the upper surface of the coating layer 2 with the detection device described in Patent Document 1 and the like. Further, in the method described in Patent Document 2, by irradiating infrared rays from the back side of the wafer, the infrared rays can be transmitted through the wafer, and a crack generated inside the wafer can be visualized. And cracks on the surface of the wafer cannot be detected. In Patent Document 3, an elastic wave from a semiconductor chip is detected to detect whether or not a crack has occurred. For this reason, the position of the crack cannot be detected.

  In view of the above problems, the present invention is capable of stably detecting the presence or absence of defects such as cracks formed on a workpiece by reducing the influence of the shading pattern of the shading layer on the observation image of the imaging device. A detection device and a detection method are provided. In addition, a die bonder and a bonding method capable of stably detecting the presence or absence of defects such as cracks are provided.

The defect detection apparatus of the present invention is a defect detection that detects defects formed in a coating layer in a workpiece having a gray layer having a gray pattern derived from a semiconductor manufacturing process and a coating layer covering the gray pattern of the gray layer. The apparatus includes an observation mechanism including an illuminator that illuminates the workpiece and an imaging device that observes an observation site of the workpiece illuminated by the illuminator, and is irradiated from the illuminator. The illumination light has a wavelength at which the intensity of light reflected or scattered from the coating layer and incident on the imaging device is greater than light reflected from at least the gray layer and incident on the imaging device. Light with a low impact. Here, the shading pattern derived from the semiconductor manufacturing process is formed by the semiconductor manufacturing process, and is generated, for example, by having a pattern generated by a wiring pattern, oxidized or nitrided Si, and Si different from these Si. There are patterns. Further, reducing the influence of the light and shade pattern means a case where these light and shade patterns at the time of observing the defect are erased or thinly reflected and the observation of the defect is not impaired. In other words, the light used in the present defect detection apparatus has a lower luminance contrast caused by the shading pattern than when light other than this light is used.

  According to the defect detection device of the present invention, the illumination light emitted from the illuminator is reflected or scattered from the coating layer and incident on the imaging device, rather than at least the light reflected from the shading layer and incident on the imaging device. Since the wavelength of the light is high, the light reflected or scattered from the coating layer can be projected, the luminance contrast caused by the light and shade pattern is lowered, and the influence of the light and shade pattern can be reduced (small).

  The coating layer is an organic layer, and the organic layer can be set to be a polyimide resin. The coating layer can be set to have a thickness of 1 μm to 100 μm. The coating layer may be composed of a single layer or may be composed of two or more layers. When the coating layer is composed of a plurality of layers, each layer may be the same material, each layer may be a different material, or a plurality of predetermined layers may be the same material.

  The observed wavelength of the illumination light of the illuminator is preferably 450 nm or less or 1000 nm or more. Thus, if the observed wavelength is 450 nm or less or 1000 nm or more, the coating layer is made of polyimide resin, and the shading layer having the shading pattern can stably lower the influence of the wiring pattern. it can.

  The imaging apparatus performs dark field observation of observing the observation site of the workpiece illuminated by the illuminator from above, and the defect of the workpiece has at least one of an opening and an inclined surface portion. Observation of increasing the defect on the observation image of the defect formed on the workpiece can be performed.

  By setting in this way, it is possible to reduce the influence of the shading pattern and observe the defect formed on the workpiece in a larger size, or to make the defect not visible with the existing apparatus visible.

In the dark field observation, even if a plurality of illuminators are arranged at a predetermined pitch along the circumferential direction, a plurality of light emission elements arranged in at least one row in a ring shape surrounding the imaging axis of the imaging device The ring illumination which consists of a part may be sufficient. As described above, if ring illumination is used, it is possible to enlarge and observe the defect (crack) regardless of the direction (rotation angle) of the inclined surface portion of the defect.

  The illumination direction of the illuminator can be set so that the angle formed between the workpiece and the illumination axis is 50 ° to 85 ° when the imaging axis and the workpiece are arranged so as to be orthogonal to each other. As described above, by setting the angle to 50 ° to 85 °, it is possible to observe in an enlarged manner corresponding to most of the defects (cracks) generated.

The workpiece may be a wafer whose wiring pattern constitutes the shading pattern, or an individual piece (semiconductor chip) obtained by dividing the wafer. That is, as a workpiece, an individual piece mounted on a lead frame or a substrate (not packaged, that is, an individual piece not covered), or composed of a plurality of individual pieces (single piece For example, a stacked memory chip or SiP (System in Package) may be used.

  The defect detection method of the present invention is a defect detection method for detecting defects formed in a coating layer in a workpiece comprising a gray layer having a gray pattern and a coating layer covering the gray pattern of the gray layer, Irradiating the work with illumination light having a wavelength that is greater than the intensity of the light reflected or scattered from the coating layer and incident on the imaging device than the light reflected from the gray layer and incident on the imaging device, It is possible to observe the workpiece while reducing the influence of the shading pattern of the shading layer with the imaging device. That is, with the light used in this detection method, the brightness contrast generated by the shading pattern is lower than when light other than this light is used, and the work can be observed with a lower influence.

  According to the defect detection method of the present invention, the illumination light has a wavelength at which the intensity of the light that is reflected or scattered from the coating layer and incident on the imaging device is greater than the light that is reflected from at least the gray layer and incident on the imaging device. Therefore, the light reflected or scattered from the coating layer can be projected, and the influence of the shading pattern can be reduced (small).

  As the defect detection method, the defect detection apparatus may be used. A criterion for determining whether or not the defect detected by the defect detection method is defective as a product may be set in advance, and the defect image may be determined based on the criterion for determining whether the defect is defective or non-defective.

  Further, it is possible to provide a wafer or a semiconductor chip in which no defect is detected by the defect detection method or the detected defect is determined to be a non-defective product by the defect detection method.

  As the semiconductor device, a defect may not be detected by the defect detection method, or the detected defect may be configured as a single piece that is determined to be a non-defective product by the defect detection method.

  The die bonder of the present invention is a die bonder for picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position. The defect detection device is arranged at a position.

