KR20210118742A - Die bonding apparatus and manufacturing method of semiconductor device - Google Patents

Abstract

The present invention provides a technique capable of increasing a recognition precision rate of cracks. A die bonding device comprises: a photographing device for photographing a die; an illumination device for illuminating the die from an inclination with respect to an optical system axis of the photographing device; and a control device for controlling the photographing device and the illumination device. The control device is configured to irradiate the die with light having a wavelength shorter than a green color in a visible light region with the illumination device in order to detect cracks formed in the die and to photograph the die with the photographing device.

Description

DIE BONDING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

The present disclosure relates to a die bonding apparatus, and is applicable to, for example, a die bonder that inspects a die for cracks.

A part of the manufacturing process of a semiconductor device includes a process of assembling a package by mounting a semiconductor chip (hereinafter simply referred to as a die) on a wiring board, a lead frame, or the like (hereinafter simply referred to as a substrate). Some include a step of dividing a die from a semiconductor wafer (hereinafter simply referred to as a wafer) (a dicing step), and a bonding step of mounting the divided die on a substrate. A semiconductor manufacturing apparatus used for a bonding process is a die bonding apparatus, such as a die bonder.

In a dicing process, cracks extending inward from a cut surface may generate|occur|produce in a die|dye by cutting resistance etc. at the time of dicing. Therefore, a bonding process WHEREIN: Die is imaged with a camera, and surface inspection (appearance inspection) is performed.

Japanese Patent Laid-Open No. 2019-54203

Since the protective film (surface protective film) on the die surface formed of a polyimide film or the like is a layer that can transmit the irradiated light from the lighting device, depending on the thickness of the surface protective film or the uneven pattern formed under the surface protective film, the surface protective film is It may be difficult to detect a crack formed from the upper surface or the lower surface toward the substrate such as silicon.

An object of the present disclosure is to provide a technique capable of improving crack recognition accuracy.

A brief outline of representative ones of the present disclosure is as follows.

That is, the die bonding apparatus includes an imaging device for imaging the die, an illumination device for illuminating the die from an angle with respect to the optical system axis of the imaging device, and a control device for controlling the imaging device and the lighting device. The control device is configured to irradiate the die with light having a wavelength shorter than green in the visible light region with an illuminating device in order to detect cracks formed in the die, and to image the die with the imaging device.

According to the said die bonding apparatus, the recognition precision of a crack can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic top view which shows the structural example of a die bonder.
Fig. 2 is a view for explaining a schematic configuration when viewed from the direction of arrow A in Fig. 1;
Fig. 3 is a schematic cross-sectional view showing a main part of the die supply section of Fig. 1;
Fig. 4 is a block diagram showing a schematic configuration of a control system of the die bonder of Fig. 1;
Fig. 5 is a flowchart for explaining a die bonding process in the die bonder of Fig. 1;
Fig. 6 is a schematic diagram for explaining stream lighting;
7 is a view for explaining a crack and its background.
Fig. 8 is a view for explaining the difference in the visible form of the shape due to the illumination color.
Fig. 9 is a graph showing coordinates within a field of view and measurement results of cracks and background roughness on the die surface;

First, the technique examined by the present inventors will be described with reference to FIGS. 6 to 9 . 6 is a schematic diagram for explaining the stream lighting. Fig. 7 is a view for explaining a crack and its background, Fig. 7 (a) is a view showing an image when the difference in brightness contrast of the crack with respect to the background is large, and Fig. 7 (b) is a crack with respect to the background It is a figure which shows the image in the case where the difference in brightness and contrast is small. Fig. 8 is a view for explaining the difference in the visible shape of the shape due to the illumination color. Fig. 8 (a) is an image when the illumination color is blue, and Fig. 8 (b) is an image when the illumination color is green, Fig. 8(c) is an image when the illumination color is red. 9 is a graph showing the measurement results of the coordinates within the field of view and the crack and background illuminance of the die surface. FIG. 9 (a) is a case of white illumination, FIG. 9 (b) is a case of blue illumination, and FIG. (c) of (c) is the case of red lighting.

