TW201929113A - Semiconductor manufacturing apparatus and method for manufacturing semiconductor device - Google Patents

Abstract

Provided is a technology capable of improving recognition accuracy of a crack. A semiconductor manufacturing apparatus comprises: an imaging device imaging a square die; a lighting device obliquely illuminating the die with respect to an optical system axis of the imaging device; and a control device controlling the imaging device and the lighting device. The control device (a) suppresses lighting from the center of each side of four sides of the die toward the center of the die, (b) is illuminated from the vicinity of the four corners of the die to a direction toward the center of the die, and images the die in the imaging device.

Description

Semiconductor manufacturing device and method for manufacturing semiconductor device

For the semiconductor manufacturing device of the present disclosure, for example, a die bonder including a camera for identifying a wafer can be applied.

A part of the manufacturing process of a semiconductor device includes a step of mounting a semiconductor wafer (hereinafter, simply referred to as a wafer) on a wiring board, a lead frame, etc. (hereinafter, simply referred to as a substrate) and assembling a package. A part of the packaging process includes a step of dividing a wafer from a semiconductor wafer (hereinafter simply referred to as a wafer) (dicing step), and a bonding step of mounting the divided wafer on a substrate. The semiconductor manufacturing apparatus used in the bonding process is a die bonder.

The die bonder is a device that uses solder, metal plating, and resin as the bonding material to bond (attach after mounting) the wafer to the substrate or the wafer that has been bonded. The wafer is bonded to, for example, a die bonder on the surface of the substrate, and it is repeated: using an adsorption nozzle called a collet, the wafer is adsorbed and picked up from the wafer, transferred to the substrate, pressed, and heated. The bonding material undergoes the operation (operation) of joining. The collet is a holder having an adsorption hole that attracts air and adsorbs and holds the wafer, and has the same size as the wafer.

In the cutting process, cracks that extend from the cut surface to the inside of the wafer are generated through the cutting resistance and the like during cutting.

In the case of general inspection for a slight injury, the dark field method is preferable. As for the wafer surface approaching the mirror surface and performing the inspection by the dark field method, the oblique illumination method, which is the illumination method from the oblique direction to the light, is preferable.

[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2017-117916

[Questions to be Solved by the Invention]

In the dark field inspection, the surface of the wafer or wafer that is pursuing the background does not reflect the light of the illumination. However, the angle is different for each wafer or wafer, and there is no angle that does not reflect it. Can be asserted.
The subject of the present disclosure is to provide a technique that can improve the accuracy of crack identification.
Other problems and novel features are described in the description and drawings of this specification.

[Means for solving problems]

A brief description of the representative outline in this disclosure is as follows.
That is, the semiconductor manufacturing apparatus includes a photographing device having a first side, a second side connected to the first side, a third side facing the first side, and a fourth side facing the second side. An imaging device for the wafer; an illumination device for illuminating the wafer from an inclined position relative to the optical system axis of the imaging device; and a control device for controlling the imaging device and the illumination device. The control device (a) suppresses the second direction from the center of the first side toward the center of the wafer, the second direction from the center of the second side toward the center of the wafer, and the third The center of the side faces the third direction of the center of the wafer, and the fourth direction of the side from the center of the fourth side toward the center of the unit; (b) performing the illumination from the first side and the first side. The first corner portion of the corner formed by the four sides faces the fifth direction of the center of the wafer, and the second corner portion including the corner formed by the second side and the first side faces the center of the wafer. A sixth direction, a seventh direction from a third corner portion including an angle formed by the third side and the second side toward the center of the wafer, and a seventh direction including the fourth side and the third side. The fourth corner of the formed corner is illuminated in the eighth direction toward the center of the wafer; the wafer is captured by the imaging device.

[Inventive effect]

According to the semiconductor manufacturing apparatus described above, the accuracy of crack identification can be improved.

First, the technology reviewed by the inventor of the present case will be described with reference to FIGS. 7 to 10. FIG. 7 is a schematic diagram illustrating an incident angle of oblique illumination. FIG. 8 is a schematic diagram showing reflected light caused by a light-shielded wafer or a wafer. FIG. 9 is a schematic diagram illustrating the brightness and darkness of a wafer caused by the angle of incidence of oblique illumination. FIG. 10 is an enlarged view of a wafer surface.

In the case of designing a crack inspection function in an image caused by a camera, its lighting composition is a bright field method of "shooting the background is bright and the object to be observed is dim", and the darkness of the "shooting background is dark and the object to be observed is the dark" Way of vision.

In the case of general inspection for a slight injury, the dark field method is preferable. As for the wafer surface approaching the mirror surface and performing the inspection by the dark field method, the oblique illumination method, which is the illumination method from the oblique direction to the light, is preferable. The problem is the decision of its angle of incidence (θ). As shown in FIG. 7, when inspecting a crack of a wafer or a wafer, the incident angle (θ) of the oblique illumination is as close as possible to the axis of the optical system of the camera (the incident angle (θ) is as close to 0 as possible). The cracks are more likely to glow. However, as shown in FIG. 8, if light is irradiated on the wafer surface or the wafer surface, it is a pity that light is reflected at a plurality of angles. Furthermore, as shown by the arrow in FIG. 9, if the incident angle of the illumination is changed from small to large, the wafer will be bright and dim all at once. This is because the reflection surface in the film on the wafer surface or the surface layer that can transmit light is not completely flat, and has a plurality of fine reflection surfaces. This reflection angle is not constant on the wafer, and varies depending on the state of the surface processing of the wafer (different types, different film thicknesses, and different batches).

