JP7010633B2 - Semiconductor manufacturing equipment and methods for manufacturing semiconductor equipment - Google Patents

Description

The present disclosure relates to semiconductor manufacturing equipment and is applicable to, for example, a die bonder including a camera that recognizes a die.

As part of the manufacturing process of semiconductor devices, there is a process of mounting a semiconductor chip (hereinafter, simply referred to as a die) on a wiring board, a lead frame, etc. (hereinafter, simply referred to as a substrate) and assembling a package. Partly, there is a step of dividing a die from a semiconductor wafer (hereinafter, simply referred to as a wafer) (dying step) and a bonding step of mounting the divided die on a substrate. The semiconductor manufacturing equipment used in the bonding process is a die bonder.

A die bonder is a device that uses solder, gold plating, or resin as a bonding material to bond (mount and bond) a die onto a substrate or a die that has already been bonded. In a die bonder that bonds a die to the surface of a substrate, for example, the die is adsorbed from the wafer using a suction nozzle called a collet, picked up, transported onto the substrate, and a pressing force is applied and the bonding material is heated. By doing so, the operation (work) of performing bonding is repeated. The collet is a holder having suction holes, sucking air, and sucking and holding the die, and has the same size as the die.

In the dicing process, cracks extending inward from the cut surface may occur in the die due to cutting resistance during dicing.

Generally, when inspecting fine scratches, the dark field method is better. The surface of the wafer is close to a mirror surface, and oblique light illumination, which is an illumination method that shines light from an angle, is preferable for inspecting by the dark field method.

Japanese Unexamined Patent Publication No. 2017-117916

In dark field inspection, it is required that the surface of the wafer or die that is the background does not reflect the light of the illumination, but the angle differs depending on the wafer or die, and there is no angle that can be said to not reflect at any angle. ..
An object of the present disclosure is to provide a technique capable of improving the crack recognition accuracy.
Other issues and novel features will become apparent from the description and accompanying drawings herein.

The following is a brief overview of the representative ones of this disclosure.
That is, the semiconductor manufacturing apparatus images a die having a first side, a second side connected to the first side, a third side facing the first side, and a fourth side facing the second side. It includes an image pickup device, a lighting device that illuminates the die at an angle with respect to the optical system axis of the image pickup device, and a control device that controls the image pickup device and the illumination device. The control device has (a) a first direction from the center of the first side toward the center of the die, a second direction from the center of the second side toward the center of the die, and the center of the third side. The illumination from the third direction toward the center of the die and the fourth direction from the center of the fourth side toward the center of the die is suppressed, and (b) the first side and the fourth side A fifth direction from the first corner including the corner to be formed toward the center of the die, and a sixth direction from the second corner including the corner formed by the second side and the first side toward the center of the die. Includes a direction, a seventh direction from a third triangular portion including an angle formed by the third side and the second side toward the center of the die, and an angle formed by the fourth side and the third side. The die is imaged by the image pickup device by illuminating from the eighth direction toward the center of the die from the fourth square portion.

According to the semiconductor manufacturing apparatus, the crack recognition accuracy can be improved.

Schematic top view showing a configuration example of a die bonder FIG. 1 is a diagram illustrating a schematic configuration when viewed from the direction of arrow A. External perspective view showing the configuration of the die supply unit of FIG. Schematic cross-sectional view showing the main part of the die supply part of FIG. The block diagram which shows the schematic structure of the control system of the die bonder of FIG. A flowchart illustrating a die bonding process in the die bonder of FIG. Schematic diagram illustrating the incident angle of oblique light illumination FIG. 8 is a schematic diagram showing the reflected light from the wafer or die of oblique illumination. FIG. 9 is a schematic diagram illustrating the brightness and darkness of the die depending on the incident angle of oblique light illumination. Enlarged schematic diagram of the wafer surface Plan view showing arrangement of lighting equipment for die crack inspection Layout drawing showing the arrangement of the lighting device for die crack inspection and the lighting device for die recognition Schematic perspective view showing the lighting device according to the first modification. Schematic perspective view showing the means for rotating the lighting device of FIG. Schematic plan view showing an arrangement when position recognition is performed by the lighting device of FIG. Schematic plan view showing an arrangement when performing a die crack inspection with the lighting device of FIG. Schematic perspective view showing the lighting device according to the modified example 2. Schematic perspective view showing means for controlling lighting and extinguishing of the lighting device of FIG. Schematic plan view illustrating the lighting and extinguishing positions of the lighting device of FIG.

First, the techniques examined by the inventor of the present application will be described with reference to FIGS. 7 to 10. FIG. 7 is a schematic diagram illustrating the incident angle of oblique light illumination. FIG. 8 is a schematic diagram showing light reflected by a wafer or die of light-shielding lighting. FIG. 9 is a schematic diagram illustrating the brightness and darkness of the die depending on the incident angle of the oblique light illumination. FIG. 10 is an enlarged schematic view of the wafer surface.