When designing a crack inspection function for an image by a camera, the lighting configuration is divided into a bright field method that "lightens the background to darken what you want to see" and a dark field method that "makes the background dark and captures what you want to see brighter". have. In general, when inspecting fine scratches, the dark field method is better. The wafer surface is close to a mirror surface, and in order to perform inspection by the dark field method, the diagonal illumination which is an illumination method which irradiates light from an oblique angle is good. As shown in Fig. 6, when the crack of the die D is detected, the incident angle θ of the oblique illumination of the illumination device LD is as close as possible to the axis of the optical system of the imaging device CM (the angle of incidence θ is 0 as much as possible). The closer to), the easier it is to make the crack shine. In this specification, this illumination is referred to as high-angle crack detection illumination.

The spectral reflectance of the memory cell layer changes due to thinning of the surface protection film formed of a polyimide film or the like, multi-layering of the surface memory, and the like. For this reason, in high-angle crack detection illumination, as shown in FIG.7(b), a pattern, such as a stripe pattern, may appear on the memory cell of the memory array MARY on the die surface. When this stripe pattern appears on the background, it becomes difficult to distinguish the stripe pattern from the crack CRK. That is, this stripe pattern becomes an obstacle when separation of the crack region and other regions is performed by image processing, making it difficult to detect cracks with small differences in brightness contrast with respect to the background and to accurately measure crack lengths. When the area of the region constituted by the repeating pattern is larger than that of other regions, such as the memory array MARY, the effect is large.

As shown in FIG. 8, when the illumination wavelength of the streamer illumination used by this stripe pattern is set to be long, it becomes more conspicuous, and when it is made to be short, it lose|disappears more and becomes invisible.

In addition, when the crack and background illuminance of the die surface are measured, as shown in Fig. 9(a), there is a part (A) where the brightness is partially brightened under white illumination, which is a crack, and Fig. 9(a) ), (B) is the brightness of the background, (C) is an area where memory cells are raised and brightened, and (D) is an area in which total reflection is performed. In the white illumination shown in Fig. 9(a) (C), the area where the memory cell floats and becomes bright does not exist in the blue illumination in Fig. 9(b), and the region is not present in Fig. 9(c). In the illustrated red illumination, there is a region where the memory cell rises and becomes extremely bright. Accordingly, it can be seen that the red component in the white is the cause of the portion where the background brightness is brightened in the white illumination.

The above difference due to the lighting color is,

(a) Difference in absorption spectrum of surface protective film (blue is more easily absorbed)

(b) Optical interference of the surface protective film (red is more likely to interfere)

(c) Difference in the reflection spectrum of the shunt portion (die surface) in the memory layer of the silicon surface layer (red is more likely to be reflected)

it is by

That is, in the visible region, the longer the wavelength, the higher the reflectance of the die surface, and transmission and interference occur through the polyimide film therebetween, and the cell shape of the die surface is visualized. On the other hand, the shorter wavelength has fewer characteristics and reflects only the diffused light of cracks.

Then, as shown in FIG. 6, the die-bonding apparatus BD in embodiment is equipped with the imaging apparatus CM and the illumination apparatus LD. Illumination apparatus LD uses illumination of the light of a color whose wavelength in a visible light region is shorter than green so that a stripe pattern may not float on the surface. For example, a blue LED or a purple LED is used as the light source. The light source to be used may be a light source that emits blue light (for example, a blue LED), but also a white light source having a short-pass filter transmitted therethrough. Here, the short-pass filter is a filter for wavelength (color) separation that can transmit light on the short wavelength side and cut the light on the long wavelength side with a sharp stand. As for the short-pass filter as this optical filter, the cyan filter etc. which cut red and transmit blue are preferable, for example.

