MY202139A - Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method - Google Patents

Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method

Info

Publication number
MY202139A
MY202139A MYPI2019000211A MYPI2019000211A MY202139A MY 202139 A MY202139 A MY 202139A MY PI2019000211 A MYPI2019000211 A MY PI2019000211A MY PI2019000211 A MYPI2019000211 A MY PI2019000211A MY 202139 A MY202139 A MY 202139A
Authority
MY
Malaysia
Prior art keywords
semiconductor
defect detection
light
manufacturing
semiconductor device
Prior art date
Application number
MYPI2019000211A
Inventor
Haruka TAI
Atsumasa Kambayashi
Original Assignee
Canon Machinery Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017112873A external-priority patent/JP6505776B2/en
Application filed by Canon Machinery Inc filed Critical Canon Machinery Inc
Publication of MY202139A publication Critical patent/MY202139A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

This defect (40) detection device detects a defect (40) formed in a covering layer in a workpiece provided with a light and dark layer having a light and dark pattern, and the covering layer covering the light and dark pattern of the light and dark layer. Illumination light emitted from an illuminator has a wavelength at which the intensity of light that is reflected or scattered from the covering layer and is incident on an imaging device is higher than that of light that is reflected from at least the light and dark layer and is incident on the imaging device. Therefore, the illumination light reduces the influence of the light and dark pattern of the light and dark layer.
MYPI2019000211A 2016-07-05 2017-06-29 Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method MY202139A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016133401 2016-07-05
JP2017112870 2017-06-07
JP2017112873A JP6505776B2 (en) 2016-07-05 2017-06-07 Defect detection apparatus, defect detection method, wafer, semiconductor chip, die bonder, semiconductor manufacturing method, and semiconductor device manufacturing method
PCT/JP2017/023932 WO2018008512A1 (en) 2016-07-05 2017-06-29 Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
MY202139A true MY202139A (en) 2024-04-05

Family

ID=60912617

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2019000211A MY202139A (en) 2016-07-05 2017-06-29 Defect detection device, defect detection method, wafer, semiconductor chip, semiconductor device, die bonder, bonding method, semiconductor manufacturing method, and semiconductor device manufacturing method

Country Status (2)

Country Link
MY (1) MY202139A (en)
WO (1) WO2018008512A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7299728B2 (en) * 2019-03-22 2023-06-28 ファスフォードテクノロジ株式会社 Semiconductor manufacturing equipment and semiconductor device manufacturing method
CN113748495B (en) * 2019-05-31 2024-07-16 华为技术有限公司 Device for detecting chip cracks
CN121013974A (en) * 2023-09-01 2025-11-25 应用材料公司 Multidirectional illumination for hybrid bonding defect detection
CN117878025B (en) * 2024-03-11 2024-05-28 江苏芯德半导体科技有限公司 Method for automatically clamping and controlling defective chips on wafer map

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373831A (en) * 1989-05-19 1991-03-28 Mitsubishi Rayon Co Ltd Device for inspecting defect
JP3033453B2 (en) * 1994-11-17 2000-04-17 ニチデン機械株式会社 Small chip sensing method
JPH09105724A (en) * 1995-08-04 1997-04-22 Kobe Steel Ltd Surface inspection device
JPH10253547A (en) * 1997-03-06 1998-09-25 Kao Corp Board appearance inspection system
JP2000321212A (en) * 1999-05-13 2000-11-24 Nikon Corp Surface inspection equipment
JP3898401B2 (en) * 1999-11-29 2007-03-28 株式会社日立ハイテクインスツルメンツ Parts supply device
US6966476B2 (en) * 2003-07-30 2005-11-22 Stanley Fastening Systems, L.P. Integrated check pawl, last nail-retaining, and dry fire lock-out mechanism for fastener-driving tool
JP4631002B2 (en) * 2006-06-29 2011-02-16 独立行政法人産業技術総合研究所 Method for detecting defects and apparatus therefor
JP2008046011A (en) * 2006-08-17 2008-02-28 Nikon Corp Surface inspection device
JP2010190722A (en) * 2009-02-18 2010-09-02 Hitachi High-Technologies Corp Method and device for inspecting defect
JP2012013614A (en) * 2010-07-02 2012-01-19 Hitachi Ltd Specular inspection method and specular inspection device

Also Published As

Publication number Publication date
WO2018008512A1 (en) 2018-01-11

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