When designing a crack inspection function for images with a camera, the lighting configuration is a bright field method that "makes the background bright and makes what you want to see dark" and a dark field that "makes the background dark and makes what you want to see bright". There is a field of view method.

Generally, when inspecting fine scratches, the dark field method is better. The surface of the wafer is close to a mirror surface, and oblique light illumination, which is an illumination method that shines light from an angle, is preferable for inspecting by the dark field method. The problem is the determination of the angle of incidence (θ). As shown in FIG. 7, when detecting cracks in a wafer or die, the incident angle (θ) of oblique illumination should be as close as possible to the axis of the camera's optical system (incident angle (θ) should be as close to 0 as possible). Easy to shine. However, as shown in FIG. 8, when light is applied to the wafer surface or the die surface, there is a phenomenon that the light is reflected at a plurality of angles. Further, as shown by the arrow in FIG. 9, when the incident angle of the illumination is changed from small to large, the die becomes brighter or darker. This is because the reflective surface in the film on the wafer surface or the surface layer through which light can pass is not completely flat and has a plurality of fine reflective surfaces. This reflection angle is not constant for the wafer, but changes depending on the surface processing condition of the wafer (difference in product type, difference in film thickness, difference in lot) and the like.

In the dark field method inspection, it is required that the surface of the wafer as the background does not reflect the light of illumination, but the angle is different for each wafer, and there is no angle that can be said to not reflect at any angle.

Due to this phenomenon, even if an attempt is made to determine an angle at which a dark field can be stably obtained and the incident light is closest to the optical axis of the lens, the angle is not constant, and adjustment is required each time.

Most of the pattern processing on the wafer surface is square transfer in the XY direction, and as shown in FIG. 10, when the die is viewed from above, irradiation in the orthogonal direction (irradiation from the X-axis direction and the Y-axis direction) tends to reflect light. ..

Therefore, in the embodiment, as shown in FIG. 10, the illumination light is irradiated from an oblique direction (direction not parallel to the X-axis direction and the Y-axis direction). As a result, the reflection of the illumination light is unlikely to occur, the surface of the die can be made into a dark field in a stable manner, and a sufficiently inspectable area for cracks reflected in white can be sufficiently secured.

Hereinafter, examples and modifications will be described with reference to the drawings. However, in the following description, the same components may be designated by the same reference numerals and repeated description may be omitted. In addition, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited.

FIG. 1 is a top view showing an outline of a die bonder according to an embodiment. FIG. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1.

The die bonder 10 is roughly divided into a supply unit 1 for supplying a die D for mounting a product area (hereinafter referred to as a package area P) which is one or a plurality of final packages on a printed substrate S, and a pickup unit 2. It has an intermediate stage unit 3, a bonding unit 4, a transport unit 5, a substrate supply unit 6, a substrate unloading unit 7, and a control unit 8 that monitors and controls the operation of each unit. The Y-axis direction is the front-rear direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side.

First, the die supply unit 1 supplies the die D to be mounted on the package area P of the substrate S. The die supply unit 1 has a wafer holding table 12 for holding the wafer 11 and a push-up unit 13 indicated by a dotted line for pushing up the die D from the wafer 11. The die supply unit 1 is moved in the XY direction by a drive means (not shown), and the die D to be picked up is moved to the position of the push-up unit 13.

The pickup unit 2 includes a pickup head 21 that picks up the die D, a Y drive unit 23 of the pickup head that moves the pickup head 21 in the Y direction, and each drive unit (not shown) that moves the collet 22 up / down, rotates, and moves in the X direction. , Have. The pickup head 21 has a collet 22 (see also FIG. 2) that attracts and holds the pushed-up die D to the tip, picks up the die D from the die supply unit 1, and places it on the intermediate stage 31. The pickup head 21 has each drive unit (not shown) that raises and lowers, rotates, and moves the collet 22 in the X direction.

The intermediate stage unit 3 has an intermediate stage 31 on which the die D is temporarily placed, and a stage recognition camera 32 for recognizing the die D on the intermediate stage 31.

The bonding unit 4 picks up the die D from the intermediate stage 31 and bonds it on the package area P of the substrate S to be conveyed, or laminates it on the die already bonded on the package area P of the substrate S. Bond in shape. The bonding unit 4 includes a bonding head 41 having a collet 42 (see also FIG. 2) that attracts and holds the die D to the tip like the pickup head 21, a Y drive unit 43 that moves the bonding head 41 in the Y direction, and a substrate. It has a substrate recognition camera 44 that captures a position recognition mark (not shown) of the package area P of S and recognizes the bonding position.
With such a configuration, the bonding head 41 corrects the pickup position / orientation based on the image pickup data of the stage recognition camera 32, picks up the die D from the intermediate stage 31, and makes the substrate based on the image pickup data of the substrate recognition camera 44. Die D is bonded to.