  According to the die bonder of the present invention, it is possible to detect defects such as cracks in the workpiece to be bonded at any position from the pickup position to the bonding position. That is, it is possible to detect a defect (crack) of a workpiece (semiconductor chip or the like) during a bonding operation or the like, and prevent shipment of a defective product. In the case of a product in which semiconductor chips (die) are stacked, the yield can be greatly improved. For example, if a chip is bonded on a defective chip, or a defective chip is stacked on a non-defective chip, the stacked body becomes defective or the product rank is lowered.

  In the die bonder, positioning detection at the pickup position can be performed, and positioning detection at the bonding position can be performed.

  As a die bonder, it has an intermediate stage in which a work is conveyed between a pick-up position and a bonding position, and the defect detection device according to any one of claims 1 to 13 is arranged also in this intermediate stage. Further, it may be possible to detect positioning at at least one of a pickup position, a bonding position, and an intermediate stage between the pickup position and the bonding position.

  A first bonding method of the present invention is a bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position. The defect detection device detects a defect with respect to the workpiece at least one of before and after the pickup.

  A second bonding method of the present invention is a bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position. , Having an intermediate stage between the pick-up position and the bonding position, and at least one of before the workpiece is supplied to the intermediate stage and after the workpiece is discharged from the intermediate stage, the defect detection device detects defects on the workpiece. It is to detect.

  A third bonding method of the present invention is a bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position. The defect detection apparatus detects a defect with respect to the workpiece at least one of before bonding and after bonding.

  A fourth bonding method of the present invention is a bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position. The inspection process using the defect detection method described above is performed at least one of before supplying the work to the bonding process and after discharging the work from the bonding process.

  The semiconductor manufacturing method includes an inspection process using the defect detection method, and further includes a dicing process for cutting the wafer into individual pieces, and a mold sealing process for sealing the semiconductor chips formed into individual pieces with a resin. It comprises at least one of the steps.

  A semiconductor device manufacturing method is a semiconductor device manufacturing method for manufacturing a semiconductor device having an individual body assembly made up of a plurality of individual bodies, and is an assembly of one individual body or a predetermined number of individual bodies. And at least one of another object to be assembled to the object is inspected by using the depression detection method.

  In the present invention, the light reflected or scattered from the coating layer can be projected, and the influence of the light and shade pattern can be reduced (smaller) (because the brightness contrast caused by the light and shade pattern is lowered), so that it is stable. Defects (cracks) can be detected. In addition, a defect (crack) can be detected only by setting illumination light, and an existing detection device can be used as the device, thereby reducing the cost.

1 is a simplified diagram of a defect detection apparatus according to the present invention. It is a simplified diagram showing the relationship between a work and an illuminator. It is a simplification figure of the ring illumination used for the defect detection apparatus which concerns on this invention. It is the schematic which shows the bonding process using the die bonder of this invention. It is a simplified perspective view which shows a wafer. (A) is the principal part expanded sectional view of the workpiece | work whose coating layer is a single layer, (b) is the principal part expanded sectional view of the workpiece | work with two coating layers, (c) is a workpiece | work. It is a principal part expanded sectional view of the workpiece | work whose coating layer is 3 layers. It is explanatory drawing of the transmittance | permeability of light. The defect (crack) which arises in a workpiece | work is shown, (a) is a simplified sectional view of the state by which the workpiece | work was cut | disconnected, (b) is a simplified sectional view of the state by which the inclined surface part was formed in the upper surface of a pair of cut end surface (C) is a simplified cross-sectional view in a state in which an inclined surface portion is formed on the upper surface of one of the cut end faces, (d) is a simplified cross-sectional view in a state of having a V-shaped cross section, (e) (F) is a simplified cross-sectional view in a state where a workpiece is cut in a valley shape and an inclined surface portion is formed on the upper surfaces of a pair of cut end faces; (G) is a simplified cross-sectional view of a state in which a workpiece is cut in a mountain fold shape and an inclined surface portion is formed on the upper surface of one cut end surface, and (h) is a simplified state in which the workpiece is bent in a valley fold shape. It is a sectional view, and (i) is a simplified section with the workpiece bent in a mountain fold shape. It is. The relationship between the inclination angle of the defective inclined surface portion, the rotation angle of the defective inclined surface portion, and the illumination angle of the illuminator is shown, (a) is a simplified perspective view in a state where the rotation angle of the inclined surface portion is 0 °, (b ) Is a simplified perspective view in a state where the rotation angle of the inclined surface portion is 20 °. It is a graph which shows the relationship between the rotation angle of the inclined surface part of a defect, and an apparent inclination angle. It is a graph which shows the relationship between the brightness | luminance in a bright field, and pixel size. It is a graph which shows the relationship between the brightness | luminance in a dark field, and pixel size. It is a simplified cross-sectional view of a state in which illumination light is irradiated to a semiconductor chip that is a workpiece

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  FIG. 1 shows a simplified diagram of a workpiece defect detection apparatus according to the present invention. This defect detection apparatus includes a semiconductor wafer 29 (see FIG. 5) and a semiconductor chip 21 obtained by dividing the semiconductor wafer 29 (see FIG. 4). The presence or absence and position of a defect 40 (see FIG. 8) such as a crack formed on a workpiece such as a die is detected.

  As shown in FIGS. 6A, 6 </ b> B, and 6 </ b> C, the work includes a light / dark layer 11 that is a light / dark pattern and a covering layer 12 that covers the light / dark pattern of the light / dark layer 11. In this case, the coating layer 12 is composed of a single layer in FIG. 6A, and is composed of a plurality of layers in FIGS. 6B and 6C. That is, in FIG. 6 (b), it consists of two layers of the first layer 13 (13a) on the dark and light layer side and the second layer 13 (13b) on the upper layer of the first layer 13 (13a). ) Comprises a first layer 13 (13a) on the dark and light layer side, a second layer 13 (13b) thereon, and a third layer 13 (13c) thereon. In addition, it can comprise with a wiring pattern as a light / dark pattern, and when comprised with a wiring pattern, the light / dark layer 11 can be called a wiring pattern layer. Further, the coating layer 12 may be four or more layers, exceeding three layers.