Under the dark field inspection, the surface of the wafer that is pursuing the background does not reflect the light of illumination, but its angle is different for each wafer, and there is no angle that can be asserted without reflecting.

By using this phenomenon, a dark field of view can be obtained stably. Even if it is only an angle at which the incident light is decided to approach the optical axis of the lens, the angle is not constant. Unfortunately, each adjustment is necessary.

The pattern processing on the surface of the wafer has many square transfers in the XY direction. As shown in FIG. 10, when the wafer is viewed from above, the irradiation in the straight direction (the irradiation from the X-axis direction and the Y-axis direction) is easy to reflect light.

Therefore, in the embodiment, as shown in FIG. 10, the illumination light is irradiated from an oblique direction (a direction that is not parallel to the X-axis direction and the Y-axis direction). As a result, it is difficult to cause reflection and stabilization of the illumination light, so that the surface of the wafer can be viewed in a dark field, and the inspectable area of the white reflection crack can be sufficiently ensured.

Hereinafter, examples and modifications will be described using drawings. However, in the following description, the same constituent elements are assigned the same reference numerals, and redundant descriptions are omitted. In addition, the drawings are intended to make it clearer that the width, thickness, and shape of each part are shown schematically compared to the actual state, but this is just one example, and is not intended to limit the explanation of the present invention. .

[Example]

FIG. 1 is a schematic plan view showing a die bonder according to the embodiment. FIG. 2 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1.

The die bonder 10 is roughly divided and has a supply unit 1 for supplying a wafer D, which is mounted on a product area where one or a plurality of packages are printed (hereinafter, referred to as a package area P). The substrate S; the pick-up section 2; the intermediate stage section 3; the joint section 4; the transport section 5; the substrate supply section 6; the substrate carry-out section 7; and the control section 8 which monitors and controls the operations of each section. The Y-axis direction is the front-back direction of the die bonder 10, and the X-axis direction is the left-right direction. The wafer supply unit 1 is arranged on the front side of the die bonder 10, and the bonding unit 4 is arranged on the back side.

First, the wafer supply unit 1 supplies a wafer D, which is mounted on a package region P of a substrate S. The wafer supply unit 1 includes: a wafer holding table 12 that holds the wafer 11; and a top unit 13 indicated by a broken line that tops the wafer D from the wafer 11. The wafer supply unit 1 moves to the XY direction by a driving means (not shown), so that the wafer D to be picked up moves to the position of the top unit 13.

The picking section 2 includes a picking head 21 for picking up the wafer D, a Y driving section 23 of the picking head for moving the picking head 21 in the Y direction, and unillustrated parts for lifting, rotating, and moving the collet 22 Drive section. The pick-up head 21 includes a collet 22 (see also FIG. 2) that holds and holds the wafer D that has been lifted to the top end, picks up the wafer D from the wafer supply unit 1, and places the wafer D on the intermediate stage 31. The pick-up head 21 includes drive units (not shown) for raising, lowering, rotating, and moving the collet 22 in the X direction.

The intermediate stage unit 3 includes an intermediate stage 31 on which the wafer D is temporarily placed, and a stage identification camera 32 for identifying the wafer D on the intermediate stage 31.

The bonding portion 4 picks up the wafer D from the intermediate stage 31 and is bonded to the package area P of the substrate S in the process of being transferred, or is stacked on the wafer that has been bonded to the package area P of the substrate S. Form. The coupling part 4 includes a coupling head 41 which is provided with a collet 42 (see also FIG. 2), which is similar to the pick-up head 21 in that the wafer D is adsorbed and held at the end, and a Y driving part 43 is used for coupling. The head 41 moves in the Y direction; the substrate recognition camera 44 captures a position recognition mark (not shown) of the package area P of the substrate S, and recognizes the combined position.
With this configuration, the combination head 41 recognizes the shooting data of the camera 32 based on the stage, corrects the pickup position and posture, picks up the wafer D from the intermediate stage 31, and combines the wafer with the shooting data of the camera 44 on the substrate. Yuan D.

The conveyance unit 5 includes a substrate conveyance claw 51 that grasps and conveys the substrate S, and a conveyance path 52 that the substrate S moves. The substrate S is moved by driving a non-illustrated nut of a substrate transfer claw 51 provided on the transfer line 52 with a ball screw (not shown) provided along the transfer line 52.
With this configuration, the substrate S is moved from the substrate supply section 6 along the conveying path 52 to the bonding position, and after the bonding, it is moved to the substrate carrying-out section 7 and the substrate S is transferred to the substrate carrying-out section 7.

The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each unit of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

Next, the structure of the wafer supply unit 1 will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing an external perspective view of a wafer supply unit. Fig. 4 is a schematic cross-sectional view showing a main part of a wafer supply unit.