The transport unit 5 has a substrate transport claw 51 that grips and transports the substrate S, and a transport lane 52 to which the substrate S moves. The substrate S moves by driving a nut (not shown) of the substrate transport claw 51 provided in the transport lane 52 with a ball screw (not shown) provided along the transport lane 52.
With such a configuration, the substrate S moves from the substrate supply unit 6 to the bonding position along the transfer lane 52, and after bonding, moves to the substrate unloading unit 7 and passes the substrate S to the substrate unloading unit 7.

The control unit 8 includes a memory for storing a program (software) for monitoring and controlling the operation of each unit of the die bonder 10, and a central processing unit (CPU) for executing the program stored in the memory.

Next, the configuration of the die supply unit 1 will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing an external perspective view of the die supply unit. FIG. 4 is a schematic cross-sectional view showing a main part of the die supply part.

The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction) and a push-up unit 13 that moves in the vertical direction. The wafer holding table 12 has an expanding ring 15 for holding the wafer ring 14 and a support ring 17 for horizontally positioning the dicing tape 16 held on the wafer ring 14 and to which a plurality of dies D are adhered. The push-up unit 13 is arranged inside the support ring 17.

The die supply unit 1 lowers the expanding ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held in the wafer ring 14 is stretched to widen the interval between the dies D, and the push-up unit 13 pushes up the die D from below the die D to improve the pick-up property of the die D. The adhesive that adheres the die to the substrate as it becomes thinner changes from a liquid to a film, and a film-like adhesive material called a die attach film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. There is. In the wafer 11 having the die attach film 18, dicing is performed on the wafer 11 and the die attach film 18. Therefore, in the peeling step, the wafer 11 and the die attach film 18 are peeled from the dicing tape 16. In the following, the description will be made ignoring the existence of the die attach film 18.

The die bonder 10 has a wafer recognition camera 24 that recognizes the posture of the die D on the wafer 11, a stage recognition camera 32 that recognizes the posture of the die D mounted on the intermediate stage 31, and a mounting position on the bonding stage BS. It has a board recognition camera 44 for recognizing. It is the stage recognition camera 32 involved in the pickup by the bonding head 41 and the substrate recognition camera 44 involved in bonding to the mounting position by the bonding head 41 that must correct the posture deviation between the recognition cameras. In this embodiment, a crack in the die D is detected by using a lighting device described later together with the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44.

The control unit 8 will be described with reference to FIG. FIG. 5 is a block diagram showing a schematic configuration of the control system. The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 is roughly divided into a control / arithmetic unit 81 mainly composed of a CPU (Central Processor Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 is an auxiliary storage device 82b composed of a main storage device 82a composed of a RAM for storing a processing program and the like, and an HDD for storing control data, image data, and the like necessary for control. And have. The input / output device 83 includes a monitor 83a for displaying the device status and information, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor, and an image capture device 83d for capturing image data from the optical system 88. And have. Further, the input / output device 83 includes a motor control device 83e that controls a drive unit 86 such as an XY table (not shown) of the die supply unit 1 and a ZZ drive shaft of a bonding head table, various sensor signals, lighting devices, and the like. It has an I / O signal control device 83f that captures or controls a signal from a signal unit 87 such as a switch of the above. The optical system 88 includes a wafer recognition camera 24, a stage recognition camera 32, and a substrate recognition camera 44. The control / arithmetic unit 81 takes in necessary data via the bus line 84, performs arithmetic operations, controls the pickup head 21 and the like, and sends information to the monitor 83a and the like.

The control unit 8 stores the image data captured by the wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 in the storage device 82 via the image acquisition device 83d. Using the software programmed based on the stored image data, the control / arithmetic unit 81 is used to position the package area P of the die D and the substrate S, and to inspect the surface of the die D and the substrate S. The drive unit 86 is moved by software via the motor control device 83e based on the positions of the die D and the package area P of the board S calculated by the control / arithmetic unit 81. By this process, the die on the wafer is positioned and operated by the drive unit of the pickup unit 2 and the bonding unit 4 to bond the die D onto the package area P of the substrate S. The wafer recognition camera 24, the stage recognition camera 32, and the substrate recognition camera 44 to be used are grayscale, color, or the like, and the light intensity is quantified.

FIG. 6 is a flowchart illustrating a die bonding process in the die bonder of FIG.
In the die bonding step of the embodiment, first, the control unit 8 takes out the wafer ring 14 holding the wafer 11 from the wafer cassette and places it on the wafer holding table 12, and the wafer holding table 12 is picked up by the die D. It is conveyed to the reference position where it is performed (wafer loading (process P1)). Next, the control unit 8 makes fine adjustments so that the arrangement position of the wafer 11 exactly matches the reference position from the image acquired by the wafer recognition camera 24.