  In the present invention, the shading pattern is derived from the semiconductor manufacturing process and is formed by the semiconductor manufacturing process. For example, the pattern generated by the wiring pattern, oxidized or nitrided Si, and Si different from these Si There is a pattern or the like generated by having As described above, the shade pattern of the work may be formed by a semiconductor manufacturing process, and the base material thereof may be a semiconductor, glass, or a polymer material. Note that, as a pre-process for manufacturing a semiconductor, there are lithography (including ion implantation and etching), a film forming process, and the like.

  The coating layer 12 can be made of, for example, a silicone resin or a polyimide resin. In addition, as shown in FIGS. 6B and 6C, when a plurality of layers are provided, each layer may be made of the same material or different materials. That is, as shown in FIG. 6 (a), if the coating layer 12 is one layer, the material can be composed of a silicone resin, a polyimide resin, or the like. As shown in FIG. For example, the first layer 13a may be a polyimide resin, the second layer 13b may be a silicone resin, the first layer 13a may be a silicone resin, and the second layer 13b may be a polyimide resin. The layer 13a and the second layer 13b can be made of polyimide resin, and the first layer 13a and the second layer 13b can be made of silicone resin. As shown in FIG. 6C, when there are three or more layers, all the layers are made of the same material of silicone resin or polyimide resin, all the layers are made of different materials, or any plural layers are made of the same material. The other layers can be made of different materials. Moreover, even if it is a case where the same kind of resin is used for each layer 13, you may use the thing from which a characteristic etc. differ.

  The thickness dimension of the coating layer 12 may be, for example, a single layer shown in FIG. 6A or a plurality of layers as shown in FIGS. 6B and 6C, for example, 1 μm to 100 μm. More preferably, it can be set to about 1 μm to 20 μm.

  The defect detection apparatus is disposed in a die bonder as shown in FIGS. In the die bonder, a chip 21 cut out from a wafer 29 (see FIG. 5) is pipped up at a pickup position P and transferred (mounted) to a bonding position Q of a substrate 22 such as a lead frame. As shown in FIG. 1, the wafer 29 is divided (divided) into a large number of chips 21 by a dicing process. For this reason, the chips 21 are arranged in a matrix as shown in FIG.

  As shown in FIG. 4, the die bonder includes a collet (adsorption collet) 23. The collet 23 is moved by an unillustrated moving mechanism in the direction of arrow A and lowered in the direction of arrow B on the pickup position P, and in the direction of arrow C and lowered in the direction of arrow D on the bonding position Q. The reciprocation between the pickup position P and the bonding position Q in the directions of arrows E and F is possible. In the moving mechanism, the movement of the arrows A, B, C, D, E, and F is controlled by a control unit configured by, for example, a microcomputer. In addition, as a moving mechanism, it can comprise with various mechanisms, such as a cylinder mechanism, a ball screw mechanism, and a linear motor mechanism.

  The suction collet 23 includes a head (suction nozzle) 24 having a suction hole 28 opened on the lower surface thereof, and the chip 21 is vacuum-sucked through the suction hole 28, and the chip 21 is placed on the lower end surface (tip surface) of the head 24. Adsorbs. When this vacuum suction (evacuation) is released, the chip 21 is detached from the head 24.

  Further, the wafer 29 divided (divided) into a large number of chips 21 is disposed on, for example, an XYθ table 25 (see FIG. 5), and the XYθ table 25 is provided with push-up means having push-up pins. That is, the chip 21 to be picked up is pushed up from below by the pushing-up means, and is easily peeled off from the adhesive sheet. In this state, the chip 21 is adsorbed to the adsorbing collet 23 that has been lowered.

  That is, after the collet is positioned above the chip 21 to be picked up, the collet 23 is lowered as shown by an arrow B to pick up the chip 21. Thereafter, the collet 23 is raised as shown by the arrow A.

  Next, the collet is moved in the direction of arrow E to be positioned above the island portion, and then the collet is moved downward as indicated by arrow D to supply the chip 21 to the island portion. After supplying the chip to the island portion, the collet is raised as indicated by arrow C and then returned to the standby position above the pip-up position as indicated by arrow F.

  That is, the collet 23 is sequentially moved as indicated by arrows A, E, D, C, F, and B, whereby the chip 21 is picked up by the collet 23 at the pickup position, and the chip 21 is moved to the chip 21 at the bonding position. Will be implemented.

  By the way, it is necessary to confirm the position of the chip to be picked up (position detection) at the pick-up position and to confirm the position (position detection) of the island of the lead frame to be bonded at the bonding position. For this reason, generally, a chip to be picked up is observed with a confirmation camera disposed above the pickup position, the collet 23 is positioned above the chip to be picked up, and the position above the bonding position is The island of the lead frame is observed with the confirmation camera arranged in the above, and the collet 23 is positioned above the island.

  For this reason, in this die bonder, a positioning device as shown in FIG. 1 is arranged at the pickup position. This positioning device includes the defect detection device according to the present invention. The positioning device includes an illumination mechanism 30. The illumination mechanism 30 includes an imaging device 32 for observing the chip 21 and illumination means 33 for illuminating the chip 21. The imaging device 32 and the illumination unit 33 are controlled by the control unit 34. The imaging device 32 has a camera and a lens. The camera in this case can be composed of a CCD, a CMOS image sensor, or the like. In other words, any device that can image light having an illumination wavelength may be used. For this reason, you may use what has a sensitivity in visible light, ultraviolet, and infrared. Further, the lens can be constituted by a telecentric lens, a non-telecentric lens, or the like.

  As shown in FIG. 1, the illumination unit 33 includes a bright field illuminator 35 and a dark field illuminator 36. Bright field illumination refers to illuminating a light beam that illuminates a measurement object vertically along the center of the optical axis. Dark field illumination refers to irradiating a light beam illuminating a measurement object from an oblique direction, not the center of the optical axis. That is, the bright field generally observes direct light, and the illumination method in that case is called a direct light illumination method. According to this embodiment, a normal part of the workpiece surface (for example, a semiconductor chip surface: chip surface) is observed brightly and a defective part is observed darkly. The dark field is for observing scattered light, and the illumination method in this case is called scattered light illumination method. In the present embodiment, the normal part on the chip surface is observed dark and the defective part is observed brightly. However, since the reflected light (direct light) at the crack opening is observed in the present embodiment, the definition is different from the strict dark field definition. The correct expression is the dark field observation configuration. Therefore, the method of mainly observing the direct light reflected by the most part (normal part) of the chip surface is a bright field, the direct light reflected by the most part (normal part) of the chip surface is not observed, and the defective part ( An object that observes light scattered or reflected at an abnormal part) is a dark field. For this reason, in the dark field illumination, it is possible to observe defects such as fine structures and scratches that were not blurred in the bright field illumination.