In addition, it is preferable that the illumination device LD is a diagonal illumination. Moreover, as for the diagonal illumination, a high angle is more preferable. The lighting device LD may be a cross-light ring illumination or may be a cross-light bar illumination. The incident angle θ is, for example, preferably more than 0 degrees and 30 degrees or less, and more preferably 5 degrees or more and 15 degrees or less.

Thereby, the contrast between the crack and the background can be made higher. As a crack that can be captured by the camera as a difference in contrast, it is possible to detect a crack with a narrower width since it is taken with a lighter (low-contrast) image and the background can be easily separated. In addition, it is possible to obtain inspection sensitivity equivalent to that of a product without a stripe pattern in the background. Thereby, the inspection sensitivity is improved, and the inspection is stabilized.

In addition, when positioning or inspecting a die or a substrate (hereinafter, collectively referred to as position recognition), illumination of a white light source is used. In addition, a white light source (white LED, etc.) is used for illumination, and when a die crack is detected, blue light or purple light is transmitted through a short pass filter and white light is irradiated without passing through a short pass filter at the time of position recognition. you can do it Moreover, you may make it provide the light source different from that for die-crack detection for the positioning or position inspection of a die|dye or a board|substrate.

EMBODIMENT OF THE INVENTION Hereinafter, an Example is demonstrated using drawings. However, in the following description, the same code|symbol is attached|subjected to the same component, and repeated description may be abbreviate|omitted. In addition, in order to make the description more clear, the drawings may be schematically expressed about the width, thickness, shape, etc. of each part compared to the actual aspect, but it is only an example and does not limit the interpretation of the present invention .

[Example]

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows the outline of the die bonder which concerns on an Example. It is a figure explaining the operation|movement of a pickup head and a bonding head, when it sees from the arrow A direction in FIG.

The die bonder 10 is roughly divided into a die supply unit 1 for supplying a die D mounted on a substrate S, a pickup unit 2 , an intermediate stage unit 3 , a bonding unit 4 , and a transfer unit. (5), the board|substrate supply part 6, the board|substrate carrying-out part 7, and the control part 8 which monitor and control the operation|movement of each part are provided. The Y-axis direction is the front-back direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply section 1 is disposed on the front side of the die bonder 10 , and the bonding section 4 is disposed on the inside side. Here, on the substrate S, one or a plurality of product areas (hereinafter referred to as package area P) that constitute one final package are printed.

First, the die supply unit 1 supplies the die D to be mounted in the package area P of the substrate S. The die supply unit 1 includes a wafer holder 12 for holding the wafer 11 , and a pushing-up unit 13 indicated by a dotted line for pushing up the die D from the wafer 11 . The die supply unit 1 moves in the XY direction by a driving means (not shown) to move the pick-up die D to the position of the push-up unit 13 .

The pickup unit 2 includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y direction, and lifts, rotates, and X the collet 22. It has each drive part (not shown) which moves in a direction. The pickup head 21 has a collet 22 (see also FIG. 2 ) for adsorbing and holding the pushed up die D at its tip, and picks up the die D from the die supply unit 1 , and is placed on the intermediate stage 31 . load up The pick-up head 21 has each drive part (not shown) which raises/lowers, rotates, and moves the collet 22, and X direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily loaded, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31 .

The bonding part 4 picks up the die D from the intermediate stage 31 and bonds it on the package area P of the substrate S being conveyed, or laminates it on the die already bonded on the package area P of the substrate S. bonding in the form The bonding part 4 is a bonding head 41 provided with the collet 42 (refer FIG. 2 also) which adsorb|sucks and holds the die D at the front-end|tip similarly to the pickup head 21, and the bonding head 41 Y It has the Y drive part 43 which moves in a direction, and the board|substrate recognition camera 44 which image|photographs the position recognition mark (not shown) of the package area P of the board|substrate S, and recognizes a bonding position. With such a structure, the bonding head 41 correct|amends a pickup position and attitude|position based on the imaging data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and the board|substrate recognition camera 44 ), the die D is bonded to the substrate based on the imaging data.