The wafer supply unit 1 includes a wafer holding table 12 that moves in a horizontal direction (XY direction), and a top unit 13 that moves in a vertical direction. The wafer holding table 12 includes: an expansion ring 15 that holds the wafer ring 14; and a support ring 17 that horizontally positions the dicing tape 16 that is held on the wafer ring 14 and is followed by a plurality of wafers D. The top unit 13 is disposed inside the support ring 17.

The wafer supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when it is on the top of the wafer D. As a result, the dicing tape 16 held on the wafer ring 14 is extended to widen the interval between the wafers D, and the wafer D is lifted up from below the wafer D by the upper unit 13 to improve the pickup property of the wafer D. In addition, as the thickness of the wafer is reduced, the adhesive on the substrate is changed from a liquid state to a film shape, and a wafer called a crystal-solid film (DAF) 18 is attached between the wafer 11 and the dicing tape 16. Membrane-like adhesive material. The wafer 11 having the crystal-solid film 18 is diced with respect to the wafer 11 and the crystal-solid film 18. Therefore, in the peeling step, the wafer 11 and the die-bonding film 18 are peeled from the dicing tape 16. In the following description, the existence of the crystal-solid film 18 is ignored.

The die bonder 10 includes a wafer recognition camera 24 that recognizes the attitude of the wafer D on the wafer 11, a stage recognition camera 32 that recognizes the attitude of the wafer D placed on the intermediate stage 31, and a recognition combination The substrate recognition camera 44 at the mounting position on the table BS. It is necessary to correct the posture deviation between the recognition cameras, the stage recognition camera 32 participating in the pickup by the bonding head 41, and the substrate recognition camera 44 participating in the bonding to the mounting position by the bonding head 41. In this embodiment, the wafer identification camera 24, the stage identification camera 32, and the substrate identification camera 44 are used together to detect cracks in the wafer D using an illumination device described later.

The control unit 8 will be described using FIG. 5. Fig. 5 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8, a driving unit 86, a signal unit 87, and an optical system 88. The control unit 8 is roughly divided and includes a control calculation device 81 mainly composed of a CPU (Central Processor Unit), a memory device 82, an input / output device 83, a bus bar 84, and a power supply unit 85. The memory device 82 includes a main memory device 82a composed of a RAM that stores a processing program and the like, and an auxiliary memory device 82b composed of an HDD that stores control data, video data, and the like necessary for control. The input / output device 83 includes a monitor 83a for displaying device status or information, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor, and an image acquisition device for acquiring image data from the optical system 88.入 装置 83d. In addition, the input / output device 83 includes a motor control device 83e that controls a driving unit 86 such as an XY bed (not shown) of the wafer supply unit 1 or a ZY drive shaft combined with the head bed; and various sensors The signal unit 87, such as a controller signal or a switcher such as a lighting device, takes in a signal or controls an I / O signal control device 83f. The optical system 88 includes a wafer identification camera 24, a stage identification camera 32, and a substrate identification camera 44. The control calculation device 81 fetches and calculates necessary data through the bus bar 84, and sends the information to the control of the pickup head 21 and the like, or the monitor 83a and the like.

The control unit 8 stores the image data captured by the wafer identification camera 24, the stage identification camera 32, and the substrate identification camera 44 in the memory device 82 through the image taking device 83d. Based on the saved image data, using the programmed software and using the control calculation device 81, the positioning of the package area P of the wafer D and the substrate S, and the surface inspection of the wafer D and the substrate S are performed. Based on the positions of the wafer D and the package area P of the substrate S calculated by the control calculation device 81, the drive unit 86 is operated through the motor control device 83e using software. Through this process, the positioning of the wafer on the wafer is performed, the driving unit of the pickup unit 2 and the bonding unit 4 is operated, and the wafer D is bonded to the package region P of the substrate S. The wafer identification camera 24, the stage identification camera 32, and the substrate identification camera 44 used are gray scale, color, and the like, and the light intensity is quantified.

FIG. 6 is a flowchart illustrating a die bonding process in the die bonder of FIG. 1. FIG.
In the die bonding step of the embodiment, first, the control unit 8 removes the wafer ring 14 holding the wafer 11 from the wafer cassette, places the wafer ring 14 on the wafer holding table 12, and transfers the wafer holding table 12 To the reference position where wafer D is to be picked up (wafer loading (step P1)). Next, the control unit 8 performs fine adjustment from the image obtained by the wafer recognition camera 24 so that the arrangement position of the wafer 11 is correct and consistent with its reference position.

Next, the control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch, and arranges the wafer D to be picked up to the picking position (wafer transport) by holding it horizontally. (Step P2)). The wafer 11 is inspected in advance using an inspection device such as a wafer pin tester for each wafer, and map data of each wafer is good or bad is stored in the memory device 82 of the control unit 8. The determination of whether or not the wafer D to be picked up is a qualified product or a defective product is performed using map data. The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed at a predetermined pitch when the wafer D is a defective product, and arranges the wafer D to be picked up to a picking position. The wafer D of the defective product has been ignored.

The control unit 8 captures the principal surface (upper surface) of the wafer D to be picked up by the wafer recognition camera 24, and calculates a position shift amount from the picked-up position of the wafer D to be picked up from the acquired image. . The control unit 8 moves the wafer holding table 12 on which the wafer 11 is placed based on the position shift amount, and correctly arranges the wafer D to be picked up at the pickup position (wafer positioning (step P3)). .