  That is, in the present invention, bright field illumination is a type of illumination that observes direct light reflected or transmitted by the illuminated light, and is intended to observe a change in brightness against the background. Observe the bright background and dark parts of the workpiece. On the other hand, dark field illumination is a type of illumination that observes scattered or reflected light, and is intended to observe changes in brightness against the background. A dark background portion and a bright portion of a sample (work). Is to observe the situation.

  As shown in FIG. 2, the dark field illuminator 36 includes a light emitting unit 38 that emits parallel light, and at least one light emitting unit 38 may be provided. A plurality of predetermined pitches (equal pitch or indefinite pitch) may be provided. As described above, in this embodiment, the parallel light (the light beam parallel to the optical axis) is described as being used. However, the illumination light is not limited to the parallel light, but is substantially parallel in a range that can be referred to as the parallel light. Even if it is light, the radiation angle which is a range which cannot be called as parallel light may be about 30 degrees.

  Incidentally, the workpiece defect 40 has, for example, various shapes as shown in FIG. In FIG. 8A, the coating layer 12 of the workpiece is cut, and in FIG. 8B, inclined surface portions S, S are formed at the upper ends of the pair of cut end surfaces 41, 42. In FIG. 8C, an inclined surface S is formed at the upper end of one of the cut end faces. FIG. 8D shows a groove 43 having a V-shaped cross section, and a pair of inclined surface portions S is formed. FIG. 8E shows a case where a groove 44 having a right-angled triangular cross section is formed, and an inclined surface portion S is formed. FIG. 8 (f) shows that the workpiece covering layer 12 is cut in a valley shape, and inclined surface portions S, S are formed at the upper ends of the pair of cut end faces 41, 42. FIG. 8 (g) The coating layer 12 of the workpiece is cut in a bent shape, and an inclined surface portion S is formed at the upper end of one cut end surface 41. FIG. 8 (h) shows a case where the coating layer 12 of the workpiece is bent in a valley shape, and inclined surface portions S and S are formed via the bent line, and FIG. 8 (i) shows a mountain shape. Further, the coating layer 12 of the workpiece is bent, and the inclined surface portions S and S are formed via the bent line. In the present invention, a defect 40 (cracking, bending, cutting, etc.) of the coating layer 12 as shown in FIG. 8 is detected as a defect of a workpiece (wafer, individual piece, etc.).

  The description of the defect 40 is a case where the coating layer 12 is a single layer, but when the coating layer 12 is a plurality of layers, the defect 40 is in only one of the plurality of layers. Even when all of the plurality of layers have defects 40, any layer of the plurality of layers (for example, any two layers if the coating layer 12 is three layers) is defective. There may be. Further, in each layer, the defect 40 is formed in any one of the gray layer corresponding surface (back surface), the dark layer anti-corresponding surface (front surface), and the inside, and the density layer corresponding surface (back surface) to the dark layer anti-corresponding surface (front surface). ), From the light / dark layer corresponding surface (back surface) to the inside (the part that does not reach the light / dark layer anti-corresponding surface (front surface)), from the light / dark layer anti-corresponding surface (front surface) to the inside (light / dark layer compatible surface (back surface)) There are things up to not part).

  The defect detection apparatus according to the present invention is dark field illumination, and detects a defect having at least an inclined surface portion S as shown in FIGS. 8B to 8I. As the dark field illumination, as shown in FIG. 2, for example, when the illumination direction of the illuminator 36 is arranged so that the photographing axis L and the workpiece are orthogonal, the workpiece and the illumination axis L1. The angle (elevation angle) formed by can be set to a predetermined angle. In the example shown in the figure, the elevation angles are 60 °, 70 °, and 80 °. However, the present invention is not limited to this and can be set in the range of 50 ° to 85 °.

  In this case, the defect detection apparatus shown in FIG. Therefore, in this case, the workpiece is the wafer 29. The work is placed on the rotary table 25 and rotates around its axis as shown in FIG. Moreover, the position confirmation (position detection) of the chip to be picked up can be performed with bright field illumination.

  By the way, if illumination light is applied to the workpiece, as shown in FIGS. 6A, 6B, and 6C, each layer 13 (13a, 13b, 13c) of the coating layer 12 reflects or transmits, Absorbed or scattered. Further, it is reflected by a shading pattern (wiring pattern).

  However, in order to detect the defect 40 of the coating layer 12, the reflected light may enter the imaging device 32 from the layer having the defect 40 of the coating layer 12. Therefore, as the illumination light, the intensity of the light that is reflected or scattered from the layer having the defect 40 of the coating layer 12 and incident on the imaging device is greater than the light that is reflected from at least the gray layer and incident on the imaging device 32. It is preferable that the light has a large wavelength and the influence of the shading pattern of the shading layer 11 is reduced. Here, reducing the influence of the light and shade pattern means a case where these light and shade patterns when observing the defect are erased or thinly reflected so that the observation of the defect is not impaired. That is, the brightness contrast caused by the shading pattern is lower than when light other than this light is used.

In this case, the wavelength of the illumination light can be set based on the light transmittance in the coating layer 12. The transmittance is expressed by the ratio of incident light having a specific wavelength passing through the sample in the optical and spectroscopic methods. As shown in FIG. 7, the radiation divergence of the incident light is I ₀ , and the sample (coating layer 12) When the radiation divergence of the light that has passed through is I, the transmittance T is expressed by the following equation (1).