Next, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch and holds it horizontally, thereby arranging the die D to be picked up first at the pickup position (die transfer). (Step P2)). The wafer 11 is inspected in advance for each die by an inspection device such as a prober, and map data indicating good or bad is generated for each die and stored in the storage device 82 of the control unit 8. Whether the die D to be picked up is a good product or a defective product is determined by the map data. When the die D is a defective product, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch, arranges the die D to be picked up next at the pickup position, and arranges the defective product. Die D is skipped.

The control unit 8 photographs the main surface (upper surface) of the die D to be picked up by the wafer recognition camera 24, and calculates the amount of displacement of the die D to be picked up from the pickup position from the acquired image. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed based on this amount of misalignment, and accurately arranges the die D to be picked up at the pickup position (die positioning (process P3)).

Next, the control unit 8 inspects the surface of the die D from the image acquired by the wafer recognition camera 24 (step P4). The details of the surface inspection (visual inspection) of the die will be described later. Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and if it is determined that there is no problem on the surface of the die D, the process proceeds to the next step (step P9 described later), but it is determined that there is a problem. In that case, the surface image is visually confirmed, or a high-sensitivity inspection or an inspection with different lighting conditions is performed. If there is a problem, skip processing is performed, and if there is no problem, the next step processing is performed. In the skip process, steps P9 and subsequent steps of the die D are skipped, the wafer holding table 12 on which the wafer 11 is placed is moved by a predetermined pitch, and the die D to be picked up next is arranged at the pickup position.

The control unit 8 is placed on the substrate S transport lane 52 by the substrate supply unit 6 (board loading (process P5)). The control unit 8 moves the substrate transfer claw 51 that grabs and conveys the substrate S to the bonding position (board transfer (process P6)).

The board is imaged by the board recognition camera 44 and positioned (board positioning (process P7)).

Next, the control unit 8 inspects the surface of the package area P of the substrate S from the image acquired by the substrate recognition camera 44 (step P8). Details of the substrate surface inspection will be described later. Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and if it is determined that there is no problem on the surface of the package area P of the substrate S, the process proceeds to the next step (step P9 described later), but there is a problem. If it is determined to be present, the surface image is visually checked, or a high-sensitivity inspection or an inspection with different lighting conditions is performed. If there is a problem, skip processing is performed. If there is no problem, the next step is performed. Perform processing. In the skip process, steps P10 and subsequent steps to the corresponding tab in the package area P of the substrate S are skipped, and defects are registered in the substrate construction start information.

The control unit 8 picks up the die D from the dicing tape 16 by the pickup head 21 including the collet 22 after the die D to be picked up is accurately arranged at the pickup position by the die supply unit 1 (die handling (process P9)). , Placed on the intermediate stage 31 (step P10). The control unit 8 detects the posture deviation (rotational deviation) of the die placed on the intermediate stage 31 with the stage recognition camera 32 (step P11). When there is a posture deviation, the control unit 8 rotates the intermediate stage 31 on a plane parallel to the mounting surface having the mounting position by a turning drive device (not shown) provided in the intermediate stage 31 to correct the posture deviation.

The control unit 8 inspects the surface of the die D from the image acquired by the stage recognition camera 32 (step P12). The details of the surface inspection (visual inspection) of the die will be described later. Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and if it is determined that there is no problem on the surface of the die D, the process proceeds to the next step (step P13 described later), but it is determined that there is a problem. In that case, visually check the surface image, or perform high-sensitivity inspection or inspection with different lighting conditions, and if there is a problem, place the die on a defective tray (not shown) and skip it. If there is no problem, process the next step. In the skip process, the process P13 and subsequent steps of the die D are skipped, the wafer holding table 12 on which the wafer 11 is placed is moved by a predetermined pitch, and the die D to be picked up next is arranged at the pickup position.

The control unit 8 picks up the die D from the intermediate stage 31 by the bonding head 41 including the collet 42, and die-bonds the die D to the package area P of the substrate S or the die already bonded to the package area P of the substrate S (diatouch). (Step P13)).

After bonding the die D, the control unit 8 inspects whether the bonding position is accurate (relative position inspection between the die and the substrate (step P14)). At this time, the center of the die and the center of the tab are obtained in the same manner as the alignment of the die described later, and it is inspected whether the relative position is correct.

Next, the control unit 8 inspects the surfaces of the die D and the substrate S from the image acquired by the substrate recognition camera 44 (step P15). Details of the surface inspection of the die D and the substrate S will be described later. Here, the control unit 8 determines whether or not there is a problem in the surface inspection, and if it is determined that there is no problem on the surface of the bonded die D, the process proceeds to the next step (step P9 described later), but there is a problem. If it is determined that the surface image is visually confirmed, or a high-sensitivity inspection or an inspection with different lighting conditions is performed, if there is a problem, skip processing is performed, and if there is no problem, the next process processing is performed. I do. In the skip process, defects are registered in the board construction start information.