Next, the control unit 8 performs a surface inspection of the wafer D from the image acquired by the wafer recognition camera 24 (step P4). The details of the surface inspection (appearance inspection) of the wafer will be described later. Here, the control unit 8 uses surface inspection to determine whether there is a problem. When it is determined that there is no problem on the surface of the wafer D, the control unit 8 proceeds to the next step (step P9 to be described later). , Visually confirm the surface image, or carry out further high-sensitivity inspection or inspection of changing lighting conditions, etc., if there is a problem, ignore it, and if there is no problem, proceed to the next process. Ignoring the processing means that after the step P9 of the wafer D has been ignored, the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch, and the wafer D to be picked up is then arranged at the picking position.

The control unit 8 is mounted on the substrate S conveyance path 52 by the substrate supply unit 6 (substrate loading (step P5)). The control part 8 moves the board | substrate conveyance claw 51 which grasps and conveys the board | substrate S to a coupling position (board | substrate conveyance (step P6)).

The substrate is imaged by the substrate recognition camera 44 and positioned (substrate positioning (step P7)).

Next, the control unit 8 performs a surface inspection of the package region P of the substrate S from the image acquired by the substrate recognition camera 44 (step P8). The details of the substrate surface inspection will be described later. Here, the control unit 8 determines whether there is a problem by surface inspection. When it is determined that there is no problem on the surface of the package area P of the substrate S, the control unit 8 proceeds to the next step (step P9 described later) and determines that there is a problem. In the case of visual inspection, visually confirm the surface image, or carry out further high-sensitivity inspection or inspection of changing lighting conditions, etc. If there is a problem, ignore the processing, and if there is no problem, proceed to the next process. Ignoring the processing is to ignore the registration of the substrate start information after the step P10 of the package area P of the substrate S, which is in compliance with the label.

The control unit 8 picks up the wafer D from the dicing tape 16 after the wafer D is correctly placed at the pickup position by the wafer supply unit 1. (Unpacking (step P9)), and placing it on the intermediate stage 31 (step P10). The control unit 8 detects the posture deviation (rotation deviation) of the wafer mounted on the intermediate stage 31, and performs imaging using the stage recognition camera 32 (step P11). The control unit 8 corrects the intermediate stage 31 on a plane parallel to a mounting surface having a mounting position by a swivel driving device (not shown) provided on the intermediate stage 31 when there is a posture deviation. Posture deviation.

The control unit 8 performs a surface inspection of the wafer D from the image acquired by the stage recognition camera 32 (step P12). The details of the surface inspection (appearance inspection) of the wafer will be described later. Here, the control unit 8 determines whether there is a problem by surface inspection. When it is determined that there is no problem on the surface of the wafer D, the control unit 8 proceeds to the next step (step P13 described later), and when it is determined that there is a problem. , Visually confirm the surface image, or carry out further high-sensitivity inspection or inspection to change the lighting conditions, etc., if there is a problem, place the wafer on the non-defective product tray (not shown) and ignore it. In case of problems, proceed to the next step. Ignoring the processing means that after the step P13 of the wafer D has been ignored, the wafer holding table 12 on which the wafer 11 is placed is moved at a predetermined pitch, and the wafer D to be picked up is arranged at the picking position.

The control unit 8 picks up the wafer D from the intermediate stage 31 through the bonding head 41 including the collet 42, and the crystal is bonded to the package region P of the substrate S or the crystal that has been bonded to the package region P of the substrate S. Element (crystal solid (step P13)).

The control unit 8 checks whether the bonding position is correct after bonding the wafer D (the relative position of the wafer and the substrate is checked (step P14)). At this time, the center of the crystal element and the center of the label are obtained in the same manner as the positioning of the crystal element described later, and it is checked whether the relative position is correct.

Next, the control unit 8 checks the surface of the wafer D and the substrate S from the image acquired by the substrate recognition camera 44 (step P15). Details of the surface inspection of the wafer D and the substrate S will be described later. Here, the control unit 8 determines whether there is a problem by surface inspection, and when it is determined that there is no problem on the surface of the bonded wafer D, it proceeds to the next step (step P9 described later) and determines that there is a problem. In the case of visual inspection, visually confirm the surface image, or carry out further high-sensitivity inspection or inspection of changing lighting conditions, etc. If there is a problem, ignore the processing, and if there is no problem, proceed to the next process. Under the ignore process, a bad registration is made in the board start information.

Thereafter, the wafer D is bonded to the package region P of the substrate S one by one in the same procedure. When the bonding of one substrate is completed, the substrate S is moved to the substrate carrying-out portion 7 by the substrate carrying claw 51 (substrate carrying (step P16)), and the substrate S is delivered to the substrate carrying-out portion 7 (substrate unloading (step P17)).

Thereafter, the wafer D is peeled from the dicing tape 16 one by one in the same procedure (step P9). After picking up all the wafers D except for the defective products, the dicing tape 16 and wafer ring 14 holding the wafers D into the shape of the wafer 11 are unloaded into the wafer cassette (step P18) .

Next, the illumination of the surface inspection will be described using FIGS. 11 and 12. FIG. 11 is a plan view showing the arrangement of a lighting device for wafer crack inspection. FIG. 12 is a layout diagram showing the arrangement of a lighting device for wafer crack inspection and a lighting device for wafer identification.