濃淡パターンの影響を低くした光として、被覆層１２における光の透過率は５０％以下であればよい。具体的には、照明器の照明光のうち観察される波長が、前記被覆層１２がポリイミド樹脂であれば、４５０ｎｍ以下又は１０００ｎｍ以上とするのが好ましい。

As the light having a reduced influence of the light and shade pattern, the light transmittance in the covering layer 12 may be 50% or less. Specifically, the observed wavelength of the illumination light from the illuminator is preferably 450 nm or less or 1000 nm or more if the coating layer 12 is a polyimide resin.

  For this reason, as described above, the influence of the shading pattern can be lowered (smaller) in the illumination light, and the light reflected or scattered from the coating layer 12 can be projected, so that the defect (crack) 40 can be stably formed. Can be detected. In addition, the defect (crack) 40 can be detected only by setting the illumination light, and the existing detection device can be used as the device, and the cost can be reduced.

  For this reason, for the purpose of reducing the influence of the light and shade pattern, the influence of the light and shade pattern can be reduced with bright-field illumination, and the cover layer 12 (in the embodiment, the surface of the cover layer 12) is formed. Defects can be detected. For this reason, even the defect 40 having no inclined surface portion S can be detected.

  However, when the defect is small, it is difficult to detect the defect even if the influence of the shading pattern is reduced. For this reason, the dark field illumination which irradiates the light beam which illuminates the measurement object (workpiece) from an oblique direction instead of the center of the optical axis is used.

  In the dark field illumination, as shown in FIG. 9, if the illumination light is set so as to be irradiated from the lower inclined side of the inclined surface portion with respect to the imaging axis L of the imaging device 32, the illumination light is irradiated in parallel with the imaging axis L. Compared to the case, the defect image on the observation image of the defect 40 formed on the workpiece can be enlarged and observed.

  In this case, the illumination angle of the illumination light can be determined by the inclination (inclination angle) of the inclined surface portion S. That is, when the inclined surface portion S has the same inclination angle and elevation surface (when the rotation angle of the inclined surface portion S is 0 ° as shown in FIG. 9A), the inclined surface portion S is within the range of the observation side NA. It is necessary to illuminate the reflected illumination light. When the inclined surface portion S rotates, the angle of the reflected light changes according to the apparent inclination angle. As for the relationship between the inclination angle and the reflected light, when the inclination is inclined by θ, the reflected light is inclined by 2θ.

  When the inclination angle is α, the rotation angle is β, and the apparent inclination angle is γ, the apparent inclination angle γ can be expressed by the following equation (2).

このため、例えば、図９（ａ）に示すように、α＝１０°とし、β＝０°とした場合、γがαと同じ１０°となる。また、図９（ａ）に示すように、α＝１０°とし、β＝２０°とした場合、数３に示すように、γが９．４°となる。なお、図１０に、傾斜面部の傾斜角を１０°としたときの回転角と見かけの傾斜角との関係を示している。

Therefore, for example, as shown in FIG. 9A, when α = 10 ° and β = 0 °, γ is 10 °, which is the same as α. As shown in FIG. 9A, when α = 10 ° and β = 20 °, γ is 9.4 ° as shown in Equation 3. FIG. 10 shows the relationship between the rotation angle and the apparent inclination angle when the inclination angle of the inclined surface portion is 10 °.

このように、傾斜面部Ｓを有する欠陥４０が形成された場合、暗視野照明を行うともとに、ワークを回転させれば、傾斜面部Ｓの回転角がいずれの角度であっても、前記ワークに形成された欠陥４０の観察画像上の欠陥画像を大きくして観察することができる。

As described above, when the defect 40 having the inclined surface portion S is formed, the workpiece can be rotated regardless of the rotation angle of the inclined surface portion S by performing dark field illumination and rotating the workpiece. The defect image on the observation image of the defect 40 formed in the above can be enlarged and observed.

  The reason why the defect can be enlarged (thickened) by performing dark field illumination will be described. In bright field, it is necessary to set the brightness of the normal part (chip surface) to be within the dynamic range of the sensor. In addition, a part of the scattered light or direct light reflected depending on the shape of the defect part enters the camera. For this reason, the contrast with the defective portion becomes small. However, in the case of a dark field, even if the abnormal part (defective part) is set to a brightness that exceeds the dynamic range, the normal part does not become bright because direct light from the normal part (chip surface) does not enter the camera. (The normal part is flat and the scattering is small compared to the defective part). Therefore, the brightness of the abnormal portion is observed as the upper limit (or sufficiently large) of the dynamic range, and the brightness of the normal portion becomes the lower limit (or sufficiently small) of the dynamic range, so that a defect can be detected with high contrast. Here, consider a case where the defect is smaller than the resolution (pixel size) on the object. When the defect is smaller than the pixel size, the luminance of the pixel is determined by the area ratio between the defective portion and the normal portion and each luminance value.

  Further, in the bright field, as shown in FIG. 11, the luminance difference between the normal part and the abnormal part needs to be set so as to be within the dynamic range, so that the luminance of the normal part becomes dominant. Therefore, the contrast with the surrounding normal part becomes small. However, in the dark field, as shown in FIG. 12, the luminance of the defective portion can be set to greatly exceed the dynamic range. Therefore, it is possible to set the luminance of the defective part large. Therefore, the contrast with the surrounding normal part is increased. Furthermore, if there is a blur when the bright and dark images are adjacent to each other, the bright image blur is observed more widely than the dark image blur. Therefore, the defect becomes small in the bright field. That is, the contrast (becomes buried because the bright image of the surrounding normal part spreads) is lowered. On the contrary, in the dark field, the defect portion becomes large. Although the contrast decreases due to the blur (where the defect portion spreads), as described above, the defect portion can be set to a brightness exceeding the dynamic range, so that the defect becomes fat while the contrast is constant.

  By the way, if the resolution of the observation device (illumination mechanism 30) is larger than the defect size, the observation device (illumination mechanism 30) cannot see the defect. On the other hand, if the resolution of the observation device (illumination mechanism 30) is smaller than the defect size, the defect can be seen with this observation device (illumination mechanism 30). For this reason, as in the present invention, since the defect becomes fat, even if an observation device (illumination mechanism 30) having a resolution larger than the defect size is used, a defect that could not be seen (observed) in the past. It becomes possible to see by fattening. In addition, when an observation apparatus (illumination mechanism 30) having a resolution smaller than the defect size is used, the observation performance can be improved by fattening the defect.