The conveyance part 5 has the board|substrate conveyance claw 51 which hold|grips and conveys the board|substrate S, and the conveyance lane 52 through which the board|substrate S moves. The board|substrate S moves by driving the nut (not shown) of the board|substrate conveyance claw 51 provided in the conveyance lane 52 with the ball screw (not shown) provided along the conveyance lane 52. As shown in FIG. With such a structure, the board|substrate S moves from the board|substrate supply part 6 along the conveyance lane 52 to a bonding position, and after bonding, it moves to the board|substrate carrying-out part 7, and the board|substrate S is transferred to the board|substrate carrying-out part 7. hand over S.

The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each unit of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

Next, the structure of the die supply part 1 is demonstrated using FIG. Fig. 3 is a schematic cross-sectional view showing a main part of the die supply section of Fig. 1;

The die supply unit 1 includes a wafer holder 12 that moves in the horizontal direction (the XY direction), and a push-up unit 13 that moves in the vertical direction. The wafer holder 12 horizontally holds the expand ring 15 for holding the wafer ring 14 and the dicing tape 16 held by the wafer ring 14 and to which a plurality of dies D are adhered. It has a support ring 17 for positioning. The push-up unit 13 is disposed on the inside of the support ring 17 .

The die supply unit 1 lowers the expand ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 is stretched, the distance between the die D is enlarged, and the die D is pushed up from below the die D by the push-up unit 13, and the die D to improve pickup performance. In addition, the adhesive for adhering the die to the substrate along with the reduction in thickness is changed from liquid to film, and is called a die attach film (DAF) 18 between the wafer 11 and the dicing tape 16. The material is pasted. In the wafer 11 having the die attach film 18 , dicing is performed on the wafer 11 and the die attach film 18 . Therefore, in the peeling process, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16 . In addition, hereinafter, the existence of the die attach film 18 is ignored and described.

The die bonder 10 includes a wafer recognition camera 24 for recognizing the posture of the die D on the wafer 11 , a stage recognition camera 32 for recognizing the posture of the die D mounted on the intermediate stage 31 ; It has a board|substrate recognition camera 44 which recognizes the mounting position on the bonding stage BS. It is necessary to correct the posture shift between the recognition cameras: the stage recognition camera 32 involved in pickup by the bonding head 41 and the substrate recognition camera 44 involved in bonding to the mounting position by the bonding head 41 )am. In this embodiment, cracks in the die D are detected using the lighting device described in the embodiment together with the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44.

The control part 8 is demonstrated using FIG. 4 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8 , a driving unit 86 , a signal unit 87 , and an optical system 88 . The control unit 8 is largely divided into a control/arithmetic unit 81 mainly composed of a CPU (Central Processor Unit), a storage unit 82 , an input/output unit 83 , a bus line 84 , and a power supply unit. (85). The storage device 82 includes a main storage device 82a constituted of a RAM storing a processing program and the like, and an auxiliary storage device 82b constituted of an HDD storing control data, image data, etc. necessary for control. has The input/output device 83 includes a monitor 83a for displaying device status and information, a touch panel 83b for inputting instructions from an operator, a mouse 83c for operating the monitor, and an optical system 88 . It has an image introduction device 83d for introducing image data. In addition, the input/output device 83 includes a motor control device 83e that controls a driving unit 86 such as an XY table (not shown) of the die supply unit 1 or a ZY drive shaft of the bonding head table, and various sensor signals or An I/O signal control device 83f for introducing or controlling a signal from a signal unit 87 such as a switch such as a lighting device is provided. The optical system 88 includes a wafer recognition camera 24 , a stage recognition camera 32 , and a substrate recognition camera 44 . The control/arithmetic unit 81 introduces necessary data through the bus line 84, calculates it, and sends information to the control of the pickup head 21 or the like, the monitor 83a, or the like.