As shown in FIG. 11, the wafer crack inspection lighting devices CL1 to CL4 for inspecting cracks of the wafer D are arranged to emit light from the vicinity of the corner of the wafer D to the vicinity of the center of the wafer D. When the four sides of the wafer D are arranged along the X-axis direction or the Y-axis direction, the angle between the incident direction of the horizontal illumination of the wafer crack inspection lighting devices CL1 to CL4 and the X-axis direction If it is determined as α1, α2, α3, and α4, 0 degrees <α1, α2, α3, α4 <90 degrees, and α1 ≒ α2 ≒ α3 ≒ α4 ≒ 45 degrees are preferred. Although the illumination devices for wafer crack inspection are arranged in four places in FIG. 11, they may be arranged in one place, two places, or three places. The angle of incidence (θ) of the illumination in the vertical direction is preferably 5 to 85 degrees.

The wafer D includes, in a plan view, a first side DS1 and a third side DS3 extending in the X direction, and a second side DS2 and a fourth side DS4 extending in the Y direction. The first side DS1 is opposite to the third side DS3, and the second side DS2 is opposite to the fourth side DS4. The first side DS1 and the fourth side DS4 form an angle, and a specific area including the corner is referred to as a first corner portion DA1. The second side DS2 forms an angle with the first side DS1, and a specific area including the corner is referred to as a second corner portion DA2. The third side DS3 and the second side DS2 form an angle, and a specific area including the corner is referred to as a third corner portion DA3. The fourth side DS4 and the third side DS3 form an angle, and a specific area including the corner is referred to as a fourth corner portion DA4. In FIG. 11, because the wafer D is a square, the incident light from the lighting devices CL1 to CL4 passes through the corner of the wafer D, but if it is rectangular, it does not pass through the corner. However, the first corner portion DA1, the second corner portion DA2, the third corner portion DA3, and the fourth corner portion DA4 are areas of a specific size, and incident light from the lighting devices CL1 to CL4 passes through the first corner portion DA1, the first The second corner portion DA2, the third corner portion DA3, and the fourth corner portion DA4.

As shown in FIG. 12, in order to perform the positioning or position inspection of the wafer D, the wafer identification lighting devices RL1 to RL4 that recognize the wafer D are arranged at positions facing the four sides of the wafer D, respectively. The horizontal direction of the illumination from the wafer identification illumination devices RL1 and RL3 arranged opposite to the side along the X-axis direction is the Y-axis direction, and from the wafer identification arranged opposite to the side along the Y-axis direction. The incident direction of the illumination in the horizontal direction of the lighting devices RL2 and RL4 is the X-axis direction.

The surface of the wafer that is not completely specularly reflected is unfortunately a bright field of view depending on the incident direction of the light. However, there are many wafer surface processing systems that are aligned in the X-axis and Y-axis directions. Direction, if the incident direction of the light is focused in an area that is not parallel or perpendicular to the X-axis direction and the Y-axis direction, no matter which angle the vertical incidence angle is determined at, the light will not be reflected on the wafer surface Direction to the optical axis of the camera. As a result, a dark field of view can be securely secured regardless of the surface state of the wafer.

＜ Modifications ＞
In the following, a few examples of representative modifications are exemplified. Regarding the description of the following modification examples, the parts having the same configuration and function as those described in the above-mentioned embodiment are denoted by the same reference numerals as those in the above-mentioned embodiment. Next, the descriptions of the relevant parts can be appropriately referred to the descriptions in the above embodiments to the extent that there is no technical contradiction. In addition, a part of the above-mentioned embodiment and all or a part of the plurality of modified examples are within a range where there is no technical contradiction, and can be suitably and compositely applied.

(Modification 1)
FIG. 13 is a schematic perspective view showing a lighting device according to Modification 1. FIG. FIG. 14 is a schematic perspective view showing a means for rotating the lighting device of FIG. 13. FIG. 15 is a schematic plan view showing an arrangement when the position recognition is performed by the lighting device of FIG. 13. FIG. 16 is a schematic plan view showing the arrangement of a wafer crack inspection using the lighting device of FIG. 3.

In the case of the embodiment, the illumination device for wafer crack inspection is arranged differently from the illumination device for wafer identification. As shown in FIG. 13, in modification 1, the wafer D is positioned or inspected (hereinafter, In the case of position identification.), The oblique illumination device (inclined light bar illumination device) of the strip type is arranged to face the four sides of the wafer D, and when the crack of the wafer D is inspected, oblique light The strip lighting device is rotated and arranged at four corners of the wafer D.

As shown in FIG. 14, the driving unit of the lighting device controlled by the control unit 8 includes a rotation ring 91 to which the oblique strip lighting devices BLD1 to BLD4 are mounted, a fixing ring 92 supporting the rotation ring 91, and a pillar supporting the fixing ring 92. 93, 94. The rotation ring 91 rotates the outside of the fixed ring 92 using a belt 96 driven by a motor 95. After this, the oblique light bar lighting devices BLD1 to BLD4 can be rotated in the horizontal direction.