  By the way, the defect may have an opening as shown in FIG. Even in such a case, it can be observed by scattering of light. The reason for this will be described below. The opening has a fine structure and light scattering occurs. Since the scattered light diffuses in the entire circumferential direction, a part of the light enters the lens. On the other hand, the normal part is a flat surface that is regarded as a mirror surface and travels in a direction in which almost all of the light from the dark field illumination does not enter the lens by reflection. For this reason, even if it has an opening part as shown to Fig.8 (a), the defect which consists of this opening part can be observed.

  In the above-described embodiment, the defect is detected at the pickup position P. However, a defect detection apparatus as shown in FIG. Thus, the defect detection apparatus can detect the defect 40 on the surface of the chip 21 at the bonding position Q.

  By the way, in the bonding position Q, the rotation mechanism 40 may not be provided on the workpiece (semiconductor chip or die) side. In such a case, it is preferable to use a ring illuminator 50 as shown in FIG. 3 as the dark field illuminator 36. The ring illuminator 50 is an illuminator having a plurality of light emitting units 51 arranged in at least one or more rows in a ring shape surrounding the imaging axis L of the imaging device 32.

  For this reason, if a defect detection apparatus having the ring illuminator 50 as shown in FIG. 3 is arranged at the bonding position Q, the influence of the shading pattern (wiring pattern) can be reduced at this bonding position, and the inclination of the defect 40 can be reduced. Whatever the rotation angle of the surface portion, the defect image on the observation image of the defect 40 formed on the workpiece can be enlarged and observed, and the defect (crack) 40 can be detected stably. it can. In addition, you may make it arrange | position the defect detection apparatus shown in FIG. 1 which does not use the ring illuminator 50 in the bonding position Q. FIG.

  Further, if the above-described defect detection device is arranged at the bonding position Q, it can be used for position confirmation (positioning) for observing the position of the island of the lead frame by bright field illumination.

  The die bonder shown in FIG. 4 etc. transports a workpiece such as the semiconductor chip 21 from the pickup position P to the bonding position Q. In such a bonding process, the workpiece picked up from the wafer 29 is temporarily placed on the intermediate stage. In some cases, the workpiece is picked up again from the intermediate stage and bonded.

  For this reason, it can be arranged on the defect detection device using the defect detection device shown in FIG. 1 or the ring illuminator shown in FIG. 3 on the intermediate stage. As described above, if the defect detection device is arranged on the intermediate stage, the influence of the shading pattern (wiring pattern) can be reduced on the workpiece (semiconductor chip 21 or die) on the intermediate stage, The defect image on the observation image of the formed defect 40 can be enlarged and observed, and the defect (crack) can be detected stably. If this defect detection apparatus is used, positioning can be performed also in this intermediate stage.

  By the way, in the die bonder, the defect detection is performed at the pickup position, the bonding position, the intermediate stage, etc., but at least either before or after the pickup, that is, before or after the pickup. Alternatively, defect detection can be performed both before and after pickup.

  Further, defect detection can be performed at least one of before bonding and after bonding, that is, either before bonding or after bonding, or both before bonding and after bonding.

  Furthermore, at least one of before the workpiece supply to the intermediate stage and after the workpiece discharge from the intermediate stage, that is, either before the workpiece supply to the intermediate stage and after the workpiece discharge from the intermediate stage, or to the intermediate stage The defect detection can be performed both before the workpiece supply and after the workpiece discharge from the intermediate stage.

  As described above, in the defect detection device shown in FIG. 1 or the defect detection device using the ring illuminator 50 shown in FIG. 3, a means for determining whether or not the detected defect 40 is defective as a product may be provided. . That is, in the defect detection method performed by the defect detection apparatus, a criterion for determining whether or not the detected defect is defective as a product is set in advance, and the criterion is compared with the defect image on the observation image to determine whether the defect is defective. Judge whether it is good or non-defective.

  The determination unit can be configured by the control unit 34. The control unit 34 can be constituted by, for example, a microcomputer in which a ROM (Read Only Memory), a RAM (Random Access Memory), and the like are connected to each other via a bus with a central processing unit (CPU) as a center. A storage device is connected to the microcomputer. The storage device stores determination criteria that are the determination criteria of the determination means. The storage device can be composed of an HDD (Hard Disc Drive), a DVD (Digital Versatile Disk) drive, a CD-R (Compact Disc-Recordable) drive, an EEPROM (Electronically Erasable and Programmable Read Only Memory), or the like. The ROM stores programs executed by the CPU and data.

  For this reason, a product (for example, the wafer 29, the semiconductor chip 21, or the die) in which no defect is detected by the defect detection method or the detected defect is determined to be a non-defective product by the determination unit can be used. .

  As described above, in the present invention, the influence of the shading pattern can be reduced, and the light reflected or scattered from the coating layer 21 can be projected, so that the defect (crack) 40 can be detected stably. In addition, the defect (crack) 40 can be detected only by setting the illumination light, and the existing detection device can be used as the device, and the cost can be reduced.

  If the ring illuminator 50 is used, the defect (crack) can be enlarged and observed regardless of the direction of the inclined surface portion S of the defect 40. By setting the illumination direction of the illuminator 36 to 50 ° to 85 °, it is possible to observe in an enlarged manner corresponding to most defects (cracks) 40 that occur.

  According to the die bonder, a defect 40 such as a surface crack in a workpiece to be bonded can be detected at any position from the pickup position to the bonding position.

  In addition, if a judgment criterion as to whether or not the defect detected by the defect detection method is defective as a product is set in advance and it is judged whether it is a defective product or a non-defective product, a workpiece (semiconductor chip or the like) may be used during a bonding operation or the like. ) Defects (cracks) 40 can be detected, and shipment of defective products can be prevented. In the die bonder, positioning can be detected, and a stable and highly accurate bonding process can be performed.

  By the way, the semiconductor manufacturing method includes a dicing step of cutting a wafer into pieces, a step of bonding a semiconductor chip separated into pieces in the dicing step, and sealing the semiconductor chip as a single piece with a resin. And a mold sealing step for stopping.