The control unit 8 stores, in the storage device 82 , image data captured by the wafer recognition camera 24 , the stage recognition camera 32 , and the substrate recognition camera 44 via the image introduction device 83d. The positioning of the package area P of the die D and the board|substrate S, and the surface inspection of the die D and the board|substrate S are performed using the control/arithmetic device 81 by software programmed based on the saved image data. Based on the positions of the package area P of the die D and the substrate S calculated by the control/arithmetic unit 81, the driving unit 86 is moved through the motor control unit 83e by software. By this process, the position of the die on the wafer is determined, and the die D is bonded onto the package area P of the substrate S by operating as the driving units of the pickup unit 2 and the bonding unit 4 . The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 used are grayscale, color, etc., and quantify the light intensity.

FIG. 5 is a flowchart illustrating a die bonding process in the die bonder of FIG. 1 .

In the die bonding process of the embodiment, first, the control unit 8 takes out the wafer ring 14 holding the wafer 11 from the wafer cassette and places it on the wafer holder 12 , and the wafer holder 12 . ) to the reference position where the pickup of the die D is performed (wafer loading (process P1)). Next, the control unit 8 performs fine adjustment from the image acquired by the wafer recognition camera 24 so that the arrangement position of the wafer 11 exactly matches the reference position.

Next, the control unit 8 moves the wafer holder 12 on which the wafers 11 are mounted by pitching at a predetermined pitch, and horizontally holds the die D to be picked up first to the pickup position (die conveyance). (Process P2)). The wafer 11 is inspected for each die in advance by an inspection device such as a prober, map data indicating good or bad for each die is generated, and stored in the storage device 82 of the control unit 8 . Determination of whether the die D to be picked up is a good product or a defective product is made by map data. When the die D is a defective product, the control unit 8 pitches the wafer holder 12 on which the wafer 11 is mounted at a predetermined pitch, and arranges the next picked up die D at the pickup position, Skip die D.

The control unit 8 photographs the main surface (upper surface) of the die D of the pickup target by the wafer recognition camera 24 , and calculates the amount of position shift of the die D of the pickup target from the pickup position from the acquired image. The control unit 8 moves the wafer holder 12 on which the wafer 11 is mounted based on this positional shift amount, and accurately places the pick-up target die D at the pick-up position (die positioning (step P3)) ).

Next, the control unit 8 performs a surface inspection of the die D from the image acquired by the wafer recognition camera 24 (step P4). Here, the control unit 8 determines whether there is a problem in the surface inspection, and when it is determined that there is no problem in the surface of the die D, it proceeds to the next step (step P9 to be described later), but when it is determined that there is a problem, , a surface image is visually confirmed, or a more sensitive inspection or inspection with changing lighting conditions, etc. is performed. If there is a problem, a skip process is performed, and if there is no problem, the next step is processed. The skip process skips steps P9 and later of the die D, the wafer holding holders 12 on which the wafers 11 are mounted are pitch-shifted at a predetermined pitch, and the die D picked up next is placed at the pickup position.

The control part 8 loads the board|substrate S conveyance lane 52 from the board|substrate supply part 6 (board|substrate loading (process P5)). The control part 8 moves the board|substrate conveyance claw 51 which hold|grips and conveys the board|substrate S to a bonding position (substrate conveyance (process P6)). A board|substrate is imaged with the board|substrate recognition camera 44, and positioning is performed (board|substrate positioning (process P7)).