As shown in FIG. 15, in the case of identifying the position of the wafer D, the illumination light from the oblique light bar lighting devices BLD1 and BLD3 is directed toward the center of the wafer D along the Y-axis direction. The irradiation light is directed toward the center of the wafer D along the X-axis direction.

As shown in FIG. 16, when the crack of the wafer D is inspected, the irradiation light from the oblique light bar lighting devices BLD1, BLD2, BLD3, and BLD4 is rotated 45 degrees from the X-axis direction to the Y-axis direction. Towards the center of wafer D.

In the case of inspecting the crack of the wafer D, the arrangement of the oblique light bar lighting device is arranged at a position rotated 45 degrees from the processing direction of the wafer. The angle of travel in the X-axis direction and the Y-axis direction may be sufficient.

(Modification 2)
A lighting device according to Modification 2 will be described with reference to FIGS. 17 to 19.

FIG. 17 is a schematic perspective view showing a lighting device according to a second modification. FIG. 18 is a schematic perspective view showing a means for controlling lighting and turning off of the lighting device of FIG. 17. FIG. 19 is a schematic plan view illustrating the lighting and turning-off positions of the lighting device of FIG. 17.

In the case of the embodiment and the modification 1, the oblique light bar lighting device is used, but in the modification 2, as shown in FIG. 17, a ring-type oblique lighting device (oblique light ring lighting device) RLD is used to The areas R1 to R4 are turned on and off, and the positions are identified and cracks are checked. The oblique halo lighting device turns off the irradiation from the X-axis direction and the Y-axis direction to the processing direction of the wafer during the crack inspection.

As shown in FIG. 18, the control unit of the lighting device controlled by the control unit 8 includes a first power control compartment 97_1 that controls lighting / off of the areas R1 to R4 of the oblique halo lighting device RLD, and is connected to the oblique halo lighting device RLD. The power supply cable 98_1 of the area R1 to R4 and the first power control compartment 97_1, the second power control compartment 97_2 that controls the lighting / off of the oblique halo lighting device RLD, and the oblique halo lighting device RLD The power cables 98_2 of the areas R5 to R8 and the second power control compartment 97_2.

As shown in FIG. 19, when the position of the wafer D is identified, all the areas R1 to R8 of the oblique halo lighting device RLD are turned on, and the irradiation light is directed toward the wafer D. Thereby, there is irradiation light from the oblique halo lighting device RLD toward the center of the wafer D in the X-axis direction and the Y-axis direction.

In the case of inspecting the crack of the wafer D, the areas R1 to R4 of the oblique halo lighting device RLD are turned off, the areas R5 to R8 are turned on, and the irradiation light from the areas R5 to R8 is directed to the wafer D. The areas R1 to R4 are areas that intersect the X-axis direction or the Y-axis direction, and are respectively 1/8 of the size of the entire oblique halo lighting device RLD. The areas R5 to R8 are areas that intersect the middle direction of the X-axis direction and the Y-axis direction, and are areas of the size of 1/8 of the entire oblique halo lighting device RLD. As a result, the illumination light from the oblique halo lighting device RLD is rotated from the X-axis direction to the Y-axis direction by 45 degrees toward the center of the wafer D, and there is no X-axis and Y-axis from the oblique halo lighting device RLD. The direction irradiates light toward the center of the wafer D.

In the present modification, the fields R1 to R4 are respectively shown as a field having a size of 1/8 of the entire oblique halo lighting device RLD. However, the fields R1 to R4 are not limited to 1/8. In the case, the areas R1 to R4 are set to be larger than 1/8, and the areas R5 to R8 are set to be smaller than 1/8. It is also possible to irradiate with a narrower area.

The appearance inspection of the crack is performed at least one of the wafer supply location, the intermediate stage, and the bonding stage where the wafer position is identified, and it is more preferable to perform the inspection at all places. If it is performed in the wafer supply section, cracks can be checked early. If it is performed on the intermediate stage, cracks that cannot be detected in the wafer supply unit or cracks that occur after the picking process (compared to the bonding process, which have not been noticeable before) can be detected before bonding. of. In addition, when performed at the bonding stage, cracks that cannot be detected in the wafer supply section and the intermediate stage (compared to the bonding process, which have not been noticeable before) or cracks that occur after the bonding process are possible. It is detected before the bonding of the next wafer is stacked, or before the substrate is ejected.

The inventions invented by the inventors have been specifically described above based on the embodiments and modifications, but the invention is not limited to the above embodiments and modifications, and various changes can be made. It is unnecessary to repeat them here. of.

For example, although the oblique light bar illuminating device was rotated in the modification 1, it is not limited to this, and a wafer may be rotated. For example, the intermediate stage on which the wafer is placed may be rotated to change the irradiation direction.
Moreover, in the embodiment, the wafer appearance inspection identification is performed after the wafer location identification, but the wafer location identification may be performed after the wafer appearance inspection identification.
Furthermore, in the embodiment, the DAF is attached to the back surface of the wafer. However, the DAF may not be used.
In the embodiment, one pickup head and one coupling head are provided, but two or more pickup heads may be provided. Furthermore, although the intermediate stage is provided in the embodiment, the intermediate stage may be omitted. In this case, the pickup head and the bonding head can be used in combination.
Moreover, in the embodiment, the surface of the crystal element is used as the upper surface for bonding. However, it is also possible to make the surface of the crystal element after the surface of the crystal element is reversed and picked up, and the surface of the crystal element is used as the upper surface for bonding. In this case, it is not necessary to provide an intermediate stage. This device is a so-called flip-chip bonding machine.
In addition, although the coupling head is provided in the embodiment, the coupling head may not be used. In this case, the wafer that has been picked up is placed in a container or the like. This device is called a pickup device.