  For this reason, in the semiconductor manufacturing method provided with such a process, the inspection process using the said defect detection method during bonding operation may be provided. Even if the semiconductor manufacturing method includes a dicing process and an inspection process, or a semiconductor manufacturing method includes an inspection process and a mold sealing process, the dicing process, the inspection process, and the mold sealing process It may be provided.

  Moreover, the semiconductor device comprised as the workpiece | work by which the defect was not detected with the said defect detection method, or the detected defect was judged to be a non-defective product by the said defect detection method may be sufficient as a workpiece | work.

  Further, the work may be a single piece aggregate in which a plurality of individual pieces are gathered. As an individual piece aggregate, even if it is laminated in the vertical direction, even if it is arranged in parallel in the horizontal direction, or even a combination of laminated and arranged in parallel Good. When manufacturing a semiconductor device composed of such a single-piece assembly, an object consisting of one piece or a set of a predetermined number of pieces and other objects to be assembled to the target At least one of the individual pieces can be inspected using the defect detection method. That is, only the object side consisting of one piece or a set of a predetermined number of pieces is inspected by the inspection method, or only the other piece side to be collected on the object is inspected. It can be inspected by a method, or both the object side and the other individual side can be inspected.

  In addition, if a defect is found in the workpiece at any detection position in a die bonder, etc., the conveyance of the workpiece is stopped at the detection position, and the worker is notified with at least one of an alarm sound and a warning light. Can be set to. Further, a defective product discharge mechanism is provided, and if a defect is found in the workpiece, the defective product can be set to be discharged out of the apparatus from the detection position.

  The present invention is not limited to the above-described embodiment, and various modifications are possible.For example, in the above-described embodiment, the influence of the shading pattern (wiring pattern) can be reduced, and observation of defects formed on the workpiece can be performed. Although the defect on the image is enlarged and observed, the defect detection device may have only a configuration that can reduce the influence of the shading pattern (wiring pattern).

  Further, in the embodiment, the bright field illuminator is mainly used for positioning (positioning), the dark field illuminator is less affected by the shading pattern (wiring pattern), and the defect formed on the workpiece Used for illumination to observe a large defect on the observation image, but with a bright field illuminator, it is used for observation to reduce the influence of the light and shade pattern (wiring pattern), and a dark field illuminator is formed on the workpiece It may be used only when the defect on the observed image of the observed defect is enlarged and observed.

  In addition, as a method of observing the defect on the observation image by enlarging it, a method of enlarging (thickening) using an optical blur means may be used. As the optical blur means, for example, a low-pass filter can be used. That is, an image is blurred or blurred by installing a low-pass filter in front of the sensor surface. Further, in order to cause blurring, it is only necessary to degrade the signal. Therefore, the blurring means can also be configured by reducing the performance of the lens. Furthermore, blurring may be generated by defocusing using an aberration that changes the focus position depending on the wavelength of axial chromatic aberration.

  In the dark field observation, the best inclination angle (elevation angle) of the illumination light is selected according to the inclination angle of the inclined surface portion S of the defect 40 to be formed. Therefore, the inclined surface portion S of the defect 40 to be formed is selected. If is constant, the elevation angle corresponding to it is set. However, the inclination angle of the inclined surface portion S of the defect 40 to be formed may be various, and in such a case, the elevation angle cannot be made constant. For this reason, it is preferable to provide a mechanism (an angular displacement mechanism of the illuminator) that can arbitrarily change the elevation angle of the illumination light, and set the elevation angle corresponding to the inclination angle of the inclined surface portion S.

  The film thickness of the coating layer is not limited to 1 μm to 100 μm, and the material of the coating layer is not limited to polyimide resin or silicone resin. That is, it is only necessary to be able to select illumination light that reduces the influence of the shading pattern (wiring pattern) when observing the surface of the coating layer, corresponding to the material of the coating layer and the film thickness of the coating layer.

  By the way, when the illumination light reaches the wiring pattern layer when observing in the dark field using the illumination light having a wavelength other than the range of 450 nm or less or 1000 nm or more (visible light), the pattern pitch of the wiring pattern layer If is the wavelength level of light, diffraction occurs, and the light and shade pattern enters the imaging device (camera). However, by using light other than visible light, the illumination light that causes diffraction can be attenuated to reach the wiring pattern layer, and the diffracted light itself can be attenuated.

  The wavelength used for observation can be selected using a wavelength selection filter or the like. Here, the wavelength selection filter is an optical filter that transmits only light of a specific wavelength, and is an optical thin film (derivative or metal) deposited on the surface of a substrate (glass), a base that absorbs a specific wavelength. Some use materials. There are various names (short pass filter, long pass filter, band pass filter, notch filter, hot mirror, cold mirror, etc.) depending on the design of the transmission wavelength. In other words, by limiting the wavelength of the wavelength selection filter or the illumination light, observation at a specific wavelength is possible.

  By the way, as an illuminator, when the light emitting portions are arranged in a ring shape at a predetermined pitch along the circumferential direction, the pitch along the circumferential direction is the size, shape, inclination angle of the inclined surface, Depending on the direction of the defect and the like, the defect formed on the workpiece can be set arbitrarily so that it can be observed from the entire circumference.

  In addition, the “ring shape” in the case where the light emitting portions are arranged in a ring shape includes a ring having no defect, a ring having a defect, and the like. Moreover, you may arrange | position in not only a ring shape but C shape, a semicircle, etc.

  By the way, although embodiment described mainly the case where the defect 40 was formed in the surface of the coating layer 12, the defect 40 is formed in the 1st layer 13a other than the surface, ie, FIG.6 (b). In FIG. 6C, it may be formed on the first layer 13a, the second layer 13b, or the like. For this reason, the defect 40 may be formed inside the coating layer 12. Thus, even if the defect 40 is formed in the coating layer 12, the defect 40 can be detected by the defect detection apparatus and the defect detection method of the present invention. In addition, even when the coating layer 12 is a single layer as shown in FIG. 6A, defects 40 may be formed in the coating layer 12 or on the surface corresponding to the light and dark layers. Even in such a case, the defect 40 can be detected by the defect detection apparatus and the defect detection method of the present invention.