Next, the control part 8 performs surface inspection of the package area P of the board|substrate S from the image acquired with the board|substrate recognition camera 44 (process P8). Here, the control unit 8 determines whether there is a problem in the surface inspection, and when it is determined that there is no problem in the surface of the package area P of the substrate S, it proceeds to the next step (step P9 to be described later), but if there is a problem When it is determined, the surface image is visually confirmed, or a more sensitive inspection or inspection with changing lighting conditions is performed. If there is a problem, the skip process is performed, and if there is no problem, the next step is processed. The skip process skips the process P10 and later to the corresponding tab of the package area P of the board|substrate S, and performs defect registration in board|substrate start-up information.

The control unit 8 accurately places the die D to be picked up by the die supply unit 1 at the pick-up position, and then uses the pick-up head 21 including the collet 22 to transfer the die D to the dicing tape 16 . It is picked up from (die handling (process P9)) and loaded on the intermediate stage 31 (process P10). The control part 8 performs detection of the attitude|position shift (rotation shift) of the die mounted on the intermediate stage 31 by imaging with the stage recognition camera 32 (process P11). When there is an attitude shift, the control unit 8 turns the intermediate stage 31 on a plane parallel to a mounting surface having a mounting position by means of a turning drive device (not shown) provided on the intermediate stage 31 to cause the attitude shift. correct the

The control unit 8 performs a surface inspection of the die D from the image acquired by the stage recognition camera 32 (step P12). Here, the control unit 8 determines whether there is a problem in the surface inspection, and when it is determined that there is no problem in the surface of the die D, it proceeds to the next step (step P13 to be described later), but when it is determined that there is a problem , the surface image is visually confirmed, or a more sensitive inspection or inspection with changing lighting conditions is performed. is subjected to the following process. The skip process skips the steps P13 and later of the die D, pitch-shifts the wafer holder 12 on which the wafer 11 is placed at a predetermined pitch, and arranges the next pick-up die D at the pickup position.

The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the collet 42, and is bonded to the package area P of the substrate S or the package area P of the substrate S already. Die bonding to the die (die attach (step P13)).

After bonding the die D, the control unit 8 inspects whether the bonding position is correct (inspection of the relative position between the die and the substrate (step P14)). At this time, similarly to the alignment of the die to be described later, the center of the die and the center of the tab are obtained, and it is checked whether the relative positions are correct.

Next, the control part 8 performs surface inspection of the die D and the board|substrate S from the image acquired by the board|substrate recognition camera 44 (process P15). Here, the control unit 8 determines whether there is a problem in the surface inspection, and when it is determined that there is no problem in the surface of the bonded die D, it proceeds to the next process (process P9 to be described later), but it is determined that there is a problem In this case, the surface image is visually confirmed, or a more sensitive inspection or inspection with changing lighting conditions, etc. is performed. If there is a problem, a skip process is performed, and if there is no problem, the next step is processed. In the skip process, defect registration is performed in the board|substrate construction start information.

Thereafter, according to the same procedure, each die D is bonded to the package area P of the substrate S. When bonding of one substrate is completed, the substrate S is moved to the substrate carrying unit 7 with the substrate transfer claw 51 (substrate transfer (step P16)), and the substrate S is passed to the substrate carrying unit 7 ( Substrate unloading (process P17)).

Thereafter, the die D is peeled off from the dicing tape 16 one by one according to the same procedure (step P9). When the pickup of all dies D except for defective products is completed, the dicing tape 16 and the wafer ring 14 holding the dies D in the shape of the wafer 11 are unloaded into the wafer cassette (step P18). .

The crack appearance inspection is performed at at least one of the die supply part, the intermediate stage, and the bonding stage, which are the places where the die position is recognized, but it is more preferable to perform it at all the places. If it is carried out in the die supply section, cracks can be detected quickly. If performed in the intermediate stage, cracks that could not be detected in the die supply section or cracks generated after the pickup process (cracks that were not realized before the bonding process) can be detected before bonding. In addition, when performed at the bonding stage, cracks that could not be detected in the die supply unit and the intermediate stage (cracks that were not manifested before the bonding process) or cracks that occurred after the bonding process are corrected before bonding in which the next die is stacked, or before the substrate is discharged. can be detected.