After that, the dies D are bonded to the package area P of the substrate S one by one according to the same procedure. When the bonding of one substrate is completed, the substrate S is moved to the substrate unloading section 7 by the substrate transport claw 51 (board transfer (process P16)), and the substrate S is passed to the substrate unloading section 7 (board unloading (process P17). )).

After that, the dies D are peeled off from the dicing tape 16 one by one according to the same procedure (step P9). When the pickup of all the dies D except the defective products is completed, the dicing tape 16 and the wafer ring 14 and the like holding the dies D in the outer shape of the wafer 11 are unloaded to the wafer cassette (step P18).

Next, the lighting for surface inspection will be described with reference to FIGS. 11 and 12. FIG. 11 is a plan view showing the arrangement of the lighting device for die crack inspection. FIG. 12 is a layout diagram showing the arrangement of the lighting device for die crack inspection and the lighting device for die recognition.

As shown in FIG. 11, the die crack inspection lighting devices CL1 to CL4 for inspecting cracks in the die D are arranged so that the illumination is incident from the vicinity of the corner of the die D to the vicinity of the center of the die D. When the four sides of the die D are arranged along the X-axis direction or the Y-axis direction, the angles formed by the incident direction and the X-axis direction of the horizontal illumination of the die crack inspection lighting devices CL1 to CL4 are α1, α2, and α3, respectively. , Α4, 0 degrees <α1, α2, α3, α4 <90 degrees, and α1 ≈ α2 ≈ α3 ≈ α4 ≈ 45 degrees is preferable. In FIG. 11, the lighting devices for die crack inspection are arranged at four places, but may be one place, two places, or three places. The incident angle (θ) of the vertical illumination is preferably 5 to 85 degrees.

The die D has a first side DS1 and a third side DS3 extending in the X direction, and a second side DS2 and a fourth side DS4 extending in the Y direction in a plan view. The first side DS1 and the third side DS3 face each other, and the second side DS2 and the fourth side DS4 face each other. A corner is formed between the first side DS1 and the fourth side DS4, and a predetermined region including the corner is referred to as a first corner portion DA1. The second side DS2 and the first side DS1 form a corner, and a predetermined region including the corner is referred to as a second corner portion DA2. A corner is formed between the third side DS3 and the second side DS2, and a predetermined region including the corner is referred to as a third triangular portion DA3. The fourth side DS4 and the third side DS3 form a corner, and a predetermined region including the corner is referred to as a fourth corner portion DA4. In FIG. 11, since the die D is square, the incident light from the lighting devices CL1 to CL4 passes through the corner of the die D, but if it is rectangular, it does not pass through the corner. However, the first corner portion DA1, the second corner portion DA2, the third triangular portion DA3 and the fourth corner portion DA4 are regions of a predetermined size, and the incident light from the lighting devices CL1 to CL4 is the first corner portion DA1. It passes through the second corner portion DA2, the third triangular portion DA3 and the fourth corner portion DA4.

As shown in FIG. 12, the die recognition illuminating devices RL1 to RL4 that recognize the die D in order to position or inspect the position of the die D are arranged at positions facing each of the four sides of the die D. The incident direction of the horizontal illumination from the die recognition illuminating devices RL1 and RL3 arranged facing the sides along the X-axis direction is the Y-axis direction, and they are arranged facing the sides along the Y-axis direction. The incident direction of the horizontal illumination from the die recognition illumination devices RL2 and RL4 is the X-axis direction.

The wafer surface that is not completely mirror-reflected has a bright field depending on the incident direction of light, but the wafer surface processing often follows the X-axis direction and the Y-axis direction, and the light is applied to the processing direction of the wafer. When the incident direction is narrowed down to a region that is not parallel or perpendicular to the X-axis direction and the Y-axis direction, the wafer surface does not reflect light in the optical axis direction of the camera regardless of the angle of incidence in the vertical direction. As a result, a dark field can be stably secured without depending on the surface condition of the wafer.

<Modification example>
Hereinafter, some typical modifications will be illustrated. In the following description of the modified example, the same reference numerals as those in the above-described embodiment may be used for the portions having the same configuration and function as those described in the above-described embodiment. As for the explanation of such a portion, the explanation in the above-described embodiment can be appropriately incorporated within a technically consistent range. In addition, a part of the above-mentioned embodiment and all or a part of the plurality of modifications can be appropriately and combinedly applied within a technically consistent range.