P Pickup position Q Bonding position S Inclined surface portion 11 Concentration layer 12 Cover layer 21 Semiconductor chip 29 Wafer 30 Illumination mechanism 32 Imaging device 35 Bright field illuminator 36 Dark field illuminator 38 Light emitting portion 40 Defect 50 Ring illuminator 51 Light emitting portion

Claims (26)

A defect detection device for detecting defects formed in a coating layer in a workpiece comprising a gray layer having a gray pattern derived from a semiconductor manufacturing process and a coating layer covering the gray pattern of the gray layer,
An observation mechanism having an illuminator that illuminates the workpiece, and an imaging device that observes an observation site of the workpiece illuminated by the illuminator;
Illumination light emitted from the illuminator is a wavelength at which the intensity of light that is reflected or scattered from the coating layer and incident on the imaging device is greater than light that is reflected from at least a gray layer and incident on the imaging device, A defect detection apparatus characterized in that the light has a reduced influence of the shading pattern of the shading layer.   The defect detection apparatus according to claim 1, wherein the coating layer is an organic material layer.   The defect detection apparatus according to claim 2, wherein the organic material layer is a polyimide resin.   The defect detection apparatus according to claim 1, wherein the coating layer has a thickness of 1 μm to 100 μm.   The defect detection apparatus according to claim 1, wherein the coating layer is a single layer.   The defect detection apparatus according to claim 1, wherein the covering layer includes a plurality of layers of two or more layers, and each layer is made of the same material, each layer is made of a different material, or a plurality of predetermined layers are made of the same material. .   The defect detection apparatus according to any one of claims 1 to 6, wherein the observed wavelength of the illumination light of the illuminator is 450 nm or less or 1000 nm or more.   The imaging apparatus performs dark field observation of observing the observation site of the workpiece illuminated by the illuminator from above, and the defect of the workpiece has at least one of an opening and an inclined surface portion. The defect detection apparatus according to claim 1, wherein observation is performed to enlarge a defect on an observation image of a defect formed on the workpiece.   The defect detection apparatus according to claim 8, wherein the illuminator includes a plurality of light emitting units arranged at a predetermined pitch along a circumferential direction.   The defect detection apparatus according to claim 8, wherein the illuminator is a ring illuminator including a plurality of light emitting units arranged in a ring shape surrounding an imaging axis of the imaging apparatus.   The illumination direction of the illuminator is such that an angle formed by the workpiece and the illumination axis is 50 ° to 85 ° when the photographing axis and the workpiece are arranged to be orthogonal to each other. The defect detection apparatus according to claim 10. A defect detection method for detecting defects formed in a coating layer in a workpiece comprising a gray layer with a gray pattern and a coating layer covering the gray pattern of the gray layer,
Illuminating the workpiece with illumination light having a wavelength that is greater than the intensity of light reflected or scattered from the coating layer and incident on the imaging device, than light reflected from the gray layer and incident on the imaging device, A defect detection method, wherein the observation is performed while reducing the influence of the shading pattern of the shading layer.   A defect detection method using the defect detection apparatus according to any one of claims 1 to 11.   A determination criterion as to whether or not the defect detected by the defect detection method according to claim 12 or 13 is defective as a product is set in advance, and the defect image is determined based on the determination criterion as to whether it is defective or non-defective. A defect detection method characterized by performing.   A wafer in which a defect is not detected by the defect detection method according to claim 12 or 13, or a detected defect is determined as a non-defective product by the defect detection method according to claim 14. .   15. A semiconductor in which a defect is not detected by the defect detection method according to claim 12 or 13, or the detected defect is determined as a non-defective product by the defect detection method according to claim 14. Chip.   A defect is not detected by the defect detection method according to claim 12 or claim 13, or the detected defect is composed of individual pieces that are determined as non-defective products by the defect detection method according to claim 14. A semiconductor device characterized by comprising:   A die bonder that picks up a piece as a workpiece at a pickup position, conveys the picked piece to a bonding position, and bonds the workpiece at the bonding position. The die bonder characterized by arrange | positioning the defect detection apparatus of any one of the said Claims 1-11 in the position of this.   It has the intermediate stage in which a workpiece | work is conveyed between a pick-up position and a bonding position, The defect detection apparatus of any one of the said Claims 1-11 was arrange | positioned in this intermediate stage, The die bonder according to claim 18.   The die bonder according to claim 18 or 19, wherein positioning detection is possible at at least one of a pickup position, a bonding position, and an intermediate stage between the pickup position and the bonding position. A bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position,
A bonding method, wherein a defect is detected by the defect detection device according to any one of claims 1 to 11 with respect to a workpiece at least one of before and after pickup. A bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position,
An intermediate stage is provided between the pickup position and the bonding position, and at least one of before the workpiece is supplied to the intermediate stage and after the workpiece is discharged from the intermediate stage, the workpiece according to any one of claims 1 to 11 described above. A bonding method, wherein a defect is detected by the defect detection apparatus according to any one of the above items. A bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position,
A bonding method, wherein a defect is detected by the defect detection device according to any one of claims 1 to 11 with respect to a workpiece at least one of before bonding and after bonding. A bonding method including a bonding step of picking up a workpiece at a pickup position, transporting the picked-up workpiece to a bonding position, and bonding the workpiece at the bonding position,
The inspection process using the defect detection method according to any one of claims 12 to 14 is performed at least one of before the work supply to the bonding process and after the work discharge from the bonding process. A bonding method characterized by the above.   15. A dicing process comprising an inspection process using the defect detection method according to any one of claims 12 to 14 and further cutting the wafer into pieces, and a semiconductor chip formed into pieces. A method for manufacturing a semiconductor, comprising at least one of a mold sealing step of sealing a resin with a resin. A semiconductor device manufacturing method for manufacturing a semiconductor device including an individual piece assembly composed of a plurality of individual pieces,
At least one of a target object composed of one piece or a set of a predetermined number of pieces and another piece to be gathered on the target is the above-mentioned claims 12-14. An inspection method using the defect detection method according to claim 1.

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