10‧‧‧ Die Bonder

1‧‧‧Epistar Supply Department

13‧‧‧Top unit

2‧‧‧Pick up department

24‧‧‧ Wafer Identification Camera

3‧‧‧ alignment

31‧‧‧ intermediate stage

32‧‧‧ Carrier Identification Camera

4‧‧‧ junction

41‧‧‧Combination head

42‧‧‧ Collets

44‧‧‧ substrate identification camera

5‧‧‧Transportation Department

51‧‧‧ substrate handling claw

8‧‧‧Control Department

9‧‧‧ substrate

BS‧‧‧Combination station

D‧‧‧Epistar

P‧‧‧Packing area

CL1, CL2, CL3, CL4 ‧‧‧ crack detection lighting device

RL1, RL2, RL3, RL4 ‧‧‧Epistar identification device

BLD1, BLD2, BLD3, BLD4‧‧‧ oblique light bar lighting device

RLD‧‧‧ oblique halo lighting device

[Fig. 1] A schematic plan view showing a configuration example of a die bonder.

[FIG. 2] A diagram illustrating a schematic configuration when viewed from the direction of an arrow A in FIG. 1. [FIG.

[Fig. 3] Fig. 3 is an external perspective view showing a structure of a wafer supply unit of Fig. 1.

4 is a schematic cross-sectional view showing a main part of a wafer supply unit of FIG. 2

5 is a block diagram showing a schematic configuration of a control system of the die bonder of FIG. 1

[FIG. 6] A flowchart illustrating a die bonding process in the die bonder of FIG. 1. [FIG.

[Fig. 7] Schematic diagram explaining the angle of incidence of oblique illumination

[Fig. 8] Schematic diagram showing the reflected light caused by the obliquely illuminated wafer or wafer in Fig. 8

[Fig. 9] Fig. 9 is a schematic diagram illustrating the brightness and darkness of a wafer caused by the angle of incidence of oblique illumination.

[Fig. 10] An enlarged view of a wafer surface

[FIG. 11] A plan view showing the arrangement of a lighting device for wafer crack inspection.

[Fig. 12] A layout diagram showing the arrangement of a lighting device for wafer crack inspection and a lighting device for wafer identification.

13 is a schematic perspective view showing a lighting device according to Modification 1.

14 is a schematic perspective view showing a means for rotating the lighting device of FIG. 13

FIG. 15 is a schematic plan view showing a configuration in a case where position recognition is performed using the lighting device of FIG. 13

16 is a schematic plan view showing the arrangement of a wafer crack inspection using the lighting device of FIG. 13

17 is a schematic perspective view showing a lighting device according to a modification 2.

FIG. 18 is a schematic perspective view showing a means for controlling lighting and turning off of the lighting device of FIG. 17

[FIG. 19] A schematic plan view illustrating the lighting and turning-off positions of the lighting device of FIG. 17. [FIG.

Claims (13)