(Modification 1)
FIG. 13 is a schematic perspective view showing the lighting device according to the first modification. FIG. 14 is a schematic perspective view showing a means for rotating the lighting device of FIG. 13. FIG. 15 is a schematic plan view showing an arrangement when position recognition is performed by the lighting device of FIG. FIG. 16 is a schematic plan view showing an arrangement when a die crack inspection is performed with the lighting device of FIG.

In the case of the embodiment, the lighting device for die crack inspection is arranged separately from the lighting device for die recognition, but as shown in FIG. 13, in the modified example 1, the positioning or position inspection of the die D (hereinafter collectively referred to as position recognition). In the case of performing Place it at the four corners of the die D.

As shown in FIG. 14, the driving unit of the lighting device controlled by the control unit 8 includes a rotating ring 91 to which the oblique light bar lighting devices BLD1 to BLD4 are attached, a fixing ring 92 for supporting the rotating ring 91, and a fixing ring 92. The columns 93 and 94 that support the above are provided. The rotating ring 91 rotates outside the fixing ring 92 by a belt 96 driven by a motor 95. As a result, the oblique bar lighting devices BLD1 to BLD4 can be rotated in the horizontal direction.

As shown in FIG. 15, when the position of the die D is recognized, the irradiation light from the oblique light bar illumination devices BLD1 and BLD3 is directed toward the center of the die D along the Y-axis direction, and is emitted from the oblique light bar illumination devices BLD2 and BLD4. The irradiation light is directed toward the center of the die D along the X-axis direction.

As shown in FIG. 16, when inspecting the crack of the die D, the irradiation light from the oblique bar lighting devices BLD1, BLD2, BLD3, and BLD4 is the direction of the die D rotated 45 degrees from the X-axis direction to the Y-axis direction. Head to the center.

When inspecting cracks in the die D, the oblique bar lighting device was placed at a position rotated 45 degrees from the processing direction of the wafer, but it is not limited to 45 degrees, and the irradiation light is in the X-axis direction and. Any angle may be used as long as it travels in a direction that does not follow the Y-axis direction.

(Modification 2)
The lighting device according to the second modification will be described with reference to FIGS. 17 to 19.

FIG. 17 is a schematic perspective view showing the lighting device according to the second modification. FIG. 18 is a schematic perspective view showing a means for controlling lighting and extinguishing of the lighting device of FIG. FIG. 19 is a schematic plan view illustrating the lighting and extinguishing positions of the lighting device of FIG.

In the case of the embodiment and the modified example 1, the oblique light bar illumination device was used, but in the modified example 2, a ring type oblique light illumination device (oblique light ring illumination device) RLD was used as shown in FIG. 17, and the area R1 in the shaded area was used. -R4 is turned on and off to perform position recognition and crack inspection. When performing a crack inspection, the oblique light ring illuminator turns off the irradiation from the X-axis direction and the Y-axis direction with respect to the processing direction of the wafer.

As shown in FIG. 18, the control unit of the lighting device controlled by the control unit 8 includes a first power supply control box 97_1 for controlling lighting / extinguishing of areas R1 to R4 of the oblique light ring illumination device RLD, and an oblique light ring illumination device. A power cable 98_1 for connecting the RLD areas R1 to R4 and the first power supply control box 97_1, a second power supply control box 97_1 for controlling lighting / extinguishing of the oblique light ring lighting devices RLD areas R5 to R8, and an oblique light ring lighting device. A power cable 98_2 for connecting the regions R5 to R8 of the RLD and the second power supply control box 97_2 is provided.

As shown in FIG. 19, when the position of the die D is recognized, all the areas R1 to R8 of the oblique light ring illumination device RLD are turned on, and the irradiation light is directed to the die D. Therefore, there is irradiation light directed from the oblique light ring illumination device RLD toward the center of the die D along the X-axis direction and the Y-axis direction.

When inspecting the crack of the die D, the regions R1 to R4 of the oblique light ring lighting device RLD are turned off, the regions R5 to R8 are turned on, and the irradiation light from the regions R5 to R8 is directed to the die D. The regions R1 to R4 are regions that intersect the X-axis direction or the Y-axis direction, and are regions having a size of 1/8 of the entire oblique light ring illuminating device RLD, respectively. The regions R5 to R8 are regions that intersect the intermediate direction between the X-axis direction and the Y-axis direction, and are regions having a size of 1/8 of the entire oblique light ring illuminating device RLD, respectively. Therefore, the irradiation light from the oblique light ring illuminating device RLD is directed toward the center of the die D from the region rotated 45 degrees from the X-axis direction to the Y-axis direction, and the die is directed from the oblique light ring illuminating device RLD along the X-axis direction and the Y-axis direction. There is no irradiation light toward the center of D.

In this modification, the regions R1 to R4 each indicate a region having a size of 1/8 of the entire oblique light ring illuminating device RLD, but are not limited to 1/8, for example, when the die to be bonded is small. The regions R1 to R4 may be made larger than 1/8, and the regions R5 to R8 may be made smaller than 1/8 to irradiate in a narrower region.