As mentioned above, although the invention made|formed by the present inventors was specifically demonstrated based on embodiment and an Example, this indication is not limited to the said embodiment and Example, It goes without saying that various modifications are possible.

For example, although die appearance inspection recognition is performed after die position recognition in the embodiment, die position recognition may be performed after die appearance inspection recognition.

In addition, although the DAF is affixed on the back surface of a wafer in an Example, the DAF may not be needed.

Moreover, although each of a pickup head and a bonding head is provided in an Example, two or more may be sufficient respectively. In addition, although the intermediate stage is provided in the embodiment, the intermediate stage is not required. In this case, the pickup head and the bonding head may be used concurrently.

Further, although bonding is performed with the front surface of the die facing up in the embodiment, the front and back sides of the die may be inverted after the die is picked up to bond with the back side of the die facing up. In this case, it is not necessary to provide an intermediate stage. This device is called a flip chip bonder.

Moreover, although a bonding head is provided in an embodiment, a bonding head may not be needed. In this case, the picked-up die is loaded into a container or the like. This device is called a pickup device.

BD: Die Bonding Device
CM: imaging device
CNT: control unit
D: die
LD: lighting device

Claims (15)

an imaging device for imaging the die;
an illumination device for illuminating the die from an angle with respect to an optical system axis of the imaging device;
a control device for controlling the imaging device and the lighting device;
The control device is configured to irradiate the die with light having a wavelength shorter than green in a visible light region by the illumination device to detect a crack formed in the die, and to image the die with the imaging device being a die bonding device. According to claim 1,
The lighting device is a die bonding device configured to irradiate a blue light to the die using a blue LED as a light source. According to claim 1,
and the lighting device is configured to transmit blue light to the die by passing a short pass filter through a white light source. According to claim 1,
The said control apparatus is a die bonding apparatus comprised so that, when recognizing the position of the said die|dye, while irradiating white light by a 2nd illumination device, the said imaging device may image the said die. According to claim 1,
the lighting device is configured to transmit blue light to the die by passing a short pass filter through the light from the white light source;
The control device is a die bonding device configured to image the die with the imaging device while irradiating white light to the light from the white light source without transmitting the short-pass filter when the position of the die is recognized. . According to claim 1,
Further comprising: a die supply unit having a wafer ring holder for holding the dicing tape to which the die is pasted;
and the control device is configured to image the die affixed to the dicing tape using the imaging device and the lighting device. According to claim 1,
a bonding head for bonding the die onto a substrate or an already bonded die;
and the control device is configured to image a die bonded on the substrate or die using the imaging device and the lighting device. According to claim 1,
a pickup head for picking up the die;
Further comprising an intermediate stage on which the picked-up die is loaded,
and the control device is configured to image the die mounted on the intermediate stage using the imaging device and the lighting device. According to claim 1,
The die bonding apparatus has a large area in the area where the area is not composed of the repeating pattern. According to claim 1,
wherein the die is a semiconductor memory device. (a) a step of loading a wafer ring holder holding the dicing tape to which the die is affixed to the die bonding apparatus according to any one of claims 1 to 5;
(b) loading the substrate;
(c) picking up the die;
(d) bonding the picked-up die onto the substrate or a die already bonded to the substrate; 12. The method of claim 11,
The (c) process loads the picked-up die on an intermediate stage,
The step (d) is a method of manufacturing a semiconductor device in which the die mounted on the intermediate stage is picked up. 12. The method of claim 11,
(e) before the step (c), further comprising a step of inspecting the appearance of the die using the imaging device and the lighting device. 12. The method of claim 11,
(f) after the step (d), further comprising a step of inspecting the appearance of the die using the imaging device and the lighting device. 13. The method of claim 12,
(g) after the step (c) and before the step (d), further comprising a step of inspecting the appearance of the die using the imaging device and the lighting device.

Images