A semiconductor manufacturing apparatus including: An imaging device for photographing a wafer having a first side, a second side connected to the first side, a third side opposite to the first side, and a fourth side opposite to the second side; An illuminating device that illuminates the wafer from a position inclined with respect to the optical system axis of the imaging device; and A control device for controlling the aforementioned imaging device and the aforementioned lighting device; The aforementioned control device is Suppressing from a first direction from the center of the first side to the center of the wafer, a second direction from the center of the second side to the center of the wafer, The third direction of the center and the fourth direction of illumination from the center of the fourth side toward the center of the wafer; A fifth direction from a first corner portion including an angle formed by the first side and the fourth side toward the center of the wafer is performed, and an angle formed from the second side including the first side and the first side is included. A second corner portion facing a sixth direction of the center of the wafer, a third corner portion including an angle formed by the third side and the second side toward a seventh direction of the center of the wafer, and Including illumination in an eighth direction of a fourth corner portion of the corner formed by the fourth side and the third side toward the center of the wafer; The wafer is captured by the imaging device. The semiconductor manufacturing apparatus according to claim 1, wherein: The aforementioned control device is When the position of the wafer is identified, the illumination device is used to illuminate the wafer from the first direction, the second direction, the third direction, and the fourth direction, and the wafer is captured by the imaging device; When inspecting cracks in the wafer, the illumination device is used to suppress illumination from the first direction, the second direction, the third direction, and the fourth direction from the fifth direction to the sixth direction. The seventh direction and the eighth direction are illuminated, and the wafer is captured by the imaging device. The semiconductor manufacturing apparatus according to claim 2, wherein: The lighting device includes: A first crystal element identification lighting device arranged at a position opposite to the first side; A second wafer identification lighting device arranged at a position opposite to the second side; A third crystal element identification lighting device arranged at a position opposite to the third side; A fourth crystal element identification lighting device arranged at a position opposite to the fourth side; A first wafer crack inspection lighting device arranged at a position opposite to the first corner portion; A second wafer crack inspection lighting device arranged at a position opposite to the second corner portion; A third wafer crack inspection lighting device arranged at a position facing the third corner portion; and A fourth wafer crack inspection lighting device arranged at a position opposite to the fourth corner portion; The aforementioned control device is When the position of the crystal element is identified, the first crystal element identification lighting device is used to illuminate from the first direction, the second crystal element identification lighting device is used to illuminate from the second direction, and the first The illumination device for three-crystal element recognition illuminates from the third direction, the illumination device for four-crystal element recognition illuminates from the fourth direction, and the wafer is photographed with the imaging device; When inspecting the crack of the wafer, the first wafer crack inspection lighting device is used to illuminate from the fifth direction, and the second wafer crack inspection lighting device is used to illuminate from the sixth direction. The third wafer crack inspection lighting device illuminates from the seventh direction, the fourth wafer crack inspection lighting device illuminates from the eighth direction, and the wafer is captured by the imaging device. The semiconductor manufacturing apparatus according to claim 2, wherein: The lighting device includes: A first oblique light bar lighting device; A second oblique light bar lighting device; A third oblique light bar lighting device arranged opposite to the first oblique light bar lighting device; and A fourth oblique light bar lighting device arranged opposite to the second oblique light bar lighting device; The aforementioned control device is In the case of identifying the position of the aforementioned wafer, The first oblique light bar lighting device is used to illuminate from the first direction, the second oblique light bar lighting device is used to illuminate from the second direction, the third oblique light bar lighting device is used to illuminate from the third direction, and the aforementioned A fourth oblique light bar illuminating device illuminates from the fourth direction, and photographs the wafer with the imaging device; In the case of checking the cracks of the aforementioned wafer, The first oblique light bar lighting device is used to illuminate from the fifth direction, the second oblique light bar lighting device is used to illuminate from the sixth direction, and the third oblique light bar illuminator is used to illuminate from the seventh direction. The fourth oblique light bar illuminating device illuminates from the eighth direction, and photographs the wafer with the imaging device. The semiconductor manufacturing apparatus according to claim 2, wherein: The aforementioned lighting device is an oblique halo lighting device having the first field, the second field, the third field, the fourth field, the fifth field, the sixth field, the seventh field, and the eighth field; The aforementioned control device is In the case of identifying the position of the aforementioned wafer, Lighting the first field, the second field, the third field, the fourth field, the fifth field, the sixth field, the seventh field, and the eighth field, Lighting in the first area from the first direction, lighting in the second area from the second direction, lighting in the third area from the third direction, and lighting in the fourth area from the fourth direction. Lighting is performed from the fifth direction in the fifth area, from the sixth direction in the sixth area, from the seventh direction in the seventh area, and from the eighth area in the eighth area. Illuminate in the direction, and shoot the wafer with the camera; In the case of checking the cracks of the aforementioned wafer, Turn off the first field, the second field, the third field, and the fourth field, and turn on the fifth field, the sixth field, the seventh field, and the eighth field, Lighting is performed from the sixth direction in the sixth field, lighting is performed from the seventh direction in the seventh field, lighting is performed from the eighth direction in the eighth field, and the wafer is captured by the imaging device. The semiconductor manufacturing apparatus according to claim 1, further comprising: A wafer supply unit is provided, the wafer supply unit includes a wafer ring supporter, and the wafer ring supporter holds a dicing tape to which the wafer is attached; The control device is configured to use the imaging device and the illumination device to photograph a wafer attached to the cutting tape. The semiconductor manufacturing apparatus according to claim 1, further comprising: With a bonding head, the bonding head couples the aforementioned crystal element to a substrate or an already bonded crystal element; The aforementioned control device uses the aforementioned imaging device and the aforementioned illumination device to photograph a wafer that has been bonded to the substrate or the wafer. The semiconductor manufacturing apparatus according to claim 1, further comprising: have: A pick-up head that picks up the aforementioned wafer; and An intermediate stage on which the previously picked wafers are placed; The control device uses the imaging device and the illumination device to photograph a wafer that has been mounted on the intermediate stage. A method for manufacturing a semiconductor device includes the following steps: (a) a process for preparing a semiconductor manufacturing apparatus according to any one of claims 1 to 5; (b) the process of carrying in the wafer ring holder holding the dicing tape attached with the wafer; (c) the process of moving into the substrate; (d) a process of picking up the aforementioned wafer; (e) A step of bonding the picked up wafer to the substrate or the wafer to which the wafer has been bonded. The method for manufacturing a semiconductor device according to claim 9, wherein: The step (d) is to place the wafers that have been picked up on an intermediate stage; The step (e) is to pick up a wafer that has been placed on the intermediate stage. The method for manufacturing a semiconductor device according to claim 9, further comprising: (G) A step of inspecting the appearance of the wafer using the imaging device and the lighting device before the step (d). The method for manufacturing a semiconductor device according to claim 9, further comprising: (H) A step of inspecting the appearance of the wafer using the imaging device and the illumination device after the step (e). The method for manufacturing a semiconductor device according to claim 10, further, (I) A step of, after the step (d) and before the step (e), using the imaging device and the illumination device to inspect the appearance of the wafer.