The appearance inspection of the crack is performed at at least one place of the die supply part, the intermediate stage, and the bonding stage where the die position recognition is performed, but it is more preferable to perform the inspection at all the places. If it is done in the die supply section, cracks can be detected quickly. If the intermediate stage is performed, cracks that could not be detected in the die supply unit or cracks that occurred after the pickup process (cracks that did not become apparent before the bonding process) can be detected before bonding. Further, if the bonding stage is performed, cracks that could not be detected in the die supply section and the intermediate stage (cracks that did not become apparent before the bonding process) or cracks generated after the bonding process are bonded by laminating the next die. It can be detected before or before the substrate is ejected.

Although the invention made by the present inventor has been specifically described above based on Examples and Modifications, the present invention is not limited to the above Examples and Modifications, and can be variously modified. Not to mention.

For example, in the first modification, the rotation of the oblique bar lighting device has been described, but the present invention is not limited to this, and the die may be rotated. For example, the irradiation direction may be changed by rotating the intermediate stage on which the die is placed.
Further, in the embodiment, the die appearance inspection recognition is performed after the die position recognition, but the die position recognition may be performed after the die appearance inspection recognition.
Further, in the embodiment, the DAF is attached to the back surface of the wafer, but the DAF may not be present.
Further, in the embodiment, one pickup head and one bonding head are provided, but two or more of each may be provided. Further, although the intermediate stage is provided in the embodiment, the intermediate stage may not be provided. In this case, the pickup head and the bonding head may be used in combination.
Further, in the embodiment, the bonding is performed with the front surface of the die facing up, but after picking up the die, the front and back surfaces of the die may be inverted and the back surface of the die may be facing up for bonding. In this case, the intermediate stage may not be provided. This device is called a flip chip bonder.
Further, although the bonding head is provided in the embodiment, the bonding head may not be provided. In this case, the picked-up die is placed in a container or the like. This device is called a pickup device.

10 ... Die bonder 1 ... Die supply unit 13 ... Push-up unit 2 ... Pickup unit 24 ... Wafer recognition camera 3 ... Alignment unit 31 ... Intermediate stage 32 ... Stage recognition Camera 4 ・ ・ ・ Bonding part 41 ・ ・ ・ Bonding head 42 ・ ・ ・ Collet 44 ・ ・ ・ Board recognition camera 5 ・ ・ ・ Transfer part 51 ・ ・ ・ Board transfer claw 8 ・ ・ ・ Control part 9 ・ ・ ・ Board BS ... Bonding stage D ... Die P ... Package area CL1, CL2, CL3, CL4 ... Crack detection lighting device RL1, RL2, RL3, RL4 ... Die recognition lighting device BLD1, BLD2, BLD3, BLD4 ... Oblique bar lighting device RLD ... Oblique ring lighting device

Claims (12)

An image pickup device that images a die having a first side, a second side connected to the first side, a third side facing the first side, and a fourth side facing the second side.
A lighting device that illuminates the die at an angle with respect to the optical system axis of the image pickup device, and
A control device that controls the image pickup device and the lighting device,
Equipped with
The lighting device has a first direction from the center of the first side toward the center of the die, a second direction from the center of the second side toward the center of the die, and a center of the third side to the die. From the first corner including the corner formed by the third direction toward the center, the fourth direction from the center of the fourth side toward the center of the die, and the first side and the fourth side. The fifth direction toward the center of the die, the sixth direction from the second corner including the angle formed by the second side and the first side toward the center of the die, the third side and the second side. The seventh direction from the third triangular portion including the corner formed by the sides toward the center of the die, and the fourth direction including the corner formed by the fourth side and the third side toward the center of the die. It is possible to illuminate from the eighth direction,
The control device is
When recognizing the position of the die, the lighting device illuminates the die from the first direction, the second direction, the third direction, and the fourth direction, and the image pickup device images the die.
When inspecting cracks in the die, the lighting device suppresses illumination from the first direction, the second direction, the third direction, and the fourth direction, and the fifth direction, the sixth direction, and the above. A semiconductor manufacturing apparatus configured to image the die with the image pickup device by illuminating from the seventh direction and the eighth direction . In claim 1 ,
The lighting device is
A first die recognition lighting device arranged at a position facing the first side,
A second die recognition lighting device arranged at a position facing the second side,
A lighting device for recognizing a third die, which is arranged at a position facing the third side,
A fourth die recognition lighting device arranged at a position facing the fourth side, and
A lighting device for inspection of a first die crack, which is arranged at a position facing the first corner portion,
A second die crack inspection lighting device arranged at a position facing the second corner portion,
A third die crack inspection lighting device arranged at a position facing the third triangular portion,
A fourth die crack inspection lighting device arranged at a position facing the fourth square portion, and a lighting device for inspection.
Equipped with
The control device is
When recognizing the position of the die, the lighting device for recognizing the first die illuminates from the first direction, the illuminating device for recognizing the second die illuminates from the second direction, and the lighting for recognizing the third die. The device illuminates from the third direction, the fourth die recognition illuminating device illuminates from the fourth direction, and the image pickup device images the die.
When inspecting a crack in the die, the first die crack inspection lighting device illuminates from the fifth direction, the second die crack inspection lighting device illuminates from the sixth direction, and the third die crack is inspected. A semiconductor manufacturing apparatus configured to illuminate from the seventh direction with an inspection illuminating device, illuminate from the eighth direction with the fourth die crack inspection illuminating device, and image the die with the image pickup device. In claim 1 ,
The lighting device is
The first oblique bar lighting device and
Second oblique bar lighting device and
The third oblique bar illuminator, which is placed facing the first oblique bar illuminator,
The fourth oblique bar illuminator, which is placed facing the second oblique bar illuminator,
Equipped with
The control device is
When recognizing the position of the die
The first oblique bar illuminating device illuminates from the first direction, the second oblique bar illuminating device illuminates from the second direction , and the third oblique bar illuminating device illuminates from the third direction . , The fourth oblique light bar illuminating device illuminates the die from the fourth direction , and the image pickup device images the die.
When inspecting cracks in the die
The first oblique bar illuminating device illuminates from the fifth direction, the second oblique bar illuminating device illuminates from the sixth direction , and the third oblique bar illuminating device illuminates from the seventh direction . A semiconductor manufacturing apparatus configured to illuminate the die from the eighth direction with the fourth oblique light bar illuminating device and to image the die with the imaging device. In claim 1 ,
The illuminating device is an oblique light ring illuminating device having a first region, a second region, a third region, a fourth region, a fifth region, a sixth region, a seventh region, and an eighth region.
The control device is
When recognizing the position of the die
The first region, the second region, the third region, the fourth region, the fifth region, the sixth region, the seventh region, and the eighth region are lit.
The first region is illuminated from the first direction , the second region is illuminated from the second direction , the third region is illuminated from the third direction , and the fourth region is illuminated from the third direction. Illuminated from the fourth direction, illuminated from the fifth direction in the fifth region, illuminated from the sixth direction in the sixth region, and illuminated from the seventh direction in the seventh region. Illuminate, illuminate from the eighth direction in the eighth region, and image the die with the image pickup device.
When inspecting cracks in the die
The first region, the second region, the third region, and the fourth region are turned off, and the fifth region, the sixth region, the seventh region, and the eighth region are turned on.
The fifth region is illuminated from the fifth direction, the sixth region is illuminated from the sixth direction , the seventh region is illuminated from the seventh direction , and the eighth region is illuminated from the seventh direction. A semiconductor manufacturing device configured to illuminate from eight directions and image the die with the image pickup device. In claim 1, further
A die supply unit having a wafer ring for holding the dicing tape to which the die is attached is provided.
The control device is a semiconductor manufacturing device configured to image a die attached to the dicing tape by using the image pickup device and the lighting device. In claim 1, further
A bonding head for bonding the die onto a substrate or a die that has already been bonded is provided.
The control device is a semiconductor manufacturing device configured to image a die bonded onto the substrate or die by using the image pickup device and the lighting device. In claim 1, further
The pickup head that picks up the die and
The intermediate stage on which the picked up die is placed and
Equipped with
The control device is a semiconductor manufacturing device configured to image a die mounted on the intermediate stage by using the image pickup device and the lighting device. (A) The step of preparing the semiconductor manufacturing apparatus according to any one of claims 1 to 4 .
(B) The process of carrying in the wafer ring that holds the dicing tape to which the die is attached, and
(C) The process of bringing in the substrate and
(D) The process of picking up the die and
(E) A step of bonding the picked-up die onto the substrate or a die that has already been bonded to the substrate.
A method for manufacturing a semiconductor device. In claim 8 ,
In the step (d), the picked-up die is placed on an intermediate stage, and the picked-up die is placed on the intermediate stage.
The step (e) is a method for manufacturing a semiconductor device that picks up a die placed on the intermediate stage. The method for manufacturing a semiconductor device according to claim 8 , further comprising (f) a step of inspecting the appearance of the die using the image pickup device and the lighting device before the step (d). The method for manufacturing a semiconductor device according to claim 8 , further comprising (g) a step of inspecting the appearance of the die using the image pickup device and the lighting device after the step (e). The semiconductor device according to claim 9 , further comprising (h) a step of inspecting the appearance of the die using the image pickup device and the lighting device after the step (d) and before the step (e). Manufacturing method.

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